CN111316408B - 电力用半导体装置以及电力用半导体装置的制造方法 - Google Patents

电力用半导体装置以及电力用半导体装置的制造方法 Download PDF

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Publication number
CN111316408B
CN111316408B CN201880068708.7A CN201880068708A CN111316408B CN 111316408 B CN111316408 B CN 111316408B CN 201880068708 A CN201880068708 A CN 201880068708A CN 111316408 B CN111316408 B CN 111316408B
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semiconductor element
substrate
region
sinterable metal
bonding
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CN111316408A (zh
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薮田康平
山田隆行
村松佑哉
别芝范之
杉祐太朗
春名裕明
福优
藤田充纪
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

电力用半导体装置具备：基板；以及半导体元件，在基板的第1面上使用烧结性金属接合材料接合，基板在第1面具有在比半导体元件的发热部的正下方更靠外侧的位置形成的多个凹坑，通过在形成凹坑后的基板上供给烧结性金属接合材料，并实施加热和加压，将半导体元件接合到基板。

Description

电力用半导体装置以及电力用半导体装置的制造方法
技术领域
本发明涉及使用烧结性金属接合材料将半导体元件接合到基板的电力用半导体装置以及电力半导体装置的制造方法。
背景技术
在作为电力用半导体装置的功率模块中，作为开关元件或者整流元件，安装有IGBT、二极管等半导体元件。这些纵型半导体元件设置有在面内整个区域实施金属化的背面的电极、和在与其相向的表面的一部分实施金属化的电极。而且，为了流过大电流，使用了背面电极与基板电极连接并且表面电极经由布线金属板与外部端子连接的布线构造。
另一方面，根据电力损失降低的观点，近年来正在开发例如使用如碳化硅(SiC)、氮化镓(GaN)的宽带隙半导体材料的半导体元件。在使用这样的宽带隙半导体材料的半导体元件的情况下，元件自身的耐热性高，能够实现大电流下的高温动作。
而且，为了发挥该特性，为了形成上述布线构造，需要高耐热性能的接合材料。然而，当前未发现无铅并且具有高耐热性能的焊料材料。
因此，代替焊料而研究使用利用金属微粒的烧结现象的烧结性金属接合材料的功率模块。烧结性金属接合材料是包括金属微粒、有机溶剂成分以及覆盖金属微粒的保护膜的膏状的接合材料。烧结性金属接合材料利用金属微粒在比该金属的熔点低的温度下烧结的现象，实现与被接合部件的金属结合。
关于接合后的状态，金属微粒之间被扩散接合，并且元件的金属化与安装元件的基板的表面之间也扩散接合。其结果，接合后的熔点提高至作为金属的本来的熔点。因此，能够具有比接合时的温度高的耐热性能。
另外，作为烧结性金属接合材料一般已知的金(Au)、银(Ag)以及铜(Cu)相比于焊料，热传导率更大。因此，能够使接合层进一步变薄，所以还能够具有高的散热性能。
在此，作为形成烧结性金属接合时的特征可以举出，与以往的焊料接合不同，一般在接合时需要加压。烧结性金属接合在未施加接合所需的加压力的情况下，不形成良好的接合，发生接合寿命降低这样的问题。
因此，研究用于使接合寿命提高的策略。例如提出了如下以往技术(参照例如专利文献1)：通过在接合的基板的表面形成凹凸，使接合面积增加，延长裂纹发展路径，由此提高接合寿命。
另外，还采用通过使加压力上升，形成坚固的接合层来提高接合寿命的方法。然而，由于加压力的增加，施加到半导体元件的损害也增加，半导体元件破损的可能性变高。因此，采取在对半导体元件加压时，通过使用缓冲材料加压来减轻损害的手法(参照例如专利文献2)。
另外，还采用通过在基板表面用冲压加工、蚀刻加工、切削加工等形成槽，使耐热性以及耐久性提高的方法(参照例如专利文献3)。
现有技术文献
专利文献
专利文献1：日本特开2015-35459号公报
专利文献2：日本特开2017-108192号公报
专利文献3：日本特开2017-92168号公报
