CN1253932C - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN1253932C
CN1253932C CNB031041337A CN03104133A CN1253932C CN 1253932 C CN1253932 C CN 1253932C CN B031041337 A CNB031041337 A CN B031041337A CN 03104133 A CN03104133 A CN 03104133A CN 1253932 C CN1253932 C CN 1253932C
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metal level
semiconductor chip
pad projection
scolder
substrate
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Expired - Fee Related
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CNB031041337A
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CN1440065A (zh
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汤泽秀树
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Seiko Epson Corp
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Seiko Epson Corp
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Abstract

一种半导体装置的制造方法，包括把半导体芯片(10)安装在基板(20)上。在安装工序中，把半导体芯片(10)的电极(12)和在基板(20)上所形成的引线(22)对向设置。电极(12)在与引线(22)的接合部分的至少一部分上具有含有焊料(18)的焊盘凸起。在电极(12)和引线(22)的两方的周围设置绝缘材料(30)后，使焊料(18)溶化，把电极(12)和引线(22)接合。从而可实现高可靠性接合的半导体装置的制造方法。

Description

半导体装置的制造方法
技术领域
本发明涉及半导体装置的制造方法。
背景技术
以往，在以面朝下焊接将焊盘凸起和引线进行焊接时，因焊接时的热量，形成有引线的基板会发生膨胀，相应地引线的间距变大而使其与焊盘凸起的间距不吻合，从而造成焊盘凸起与引线错位。这种情况下，当基板冷却收缩后，被焊接起来的焊盘凸起或引线有时会倾斜。还有，当基板受热变形而产生翘曲时，引线有时会与半导体芯片接触。并且焊盘凸起和引线的合金有时会沿它们的间距方向生长过多，而使相邻的焊盘凸起间及引线间发生短路。因而，现有技术的面朝下焊接在可靠性方而存在问题。
发明内容
本发明是为了解决上述问题而提出的，其目的是为提供高可靠性的半导体装置的制造方法。
(1)有关本发明的半导体装置的制造方法是，包括：将具有引线的基板、和在与所述引线相连接的部分的至少一部分上具有含有焊料的焊盘凸起的半导体芯片配置成，使所述半导体芯片的具有所述焊盘凸起的面与所述基板的具有所述引线的面构成对向，
对所述基板及所述半导体芯片的至少一方施加压力，
使所述焊料溶化，将所述引线和所述焊盘凸起接合，其特征在于，
在所述引线与所述焊盘凸起之间的接合工序前，在所述引线和所述焊盘凸起的两方的周围设置绝缘材料。
依据本发明，由于是通过焊料将引线和焊盘凸起接合，故不需要高温加热，基板膨胀小。因此可以避免引线和焊盘凸起发生错位，还可以避免被焊接起来的引线或焊盘凸起发生倾钭，同时也可以避免引线与半导体芯片相接触。并且由于是在引线和焊盘凸起周围设置绝缘材料后，使焊料溶化，所以溶化了的焊料及合金很难从引线和焊盘凸起的侧面流出，这样就可以避免相邻引线及焊盘凸起间的短路现象。
