CN111542921B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN111542921B
CN111542921B CN201880084900.5A CN201880084900A CN111542921B CN 111542921 B CN111542921 B CN 111542921B CN 201880084900 A CN201880084900 A CN 201880084900A CN 111542921 B CN111542921 B CN 111542921B
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Prior art keywords
semiconductor chip
semiconductor device
lead frame
semiconductor
bump
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CN201880084900.5A
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CN111542921A (zh
Inventor
大串直弘
村井亮司
村上贵彦
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Geometry (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
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Abstract

在散热材料(4)之上焊接有具有挠性的半导体芯片(6)。通过按压部件(9、11)的前端从上方对半导体芯片(6)进行按压。由此，能够抑制半导体芯片(6)的凸翘曲。并且，由于能够防止孔洞滞留于焊料(7)内，因此能够提高半导体装置的散热性。

Description

半导体装置
技术领域
本发明涉及半导体装置。
背景技术
就电力用半导体装置而言，为了使由通电产生的热高效地释放，半导体芯片的下表面经由焊料、散热材料、绝缘材料而与冷却机构连接。半导体芯片的上表面经由焊料而与引线框连接。
为了抑制半导体芯片的与电力用半导体装置的电流大容量化相伴的损耗，半导体芯片的厚度薄至50～160μm左右。另外，为了提高散热性能，半导体芯片的面积变大。因此，存在半导体芯片变形而翘曲的问题。为了减小该半导体芯片的翘曲，提出了通过夹头从上方对半导体芯片进行按压而将其焊接于散热材料的方案(例如，参照专利文献1)。
专利文献1：日本特开平9-51058号公报
发明内容
但是，存在以下问题，即，在将引线框焊接于芯片上表面的工序等芯片接合后的加热工序中，芯片下表面的焊料熔化，半导体芯片再次翘曲。由于半导体芯片翘曲，从而在半导体芯片与散热材料之间的焊料内出现孔洞，在该状态下焊料凝固。由此，存在损害半导体装置的散热性的问题。
本发明就是为了解决上述这样的课题而提出的，其目的在于得到能够抑制半导体芯片的翘曲、提高散热性的半导体装置。
本发明涉及的半导体装置的特征在于，具有：散热材料；半导体芯片，其被焊接于所述散热材料之上、具有挠性；以及按压部件，其通过前端从上方对所述半导体芯片进行按压。
发明的效果
在本发明中，通过按压部件的前端对半导体芯片从上方进行按压。由此，能够抑制半导体芯片的凸翘曲。并且，由于能够防止孔洞滞留于焊料内，因此能够提高半导体装置的散热性。
附图说明
图1是表示实施方式1涉及的半导体装置的剖面图。
图2是表示实施方式1涉及的半导体装置的引线框的前端的斜视图。
图3是表示半导体芯片的上表面的俯视图。
图4是表示对比例涉及的半导体装置的剖面图。
图5是表示实施方式2涉及的半导体装置的引线框的前端的剖面图。
图6是表示实施方式2涉及的半导体装置的引线框的前端的斜视图。
图7是表示实施方式3涉及的半导体装置的引线框的前端的侧视图。
图8是表示实施方式4涉及的半导体装置的引线框的前端的侧视图。
图9是表示实施方式5涉及的半导体装置的引线框的前端的侧视图。
图10是表示实施方式6涉及的半导体装置的引线框的前端的侧视图。
图11是表示实施方式6涉及的半导体装置的引线框的前端的斜视图。
图12是表示实施方式7涉及的半导体装置的引线框的前端的侧视图。
图13是表示实施方式7涉及的半导体装置的引线框的前端的斜视图。
图14是表示实施方式8涉及的半导体装置的引线框的前端的剖面图。
图15是表示实施方式9涉及的半导体装置的引线框的前端的剖面图。
图16是表示实施方式10涉及的半导体装置的剖面图。
图17是表示实施方式10涉及的半导体装置的俯视图。
图18是表示实施方式11涉及的半导体装置的俯视图。
具体实施方式
参照附图，对实施方式涉及的半导体装置进行说明。对相同或相应的结构要素标注相同的标号，有时省略重复说明。
实施方式1.
图1是表示实施方式1涉及的半导体装置的剖面图。在冷却机构1之上依次配置有散热材料2、绝缘材料3以及散热材料4。在散热材料4之上隔着凸块5而搭载有半导体芯片6，半导体芯片6通过焊料7而与散热材料4接合。
包围半导体芯片6的壳体8设置于散热材料2之上。引线框9的前端与半导体芯片6的上表面通过焊料10而接合。引线框9的根部固定于壳体8。在引线框9的前端的下表面设置有凸起11。这里，凸起11是将引线框9的前端向半导体芯片6侧弯曲90度而形成的，不经由焊料10而是直接地与半导体芯片6的上表面接触。
