CN112703594A - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
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- CN112703594A CN112703594A CN201980059614.8A CN201980059614A CN112703594A CN 112703594 A CN112703594 A CN 112703594A CN 201980059614 A CN201980059614 A CN 201980059614A CN 112703594 A CN112703594 A CN 112703594A
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Abstract
半导体装置具备半导体元件、第一导线、第二导线和封装树脂。半导体元件具备第一电极和第二电极。第一导线具有搭载部和第一端子,该搭载部具有供第一电极接合的搭载部主面和搭载部背面,该第一端子与第一电极导通。第二导线具有与第二电极导通的第二端子。封装树脂具备:彼此朝向相反侧的树脂主面和树脂背面、以及朝向各端子突出的方向的树脂端面。搭载部背面从树脂背面露出。封装树脂在树脂背面侧具备背面槽部,该背面槽部在第二端子和树脂端面的边界与搭载部背面之间,从树脂背面凹陷。
Description
技术领域
本发明涉及一种半导体装置。
背景技术
以往提出有各种结构的半导体装置的方案。例如专利文献1公开了一例现有的半导体装置。该文献公开的半导体装置具备:半导体元件、裸片焊垫(表面有Ni镀膜)、多个导线(漏极导线、源极导线、栅极导线)和封装树脂。在半导体元件的主面形成有源极电极和栅极电极,且在背面形成有漏极电极。半导体元件以漏极电极与裸片焊垫导通的状态搭载于该裸片焊垫的主面。漏极导线与裸片焊垫一体形成并与漏极电极导通。源极导线和栅极导线分别经由引线与源极电极和栅极电极连接。封装树脂将各导线的一部分和半导体元件覆盖。裸片焊垫的背面从封装树脂露出。
在具有上述结构的半导体装置中,如果向漏极导线与源极导线之间施加高电压(例如数千V),则会在封装树脂的表面并且是在裸片焊垫的露出背面与源极导线之间引起放电,漏极导线与源极导线有可能短路。因此,现有的半导体装置在实现高耐电压化的方面尚有改善余地。
现有技术文献
专利文献
专利文献1:日本特开2014-179541号公报
发明内容
发明所要解决的课题
基于上述情况,本发明的课题在于,提供一种能够实现高耐电压化的半导体装置。
用于解决课题的方案
本发明提供的半导体装置具备:半导体元件、第一导线、第二导线和封装树脂。上述半导体元件具有:在厚度方向上彼此朝向相反侧的元件主面和元件背面、配置在上述元件背面的第一电极、以及配置在上述元件主面的第二电极。上述第一导线具有搭载部和经由上述搭载部与上述第一电极导通的第一端子,该搭载部具有:供上述半导体元件的上述第一电极接合的搭载部主面;以及在上述厚度方向上朝向与上述搭载部主面的相反侧的搭载部背面。上述第二导线具有与上述第二电极导通的第二端子。上述封装树脂将上述第一导线及上述第二导线各自的一部分和上述半导体元件覆盖。上述第一端子和上述第二端子从上述封装树脂突出。上述封装树脂具备:在上述厚度方向上彼此朝向相反侧的树脂主面和树脂背面;将上述树脂主面和上述树脂背面连接并且朝向上述第一端子和上述第二端子突出的方向的树脂端面;以及将上述树脂主面和上述树脂背面连接并且与上述树脂端面相连的一对树脂侧面。上述搭载部背面从上述树脂背面露出。上述封装树脂在上述树脂背面侧具备背面位移部,该背面位移部在上述第二端子和上述树脂端面的边界与上述搭载部背面之间,具有在上述厚度方向上从上述树脂背面远离的部分。
发明的效果
在上述半导体装置中,上述封装树脂在上述树脂背面侧具备背面位移部,该背面位移部在上述第二端子和上述树脂端面的边界与上述搭载部背面之间,具有在上述厚度方向上从上述树脂背面远离的部分。由此,能够使将上述第二端子的从上述封装树脂露出的部分和上述搭载部背面沿着上述封装树脂的表面连结的距离即沿面距离延长。该沿面距离越长,就越能够提高耐电压。因此,本发明的半导体装置能够实现高耐电压化。
本发明的其它特征和优点可以通过参照附图进行的以下详细说明而更加清楚。
附图说明
图1是表示第一实施方式的半导体装置的立体图。
图2是表示图1所示半导体装置的相反侧的立体图。
图3是图1所示半导体装置的俯视图。
图4是图1所示半导体装置的俯视图且透过了封装树脂。
图5是图1所示半导体装置的仰视图。
图6是图1所示半导体装置的右侧视图。
图7是沿着图3的VII-VII线的剖视图。
图8是沿着图3的VIII-VIII线的剖视图。
图9是表示第二实施方式的半导体装置的仰视图。
图10是表示第三实施方式的半导体装置的右侧视图。
图11是表示第四实施方式的半导体装置的仰视图。
图12是表示第五实施方式的半导体装置的右侧视图。
图13是表示第六实施方式的半导体装置的仰视图。
图14是表示第七实施方式的半导体装置的仰视图。
图15是表示第八实施方式的半导体装置的俯视图且透过了封装树脂。
图16是表示第八实施方式的半导体装置的仰视图。
图17是表示第八实施方式的半导体装置的变形例的仰视图。
图18是表示第九实施方式的半导体装置的俯视图且透过了封装树脂。
图19是表示第九实施方式的半导体装置的仰视图。
图20是表示第九实施方式的半导体装置的变形例的仰视图。
图21是表示第十实施方式的半导体装置的仰视图。
具体实施方式
