CN1140389A - 电子电路的制造方法 - Google Patents
电子电路的制造方法 Download PDFInfo
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- CN1140389A CN1140389A CN96100295A CN96100295A CN1140389A CN 1140389 A CN1140389 A CN 1140389A CN 96100295 A CN96100295 A CN 96100295A CN 96100295 A CN96100295 A CN 96100295A CN 1140389 A CN1140389 A CN 1140389A
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Abstract
提供一种应用金属表面处理方法,不使用助焊剂就可进行焊接的电子电路的制造方法。上述金属表面处理方法不必使用复杂的工艺就可以简单且不给电子装置或电路基板带来不利影响地除去金属表面的氧化膜或有机物、炭等等。在用焊料连接电子装置和电路基板之际,先向焊料上照射激光以净化焊料,然后把电子装置进行位置对准并装配到上述电路基板上,再在低氧浓度气氛中加热熔融焊料把电子装置和电路基板连起来。
Description
本发明涉及把半导体集成电路(LSI)等的电子装置或部件与电路基板连起来的电子电路的制造方法,特别是涉及不使用助焊剂而用锡焊进行连接的电子电路的制造方法。
在焊接电路基板和半导体集成电路(LSI)等的时候,历来要求被焊对象金属的表面保持清洁且不允许有碍浸润性之类的物质存在。
另外,在进行镀覆之际,也必须保持清洁、使被镀对象金属的表面上不存在氧化膜。
还有,在把Au丝或Au带有超声波热压焊法压焊到对象金属的表面上去的时候,由于对象金属表面上的氧化膜会成为问题,故对象金属的表面必须保持清洁。
在这样的有碍焊锡的浸润性的物质中有氧化物、氯化物、硫化物、炭酸盐和各种有机化合物等等。特别是在锡焊、镀覆、Au丝或Au带等的超声波热压焊等的处理工艺中的最大妨害是在焊锡、镍(Ni),镍合金(Ni与其他物质的合金)等对象金属的表面上所存在的氧化膜。
这种氧化膜,一般说可借助于助焊剂使之进行化学性溶解而变成液体的化合物。这样一来,对象金属的表面和焊锡的金属原子就得到了因形成了共有外壳的电子壳的金属键状态而直接冲撞的机会,对象金属与焊锡的合金化就有了可能。但是,由于表面上残存有助焊剂的残渣,故必须将之洗干净。
此外,对于镀覆来说,如果中间介以氧化膜就不可能镀覆。比如,作为镀的代表性例子有电镀,但氧化膜将形成绝缘膜,形不成电镀所必须的电气通导,故镀覆是不可能的。
此外,对于置换镀覆,仍然是氧化膜会形成妨害,使对象金属的表面与镀液之间的置换反应丧失,使镀覆变成为不可能。
关于这些镀覆,也需要用盐酸等处理液除去氧化膜,但由于也会剩下残渣,变成为使接合的可靠性下降的主要因素。所以历来实施用氟立昂等进行的清洗。
对此,在最近进行了通过采用把微量的所剩残渣少的松香亭(abiefin)酸(松香:rosin)和己二酸(adipin)用作助焊剂的办法而不需要清洗的技术,但在接合的可靠性这一点上还不完善。
关于这种技术,在“铝钎科技术杂志(AL-mit technicalJourna(19“(1992年)”和关于用于无清洗化的助焊剂的作用机构和存在的问题”((株)日本工业技术开发研究所、洼器规)中有详细的说明。
另一方面,对于金属材料、钢材、炭化物物等等人们提出了借助于照射激光光束可以得到具有超微细均一组织或非晶质构造、且具有优秀的耐蚀性、耐磨损性的材料的分品法(grad-ing法)。这种分品法可以在加工曝露于高温高压之下的金属材料,比如说汽车叶轮机所用材料时使用,比如在“续激光加工(小林昭著、PP164,开发社发行)中就有论述。
此外,作为不使用助焊剂或盐酸等的金属表面的氧化膜涂去方法,有用氩溅射器除去氧化膜的方法。
