CN1140334A - 耗散热量的半导体器件 - Google Patents

耗散热量的半导体器件 Download PDF

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CN1140334A
CN1140334A CN96100275A CN96100275A CN1140334A CN 1140334 A CN1140334 A CN 1140334A CN 96100275 A CN96100275 A CN 96100275A CN 96100275 A CN96100275 A CN 96100275A CN 1140334 A CN1140334 A CN 1140334A
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semiconductor device
heat radiation
radiation guide
semiconductor chip
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CN1125489C (zh
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卢亨昊
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Hanwha Aerospace Co Ltd
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Samsung Aerospace Industries Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/4951—Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

一种半导体器件，包括一个容纳半导体芯片的封装外壳和多个连接引线。每个连接引线的一端通过粘结构件连接到半导体芯片上，另一端位于封装外壳的外面且连接到电路衬底上。半导体器件还包括至少一个散热导片，其一端通过粘结构件连接到半导体芯片上，另一端位于封装外壳的外面且与电路衬底隔开。半导体器件还包括一个插进粘结构件之中的散热体，并且它有一部分连接到散热导片上。

Description

耗散热量的半导体器件
本发明涉及一种半导体器件，尤其是本发明涉及一种耗散半导体芯片产生的热量的半导体器件。
半导体器件根据装有半导体芯片的封装外壳分为好几种类型。一种芯片上引线(LOC)型的半导体器件9(其中引线用粘结物质例如粘接带连接到半导体芯片上)示于图1。参照图1，常规半导体器件9包括一个封装外壳1，一个半导体芯片2，引线3，以及一个粘结构件4。每个引线3的一端借助粘结构件4连接到安装在封装外壳1里面的半导体芯片2上。每个引线3的另一端则位于封装外壳1的外面并连接到电路衬底15上。
常规半导体器件9的一个问题是不能有效地耗散半导体芯片2产生的热量。因而常规半导体器件9的寿命缩短，并且使用器件9的产品的可靠性降低。
因此，本发明的目的在于使半导体器件有效耗散半导体芯片产生的热量，从而排除由于有关技术的缺点和局限引起的一些问题。
本发明的另外特性和优点将在下面的叙述中逐步提出来，并且通过叙述将逐步明确，或者可以通过发明的实地应用并清楚。本发明的目的和其他优点，将通过书面的叙述的和文件中的权利要求以及附图所特别指出的装置得到实现。
为获得根据本发明这些和其他的优点，正如这里所具体体现和概括叙述的一样，本发明包括一个具有容纳半导体芯片的封装外壳的半导体器件；以及多个连接引线，每个连接引线的一端通过粘结构件连接到半导体芯片上，而其另一端则位于封装外壳的外面并连接到电路衬底上。半导体器件还包括至少一个散热导片，其一端通过粘结构件连接到半导体芯片，其另一端位于封装外壳的外面并且与电路衬底隔开。半导体器件还具有一个插进粘结构件里面的散热体。
不言而喻，前面的一般叙述和下面的详细叙述两部分都仅仅是典型的和说明性的叙述，用来对权利要求的发明提供进一步的说明。
为了进一步理解本发明，把附图包括进来，并编入且构成本说明书的一部分，说明本发明的几个实施例，并与叙述一起，充作本发明的原理说明。
本发明的上述目的和优点，通过参照附图详细叙述其优选实施例，将变得一目了然，在附图中：
图1是常规半导体器件的一个截面视图；
图2是根据本发明的半导体器件的透视图；
图3是图2所示半导体器件沿III-III线所取的截面视图；
图4是图2所示半导体器件沿IV-IV线所取的截面视图；
图5是根据本发明的另一个实施例的截面视图；
现在将详细说及本发明的一个优选实施方式，其实施例示于附图中。凡是可能之处、同一标号在所有附图中均指同一个或相似的部件。
按照本文所述，并参照图2至4，本发明的半导体器件100的示范性实施例包括一个装在封装外壳10中的半导体芯片20。多个连接引线，各有一端通过粘结构件例如粘带40连接到半导体芯片20。各连接引线的另一端位于封装外壳10的外面并连接到电路衬底15。
半导体器件的100还包括多个散热导片60。每个散热导片60的一端(叫做内端)连接到粘结构件40，每个散热导片60的另一端(叫做外端)则位于封装外壳10的外面，散热导片60的外端最好弯曲得紧接封状外壳10的顶表面并与电路衬底15隔开。这样，散热导片60的外端部分就在不占用大空间的情况下拥有大的表面积。此外，散热导片60与粘结构件40的连接还可在散热导片60各内端互相连接的情形下得到进一步改善。
薄板形散热体50插入粘结构件40之中。散热体50与连接引线30电绝缘。如图4所示，散热体50最好有一部分连接到散热导片60上。散热体50和散热导片60最好用诸如铜或铝这样的不昂贵又具有高导热率的金属做成。
在本发明的半导体器件100中，由半导体芯片20产生的大部分热量通过散热体50转移到散热导片60上。而且，由于散热导片60的外端位于封装外壳10的外面，转移到散热导片60上的热量通过外端耗散到周围的空气中。因而，半导体器件的100的寿命能够增加，并且使用半导体器件100的产品的可靠性得以改善。
示范实施例的半导体器件100装有多个散热导片60，为的是获得较大的散热面积。但是，本发明的目的也能用另一种方法通过在半导体器件中仅安装一个具有增大了表面积的散热导片60达到。半导体器件101另一个可供选择的实施例示于图5中。
半导体器件101包括一个安放半导体芯片的封装外壳10，以及多个连接引线30。每个连接引线30的一端通过粘结构件40连接到半导体芯片20，而另一端则位于封装外壳的外面并连接到电路衬底15上。半导体器件101还包括多个散热导片60。各散热片60的一端通过粘结构件40连接到半导体芯片20而另一端(叫做外端)位于封装外壳10的外面并且与电路衬底15隔开。一个散热体50插在粘结构件40之中且包括一个连接到散热导片60的部分。
半导体器件101还包括一个连接到散热导片60的外端的热耗散构件70。热耗散构件70最好用铜或铝做成。半导体器件101的热交换面积由于热耗散构件70的表面积而增加。于是，半导体器件101能够更有效地耗散半导体芯片20产生的热量。
显然，对于熟悉本技术的那些人员来说，能够在不脱离本发明的精神和范围的情形下，做出本发明半导体器件的各种修改和变例。因而，这意味着只要这一发明的修改和变例包括在所附的权利要求及其等效的精神范围之内，本发明就覆盖这些修改和变例。