以下参照附图对本发明的优选实施方式具体地进行说明。首先,基于图1~图8对本发明第一实施方式的半导体装置A1进行说明。如图4所示,半导体装置A1具备:多个导线、半导体元件5、键合引线71、和封装树脂8。在本实施方式中,多个导线是两个导线即第一导线1和第二导线2,但是本发明不限于此。导线的个数例如根据半导体元件5的种类(具体而言,例如是根据电极数)来确定,个数也可以为三个或四个,或者是五个以上。
图1是表示半导体装置A1的立体图。图2是表示半导体装置A1的立体图且示出了底面侧。图3是表示半导体装置A1的俯视图。图4是表示半导体装置A1的俯视图,且为了便于理解而透过了封装树脂8(参照双点划线)。图5是表示半导体装置A1的仰视图。图6是表示半导体装置A1的右侧视图。图7是沿着图3的VII-VII线的剖视图。图8是沿着图3的VIII-VIII线的剖视图。
半导体装置A1例如是在构成电子设备的电路基板上安装的装置,但是本发明不限于此。为了便于说明而参照彼此正交的三个方向即x方向、y方向和z方向。z方向对应于半导体装置A1的厚度方向。y方向对应于半导体装置A1的各端子(120、220)延伸的方向。封装树脂8的z方向视角下的形状大致为矩形状。半导体装置A1的尺寸不限于此。作为一例,在本实施方式中,封装树脂8的x方向尺寸为15mm左右、y方向尺寸为20mm左右、z方向尺寸为5mm左右。从封装树脂8突出的各端子的长度为20mm左右。
第一导线1和第二导线2与半导体元件5导通,且当半导体装置A1安装于电路基板时,构成了半导体元件5与电路配线的导通路径。第一导线1和第二导线2例如通过对金属板实施冲裁加工、折弯加工等而形成。导线1~3由金属制成,优选为Cu和Ni的任一,或者是由它们的合金或42合金等制成。在本实施方式中,对于第一导线1和第二导线2由Cu制成的例子进行说明。在本实施方式中,第一导线1和第二导线2的厚度例如为0.5~1mm左右。
第一导线1对半导体元件5进行支撑,并且与半导体元件5导通。第一导线1具备:搭载部110、第一端子120、和连结部130。
搭载部110是搭载半导体元件5的部分,且在z方向视角下大致呈矩形状。搭载部110具有搭载部主面111和搭载部背面112。搭载部主面111和搭载部背面112在z方向上彼此朝向相反侧。搭载部主面111是朝向图6~图8的左侧的面。搭载部主面111是搭载半导体元件5的面。搭载部背面112是朝向图6~图8的右侧的面。搭载部背面112从封装树脂8露出而成为背面端子。另外,搭载部110具有搭载部贯通孔113,该搭载部贯通孔113从搭载部主面111起到搭载部背面112为止,与z方向平行地贯通。搭载部贯通孔113在搭载部110的x方向中央并且靠近y方向的一端(在图4中为靠近上侧)配置,且在z方向视角下呈圆形状。搭载部贯通孔113的位置和形状不限于图示例。
第一端子120在y方向上延伸且一部分从封装树脂8露出。第一端子120经由连结部130和搭载部110与半导体元件5导通。
连结部130与搭载部110和第一端子120相连,将搭载部110与第一端子120连结。如图8所示,搭载部110和第一端子120在z方向上的位置不同,第一端子120比搭载部110靠向图8中的左侧。因此,连结部130相对于搭载部110和第一端子120倾斜。就搭载部主面111、和第一端子120的与搭载部主面111相同侧的面而言,如果该两方的z方向的位置相同,则连结部130不必倾斜。连结部130整体被封装树脂8覆盖。
第一端子120和连结部130的厚度(z方向的尺寸)相同,且比搭载部110的厚度薄。第一端子120和连结部130例如通过半蚀刻处理而形成。搭载部110的厚度也可以与第一端子120和连结部130的厚度相同。如图4所示,连结部130和第一端子120在搭载部110的y方向下侧靠近x方向左侧配置。如图4所示,在本实施方式中,就使第一端子120的中心线在y方向上延长而得到的虚拟线C1(单点划线)而言,不与半导体元件5和搭载部贯通孔113交叉。第一端子120在x方向上的位置不限于图示例。
第二导线2与半导体元件5导通。第二导线2与第一导线1远离配置,如图4所示,在第一导线1的搭载部110的y方向下侧靠近x方向右侧配置。第二导线2具备引线键合部210和第二端子220。
引线键合部210是对键合引线71进行键合的部分,在z方向视角下呈在x方向上较长的矩形状。如图7所示,引线键合部210具有引线键合部主面211和引线键合部背面212。引线键合部主面211和引线键合部背面212在z方向上彼此朝向相反侧。引线键合部主面211是朝向图6~图8的左侧的面。引线键合部主面211是对键合引线71进行键合的面(参照图4)。引线键合部背面212是朝向图6~图8的右侧的面。引线键合部210整体被封装树脂8覆盖。
第二端子220与引线键合部210相连,并在y方向上延伸且一部分从封装树脂8露出。第二端子220经由引线键合部210和键合引线71而与半导体元件5导通。
引线键合部210和第二端子220的厚度(z方向的尺寸)相同,且与第一导线1的第一端子120和连结部130的厚度相同。第一端子120的从封装树脂8露出的部分、与第二端子220的从封装树脂8露出的部分是相同的形状,并且第一端子120的前端(与连结部130相连的部分的相反侧的端部)、与第二端子220的前端(与引线键合部210相连的部分的相反侧的端部)在y方向上处于相同的位置。如图4所示,在本实施方式中,就使第二端子220的中心线在y方向上延长而得到的虚拟线C2(单点划线)而言,不与半导体元件5和搭载部贯通孔113交叉。第二端子220在x方向上的位置不限于图示例。优选第一端子120和第二端子220在x方向上远离。
半导体元件5是发挥半导体装置A1的电气功能的要素。在本实施方式中,半导体元件5是二极管。半导体元件5具备:元件主体50、元件主面51、元件背面52、第一电极53和第二电极54。
