CN111384158A - 结晶性氧化物半导体、半导体装置及半导体系统 - Google Patents
结晶性氧化物半导体、半导体装置及半导体系统 Download PDFInfo
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- CN111384158A CN111384158A CN201911364732.8A CN201911364732A CN111384158A CN 111384158 A CN111384158 A CN 111384158A CN 201911364732 A CN201911364732 A CN 201911364732A CN 111384158 A CN111384158 A CN 111384158A
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- oxide semiconductor
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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Abstract
本发明提供一种对要求散热性的半导体装置等有用的、晶体品质优异的结晶性氧化物半导体、半导体装置及半导体系统。在形成至少包括第一晶轴和第二晶轴的结晶性氧化物半导体时,通过使第二边比第一边短,使第一晶轴方向的线热膨胀系数比第二晶轴方向的线热膨胀系数小,使第一边方向与第一晶轴方向平行或大致平行,使第二边方向与第二晶轴方向平行或大致平行,从而得到一种结晶性氧化物半导体,该结晶性氧化物半导体至少包括第一边和比第一边短的第二边,第一晶轴方向的线热膨胀系数比第二晶轴方向的线热膨胀系数小,第一边方向与第一晶轴方向平行或大致平行,第二边方向与第二晶轴方向平行或大致平行。
Description
技术领域
本发明涉及对半导体装置有用的结晶性氧化物半导体及其半导体装置。
背景技术
以往,在异种基板上进行晶体生长时,存在产生裂缝和晶格缺陷的问题。针对这个问题,正在研究使基板与膜的晶格常数和热膨胀系数匹配等。另外,在发生不匹配的情况下,也研究了ELO(横向外延生长)这样的成膜手法等。
在专利文献1中,记载了在异种基板上形成缓冲层,在所述缓冲层上使氧化锌类半导体层进行晶体生长的方法。在专利文献2中,记载了在异种基板上形成纳米点的掩膜,接着形成单晶半导体材料层。在非专利文献1中,记载了在蓝宝石上,经由GaN的纳米柱使GaN进行晶体生长的手法。在非专利文献2中,记载了使用周期性的SiN中间层,使GaN在Si(111)上晶体生长,从而减少凹洞等缺陷的手法。
但是,无论哪种技术,都会因成膜速度差、基板产生裂缝、位移、弯曲等现象,另外,外延膜产生位移或裂缝等现象,难以得到高品质的外延膜,在基板的宽口径化和外延膜的厚膜化中也产生障碍。
另外,作为能够实现高耐压、低损耗及高耐热的下一代开关元件,使用带隙宽的氧化镓(Ga2O3)的半导体装置备受瞩目,期望应用于逆变器等电用半导体装置。而且,因其带隙宽,作为LED和传感器等受发光装置的应用也被期待。该氧化镓根据非专利文献3,通过分别或组合混晶铟和铝从而能够控制带隙,构成作为InAlGaO类半导体极具魅力的材料系统。这里,所谓InAlGaO类半导体示出InXAlYGaZO3(0≤X≤2、0≤Y≤2、0≤Z≤2、X+Y+Z=1.5~2.5),能够作为内部包括氧化镓的同一材料系统而涵盖所有。
然而,由于氧化镓的再稳定相是β-gallia结构,如果不使用特殊的成膜法,则难以形成刚玉结构的晶体膜,晶体品质等方面仍存在许多问题。对此,目前已经对具有刚玉结构的晶体性半导体的成膜进行了一些研究。
在专利文献3中,记载了使用镓或铟的溴化物或碘化物,通过雾化CVD法,制造氧化物晶体薄膜的方法。在专利文献4~6中,记载了在具有刚玉型晶体结构的基底基板上层叠有具有刚玉型晶体结构的半导体层和具有刚玉型晶体结构的绝缘膜的多层结构体。
另外,最近,正如专利文献7~9及非专利文献4所记载的那样,正在研究使刚玉结构的氧化镓膜进行ELO生长等。根据专利文献7~9所记载的方法,能够得到优质的刚玉结构的氧化镓膜,但是即使以利用了专利文献7所记载的热膨胀系数差的ELO成膜手法等,实际试着调查晶体膜时,存在小面生长的倾向,还存在由于该小面生长而引起的位移和裂缝等问题,在应用于半导体装置方面,还远远不能令人满意。
另外,专利文献3~9都是与本申请人的专利或专利申请有关的公报。
专利文献1:日本专利特开2010-232623号公报
专利文献2:日本专利特表2010-516599号公报
专利文献3:日本专利第5397794号
专利文献4:日本专利第5343224号
专利文献5:日本专利第5397795号
专利文献6:日本专利特开2014-72533号公报
专利文献7:日本专利特开2016-98166号公报
专利文献8:日本专利特开2016-100592号公报
专利文献9:日本专利特开2016-100593号公报
非专利文献1:Kazuhide Kusakabe.,et al.,“Overgrowth of GaN layer on GaNnano-columns by RF-molecular beam epitaxy”,Journal of Crystal Growth 237-239(2002)988-992(Kazuhide Kusakabe等,“通过RF-分子束外延使GaN纳米柱上GaN层过度生长”,《晶体生长杂志》,237-239(2002)988-992)
非专利文献2:K.Y.Zang.,et al.,”Defect reduction by periodic SiNxinterlayers in gallium nitride grown on Si(111)”,Journal of Applied Physics101,093502(2007)(K.Y.Zang.等,“通过在Si(111)上生长的氮化镓中的周期性SiNx中间层减少缺陷”,《应用物理学杂志》101,093502(2007))
非专利文献3:金子健太郎、「コランダム構造酸化ガリウム系混晶薄膜の成長と物性」、京都大学博士論文、平成25年3月(金子健太郎、《刚玉结构氧化镓类混晶薄膜的生长和物性》、京都大学博士论文、平成25年3月)
非专利文献4:高塚章夫、織田真也、金子健太郎、藤田静雄、人羅俊実,“ミストエピタキシー法によるα型酸化ガリウムの横方向選択成長(ELO)”,2015年第62回応用物理学会春季学術講演会,東海大学,(2015年3月11日-14日)13a-P18-12.(高冢章夫、织田真也、金子健太郎、藤田静雄、人罗俊实、“根据雾化外延法的α型氧化镓的横向选择生长(ELO)”、2015年第62次应用物理学会春季学术讲演会、东海大学、(2015年3月11日-14日)13a-P18-12)
发明内容
本发明的目的在于提供一种对要求散热性的半导体装置等有用的、晶体品质优异的结晶性氧化物半导体。
本发明人等为了达成上述目的,进行了深入研究的结果发现如下:在形成至少包括第一晶轴和第二晶轴的结晶性氧化物半导体时,通过使第二边比第一边短,使第一晶轴方向的线热膨胀系数比第二晶轴方向的线热膨胀系数小,使第一边方向与第一晶轴方向平行或大致平行,使第二边方向与第二晶轴方向平行或大致平行,从而裂缝锐减,并且,由此得到的结晶性氧化物半导体不仅晶体品质优异,热分散性也优异,对要求散热性的半导体装置有用,能够一举解决上述现有的问题。
另外,本发明人等在得到上述见解之后,经过反复研究,终于完成了本发明。
即,本发明涉及以下发明。
[1]一种结晶性氧化物半导体,至少包括第一晶轴和第二晶轴,其特征在于,所述结晶性氧化物半导体至少包括第一边和比第一边短的第二边,所述结晶性氧化物半导体的第一晶轴方向的线热膨胀系数比第二晶轴方向的线热膨胀系数小,所述结晶性氧化物半导体的第一边方向与第一晶轴方向平行或大致平行,所述结晶性氧化物半导体的第二边方向与第二晶轴方向平行或大致平行。
[2]根据所述[1]所述的结晶性氧化物半导体,其中,以含包镓的金属氧化物为主要成分。
[3]根据所述[1]或[2]所述的结晶性氧化物半导体,其中,以具有刚玉结构的金属氧化物为主要成分。
[4]根据所述[3]所述的结晶性氧化物半导体,其中,所述金属氧化物至少包括镓、铟、铑或铱。
[5]根据所述[3]所述的结晶性氧化物半导体,其中,所述金属氧化物包括镓、铟和/或铝。
[6]根据所述[1]~[5]中任一项所述的结晶性氧化物半导体,其中,第一边和第二边均以直线表示。
[7]根据所述[1]~[6]中任一项所述的结晶性氧化物半导体,其中,其为膜状。
[8]根据所述[7]所述的结晶性氧化物半导体,其中,具有刚玉结构,且所述膜的主面为a面、m面或r面。
[9]根据所述[7]所述的结晶性氧化物半导体,其中,具有刚玉结构,所述膜的主面为c面,并且具有0.2°以上的偏角。
[10]一种半导体装置,至少具备半导体层和电极,其中,所述半导体层包括所述[1]~[9]中任一项所述的结晶性氧化物半导体。
[11]根据所述[10]所述的半导体装置,其中,其为功率器件。
[12]根据所述[10]所述的半导体装置,其中,其为功率模块、逆变器或转换器。
[13]根据所述[10]所述的半导体装置,其中,其为功率卡。
[14]根据所述[13]所述的半导体装置,其中,还包括冷却器和绝缘部件,在所述半导体层的两侧至少经由所述绝缘部件分别设置有所述冷却器。
[15]根据[14]所述的半导体装置,其中,在所述半导体层的两侧分别设置有散热层,在所述散热层的外侧至少经由所述绝缘部件分别设置有所述冷却器。
[16]一种半导体系统,具备半导体装置,其中,所述半导体装置为所述[10]~[15]中任一项所述的半导体装置。
本发明的结晶性氧化物半导体的晶体品质优异,对要求散热性的半导体装置等有用。
附图说明
图1是本发明优选使用的成膜装置的概略结构图。
图2是与本发明优选使用的图1不同方案的成膜装置(雾化CVD)的概略结构图。
图3是示出电源系统的优选一例的示意图。
图4是示出系统装置的优选一例的示意图。
图5是示出电源装置的电源电路图的优选一例的示意图。
图6是示出实施例中的显微镜观察结果的图。
图7是示出比较例中的显微镜观察结果的图。
图8是示出在实施例中得到的结晶性氧化物半导体的半导体装置中的热分布的模拟的评价结果的图。此外,在图中,箭头表示热移动方向。
图9是示出在比较例中得到的结晶性氧化物半导体的半导体装置中的热分布的模拟的评价结果的图。此外,在图中,箭头表示热移动方向。
图10是示出肖特基势垒二极管(SBD)的优选一例的示意图。
图11是示出高电子迁移率晶体管(HEMT)的优选一例的示意图。
图12是示出金属氧化膜半导体场效应晶体管(MOSFET)的优选一例的示意图。
图13是示出结型场效应晶体管(JFET)的优选一例的示意图。
图14是示出绝缘栅双极型晶体管(IGBT)的优选一例的示意图。
图15是示出发光元件(LED)的优选一例的示意图。
图16是示出发光元件(LED)的优选一例的示意图。
图17是示出结势垒肖特基二极管(JBS)的优选一例的示意图。
图18是示出结势垒肖特基二极管(JBS)的优选一例的示意图。
图19是示出功率卡的优选一例的示意图。
图20是示出本发明的金属氧化膜半导体场效应晶体管(MOSFET)的优选一例的示意图。
具体实施方式
本发明的结晶性氧化物半导体是至少包括第一晶轴和第二晶轴的结晶性氧化物半导体,其特征在于,至少包括第一边和比第一边短的第二边,第一晶轴方向的线热膨胀系数比第二晶轴方向的线热膨胀系数小,第一边方向与第一晶轴方向平行或大致平行,第二边方向与第二晶轴方向平行或大致平行。此外,“晶轴”是指为了系统地表示晶面和对于旋转的对称性等而从晶体结构导出的坐标轴。另外,“第一边”可以是直线也可以是曲线,但在本发明中,为了使其与晶轴的关系性更好,优选为直线。另外,“第二边”也可以是直线也可以是曲线,但在本发明中,为了使其与晶轴的关系性更好,优选为直线。另外,“线热膨胀系数”根据JIS R 3102(1995)测定。“边方向”是指构成特定的形状的边的方向。“大致平行”表示可以是不完全平行的,并且可以是稍有偏差的方式(例如,它们形成的角可以是大于0°且10°以下的方式)。
优选地,所述结晶性氧化物半导体包括镓,更优选地,包括以氧化镓及其混晶为主要成分。另外,所述结晶性氧化物半导体的晶体结构等并不特别限定,但在本发明中,优选地,所述结晶性氧化物半导体包括以具有刚玉结构的金属氧化物为主要成分。所述金属氧化物并不特别限定,优选地,至少包括元素周期表第4周期~第6周期的一种或两种以上的金属,更优选地,至少包括镓、铟、铑或铱,最优选地,包括镓。另外,在本发明中,优选地,所述金属氧化物包括镓、铟或/和铝。作为包括镓的所述金属氧化物,例如,可以举出α-Ga2O3或其混晶等。包括这种优选的金属氧化物为主要成分的结晶性氧化物半导体的结晶性和散热性变得更优异,半导体特性也可变得更优异。此外,所述“主要成分”是指按照结晶性氧化物半导体中的组成比,包括50%以上所述金属氧化物,优选地包括70%以上,更优选地包括90%以上。例如,在所述金属氧化物为α-Ga2O3的情况下,所述结晶性氧化物半导体的金属元素中的镓的原子比以0.5以上的比例包含α-Ga2O3即可。在本发明中,优选地,所述结晶性氧化物半导体的金属元素中的镓的原子比为0.7以上,更优选地,为0.8以上。此外,所述结晶性氧化物半导体可以是单晶,也可以是多晶。另外,所述结晶性氧化物半导体通常为膜状,但只要不阻碍本发明的目的,则不特别限定,也可以是板状,还可以是片状。
所述结晶性氧化物半导体还可以包括掺杂剂。所述掺杂剂只要不阻碍本发明的目的,则不特别限定。可以是n型掺杂剂,也可以是p型掺杂剂。作为所述n掺杂剂,例如可以举出锡、锗、硅、钛、锆、钒或铌等。掺杂剂的浓度可以适当地设定,具体地,例如可以是约1×1016/cm3~1×1022/cm3,另外还可以将掺杂剂的浓度例如设为约1×1017/cm3以下的低浓度。另外,进而,根据本发明,还可以以约1×1020/cm3以上的高浓度含有掺杂剂。
所述结晶性氧化物半导体例如可以通过以下优选的成膜方法得到。
即,使用至少包括第一晶轴和第二晶轴的晶体基板,在所述结晶性氧化物半导体中,使第二边比第一边短,使第一晶轴方向的线热膨胀系数比第二晶轴方向的线热膨胀系数小,使第一边方向与第一晶轴方向平行或大致平行,使第二边方向与第二晶轴方向平行或大致平行,通过雾化CVD法或雾化外延法进行外延晶体生长,从而能够得到结晶性氧化物半导体。
<晶体基板>
所述晶体基板只要不阻碍本发明的目的,则不特别限定,也可以是公知的基板。可以是绝缘体基板,也可以是导电性基板,还可以是半导体基板。可以是单晶基板,也可以是多晶基板。作为所述晶体基板,例如可以举出包括以具有刚玉结构的结晶物为主要成分的基板。另外,所述“主要成分”是指按照基板中的组成比,包括所述晶体物50%以上,优选地,包括70%以上,更优选地,包括90%以上。作为具有所述刚玉结构的晶体基板,例如可以举出蓝宝石基板、α型氧化镓基板等。
在本发明中,所述晶体基板优选为蓝宝石基板。作为所述蓝宝石基板,例如可以举出c面蓝宝石基板、m面蓝宝石基板、a面蓝宝石基板、r面蓝宝石基板等。另外,所述蓝宝石基板还可以具有偏角。所述偏角不特别限定,例如为0.01°以上,优选为0.2°以上,更优选为0.2°~12°。所述蓝宝石基板的晶体生长面优选为a面、m面或r面,还优选为具有0.2°以上的偏角的c面蓝宝石基板。
此外,所述晶体基板的厚度并不特别限定,通常为10μm~20mm,更优选为10~1000μm。
另外,所述晶体基板优选为至少包括第一晶轴和第二晶轴的形状,或者形成与第一晶轴和第二晶轴对应的槽。通过使用这种晶体基板,从而在所述结晶性氧化物半导体中,能够容易地调节成为第二边比第一边短、第一晶轴方向的线热膨胀系数比第二晶轴方向的线热膨胀系数小、第一边方向与第一晶轴方向平行或大致平行、第二边方向与第二晶轴方向平行或大致平行,能够容易地得到所述结晶性氧化物半导体。
