CN1684238A - 引线框以及制造该引线框的方法 - Google Patents
引线框以及制造该引线框的方法 Download PDFInfo
- Publication number
- CN1684238A CN1684238A CNA200410098317XA CN200410098317A CN1684238A CN 1684238 A CN1684238 A CN 1684238A CN A200410098317X A CNA200410098317X A CN A200410098317XA CN 200410098317 A CN200410098317 A CN 200410098317A CN 1684238 A CN1684238 A CN 1684238A
- Authority
- CN
- China
- Prior art keywords
- electrodeposited coating
- diffusion layer
- alloy
- layer
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48663—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/48664—Palladium (Pd) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/85464—Palladium (Pd) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12875—Platinum group metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12889—Au-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12903—Cu-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12903—Cu-base component
- Y10T428/1291—Next to Co-, Cu-, or Ni-base component
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electroplating Methods And Accessories (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040026204A KR101038491B1 (ko) | 2004-04-16 | 2004-04-16 | 리드프레임 및 그 제조 방법 |
KR26204/2004 | 2004-04-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1684238A true CN1684238A (zh) | 2005-10-19 |
CN100405564C CN100405564C (zh) | 2008-07-23 |
Family
ID=35096818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200410098317XA Active CN100405564C (zh) | 2004-04-16 | 2004-12-03 | 引线框以及制造该引线框的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7268021B2 (zh) |
JP (1) | JP2005311353A (zh) |
KR (1) | KR101038491B1 (zh) |
CN (1) | CN100405564C (zh) |
TW (1) | TWI347663B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105489506A (zh) * | 2016-01-12 | 2016-04-13 | 成都先进功率半导体股份有限公司 | 高焊线质量的芯片框架及其制造方法 |
TWI793530B (zh) * | 2020-02-26 | 2023-02-21 | 日商松田產業股份有限公司 | 鈀-鎳合金鍍膜及其製造方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101038491B1 (ko) * | 2004-04-16 | 2011-06-01 | 삼성테크윈 주식회사 | 리드프레임 및 그 제조 방법 |
USRE45924E1 (en) * | 2005-09-22 | 2016-03-15 | Enplas Corporation | Electric contact and socket for electrical part |
JP2012241260A (ja) * | 2011-05-23 | 2012-12-10 | Kanto Gakuin | 電解パラジウム−リン合金めっき液、めっき被膜及びめっき製品 |
KR101646094B1 (ko) * | 2011-12-12 | 2016-08-05 | 해성디에스 주식회사 | 리드 프레임 및 이를 이용하여 제조된 반도체 패키지 |
CN102747393B (zh) * | 2012-07-18 | 2016-04-06 | 环保化工科技有限公司 | 复合多层镍电镀层及其电镀方法 |
JP2015191748A (ja) * | 2014-03-28 | 2015-11-02 | エヌイーシー ショット コンポーネンツ株式会社 | ガラスハーメチックコネクタ |
JP6149786B2 (ja) * | 2014-04-11 | 2017-06-21 | 豊田合成株式会社 | 半導体装置および半導体装置の製造方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62145848A (ja) * | 1985-12-20 | 1987-06-29 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2543619B2 (ja) * | 1990-09-05 | 1996-10-16 | 新光電気工業株式会社 | 半導体装置用リ―ドフレ―ム |
US5614320A (en) * | 1991-07-17 | 1997-03-25 | Beane; Alan F. | Particles having engineered properties |
US5453293A (en) * | 1991-07-17 | 1995-09-26 | Beane; Alan F. | Methods of manufacturing coated particles having desired values of intrinsic properties and methods of applying the coated particles to objects |
JPH0714962A (ja) * | 1993-04-28 | 1995-01-17 | Mitsubishi Shindoh Co Ltd | リードフレーム材およびリードフレーム |
US5675177A (en) * | 1995-06-26 | 1997-10-07 | Lucent Technologies Inc. | Ultra-thin noble metal coatings for electronic packaging |
KR970067816A (ko) * | 1996-03-26 | 1997-10-13 | 이대원 | 집적회로용 리드프레임 및 그 제조방법 |
JPH09275182A (ja) * | 1996-04-02 | 1997-10-21 | Seiichi Serizawa | 半導体装置用リ−ドフレ−ム |
JPH1022433A (ja) * | 1996-07-08 | 1998-01-23 | Daido Steel Co Ltd | 耐食性に優れたFe─Cr合金系リードフレーム材およびその製造方法 |
JPH1022444A (ja) * | 1996-07-08 | 1998-01-23 | Daido Steel Co Ltd | 耐食性に優れたPdめっきFeーNi合金系リードフレーム材およびその製造方法 |
JPH1022429A (ja) * | 1996-07-08 | 1998-01-23 | Daido Steel Co Ltd | 打ち抜き性に優れたリードフレーム材およびその製造方法 |
JPH10163397A (ja) * | 1996-11-27 | 1998-06-19 | Mitsui High Tec Inc | 半導体装置用リードフレームの製造方法 |
JPH10261754A (ja) * | 1997-03-18 | 1998-09-29 | Daido Steel Co Ltd | 端子用素板とその製造方法 |
