CN1137173A - 丝焊方法，半导体器件，丝焊的毛细管及球块形成方法 - Google Patents

丝焊方法，半导体器件，丝焊的毛细管及球块形成方法 Download PDF

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CN1137173A
CN1137173A CN96104519A CN96104519A CN1137173A CN 1137173 A CN1137173 A CN 1137173A CN 96104519 A CN96104519 A CN 96104519A CN 96104519 A CN96104519 A CN 96104519A CN 1137173 A CN1137173 A CN 1137173A
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wire
spherical part
ball
piece
capillary
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CN1079167C (zh
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本隆司
辻和人
佐藤光孝
河西纯一
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Fujitsu Ltd
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Fujitsu Ltd
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Abstract

一种丝焊方法，包括：第一焊接工序，用来在金属丝中形成第一球形部分并把第一球形部分焊到第一被连接件上；球形部分形成工序，用来引导金属丝离开其被焊到内引线上的位置从而形成一预定的环，以及第二焊接工序，用于在金属丝的预定位置中形成第二球形部分；以及第二焊接工序；用于把第二球形部分焊接到作为第二被连接件的半导体元件的焊盘上。

Description

丝焊方法，半导体器件，丝焊的毛细管及球块形成方法
本发明涉及丝焊方法，半导体器件，用于丝焊的毛细管以及球块形成方法。特别是，涉及丝焊方法，半导体器件，和用于丝焊的毛细管以及形成能提供高效率的和可靠的丝焊的球块的方法。
一般地说，在半导体器件中的元件使用金属丝与作为外部连接端子的引线电气相连。这种金属丝通过丝焊装置处置，从而延伸在半导体元件上的焊盘和引线的内引线之间。
被处置的金属丝的数量等于在半导体器件上形成的焊盘数。随着集成度的不断提高，在半导体元件上提供的焊盘数也不断增加。结果，在焊盘和内引线之间要被处置的金属丝数也不断增加。
提高生产率和减少体积是制造半导体器件中的主要要求。减少各个金属丝的焊接时间可以提高生产率，同时减少金属丝的环形高度(下简称“环高”)可以减少体积。
图1图2表示按照常规的丝焊处理金属丝的现有技术。图3A-3C以及图4A-4C说明详细的丝焊方法。
图1所示为用最通用的丝焊方法处置的金属丝1。参见图1，金属丝1被设置在半导体元件2上形成的焊盘2a和引线架3的内引线3a之间。
为了把金属丝1设置在焊盘2a和内引线3a之间，首先把金属丝1焊接在焊盘2a上(第一焊接)。在这种情况下，在第一焊接中使用如图3A-3C所示的球式焊接。
如图3a、3c所示，形成金属丝1的金属线通过在丝焊装置中提供的毛细管引导。参看图3a，通过火花放电在线1的头部形成球状部分4。然后，如图3B所示，球形部分4使用毛细管7压向焊盘2a，并使用超声焊工艺焊在其上。
然后，伸向内引线3a的线1借助于沿图3c所示方向拉毛细管7的引导而实现的导向工艺形成。线1被焊在内引线3a上(第二焊接)。在这种情况下，在第二焊接中使用图4A-4C所示的跳焊工艺。
参见图4A，毛细管7的端部借助于拉向内引线3a的焊接位置被导向。接着，如图4B所示，毛细管7的端部向着内引线3a压下，从而使引线1用超声焊工艺焊到内引线3a上。被毛细管7压下的线1的部分被变形，从而使毛细管7压向内引线3a。
然后，毛细管被向上引导。与此同时，提供在丝焊装置中的夹具8夹住被固定的线1。因此，线1在其变形的位置被切断，因而失去了机械强度。