如图8所示,元件主面51和元件背面52在z方向上彼此朝向相反侧。元件主面51是朝向图6~图8的左侧的面。元件背面52是朝向图6~图8的右侧的面。第一电极53配置于元件背面52。第二电极54配置于元件主面51。在本实施方式中,第一电极53是负极电极,第二电极54是正极电极。
如图4所示,半导体元件5搭载于搭载部主面111的x方向中央,并且是搭载于在z方向视角下不与搭载部贯通孔113相交的位置。如图8所示,半导体元件5以元件背面52朝向搭载部主面111的方式,经由导电性的接合材料59搭载于搭载部主面111。由此,半导体元件5的第一电极53通过接合材料59与搭载部主面111接合,并与第一导线1电连接。作为接合材料59,例如可以举出TiNiAg类焊料、SnAgCu类焊料、使用烧结Ag形成的导电性接合材料等。如图4所示,键合引线71与半导体元件5的第二电极54、第二导线2的引线键合部210连接。由此,半导体元件5的第二电极54与第二导线2电连接。键合引线71的材质没有特别限定,在本实施方式中,例如采用由Al制成的引线。另外,键合引线71的数量没有限定。与第一电极53导通的第一导线1的第一端子120作为半导体装置A1的负极端子发挥功能,与第二电极54导通的第二导线2的第二端子220作为半导体装置A1的正极端子发挥功能。
封装树脂8将第一导线1和第二导线2各自的一部分、半导体元件5、键合引线71覆盖。封装树脂8由例如黒色的环氧树脂构成。
封装树脂8具有:树脂主面81、树脂背面82、树脂侧面83、和树脂端面84。树脂主面81和树脂背面82在z方向上彼此朝向相反侧。树脂主面81是朝向图6~图8的左侧的面,树脂背面82是朝向图6~图8的右侧的面。如图2、图5、图7和图8所示,第一导线1的搭载部背面112整体地从树脂背面82露出,树脂背面82与搭载部背面112彼此表面一致。
树脂侧面83是将树脂主面81和树脂背面82连接的面,且为朝向x方向的一对面。一对树脂侧面83彼此朝向相反侧。各树脂侧面83具备第一侧面831和第二侧面832。如图1和图2所示,各第一侧面831与树脂主面81相连,且以随着朝向树脂主面81而彼此接近的方式倾斜。各第二侧面832与树脂背面82相连,且以随着朝向树脂背面82而彼此接近的方式倾斜。在本实施方式中,第一侧面831与第二侧面832的边界靠近树脂背面82。
树脂端面84是将树脂主面81和树脂背面82连接的面,且为朝向第一端子120和第二端子220突出的方向的面(在图3中为朝向y方向下侧的面)。树脂端面84与一对树脂侧面83分别相连。树脂端面84具备第一端面841和第二端面842。如图1、图2和图6所示,树脂端面84的第一端面841与树脂主面81相连,且以随着朝向树脂主面81而接近封装树脂8的中心的方式倾斜。另外,第二端面842与树脂背面82相连,且以随着朝向树脂背面82而接近封装树脂8的中心的方式倾斜。即,在封装树脂8中,被一对第一侧面831和第一端面841包围的部分呈xy平面上的截面积随着朝向树脂主面81而减小的锥形状,且被一对第二侧面832和第二端面842包围的部分呈xy平面上的截面积随着朝向树脂背面82而减小的锥形状。
在本实施方式中,封装树脂8具备:树脂贯通孔891、侧面凹部892、端面凸部85、86和背面槽部87。
树脂贯通孔891是从树脂主面81起到树脂背面82为止与z方向平行地贯通的贯通孔。树脂贯通孔891在封装树脂8的x方向中央并且靠近y方向的一方端(在图3中为靠近上侧)配置,且在z方向视角下呈圆形状。在本实施方式中,树脂贯通孔891的中心与搭载部贯通孔113的中心相同。树脂贯通孔891的直径比搭载部贯通孔113的直径小。因此,如图2和图5所示,树脂贯通孔891位于搭载部贯通孔113的内侧,树脂贯通孔891的孔壁全部由封装树脂8形成。即,搭载部110不从树脂贯通孔891的孔壁露出。树脂贯通孔891用于插通螺丝等紧固部件,从而在半导体装置A1上安装散热部件等用途。搭载部背面112经由电绝缘片等与散热部件连接,从而使从半导体元件5产生的热量经由搭载部110和散热部件放出。
侧面凹部892是从树脂侧面83的第一侧面831和树脂主面81凹陷的凹部,且在各第一侧面831上分别形成。在本实施方式中,各侧面凹部892在z方向视角下呈半圆形状,且形成为夹持树脂贯通孔891。如图1和图3所示,第一导线1的搭载部主面111的一部分通过侧面凹部892从封装树脂8露出。如图6和图7所示,各侧面凹部892呈xy平面上的截面积随着朝向树脂主面81而增大的形状。侧面凹部892的形状和配置位置不限于图示例。
端面凸部85、86是从树脂端面84沿着y方向突出的部位,且大致呈长方体形状。端面凸部85、86的形状没有特别限定,例如也可以是圆柱形状等。端面凸部85和端面凸部86在x方向上彼此远离地配置。第一导线1的第一端子120从端面凸部85突出,第二导线2的第二端子220从端面凸部86突出。端面凸部86是本发明的“端面凸部”的一例,端面凸部85是本发明的“第二端面凸部”的一例。
背面槽部87是以从树脂背面82凹陷的方式形成且沿着x方向延伸的槽,且yz平面上的截面呈四边形状。与第一侧面831或者第二侧面832平行的截面也呈四边形状。如图2、图5和图6所示,背面槽部87具备槽部底面871和一对槽部侧面872。槽部底面871是与树脂背面82平行的面,且比树脂背面82靠向树脂主面81侧。一对槽部侧面872是分别与槽部底面871和树脂背面82相连且彼此相对的面。背面槽部87呈xy平面上的截面积随着朝向树脂背面82而增大的形状。一对槽部侧面872分别相对于xz平面倾斜3~5°左右。槽部侧面872的倾斜程度不限于图示例,也可以不倾斜。背面槽部87的深度(z方向的尺寸)例如为1mm左右,背面槽部87的宽度(y方向的尺寸)例如为1mm左右。