图2是表示实施方式1涉及的半导体装置的引线框的前端的斜视图。图3是表示半导体芯片的上表面的俯视图。在半导体芯片6的上表面设置有彼此分离的栅极电极12和发射极电极13。在半导体芯片6的上表面的中央设置有温度感测电路14。
在半导体芯片6的下表面整面形成集电极(collector)电极(electrode)，与此相对，在上表面存在没有电极的部分，因此在没有该电极的区域15，半导体芯片6翘曲成凸状。因此，通过引线框9的前端的凸起11按压半导体芯片6的上表面的没有电极的区域15。半导体芯片6厚度为50～160μm、具有挠性，因此容易通过按压而变形。
接下来，与对比例进行比较，对本实施方式的效果进行说明。图4是表示对比例涉及的半导体装置的剖面图。在对比例中，不存在从上方对半导体芯片6进行按压的凸起11。因此，半导体芯片6翘曲。由此，在焊料7内出现孔洞16，损害半导体装置的散热性。
与此相对，在本实施方式中，通过引线框9的前端的凸起11从上方对半导体芯片6进行按压。由此，能够抑制半导体芯片6的凸翘曲。并且，由于能够防止孔洞滞留于焊料7内，因此能够提高半导体装置的散热性。
实施方式2.
图5是表示实施方式2涉及的半导体装置的引线框的前端的剖面图。图6是表示实施方式2涉及的半导体装置的引线框的前端的斜视图。引线框9的前端的凸起11为两叉形状，避开温度感测电路14而按压半导体芯片6。由此，能够保护温度感测电路14。
实施方式3.
图7是表示实施方式3涉及的半导体装置的引线框的前端的侧视图。引线框9的前端的凸起11为圆弧形状。由此，即使在引线框9倾斜的状态下对半导体芯片6进行按压，在这种情况下也能够防止半导体芯片6倾斜。
实施方式4.
图8是表示实施方式4涉及的半导体装置的引线框的前端的侧视图。引线框9的前端的凸起11是具有弹性的形状。由此，即使在引线框9的高度的波动大的情况下，也能够以恒定负载按压半导体芯片6。
实施方式5.
图9是表示实施方式5涉及的半导体装置的引线框的前端的侧视图。凸起11与引线框9是不同部件，凸起11是由与Si或SiC等半导体芯片6的材料相比硬度低的树脂制成的。由此，能够防止半导体芯片6的上表面的损伤。
实施方式6.
图10是表示实施方式6涉及的半导体装置的引线框的前端的侧视图。图11是表示实施方式6涉及的半导体装置的引线框的前端的斜视图。在凸起11与半导体芯片6之间设置有缓冲材料17。缓冲材料17是在半导体芯片6的制造时使用的聚酰亚胺等树脂。能够通过该缓冲材料17而防止引线框9与半导体芯片6之间的摩擦，减轻由热循环引起的对半导体芯片的损伤。
实施方式7.
图12是表示实施方式7涉及的半导体装置的引线框的前端的侧视图。图13是表示实施方式7涉及的半导体装置的引线框的前端的斜视图。引线框9的一部分是弹簧形状9a。由此，能够缓和对半导体芯片6的应力。
实施方式8.
图14是表示实施方式8涉及的半导体装置的引线框的前端的剖面图。以在引线框9与半导体芯片6之间设置了具有弹性的衬垫18的状态进行焊接。由于经由该衬垫18而按压半导体芯片6，因此即使引线框9的高度发生波动，也能够均匀地按压半导体芯片6。
实施方式9.
图15是表示实施方式9涉及的半导体装置的引线框的前端的剖面图。第1凸块5a配置于半导体芯片6的下表面的四角与散热材料4之间。第2凸块5b配置于半导体芯片6的下表面的中央与散热材料4之间。将第2凸块5b的高度设定得比第1凸块5a的高度低。由此，在按压半导体芯片6时成为下凸形状，能够通过第2凸块5b的高度而保证焊料10的最薄部分的厚度。其它结构及效果与实施方式1等相同。
实施方式10.
图16是表示实施方式10涉及的半导体装置的剖面图。图17是表示实施方式10涉及的半导体装置的俯视图。并排配置有多个半导体芯片6。壳体8具有多个通过导线19而与多个半导体芯片6各自连接的中继端子20。在壳体8设置有按压梁21。作为实施方式1等的引线框9的替代物，按压梁21作为从上方对半导体芯片6进行按压的按压部件起作用。这样的与壳体8一体化的按压梁21能够通过壳体8的形状变更而形成。
实施方式11.
图18是表示实施方式11涉及的半导体装置的俯视图。与多个半导体芯片6各自进行导线连接的多个中继端子20汇集在一起地并排配置。由此，与多个中继端子20分为两块地配置的实施方式10相比，中继端子20间的距离变短，能够使控制基板变小。其它结构及效果与实施方式10相同。
按压梁21成为在多个中继端子20的汇集体的两侧从壳体8朝向半导体芯片6而凸出的结构。在这种情况下，如图18中虚线所包围的那样，在多个中继端子20的引线切割时需要供刀刃进入的空间。
此外，半导体芯片6不限于由硅形成，也可以由与硅相比带隙大的宽带隙半导体形成。宽带隙半导体例如是碳化硅、氮化镓类材料或金刚石。由这样的宽带隙半导体形成的半导体芯片6由于耐电压性、容许电流密度高，因此能够小型化。通过使用该小型化的半导体芯片6，从而组装有该半导体芯片6的半导体装置也能够小型化。另外，由于半导体芯片6的耐热性高，因此能够使散热器的散热鳍片小型化，能够使水冷部空冷化，因而能够使半导体装置进一步小型化。另外，由于半导体芯片6的电力损耗低且高效，因此能够使半导体装置高效化。
标号的说明
4散热材料，5a第1凸块，5b第2凸块，6半导体芯片，7、10焊料，8壳体，9引线框(按压部件)，9a弹簧形状，11凸起(按压部件)，12栅极电极(电极)，13发射极电极(电极)，14温度感测电路，17缓冲材料，18衬垫，20中继端子，21按压梁(按压部件)