(2)有关本发明的半导体装置的制造方法是，包括：将具有电极的半导体芯片、和在与所述电极相连接的部分的至少一部分上具有含有焊料的焊盘凸起的基板配置成，使所述半导体芯片的具有所述电极的面与所述基板的具有所述焊盘凸起的面构成对向，
对所述基板及所述半导体芯片的至少一方施加压力，
使所述焊料溶化，将所述电极和所述焊盘凸起接合，其特征在于，
在所述电极与所述焊盘凸起之间的接合工序前，在所述电极和所述焊盘凸起的两方的周围设置绝缘材料。
依据本发明，由于是通过焊料将电极和焊盘凸起进行焊接，故不需要高温加热，基板膨胀小。因此可以避免电极和焊盘凸起发生错位，还可以避免被焊接起来的电极或焊盘凸起发生倾钭，同时也可以避免引线与半导体芯片相接触。并且由于是在电极和焊盘凸起周围设置绝缘材料后，使焊料溶化，所以溶化了的焊料及合金很难从电极和焊盘凸起的侧面流出，这样就可以避免相邻的电极及焊盘凸起间的短路现象。
(3)在所述半导体装置的制造方法中，
在配置上述半导体芯片和上述基板的工序中，也可以将绝缘材料设置在上述半导体芯片和上述基板之间。
(4)在所述半导体装置的制造方法中，
在对上述基板或上述半导体芯片施加压力的工序后，也可以将上述绝缘材料注入到上述半导体芯片和上述基板之间。
(5)在所述半导体装置的制造方法中，
上述绝缘材料为树脂，
上述电极和上述焊盘凸起在进行焊接工序前，在上述电极和上述焊盘凸起的周围设置绝缘材料后，也可以包括固化上述树脂的工序。
(6)在所述半导体装置的制造方法中，
上述焊盘凸起具有第1金属层和在上述第1金属层上所形成的第2金属层，上述第2金属层也可以由比上述第1金属层更易溶合上述焊料的材料所形成。
(7)有关本发明的半导体装置是按上述方法制造而成。
(8)有关本发明的电子机器具有上述半导体装置。
附图说明
图1A～图1C所示的是应用本发明的实施方案的半导体装置的制造方法的图。
图2A～图2C所示的是焊盘凸起的形成方法的图。
图3A～图3C所示的是焊盘凸起的形成方法的图。
图4A～图4B所示的是焊盘凸起的形成方法的图。
图5A～图5B所示的是焊盘凸起的形成方法的图。
图6A～图6C所示的是焊盘凸起的形成方法的图。
图7A～图7C所示的是焊盘凸起的形成方法的图。
图8A～图8B所示的是焊盘凸起的形成方法的图。
图9A～图9B所示的是焊盘凸起的形成方法的图。
图10A～图10C所示的是焊盘凸起的形成方法的图。
图11A～图11B所示的是焊盘凸起的形成方法的图。
图12所示的是具有应用本发明的实施方案的半导体装置的电子机器的图。
图13所示的是具有应用本发明的实施方案的半导体装置的电子机器的图。
图14所示的是具有应用本发明的实施方案的半导体装置的电子机器的图。
具体实施方式
下面参照附图对本发明的实施方案进行说明。在本实施方案的半导体装置的制造方法中，以半导体芯片上设置有焊盘凸起为例进行说明。图1A～图1C是本发明实施方案的半导体装置的制造方法。半导体装置的制造方法包括通过面朝下焊接将半导体芯片10安装在基板20上。
半导体芯片10有多个电极12。这里，也可以是在半导体晶片上有多个电极12。各电极12是由衬垫(pad)14和焊盘凸起(bump)16构成。这里，在衬垫14上形成了焊盘凸起16，也可以在衬垫14和焊盘凸起16之间形成底衬焊盘金属等的金属层。衬垫14，例如由铝形成。焊盘凸起16，如后面将要叙述的那样，是在金属层17上面设置有焊料18的构成。也就是说，焊盘凸起16在与引线22的接合部的至少一部分上含有焊料18。例如，焊料18是由低溶点金属锡或焊锡等的材料构成。金属层17也可以包括如后面将要叙述的第1金属层和第2金属层。
基板20既可以是挠性基板也可以是刚性基板。基板20例如是在由聚酰亚胺树脂组成的基底板上形成了多个引线22。由多个引线22形成布线图形。引线22也可以由多层金属层形成。
如图1A所示，将半导体芯片10及基板20设置成使电极12及引线22构成对向。也就是将半导体芯片10及基板20的位置对正。然后如图1B所示，在电极12和引线22的周围设置绝缘材料30。绝缘材料30，只要具有电绝缘性即可并不做特别限定，可以是树脂(例如粘接剂)。可以将液体状的绝缘材料30注入到半导体芯片10和基板20之间。或者也可以在半导体芯片10上的形成有电极12的面上和在基板20上的形成有引线22的面上的至少一方设置绝缘材料30后，将半导体芯片10及基板20经绝缘材料30贴紧。这种情况也可以使用薄膜状绝缘材料30。这里，也可以使绝缘材料30固化。