背面槽部87在z方向视角下配置于树脂背面82的y方向的一端缘(在图5中为下方端缘)与搭载部背面112之间。背面槽部87的一端延伸至第二端子220侧的树脂侧面83,且开口于该树脂侧面83。背面槽部87的另一端延伸至树脂背面82的x方向中央附近。在图示例中,背面槽部87沿着x方向呈较长状,但是结束于第一导线1的近前。在本实施方式中,背面槽部87配置于第二端子220和树脂端面84的边界、与搭载部背面112之间。背面槽部87在z方向视角下不与第一导线1重叠。背面槽部87具有z方向的位置从树脂背面82向树脂主面81侧远离的槽部底面871。背面槽部87是本发明的“背面位移部”的一例。
接下来对于半导体装置A1的作用效果进行说明。
根据本实施方式,封装树脂8具备从树脂背面82凹陷的背面槽部87。由此,能够使第二端子220的从封装树脂8露出的部分与搭载部背面112之间的沿面距离(沿着封装树脂8的表面测量的距离)比没有背面槽部87时长。该沿面距离越长,就越能够提高第二端子220与搭载部背面112之间的耐电压。因此,半导体装置A1能够实现高耐电压化。
根据本实施方式,封装树脂8具备从树脂端面84突出的端面凸部86,第二端子220从端面凸部86突出。由此,能够使第二端子220的从封装树脂8露出的部分与搭载部背面112的沿面距离,延长端面凸部86的y方向的尺寸。因此,能够进一步提高第二端子220与搭载部背面112之间的耐电压。另外,端面凸部86也能够使第一端子120与第二端子220的沿面距离延长。由此,能够提高第一端子120与第二端子220之间的耐电压。此外,根据本实施方式,封装树脂8具备从树脂端面84突出的端面凸部85,第一端子120从端面凸部85突出。由此,能够使第一端子120与第二端子220的沿面距离,进一步延长端面凸部85的y方向的尺寸。因此,能够进一步提高第一端子120与第二端子220之间的耐电压。
基于图9对第二实施方式的半导体装置A2进行说明。在图9中,对于和上述的半导体装置A1相同或者类似的要素标记相同的符号而省略重复说明。图9是表示半导体装置A2的仰视图,且对应于第一实施方式的半导体装置A1的图5。
半导体装置A2与半导体装置A1区别在于背面槽部87的形状。在本实施方式中,背面槽部87的x方向的尺寸较小。背面槽部87的一端未延伸至第二端子220侧的树脂侧面83,背面槽部87未开口于该树脂侧面83。背面槽部87的另一端未延伸至树脂背面82的x方向中央附近,且与第一实施方式相比,仅延伸至靠近第二端子220侧的树脂侧面83的位置。背面槽部87以如下方式形成,即:使得从第二端子220绕过背面槽部87而到达搭载部背面112的(在图9中以虚线表示的)沿面距离,比横跨背面槽部87时(在图9中为单点划线所示)的沿面距离长。
在本实施方式中,能够使第二端子220的从封装树脂8露出的部分、与搭载部背面112的沿面距离延长。因此,在本实施方式中,也能够获得与第一实施方式相同的效果。此外,即使在从第二端子220绕过背面槽部87而到达搭载部背面112的沿面距离比横跨背面槽部87时的沿面距离短的情况下,与未形成背面槽部87时相比,也能够使第二端子220的从封装树脂8露出的部分、与搭载部背面112的沿面距离延长。因此,即使在这种情况下,背面槽部87也有助于半导体装置A2的高耐电压化。
基于图10对第三实施方式的半导体装置A3进行说明。在图10中,对于和上述的半导体装置A1相同或者类似的要素标记相同的符号而省略重复说明。图10是表示半导体装置A3的右侧视图,且对应于第一实施方式的半导体装置A1的图6。
半导体装置A3与半导体装置A1的区别在于背面槽部87的形状。在本实施方式中,背面槽部87在yz平面上的截面呈三角形状。在本实施方式中,也能够使第二端子220的从封装树脂8露出的部分、与搭载部背面112的沿面距离延长。因此,在本实施方式中,也能够获得与第一实施方式相同的效果。背面槽部87在yz平面上的截面形状不限于图示例,也可以是其它形状。例如可以是半圆形状。
基于图11对本发明第四实施方式的半导体装置A4进行说明。在图11中,对于和上述的半导体装置A1相同或者类似的要素标记相同的符号而省略重复说明。图11是表示半导体装置A4的仰视图,且对应于第一实施方式的半导体装置A1的图5。
半导体装置A4与半导体装置A1的区别在于具备两个背面槽部87。在本实施方式中,封装树脂8具备以在y方向上排列的方式配置的两个背面槽部87。根据本实施方式,能够使第二端子220的从封装树脂8露出的部分、与搭载部背面112的沿面距离,较之于背面槽部87为一个时进一步延长。因此,在本实施方式中,也能够获得与第一实施方式相同的效果。背面槽部87的数量没有限定,也可以为三个以上。
基于图12对第五实施方式的半导体装置A5进行说明。在图12中,对于和上述的半导体装置A1相同或者类似的要素标记相同的符号而省略重复说明。图12是表示半导体装置A5的右侧视图,且对应于第一实施方式的半导体装置A1的图6。
半导体装置A5与半导体装置A1区别在于取代背面槽部87而具备背面凸部88。
背面凸部88以从树脂背面82突出的方式形成且呈在x方向上较长地延伸的形状。背面凸部88在yz平面上的截面呈四边形状。另外,背面凸部88的与第一侧面831或者第二侧面832平行的截面形状也是四边形。背面凸部88具备凸部主面881和一对凸部侧面882。凸部主面881是与树脂背面82平行的面,且以树脂背面82为基准而位于树脂主面81的相反侧。一对凸部侧面882分别与凸部主面881和树脂背面82相连,且为彼此朝向相反侧的面。背面凸部88是在xy平面上的截面积随着远离树脂背面82而减小的锥形状。一对凸部侧面882各自相对于xz平面倾斜3~5°左右。凸部侧面882的倾斜程度不限于图示例,也可以不倾斜。背面凸部88的高度(z方向的尺寸)例如为1mm左右,背面凸部88的宽度(例如,y方向的尺寸的平均值、最大值或者最小值)例如为1mm左右。