另外,在本发明中,还可以使用ELO掩膜,在所述结晶性氧化物半导体中,以容易成为第二边比第一边短、第一晶轴方向的线热膨胀系数比第二晶轴方向的线热膨胀系数小、第一边方向与第一晶轴方向平行或大致平行、第二边方向与第二晶体轴方向平行或大致平行的方式控制晶体生长的方向等。
作为所述晶体基板的优选形状,例如可以举出三角形、四角形(例如长方形或梯形等)、五角形或六角形等多角形、U字形、倒U字形、L字形或コ字形等。
此外,在本发明中,还可以在所述晶体基板上设置缓冲层、应力缓和层等其他层。作为缓冲层,可以举出由所述晶体基板或具有与所述结晶性氧化物半导体的晶体结构相同的晶体结构的金属氧化物构成的层等。另外,作为应力缓和层,可以举出ELO掩膜层等。
所述外延晶体生长的手段只要不阻碍本发明的目的,则不特别限定,可以是公知的手段。作为所述外延晶体生长手段,例如可以举出CVD法、MOCVD法、MOVPE法、雾化CVD法、雾化外延法、MBE法、HVPE法、脉冲生长法或ALD法等。在本发明中,优选地,所述外延晶体生长手段为雾化CVD法或雾化外延法。
在所述的雾化CVD法或雾化外延法中,通过使含有金属的原料溶液雾化(雾化工序),使液滴飘浮,将得到的雾化液滴用载气运送到所述晶体基板附近(运送工序),接着,使所述雾化液滴产生热反应(成膜工序)来进行。
(原料溶液)
原料溶液作为成膜原料包含金属,只要可雾化则不特别限定,可以包含无机材料,也可以包含有机材料。所述金属既可以是金属单体,也可以是金属化合物,只要不阻碍本发明的目的,则不特别限定,可以举出选自镓(Ga)、铱(Ir)、铟(In)、铑(Rh)、铝(Al)、金(Au)、银(Ag)、铂(Pt)、铜(Cu)、铁(Fe)、锰(Mn)、镍(Ni)、钯(Pd)、钴(Co)、钌(Ru)、铬(Cr)、钼(Mo)、钨(W)、钽(Ta)、锌(Zn)、铅(Pb)、铼(Re)、钛(Ti)、锡(Sn)、镁(Mg)、钙(Ca)及锆(Zr)中的一种或两种以上的金属等,在本发明中,所述金属优选为至少包括元素周期表第4周期~第6周期的一种或两种以上的金属,更优选为至少包括镓、铟、铑或铱。另外,在本发明中,所述金属还优选包括镓、铟或/和铝。通过使用这种优选金属,能够成膜可以更优选用于半导体装置等的所述结晶性氧化物半导体。
在本发明中,作为所述原料溶液,能够优选使用将所述金属以络合物或盐的形态溶解或分散到有机溶剂或水中的物质。作为络合物的形态,例如可以举出乙酰丙酮络合物、羰基络合物、胺络合物、氢化物络合物等。作为盐的形态,例如可以举出有机金属盐(例如金属醋酸盐、金属草酸盐、金属柠檬酸盐等)、硫化金属盐、硝化金属盐、金属磷酸盐、卤化金属盐(例如氯化金属盐、溴化金属盐、碘化金属盐等)等。
关于所述原料溶液的溶剂,只要不阻碍本发明的目的,则不特别限定,可以是水等无机溶剂,也可以是乙醇等有机溶剂,还可以是无机溶剂和有机溶剂的混合溶剂。在本发明中,优选所述溶剂包括水。
另外,也可以在所述原料溶液中混合氢卤酸、氧化剂等添加剂。作为所述氢卤酸,例如可以举出氢卤酸、盐酸、氢碘酸等。作为所述氧化剂,例如可以举出过氧化氢(H2O2)、过氧化钠(Na2O2)、过氧化钡(BaO2)、过氧化苯甲酰(C6H5CO)2O2等过氧化物、次氯酸(HClO)、过氯酸、硝酸、臭氧水、过醋酸和硝基苯等有机过氧化物等。
所述原料溶液中还可以包括掺杂剂。所述掺杂剂只要不阻碍本发明的目的,则不特别限定。作为所述掺杂剂,例如可以举出锡、锗、硅、钛、锆、钒或铌等n型掺杂剂或p型掺杂剂。掺杂剂的浓度通常可以为1×1016/cm3~1×1022/cm3,另外,也可以将掺杂剂的浓度例如设为约1×1017/cm3以下的低浓度。另外,进而,根据本发明,还可以以约1×1020/cm3以上的高浓度含有掺杂剂。
(雾化工序)
所述雾化工序调整包括金属的原料溶液,使所述原料溶液雾化,使液滴飘浮,产生雾化液滴。所述金属的配合比例并不特别限定,相对于全部原料溶液,优选为0.0001mol/L~20mol/L。雾化手段只要能够雾化所述原料溶液则不特别限定,也可以是公知的雾化手段,但在本发明中,优选为使用超声波振动的雾化手段。本发明中使用的雾漂浮在空中,例如不是像喷雾那样进行喷射的雾,而是更优选为初速度为零,可作为飘浮在空间中的气体进行运送的雾。雾的液滴尺寸并不特别限定,可以是数毫米左右的液滴,优选为50μm以下,更优选为1~10μm。
(运送工序)
在所述运送工序中,通过所述载气向所述基体运送所述雾化液滴。作为载气的种类,只要不阻碍本发明的目的则并不特别限定,例如可以举出氧、臭氧、非活性气体(例如氮、氩等)或还原气体(氢气、合成气体等)等作为优选例子。另外,载气的种类可以为一种,但也可以是两种以上,还可以进一步将使载气浓度变化的稀释气体(例如10倍稀释气体等)等作为第二载气使用。另外,载气的供给部位不仅有一个,也可以有两个以上。载气的流量并不特别限定,优选为1LPM以下,更优选为0.1~1LPM。
(成膜工序)