下面，如图1C所示，通过加热使焊料18熔化后，将电极12和引线22进行焊接。可以由熔化了的焊料18和引线22形成共晶合金，依据本实施方案，由于是通过焊料18将电极12和引线22焊接，所以不需要高温加热，基板20的膨胀小。因此可以避免电极12和引线22发生的错位，从而可以避免被焊接起来的电极12或引线22发生的倾钭，也可以避免引线22与半导体芯片10相接触。并且由于是在电极12和引线22的周围设置绝缘材料30后，使焊料18溶化，所以溶化了的焊料18及合金很难在电极12和引线22的间距方向上流出，这样就可以避免相邻电极12及引线22间的短路。特别是树脂不易被焊锡渗透(易弹出焊锡)，所以对避免相邻电极12及引线22间的短路更有效果。
还有，本实施方案不只是限定于此，还可应用于将焊盘凸起16设置在基板20上的情况。这种情况下，半导体芯片10的各电极12是由衬垫14构成。基板20的引线22，至少包括岛(land)与设置在岛上的焊盘凸起16。焊盘凸起16在与电极12焊接部的至少一部分上包括焊料18。在岛与焊盘凸起16之间可以形成其他金属层。除此以外，因与上述实施方案的内容相同，故省略。
如上所述的焊盘凸起16，可以用下列说明的方法形成。
(第1例)
在本例中，以半导体芯片上形成的焊盘凸起为例进行说明，但有关本发明的焊盘凸起的形成方法，不只限定于此，也可以应用于在布线图形上形成焊盘凸起。这种情况下，布线图形上的岛就相当于衬垫。另外，本发明也可以应用于在半导体片上所形成的衬垫上形成焊盘凸起。也就是说，下列说明的内容不限定于半导体芯片处理，也同样适用对半导体片的处理。
如图2A所示，形成抗蚀层120。在半导体芯片110的形成有衬垫112的面上，即在绝缘膜114上，形成抗蚀层120。抗蚀层120在衬垫112的上方具有通孔122。可以采用光刻技术形成通孔122。即可以经掩膜对感光性的抗蚀层120进行光照、显影而形成通孔122。这时，抗蚀层120既可以是正向型也可以是负向型的保护，另外，也能以20μm左右的厚度形成抗蚀层120。
或者，也可以对非感光性抗蚀层120进行蚀刻而形成通孔122。还有也可以采用丝网印刷或喷墨方式形成抗蚀层120。
最好使形成的通孔122为不超过衬垫112外围的形状。这样，就可以在以窄间距设置的多个衬垫112的每一个上形成焊盘凸起。并且，最好使通孔122由垂直于半导体芯片110的面的壁面形成。这样，就可以形成垂直凸起的焊盘凸起。另外，通孔122的平面形状，比如可以是圆形或矩形并不作限定。
如图2B所示，将抗蚀层120作为掩膜，除去通孔122内的绝缘膜114的部分后，形成露出衬垫112的至少一部分的开口部116。开口部116可以由蚀刻法形成。蚀刻的方法可以采用化学法、物理法或利用这些组合中的任一种方法。另外蚀刻的特性可以是各向同性或各向异性中的任何一种。如后所述即使是在所有方向上同样地进行蚀刻的各向同性的蚀刻法也能适用于本发明。
如图2B所示，在本例中，将开口部116形成在俯视观察时的通孔122的形状范围内。这样的开口部116例如可以由各向异性的蚀刻形成。这样，只要在通孔112内形成第1金属层130，就可以不让衬垫112的表面暴露出来。另外，通过使用形成在抗蚀层120上的通孔122，可以很容易地形成绝缘膜114的开口部116。
如图2C所示，在通孔122上形成第1金属层130。由于通孔122与开口部116连通状态，所以通过在通孔122上形成第1金属层130，就可以形成与衬垫112电连接的焊盘凸起。可以使第1金属层130不超过通孔122的高度，即只形成在通孔122的内侧。或者，第1金属层130可以同抗蚀层120成同一平面，也可以超过通孔122的高度。第1金属层130也可以由镍(Ni)、铜(Cu)或金(Au)等形成。并且，第1金属层130既可以是如图2C所示的单层，也可以是由多层所形成。
第1金属层130可以通过无电解电镀(包括置换电镀)而形成。例如，在衬垫112是由铝形成的情况下，使用碱性锌溶液，对衬垫112进行锌酸盐处理后，使铝表面上置换析出锌(Zn)，这种情况下，最好将抗蚀层120提前预加热到200℃左右。这样就可以提高抗蚀层120耐强碱性溶液的性质。并且为防止抗蚀层120因热变形，可以对抗蚀层120进行紫外线照射。而且在衬垫112的表面析出锌时，可以将衬垫112浸入到碱性锌溶液中后，通过硝酸溶解已置换的锌，再次将其浸放到碱性锌溶液中。然后，在表面已被置换成锌的衬垫112上设置无电解镍溶液后，经过锌与镍的置换反应在衬垫112上形成由镍构成的第1金属层130。