此外,如特开昭63-97382号公报所公开的那样,有在金属部件的喷砂加工形成在粗糙面上的表面上镀以合金属元素之后,在其上边照射激光以熔融处理镀层,以此来形成无针孔的紧密粘接性高的被覆膜的技术。
再有,如特开昭62-256961号公报所公开的那样,有在由铝或其合金所形成基体材料的表面上,通过采用形成阳极氧化被膜的办法,形成耐蚀性良好且易于焊接的表面处理层的技术。
本发明对上述现有技术进行研讨的结果,发现了以下几个问题
(1)在焊接电路基板和集成电路之时,若在其焊接之前,使用助焊剂除去氧化膜的方法,则存在着一定要有清洗助焊剂残渣的工艺的问题。此外还存在着作为残渣而残存下来的酸等将成为金属腐蚀的原因的问题。
此外还有在清洗之后一定要有干燥工艺的问题。
(2)如果使用氩溅射器除去氧化膜的方法,则因为要在真空中进行处理、故除去设备管理困难之外,还存在着氩溅射器将给电子装置或电子装置的有源器件带来不良影响的问题。
(3)如果使用激光光束的分品法和特开昭63-97382号公报所公开了的激光加工处理方法,则由于不论是哪一种方法,都是用高能激光而强制性地使表面的金属组织熔融变化而得到金属表面的耐磨损性和致密性,故存在着在金属表面固化的过程中生成了氧化膜的问题。
此外,公布于特开昭62-256961号公报中公开的表面处理方法,不是除去氧化膜的技术,不可能使用那种方法。
本发明的目的是提供一种电子电路的制造方法,这种方法可以解决上边说过的现有技术的那些问题,适用不需使用复杂的工艺就可以简单地,而且不给电子装置,部件或电路其板带来不利影响地除去金属表面的氧化膜和有机物、炭等的金属表面处理方法、不使用助焊剂就可以焊接。
倘采用本发明,则通过采用在把电子装置或部件与电路基板用焊料连接起来之际、向焊料上照射激光使焊料清洁化,再把电子装置进行位置对准之后装到上述电路基板上去,并在低氧浓度的气氛中使焊料加热熔融之后,把电子装置与电路基板连接起来的办法达到上述目的。
在上述方法中,对于焊料等的金属表面、用比使金属表面的组织产生变化的能量小的能量的激光进行照射。这样,由于表面的金属组织不熔融、用激光的能量仅仅解除了表面的金属原子与氧原子之间的结合、因而除掉了金属表面的氧化膜、同时还可除去金属表面的有机物和炭等等。
此外,上述照射激光的气氛、不论是在大气中、真空中、He气中都没问题地可以除去金属表面氧化膜。
其次,在用临时固定液把要用焊料连接的电子装置或部件和电路基板进行了位置对准之后,在低氧浓度气氛中对已经除掉上述氧化膜的焊料加热熔融以进行焊接。这样一来,就可以进行良好的焊接而不会使焊接面氧化。
图1是用于说明本发明的金属表面处理方法的实施例1的断面图。
图2是用于说明本实施例1的变形例的断面图,在这里代替示于图1的焊锡层,向半导体集成电路(LSI)等的焊锡点的表面上,介以透镜和镜子照射激光。
图3是向本实施例1的焊锡层表面上照射激光之前的扫描电镜曝光。
图4是图3的扩大照片。图5是本实施例1的焊锡层表面的激光照射之后的扫描电镜照片。
图6是图5的放大照片。
图7的曲线图绘出的是把Sn-Pb表面的氧化膜量(%)取为纵轴。把脉冲式激光照射能量密度(J/cm2)取为横轴的本实施例1中两者之间的关系。
图8的曲线,绘出的是把Sn-Pb表面的氧化膜量(%)取为纵轴,并使能量密度保持为恒定值1.5(J/cm2)取为横轴时本实施例1中的照射次数。
图9的断面图示出了用本实施例1焊接的电子电路的一个例子。
图10的断面图示出了用本实施例1焊接的电子电路的另一个例子。
图11的断面图用于说明本发明的金属表面处理方法的实施例2。
图12的曲线绘出了把本实施例2中的对镍层的同一部分的激光照射次数取为恒定的条件下,把形成于镍上的氧化的厚度(单位:nm)取为纵轴、把激光照射能量密度(J/cm2)取为横轴时两者的关系。
图13的曲线绘出了把本实施例2中的激光照射能量密度取为恒定、把形成于镍层表面上的氧化的厚度(单位:nm)取为纵轴,把对上述镍层的同一部分照射的激光照射次数取为横轴时,两者的关系。
