CN111868920A - 用于半导体器件封装制造工艺的平坦化 - Google Patents

用于半导体器件封装制造工艺的平坦化 Download PDF

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Publication number
CN111868920A
CN111868920A CN201980019163.5A CN201980019163A CN111868920A CN 111868920 A CN111868920 A CN 111868920A CN 201980019163 A CN201980019163 A CN 201980019163A CN 111868920 A CN111868920 A CN 111868920A
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CN
China
Prior art keywords
substrate
planarizing
liquid
planarization
planarizing liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201980019163.5A
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English (en)
Chinese (zh)
Inventor
陈翰文
S·文哈弗贝克
R·胡克
K·赵
傅博诣
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Applied Materials Inc
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Applied Materials Inc
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Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN111868920A publication Critical patent/CN111868920A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Formation Of Insulating Films (AREA)
CN201980019163.5A 2018-03-15 2019-02-15 用于半导体器件封装制造工艺的平坦化 Pending CN111868920A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862643222P 2018-03-15 2018-03-15
US62/643,222 2018-03-15
PCT/US2019/018154 WO2019177742A1 (fr) 2018-03-15 2019-02-15 Planarisation pour processus de fabrication de boîtier de dispositif à semi-conducteur

Publications (1)

Publication Number Publication Date
CN111868920A true CN111868920A (zh) 2020-10-30

Family

ID=67908338

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980019163.5A Pending CN111868920A (zh) 2018-03-15 2019-02-15 用于半导体器件封装制造工艺的平坦化

Country Status (6)

Country Link
EP (1) EP3766097A4 (fr)
JP (1) JP7258906B2 (fr)
KR (1) KR102521991B1 (fr)
CN (1) CN111868920A (fr)
TW (1) TWI717690B (fr)
WO (1) WO2019177742A1 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11342256B2 (en) 2019-01-24 2022-05-24 Applied Materials, Inc. Method of fine redistribution interconnect formation for advanced packaging applications
IT201900006736A1 (it) 2019-05-10 2020-11-10 Applied Materials Inc Procedimenti di fabbricazione di package
IT201900006740A1 (it) 2019-05-10 2020-11-10 Applied Materials Inc Procedimenti di strutturazione di substrati
US11931855B2 (en) 2019-06-17 2024-03-19 Applied Materials, Inc. Planarization methods for packaging substrates
US11862546B2 (en) 2019-11-27 2024-01-02 Applied Materials, Inc. Package core assembly and fabrication methods
US11257790B2 (en) 2020-03-10 2022-02-22 Applied Materials, Inc. High connectivity device stacking
US20210305082A1 (en) * 2020-03-30 2021-09-30 Canon Kabushiki Kaisha Superstrate and method of making it
US11454884B2 (en) 2020-04-15 2022-09-27 Applied Materials, Inc. Fluoropolymer stamp fabrication method
US11400545B2 (en) 2020-05-11 2022-08-02 Applied Materials, Inc. Laser ablation for package fabrication
US11752519B2 (en) 2020-06-19 2023-09-12 Canon Kabushiki Kaisha Planarization method and photocurable composition
TWI751600B (zh) * 2020-07-03 2022-01-01 財團法人工業技術研究院 封裝結構
US11232951B1 (en) 2020-07-14 2022-01-25 Applied Materials, Inc. Method and apparatus for laser drilling blind vias
US11676832B2 (en) 2020-07-24 2023-06-13 Applied Materials, Inc. Laser ablation system for package fabrication
US11521937B2 (en) 2020-11-16 2022-12-06 Applied Materials, Inc. Package structures with built-in EMI shielding
US11404318B2 (en) 2020-11-20 2022-08-02 Applied Materials, Inc. Methods of forming through-silicon vias in substrates for advanced packaging
US11705365B2 (en) 2021-05-18 2023-07-18 Applied Materials, Inc. Methods of micro-via formation for advanced packaging

Citations (6)