如上所述，按着最通用的丝焊方法，通过使用球式焊工艺的第一焊接和使用跳焊工艺的第二焊接把金属丝1如图1所示提供在半导体元件2的焊盘2a和引线架3的内引线3a之间(以后把这种提供线1的方法叫作正向焊)
下面参照图5A-6B说明球焊工艺和跳焊工艺的特点。
图5A是表示线1是如何使用球焊工艺被焊到焊盘2a的透视图，而图5B是焊接区的顶视图。如上所述，球焊工艺是这样进行的，在线1上通过火花放电形成球形部分4，然后焊到焊盘2a上。因此，在球形部分4的底部的焊接区从顶视图看一般呈圆环形并落在焊盘2a内。
图6A是表示线1是如何使用跳焊工艺被焊到内引线3a的透视图，图6B是焊接区的顶视图。如图所示，按照跳焊方法，因为线1被毛细管7挤压，线1就被压扁成为具有相当宽的区域的焊接部分9。作为比较，图6A和6B包括表示焊盘2a的虚线。其特点是，跳焊工艺比球焊工艺要求较宽的焊接区域。
在上述的正向焊接中，线1在焊在焊盘2a上之后被向上引导，然后被焊到内引线3a上。因而，由线1形成的环状的高度相对于半导体元件2的向上的主要表面是相当高的。
在图1所示的结构中，线1高出半导体元件2的向上的主要表面一个高度H。因而，正向焊接的问题在于，难于制造薄的半导体器件。
图2表示为了克服上述问题而提供的焊接方法中的金属丝5。在图2中，和图1中相同的元件采用相同的标号。
如图2所示，金属丝5被这样提供，使用火花放电在线5的末端形成伸出毛细管的球形部分4。然后把球形部分4压向引线架3的内引线3a，使得按照球焊工艺焊在其上。
然后把毛细管向上导向略高于半导体元件2的上主表面的高度，并水平引导使得金属丝5被引到焊盘2a上方的位置。然后把毛细管压向焊盘2a，并用跳焊工艺把其焊在焊盘2a上。更具体地说，在焊盘2a上预先提供金或其类似物制成的球块6，然后把线5焊在球块6上。
将会注意到图2所示的焊接方法的焊接顺序与图1所示方法的不同之处在于，在第一焊接时把线焊在内引线3a上而在第二焊接时把线焊在焊盘2a(更确切地说是焊盘2a上的球块6)上。这种用来提供线5的方法叫作反焊。
按照反焊法，线5首先被焊到低于半导体器件2的上主表面的内引线3a上，然后把线5导向和半导体元件2的主表面基本相同的高度。然后把毛细管水平地引导使得能把线5焊在焊盘2a(更确切地说，球块6)上。
如图2所示，在焊盘2a和内引线3a之间提供的线5被弯成近似直角(倒L形)，从而使由线5形成的环的高度低于图1所示结构的高度。因而，能够制造薄的半导体元件。
虽然上述的反焊法确保了所生产的半导体器件因为由线5形成的环相当低而具有小的高度，但它仍具有这样的问题，即球块6必须使用金或其类似物在焊盘2a上形成。
当使用跳焊把线5焊到焊盘2a上时，球块6作为缓冲器用来阻止毛细管的压力不直接地加到半导体元件2上。球块6也有改善丝焊的电阻的功能。
如果不使用球块6用跳焊工艺把线5直接地焊在焊盘2a上，就可能由于毛细管施加的压力而使半导体元件2被破坏。线5对焊盘2a的不充分的焊接可能使线5离开焊盘2a。因此，需要在常规的反焊中在焊盘2a上提供球块6。
常规的反焊具有的问题在于，对于若干丝焊的处理中，除去提供线5的处理之外，还需要提供球块6的处理，因而不能得到满意的生产效率。
在形成球块6时使用的球焊工艺是这样的：在金丝的末端形成金球，然后焊到焊盘2a上，在此之后，把金丝除去。在这种形成金球的工序中，压力被加到半导体元件2上。
如上所述，线5对球块6的焊接涉及施加在半导体元件2上的压力。因此，半导体元件2在丝焊工序期间受到两种情况的压力，即形成球块6时和焊接线5时产生的压力。这样，即使提供了球块6，在整个丝焊工序期间仍然有使半导体元件2被破坏的可能性。
如参照图5A-6B所述的，跳焊工艺比球焊工艺要求较宽的焊接区域。因此，在反焊中不可能以较高的密度在半导体元件2的上主表面上焊接金属丝5。如果半导体元件2具有高密度的焊盘2a，则不适合采用跳焊工艺。
因此，只有图1所示的正向焊接可用于高密度的半导体元件2。因此.由于上述原因使这种半导体元件2具有相当大的尺寸。
如上所述，反焊法适用于没有高密度的焊盘2a的半导体元件2。然而，球块6的上表面6a(焊有线5的表面)是粗糙的，因为这是切断金线的表面。因此，在线5和球块6之间存在的焊接强度是不满意的，从而使金属丝的可靠性不理想。