在成膜工序中,使所述雾化液滴产生反应,在所述晶体基板上成膜。所述反应只要是从所述雾化液滴形成膜的反应,则并不特别限定,在本发明中,优选为热反应。所述热反应只要利用热使所述雾化液滴发生反应即可,反应条件也是只要不阻碍本发明的目的,则并不特别限定。在本工序中,通常以原料溶液的溶剂的蒸发温度以上的温度进行所述热反应,优选为不过高的温度以下,更优选为650℃以下。另外,热反应只要不阻碍本发明的目的,则可以在真空下、非氧气氛下、还原气体氛围下及氧气氛下中的任意氛围下进行,另外,还可以在大气压下、加压下及减压下的任意条件下进行,本发明中,在大气压下进行,蒸发温度的计算变得更简单,设备等也能够简化,从这些方面考虑因此优选。另外,通过调整成膜时间,能够设定膜厚。
下面,使用附图对本发明优选使用的成膜装置19进行说明。图1的成膜装置19具备:供给载气的载气源22a、用于调节从载气源22a送出的载气的流量的流量调节阀23a、供给载气(稀释)的载气(稀释)源22b、用于调节从载气(稀释)源22b送出的载气(稀释)的流量的流量调节阀23b、收容有原料溶液24a的雾化发生源24、装有水25a的容器25、安装在容器25的底面的超声波振子26、成膜室30、连接从雾化发生源24至成膜室30的石英制的供给管27、以及在成膜室30内设置的热板(加热器)28。在热板28上设置有基板20。
而且,如图1所示,将原料溶液24a收容在雾化产生源24内。接着,使用基板20,设置在热板28上,使热板28工作,使成膜室30内的温度升温。接着,打开流量调节阀23(23a、23b),从载气源22(22a、22b)向成膜室30内供给载气,用载气充分置换成膜室30的气氛之后,分别调节载气的流量和载气(稀释)的流量。接着,通过使超声波振子26振动,使该振动通过水25a向原料溶液24a传递,从而使原料溶液24a微粒化并生成雾化液滴24b。该雾化液滴24b通过载气被导入到成膜室30内,并被运送到基板20,并且,在大气压下在成膜室30内雾化液滴24b发生热反应,在基板20上形成膜。
另外,还优选使用图2所示的雾化CVD装置(成膜装置)19。图2的雾化CVD装置19具备:载置基板20的基座21、供给载气的载气供给单元22a、用于调节从载气供给单元22a送出的载气的流量的流量调节阀23a、供给载气(稀释)的载气(稀释)供给单元22b、用于调节从载气(稀释)供给单元22b送出的载气的流量的流量调节阀23b、收容有原料溶液24a的雾化发生源24、装有水25a的容器25、安装在容器25的底面的超声波振子26、由内径40mm的石英管构成的供给管27、设置在供给管27的周边部的加热器28、以及排出热反应后的雾、液滴及排气气体的排气口29。基座21由石英构成,载置基板20的面从水平面倾斜。作为成膜室的供给管27和基座21均由石英制作,从而抑制在基板20上形成的膜内混入来自装置的杂质。该雾化CVD装置19能够与所述的成膜装置19同样处理。
如果使用所述的优选的成膜装置,则能够在所述晶体基板的晶体生长面上更容易形成所述结晶性氧化物半导体。此外,所述结晶性氧化物半导体通常通过外延晶体生长形成。
所述结晶性氧化物半导体对半导体装置、特别对功率器件有用。作为使用所述结晶性氧化物半导体形成的半导体装置,可以举出MIS、HEMT等晶体管、TFT、利用半导体-金属接合的肖特基势垒二极管、JBS、与其他P层组合的PN或PIN二极管、受发光元件等。在本发明中,所述结晶性氧化物半导体可以根据期望与所述晶体基板剥离等,用于半导体装置。
另外,所述半导体装置还优选用于电极形成在半导体层的单面侧的横向型元件(横向型器件)和在半导体层的表里两面侧分别具有电极的纵向型元件(纵向型器件)的任意一种,在本发明中,其中优选用于纵向型器件。作为所述半导体装置的优选例子,例如,肖特基势垒二极管(SBD)、结势垒肖特基二极管(JBS)、金属半导体场效应晶体管(MESFET)、高电子迁移率晶体管(HEMT)、金属氧化膜半导体场效应晶体管(MOSFET)、静电感应晶体管(SIT)、结型场效应晶体管(JFET)、绝缘栅双极型晶体管(IGBT)或发光二极管(LED)等。
下面,使用附图说明将本发明的结晶性氧化物半导体应用于n型半导体层(n+型半导体或n-半导体层等)时的所述半导体装置的优选例子,本发明并不限定于这些例子。
图10示出本发明所涉及的肖特基势垒二极管(SBD)的一例。图10的SBD具备n-型半导体层101a、n+型半导体层101b、肖特基电极105a及欧姆电极105b。
肖特基电极及欧姆电极的材料可以是公知的电极材料,作为所述电极材料,例如可以举出Al、Mo、Co、Zr、Sn、Nb、Fe、Cr、Ta、Ti、Au、Pt、V、Mn、Ni、Cu、Hf、W、Ir、Zn、Pd、In、Nd或Ag等金属或这些的合金、氧化锡、氧化锌、氧化铼、氧化铟、氧化铟锡(ITO)、氧化锌铟(IZO)等金属氧化物导电膜、聚苯胺、聚噻吩或聚吡咯等有机导电性化合物、或者这些混合物以及层叠体等。
关于肖特基电极及欧姆电极的形成,例如能够通过真空蒸镀法或溅射法等公知手段来进行。更具体地,例如,在使用所述金属之中的两种第一金属和第二金属形成肖特基电极的情况下,使由第一金属构成的层与由第二金属构成的层层叠,对于由第一金属构成的层和由第二金属构成的层,通过实施利用光刻蚀法的手法的图案化来进行。
当反向偏置被施加到图10的SBD时,由于空缺层(未示出)扩展到n型半导体层101a之中,因此成为高耐压的SBD。另外,在施加了正向偏置的情况下,电子从欧姆电极105b流向肖特基电极105a。以这种方式,使用所述半导体结构的SBD在用于高耐压、强电流方面优异,开关速度也快,耐压性、可靠性也优异。
(HEMT)