而且，对衬垫112进行锌酸盐处理前，最好用规定的溶液(例如弱氟酸溶液)将半导体芯片110的绝缘膜114的残余部分溶解。并且，在将绝缘膜114的残余部分溶解后，最好将衬垫112浸入碱性溶液中，除去衬垫112的裸露部分的氧化膜。这样可以将衬垫112的表面良好地置换成铝。
然后，比如，通过锌酸盐处理，在衬垫112上形成第1金属层130的情况下，也可以在铝(衬垫112)上残留一部分锌层，这样第1金属层也包括锌层。
或者，与锌酸盐处理不同，也可以在由铝构成的衬垫112上设置含钯等的还原剂溶液，之后再设置无电解镍溶液，在衬垫112上析出以钯为核的由镍构成的第1金属层130。一般情况下，镍比金形成的时间可以更短。另外，第1金属层130的厚度可以为15～25μm左右。
如图3A所示，在保持残留的抗蚀层120的状态下形成第2金属层133。即在第1金属层130上形成第2金属层133。第2金属层133可以是单层也可以是多层中任意一种。第2金属层133也可以由金(Au)形成。第2金属层133若是由多层构成的情况下，至少表层可以由金形成。第2金属层133的厚度可以是0.1～0.2μm左右。而且第2金属层133可以由无电解电镀形成。
如图3B所示，除去抗蚀层120。这样就形成了包含第1金属层130和第2金属层133的金属层142。
下面，如图3C所示，在金属层142上设置焊料144，具体地就是在第2金属层133上设置焊料144，焊料144无论是软焊料还是硬焊料中的哪种都可以，比如可以是焊锡或导电胶等。
最好使第2金属层133由比第1金属层130更易溶合焊料144的材料形成。若用焊锡作为焊料144时，最好使第2金属层133，是比第1金属层130更容易被焊锡渗透的材料。例如，如上所述，第2金属层133至少其表面可以由金形成，这样可以以良好的状态在第2金属层133上设置焊料144。而且第2金属层133的材料不限定为金，与焊料144易溶合的其他金属也可以。
在金属层142上设置焊锡时，比如，也可以将金属层142的上面(第2金属层133)浸入到焊锡槽中，即可以用浸渍法设置。这样因焊锡容易附着在金(Au)(第2金属层133)层上，所以在金属层142上就容易设置焊锡。或者也可以通过让金属层142与已被溶化了的焊锡的表面接触，使焊锡附着在第2金属层133上。并且也可以通过丝网印刷或喷墨方式，在金属层142上设置焊锡。焊锡可以由含锡(Sn)和银(Ag)的材料形成。金属层142上设置的焊锡的高度例如为10～20μm的程度就可以。另外，本例中的焊盘凸起包括金属层142(第1金属层130和第2金属层133)及焊料144。
焊料144可以是含锡(Sn)的金属，或者焊料144也可以是含有银(Ag)、铜(Cu)、铋(Bi)、锌(Zn)中一种或多种金属。焊料144的膜的厚度，可以调整到相邻的焊盘凸起间不要短路就可以。例如，当与焊盘凸起相连部分的材料(例如引线)的表面为金(Au)时，使焊料144的膜厚约为0.1～3μm，就可以形成有足够接合强度的Sn-Au共晶接合。另外，只要具有这种程度的膜厚，即使相邻焊盘凸起间的间距极小(比例约7μm)，焊接时进行回焊，可以防止焊盘凸起间的短路。
或者，与上述例子不同，也可以在第1金属层130上直接设置焊料144(第2金属层)。也就是说，焊盘凸起包括第1金属层130和焊料144。比如，也可以在镍层(第1金属层130)上涂覆焊料144形成焊盘凸起，焊料144可以形成覆盖住整个第1金属层130，或者也可以形成在第1金属层130的表面。
在本例中，金属层142因具有位于其上表面的第2金属层133，所以例如当第2金属层133是由与焊料144易溶合的材料形成时，可以使设在金属层142上的焊料144的量做到适量。具体地讲，可以把焊料144只设置在金属层142的上面。
(第2例)
图4A及图4B所示的是第2例的焊盘凸起的形成方法的图。通过本工序形成的焊盘凸起146(参考图4B)，包括金属层(第1金属层130及第2金属层133)和焊料144。在本例中，按形成树脂层124的形状将焊料144设置在金属层(第1金属层130及第2金属层133)的周围。