发明内容
然而，在以往技术中存在如下的课题。
专利文献1的图1记载的接合构造由于增加接合部件的表面粗糙度，在接合时施加的加压力相比于两侧在中央部分更高，变得不均匀。因此，加压力弱的部分的接合部寿命降低。还如专利文献1的图3所示，通过增加粗糙度，裂纹面积比例的增加变快。
在专利文献1中，通过形成粗面而接合面积增加。然而，在专利文献1中，在接合层中易于发生加压力不足，在加压力不足时，接合寿命降低。另外，在专利文献1中，在为了补偿加压力不足而使接合时的加压力上升时，作为结果存在导致半导体元件破损的可能性。
在如专利文献2为了抑制由于加压引起的损害而使用缓冲材料时，由于该缓冲材料变形而使半导体元件偏移成为问题。因此，需要确保接合强度以避免半导体元件偏移。在接合强度的确保中，增加接合面积、或者形成发挥锚固效应(anchoring effect)的凹凸是有效的。
在专利文献3中，通过在基板表面用冲压加工、蚀刻加工、切削加工等形成槽，使耐热性以及耐久性提高。然而，在专利文献3中，没有与接合强度有关的记载。
另外，如专利文献3的图5所示，槽与半导体元件3的外缘平行地形成。因此，发挥锚固效应的方向在俯视时仅为横向(X)以及纵向(Y)，估计不到针对向旋转方向(θ)的力的接合强度的提高效果。
关于半导体元件的偏移方式，存在烧结性金属材料的厚度、加压工具的倾斜、基板以及半导体元件的厚度等各种偏差要因。因此，难以预测半导体元件的偏移。
另外，在使用烧结性金属材料的半导体元件的接合中，在接合时一边加热一边加压。因此，在接合界面中产生半导体元件和基板的热膨胀系数差所引起的热应力，易于产生剥离。另外，在烧结性金属材料之上搭载有半导体元件的状态下搬送时，导致半导体元件的偏移。
本发明是为了解决如上所述的课题而完成的，其目的在于得到一种接合强度高且接合寿命优良的电力用半导体装置以及电力用半导体装置的制造方法。
本发明的电力用半导体装置具备：基板；以及半导体元件，在基板的第1面上使用烧结性金属接合材料接合，基板在第1面在比半导体元件的发热部的正下方更靠外侧的位置、以及半导体元件的正下方，具有通过激光加工形成的多个凹坑(dimple)。
另外，本发明的电力用半导体装置的制造方法是具有在基板的第1面上使用烧结性金属接合材料接合的半导体元件的电力用半导体装置的制造方法，具有：第1工序，在基板的第1面上，在比半导体元件的发热部的正下方更靠外侧的位置及半导体元件的正下方，通过激光加工，形成深度0.5μm～10μm的多个凹坑；第2工序，在形成凹坑后的基板上，供给烧结性金属接合材料；第3工序，在烧结性金属接合材料之上供给半导体元件；以及第4工序，通过对烧结性金属接合材料上的半导体元件实施加热和加压，在第1面上通过烧结性金属接合来接合半导体元件。
根据本发明，具备如下构造：作为接合层的剥离不对散热性造成影响的区域，在半导体元件的发热部正下方的外侧以及半导体元件的正下方利用激光加工形成凹坑，由此发挥接合面积的增大、和针对全方向的锚固效应，从而一边提高基板和烧结性金属接合材料的接合强度，一边即使在产生接合层的剥离的情况下也防止剥离发展至半导体元件的发热部正下方，不使散热性降低。因此，能够得到在使接合强度提高的同时使产品寿命提高的电力用半导体装置以及电力用半导体装置的制造方法。
附图说明
图1是将本发明的实施方式1中的功率模块摘录一部分的示意图。
图2是图1中的A-A’剖面图。
图3是本发明的实施方式1所涉及的基板的表面的详细图。
图4是图3中的B-B’剖面图。
图5是示出本发明的实施方式1中的功率模块的制造工序的一个例子的图。
图6是示出本发明的实施方式1中的接合强度提高效果的图。
图7是在本发明的实施方式1中通过激光形成的凹坑的三维测定图。
图8是示出在本发明的实施方式1中形成槽形状或者凹坑形状的区域的图。
图9是示出针对图8所示的区域7形成有半圆状的槽的状态的图。
图10是示出针对图8所示的区域7形成有半径r的凹坑的状态的图。
图11是与本发明所涉及的实施方式1的功率模块有关的热循环试验结果的剖面图。
图12是示意地示出在本发明的实施方式2中Cu表面的氧化膜厚的经时变化的图。
图13是示意地示出在本发明的实施方式2中Cu的氧化膜厚度和临时固定中的接合强度的关系的图。
图14是将本发明的实施方式3中的功率模块摘录一部分的示意图。
图15是示出本发明的实施方式3中的功率模块的制造工序的一个例子的图。
(附图标记说明)
1：基板；2：烧结性金属接合材料(烧结性金属接合材料)；3：半导体元件；4：凹坑；5：电力用半导体装置(功率模块)；6：发热部正下方区域；7：区域；8：槽。
具体实施方式
以下，使用附图，说明本发明的电力用半导体装置以及电力用半导体装置的制造方法的优选的实施方式。
实施方式1.
