CN1126156C - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

Info

Publication number
CN1126156C
CN1126156C CN99107398A CN99107398A CN1126156C CN 1126156 C CN1126156 C CN 1126156C CN 99107398 A CN99107398 A CN 99107398A CN 99107398 A CN99107398 A CN 99107398A CN 1126156 C CN1126156 C CN 1126156C
Authority
CN
China
Prior art keywords
semiconductor device
interlayer dielectric
forms
substrate
diaphragm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN99107398A
Other languages
English (en)
Chinese (zh)
Other versions
CN1234605A (zh
Inventor
横山孝司
宇佐美达矢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of CN1234605A publication Critical patent/CN1234605A/zh
Application granted granted Critical
Publication of CN1126156C publication Critical patent/CN1126156C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G31/00—Soilless cultivation, e.g. hydroponics
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P60/00—Technologies relating to agriculture, livestock or agroalimentary industries
    • Y02P60/20—Reduction of greenhouse gas [GHG] emissions in agriculture, e.g. CO2
    • Y02P60/21—Dinitrogen oxide [N2O], e.g. using aquaponics, hydroponics or efficiency measures

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Environmental Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
CN99107398A 1998-04-15 1999-04-15 半导体器件及其制造方法 Expired - Fee Related CN1126156C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP104439/98 1998-04-15
JP10443998A JP3250518B2 (ja) 1998-04-15 1998-04-15 半導体装置及びその製造方法
JP104439/1998 1998-04-15

Publications (2)

Publication Number Publication Date
CN1234605A CN1234605A (zh) 1999-11-10
CN1126156C true CN1126156C (zh) 2003-10-29

Family

ID=14380705

Family Applications (1)

Application Number Title Priority Date Filing Date
CN99107398A Expired - Fee Related CN1126156C (zh) 1998-04-15 1999-04-15 半导体器件及其制造方法

Country Status (4)

Country Link
JP (1) JP3250518B2 (ja)
KR (1) KR19990083222A (ja)
CN (1) CN1126156C (ja)
TW (1) TW406333B (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3248492B2 (ja) * 1998-08-14 2002-01-21 日本電気株式会社 半導体装置及びその製造方法
KR100300065B1 (ko) * 1999-01-20 2002-01-19 김영환 반도체 소자의 배선 형성방법
JP2001313333A (ja) * 2000-02-23 2001-11-09 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US20010015499A1 (en) 2000-02-23 2001-08-23 Hiroshi Yuasa Semiconductor device and method for fabricating the same
JP2002026121A (ja) * 2000-06-30 2002-01-25 Tokyo Electron Ltd 半導体装置およびその製造方法、絶縁膜の形成方法
JP2002043423A (ja) * 2000-07-24 2002-02-08 Tokyo Ohka Kogyo Co Ltd 被膜の処理方法およびこの方法を用いた半導体素子の製造方法
JP2002043422A (ja) * 2000-07-24 2002-02-08 Tokyo Ohka Kogyo Co Ltd 被膜の処理方法およびこの方法を用いた半導体素子の製造方法
US7482694B2 (en) 2002-04-03 2009-01-27 Nec Coporation Semiconductor device and its manufacturing method
JP3596616B2 (ja) 2002-09-25 2004-12-02 沖電気工業株式会社 半導体装置の製造方法
JP2004128256A (ja) 2002-10-03 2004-04-22 Oki Electric Ind Co Ltd 多層構造半導体素子の製造方法
JP4057972B2 (ja) 2003-07-25 2008-03-05 富士通株式会社 半導体装置の製造方法
JP2005167081A (ja) 2003-12-04 2005-06-23 Renesas Technology Corp 半導体装置およびその製造方法
JP5522979B2 (ja) * 2009-06-16 2014-06-18 国立大学法人東北大学 成膜方法及び処理システム
CN102136451A (zh) * 2010-01-27 2011-07-27 中芯国际集成电路制造(上海)有限公司 形成金属互连的方法
US9659856B2 (en) 2014-10-24 2017-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Two step metallization formation
US11626285B2 (en) * 2019-09-10 2023-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device

Also Published As

Publication number Publication date
TW406333B (en) 2000-09-21
JP3250518B2 (ja) 2002-01-28
JPH11297829A (ja) 1999-10-29
CN1234605A (zh) 1999-11-10
KR19990083222A (ko) 1999-11-25

Similar Documents

Publication Publication Date Title
CN1126156C (zh) 半导体器件及其制造方法
CN1298045C (zh) 具有埋入的多层配线结构的半导体器件的制造方法
CN1222030C (zh) 制造具有碳化硅膜的半导体器件的方法
CN1144286C (zh) 半导体器件及制造该半导体器件的方法
CN1112722C (zh) 半导体器件的制造方法
CN1113407C (zh) 形成沟槽隔离结构的方法
CN1492504A (zh) 电子器件及其制造方法
CN1293622C (zh) 半导体器件及其制造方法
CN1189927C (zh) 绝缘膜形成材料,绝缘膜,形成绝缘膜的方法及半导体器件
CN1967800A (zh) 半导体集成电路器件的制造方法
CN1835226A (zh) 半导体器件及其制造方法
CN101045820A (zh) 形成绝缘膜的组合物以及制造半导体器件的方法
CN1601741A (zh) 半导体器件及其制造方法
CN100343975C (zh) 半导体装置的制造方法
CN1855467A (zh) 半导体装置及其制造方法
CN1873944A (zh) 半导体器件及其制造方法
CN1512272A (zh) 利用氟化氩曝光光源制造半导体器件的方法
CN100336199C (zh) 半导体装置的制造方法
CN1118095C (zh) 利用化学机械抛光工艺的半导体器件制造方法
CN1819130A (zh) 半导体装置及其制造方法、电路基板、及电子仪器
CN101043021A (zh) 具有镶嵌形成的配线的半导体器件及其制造方法
CN1612336A (zh) 半导体装置及其制造方法
CN1314102C (zh) 半导体装置及其制造方法
CN1512545A (zh) 防充电的模板掩膜及其制造方法
CN1385886A (zh) 半导体器件的制造方法

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
ASS Succession or assignment of patent right

Owner name: NEC ELECTRONICS TAIWAN LTD.

Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD.

Effective date: 20030403

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20030403

Address after: Kanagawa, Japan

Applicant after: NEC Corp.

Address before: Tokyo, Japan

Applicant before: NEC Corp.

C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee