CN1128449C - 半导体存储装置 - Google Patents

半导体存储装置 Download PDF

Info

Publication number
CN1128449C
CN1128449C CN97102207A CN97102207A CN1128449C CN 1128449 C CN1128449 C CN 1128449C CN 97102207 A CN97102207 A CN 97102207A CN 97102207 A CN97102207 A CN 97102207A CN 1128449 C CN1128449 C CN 1128449C
Authority
CN
China
Prior art keywords
signal
mentioned
bit line
write
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN97102207A
Other languages
English (en)
Chinese (zh)
Other versions
CN1164742A (zh
Inventor
中濑泰伸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1164742A publication Critical patent/CN1164742A/zh
Application granted granted Critical
Publication of CN1128449C publication Critical patent/CN1128449C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1075—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for multiport memories each having random access ports and serial ports, e.g. video RAM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1057—Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Multimedia (AREA)
  • Static Random-Access Memory (AREA)
CN97102207A 1996-05-08 1997-01-10 半导体存储装置 Expired - Fee Related CN1128449C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP113592/1996 1996-05-08
JP11359296A JP3892078B2 (ja) 1996-05-08 1996-05-08 半導体記憶装置
JP113592/96 1996-05-08

Publications (2)

Publication Number Publication Date
CN1164742A CN1164742A (zh) 1997-11-12
CN1128449C true CN1128449C (zh) 2003-11-19

Family

ID=14616125

Family Applications (1)

Application Number Title Priority Date Filing Date
CN97102207A Expired - Fee Related CN1128449C (zh) 1996-05-08 1997-01-10 半导体存储装置

Country Status (6)

Country Link
US (1) US5774410A (https=)
JP (1) JP3892078B2 (https=)
KR (1) KR100236886B1 (https=)
CN (1) CN1128449C (https=)
DE (1) DE19651340C2 (https=)
TW (1) TW311278B (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1153886A (ja) * 1997-08-05 1999-02-26 Oki Micro Design Miyazaki:Kk 半導体記憶装置
FR2839830A1 (fr) * 2002-05-17 2003-11-21 Koninkl Philips Electronics Nv Memoire pour decodeur turbo
DE10345549B3 (de) * 2003-09-30 2005-04-28 Infineon Technologies Ag Integrierte Speicherschaltung
JP5038657B2 (ja) * 2006-06-26 2012-10-03 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US8638276B2 (en) * 2008-07-10 2014-01-28 Samsung Display Co., Ltd. Organic light emitting display and method for driving the same
JP5310439B2 (ja) * 2009-09-18 2013-10-09 ソニー株式会社 半導体メモリデバイスおよびチップ積層型の半導体デバイス
US11361819B2 (en) * 2017-12-14 2022-06-14 Advanced Micro Devices, Inc. Staged bitline precharge
CN110912552B (zh) * 2018-09-14 2023-12-08 铠侠股份有限公司 数据锁存电路以及半导体存储装置
US10867641B2 (en) 2018-09-14 2020-12-15 Toshiba Memory Corporation Data latch circuit and semiconductor memory device
US11615837B2 (en) * 2020-09-22 2023-03-28 Qualcomm Incorporated Pseudo-triple-port SRAM datapaths
FR3146542A1 (fr) * 2023-03-07 2024-09-13 Stmicroelectronics International N.V. Dispositif mémoire

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5166375A (https=) * 1974-08-14 1976-06-08 Saint Gobain
JPS60111394A (ja) * 1983-11-22 1985-06-17 Toshiba Corp メモリセル
EP0473819A1 (en) * 1990-09-05 1992-03-11 International Business Machines Corporation Multiport memory cell

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5289432A (en) * 1991-04-24 1994-02-22 International Business Machines Corporation Dual-port static random access memory cell
JP3606951B2 (ja) * 1995-06-26 2005-01-05 株式会社ルネサステクノロジ 半導体記憶装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5166375A (https=) * 1974-08-14 1976-06-08 Saint Gobain
JPS60111394A (ja) * 1983-11-22 1985-06-17 Toshiba Corp メモリセル
EP0473819A1 (en) * 1990-09-05 1992-03-11 International Business Machines Corporation Multiport memory cell

Also Published As

Publication number Publication date
KR970076807A (ko) 1997-12-12
KR100236886B1 (ko) 2000-01-15
JPH09297994A (ja) 1997-11-18
US5774410A (en) 1998-06-30
CN1164742A (zh) 1997-11-12
TW311278B (en) 1997-07-21
DE19651340C2 (de) 2000-02-03
JP3892078B2 (ja) 2007-03-14
DE19651340A1 (de) 1997-11-13

Similar Documents

Publication Publication Date Title
CN1153221C (zh) 可以减少备用时耗电的同步式半导体存储器
CN1130729C (zh) 多存储体同步型半导体存储装置
CN1187825C (zh) 具有较短数据传送时延的半导体存储器件
CN1153219C (zh) 半导体存储装置
CN1107958C (zh) 有能将测试方式可靠复位的电路的同步型半导体存储装置
CN1134018C (zh) 其自动预充电操作易于控制的同步半导体存储器
CN1128449C (zh) 半导体存储装置
CN1225697C (zh) 半导体存储器
CN1209629A (zh) 多存储体同步型半导体存储装置
CN1162182A (zh) 减少其输入缓冲电路所消耗的电流的同步型半导体存储器
CN1506975A (zh) 带有含双寄存器的页面缓冲器的存储器件及其使用方法
CN1263041C (zh) 并行处理数据读出与写入的薄膜磁性体存储器
CN1416574A (zh) 半导体存储器件
CN1495798A (zh) 适合于超高速缓冲存储器的非易失性存储器
CN1881804A (zh) 用于在fpga设备中提供配置数据的电路布置
CN1197087C (zh) 同步型半导体存储器
CN1701387A (zh) 半导体存储器设备
CN1518742A (zh) 带位线预先充电、反转数据写入、保存数据输出的低功耗动态随机存取存储器
CN100347787C (zh) 具有测试模式的半导体存储器及应用它的存储系统
CN1264219C (zh) 同步型半导体存储装置
CN1220215C (zh) 可兼顾两种列地址选通等待时间的工作的半导体存储器
CN1450558A (zh) 半导体器件的控制方法以及半导体器件
CN1101587C (zh) 包含地址转移检测电路的半导体存储器件
CN1377040A (zh) 半导体存储器装置及信息处理系统
CN1255814C (zh) 一种带有高效信息交换电路的半导体设备

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20031119

Termination date: 20110110