图1是将本发明的实施方式1中的功率模块摘录一部分的示意图。另外，图2是图1中的A-A’剖面图。功率模块5在基板1上使用烧结性金属接合材料2接合半导体元件3。另外，基板1的表面具有发挥锚固效应的凹坑4。
作为半导体元件3的材质，能够应用硅(Si)、碳化硅(SiC)、氮化镓(GaN)或者金刚石这样的带隙比硅宽的所谓宽带隙半导体材料。作为半导体元件3的器件种类，无需特别限定，能够搭载如IGBT、MOSFET那样的开关元件、如二极管那样的整流元件。
关于半导体元件3的大小，例如使用一边为5mm～20mm程度的长方形的元件。例如，在作为开关元件或者整流元件发挥功能的半导体元件3中使用硅(Si)的情况下，相比于烧结性金属接合的应用得到发展的碳化硅(SiC)，成本更低。因此，能够实现功率模块的低价格化。
另外，相比于以往的焊料接合，烧结性金属接合的散热性更高。因此，能够进行高温动作。然而，硅(Si)相比于碳化硅(SiC)，弯曲强度以及硬度更低。因此，硅(Si)相比于碳化硅(SiC)，需要降低烧结性金属接合时的加压力，一边防止半导体元件的破损一边实现接合。
在本实施方式1中，在半导体元件3的材料中使用硅(Si)。进而，在本实施方式1中，使用大小为15×15mm、厚度为0.15mm的半导体元件3。图3是本发明的实施方式1所涉及的基板1的表面的详细图。另外，图4是图3中的B-B’剖面图。如图3以及图4所示，关于基板1的凹坑4，使用Yb光纤激光器，以作为凹坑形状的直径10μm～100μm、表面粗糙度1μm～3μm的大小，按照线状形成多个。
此外，作为实验的结果，凹坑形状的直径适合的是40μm±10μm，表面粗糙度(RzJIS)优选为0.5μm～10μm。作为凹坑4的形成方法，由于形成位置精度高且易于形成，激光处理最好，具体而言，最好应用CO2激光器、YAG激光器等。另外，凹坑4的排列除了线状以外，即使是格子状等也能够发挥本发明的效果。
安装半导体元件3的基板1例如使用Cu、Al等金属基板；对Al2O3、Si3N4、AlN等绝缘性的陶瓷，层叠并固定了使用Cu、Al等通常金属的导电性的导体层而成的陶瓷绝缘基板等。该导体层既可以有金属层单独的情况，也可以是用Ag、Au等贵金属材料覆盖。
在本实施方式1中，使用在Si3N4的两面利用钎料贴合Cu的导体层而形成的基板1。在此，Si3N4的厚度设为0.3mm，Cu板的厚度设为0.4mm，Cu的表面以0.2μm～5.0μm的厚度镀Ag(未图示)。
此外，半导体元件3以及Si3N4的线膨胀系数是3ppm/℃程度，Cu的线膨胀系数是17ppm/℃。由此，在Cu板的厚度变大时，作为基板1整体的线膨胀系数变大，施加到半导体元件3以及烧结性金属接合材料2的应力和形变增大。因此，在Cu板的厚度薄时，能够提高接合寿命。
此外，与上述Si、Si3N4、Cu等基板1的材质、或者半导体元件3以及基板1的厚度无关地，发挥本发明所涉及的基板1和烧结性金属接合材料2的接合强度提高效果。
在此，说明使用烧结性金属接合材料的接合。关于烧结性金属接合材料，纳米等级的金属微粒具有非常大的表面积，具备大量表面能量，所以反应性变高。因此，使用烧结性金属接合材料的接合利用的是如下现象：该金属通过比以大块呈现的熔点低的温度，通过扩散而发展金属接合。