Claims (9)

1.一种半导体装置，其特征在于，具有：
散热材料；
半导体芯片，其被焊接于所述散热材料之上、具有挠性；以及
按压部件，其通过前端从上方对所述半导体芯片进行按压，
在所述半导体芯片的上表面设置有彼此分离的多个电极，
所述按压部件对所述半导体芯片的上表面的没有所述多个电极的区域进行按压。
2.根据权利要求1所述的半导体装置，其特征在于，
所述按压部件具有引线框和凸起，该引线框被焊接于所述半导体芯片的上表面，该凸起设置于所述引线框的前端的下表面，
在所述半导体芯片的所述上表面的中央设置有温度感测电路，
所述凸起为两叉形状，避开所述温度感测电路而按压所述半导体芯片。
3.根据权利要求1所述的半导体装置，其特征在于，
所述按压部件具有引线框和凸起，该引线框被焊接于所述半导体芯片的上表面，该凸起设置于所述引线框的前端的下表面，
所述凸起具有弹性。
4.根据权利要求1所述的半导体装置，其特征在于，
所述按压部件具有引线框和凸起，该引线框被焊接于所述半导体芯片的上表面，该凸起设置于所述引线框的前端的下表面，
所述凸起与所述引线框是不同部件，所述凸起是由与所述半导体芯片的材料相比硬度低的树脂制成的。
5.根据权利要求2至4中任一项所述的半导体装置，其特征在于，
所述凸起为圆弧形状。
6.根据权利要求1所述的半导体装置，其特征在于，
在所述按压部件的所述前端与所述半导体芯片之间设置有缓冲材料。
7.根据权利要求1至4、6中任一项所述的半导体装置，其特征在于，
所述按压部件的一部分为弹簧形状。
8.根据权利要求1所述的半导体装置，其特征在于，具有：
第1凸块，其配置于所述半导体芯片的下表面的四角与所述散热材料之间；以及
第2凸块，其配置于所述半导体芯片的所述下表面的中央与所述散热材料之间，
所述第2凸块的高度比所述第1凸块的高度低。
9.根据权利要求1至4、6、8中任一项所述的半导体装置，其特征在于，
所述半导体芯片由宽带隙半导体形成。
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Families Citing this family (2)