图11示出本发明所涉及的高电子迁移率晶体管(HEMT)的一例。图11的HEMT具备带隙宽的n型半导体层121a、带隙窄的n型半导体层121b、n+型半导体层121c、半绝缘体层124、缓冲层128、栅电极125a、源电极125b及漏电极125c。
(MOSFET)
图12示出本发明的半导体装置为MOSFET时的一例。图12的MOSFET是沟槽型的MOSFET,具备n-型半导体层131a、n+型半导体层131b及131c、栅极绝缘膜134、栅电极135a、源电极135b及漏电极135c。
(JFET)
图13示出具备n-半导体层141a、第一n+型半导体层141b、第二n+型半导体层141c、栅电极145a、源电极145b及漏电极145c的结型场效应晶体管(JFET)的优选的一例。
(IGBT)
图14示出具备n型半导体层151、n-型半导体层151a、n+型半导体层151b、p型半导体层152、栅极绝缘膜154、栅电极155a、发射电极155b及集电极155c的绝缘栅双极型晶体管(IGBT)的优选的一例。
(LED)
图15示出本发明的半导体装置为发光二极管(LED)时的一例。图15的半导体发光元件在第二电极165b上具备n型半导体层161,在n型半导体层161上层叠有发光层163。而且,在发光层163上层叠有p型半导体层162。在p型半导体层162上具备透射由发光层163产生的光的透光性电极167,在透光性电极167上层叠有第一电极165a。此外,图15的半导体发光元件还可以除电极部分之外被保护层覆盖。
作为透光性电极的材料,可以举出包括铟(In)或钛(Ti)的氧化物的导电性材料等。更具体地,例如可以举出In2O3、ZnO、SnO2、Ga2O3、TiO2、CeO2或这些中两个以上的混晶或掺杂到这些之中的物质等。通过溅射等公知的手段设置这些材料,从而能够形成透光性电极。另外,也可以在形成透光性电极之后,实施以透光性电极的透明化为目的的热退火。
根据图15的半导体发光元件,通过将第一电极165a设为正极,将第二电极165b设为负极,经由两者向p型半导体层162、发光层163及n型半导体层161流过电流,从而发光层163发光。
作为第一电极165a及第二电极165b的材料,例如可以举出Al、Mo、Co、Zr、Sn、Nb、Fe、Cr、Ta、Ti、Au、Pt、V、Mn、Ni、Cu、Hf、W、Ir、Zn、In、Pd、Nd或Ag等金属或这些的合金、氧化锡、氧化锌、氧化铼、氧化铟、氧化铟锡(ITO)、氧化锌铟(IZO)等金属氧化物导电膜、聚苯胺、聚噻吩或聚吡咯等有机导电性化合物、或者这些混合物等。电极的制膜法并不特别限定,能够按照从印刷方式、喷雾法、涂布方式等湿式方式、真空蒸镀法、溅射法、离子压制法等物理方式、CVD、等离子体CVD法等化学方式等之中考虑与上述材料的适应性适当选择的方法在所述基板上形成。
图16示出发光元件的另一个方式。在图16的发光元件中,在基板169上层叠有n型半导体层161,在通过切断p型半导体层162、发光层163及n型半导体层161的一部分而露出的n型半导体层161的半导体层露出面上的一部分层叠有第二电极165b。
图17示出本发明的优选实施方式之一的结势垒肖特基二极管(JBS)。图17的半导体装置包括半导体区域(半导体层)3、设置在所述半导体区域上且与所述半导体区域之间可形成肖特基势垒的势垒电极2、以及设置在势垒电极2与半导体区域3之间且与所述半导体区域3之间可形成比势垒电极2的肖特基势垒的势垒高度大的势垒高度的肖特基势垒的势垒高度调整层。此外,势垒高度调整层1被嵌入半导体区域3中。在本发明中,优选地,势垒高度调整层每隔一定间隔设置,更优选地,在所述势垒电极的两端与所述半导体区域之间分别设置有所述势垒高度调整区域。根据这种优选的方式,以热稳定性和紧贴性更优异、漏电流进一步减轻、并且耐压等半导体特性更优异的方式构成JBS。此外,图17的半导体装置在半导体区域3上具备欧姆电极4。
图17的半导体装置的各层的形成手段只要不阻碍本发明的目的,则不特别限定,也可以是公知的手段。例如,可以举出通过真空蒸镀法、CVD法、溅射法、各种涂布技术等成膜后,通过光刻蚀法进行图案化的手段或者使用印刷技术等直接进行图案化的手段等。
图18示出本发明的优选实施方式之一的结势垒肖特基二极管(JBS)。图18的半导体装置与图17的半导体装置在势垒电极的外周边部设置有保护环5这点不同。通过这样构成,从而能够得到耐压等半导体特性更优异的半导体装置。此外,在本发明中,通过将保护环5的一部分分别嵌入半导体区域(半导体层)3表面,从而能够得到耐压更有效果且更良好的物质。并且进而,通过在保护环上使用势垒高度高的金属,从而能够与势垒电极的形成相结合,在工业上有利地设置保护环,不会对半导体区域产生太大的影响,也不会使导通电阻恶化就能够形成。
在所述保护环中,通常使用势垒高度高的材料。作为用于所述保护环的材料,例如,可以举出势垒高度在1eV以上的导电性材料等,也可以是与所述电极材料相同的材料。在本发明中,由于用于所述保护环的材料的耐压结构的设计自由度高,还能够多设置保护环,灵活地使耐压更良好,因此优选为上述金属。另外,作为保护环的形状,并不特别限定,例如可以举出ロ字形、圆形、コ字形、L字形或带状等。保护环的数量也不特别限定,优选为3条以上,更优选为6条以上。
(MOSFET)