JPH1117089A (ja) * | 1997-06-23 | 1999-01-22 | Mitsui High Tec Inc | リードフレームの製造方法および半導体装置の製造方法 |
JPH11111909A (ja) * | 1997-10-07 | 1999-04-23 | Seiichi Serizawa | 半導体装置用リードフレーム |
JPH11186483A (ja) * | 1997-12-22 | 1999-07-09 | Seiichi Serizawa | 半導体装置用リードフレーム |
US6194777B1 (en) * | 1998-06-27 | 2001-02-27 | Texas Instruments Incorporated | Leadframes with selective palladium plating |
JP2000077593A (ja) * | 1998-08-27 | 2000-03-14 | Hitachi Cable Ltd | 半導体用リードフレーム |
WO2002023618A1 (fr) * | 2000-09-18 | 2002-03-21 | Nippon Steel Corporation | Fil de connexion de semi-conducteur et son procede de fabrication |
US20020192492A1 (en) * | 2001-05-11 | 2002-12-19 | Abys Joseph Anthony | Metal article coated with near-surface doped tin or tin alloy |
JP2002368168A (ja) * | 2001-06-13 | 2002-12-20 | Hitachi Ltd | 半導体装置用複合部材、それを用いた絶縁型半導体装置、又は非絶縁型半導体装置 |
KR100705950B1 (ko) * | 2001-12-21 | 2007-04-11 | 매그나칩 반도체 유한회사 | 반도체 소자의 금속 배선 형성 방법 |
KR100833934B1 (ko) * | 2002-01-24 | 2008-05-30 | 삼성테크윈 주식회사 | 다층도금 리드프레임 및 이 리드프레임의 제조방법 |
KR100998042B1 (ko) * | 2004-02-23 | 2010-12-03 | 삼성테크윈 주식회사 | 리드 프레임 및 이를 구비한 반도체 패키지의 제조방법 |
KR101038491B1 (ko) * | 2004-04-16 | 2011-06-01 | 삼성테크윈 주식회사 | 리드프레임 및 그 제조 방법 |
-
2004
- 2004-04-16 KR KR1020040026204A patent/KR101038491B1/ko active IP Right Grant
- 2004-11-04 US US10/981,417 patent/US7268021B2/en active Active
- 2004-11-08 TW TW093133950A patent/TWI347663B/zh active
- 2004-12-03 CN CNB200410098317XA patent/CN100405564C/zh active Active
-
2005
- 2005-03-30 JP JP2005097752A patent/JP2005311353A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105489506A (zh) * | 2016-01-12 | 2016-04-13 | 成都先进功率半导体股份有限公司 | 高焊线质量的芯片框架及其制造方法 |
CN105489506B (zh) * | 2016-01-12 | 2018-02-06 | 成都先进功率半导体股份有限公司 | 高焊线质量的芯片框架及其制造方法 |
TWI793530B (zh) * | 2020-02-26 | 2023-02-21 | 日商松田產業股份有限公司 | 鈀-鎳合金鍍膜及其製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101038491B1 (ko) | 2011-06-01 |
US7268021B2 (en) | 2007-09-11 |
TW200536092A (en) | 2005-11-01 |
KR20050100966A (ko) | 2005-10-20 |
US20050233566A1 (en) | 2005-10-20 |
TWI347663B (en) | 2011-08-21 |
JP2005311353A (ja) | 2005-11-04 |
CN100405564C (zh) | 2008-07-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1819189A (zh) | 电路装置及其制造方法 | |
CN1220250C (zh) | 半导体器件的制造方法 | |
CN1151008C (zh) | 高强度焊接头 | |
CN1110072C (zh) | 半导体器件的凸出电极形成方法 | |
CN1112729C (zh) | 电子器件中的电连接结构和导体表面材料的形成方法 | |
CN1444273A (zh) | 电子装置 | |
CN1443625A (zh) | 焊料 | |
CN1188439A (zh) | 焊料、用焊接法贴装的电子元件及电路板 | |
CN1052765A (zh) | 在电路板的焊盘上形成焊料层的方法以及在电路板上安装电子零件的方法 | |
CN1538518A (zh) | 导体衬底,半导体器件及其制造方法 | |
JP2007158327A (ja) | スズメッキ又はスズメッキから形成された金属間層を備えるリードフレーム | |
CN1428854A (zh) | 半导体装置及其制造方法 | |
JP2010238932A (ja) | パワーモジュール用基板、ヒートシンク付パワーモジュール用基板及びパワーモジュールの製造方法 | |
JPWO2008038681A1 (ja) | セラミック基板部品及びそれを用いた電子部品 | |
CN1264391C (zh) | 布线基板的制造方法 | |
JP2005311353A (ja) | リードフレーム及びその製造方法 | |
CN1253932C (zh) | 半导体装置的制造方法 | |
TWI381505B (zh) | 導線架與利用此導線架製造半導體封裝的方法 | |
CN1855471A (zh) | 用于半导体封装的引线框及其生产方法 | |
CN1817071A (zh) | 使用无Pb焊料的回流焊接方法以及混载实装方法和结构体 | |
CN1577825A (zh) | 用于半导体封装的引线框架 | |
CN101034700A (zh) | 内藏电子部件型模块及内藏电子部件型模块的制作方法 | |
CN1224100C (zh) | 树脂密封型的半导体装置 | |
JP3407839B2 (ja) | 半導体装置のはんだバンプ形成方法 | |
TWI231019B (en) | Lead frame and manufacturing method thereof and a semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: MDS CO., LTD. Free format text: FORMER OWNER: SAMSUNG TECHWIN CO., LTD. Effective date: 20140722 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20140722 Address after: Gyeongnam, South Korea Patentee after: MDS Co., Ltd. Address before: Gyeongnam, South Korea Patentee before: Samsung TECHWIN Co., Ltd. |
|
C56 | Change in the name or address of the patentee |
Owner name: HAICHEDIACE CO., LTD. Free format text: FORMER NAME: MDS CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Gyeongnam, South Korea Patentee after: Marine origin Supreme Being Ace Co., Ltd. Address before: Gyeongnam, South Korea Patentee before: MDS Co., Ltd. |