CN112038313B - 半导体装置用接合线 - Google Patents

半导体装置用接合线 Download PDF

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Publication number
CN112038313B
CN112038313B CN202010956086.0A CN202010956086A CN112038313B CN 112038313 B CN112038313 B CN 112038313B CN 202010956086 A CN202010956086 A CN 202010956086A CN 112038313 B CN112038313 B CN 112038313B
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Prior art keywords
bonding
bonding wire
wire
concentration
alloy
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Chinese (zh)
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CN112038313A (zh
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山田隆
小田大造
榛原照男
宇野智裕
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Nippon Steel Chemical and Materials Co Ltd
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Nippon Steel and Sumikin Chemical Co Ltd
Nippon Steel Chemical and Materials Co Ltd
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    • H—ELECTRICITY
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H10W20/4424—Copper alloys
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    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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    • C—CHEMISTRY; METALLURGY
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    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Wire Bonding (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
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Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106233447A (zh) 2014-04-21 2016-12-14 新日铁住金高新材料株式会社 半导体装置用接合线
DE112015004682B4 (de) * 2015-08-12 2020-07-30 Nippon Micrometal Corporation Bonddraht für Halbleitervorrichtung
JP6002300B1 (ja) * 2015-09-02 2016-10-05 田中電子工業株式会社 ボールボンディング用パラジウム（Ｐｄ）被覆銅ワイヤ
JP6452661B2 (ja) * 2016-11-11 2019-01-16 日鉄マイクロメタル株式会社 半導体装置用ボンディングワイヤ
US10950571B2 (en) * 2017-02-22 2021-03-16 Nippon Steel Chemical & Material Co., Ltd. Bonding wire for semiconductor device
JP6618662B2 (ja) * 2017-08-09 2019-12-11 日鉄ケミカル＆マテリアル株式会社 半導体装置用Ｃｕ合金ボンディングワイヤ
KR102167481B1 (ko) * 2017-08-09 2020-10-19 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 반도체 장치용 Cu 합금 본딩 와이어
DE112017000346T5 (de) * 2017-12-28 2019-08-29 Nippon Micrometal Corporation Bonddraht für Halbleiterbauelement
JP6487108B1 (ja) * 2018-11-26 2019-03-20 田中電子工業株式会社 パラジウム被覆銅ボンディングワイヤ及びその製造方法
CN109599381A (zh) * 2018-11-30 2019-04-09 合肥中晶新材料有限公司 一种固定比例金基/银基键合线及其制备方法
JP6507329B1 (ja) * 2019-02-08 2019-04-24 田中電子工業株式会社 パラジウム被覆銅ボンディングワイヤ、ワイヤ接合構造、半導体装置及び半導体装置の製造方法
JP7156975B2 (ja) 2019-02-26 2022-10-19 三菱重工業株式会社 運営評価装置、運営評価方法、およびプログラム
WO2020183748A1 (ja) * 2019-03-12 2020-09-17 田中電子工業株式会社 パラジウム被覆銅ボンディングワイヤ、パラジウム被覆銅ボンディングワイヤの製造方法、及びこれを用いたワイヤ接合構造、半導体装置並びにその製造方法
WO2020218968A1 (en) * 2019-04-26 2020-10-29 Heraeus Materials Singapore Pte. Ltd. Coated wire
CN113825849B (zh) * 2019-06-04 2024-02-13 田中电子工业株式会社 钯覆盖铜接合线、钯覆盖铜接合线的制造方法、使用了其的半导体装置及半导体装置的制造方法
WO2021065036A1 (ja) * 2019-10-01 2021-04-08 田中電子工業株式会社 ワイヤ接合構造とそれに用いられるボンディングワイヤ及び半導体装置
EP4130310A4 (en) * 2020-03-25 2024-08-07 Nippon Micrometal Corporation Bonding wire for semiconductor device
JP7629468B2 (ja) 2020-10-20 2025-02-13 日鉄マイクロメタル株式会社 半導体装置用Ａｇ合金ボンディングワイヤ
KR20230160837A (ko) * 2021-03-26 2023-11-24 가부시키가이샤 요코오 프로브
KR20250016058A (ko) * 2022-06-24 2025-02-03 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 반도체 장치용 본딩 와이어
CN116657207B (zh) 2023-06-25 2024-04-26 上海万生合金材料有限公司 一种铜镀钯金键合线及其电镀工艺
TW202548036A (zh) * 2024-03-28 2025-12-16 日商拓自達電線股份有限公司 接合線

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102422404A (zh) * 2009-07-30 2012-04-18 新日铁高新材料株式会社 半导体用接合线
CN104241237A (zh) * 2013-06-13 2014-12-24 田中电子工业株式会社 超声波键合用镀覆铜丝结构