图20示出具备n-半导体层131a、第一n+型半导体层131b、第二n+型半导体层131c、p型半导体层132、p+型半导体层132a、栅极绝缘膜134、栅电极135a、源电极135b及漏电极135c的金属氧化膜半导体场效应晶体管(MOSFET)的优选的一例。此外,p+半导体层132a可以是p型半导体层,也可以与p型半导体层132相同。此外,p型半导体可以是与n型半导体相同的材料,也可以是包括p型掺杂剂的物质,或者还可以是不同的p型半导体。
本发明的半导体装置除了上述事项以外,进一步使用公知的手段,优选用于作为功率模块、逆变器或转换器,进而,例如优选用于使用电源装置的半导体系统等。所述电源装置通过使用公知的手段与布线图案等连接等,从而能够从所述半导体装置或者作为所述半导体装置来制作。图3示出电源系统的例。图3为使用多个所述电源装置和控制电路来构成电源系统。如图4所示,所述电源系统能够与电子电路组合来用于系统装置。此外,图5示出电源装置的电源电路图的一例。图5示出由功率电路和控制电路构成的电源装置的电源电路,通过逆变器(由MOSFETA~D构成)将DC电压用高频转换至AC后,用变压器实施绝缘及变压,用整流MOSFET(A~B′)整流后,用DCL(平滑用线圈L1、L2)和电容器平滑,输出直流电压。此时,通过电压比较器将输出电压与基准电压进行比较,在PWM控制电路中控制逆变器及整流MOSFET,以成为期望的输出电压。
在本发明中,优选地,所述半导体装置为功率卡,包括冷却器及绝缘部件,更优选地,在所述半导体层的两侧至少经由所述绝缘部件分别设置有所述冷却器,最优选地,在所述半导体层的两侧分别设置有散热层,在散热层的外侧至少经由所述绝缘部件分别设置有所述冷却器。图19示出作为本发明的优选的实施方式之一的功率卡。图19的功率卡是双面冷却型功率卡201,具备制冷剂管202、垫片203、绝缘板(绝缘垫片)208、封装树脂部209、半导体芯片301a、金属传热板(突出端子部)302b、散热器及电极303、金属传热板(突出端子部)303b、焊接层304、控制电极端子305、键合引线308。制冷剂管202的厚度方向剖面具有多个由多个隔壁221划分的流路222,所述多个隔壁221相互隔开规定间隔并在流路方向上延伸。根据这种优选的功率卡,能够实现更高的散热性,能够满足更高的可靠性。
半导体芯片301a在金属传热板302b的内侧的主表面上由焊接层104接合,在半导体芯片301a的剩余的主面上,金属传热板(突出端子部)302b由焊接层304接合,由此,IGBT的集电极面和发射电极面上飞箔二极管的阳极电极面和阴极电极面被所谓的逆并联连接。作为金属传热板(突出端子部)302b和303b的材料,例如可以举出Mo或W等。金属传热板(突出端子部)302b和303b具有吸收半导体芯片301a、301b的厚度差的厚度差,由此金属传热板302的外表面为平面。
树脂封装部209例如由环氧树脂构成,覆盖这些金属传热板302b和303b的侧面并制成模具,半导体芯片301a由树脂封装部209制成模具。其中,金属传热板302b和303b的外主面即接触受热面完全露出。金属传热板(突出端子部)302b和303b从树脂封装部209向图19中、右方突出,作为所谓引线框架端子的控制电极端子305,例如连接形成了IGBT的半导体芯片301a的栅极(控制)电极面与控制电极端子305。
作为绝缘垫片的绝缘板208例如由氮化铝膜构成,但也可以是其它绝缘膜。绝缘板208完全覆盖金属传热板302b和303b并密合,但绝缘板208与金属传热板302b和303b既可以仅接触,也可以涂布硅胶等良好的导热材料,还可以通过各种方法使它们接合。另外,可以通过陶瓷喷涂等形成绝缘层,也可以将绝缘板208接合到金属传热板上,还可以在制冷剂管上接合或形成。
制冷剂管202是通过将铝合金用提取成型法或挤压成型法成型的板材切断为必要的长度而制作的。制冷剂管202的厚度方向剖面具有多个由多个隔壁221划分的流路222,所述多个隔壁221相互隔开规定间隔并在流路方向上延伸。垫片203例如可以是焊接合金等软质的金属板,也可以是通过在金属传热板302b和303b的接触面上涂布等而形成的膜(膜)。该软质的垫片3的表面容易变形,以适应绝缘板208的微小凹凸或弯曲、制冷剂管202的微小凹凸或弯曲,从而降低热电阻。另外,还可以在垫片203的表面等上涂布公知的热传导性良好的脂等,也可以省略垫片203。
(实施例1)
1.成膜装置
在本实施例中使用图1所示的成膜装置19。
2.原料溶液的制作
在0.1M溴化镓(GaBr3)的水溶液中加入20体积%氢卤酸(HBr),作为原料溶液。
3.成膜准备
将由上述2.得到的原料溶液24a收容在雾化发生源24内。接着,作为基板20,使用将a轴方向设为长边方向的长方形(1mm×2.25mm)的m面蓝宝石基板,设置在热板28上,使热板28工作并使基板温度升温至550℃。接着,打开流量调节阀23a、23b,从作为载气源的载气供给单元22a、22b向成膜室30内供给载气,用载气充分替换成膜室30的气氛后,将载气的流量调节为1L/分钟。作为载气使用氮。
4.成膜
接着,通过使超声波振子26以2.4MHz振动,使该振动通过水25a向原料溶液24a传递,从而使原料溶液24a雾化并生成雾(雾化液滴)24b。该雾24b通过载气经由供给管27内而导入到成膜室30内,在大气压下并在550℃下,在基板20上雾发生热反应,并在基板20上成膜。成膜时间为2小时。对于得到的膜,使用X射衍射装置鉴定的结果是α-Ga2O3单晶膜。另外,用显微镜观察了得到的膜有无裂缝。图6示出显微镜像。从图6可知,能够得到无裂纹的晶体品质优异的结晶性氧化物半导体。