就背面凸部88的x方向的尺寸和z方向视角下的配置位置而言,与第一实施方式的背面槽部87相同。即,背面凸部88在z方向视角下,配置于树脂背面82的y方向的一端缘与搭载部背面112之间。就背面凸部88而言,一端延伸至第二端子220侧的树脂侧面83,且另一端延伸至树脂背面82的x方向中央附近。即,背面凸部88配置在第二端子220和树脂端面84的边界、与搭载部背面112之间。背面凸部88在z方向视角下不与第一导线1重叠。背面凸部88具有z方向的位置从树脂背面82向与树脂主面81的相反侧远离的凸部主面881。背面凸部88是本发明的“背面位移部”的一例。
根据本实施方式,封装树脂8具备以从树脂背面82突出的方式形成的背面凸部88。由此,能够使第二端子220的从封装树脂8露出的部分、与搭载部背面112的沿面距离延长。因此,在本实施方式中,也能够获得与第一实施方式相同的效果。
背面凸部88在yz平面上的截面形状没有限定,也可以是其它形状。例如可以是三角形状,也可以是半圆形状。封装树脂8可以具备以在y方向上排列的方式配置的多个背面凸部88。
基于图13对本发明第六实施方式的半导体装置A6进行说明。在图13中,对于和半导体装置A1相同或者类似的要素标记相同的符号而省略重复说明。图13是表示半导体装置A6的仰视图,且对应于半导体装置A1的图5。
半导体装置A6与半导体装置A1的区别在于具备端面凸部85、86。在本实施方式中,第一端子120和第二端子220从树脂端面84突出。
在本实施方式中,封装树脂8也具备背面槽部87,因此能够使第二端子220的从封装树脂8露出的部分、与搭载部背面112的沿面距离延长。因此,半导体装置A6也能够实现高耐电压化。
基于图14对第七实施方式的半导体装置A7进行说明。在图14中,对于和半导体装置A1相同或者类似的要素标记相同的符号而省略重复说明。图14是表示半导体装置A7的仰视图,且对应于半导体装置A1的图5。
半导体装置A7与半导体装置A1的区别在于不具备端面凸部85。在本实施方式中,第一端子120从树脂端面84突出。
在本实施方式中,封装树脂8也具备背面槽部87,因此能够使第二端子220的从封装树脂8露出的部分、与搭载部背面112的沿面距离延长。因此,半导体装置A6也能够实现高耐电压化。另外,在本实施方式中,封装树脂8具备端面凸部86,因此也能够使第二端子220的从封装树脂8露出的部分、与搭载部背面112的沿面距离延长。因此,能够进一步提高第二端子220与搭载部背面112之间的耐电压。端面凸部86也能够使第一端子120与第二端子220的沿面距离延长。由此,能够提高第一端子120与第二端子220之间的耐电压。
基于图15和图16对第八实施方式的半导体装置A8进行说明。在图15和图16中对于和半导体装置A1相同或者类似的要素标记相同的符号而省略重复说明。图15是表示半导体装置A8的要部俯视图,且对应于第一实施方式的半导体装置A1的图4。图16是表示半导体装置A8的仰视图,且对应于半导体装置A1的图5。
半导体装置A8与半导体装置A1的区别在于取代半导体元件5而具备半导体元件6。另外,半导体装置A8与半导体元件6的电极数匹配地具备三个端子。半导体装置A8具备:第一导线1、第二导线2、第三导线3、半导体元件6、键合引线71、72和封装树脂8。
第一导线1和第二导线2与第一实施方式的第一导线1和第二导线2同样地,与半导体元件6导通且当半导体装置A8安装于电路基板时,构成了半导体元件6与电路配线的导通路径。本实施方式的第一导线1的连结部130和第一端子120如图15所示那样,在搭载部110的y方向下侧配置于x方向中央。在本实施方式中,使第一端子120的中心线在y方向上延长而得到的虚拟线C1(单点划线)与半导体元件5和搭载部贯通孔113交叉。另外,本实施方式的第二导线2如图15所示那样,在第一导线1的搭载部110的y方向下侧靠近x方向右侧配置。使第二端子220的中心线在y方向上延长而得到的虚拟线C2(单点划线)不与半导体元件5和搭载部贯通孔113交叉。
第三导线3也与第一导线1和第二导线2同样地,与半导体元件6导通且当半导体装置A8安装于电路基板时,构成了半导体元件6与电路配线的导通路径。第三导线3的材质、尺寸和形状与第二导线2相同。
第三导线3与第一导线1和第二导线2远离配置,且如图15所示那样,在第一导线1的搭载部110的y方向下侧靠近x方向左侧配置。第三导线3具备引线键合部310和第三端子320。
引线键合部310是对键合引线72进行键合的部分,且在z方向视角下呈在x方向上较长的矩形状。引线键合部310具有引线键合部主面311和引线键合部背面312。引线键合部主面311和引线键合部背面312在z方向上彼此朝向相反侧。引线键合部主面311是朝向图15的近前侧的面。引线键合部主面311是对键合引线72进行键合的面。引线键合部背面312是朝向图15的进深侧的面。引线键合部310整体地被封装树脂8覆盖。
第三端子320与引线键合部310相连,并在y方向上延伸且一部分从封装树脂8露出。第三端子320经由引线键合部310和键合引线72与半导体元件5导通。
引线键合部310和第三端子320的厚度(z方向的尺寸)相同,且与第二导线2的引线键合部210和第二端子220相同。第三端子320的从封装树脂8露出的部分是与第一端子120和第二端子220的从封装树脂8露出的部分相同的形状。第三端子320的前端(与引线键合部310相连的部分的相反侧的端部)在y方向上位于与第一端子120和第二端子220的前端相同的位置。如图15所示,在本实施方式中,使第三端子320的中心线在y方向上延长而得到的虚拟线C3(单点划线)不与半导体元件5和搭载部贯通孔113交叉。