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223969B1 (enExample) 1966-12-28 1977-06-28
DE3371096D1 (en) * 1982-12-01 1987-05-27 Electrofoils Techn Ltd Treatment of copper foil
JPS60160554U (ja) 1984-03-31 1985-10-25 古河電気工業株式会社 半導体用ボンディング細線
JPS6120693A (ja) * 1984-07-06 1986-01-29 Toshiba Corp ボンデイングワイヤ−
JPS6148543A (ja) * 1984-08-10 1986-03-10 Sumitomo Electric Ind Ltd 半導体素子結線用銅合金線
JPS6152333A (ja) * 1984-08-21 1986-03-15 Toshiba Corp ボンデイングワイヤ−
JPS6152332A (ja) * 1984-08-21 1986-03-15 Toshiba Corp ボンデイングワイヤ−
JPH0736431B2 (ja) * 1985-06-28 1995-04-19 三菱マテリアル株式会社 半導体装置のボンディングワイヤ用高純度銅の製造法
JPS61255045A (ja) 1985-05-07 1986-11-12 Nippon Mining Co Ltd 半導体装置用ボンデイングワイヤ及びその製造方法
GB2181156A (en) * 1985-10-04 1987-04-15 London Scandinavian Metall Grain refining copper-bowed metals
JPS62130248A (ja) * 1985-11-29 1987-06-12 Furukawa Electric Co Ltd:The ボンデイング用銅細線
JPH01263289A (ja) 1988-04-13 1989-10-19 Hitachi Cable Ltd 高純度無酸素銅の製造方法
JP3481392B2 (ja) * 1996-06-13 2003-12-22 古河電気工業株式会社 電子部品リード部材及びその製造方法
JP3379412B2 (ja) * 1997-05-30 2003-02-24 松下電器産業株式会社 パラジウムめっき液とこれを用いたパラジウムめっき皮膜及びこのパラジウムめっき皮膜を有する半導体装置用リードフレーム
JP2004064033A (ja) * 2001-10-23 2004-02-26 Sumitomo Electric Wintec Inc ボンディングワイヤー
TW200414453A (en) * 2002-03-26 2004-08-01 Sumitomo Electric Wintec Inc Bonding wire and IC device using the bonding wire
KR100514312B1 (ko) * 2003-02-14 2005-09-13 헤라우스오리엔탈하이텍 주식회사 반도체 소자용 본딩 와이어
JP2005167020A (ja) 2003-12-03 2005-06-23 Sumitomo Electric Ind Ltd ボンディングワイヤーおよびそれを使用した集積回路デバイス
KR20060090700A (ko) 2003-10-20 2006-08-14 스미토모덴키고교가부시키가이샤 본딩와이어 및 그것을 사용한 집적회로 디바이스
JP4158928B2 (ja) 2004-09-02 2008-10-01 古河電気工業株式会社 ボンディングワイヤー及びその製造方法
KR101016158B1 (ko) 2005-01-05 2011-02-17 신닛테츠 마테리알즈 가부시키가이샤 반도체 장치용 본딩 와이어
JP4542203B2 (ja) * 2007-07-24 2010-09-08 新日鉄マテリアルズ株式会社 半導体装置用ボンディングワイヤ
US20090127317A1 (en) * 2007-11-15 2009-05-21 Infineon Technologies Ag Device and method for producing a bonding connection
KR101055957B1 (ko) * 2007-12-03 2011-08-09 가부시키가이샤 닛데쓰 마이크로 메탈 반도체 장치용 본딩 와이어
EP2239766B1 (en) * 2008-01-25 2013-03-20 Nippon Steel & Sumikin Materials Co., Ltd. Bonding wire for semiconductor device
US8815019B2 (en) * 2009-03-17 2014-08-26 Nippon Steel & Sumikin Materials., Ltd. Bonding wire for semiconductor
JP5497360B2 (ja) * 2009-07-30 2014-05-21 新日鉄住金マテリアルズ株式会社 半導体用ボンディングワイヤー
JP4637256B1 (ja) 2009-09-30 2011-02-23 新日鉄マテリアルズ株式会社 半導体用ボンディングワイヤー
MY166908A (en) 2010-03-25 2018-07-24 Tanaka Densi Kogyo K K HIGH PURITY Cu BONDING WIRE
TW201205695A (en) * 2010-07-16 2012-02-01 Nippon Steel Materials Co Ltd Bonding wire for semiconductor
JP4919364B2 (ja) 2010-08-11 2012-04-18 田中電子工業株式会社 ボールボンディング用金被覆銅ワイヤ
JP5403702B2 (ja) 2011-04-11 2014-01-29 タツタ電線株式会社 銅ボンディングワイヤ
JP4958249B2 (ja) 2011-04-26 2012-06-20 田中電子工業株式会社 ボールボンディング用金被覆銅ワイヤ
CN102324392B (zh) * 2011-10-19 2013-03-27 广东佳博电子科技有限公司 一种防氧化的铜基键合丝的制备工艺
JP5088981B1 (ja) * 2011-12-21 2012-12-05 田中電子工業株式会社 Ｐｄ被覆銅ボールボンディングワイヤ
JP2013172032A (ja) 2012-02-21 2013-09-02 Nippon Micrometal Corp ボンディングワイヤの製造方法
CN203192789U (zh) 2013-02-01 2013-09-11 风青实业股份有限公司 半导体用焊线
US8680660B1 (en) * 2013-03-12 2014-03-25 Freescale Semiconductor, Inc. Brace for bond wire
CN104060281A (zh) * 2013-03-21 2014-09-24 吕传盛 固相扩散反应铜钯合金线及其制造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102422404A (zh) * 2009-07-30 2012-04-18 新日铁高新材料株式会社 半导体用接合线
CN104241237A (zh) * 2013-06-13 2014-12-24 田中电子工业株式会社 超声波键合用镀覆铜丝结构

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