成为骨料的金属微粒既可以是金(Au)、银(Ag)、铜(Cu)、钯(Pd)、铂(Pt)等被分类成贵金属的单体的金属，也可以是Ag-Pd、Au-Si、Au-Ge、Au-Cu等合金的组成。金属微粒由于其反应性的高度，即便在常温下，仅通过接触就进行烧结即扩散接合。因此，在烧结性金属接合材料中，为了抑制金属微粒凝集而进行烧结反应，用有机保护膜覆盖金属微粒。
进而，金属微粒通过用于将金属微粒之间在独立的状态下分散保持的有机分散材料保持。即，烧结性金属接合材料是将作为骨料的金属微粒在有机成分中分散而成为膏状的材料。含有这样的金属纳米粒子的烧结接合材料通过有机成分的分解和纳米粒子的烧结，相对初始的膏时的体积，接合后的接合部的体积减少到约1/2～1/4程度。
因此，为了得到空洞少的可靠性高的接合部，在接合时必须一边加压一边加热。这样，为了使用烧结接合技术，需要能够对接合部(烧结性金属接合材料)进行加压的半导体装置构造。
在本实施方式1中，作为烧结性金属接合材料2，使用Ag烧结材料。作为接合条件，接合温度、加压、接合时间成为决定接合力的主要的参数。
以下，示出在金属微粒中使用Au、Ag或者Cu的烧结中的各种条件的一个例子。
<干燥条件>
温度：80℃～200℃
时间：1min～60min
<临时固定条件>
温度：25℃～200℃
加压：0.01MPa～5MPa
时间：0min～1min
<接合条件>
温度：250℃～350℃
加压：0.1MPa～50MPa
接合时间：1min～60min
此外，这些条件是一般的烧结性金属接合材料2的各种条件。即，本发明的功率模块5当然没有必要在这些条件下制造。
图5是示出本发明的实施方式1中的功率模块5的制造工序的一个例子的图。本实施方式1中的功率模块5的制造工序作为其一个例子，具有如图5所示的5个步骤。
<步骤1>形状制作工序
在基板1的表面，使用激光，形成发挥锚固效应的凹坑4。
<步骤2>印刷工序
在基板1上，以30μm～200μm的厚度，印刷烧结性金属接合材料2。
<步骤3>干燥工序
依照上述条件，使烧结性金属接合材料2干燥。
<步骤4>临时固定工序
依照上述条件，在烧结性金属接合材料2上安装半导体元件3并临时固定。
<步骤5>本接合工序
依照上述条件，使用烧结性金属接合材料2，接合基板1和半导体元件3。此外，在本实施方式中，通过印刷供给烧结性金属材料2，但也可以是其他供给方法。
然后，在利用烧结性金属接合材料2将半导体元件3接合到基板1之后，将引线电极(未图示)利用焊料接合而连接到半导体元件3之上。此时，烧结性金属接合材料2的接合已经完成。因此，不会发生由于焊料接合时的300℃程度的温度上升而烧结性金属接合材料2再熔融等恶劣影响。
在将引线电极进行焊料接合到半导体元件3上之后，将包围基板整体的框(未图示)利用粘接剂粘接到基板1。然后，通过在框中注入凝胶树脂而将半导体元件3的周围密封并硬化，能够得到功率模块接合体。
此外，在本实施方式1中，实施了利用凝胶树脂的密封，但本发明不限定于这样的密封。也可以通过利用硅酮浇灌(silicone potting)、模制成形的密封等其他方法，对半导体元件3的周围进行树脂密封。另外，根据情况，也可以不进行树脂密封。
图6是示出本发明的实施方式1中的接合强度提高效果的图。具体而言，该图6是针对通常的基板和具有本发明所涉及的构造的基板1的各个，对半导体元件依照上述制造工序进行到临时固定时的、接合强度变化的示意图。
本实施方式1所涉及的基板1通过具有凹坑形状，通过锚固效应，看到接合强度的提高。在临时固定的接合强度低的情况下，在基板搬送时或者后工序的本接合时，半导体元件偏移。由于该偏移，产生无法进行装配这样的问题、或者半导体元件3从烧结性金属接合材料2上伸出并由于其高低差而半导体元件3破损这样的问题。本实施方式1所涉及的基板1由于临时固定的接合强度高于通常基板，所以能够避免这些问题。
图7是通过激光处理形成的凹坑4的三维测定图。通过用激光形成凹坑，照射的部分熔融飞散，熔敷到周围的部分。通过利用该熔敷在凹坑周围全方位地形成凹凸，不仅是平面方向(X方向、Y方向)而且在旋转方向(θ方向)上也能够发挥锚固效应。
在用于使接合面积增大的凹凸的形成中，并非设为槽而是设为凹坑形状，由此能够使其面积进一步增大。图8是示出在本发明的实施方式1中形成槽形状或者凹坑形状的区域的图。如图8所示，考虑1边的长度L的正方形的区域中的、基于宽度2r的区域7。加工前的该区域7的表面积A成为下式(1)。
[数学式1]
A＝2r×4L＝8rL (1)
图9是示出针对图8所示的区域7形成有半圆状的槽8的状态的图。在通过切削等针对各个边的每一个形成长度L的半径r的半圆状的槽时，图9所示的半圆状的槽8的表面积B成为下式(2)。
[数学式2]
B＝πr×4L＝4πrL (2)
相对于此，图10是示出针对图8所示的区域7形成有半径r的凹坑4的状态的图。使用激光处理形成的每1个半径r的凹坑的表面积a成为下式(3)。
[数学式3]
在此，当如图10所示，在一片的长度L的区域7中无间隙地形成凹坑4时，凹坑的数量n成为下式(4)。
[数学式4]
因此，基于n个凹坑的合计的表面积C成为下式(5)。
[数学式5]
C＝a×n＝4πrL (5)
除此以外，还有凹坑周围的面积D能够表示为从表面积A减去俯视时的凹坑的面积C’而得到的值。即，C’成为下式(6)，D成为下式(7)。
[数学式6]
在区域7中形成槽8时的表面积的增加率是B/A，成为下式(8)。
[数学式7]
另一方面，在区域7中形成凹坑4时的表面积的增加率是(C+D)/A，成为下式(9)。
[数学式8]
相比于槽形状，通过形成凹坑形状，表面积增加到1.14倍(1.79/1.57＝1.14)。除此以外，在凹坑4的周围，通过母材熔敷而形成的凹凸也对接合面积作出贡献。
此时形成的凹凸的体积是在形成凹坑4时熔解的母材，所以该体积等于凹坑4的体积。因此，在假设为凹凸的表面积与凹坑的表面积等同时，还考虑由凹凸形成的接合面积的贡献量时的、在区域7中形成凹坑4时的表面积的增加率是(2C+D)/A，成为下式(10)。
[数学式9]
因此，相比于槽8的表面积，使用激光处理形成的凹坑4的表面积成为2.13倍(3.35/1.57＝2.13)，成为2倍以上。进而，凹凸是全方位地形成的，所以充分地发挥向旋转方向(θ方向)的锚固效应。