此外，如图8所示，如果在球块6的上表面产生一个特别大的块6b，则线5被焊在离开球块6的中心位置上。这时会在球块6的上主表面的边上出现一个边缘部分5a，其特点是具有低的焊接强度，这是由于线5由毛细管7弄扁而产生的。线5可能在与球块6的上主表面的边缘附近被切断。
因而，本发明的目的在于提供一种丝焊方法，一种半导体器件，一种用于丝焊的毛细管以及提供一种形成球块的方法，用这些方法可以消除上述的问题。
本发明的另一个并且更特定的目的在于，提供一种丝焊方法，一种半导体器件，一种用于丝焊的毛细管以及形成球块的方法，所述方法能提供效率的焊接处理，减少对于连接体的破坏，并减少半导体元件的高度。
为了达到上述目的，本发明提供一种丝焊方法，包括：
第一焊接步骤，用于在线上形成第一球形部分并把第一球形部分焊在第一被连接件上；
球形部分形成步骤，用来如此引导线离开第一被连接件，使得形成预定的环并在线的预定位置形成第二球形部分；以及
第二焊接步骤，用于把第二球形部分焊到第二被连接件上。
按照本发明的丝焊方法，当把金属丝焊到半导体元件上时，可以防止发生对半导体元件的破坏，这是因为第二球形部分以和反焊工艺中的球块相同的方式起作用。因为在线上形成第二球形部分，便不需和丝焊工序的工艺顺序相分离的附加工艺来形成球块。因而可以高效率地进行丝焊工序。用于把第二球形部分焊到所述第二被连接件的工序是所谓的球式焊接工序因而需要相当小的面积。因而，可以确保在具有高密度电极的半导体元件上进行丝焊工序。
最好是，在球形部分形成步骤中，在保持线不被切断的情况下形成第二球形部分。按照本发明的这一方面，可以以可靠的方式把第二球形部分定位在焊盘上。因而，第二球形部分便可以牢靠地焊在焊盘上。
最好至少第二球形部分通过火花放电形成。按照本发明的这一方面，不用改动现有的丝焊装置，因为一般都用火花放电工序来形成第一球形部分。
在另一个最佳实施例中，在第一球形部分被焊到第一被连接件之后，线被基本上垂直地向上引导；然后被水平地，一般呈直角地把线导向第二球形部分形成处，并将其焊在第二被连接件上。按照本发明的这一方面，提供在第一被连接件和第二被连接件之间的线是低的。因此，可以保证生产低高度的半导体器件。
为了实现上述目的，本发明提供一种丝焊方法，包括下列步骤：
按照权利要求1的丝焊方法提供第一金属丝；
在第二金属丝中形成第三球形部分，并把第三球形部分焊到第二被连接件上；以及
如此引导第二线离开第二被连接件，使得在第一线上方形成一环，并把第二线跳焊到第一被连接件上。
按照这一丝焊方法，第二金属丝可以容易地提供在第一金属丝的上方，因为由第一金属丝形成的环是低的。因而，便能够提供具有高的密度的金属丝，并可以防止第一第二金属丝相互交叉。
在另一个最佳实施例中，第一被连接件以引线架体现，第二被连接件由半导体元件体现。因而和常规方法相比，这样生产的半导体器件可以是薄的，并且可以提高其生产效率。
在本发明的另一最佳实施例中，第一被连接件和第二被连接件由半导体元件体现了，因此，按照本发明的多芯片组件可以生产的很薄，并且和常规方法相比可以提高生产效率。
还是在本发明的另一实施例中，金属线由细的金丝体现，并采用球式焊接工艺至少把第二球形部分焊到第二被连接件上。按照本发明的这一方面，便阻止了对第二被连接件的破坏。
为了实现上述目的，本发明还提供了一种半导体器件，包括：
半导体元件；
引线；以及
把半导体元件和引线相连的金属丝；
其中
使用在金属丝中形成的第一球形部分直接把引线焊到金属丝上，
形成在半导体元件中的电极通过使用在金属丝中形成的第二球形部分被直接地焊到金属丝上，以及
所述金属丝形成基本呈L形的环，并包括从金属丝焊到引线上的位置基本垂直延伸的垂直部分和从半导体元件焊到金属丝上的位置基本水平延伸的水平部分。
按照本发明的半导体器件，对于半导体元件的破坏被减少了，因为形成在半导体元件上的电极使用形成在金属丝中的第二球形部分被直接地焊在了金属丝上。借助于这样提供金属丝，使得形成大致呈L形的环，便可以减少半导体器件的高度。
为了实现上述目的，本发明还提供了一种用于在焊接工艺中把金属丝焊到被连接件的丝焊毛细管，其中所述毛细管的主体的端部包括一个突起部分。按照本发明的丝焊毛细管，从其主体突出的端部的作用是把金属丝焊到球形块上，突起的端部的周围部分的作用是压挤球块。