半导体元件6是发挥半导体装置A8的电气功能的要素。在本实施方式中,半导体元件6是MOSFET(metal-oxide-semiconductor field-effect transistor:金属氧化物半导体场效应晶体管)等晶体管。半导体元件6具有:元件主体60、元件主面61、元件背面(对应于图8中的元件背面52)、第一电极(对应于图8中的第一电极53)、第二电极64和第三电极65。
元件主面61和元件背面在z方向上彼此朝向相反侧。元件主面61是朝向图15的近前侧的面。元件背面是朝向图15的进深侧的面。第一电极配置于元件背面。第二电极64和第三电极65配置于元件主面61。在本实施方式中,第一电极是漏极电极,第二电极64是源极电极,第三电极65是栅极电极。
如图15所示,半导体元件6搭载于搭载部主面111的x方向中央,并且是搭载于在z方向视角下不与搭载部贯通孔113相交的位置。半导体元件6以元件背面朝向搭载部主面111的方式,经由导电性的接合材料59搭载于搭载部主面111。由此,半导体元件6的第一电极通过接合材料59与搭载部主面111接合,并与第一导线1电连接。键合引线71与半导体元件6的第二电极64、第二导线2的引线键合部主面211连接。由此,半导体元件6的第二电极64与第二导线2电连接。键合引线72与半导体元件6的第三电极65、第三导线3的引线键合部主面311连接。由此,半导体元件6的第三电极65与第三导线3电连接。键合引线71、72的材质、粗细、数量没有限定。与第一电极导通的第一导线1的第一端子120作为半导体装置A8的漏极端子发挥功能,与第二电极64导通的第二导线2的第二端子220作为半导体装置A8的源极端子发挥功能,与第三电极65导通的第三导线3的第三端子320作为半导体装置A8的栅极端子发挥功能。
本实施方式的封装树脂8与第一实施方式的封装树脂8相同,此外还具备端面凸部86’和背面槽部87’。
端面凸部86’与端面凸部85、86同样地,是从树脂端面84沿着y方向突出的部位,大致呈长方体形状。如图16所示,在本实施方式中,与第一端子120、第二端子220和第三端子320的配置匹配地,端面凸部85配置于x方向中央,端面凸部86与端面凸部85远离且靠近x方向左侧配置,端面凸部86’与端面凸部85远离且靠近x方向右侧配置。第三导线3的第三端子320从端面凸部86’突出。
背面槽部87’与背面槽部87同样地,是以从树脂背面82凹陷的方式形成且在x方向上延伸的槽。就背面槽部87’的形状和结构而言,与背面槽部87相同。背面槽部87’在z方向视角下,配置于树脂背面82的y方向的一端缘(在图16中为下方端缘)与搭载部背面112之间。就背面槽部87’而言,一端延伸至第三端子320侧的树脂侧面83,且开口于该树脂侧面83。另外,背面槽部87’的另一端延伸至树脂背面82的x方向中央近前。此外,在本实施方式中,背面槽部87的另一端也到达树脂背面82的x方向中央近前。即,背面槽部87’配置在第三端子320和树脂端面84的边界、与搭载部背面112之间。另外,背面槽部87’在z方向视角下不与第一导线1重叠。背面槽部87’具有z方向的位置以从树脂背面82向树脂主面81侧远离的方式移动而成的槽部底面,且为本发明的“第二背面位移部”的一例。
在本实施方式中,也能够获得与第一实施方式相同的效果。另外,根据本实施方式,封装树脂8还具有以从树脂背面82凹陷的方式形成的背面槽部87’。由此,能够使第三端子320的从封装树脂8露出的部分、与搭载部背面112的沿面距离延长。因此,能够提高第三端子320与搭载部背面112之间的耐电压。
另外,根据本实施方式,封装树脂8还具备从树脂端面84突出的端面凸部86’,第三端子320从端面凸部86’突出。由此,能够使第三端子320的从封装树脂8露出的部分、与搭载部背面112的沿面距离,延长端面凸部86的y方向的尺寸。因此,能够进一步提高第三端子320与搭载部背面112之间的耐电压。另外,端面凸部86’也能够使第一端子120与第三端子320的沿面距离延长。由此,能够提高第一端子120与第三端子320之间的耐电压。
也可以如图17所示的变形例这样,不是设置背面槽部87’,而是延长背面槽部87的另一端,且延伸至第三端子320侧的树脂侧面83。
基于图18和图19对第九实施方式的半导体装置A9进行说明。在图18和图19中,对于和上述的半导体装置A1相同或者类似的要素标记相同的符号而省略重复说明。图18是表示半导体装置A9的要部俯视图,且对应于第一实施方式的半导体装置A1的图4。图19是表示半导体装置A9的仰视图,且对应于第一实施方式的半导体装置A1的图5。
本实施方式的半导体装置A9与第八实施方式的半导体装置A8的区别在于第一端子120和第三端子320的配置。
本实施方式的第一导线1的连结部130和第一端子120的配置和第二导线2的配置与第一实施方式的半导体装置A1相同。即,第一导线1的连结部130和第一端子120如图18所示那样,在搭载部110的y方向下侧靠近x方向左侧配置。使第一端子120的中心线在y方向上延长而得到的虚拟线C1(单点划线)不与半导体元件5和搭载部贯通孔113交叉。另外,第二导线2如图18所示那样,在第一导线1的搭载部110的y方向下侧靠近x方向右侧配置。使第二端子220的中心线在y方向上延长而得到的虚拟线C2(单点划线)不与半导体元件5和搭载部贯通孔113交叉。本实施方式的第三导线3与第一导线1和第二导线2远离配置,且如图18所示那样,在第一导线1的搭载部110的y方向下侧配置于x方向中央。
本实施方式的封装树脂8的端面凸部86的形状与第八实施方式的情况不同,不具备端面凸部86’。另外,端面凸部85、86的配置也与第八实施方式的情况不同。如图19所示,在本实施方式中,与第一端子120、第二端子220和第三端子320的配置匹配地,端面凸部85配置于x方向右侧,端面凸部86与端面凸部85远离且配置于x方向左侧。就端面凸部86而言,x方向的尺寸与第八实施方式的情况相比较大,且从x方向左端延伸至端面凸部85附近。第二导线2的第二端子220和第三导线3的第三端子320从端面凸部86突出。