如图4A所示，形成第1及第2金属层130、133。可以留下抗蚀层120，将第2金属层133形成在第1金属层130的上面。或者，第2金属层133也可以在除去抗蚀层120后，形成覆盖住第1金属层130的表面。而且第2金属层133可以是由比第1金属层130更易与焊料144溶合的材料形成。换言之，第2金属层133可以是由比第1金属层130更易附着焊料144的材料形成。
下而，如图4B所示，金属层(第1及第2金属层130、133)上设置焊料144。本工序是在金属层(第1及第2金属层130、133)的周围设置树脂层124。
树脂层124是避开在衬垫112上所形成的各金属层(第1及第2金属层130、133)的一部分进行设置的。具体地就是树脂层124设置成至少将第2金属层133的一部分露出。树脂层124可以避开金属层(第1及第2金属层130、133)的上面进行设置，如图所示，也可以将树脂层124与金属层(第1及第2金属层130、133)的上面设置在几乎成一个而上。
除去抗蚀层120后，可以再次在金属层(第1及第2金属层130、133)的周围形成树脂层124。或者，可以使用残留下来的抗蚀层120作为树脂层124，后者的情况下，因形成金属层(至少第1金属层130)的层和设置焊料144的层使用已形成的抗蚀层120就可以达到简化工序的目的。并且用抗蚀层120作为树脂层124时，最好使第2金属层133与抗蚀层120形成在大致一个面内。
树脂层124可以采用光刻法、蚀刻法、丝网印刷法、喷墨方式、扩散法，配料器涂覆等形成。例如，也可以在半导体芯片110的形成有衬垫112的面上，避开多层的金属层(第1及第2金属层130、133)，涂敷聚酰亚胺树脂并使其上面大致在一个面上。并且也可以根据需要，通过蚀刻法等使金属层(第1及第2金属层130、133)的上表面裸露出来。此时，也可以通过照射氧等离子让表面裸露出来，此外，通过用蚀刻法等使金属层(第1及第2金属层130、133)的一部分裸露出来，使树脂层124的厚度比金属层(第1及第2金属层130、133)的厚度(高度)稍薄也没关系。
这样形成树脂层124后，在金属层(第1及第2金属层130、133)上设置焊料144。焊料144可以是如上内容中已说明的，例如可以是焊锡(比如含锡、银及铜的合金)。另外，焊料144可以通过使金属层(第1及第2金属层130、133)的至少从树脂层124的露出面，与已经溶化了的焊锡的表面接触进行设置。这时，若第2金属层133由易溶合焊料144的材料形成的话，就可以将焊料144可靠地设置在第2金属层133上。而且在金属层(第1及第2金属层130、133)上设置的焊锡高度比如可以是10～20μm的程度。
树脂层124因不易渗透焊锡(易弹开焊锡)，所以可以只在金属层(第1及第2金属层130、133)的露出面上设置适量的焊锡。
(第3例)
图5A及图5B所示的是第3例中的焊盘凸起的形成方法的图。在本例中第1金属层190的形态与上述不同。
如图5A所示，超出抗蚀层120的通孔122的高度，也就是流出到外侧地形成第1金属层190。换言之，使第1金属层190形成为从通孔122处溢出。当用无电解电镀形成第1金属层190时，通过工作温度及时间、电镀液的量及pH和电镀次数(置换次数)等来控制其厚度即可。
第1金属层190在通孔122的外侧部分向所有方向生长。也就是说，第1金属层190，在通孔122的外侧不仅在高度方向上而且还在宽度方向生长。因此，第1金属层190就被形成为其前端部超过通孔122的宽度。
其次，形成第2金属层192。如图所示也可以留下抗蚀层120形成第2金属层192。这种情况下，第2金属层192被形成在第1金属层190的前端部(通孔122的外侧部分)。或者，可以在除去抗蚀层120后形成第2金属层192。这种情况下，可以覆盖第1金属层190的表面地形成第2金属层192。此外，第1及第2金属层190、192的其他形态及形成方法可以适用至此所叙述的内容。
如图5B所示，去除抗蚀层120。这样，形成焊盘凸起200(第1及第2金属层190、192)。焊盘凸起200包括主体部194和前端部196。
焊盘凸起200的主体部194，被设置成与衬垫112相连接。主体部194成柱状(例如圆柱形或棱柱形)。与通孔122的形状相吻合形成主体部194。形成的通孔122不超过衬垫112时，主体部194形成在半导体芯片110的俯视观察时的衬垫112的内侧。并且主体部194的厚度(高度)依照抗蚀层120的通孔122的高度而形成。
