SG10201908464VA - Bonding wire for semiconductor device - Google Patents
Bonding wire for semiconductor deviceInfo
- Publication number
- SG10201908464VA SG10201908464VA SG10201908464VA SG10201908464VA SG 10201908464V A SG10201908464V A SG 10201908464VA SG 10201908464V A SG10201908464V A SG 10201908464VA SG 10201908464V A SG10201908464V A SG 10201908464VA
- Authority
- SG
- Singapore
- Prior art keywords
- bonding
- bonding wire
- semiconductor device
- coating layer
- bonded part
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0425—Copper-based alloys
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- C—CHEMISTRY; METALLURGY
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- C22C—ALLOYS
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- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0466—Alloys based on noble metals
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- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0483—Alloys based on the low melting point metals Zn, Pb, Sn, Cd, In or Ga
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- C—CHEMISTRY; METALLURGY
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- C22C5/04—Alloys based on a platinum group metal
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- C—CHEMISTRY; METALLURGY
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- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
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- C23C18/1651—Two or more layers only obtained by electroless plating
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- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
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- General Chemical & Material Sciences (AREA)
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- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
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Abstract
BONDING WIRE FOR SEMICONDUCTOR DEVICE 5 There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices. 10 The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. With this configuration, it is 15 able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 20 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170°C or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2015106368 | 2015-05-26 | ||
PCT/JP2015/066392 WO2016189752A1 (en) | 2015-05-26 | 2015-06-05 | Bonding wire for semiconductor device |
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SG10201908464VA true SG10201908464VA (en) | 2019-11-28 |
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SG10201608695VA SG10201608695VA (en) | 2015-05-26 | 2015-09-18 | Bonding wire for semiconductor device |
SG10201908464V SG10201908464VA (en) | 2015-05-26 | 2015-09-18 | Bonding wire for semiconductor device |
SG11201604378VA SG11201604378VA (en) | 2015-05-26 | 2015-09-18 | Bonding wire for semiconductor device |
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SG10201608695VA SG10201608695VA (en) | 2015-05-26 | 2015-09-18 | Bonding wire for semiconductor device |
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SG11201604378VA SG11201604378VA (en) | 2015-05-26 | 2015-09-18 | Bonding wire for semiconductor device |
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US (3) | US10236272B2 (en) |
EP (1) | EP3121841B1 (en) |
JP (3) | JP6353486B2 (en) |
KR (3) | KR101718673B1 (en) |
CN (5) | CN111276460B (en) |
DE (2) | DE112015006616B3 (en) |
MY (2) | MY172944A (en) |
PH (1) | PH12016500999A1 (en) |
SG (3) | SG10201608695VA (en) |
TW (1) | TWI652693B (en) |
WO (1) | WO2016189752A1 (en) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
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US10950570B2 (en) | 2014-04-21 | 2021-03-16 | Nippon Steel Chemical & Material Co., Ltd. | Bonding wire for semiconductor device |
MY183371A (en) * | 2015-08-12 | 2021-02-18 | Nippon Micrometal Corp | Bonding wire for semiconductor device |
JP6002300B1 (en) * | 2015-09-02 | 2016-10-05 | 田中電子工業株式会社 | Palladium (Pd) coated copper wire for ball bonding |
DE112018000061B4 (en) * | 2017-02-22 | 2021-12-09 | Nippon Micrometal Corporation | Bond wire for semiconductor components |
SG11202001066VA (en) * | 2017-08-09 | 2020-03-30 | Nippon Steel Chemical & Material Co Ltd | Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE |
EP3667710B1 (en) * | 2017-08-09 | 2022-01-05 | NIPPON STEEL Chemical & Material Co., Ltd. | Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE |
CN111418047A (en) * | 2017-12-28 | 2020-07-14 | 日铁新材料股份有限公司 | Bonding wire for semiconductor device |
JP6487108B1 (en) * | 2018-11-26 | 2019-03-20 | 田中電子工業株式会社 | Palladium-coated copper bonding wire and manufacturing method thereof |
CN109599381A (en) * | 2018-11-30 | 2019-04-09 | 合肥中晶新材料有限公司 | A kind of fixed proportion auri/silver-based bonding line and preparation method thereof |
JP6507329B1 (en) * | 2019-02-08 | 2019-04-24 | 田中電子工業株式会社 | Palladium-coated copper bonding wire, wire bonding structure, semiconductor device, and method of manufacturing semiconductor device |
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