图14的断面图用于说明本发明的电子装置的制造方法的实施例3。
图15是在本实施例3中具体地采用了再氧化防止方法的电子装置的构成断面图。
图16是一个不用示于图15的输入输出(I/O)管脚而是直接钎料或者焊料,把电子装置和陶瓷基板上的镍(Ni)层或者镍合金层电连起来的例子。
图17A和图17B用于说明本发明的电子电路的制造方法的实施例4。
图18的断面图示出了应用本发明的一个实施例的制造装置把要进行焊接的电子装置临时固定好了的电路基板的构成。
图19的斜视图示出了本发明的一个实施例的电子电路的制造装置的构成。
图20的断面图示出了处理容器的内部的状态。
图21用于说明在电子装置的临时固定中所使用的液体的例子。
以下利用附图详细地说明本发明的实施例。
实施例1
图1是用于说明本发明的金属表面处理方法的实施例1的断面图,图中1是陶瓷基板,2是金属化层、3a是焊锡层、4是氧化膜、5是激光、6是透镜、7是镜子。
如图1所示,本实施例1的金属表面处理方法是一种把在形成于陶瓷基板1的上层上的金属化层2的表面的焊锡层3a的表面上生长的氧化物4(或者有机物、炭等的残渣)除去的方法。
上述金属化层2,例如,由钛(Ti)膜,镍(Ni)膜、镍合金膜等构成。
为除去焊锡层3a的表面氧化物4(或者有机物、炭等的残渣),要对上述焊锡层3a的表面介以透镜6和镜子7照射激光5,以除去氧化物4。
图2是本实施例1的变形例,它不向图1的焊锡层3a上照射激光,而代之以向半导体集成电路(LSI)等中的焊锡点3b的表面上通过透镜6和镜子7照射激光5。
在本实施例1中所使用的激光5是一种其能量比使焊锡层3a或者焊锡点3b的金属组织发生变化的能量小的激光。详细地讲就是这种激光的能量比焊锡层3a、焊锡点3b的表面的Sn原子与O原子之间的结合能大,比Sn-Pb原子彼此间的结合能小。
当把激光5照射到焊锡层3a、焊锡点3b上的时候,表面的焊锡不熔融,仅仅是表面的Sn-Pb原子和O原子之间的结合被激光5的能量拆开。这样,就除去了焊锡层3a、焊锡点3b的表面的氧化膜4。另外,与此同时也除去了金属表面的有机物和炭等等。
在这种情况下,由于照射激光5的主要目的是拆开表面的Sn-Pb原子与O原子之间的结合,故激光5,比如说,理想的是脉宽1μs以下的脉冲激光。
此外,由于用脉宽1μs以下的脉冲激光来拆开表面的Sn-Pb原子与O原子的结合键,故作为激光、理想的是比如说是波长短(光子能量高)的受激准分子激光。
另外,照射激光5的气氛无论是在大气中,真空中,或在He气中都可以,因此,可以除去焊锡层3a、焊锡点3b的表面的氧化膜4而没什么问题。
图3是用扫描电镜观察到的激光照射之前的焊锡层3a的表面状态的照片,图4是其放大照片。从这些照片可以确认在焊锡层3a的表面上有有机物或炭等等的黑色残渣。
图5是在激光照射后,同样地用扫描电镜观察到的焊锡层3a的表面状态的照片,图6是放大照片。
从这些图中可以确认其有机物与炭之类的残渣已完全除去。
图7是纵轴为Sn-Pb表面的氧化膜量(%),横轴为1个脉冲的激光照射能密度(J/cm2)(每单位面积的激光照射能量)的两者关系的曲线图。
从图7可知,在激光照射能密度为0.5J/cm2~4.0J/cm2的范围内,残留氧化膜量比未处理的氧化膜量减少了,其中,激光照射能量密度为1.5J/cm2时,残留氧化膜量变得最小。
这时的氧化膜量,是用能量分散X射线分光法(EDX)测定的氧浓度。
图8是激光照射次数的曲线图,纵轴是Sn-Pb表面的氧化膜量(%)、横轴是把激光照射能量密度保持为1.5J/cm2的恒定值。
从图8可知,在照射次数为6次-10次的范围内,残留氧化膜量变少,特别是在照射次数为8次时该值最小。
从以上可知,Sn-Pb表面的氧化量在激光照射能量密度为1.5J/cm2且照射次数为8次时将减至最小,从而提高了焊锡层3a或焊锡点3b的浸润性。
图9示出了应用本实施例1的金属表面处理方法进行焊锡点3b的表面的氧化膜清除,并在无助焊剂的状态下,把集成电路(LSI)8焊接到形成了陶瓷基板1上的金属化层2上去的电子电路的关键部分的断面图。而图10是同样地除去封闭管帽9的部分的焊锡点3b的表面的氧化膜、并在无助焊剂的状态下实施焊接的电子电路的关键部分的断面图。