焊盘凸起200的前端部196被设置成与主体部194连接。前端部196比主体部194的宽度还要宽。例如，在半导体芯片110的俯视观察时的主体部194成矩形时，形成的前端部196至少超过主体部196的一个边(最好是所有的边)。并且在一个衬垫112上所形成的焊盘凸起200的前端部196，在半导体芯片110的俯视观察时，可以以各自不同的长度，向朝向相邻衬垫112的方向和与此不同方向突出。比如，在前端部196上，朝着衬垫112的方向上超出主体部194的部分，可以比在与此不同方向上超出主体部194的部分更短。这样，可以防止各个相邻衬垫112的前端部196间的电接触。并且，前端部196可以比衬垫112的宽度更大，或者比主体部194的宽度更大，而比衬垫112的宽度更小。
在焊盘凸起200(金属层)上设置焊料144。焊料144如上所述，比如可以是焊锡。焊料144的形成方法如上所述。通过使形成的焊盘凸起200的前端部196比主体部194大，在前端部196的超出主体部194的部分与主体部194之间形成储备焊料144的空间198。比如，空间198可以形成在由前端部196上的朝向衬垫112的面与主体部194的侧面所形成的填料角上。
除了图5A及图5B所示的例子之外，也可以从通孔122溢出地形成第2金属层192。也就是说，也可以以不超出抗蚀层120的高度形成第1金属层190，在留下抗蚀层120的状态下，超出抗蚀层120地形成第2金属层192。即使这种情况，也可以得到上述所示的效果。
(第4例)
图6A～图9B所示的是应用本发明的第4例中有关焊盘凸起的形成方法的图。图9A及图9B所示的是对本例的变形例图。在本例中由电解电镀形成第2金属层280。
如图6A所示，在半导体芯片110上所形成的绝缘膜114上，形成导电膜270。导电膜270是通过电解电镀用于形成第2金属层280的电镀引导。导电膜270至少从各衬垫112的上方，按规定的形状围在绝缘膜114上。具体地说，导电膜270，在俯视观察半导体芯片110时，从各衬垫112上围向半导体芯片110的外围方向上。也可以使形成的导电膜270在绝缘膜114上覆盖住各衬垫112。即，导电膜270可以对应各衬垫112的位置形成岛状，或者，导电膜270可以通过各衬垫112地形成线状。导电膜270的厚度考虑了与后面所形成的第1金属层130的电接触后可以自由确定，例如也可以是50～200nm左右。并且导电膜270只要是导电材料其材料不作限定，比如可以由镍(Ni)、铬(Cr)、钛(Ti)、钨(W)、白金(Pt)中的任意一种材料形成。导电膜270的形成方法也不限定，例如用喷镀法、蒸镀法等形成就可以。
如图6B所示，形成了导电膜270后，形成抗蚀层120。在绝缘膜114上及绝缘膜114的导电膜270所形成的部分上形成抗蚀层120。如果导电膜270的一部分在衬垫112的上方以岛的形式形成时，使外周位于该岛的内侧地形成抗蚀层120的通孔122。这样，相应通孔122的平面形状在导电膜270上形成开口部272时，可以达到导电膜270与第1金属层130的电接触的目的。另外，抗蚀层120的厚度不限定，然而举例来说的话，15～40μm厚就可以。
如图6C所示，在各通孔122的内侧形成绝缘膜114的开口部116及导电膜270的开口部272。各开口部116、272形成连通，这样，在通孔122的内侧使衬垫112的至少一部分露出。开口部116、272可以由蚀刻法形成，其方法可以是湿式蚀刻法或干式蚀刻法的任意一种。绝缘膜114及导电膜270可以是通过一次开口，或者也可以在导电膜270上形成了开口部272后，再形成绝缘膜114上的开口部116。开口部116、272可以如图所示形成与通孔122的外围大致同样大小，或者也可以使形成的外周不超出通孔122的外周。
如图7A所示，形成第1金属层130。第1金属层130可以由无电解电镀形成。第1金属层130在通孔122内达到导电膜270的高度。例如，可以使形成的第1金属层130比绝缘膜114和导电膜270的合计厚度还要厚。这样，可以使第1金属层130通过通孔122的外周与导电膜270接触。并且，第1金属层130可以比抗蚀层120更低地形成。这样在用电解电镀形成第2金属层280时，可以以通孔122的宽度来形成第2金属层280。即，能够抑制第2金属层在各向上生长，而按规定的宽度在第1金属层130上形成。而且，第1金属层130的厚度不限定，然而举例来说的话，1～30μm厚就可以。