最好在毛细管的主体的端部形成一个用于把金属丝焊到被连接件的焊接部分，并和焊接部分相邻形成一个加压部分，用来压挤由在被连接件中的焊接部分形成的球形部分。因而，用来把金属丝焊到被连接件上的工序和焊接在被连接件上形成的球形部分的工序可以使用同一毛细管进行。因而，可以高效率地进行球块的形成工序。
为了实现上述目的，本发明还提供了一种使用如权利要求10的丝焊毛细管的球块形成方法，包括：
焊接工序，用来在金属丝中形成球形部分，并使用丝焊毛细管的端部把球形部分焊接到被连接件上。
球块形成工序，用于借助于拉丝焊毛细管离开金属丝被焊到被连接件的位置切断金属丝从而在被连接件上形成球块；以及
成形工序，借助于使丝焊毛细管端部的周边压挤球块，以便把球块的上主表面弄平。
此外，本发明提供一种使用如权利要求11所述的丝焊毛细管的球块形成方法，所述球块形成方法包括：
焊接工序，用于在金属丝中形成球形部分，并使用在丝焊毛细管中提供的焊接部分把球形部分焊接在被连接件上；
球块形成工序，用来在被连接件上形成球块，借助于拉丝焊毛细管使其离开金属丝焊到被连接件的位置而使金属丝切断来形成所述的球块；以及
成形工序，借助于使提供在丝焊毛细管中的加压部分压挤球块而把球块的上主表面弄平。
按照本发明的球块形成方法，被形成在被连接件中的球块的上主表面可以被弄平。这样，在球块和金属丝之间的焊接质量便可以提高，形成高强度的焊接。焊接工序，球块形成工序以及成形工序可以通过使用同一毛细管连续地实现。因而，按照本发明的球块形成工序具有高的效率。
本发明的其它目的和特点从下面结合附图的说明中将会看得更清楚，其中：
图1示出常规的正向焊接；
图2示出常规的反向焊接；
图3A-3C说明球式焊接；
图4A-4C说明跳焊；
图5A是一个透视图，表示金属丝如何使用球焊处理被焊到焊盘上；
图5B是表示焊接位置的顶视图；
图6A是一个透视图，表示金属丝如何使用跳焊处理被焊在内引线上；
图6B是表示焊接位置的顶视图；
图7说明常规的反向焊接中的问题；
图8说明常规的反向焊接中的问题；
图9表示第一球形部分是如何形成的；
图10表示第一球形部分是如何被焊在引线架上的；
图11表示引线如何被导向焊盘；
图12表示第二球形部分是如何形成的；
图13表示第二球形部分如何被焊到焊盘上；
图14表示第二球形部分被焊到焊盘上的状态；
图15给出由本发明的丝焊方法由金属丝形成的环和由常规的丝焊方法中金属丝形成的环之间的比较；
图16是按照本发明的半导体器件的横截面图；
图17说明本发明的丝焊方法的改型；
图18表示本发明的丝焊方法被用于多片模块的例子；
图19A是按照本发明的毛细管的正视图；
图19B是表示放大的邻近毛细管端部的部分的横截面图；
图20表示形成球块的方法，尤其表明金球的形成；
图21表示金块被焊到焊盘上的状态；
图22表示球块被形成时的状态；
图23表示用于对球块的成形处理；
图24表示被成形后的球块；
图25表示用于把金属丝焊到球块上的丝焊工序，尤其说明用于在金属丝中形成球形部分的方法；
图26说明用来把球形部分焊到引线架上的方法；
图27说明金属丝被导向球块时的状态；
图28说明金属丝正被焊接到球块上的状态；
以及
图29表示金属丝已被焊接到球块上的状态。
现在结合图9-29说明本发明的实施例。
图9-14说明按照本发明的第一实施例的丝焊方法。以下给出的说明假定这种丝焊方法被用于半导体生产工艺。不过，第一实施例的应用并不限于此。
现在参照图9说明在丝焊中使用的元件的结构。参见图9，其中半导体元件10上具有焊盘11。半导体元件10被固定在引线架12上。构成引线架12的引线22的内引线13(见图16)处在半导体元件10附近。
毛细管14和火花电极15构成丝焊装置。毛细管14和火花电极15是在常规的丝焊装置中具有的、这并不是按照第一实施例的丝焊方法的新特征。
用线16表示的细的金丝被穿过毛细管14。毛细管14可通过移动装置移动(未示出)。超声振荡器被如此连到毛细管14，使得线16和被连接件(在第一实施例的情况下为焊盘11和内引线13)借助于通过超声波振荡器产生的超声振荡的超声焊接作用被焊到一起。
火花电极15也由移动装置移动(未示出)。
现在说明按照第一实施例的丝焊方法。
如图9所示，在穿过毛细管14并从其端部伸出的金属丝16的端部形成第一球形部分17。它是利用火花电极15产生的火花放电而形成的。