图11是与本发明所涉及的实施方式1的功率模块有关的热循环试验结果的剖面图。具体而言，该图11是示出关于在上述制造工序中制作的本实施方式1所涉及的功率模块，在-40℃～150℃下，以各15分钟实施热循环试验2000cycle的结果的图。
如图11所示，在应用本发明的凹坑4的部位中，由于基板1的凹凸，发生烧结性金属接合材料2的接合强度低的部分。因此，在凹坑4的部位中，裂纹发展。
然而，在该凹坑4上的烧结性金属接合材料2内发生的裂纹是在半导体元件3的发热部的外周，是散热路径以外。因此，如图11所示的箭头，散热性不会恶化。因此，不会产生由于形成凹坑4所致的对性能方面的恶劣影响。
另一方面，能够确认对半导体元件3的发热部正下方处的烧结性金属接合材料2以及半导体元件3未发生裂纹等损害。因此，本实施方式1所涉及的实现接合强度的提高的功率模块不会发生散热性降低等恶劣影响，不会损失作为功率模块的功能。
此外，半导体元件3的发热部一般是保护环的内侧区域。
如以上所述，根据实施方式1，作为接合层的剥离不对散热性造成影响的区域，在半导体元件的发热部正下方的外侧形成有凹坑。具有这样的构造的本实施方式1所涉及的功率模块通过利用该凹坑的锚固效应，能够提高基板和烧结性金属接合材料的接合强度。
其另一方面，本实施方式1所涉及的功率模块即使在产生接合层的剥离的情况下，也防止剥离发展至半导体元件的发热部正下方，不会使散热性降低。其结果，能够实现在使接合强度提高的同时，使产品寿命提高的功率模块。
换言之，本实施方式1所涉及的功率模块能够通过基板的表面粗糙度发挥锚固效应，能够使干燥状态下的基板和烧结性金属接合材料的接合强度提高。其另一方面，在有表面粗糙度、凹凸时，形成接合层的粗密，所以裂纹易于发展。
然而，如果裂纹的发生场所是半导体元件发热部的外侧，则对接合寿命的影响小。在该观点中，本实施方式1所涉及的功率模块在比半导体元件发热部的正下方更靠外侧的位置设置有多个凹坑。通过使用这样的构造，能够使裂纹发展的起点成为接合材料，能够降低对半导体元件的损害。
进而，直到比基板和半导体元件的接合区域更靠外侧的位置，形成有凹坑。其结果，通过凹坑存在范围的扩大，扩大呈现锚固效应的范围，能够实现接合强度的提高。
另外，关于凹坑的形状，能够构成为相对半导体元件的外形平行并且线状地交替形成多个凹坑部位和未凹陷的部位。通过形成这样的线状的凹坑，相比于使整体粗面化的情况，能够在全周抑制裂纹向半导体元件内部的发展速度。其结果，能够使接合部寿命提高。
此外，关于基板与烧结性金属之间的接合强度的提高，不仅在烧结接合完成时，而且在处于工序的中途的基板上供给烧结性金属接合材料之后，使不需要的溶剂干燥的干燥状态下，也发挥利用锚固效应的接合强度的提高效果。
作为烧结性金属接合法的特征，有选择在使烧结接合完成的本接合前，将半导体元件定位以及临时固定的工序的例子。即使在该情况下，也能够通过与形成于基板的凹坑相当的粗面，使基板和烧结性金属接合材料的接合强度上升。
进而，在半导体元件的发热部的正下方，未形成凹坑。因此，能够降低本接合时的加压力，能够抑制由于接合时的加压力引起的半导体元件破损。其结果，能够实现不会使产品寿命恶化而能够确保接合强度的烧结性金属接合。
实施方式2.