(比较例1)
除了使用正方形(1.5mm×1.5mm)的m面蓝宝石基板以外,与实施例1同样地得到结晶性氧化物半导体。对于所得到的结晶性氧化物半导体,与实施例1同样,用显微镜观察了有无裂缝。图7示出显微镜像。从图7可知,到处发生裂缝。此外,调查裂缝发生率的结果是5.6%。
(评价)
对于实施例产品及比较例产品的热分散性,实施了分别用于半导体装置时的热分布的模拟。图8示出实施例产品的评价结果,图9示出比较例产品的评价结果。从示出图8和图9的热分布和热移动方向的箭头可知,本发明的结晶性氧化物半导体的热分散性优异,并且对于需要散热性的半导体装置是有用的。
[产业上的可利用性]
本发明的结晶性氧化物半导体能够用于半导体(例如,化合物半导体电子器件等)、电子部件、电气机器部件、光学、电子照片关联装置、工业部件等所有领域,特别地对半导体装置及其部件等有用。
附图标记说明
1 势垒高度调整层
2 势垒电极
3 半导体区域(半导体层)
4 欧姆电极
5 保护环
19 雾化装置(成膜装置)
20 基板
21 基座
22a 载气供给单元
22b 载气(稀释)供给单元
23a 流量调节阀
23b 流量调节阀
24 雾化发生源
24a 原料溶液
25 容器
25a 水
26 超声波振子
27 供给管
28 加热器
29 排气口
30 成膜室
101a n-型半导体层
101b n+型半导体层
102 p型半导体层
103 半绝缘体层
104 绝缘体层
105a 肖特基电极
105b 欧姆电极
121a 带隙宽的n型半导体层
121b 带隙窄的n型半导体层
121c n+型半导体层
123 p型半导体层
124 半绝缘体层
125a 栅电极
125b 源电极
125c 漏电极
128 缓冲层
131a n-型半导体层
131b 第一n+型半导体层
131c 第二n+型半导体层
132 p型半导体层
132a p+型半导体层
134 栅极绝缘膜
135a 栅电极
135b 源电极
135c 漏电极
141a n-型半导体层
141b 第一n+型半导体层
141c 第二n+型半导体层
145a 栅电极
145b 源电极
145c 漏电极
151 n型半导体层
151a n-型半导体层
151b n+型半导体层
152 p型半导体层
154 栅极绝缘膜
155a 栅电极
155b 发射电极
155c 集电极
161 n型半导体层
162 p型半导体层
163 发光层
165a 第一电极
165b 第二电极
167 透光性电极
169 基板
201 双面冷却型功率卡
202 制冷剂管
203 垫片
208 绝缘板(绝缘垫片)
209 封装树脂部
221 隔壁
222 流路
301a 半导体管
302b 金属传热板(突出端子部)
303 散热器及电极
303b 金属传热板(突出端子部)
304 焊接层
305 控制电极端子
308 键合引线
Claims (16)
1.一种结晶性氧化物半导体,至少包括第一晶轴和第二晶轴,其特征在于,
所述结晶性氧化物半导体至少包括第一边和比第一边短的第二边,
所述结晶性氧化物半导体的第一晶轴方向的线热膨胀系数比第二晶轴方向的线热膨胀系数小,
所述结晶性氧化物半导体的第一边方向与第一晶轴方向平行或大致平行,
所述结晶性氧化物半导体的第二边方向与第二晶轴方向平行或大致平行。
2.根据权利要求1所述的结晶性氧化物半导体,其中,以包含镓的金属氧化物为主要成分。
3.根据权利要求1或2所述的结晶性氧化物半导体,其中,以具有刚玉结构的金属氧化物为主要成分。
4.根据权利要求3所述的结晶性氧化物半导体,其中,所述金属氧化物至少包括镓、铟、铑或铱。
5.根据权利要求3所述的结晶性氧化物半导体,其中,所述金属氧化物包括镓、铟和/或铝。
6.根据权利要求1~5中任一项所述的结晶性氧化物半导体,其中,所述第一边和所述第二边均以直线表示。
7.根据权利要求1~6中任一项所述的结晶性氧化物半导体,其中,其为膜状。
8.根据权利要求7所述的结晶性氧化物半导体,其中,具有刚玉结构,且所述膜的主面为a面、m面或r面。
9.根据权利要求7所述的结晶性氧化物半导体,其中,具有刚玉结构,所述膜的主面为c面,并且具有0.2°以上的偏角。
10.一种半导体装置,至少具备半导体层和电极,其中,所述半导体层包括权利要求1~9中任一项所述的结晶性氧化物半导体。
11.根据权利要求10所述的半导体装置,其中,其为功率器件。
12.根据权利要求10所述的半导体装置,其中,其为功率模块、逆变器或转换器。
13.根据权利要求10所述的半导体装置,其中,其为功率卡。
14.根据权利要求13所述的半导体装置,其中,还包括冷却器和绝缘部件,在所述半导体层的两侧至少经由所述绝缘部件分别设置有所述冷却器。
15.根据权利要求14所述的半导体装置,其中,在所述半导体层的两侧分别设置有散热层,在所述散热层的外侧至少经由所述绝缘部件分别设置有所述冷却器。
16.一种半导体系统,具备半导体装置,其中,所述半导体装置为权利要求10~15中任一项所述的半导体装置。
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