当在从毛细管14的端部伸出的线16的端部已经形成第一球形部分17时，就通过移动装置把毛细管14向内引线13移动，从而使第一球形部分17压在内引线13上，如图10所示。然后驱动超声振荡器使其产生超声振荡，从而按照超声焊接工艺通过毛细管14的作用把第一球形部分17焊在内引线13上(权利要求中的第一被连接件)。这样，金属丝16就被球焊到内引线13上。上述这种丝焊叫作第一焊接工序。
当金属丝16(第一球形部分17)已被焊到内引线13上时，毛细管14被向上移动到达略高于半导体元件10的上主表面的高度，然后水平移动，使得毛细管14位于在半导体元件10的上主表面上形成的焊盘11上。当毛细管14被移动时，线16被继续送入毛细管14中。
通过如上所述使毛细管14移动，线16就形成大致呈倒L形的环，该环包括从内引线13向上垂直地延伸的部分和水平延伸的部分。
当线16被拉到焊盘11上方的位置时，火花电极15被移动到毛细管14的下方。如图12所示，通过火花放电在延伸出毛细管14外部的金属丝16中形成第二球形部分18，这一处理将被叫做球形成工序。第二球形部分18通过火花放电在被引导离开第一球形部分17的线16的中间位置形成。
接着，毛细管14被向下移动，使得第二球形部分18压在焊盘11上。与此同时，驱动超声振荡器，使其产生超声振荡。因此，如图13所示，第二球形部分18使用毛细管14被焊在焊盘11上(权利要求中的第二连接件)。这一引线焊接将被称为第二焊接工序。
当第二球形部分18已被焊在焊盘11上时，毛细管14被向上移到图14所示的位置。当毛细管14被向上移动时，金属丝16借助于夹具(未示出)被阻止通过毛细管14的下端，从而使线16随着毛细管16向上移动而在焊接位置被切断。这便完成了金属丝16的焊接处理的一个操作序列。
然后再次形成第一球形部分17，接着重复图9-13的工序。用这种方式，把线16连续地焊到焊盘11和内引线13上。
按照上述的丝焊方法，当线16被焊在焊盘11上时，在线中形成的第二球形部分18具有和在反焊中的球块16(见图2)相同的功能。第二球形部分18作为撞击吸收器，当线16被焊到焊盘11上时，用来防止损坏半导体元件10。
因为在线16中形成第二球形部分，所以除去主要的连接焊接工序外，不需附加的工序来形成球块6。这样，便可以用简单而效率高的方式进行丝焊工序。
第二球形部分18以球焊工艺被焊在焊盘11上。如图5B所示，焊接区域在顶视图中大致呈圆环形，并具有相对小的尺寸。因为球焊要求相对小的面积，所以可以对具有大量的且以高密度分布的焊盘11的半导体元件10进行丝焊。
在图12所示的用于形成第二球形部分18的工序中，线16保持和毛细管14相连。因此，在图13所示的第二焊接工序中，便可以精确地把第二球形部分18定位在焊盘11上。因此，便确保第二球形部分18被可靠地焊在焊盘11。
此外，通过使用按照第一实施例的连接焊接方法，可以保持由线16所形成的环的高度相当低。作为比较，图15示出了通过使用上述的连接焊接方法所提供的连接16以及使用常规的连接焊方法(正向焊)所提供的金属丝1的两种情况。
按照常规的正向焊接提供的金属丝1形成延伸到高于半导体元件10的上主表面的环，如图15所示。与此相反，按照第一实施例的丝焊方法使用反焊，即首先把线16焊在内引线13上，然后拉线16引导其形成大致呈倒L形的环，使其连在焊盘11上。因而，线16的环是相当低的。
虽然按照第一实施例的丝焊中线16以类似于常规的反焊的方式被提供，但按照第一实施例的丝焊的优点在于，为了形成具有和用常规反焊工序所形成的环那样低的环的金属丝16所需要的工序较少。这是因为第二球形部分18是在使用火花电极15的火花放电工序中在金属丝16中直接形成的。
图16表示按照本发明第二实施例的半导体器件20。在半导体器件20中，按照上述的丝焊方法提供金属丝16。图16所示，为把上述的丝焊方法应用于具有塑料封装的半导体器件的一个例子。
半导体器件20一般包括半导体元件10，金属丝16，密封树脂21之类。半导体元件10被固定在形成引线架的一部分的台23上。金属丝16位于形成在半导体元件10的上主表面上的焊盘11和引线22的内引线13之间，使用上述的丝焊方法将金属丝焊上。
密封树脂21对其中的半导体元件10和线16构成密封，用以保护半导体元件10和金属丝16。因为需要提供密封树脂21使其至少包住线16，所以如果由线16所形成的环越高则密封树脂21越厚，因而导致半导体器件相当大的尺寸。