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KR101906502B1 (ko) 2017-11-30 2018-10-10 삼중테크 주식회사 흡착식 냉동기의 냉방 용량 및 동파 방지 제어 방법
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101073151A (zh) * 2004-12-20 2007-11-14 半导体元件工业有限责任公司 具有增强散热性的半导体封装结构
JP2015050340A (ja) * 2013-09-02 2015-03-16 株式会社ジェイテクト 半導体装置
CN104600038A (zh) * 2013-10-31 2015-05-06 三菱电机株式会社 半导体装置
CN205609512U (zh) * 2015-11-18 2016-09-28 意法半导体公司 半导体封装体
WO2016163237A1 (ja) * 2015-04-10 2016-10-13 富士電機株式会社 半導体装置
CN206059379U (zh) * 2015-08-26 2017-03-29 赛米控电子股份有限公司 功率电子子模块

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4754912A (en) * 1984-04-05 1988-07-05 National Semiconductor Corporation Controlled collapse thermocompression gang bonding
JPH0951058A (ja) 1995-08-07 1997-02-18 Mitsubishi Electric Corp 半導体装置，及び半導体装置の製造方法，及び製造装置
JP3934565B2 (ja) * 2003-02-21 2007-06-20 富士通株式会社 半導体装置
CN100435324C (zh) * 2004-12-20 2008-11-19 半导体元件工业有限责任公司 具有增强散热性的半导体封装结构
US8354740B2 (en) * 2008-12-01 2013-01-15 Alpha & Omega Semiconductor, Inc. Top-side cooled semiconductor package with stacked interconnection plates and method
EP3633723B1 (en) * 2009-05-14 2023-02-22 Rohm Co., Ltd. Semiconductor device
JP5598386B2 (ja) * 2011-03-10 2014-10-01 株式会社デンソー 半導体装置
JP2014086536A (ja) * 2012-10-23 2014-05-12 Renesas Electronics Corp 半導体装置および半導体装置の製造方法
JP6012533B2 (ja) 2013-04-05 2016-10-25 三菱電機株式会社 電力用半導体装置
US9147631B2 (en) * 2013-04-17 2015-09-29 Infineon Technologies Austria Ag Semiconductor power device having a heat sink
JP2015144216A (ja) * 2014-01-31 2015-08-06 株式会社東芝 半導体装置及びその製造方法
JP6257478B2 (ja) * 2014-09-02 2018-01-10 三菱電機株式会社 電力用半導体装置
JP6479532B2 (ja) * 2015-03-30 2019-03-06 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US10256207B2 (en) * 2016-01-19 2019-04-09 Jmj Korea Co., Ltd. Clip-bonded semiconductor chip package using metal bumps and method for manufacturing the package
JP2018092968A (ja) * 2016-11-30 2018-06-14 ルネサスエレクトロニクス株式会社 半導体装置、ｒｃ−ｉｇｂｔ及び半導体装置の製造方法
US10825757B2 (en) * 2016-12-19 2020-11-03 Nexperia B.V. Semiconductor device and method with clip arrangement in IC package
US11183479B2 (en) * 2017-03-30 2021-11-23 Mitsubishi Electric Corporation Semiconductor device, method for manufacturing the same, and power conversion device
JP6885175B2 (ja) * 2017-04-14 2021-06-09 富士電機株式会社 半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101073151A (zh) * 2004-12-20 2007-11-14 半导体元件工业有限责任公司 具有增强散热性的半导体封装结构
JP2015050340A (ja) * 2013-09-02 2015-03-16 株式会社ジェイテクト 半導体装置
CN104600038A (zh) * 2013-10-31 2015-05-06 三菱电机株式会社 半导体装置
WO2016163237A1 (ja) * 2015-04-10 2016-10-13 富士電機株式会社 半導体装置
CN206059379U (zh) * 2015-08-26 2017-03-29 赛米控电子股份有限公司 功率电子子模块
CN205609512U (zh) * 2015-11-18 2016-09-28 意法半导体公司 半导体封装体

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