还有，第1金属层130可以由多层形成，因由焊料形成第2金属层280，所以在第1金属层130的与第2金属层280相连接的上层，可以由比与衬垫112相连接的下层更易溶合焊料的材料形成，比如第1金属130的上层可以由金形成。
如图7B所示，形成第2金属层280。第2金属层280由电解电镀形成。具体地说就是将与第1金属层130电连接的导电膜270作为电极，通过电解电镀，形成与第1金属层130相连的第2金属层280。第2金属层280如图所示，可以与抗蚀层120大致成一个面地形成。或者可以比保护层更低地形成。第2金属层280由焊料形成，即，由电解电镀设置好的第1金属层130上设置焊料。焊料比如可以用焊锡。焊锡的组成不限定，但可以是Sn、Sn-Pb、Sn-Ag、Sn-Cu、Sn-Ag-Cu、SnZn等。若通过电解电镀形成焊锡的话，与通过无电解电镀形成相比，可以减小其组成的不一致性，因此可以减小焊锡的溶解温度不一致。而且第1金属层130因是通过简单的工序的无电解电镀形成的，所以与由电解电镀形成全部相比，可以更简单地形成金属层。
如图7C所示，除去抗蚀层120。如果除去抗蚀层120，绝缘膜114上的导电膜270就暴露出来。
如图8A所示，除去导电膜270。导电膜270可以用湿蚀刻法或干蚀刻法除去。并且因导电膜270在形成了第2金属层280后在该工序中除去的，所以预先较厚地形成导电膜也没关系。
如图8B所示，除去抗蚀层120及导电膜270后，必要的话可以进行回焊工序，回焊工序可以在涂完助焊剂后进行，或是可以没有助焊剂在氮气中进行。使用助焊剂的情况下，回焊工序结束后，最好进行清洗工序，回焊的状态不作限定，可以使用红外线炉、远红外线炉或热风炉等的回焊炉，而且，可以用激光或卤素光等照射，点照射或全照射都可以。还有在上例中，除去抗蚀层120后，进行回焊工序，除此之外，可以从残留有抗蚀层120的状态进行回焊工序，这种情况下，在回焊工序结束后，再除去抗蚀层120。
这样在各衬垫112上就可以形成包括第1及第2金属层的130、280的焊盘凸起202。因此通过简单工序就可以形成高可靠性连接的焊盘凸起。
下面所示的是本例的变形例子。如图7A所示形成第1金属层130后，如图9A所示由通孔122处溢出形成第2金属层282。即，比抗蚀层120较高地形成第2金属层282。然后如图9B所示，除去抗蚀层120后，如有必要可以进行回焊工序。这样，在各衬垫112上就可以形成包括第1及第2金属层的130、280的焊盘凸起204。在该变形例子中也可以获得上述所说的效果。
(第5例)
图10A～图11B所示的是应用本发明的第5例中有关焊盘凸起的形成方法的图。在本例中，由印刷法形成第2金属层284。
如图10A所示，经抗蚀层120的通孔122，在绝缘膜114上形成开口部116。这样使各衬垫112的至少一部分裸露。
如图10B所示，形成第1金属层130。第1金属层130是由无电解电镀形成。第1金属层130比抗蚀层120更低地形成。具体的就是，在随后的工序中以不超过通孔122的高度，较低地形成第1金属层130，并要留出能形成第2金属层284的空间。
而且第1金属层130可以由多层形成。第2金属层284由焊料形成。与第2金属层284连接的上层，可以由比衬垫112连接的下层更易溶合焊料的材料形成。例如第1金属层130的上层可以由金形成。
如图10C所示按印刷法形成第2金属层284。这种情况下将抗蚀层120作为印刷掩膜来用，具体的，就是将比抗蚀层120更低地形成的第1金属层130而产生的台阶，作为掩膜的开口来用。这里，第2金属层284是焊锡等焊料。例如将糊状的焊料涂在抗蚀层120上，由图中没有表示的橡皮滚子来填充通孔122。第2金属层284(焊料)的厚度，兼顾地考虑抗蚀层120及第1金属层130的厚度就可以决定。
如图11A所示，进行回焊工序。回焊工序可以在留下抗蚀层120的状态下进行。例如通过照射激光等使其溶化，通过表面张力形成半球状。
