CN1119341A - 用于多层晶片的吸收层和生产该吸收层的方法 - Google Patents

用于多层晶片的吸收层和生产该吸收层的方法 Download PDF

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Publication number
CN1119341A
CN1119341A CN95107181A CN95107181A CN1119341A CN 1119341 A CN1119341 A CN 1119341A CN 95107181 A CN95107181 A CN 95107181A CN 95107181 A CN95107181 A CN 95107181A CN 1119341 A CN1119341 A CN 1119341A
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CN
China
Prior art keywords
layer
polysilicon
wafer
absorber
working
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN95107181A
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English (en)
Chinese (zh)
Inventor
威廉·G·伊斯特尔
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AT&T Corp
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AT&T Corp
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Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of CN1119341A publication Critical patent/CN1119341A/zh
Pending legal-status Critical Current

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    • H10P36/00—
    • H10P36/07—
    • H10P90/1914—
    • H10W10/181—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/912—Charge transfer device using both electron and hole signal carriers

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  • Element Separation (AREA)
CN95107181A 1994-06-03 1995-06-02 用于多层晶片的吸收层和生产该吸收层的方法 Pending CN1119341A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US253657 1988-10-05
US25365794A 1994-06-03 1994-06-03

Publications (1)

Publication Number Publication Date
CN1119341A true CN1119341A (zh) 1996-03-27

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ID=22961174

Family Applications (1)

Application Number Title Priority Date Filing Date
CN95107181A Pending CN1119341A (zh) 1994-06-03 1995-06-02 用于多层晶片的吸收层和生产该吸收层的方法

Country Status (6)

Country Link
US (1) US5892292A (cg-RX-API-DMAC10.html)
JP (2) JPH07335654A (cg-RX-API-DMAC10.html)
KR (1) KR960002685A (cg-RX-API-DMAC10.html)
CN (1) CN1119341A (cg-RX-API-DMAC10.html)
DE (1) DE19519533B4 (cg-RX-API-DMAC10.html)
TW (1) TW274628B (cg-RX-API-DMAC10.html)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6008082A (en) 1995-09-14 1999-12-28 Micron Technology, Inc. Method of making a resistor, method of making a diode, and SRAM circuitry and other integrated circuitry
US5567644A (en) 1995-09-14 1996-10-22 Micron Technology, Inc. Method of making a resistor
US6093624A (en) * 1997-12-23 2000-07-25 Philips Electronics North America Corporation Method of providing a gettering scheme in the manufacture of silicon-on-insulator (SOI) integrated circuits
JP2000323484A (ja) * 1999-05-07 2000-11-24 Mitsubishi Electric Corp 半導体装置及び半導体記憶装置
US6508363B1 (en) 2000-03-31 2003-01-21 Lucent Technologies Slurry container
US20020140030A1 (en) * 2001-03-30 2002-10-03 Mandelman Jack A. SOI devices with integrated gettering structure
US6958264B1 (en) * 2001-04-03 2005-10-25 Advanced Micro Devices, Inc. Scribe lane for gettering of contaminants on SOI wafers and gettering method
US7045885B1 (en) 2004-12-09 2006-05-16 Hewlett-Packard Development Company, L.P. Placement of absorbing material in a semiconductor device

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Also Published As

Publication number Publication date
JP2006324688A (ja) 2006-11-30
DE19519533A1 (de) 1995-12-07
US5892292A (en) 1999-04-06
DE19519533B4 (de) 2009-05-28
KR960002685A (ko) 1996-01-26
TW274628B (cg-RX-API-DMAC10.html) 1996-04-21
JPH07335654A (ja) 1995-12-22

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