本实施方式的封装树脂8不具备背面槽部87’。背面槽部87的x方向的尺寸与第八实施方式的情况相比较大,背面槽部87的另一端延伸至端面凸部85与端面凸部86之间。即,就背面槽部87而言,延伸至第三端子320和树脂端面84的边界、与搭载部背面112之间。另外,背面槽部87在z方向视角下不与第一导线1重叠。
在本实施方式中,也能够获得与第一实施方式相同的效果。另外,根据本实施方式,背面槽部87延伸至端面凸部85与端面凸部86之间。由此,能够使第三端子320的从封装树脂8露出的部分、与搭载部背面112的沿面距离延长。因此,能够提高第三端子320与搭载部背面112之间的耐电压。
根据本实施方式,第三端子320从端面凸部86突出。由此,能够使第三端子320的从封装树脂8露出的部分、与搭载部背面112的沿面距离,延长端面凸部86的y方向的尺寸。因此,能够进一步提高第三端子320与搭载部背面112之间的耐电压。端面凸部86也能够使第一端子120与第三端子320的沿面距离延长。由此,能够提高第一端子120与第三端子320之间的耐电压。
也可以如图20所示的变形例这样,不是背面槽部87延长,而是背面槽部87配置在第二端子220和树脂端面84的边界、与搭载部背面112之间,且背面槽部87’配置在第三端子320和树脂端面84的边界、与搭载部背面112之间。此时,背面槽部87’具有z方向的位置从树脂背面82向树脂主面81侧远离的槽部底面。背面槽部87’是本发明的“第二背面位移部”的一例。
基于图21对第十实施方式的半导体装置A10进行说明。在图21中,对于和上述的半导体装置A1相同或者类似的要素标记相同的符号而省略重复说明。图21是表示半导体装置A10的仰视图,且对应于第一实施方式的半导体装置A1的图5。
本实施方式的半导体装置A10相对于第九实施方式的半导体装置A9而言,区别在于以下的方面。即,半导体装置A10具备具有四个电极的半导体元件7。另外,半导体装置A10具备与这四个电极分别导通的四个导线。具体而言,半导体元件7具备:漏极电极D、栅极电极G、驱动源极电极DS和功率源极电极PS。如图21所示,漏极电极D与导线1导通。同样地,栅极电极G与导线2导通,驱动源极电极DS与导线3导通,功率源极电极PS与导线4导通。导线1~3分别具有端子120、220、320。同样地,导线4具有端子420。在图示例中,端子220、320、420在x方向上彼此等间隔地远离。另一方面,端子120(漏极端子)和端子420(功率源极端子)的间隔距离与端子320(驱动源极端子)和端子420(功率源极端子)的间隔距离相比较大。当然,这样的配置仅为例示,本发明不限于此。
在半导体装置A10中,也与半导体装置A9(图19参照)同样地,在封装树脂8上形成有在x方向上延伸的背面槽部87。在图示例中,背面槽部87从封装树脂8左侧的缘部连续地延伸,且在漏极端子120的近前(端面凸部85与端面凸部86之间)结束。当然,本发明不限于该例。例如可以如图17所示那样构成为,背面槽部87从封装树脂8的左侧缘部延伸至右侧缘部,也可以如图20所示那样,由彼此远离的多个部分(参照图20的符号87、87’)构成。另外,也可以除了图21所示的背面槽部87之外,还在封装树脂8上形成有追加的背面槽部(参照图11)。或者,也可以取代背面槽部87而设置有从树脂背面82沿着z方向突出的背面凸部(参照图12的符号88)。总之,在具有四个导线的半导体装置A10中,也能够通过在封装树脂8的预定部位设置至少一个槽部或凸部,从而获得与上述各实施方式相同的效果。
本发明的半导体装置不限于上述实施方式。本发明的半导体装置的各部分的具体的结构可以进行多种设计变更。
附记1.
一种半导体装置,其具备:
半导体元件,其具有在厚度方向上彼此朝向相反侧的元件主面及元件背面、配置在上述元件背面的第一电极、以及配置在上述元件主面的第二电极;
第一导线,其具有搭载部和经由上述搭载部与上述第一电极导通的第一端子,其中该搭载部具有供上述半导体元件的上述第一电极接合的搭载部主面以及在上述厚度方向上朝向与上述搭载部主面的相反侧的搭载部背面;
第二导线,其具有与上述第二电极导通的第二端子;以及
封装树脂,其覆盖上述第一导线及上述第二导线各自的一部分和上述半导体元件,
上述第一端子及上述第二端子从上述封装树脂突出,
上述封装树脂具备:在上述厚度方向上彼此朝向相反侧的树脂主面及树脂背面;将上述树脂主面及上述树脂背面连接并且朝向上述第一端子及上述第二端子突出的方向的树脂端面;以及将上述树脂主面及上述树脂背面连接并且与上述树脂端面相连的一对树脂侧面,
上述搭载部背面从上述树脂背面露出,
上述封装树脂在上述树脂背面侧具备背面位移部,该背面位移部在上述第二端子和上述树脂端面的边界与上述搭载部背面之间,具有在上述厚度方向上从上述树脂背面远离的部分。
附记2.
附记1所述的半导体装置,其中,上述背面位移部在上述厚度方向视角下不与上述第一导线重叠。
附记3.
附记1或2所述的半导体装置,其中,上述背面位移部延伸至上述第二端子侧的上述树脂侧面。
附记4.
附记1至3中任一项所述的半导体装置,其中,上述背面位移部是与上述树脂侧面平行的截面呈四边形状的槽。
附记5.
附记1至3中任一项所述的半导体装置,其中,上述背面位移部从上述树脂背面突出,且与上述树脂侧面平行的截面呈四边形状。
附记6.
附记1至5中任一项所述的半导体装置,其中,上述背面位移部包括多个背面位移部。
附记7.
附记1至6中任一项所述的半导体装置,其中,上述第一导线具备与上述搭载部和上述第一端子相连的连结部,上述连结部相对于上述搭载部及上述第一端子倾斜。
附记8.