然而，按照第一实施例的丝焊方法产生的由金属丝16形成的环是低的，因而由密封树脂21形成的树脂封装的厚度小，相应地，半导体器件20具有满意的小的高度。
图17表示本发明的丝焊方法的改型。图中所示为本发明的丝焊方法应用于在第一金属丝16之上提供第二金属丝24的一种金属丝连接结构的一个例子。
近来，随着半导体元件的密度不断提高，在半导体元件上提供的焊盘数也越来越多。例如，图17所示的结构是可以利用的，其中在半导体元件10上提供了两排焊盘11和25(在顶视图中，焊盘11和25通常以两条直线或排列成乙字形的方式被提供)。
在这种结构中，需要使线16从半导体元件10的焊盘11延伸并使线24从半导体元件10的焊盘25延伸。因而，需要一种金属丝连接结构，其中第一线16和第二线24以在垂直方向上分开的方式提供。
在图17所示的例子中，半导体元件10被固定在衬底27中提供的管芯连接层28上。衬底27是一种层迭结构，包括第一布线层29，第一绝缘层30，第二布线层31和第二绝缘层32，它们按从上到下的次序迭放在基底件33上。焊盘11通过第一金属丝16和第二布线层30电气相连，焊盘25通过第二金属丝24和第一布线层29相连。
在上述的结构中，使用本发明的方法提供第一金属丝16，使用常规的正向焊接工艺提供第二金属丝24。如上所述，使用本发明的连线焊接方法提供的线16所形成的环低于使用常规的正向焊接方法提供的线24所形成的环。因此，即使线24处于线16之上，线16和24也可以防止互相交叉而形成短路。
在一种类似的常规结构中，由这些金属丝形成的环的总的高度是十分高的，因为第二线必须在已经形成相当的高的环的第一线上方的某一距离处被提供。通过使用本发明的丝焊方法提供第一线16，可以限制由线16和24所形成的环的总的高度。
图18表示本发明的丝焊方法应用于多片模块的一个例子。在所示的多片模块中，包括半导体元件10和35的许多半导体元件被提供在衬底37上。
如图18所示，本发明的丝焊方法不仅可以用于把半导体元件10连到内引线13上，而且可应用于把半导体元件10以多片模块结构直接地连到半导体元件35上。本发明的丝焊方法的其它的应用包括使用一根金属丝使许多引线彼此相连。这样，本发明的丝焊方法可以应用于对连接件使用金属丝的各种结构中。
参照图2说明的反向焊接工艺通常适用于保持由金属丝5形成的环具有低的高度，如果金属丝被用跳焊焊上的焊盘2a的密度不高的话。然而，如图7、8所示，形成球块6的常规方法具有的缺点是，球块6的上主表面6a是不平的，或在其中形成一凸块6b。这一缺点限制了反向焊接工艺的实际应用。如果在形成球块6时其上主表面可以被弄平，便可以优先采用反向焊接工艺。
下面参照图19A-24给出形成球块的方法的说明，用这种方法可以把球块6的上主表面6a弄平。在图19-24中，和图9-14中相同的元件采用相同的标号，因而省略其说明。
图19A和19B表示按照本发明的第三实施例形成球块的方法中使用毛细管40。图19A是毛细管40的正视图，图19B是毛细管40的下端的放大的剖面图。
毛细管40的特征在于，在总体上呈圆柱形的毛细管主体41的下端具有一个突起。具体地说，在毛细管主体41的端部的中心处形成一突起的焊接部分42。和焊接部分42相邻的平的表面构成加压部分43。穿过金属丝16的插入孔44被形成在毛细管40的中心处。
按下述方法用焊接部分42把球形部分50焊在焊盘11上。加压部分43被用来使在焊盘11中形成的球块51成形，如下所述。
参见图19A和19B，毛细管40的尺寸如下，例如：.L1＝9.525[mm]，L2＝1.588[mm]，L3＝0.15-0.25[mm]，L4＝0.2-0.4[mm]，L5＝0.2-0.3[mm]。毛细管40的形状不限于图19A和19B所示的这种。
具有上述结构的毛细管40是常规毛细管7(见图3A-4C)的一种简单的变形，其中只改变了毛细管40的端部。焊接部分42和加压部分43可以通过对毛细管40进行机加工而容易地形成(例如用切削工艺)。因此，提供焊接部分42和加压部分43并不会使生产毛细管40的费用增加。
现在参照图20-24给出使用毛细管40来形成球块的方法的说明。虽然图20-24所示的毛细管40的形状和图19A和19B所示的不同，但其本质是完全相同的。