实施例2
图11是用于说明本发明的金属表面处理方法的实施例2的断面图。
本实施例2的金属表面处理方法,如图11所示,是一种除去在陶瓷基板1的上层形成的镍(Ni)层(或者镍合金层)2a的表面的氧化物4(或有机物、炭等的残渣)的方法。
镍(Ni)层(或镍合金层)2a由于一般易于氧化,故在镍(Ni)层或镍合金层2a的表面上简单地形成了氧化膜4。
除去镍层2a的表面的氧化物4的方法和上述实施例1一样,对镍层2a的表面介以透镜6和镜子7照射激光5。
图12的曲线图作为一个例子,在保持对镍层2a的同一部分激光5的照射次数固定为10次这一恒定值的情况下,纵轴取为在镍层2a上形成的氧化膜4的厚度(单位:nm),横轴取为激光照射能量密度(J/cm2)(单位面积的激光能量)、示出了两者的关系。
由图12可知,随着激光5的照射能量密度变大可以除去氧化膜。而且,即便是初始氧化膜的厚度变了,也可同样地除去氧化膜4。
图13的曲线图作为一个例子,画出了在把激光5的照射能量密度保持为0.75(J/cm2)这一恒定值的情况下,纵轴取为在镍层2a的表面上形成的氧化膜4的厚度(单位:nm),横轴取为对镍层2a的同一部分的激光照射次数时的两者的关系。
由图13可知,照射次数越多,氧化膜的厚度就越减小。
实施例3
图14是用于说明本发明的半导体集成电路(LSI)等电子装置的制造方法的实施例3的断面图。
在本实施例3中,如图14所示,在把已形成于陶瓷基板1的上层上的镍(Ni)层(或镍合金层)2a的表面氧化物(或有机物、炭等的残渣)用实施例1或实施例2的金属表面处理方法除去之后,镀以镀层10。
镀覆虽然也可以用电镀、无电场度、置换镀中的任何一个,但镀材一般用金(Au)以防再度氧化。
这样,就可以除去金属化层的镍层或镍合金层2a上的氧化膜并可防止其再度氧化。
在图15中,画出了具体地采用了本实施例3的防止再度氧化方法的电子装置的构成断面图。
本实施例3的制造方法,如图15所示,是在陶瓷基板1上形成金属化层的镍(Ni)层(或镍合金层)2a,再在其上边形成有机系绝缘级层15。在此有机系绝缘层15上开孔使上述镍(Ni)层2a露出来,在把已露了出来的镍(Ni)层2a的表面的氧化物用上述实施例1或实施例2的表面处理方法除去之后,镀以防止再度氧化的镀层10。接着,就可以用钎料(或焊料)11焊接输入输出(I/O)管脚12。
在除去了镍合金层2a的表面的氧化物4之后,通过镀以用于防止再度氧化的镀层10,半导体集成电路(LSI)等的输入输出(I/O)管脚12与陶瓷基板1之间的电连就可以变为良好。
此外,在用激光5除去了氧化膜4之后,在约过了一周之后,则即便是不镀用于防止再度氧化的镀层10(镀金),也可以电性良好的状态用钎料(或焊料)11把输入输出(I/O)管脚12与陶瓷基板1上的镍(Ni)层2a连接起来。
图16示出了不用示于图15的输入输出(I/O)管脚12,用钎料(或焊料)11直接把电子装置与陶瓷基板1上的镍(Ni)层2a电连起来的情况。
在这样的情况下,虽然现有技术必须用助焊剂进行连接,但在本实施例3的方法中,不需要助焊剂。
实施例4
图17A和图17B是用于说明本发明的半导体集成电路等电子装置的制造方法的实施例4的图,图17A是平面图、图17B是图17A的A-A线剖开的断面图。
如图17A、17B所示,本实施例4的制造方法是先在有机系绝缘层15的上层上形成与有机系绝缘层15紧密粘接性好的金属膜13(例如铬(Cr)、钛(Ti)),再在其上边形成镍(Ni)层(或镍合金层)2a。在用上述实施例1或实施例2的表面处理方法除去了该镍(Ni)层(或镍合金层)2a的表面的氧化物(或有机物、炭等的残渣)之后,用超声波热压方式把金带或金丝14压焊上去。
通常由于表面的氧化膜的缘故。在镍(Ni)层或者镍合金层2a上这种压焊是困难的,但用上述实施例1或实施例2的方法除去氧化物,则可以良好地压焊。