在功率模块5中使用的基板1中，作为接合的最表面的材料，即便是Ag、Au等贵金属也没有问题。但是，在本实施方式2中，说明作为最表面的材料选定Cu的情况。
在最表面的材料是Cu的情况下，由于大气放置而发展自然氧化覆膜(oxidecoating)的形成。因此，在烧结性金属接合中产生恶劣影响。为了实现坚固的烧结接合，最好在基板1的表面与烧结性金属接合材料的界面，不存在氧化覆膜、异物等而金属原子彼此直接接触。
因此，在本实施方式2中，对基板1在供给材料之前使新生面露出，由此能够使接合强度提高。但是，从使新生面露出至供给材料，也发展自然氧化覆膜的形成。因此，从使新生面露出至供给材料为止的时间最好尽可能短。
在本实施方式2中，将在Yb光纤激光器处理之后直至材料供给为止的时间设为30秒以内。在激光处理之后直至材料供给为止的时间优选为10000秒以内。作为其根据，可以举出氧化覆膜的形成和接合强度的关系。图12是示意地示出在本发明的实施方式2中Cu表面的氧化膜厚的经时变化的图。另外，图13是示意地示出在本发明的实施方式2中Cu的氧化膜厚度和临时固定中的接合强度的关系的图。
在氧化覆膜薄的情况下，能够确保高的接合强度，而随着氧化覆膜变厚，看到接合强度的降低。根据这些图12、图13可知，为了确保固定强度，最好使氧化覆膜厚度成为2.5nm以内。其原因为，自然氧化覆膜以10000秒达到2.5nm。
此外，在烧结性金属接合材料中包含去除氧化覆膜的还原剂的情况下，能够延长在激光处理之后直至材料供给为止的时间。但是，还原剂一般阻碍烧结性金属接合。因此，在烧结性金属接合材料中包含还原剂是不优选的。另外，即使在烧结性金属接合材料中包含还原剂的情况下，最好还原剂尽可能少量。
如以上所述，根据实施方式2，即使在基板的最表面的材料是Cu的情况下，通过在供给材料之前使新生面露出，缩短从使新生面露出至供给材料为止的时间，能够得到适合的接合强度。
另外，还能够通过在刚要供给烧结性金属接合材料之前形成凹坑，去除基板表面上的金属氧化膜、防锈剂等阻碍接合的材料。而且，根据能够使基板的新生面露出这一点，也能够使基板和烧结性金属接合材料的接合强度提高。
实施方式3.
图14是将本发明的实施方式3中的功率模块摘录一部分的示意图。功率模块5在基板1上使用烧结性金属接合材料2接合半导体元件3。另外，基板1的表面根据区域而表面粗糙度不同，成为基板1上的半导体元件3的发热部正下方区域6的表面粗糙度小、且由于其周围的凹坑4而表面粗糙度大的构造。
在本实施方式3中，针对基板1的发热部正下方区域6和其周围的粗面4，利用Yb光纤激光器实施加工。加工后的发热部正下方区域6的表面粗糙度设为0μm～0.3μm，周围的凹坑4的深度设为1μm～3μm。此外，发热部正下方区域6的表面粗糙度最好为0μm～0.5μm，周围的凹坑4的表面粗糙度最好为0.5μm～10μm。
此外，在本实施方式3中，为了加工的简便性，在所有加工区域中使用相同的Yb光纤激光器，根据加工区域变更激光条件(输出、光点径、扫描速度等)，由此同时实施加工。但是，即使在针对发热部正下方区域6和其周围的凹坑4分别用CO2激光器、研削加工等以不同的方法、不同的工序实施的情况下，只要形成同样的形状，就发挥本发明的效果。
在基板1的发热部正下方区域6中，存在氧化覆膜、异物、化学组成物，它们阻碍烧结性金属接合。因此，通过在材料供给之前使基板表面粗面化，能够去除阻碍烧结接合的因素，确保高的接合强度。
此外，在基板1的表面使用Cu材料的情况下，在去除氧化覆膜之后自然氧化。因此，在基板1上供给烧结性金属接合材料2的时间点的氧化覆膜比粗面化处理前薄的情况下，对接合强度的提高更有利地发挥作用。
图15是示出本发明的实施方式3中的功率模块5的制造工序的一个例子的图。在本实施方式3中的功率模块5的制造工序中，作为其一个例子，具有如图15所示的5个步骤。此外，各种条件与实施方式1记载的条件相同。
<步骤1>形状制作工序
在基板1中的半导体元件3的发热部正下方区域6和其周围的凹坑4的区域中，同时形成不同的表面粗糙度。
<步骤2>印刷工序
在基板1上，以30μm～200μm的厚度印刷烧结性金属接合材料2。