当金属丝16被穿过毛细管40时，在焊盘11上这样形成球块51，即首先在焊接部分42的端部向下伸出的金属丝16的部分中形成球形部分50。具体地说，类似于图9所示的工艺使用火花电报通过火花放电形成球形部分50。
当在从焊接部分42伸出的金属丝16的端部形成球形部分50时，用移动装置使毛细管40降低，从而接近焊盘11。如图21的示，形成在毛细管40中的焊接部分42使球形部分50挤压焊盘11。
接着，通过超声波振荡器产生超声振荡，从而在形成在毛细管40中的焊接部分42的作用下把球形部分50焊到焊盘11上(权利要求中所述的被连接件)。结果，球形部分50用球焊方式被焊到焊盘11上。丝焊工艺的这一部分将被称为焊接工序。
当球形部分50被焊到焊盘11上时，毛细管40被升高。因为有一夹具(未示出)阻止金属丝16被进给，所以在线16在球形部分50的上方位置被切断。如图22所示，这样便形成了球块51。这一部分焊接处理将被称为球块形成工序。
在球块形成工序之后，球块51的上主表面是高低不平的，因此，正如已经说明的，在此阶段不能使用球块51进行反向焊接处理。
按照第三实施例，在球块形成处理之后球块51被整形。
在整形工序中，如图23所示，毛细管40被水平移动到在其上形成的加压部分43正好对准球块51的位置。
使用毛细管40提供在焊盘11和内引线13之间的线16。因此，毛细管40的结构是可以沿水平和垂直方向移动的。所以上述移动毛细管40的处理不需丝焊装置的任何附加的机构。
当加压部分43刚好对着球块51时，毛细管40被降低。如图23所示，加压部分43挤压球块51。
因为加压部分43具有平的表面，所以球块51的高低不平的上主表面通过加压部分43提供的压力被弄平，此时球块形成工序完成。在这一工序之后，毛细管40再被升高，使得加压部分43和球块51分离。结果，如图24所示，便形成了具有被弄平的上主表面的球块51。这部分丝焊工序被称为整形工序。
如上所述，按照第三实施例的球块形成工序，球块51的上主表面51a可通过使用毛细管40的加压部分43对球块51的上表面51a进行加压和整形而弄平。显然，在以后的反向焊接工序中，和常规技术相比，球块51和金属丝16被焊接得更为牢固。
通过使用图19A、19B所示的在其端部形成有焊接部分42和加压部分43的毛细管40，焊接工序，球块形成工序以及整形工序可以连续地进行。因而，形成球块51的工艺可以提高生产率。
现在参照图25-29说明在形成在焊盘11上的球块51和内引线13之间进行反向焊接的方法。在图25-29中，和图9-14中相同的部分用相同的符号表示，因而省略其说明。
为了使用金属丝16连接球块51(焊盘11)和内引线13，如图25所示，在从毛细管40的焊接部分42伸出的金属丝16的部分形成球形部分17。球形部分17通过火花电极15进行火花放电而形成。
当在金属丝16的端部形成球形部分15时，毛细管40被移动装置移到到达内引线13的位置。如图26所示，毛细管40对着内引线13挤压球形部分17。接着，超声振荡器产生超声振荡，从而使焊接部分42把球形部分17焊在内引线13上(使用球焊工艺的第一焊接)。
当线16(球形部17)被焊到内引线13上时，毛细管40被向上垂直移动到略高于半导体元件10的上主表面的位置，然后被水平移动，使得毛细管40处于球块51的上方。这一移动的结果，使得金属丝16形成大致呈L形的环，包括从内引线向上垂直伸出的垂直部分和水平延伸的水平部分，如图27所示。
当线16通过被拉到球块51的上方位置而被引导时，毛细管40被降低，从而使焊接部分42向着球块51挤压金属丝16，并且超声振荡器产生超声振荡。这样，如图28所示，焊接部分42使金属丝16用超声焊接工艺焊在球块51上(使用跳焊的第二焊接)。
因为球块51的上主表面51a是平的，所以确保金属丝16被牢固地焊在球块51上。按照上述的丝焊工序和常规技术相比具有相当的改进。
当金属丝16被焊到球块51(焊盘11)上时，毛细管40被升高，从而形成图29所示的状态。当毛细管正在被上升时，一个夹具(未示出)阻止金属丝16被继续进给，从而使金属丝16在毛细管40的向上移动期间在焊接位置被切断。这便完成了对金属丝16的一系列的反向焊接工序。