另外,在上述实施例中,假定表面处理的对象金属为焊锡层3a镍(Ni)层2a,但本发明不受限于此,可以应用于需要除去氧化物或有机物等的各种金属。
不用说在这种情况下因金属材质的不同要适当地调节激光的能量。
此外,以脉冲激光为例进行了说明,但如果加上控制方法使金属组织本身不熔融的话,则即使是用CO激光器等长波长的激光连续进行照射也可获得同样的效果。
还有,有时也会因用激光照射而使表面的金属组织熔融掉,但如果时间短就不要紧。
实施例5
图18的断面图示出了用本发明的一个实施例的制造装置把要进行焊接的电子装置临时固定上的电路基板的构成。图19的斜视图示出了本发明的一个实施例的电子电路的制造装置的构成。图20的断面图示出了处理容器的内部构造。图21的说明图说明了电子装置的临时固定中所使用的液体的例子。
在图18-图20中,示出了电子装置21,临时固定电子装置21的液体22、焊接面23、电路基板24、焊料25、处理容器26、压力控制部分27、氧浓度监测部分28、温度控制部分29、电子电路基板搬运部分30、控制部分31、被处理电子电路基板32、炭膜电阻加热器33、冷却板34、气体导入系统35和真空排气系统36。
由用本发明的一个实施例进行焊接的电子装置和电路基板组成的被处理电子电路基板32如图18所示,设有用焊料25制成的焊锡点端子的LSI等的电子装置21,在用陶瓷、玻璃树脂等形成的电路基板24上边被构成为用临时固定液体22把电子装置21临时固定起来。这时,要进行位置对准,使将被焊接的电路基板24上所设置的焊接面23与电子装置的焊料25之间的位置对准。
对如上所述把电子装置21临时固定到电路基板24上的被处理电子电路基板32进行处理,并把设于电子装置21上的焊料25和设于电路基板24上的焊接面23焊接起来的本发明的一个实施例的电子电路的制造装置,如图19所示,由对示于图18的被处理电子电路基板32进行加热、冷却之类的处理并进行焊接的处理容器26、用于控制液体22的蒸发速度的压力控制部分27、对形成于处理容器26的内部的低氧浓度气氛的氧浓度进行监测的氧浓度监测部分28、对被处理电子电路基板32加热的炭膜电阻加热器进行温度控制的温度控制部分29,用于自动处理一连串动作的电子电路基板搬运部分30和对整个装置的自动控制进行处理的控制器31构成。
而且,在处理容器26里边,如图20所示,配置有用于对被处理电子电路基板32进行加热的炭膜电阻加热器33、和把已被加热的炭膜电阻加热器33及被处理电子电路基板32进行冷却的金属制的水冷式冷却板34,而且被处理电子电路基板32被装到炭膜电阻加热器33上进行处理。
另外,在处理容器26上,连接有气体导入系统35和真空排气系统36,以控制处理容器26里边的处理气氛。
还有,用处理容器26,气体导入系统35、真空排气系统36和炭膜电阻加热器33的加热方法构成了回流加热装置。
其次,说明用本发明的一个实施例的电子电路的制造装置进行焊接的方法。
首先,用分配器(没有画出来)事先向电路基板24上供给已控制其量的液体22。该供给量被控制为覆盖上焊料25和焊接面23、而且,不会因液体22的表面张力等等使电子装置21往上抬。其次,使已事先供给焊料25的LSI等电子装置21和已涂上液体22的电路基板24上的焊接面23进行位置对准,把电子装置21装到电路基板24上边。
已装上电子装置21的电路基板24将变成如图18所示的那种被处理电子电路基板32,该被处理电子电路基板32被放到图19的制造装置的电子电路基板搬运部分30上。被放到电子电路基板搬运部分30上的被处理电子电路基板32、如图20所示,用机器手移往处理容器26中的碳膜电阻加热器33上。
其次,用由旋转泵等构成的真空排气系统36排出处理容器26里边的气体,并用可以调整流量、压力的气体导入系统35,导入已把He、N等的非氧化性气体,或者H和N进行了混合的还原性气体等等。使处理容器26的内部一次返回到大气压。这时,用氧浓度监测器部分28测定处理容器26内的氧浓度,并在氧浓度未下降到指定的浓度(理想的是10ppm以下)的时候,反复进行上述的真空排气和气体导入直到形成了指定的低氧浓度气氛为止。低氧浓度气氛具有防止加热中的被处理电子电路基板32中的电路基板24、电子装置21的焊接面、焊料25氧化的效果。