然后，如图11B所示，除去抗蚀层120。这样通过除去抗蚀层120，因为与在通孔122上形成的第2金属层284进行脱版，与掩膜的脱版好坏无关，就可以可靠地在第1金属层130上设置第2金属层284。并且，通过向掩膜渗透，也不会造成材料的涂覆量的变化。这样，可以各衬垫112上形成包括第1及第2金属层130、144的焊盘凸起206。
还有，在上例中，在留下抗蚀层120的状态下进行回焊工序，但除此之外，也可以在除去抗蚀层120后，再进行回焊工序。
依据本例，因不需要再次形成印刷用的掩膜，所以可以以较少的工序设置第2金属层284。另外由于不需要使用金属掩膜等，所以可以减少在制造工序中所用的零件数量，不用考虑掩膜的脱版好坏。
图12所示的是有关本发明的实施方案的半导体装置的一例。在该例中，使用COF(Chip On Film)方式的半导体装置1被安装在液晶屏1000上。半导体装置1具有上述所说的半导体芯片10和基板20，也可以把液晶屏1000称为电子机器。作为具有本发明的实施方案的半导体装置的电子机器，在图13中所示的是笔记本电脑1100，图14中所示的是移动电话1200。
本发明不被限定于上述所说的实施方案，还有各种变形的可能。例如，本发明包括与实施方案进行说明的构成在实质上相同的构成(例如功能、方法及结果相同的构成，或者目的和结果相同的构成)，并且本发明包括替换了不是实施方案进行说明的构成中的本质部分的构成。还有，本发明包括与实施方案进行说明的构成起相同作用效果的构成或可以达到相同目的的构成。再就是本发明包括在实施方案进行说明的构成中，附加了公知技术的构成。

Claims (10)

1.一种半导体装置的制造方法，包括：将具有引线的基板、和在与所述引线相连接的部分的至少一部分上具有含有焊料的焊盘凸起的半导体芯片配置成，使所述半导体芯片的具有所述焊盘凸起的面与所述基板的具有所述引线的面构成对向，
对所述基板及所述半导体芯片的至少一方施加压力，
使所述焊料溶化，将所述引线和所述焊盘凸起接合，其特征在于，
在所述引线与所述焊盘凸起之间的接合工序前，在所述引线和所述焊盘凸起的两方的周围设置绝缘材料。
2.根据权利要求1所述的半导体装置的制造方法，其特征在于，在配置所述半导体芯片和所述基板的工序中，将所述绝缘材料介于所述半导体芯片和所述基板之间进行配置。
3.根据权利要求1所述的半导体装置的制造方法，其特征在于，在对所述基板或所述半导体芯片施加压力的工序后，将所述绝缘材料注入所述半导体芯片和所述基板之间。
4.根据权利要求1～3中任一项所述的半导体装置的制造方法，其特征在于，所述绝缘材料为树脂，
在所述引线和所述焊盘凸起的接合工序前，在所述引线和所述焊盘凸起的周围设置绝缘材料后，包括使所述树脂固化的工序。
5.根据权利要求1～3中任一项所述的半导体装置的制造方法，其特征在于，所述焊盘凸起具有第1金属层和在所述第1金属层上所形成的第2金属层，所述第2金属层是由比第1金属层更易溶合所述焊料的材料所形成。
6.一种半导体装置的制造方法，包括：将具有电极的半导体芯片、和在与所述电极相连接的部分的至少一部分上具有含有焊料的焊盘凸起的基板置成，使所述半导体芯片的具有所述电极的面与所述基板的具有所述焊盘凸起的面构成对向，
对所述基板及所述半导体芯片的至少一方施加压力，
使所述焊料溶化，将所述电极和所述焊盘凸起接合，其特征在于，
在所述电极与所述焊盘凸起之间的接合工序前，在所述电极和所述焊盘凸起的两方的周围设置绝缘材料。
7.根据权利要求6所述的半导体装置的制造方法，其特征在于，在配置所述半导体芯片和所述基板的工序中，将所述绝缘材料介于所述半导体芯片和所述基板之间进行配置。
8.根据权利要求6所述的半导体装置的制造方法，其特征在于，在对所述基板或所述半导体芯片施加压力的工序后，将所述绝缘材料注入所述半导体芯片和所述基板之间。
9.根据权利要求6～8中任一项所述的半导体装置的制造方法，其特征在于，所述绝缘材料为树脂，
在所述电极和所述焊盘凸起的接合工序前，在所述电极和所述焊盘凸起的周围设置绝缘材料后，包括使所述树脂固化的工序。
10.根据权利要求6～8中任一项所述的半导体装置的制造方法，其特征在于，所述焊盘凸起具有第1金属层和在所述第1金属层上所形成的第2金属层，所述第2金属层是由比第1金属层更易溶合所述焊料的材料所形成。
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