此后，球形部分17再次被形成，如图25所示。然后，重复上述的图25-29所示的工序。用这种方式，便连续地进行丝焊工序，在每对球块51和内引线13之间提供金属丝16。
可以看出，在上述的工序中，在球块形成工序中使用的毛细管40也在反向焊接工序中被使用，因此，可以用连续的方式形成球块51和金属丝16，结果提高了进行整个丝焊工序的效率。因为丝焊装置被用于形成球块和实现反向焊接，所以整套焊接系统可以具有简单的结构。
本发明并不限于上述的实施例，不脱离本发明的构思可以做出各种改变和改型。

Claims (13)

1.一种丝焊方法，其特征是包括：
第一焊接工序，在金属丝中形成第一球形部分并把所述第一球形部分焊到第一被连接件上；
球形部分形成工序，将所述金属丝自所述第一被连接件引出使得形成一预定的环状并在所述金属丝的预定位置上形成第二球形部分；以及
第二焊接工序，把所述第二球形部分焊到第二被连接件上。
2.如权利要求1所述的丝焊方法，其特征为，在所述球形部分形成工序中，所述第二球形部分的形成在所述金属丝为未被切断时进行的。
3.如权利要求1所述的丝焊方法，其特征为至少所述第二球形部分利用火花放电形成。
4.如权利要求1所述的丝焊方法，其特征为所述金属丝所述第一球形部分被焊到所述第一被连接件上之后被基本上垂直地向上引导；然后所述金属丝被水平地引导，从而基本上形成直角，随后，所述第二球形部分被形成，并被焊到第二被连接件上。
5.一种丝焊方法，其特征在于包括下列步骤：
按照权利要求1所述的丝焊方法提供第一金属丝；
在第二金属丝上形成第三球形部分，并把所述第三球形部分焊到第二被连接件上；以及
如此引导所述第二金属丝离开所述第二被连接件，使得在所述第一金属丝的上方形成一个环状，并用跳焊法把所述第二金属丝焊在第一被连接件上。
6.如权利要求1所述的丝焊方法，其特征为所述第一被连接件具体为引线架，所述第二被连接件具体为半导体元件。
7.如权利要求1所述的丝焊方法，其特征为所述第一被连接件和所述第二被连接件具体为半导体。
8.如权利要求1所述的丝焊方法，其特征为所述金属丝具体为细的金丝，并且采用球焊工艺至少把所述第二球形部分焊在所述第二被连接件上。
9.一件半导体器件，包括：
半导体元件；
引线；以及
连接所述半导体元件和所述引线的金属丝；
其特征在于，
所述引线，使用在所述金属丝上形成的第一球形部分被直接地与所述金属丝焊接，
所述半导体元件中形成的电极使用在所述金属丝中形成的第二球形部分被直接与所述金属丝焊接，以及
所述金属丝形成基本上呈L形的环，包括从所述金属丝被焊到所述引线上的位置基本上垂直延伸的垂直部分以及从所述从半导体元件被焊于所述金属丝的位置水平延伸的水平部分。
10.一种丝焊毛细管使用在把金属丝焊到被连接件的焊接工艺中，其特征在于在毛细管的主体的一端包括一个突起部分。
11.如权利要求10所述的金属丝焊接毛细管，其特征在于在毛细管的主体的一端形成一个用来把所述金属丝焊到所述被连接件上的焊接部分，以及与所述焊接部分相邻形成一个加压部分，用来将所述焊接部分形成的球形部分压到所述被连接件上。
12.一种使用如权利要求10所述的金属丝焊接毛细管的球块形成方法，所述球块形成方法其特征包括：
焊接工序，用来在金属丝中形成球形部分，并使用所述丝焊毛细管的端部把所述球形部分焊到被连接件上；
球块形成工序，用于通过拉所述金属丝焊接毛细管使其离开所述金属丝焊到所述被连接件上的位置而切断所述金属丝从而在所述被连接件上形成一个球块；以及
成形工序，用来通过使所述丝焊毛细管端部的周边部分挤压所述球块而使所述球块的上主表面变平。
13.一种使用如权利要求11所述的丝焊毛细管的球块形成方法，所述球块形成方法其特征包括：
焊接工序，用来在金属丝中形成球形部分并将所述球形部分使用在所述丝焊毛细管中提供的焊接部分焊到被连接件上；
球块形成工序，用来借助于拉所述丝焊毛细管使其离开所述金属丝被焊到所述被连接件上的位置而把所述金属丝切断从而在所述被连接件上形成球块；以及
成形工序，用来借助于使在所述丝焊毛细管中提供的加压部分挤压所述球块来把所述球块的上主表面弄平。
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CN1079167C (zh) 2002-02-13

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