<步骤3>干燥工序
依照上述条件，使烧结性金属接合材料2干燥。
<步骤4>临时固定工序
依照上述条件，在烧结性金属接合材料2上安装半导体元件3并临时固定。
<步骤5>本接合工序
依照上述条件，使用烧结性金属接合材料2，接合基板1和半导体元件3。
在本实施方式3的制造方法中，能够通过步骤1的形状制作工序，同时形成半导体元件3的发热部正下方区域6和其周围的凹坑4。其结果，能够简化制造方法，削减成本。
如以上所述，根据实施方式3，在基板上同时形成具有不同的表面粗糙度的半导体元件发热正下方区域和凹坑。其结果，能够使接合强度提高的功率模块的制造成本降低。
此外，本发明能够在该发明的范围内组合各实施方式、或者将各实施方式适宜地变形、省略。

Claims (10)

1.一种电力用半导体装置，具备：
基板；以及
半导体元件，使用烧结性金属接合材料接合到所述基板的第1面上，
所述基板在所述第1面上具有第1区域和第2区域，所述第1区域在所述半导体元件的发热部的正下方，所述第2区域由在所述半导体元件的正下方且比所述第1区域更靠外侧的区域以及比所述半导体元件的端部更靠外侧的区域构成，所述第2区域的在所述半导体元件的正下方且比所述第1区域更靠外侧的区域以及比所述半导体元件的端部更靠外侧的区域通过激光加工而形成有并非槽形状的凹坑。
2.根据权利要求1所述的电力用半导体装置，其中，
所述半导体元件的所述发热部是俯视时比所述半导体元件的保护环更靠内侧的区域。
3.根据权利要求1或者2所述的电力用半导体装置，其中，
所述凹坑是按照与所述半导体元件的外形平行的线状排列而形成的。
4.根据权利要求1或者2所述的电力用半导体装置，其中，
作为所述半导体元件的材质使用硅。
5.根据权利要求1或者2所述的电力用半导体装置，其中，
所述基板的所述第1区域是粗糙度为0.5μm以下的面。
6.一种电力用半导体装置的制造方法，该电力用半导体装置具有使用烧结性金属接合材料接合到基板的第1面上的半导体元件，该电力用半导体装置的制造方法具有：
第1工序，在所述基板的所述第1面上在所述半导体元件的正下方且比所述半导体元件的发热部的正下方更靠外侧的区域以及比所述半导体元件的端部更靠外侧的区域，通过激光形成0.5μm～10μm的表面粗糙度的多个并非槽形状的凹坑；
第2工序，在形成所述凹坑后的所述基板之上，供给烧结性金属接合材料；
第3工序，在所述烧结性金属接合材料之上，供给所述半导体元件；以及
第4工序，通过对所述烧结性金属接合材料之上的所述半导体元件实施加热和加压，从而通过烧结性金属接合将所述半导体元件接合到所述第1面上。
7.根据权利要求6所述的电力用半导体装置的制造方法，其中，
在所述第1工序后直到执行所述第2工序为止的时间是10000秒以内。
8.一种电力用半导体装置的制造方法，该电力用半导体装置具有使用烧结性金属接合材料接合到基板的第1面上的半导体元件，该电力用半导体装置的制造方法具有：
第1工序，在所述基板的所述第1面上在所述半导体元件的正下方且比所述半导体元件的发热部的正下方更靠外侧的区域以及比所述半导体元件的端部更靠外侧的区域，形成0.5μm～10μm的表面粗糙度的多个并非槽形状的凹坑；
第2工序，通过激光去除处于所述第1面上的所述半导体元件的发热部的正下方区域的表面的氧化覆膜，使新生面露出；
第3工序，在形成所述凹坑和所述新生面后的所述基板之上，供给烧结性金属接合材料；
第4工序，在所述烧结性金属接合材料之上，供给所述半导体元件；以及
第5工序，通过对所述烧结性金属接合材料之上的所述半导体元件实施加热和加压，从而通过烧结性金属接合将所述半导体元件接合到所述第1面上。
9.根据权利要求8所述的电力用半导体装置的制造方法，其中，
所述第1工序和所述第2工序通过同一工序执行。
10.根据权利要求8或者9所述的电力用半导体装置的制造方法，其中，
在所述第1工序完成后或者所述第2工序完成后，直到供给所述烧结性金属接合材料为止的时间是10000秒以内。
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