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US20080254215A1 (en) * 2006-11-08 2008-10-16 Tokyo Ohka Kogyo Co., Ltd. Planarizing coating method
JP2011032436A (ja) * 2009-08-05 2011-02-17 Nitto Denko Corp 電子部品封止用のシート状エポキシ樹脂組成物およびそれを用いた電子部品装置
US20140008821A1 (en) * 2012-07-05 2014-01-09 Nitto Denko Corporation Sealing resin sheet, method for producing electronic component package and electronic component package
CN105609429A (zh) * 2014-11-19 2016-05-25 信越化学工业株式会社 半导体装置的制造方法及半导体装置
US20160148887A1 (en) * 2014-11-26 2016-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Device Package with Reduced Thickness and Method for Forming Same
WO2017203888A1 (fr) * 2016-05-26 2017-11-30 アピックヤマダ株式会社 Procédé d'alimentation en résine, dispositif d'alimentation en résine, dispositif de moulage de résine, procédé de durcissement de résine et procédé de moulage de résine

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DE69728999T2 (de) * 1996-11-11 2005-04-28 Catalysts & Chemicals Industries Co. Ltd., Kawasaki Substratglättungsverfahren
JP3456462B2 (ja) 2000-02-28 2003-10-14 日本電気株式会社 半導体装置及びその製造方法
US20060003600A1 (en) * 2004-06-30 2006-01-05 Barns Chris E Contact planarization for integrated circuit processing
US20070032083A1 (en) * 2005-08-05 2007-02-08 Hynix Semiconductor, Inc. Planarization method for manufacturing semiconductor device
FR2905198B1 (fr) * 2006-08-22 2008-10-17 3D Plus Sa Sa Procede de fabrication collective de modules electroniques 3d
KR101111586B1 (ko) * 2007-10-17 2012-03-13 파나소닉 주식회사 실장 구조체
JP4543089B2 (ja) 2008-01-11 2010-09-15 株式会社東芝 半導体装置
US8062424B2 (en) * 2009-11-13 2011-11-22 Freescale Semiconductor, Inc. Method and apparatus for molding substrate
US20120064720A1 (en) * 2010-09-10 2012-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Planarization control for semiconductor devices
US8877567B2 (en) * 2010-11-18 2014-11-04 Stats Chippac, Ltd. Semiconductor device and method of forming uniform height insulating layer over interposer frame as standoff for semiconductor die
WO2013179765A1 (fr) * 2012-05-30 2013-12-05 オリンパス株式会社 Procédés de fabrication de dispositif d'imagerie, et de dispositif à semi-conducteurs
US9349622B2 (en) * 2013-03-12 2016-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for planarization of substrate coatings
US9508623B2 (en) * 2014-06-08 2016-11-29 UTAC Headquarters Pte. Ltd. Semiconductor packages and methods of packaging semiconductor devices

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080254215A1 (en) * 2006-11-08 2008-10-16 Tokyo Ohka Kogyo Co., Ltd. Planarizing coating method
JP2011032436A (ja) * 2009-08-05 2011-02-17 Nitto Denko Corp 電子部品封止用のシート状エポキシ樹脂組成物およびそれを用いた電子部品装置
US20140008821A1 (en) * 2012-07-05 2014-01-09 Nitto Denko Corporation Sealing resin sheet, method for producing electronic component package and electronic component package
CN105609429A (zh) * 2014-11-19 2016-05-25 信越化学工业株式会社 半导体装置的制造方法及半导体装置
US20160148887A1 (en) * 2014-11-26 2016-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Device Package with Reduced Thickness and Method for Forming Same
WO2017203888A1 (fr) * 2016-05-26 2017-11-30 アピックヤマダ株式会社 Procédé d'alimentation en résine, dispositif d'alimentation en résine, dispositif de moulage de résine, procédé de durcissement de résine et procédé de moulage de résine

Also Published As

Publication number Publication date
EP3766097A1 (fr) 2021-01-20
KR20200120766A (ko) 2020-10-21
WO2019177742A1 (fr) 2019-09-19
JP7258906B2 (ja) 2023-04-17
EP3766097A4 (fr) 2022-04-13
TW201946162A (zh) 2019-12-01
TWI717690B (zh) 2021-02-01
JP2021517360A (ja) 2021-07-15
KR102521991B1 (ko) 2023-04-13

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