在处理器26内的低氧浓度气氛的形成结束后,在长时监测加热中是否有异常产生的同时,要用来自炭膜电阻加热器33的直接热传导加热被处理电子电路基板32。这种加热用温度控制部分29进行控制,温度被设定为此焊料25的熔点高。比如说,在焊料25的熔点为221℃的情况下,把炭膜电阻加热器33的温度设定为250℃。
加热开始后,为了所电子装置21临时固定到电路基板24上而使用的液体22就开始蒸发。在想促进或抑制这一蒸发的时候,可把形成上述低氧浓度气氛时的气体导入压力事先设定为比大气压低或者高。接下来,在焊料25熔融且焊接完毕之后,把冷却水供往金属制的水冷式冷却板34,冷却已被加热的碳膜电阻加热器33和被处理电子电路基板32,并用基板搬运部分30取出被处理电子电路基板32。
其次,具体地说明使用本发明的装置使被处理电子电路基板32中的液体22全部蒸发,略去焊接后的清洗工序,在电路基板24上焊接电子装置21的方法。
在本发明的一个实施例中,设作为所使用的焊料使用的是熔点221℃的焊料,且把炭膜电阻加热器33的温度设定为250℃。
此外,作为用于把电子21固定到电路基板24上的液体,比如说使用图21所示的那种不含松香的酒精系统的液体。
示于图21的液体A是一种乙二醇、其沸点为197℃,与所用焊料25的熔点221℃相比其沸点比较低。在使用这样的液体的时候,随着用炭膜电阻加热器33开始加热、被处理电子电路基板32的温度上升,液体开始蒸发。在本实施例中,由于用的是熔点为221℃的焊料且炭膜电阻加热器33的温度最大上升到250℃,故在焊接完毕之前液体就全部被蒸发了。在液体全部蒸发、焊料25完全熔融并进行完焊接的状态下,向冷却板34供给冷却水,以冷却已被加热了的炭膜电阻加热器33和被处理电子电路基板32,并用基板搬运部分30取出被处理电子电路基板32。
如上所述,用与所使用的焊料25的熔点相比为低沸点的液体临时把电子装置21固定到电路基板24上的情况下,由于在本实施例中,可以进行焊接而不会留下一点为了监时固定而使用的液体,故可以省去焊接后的清洗等等的工序。
另一方面,示于图21的液体B是三甘醇,其沸点是287℃、与所用焊料25的熔点221℃相比其沸点较高。在使用这种液体的情况下,即使用炭膜电阻加热器33开始加热,被处理电子电路基板32的温度上升,液体的蒸发迟缓,结果是焊接完毕时液体也不会完全蒸发而剩下来。
因而,为了解决这一问题,在焊接结束之后对处理容器26内进行真空排气以使其内部压力下降。这样,到用冷却板34冷却被处理电子电路基板32之前,能够使液体完全蒸发,与使用液体A时的情况相同,可以省去焊接后的清洗等等的工序。
上述液体A,B的蒸发控制,要这样进行:控制处理容器26内的压力并控制液体的蒸发速度,使得在进行焊接处理期间,临时固定电子装置的液体一直残存到焊锡熔融,而且,在用焊锡的熔融完成焊接时全蒸发掉。借助于焊锡熔融之前留有液体的办法,在某种程度的氧残存着的气氛中进行处理时,也可以防止焊接部分的氧化,从而得以进行可靠性更高的焊接。
如以上所说明的那样,倘采用本发明,则通过采用对焊料等的金属表面照射以其能量比使金属表面的组织产生变化的能量小的激光的办法,不使用助焊剂就可以除去金属表面的氧化膜。
此外,用特定的液体把电子装置和电路基板临时固定,并在低氧浓度气氛中加热熔融焊料,通过采用这种办法就可以防止加热中的电路基板,电子装置的焊接面和焊接的氧化,从而可进行可靠性高的焊接。
另外,采用本发明,则不再需要使用氟立昂等助焊剂清洗工艺,可以防止对地球环境的不利影响的同时,还可以谋求生产设备及生产工序数的削减。
Claims (20)
1.一种把电子装置配置于电路基板上并使已形成于上述电子装置或上述电路基板上的焊料加热熔融以把上述电子装置和上述电路基板连接起来的电子电路的制造方法,其特征为包括下述工序:
向上述焊料上照射激光的工序;
使上述电子装置对准上述电路基板上的所希望的位置并安装上去的工序;
在低氧浓度气氛中加热熔融上述焊料的工序;
把上述电子装置和上述电路基板连接起来的工序。
2.权利要求1所述的电子电路的制造方法,其特征为上述照射激光的工序中还包括:把上述激光的能量密度调整为比此使上述焊料熔融的能量密度小的能量密度的工序。
3.权利要求2所述的电子电路的制造方法,其特征为上述调整激光的能量密度的工序中还包括:
把上述激光的能量密度调整为0.5J/cm2到4.0J/cm2中任何一个值的工序。
4.权利要求3所述的电子电路的制造方法,其特征为上述照射激光的工序中还包括:
把上述激光照到上述焊料的一部分上并照射6-10次中的任何次数的工序。
5.权利要求1所述的电子电路的制造方法,其特征为把上述电装置装到上述电路基板上的工序中还包括:
把液体供给到上述电路基板上的工序;
使上述电子装置对准并装配到已供给上述液体的上述电路基板上所希望位置上去的工序。
6.权利要求5所述的电子电路的制造方法,其特征为还包括:上述液体是不含松香的酒精溶液。
7.权利要求5所述的电子电路的制造方法,其特征为,在上述处理容器中加热熔融上述焊料的工序中还包括:
控制上述处理容器内部的压力以控制上述液体的蒸发速度的工序。
8.权利要求1所述的电子电路的制造方法,其特征为在上述低氧浓度气氛中加热熔融焊料的工序中还包括:
把上述电路基板配置于处理容器内的工序;
在上述处理容器的内部形成指定浓度的低氧浓度气氛的工序;
在上述处理容器中加热熔融上述焊料的工序。
9.权利要求8所述的电子电路的制造方法,其特征为,在上述处理容器内部形成指定氧浓度的低氧浓度气氛的工序中还包括:
对上述处理容器内部进行真空排气的工序;
向上述处理容器内部导入气体的工序。
10.权利要求9所述的电子电路的制造方法,其特征为包括:
作为上述气体,导入非氧化性气体或还原性气体的工序。
11.权利要求1所述的电子电路的制造方法,其特征为包括:
把上述电子装置和上述电路基板连接上之后,冷却上述电路基板的工序。
12.一种先把部件配置到电路基板上,再在处理容器内加热熔融已形成于上述部件或上述电路基板上的焊锡点或焊锡层、把上述电子装置和上述电路基板连接起来的电子电路的制造方法,其特征为包括以下工序:
向上述焊锡点或焊锡层上照射激光的工序;
向上述电路基板供给不含松香的酒精溶液的工序;
把上述部件对准并装配到已供给上述液体的上述电路基板上所希望的位置上的工序;
把上述电路基板配置到处理容器内的工序;
在上述处理容器内部形成指定浓度的低氧浓度气氛的工序;
在上述处理容器中加热熔融焊锡点或焊锡层的工序;
把上述部件和上述电路基板连接起来的工序。
13.权利要求12所述的电子电路的制造方法,其特征为上述照射激光的工序中还包括:
把上述激光的能量密度调整为使其能量密度比使上述焊锡点或者焊锡层熔融的能量密度小的工序。
14.权利要求13所述的电子电路的制造方法,其特征为,上述激光的能量密度调整工序中还包括:
把上述激光的能量密度调整为0.5J/cm2~4.0J/cm2中的任何一个值的工序。
15.权利要求12所述的电子电路的制造方法,其特征为包括:
上述酒精溶液是乙醇或者三甘醇。
16.权利要求12所述的电子电路的制造方法,其特征为,在上述处理容器内部形成指定浓度的低氧浓度气氛的工序中还包括:
对上述处理容器内部进行真空排气的工序;
向上述处理容器内部导入非氧化性气体或者还原性气体的工序。
17.权利要求12所述的电子电路的制造方法,其特征为,在上述处理容器内加热熔融上述焊锡点或焊锡层的工序中还包括:
控制上述处理容器内部的压力以控制上述液体的蒸发速度的工序。
18.权利要求12所述的电子电路的制造方法,其特征为包括:
把上述部件与上述电路基板连起来之后,冷却上述电路基板的工序。
19.一种把在下表面上已形成多个焊锡点的LSI配置在电路基板上,再在处理容器中加热熔融上述LSI下表面上的焊锡点以把上述LSI和上述电路基板连起来的电子电路的制造方法,其特征为包括以下工序:
向上述焊锡点上照射已把能量密度调整为比使上述焊锡点熔融的能量密度小的能量密度的激光以净化焊锡点的工序;
向上述电路基板上供给不含松香的酒精溶液的工序;
把上述LSI对准并装载到已供给上述酒精溶液的上述电路基板上所希望的位置并进行临时固定的工序;
把上述电路基板配置于处理容器内的工序;
在上述处理容器内部形成指定浓度的低氧浓度气氛的工序;
在上述处理容器中加热熔融上述焊锡点的工序;
连接上述LSI和上述电路基板的工序;
冷却上述电路基板的工序。
20.权利要求19所述的电子电路的制造方法,其特征为,在上述处理容器中加热熔融上述焊锡点的工序中还包括:
控制上述处理容器内部的压力,以控制蒸发速度,使得在上述焊锡点已熔融时上述酒精溶液应全部蒸发。
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- 1996-05-15 US US08/647,672 patent/US5940728A/en not_active Expired - Lifetime
- 1996-05-17 CN CNB961002956A patent/CN1146308C/zh not_active Expired - Fee Related
- 1996-05-18 KR KR1019960016807A patent/KR960044001A/ko active Search and Examination
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- 1999-06-01 US US09/322,998 patent/US6133135A/en not_active Expired - Fee Related
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2000
- 2000-03-30 US US09/538,515 patent/US6161748A/en not_active Expired - Fee Related
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107511589A (zh) * | 2017-10-17 | 2017-12-26 | 深圳华创兆业科技股份有限公司 | 多轴激光铣槽机 |
CN114364157A (zh) * | 2021-12-23 | 2022-04-15 | 广东德赛矽镨技术有限公司 | 一种带双面焊接焊盘的pcb的贴片及封装方法 |
CN114364157B (zh) * | 2021-12-23 | 2023-11-10 | 广东德赛矽镨技术有限公司 | 一种带双面焊接焊盘的pcb的贴片及封装方法 |
Also Published As
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US6269998B1 (en) | 2001-08-07 |
JP3120695B2 (ja) | 2000-12-25 |
US20010039725A1 (en) | 2001-11-15 |
US5940728A (en) | 1999-08-17 |
KR960044001A (ko) | 1996-12-23 |
JPH08316624A (ja) | 1996-11-29 |
US6161748A (en) | 2000-12-19 |
US6133135A (en) | 2000-10-17 |
US6410881B2 (en) | 2002-06-25 |
CN1146308C (zh) | 2004-04-14 |
TW323429B (zh) | 1997-12-21 |
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