Claims (7)

1.一种半导体器件，包括：
一个容纳半导体芯片的封装外壳；
多个连接引线，每个连接引线的一端通过粘结构件连接到所述半导体芯片上，其另一端位于所述封装外壳的外面并连接到一个电路衬底上；
至少一个散热导片，有一端通过所述粘结构件连接到所述半导体芯片上，另一个端位于所述封装外壳的外面且与所述电路衬底隔开；以及
一个插进所述粘结构件之中的散热体。
2.权利要求1的半导体器件，其中所述散热体和散热导片是铜或铝。
3.权利要求1的半导体器件，其中所述至少一个散热导片是多个散热导片，而且所述多个散热导片的端部互相连接并通过所述粘结构件连接到所述半导体芯片上。
4.权利要求1的半导体器件，其中所述散热导片的外端弯曲成紧接所述封装外壳。
5.权利要求1的半导体器件，还包括一个连接到所述散热导片的外端的热耗散构件。
6.权利要求5的半导体器件，其中所述热耗散构件是铜或铝。
7.权利要求1的半导体器件，其中所述散热体有一部分连接到所述散热导片。
CN96100275A 1995-07-07 1996-05-20 耗散热量的半导体器件 Expired - Fee Related CN1125489C (zh)

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KR19924/1995 1995-07-07
KR19924/95 1995-07-07
KR1019950019924A KR0155843B1 (ko) 1995-07-07 1995-07-07 반도체장치

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US (1) US5644164A (zh)
JP (1) JPH0927575A (zh)
KR (1) KR0155843B1 (zh)
CN (1) CN1125489C (zh)
DE (1) DE19620202A1 (zh)
FR (1) FR2736467A1 (zh)
GB (1) GB2303248A (zh)
MY (1) MY113240A (zh)

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CN102857088B (zh) * 2012-08-28 2016-01-20 胜美达电机（香港）有限公司 电源供应模块

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KR970008435A (ko) 1997-02-24
KR0155843B1 (ko) 1998-12-01
GB2303248A (en) 1997-02-12
MY113240A (en) 2001-12-31
DE19620202A1 (de) 1997-01-09
CN1125489C (zh) 2003-10-22
FR2736467A1 (fr) 1997-01-10
GB9610349D0 (en) 1996-07-24
US5644164A (en) 1997-07-01
JPH0927575A (ja) 1997-01-28

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