附记1至7中任一项所述的半导体装置,其中,上述封装树脂具备从上述树脂主面贯通至上述树脂背面的树脂贯通孔,上述搭载部具备从上述搭载部主面贯通至上述搭载部背面的搭载部贯通孔,上述树脂贯通孔位于上述搭载部贯通孔的内侧。
附记9.
附记1至8中任一项所述的半导体装置,其中,上述封装树脂具备从上述树脂端面突出的端面凸部,上述第二端子从上述端面凸部突出。
附记10.
附记9所述的半导体装置,其中,上述封装树脂具备从上述端面凸部远离并且从上述树脂端面突出的第二端面凸部,上述第一端子从上述第二端面凸部突出。
附记11.
附记1至10中任一项所述的半导体装置,其中,上述半导体元件是二极管。
附记12.
附记1至10中任一项所述的半导体装置,其中,
在还具备第三导线的结构中,
上述半导体元件具备配置在上述元件主面的第三电极,上述第三导线具备与上述第三电极导通的第三端子。
附记13.
附记12所述的半导体装置,其中,上述封装树脂在上述树脂背面侧具备第二背面位移部,该第二背面位移部在上述第三端子和上述树脂端面的边界与上述搭载部背面之间,具有在上述厚度方向上从上述树脂背面远离的部分。
附记14.
附记12所述的半导体装置,其中,上述背面位移部延伸至上述第三端子和上述树脂端面的边界与上述搭载部背面之间。
附记15.
附记11至14中任一项所述的半导体装置,其中,上述半导体元件是晶体管。
附记16.
附记12所述的半导体装置,其中,
在还具备第四导线的结构中,
上述半导体元件具备第四电极,上述第四导线具备与上述第四电极导通的第四端子。
Claims (16)
1.一种半导体装置,其特征在于,具备:
半导体元件,其具有在厚度方向上彼此朝向相反侧的元件主面及元件背面、配置在上述元件背面的第一电极、以及配置在上述元件主面的第二电极;
第一导线,其具有搭载部和经由上述搭载部与上述第一电极导通的第一端子,其中该搭载部具有供上述半导体元件的上述第一电极接合的搭载部主面以及在上述厚度方向上朝向与上述搭载部主面的相反侧的搭载部背面;
第二导线,其具有与上述第二电极导通的第二端子;以及
封装树脂,其覆盖上述第一导线及上述第二导线各自的一部分和上述半导体元件,
上述第一端子及上述第二端子从上述封装树脂突出,
上述封装树脂具备:在上述厚度方向上彼此朝向相反侧的树脂主面及树脂背面;将上述树脂主面及上述树脂背面连接并且朝向上述第一端子及上述第二端子突出的方向的树脂端面;以及将上述树脂主面及上述树脂背面连接并且与上述树脂端面相连的一对树脂侧面,
上述搭载部背面从上述树脂背面露出,
上述封装树脂在上述树脂背面侧具备背面位移部,该背面位移部在上述第二端子和上述树脂端面的边界与上述搭载部背面之间,具有在上述厚度方向上从上述树脂背面远离的部分。
2.根据权利要求1所述的半导体装置,其特征在于,
上述背面位移部在上述厚度方向视角下不与上述第一导线重叠。
3.根据权利要求1或2所述的半导体装置,其特征在于,
上述背面位移部延伸至上述第二端子侧的上述树脂侧面。
4.根据权利要求1至3中任一项所述的半导体装置,其特征在于,
上述背面位移部是与上述树脂侧面平行的截面呈四边形状的槽。
5.根据权利要求1至3中任一项所述的半导体装置,其特征在于,
上述背面位移部从上述树脂背面突出,且与上述树脂侧面平行的截面呈四边形状。
6.根据权利要求1至5中任一项所述的半导体装置,其特征在于,
上述背面位移部包括多个背面位移部。
7.根据权利要求1至6中任一项所述的半导体装置,其特征在于,
上述第一导线具备与上述搭载部和上述第一端子相连的连结部,上述连结部相对于上述搭载部及上述第一端子倾斜。
8.根据权利要求1至7中任一项所述的半导体装置,其特征在于,
上述封装树脂具备从上述树脂主面贯通至上述树脂背面的树脂贯通孔,上述搭载部具备从上述搭载部主面贯通至上述搭载部背面的搭载部贯通孔,上述树脂贯通孔位于上述搭载部贯通孔的内侧。
9.根据权利要求1至8中任一项所述的半导体装置,其特征在于,
上述封装树脂具备从上述树脂端面突出的端面凸部,上述第二端子从上述端面凸部突出。
10.根据权利要求9所述的半导体装置,其特征在于,
上述封装树脂具备从上述端面凸部远离并且从上述树脂端面突出的第二端面凸部,上述第一端子从上述第二端面凸部突出。
11.根据权利要求1至10中任一项所述的半导体装置,其特征在于,
上述半导体元件是二极管。
12.根据权利要求1至10中任一项所述的半导体装置,其特征在于,
在还具备第三导线的结构中,
上述半导体元件具备配置在上述元件主面的第三电极,上述第三导线具备与上述第三电极导通的第三端子。
13.根据权利要求12所述的半导体装置,其特征在于,
上述封装树脂在上述树脂背面侧具备第二背面位移部,该第二背面位移部在上述第三端子和上述树脂端面的边界与上述搭载部背面之间,具有在上述厚度方向上从上述树脂背面远离的部分。
14.根据权利要求12所述的半导体装置,其特征在于,
上述背面位移部延伸至上述第三端子和上述树脂端面的边界与上述搭载部背面之间。
15.根据权利要求11至14中任一项所述的半导体装置,其特征在于,
上述半导体元件是晶体管。
16.根据权利要求12所述的半导体装置,其特征在于,
在还具备第四导线的结构中,
上述半导体元件具备第四电极,上述第四导线具备与上述第四电极导通的第四端子。
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JP2017147433A (ja) * | 2015-12-16 | 2017-08-24 | ローム株式会社 | 半導体装置 |
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