CN1111904C - 半导体器件制造方法 - Google Patents
半导体器件制造方法 Download PDFInfo
- Publication number
- CN1111904C CN1111904C CN98120065.6A CN98120065A CN1111904C CN 1111904 C CN1111904 C CN 1111904C CN 98120065 A CN98120065 A CN 98120065A CN 1111904 C CN1111904 C CN 1111904C
- Authority
- CN
- China
- Prior art keywords
- wafer
- silicon oxide
- oxide layer
- silicon wafer
- heavy metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 title claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 71
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 71
- 238000005247 gettering Methods 0.000 claims abstract description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 9
- 229920005591 polysilicon Polymers 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 5
- 239000001301 oxygen Substances 0.000 claims abstract description 5
- 239000002244 precipitate Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 40
- 229910052710 silicon Inorganic materials 0.000 claims description 40
- 239000010703 silicon Substances 0.000 claims description 40
- 229910001385 heavy metal Inorganic materials 0.000 claims description 25
- 230000003647 oxidation Effects 0.000 claims description 24
- 238000007254 oxidation reaction Methods 0.000 claims description 24
- 238000009792 diffusion process Methods 0.000 claims description 10
- 238000012545 processing Methods 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 abstract description 25
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 238000005468 ion implantation Methods 0.000 abstract description 3
- 238000000926 separation method Methods 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 83
- 239000010410 layer Substances 0.000 description 63
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 230000014509 gene expression Effects 0.000 description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP265575/1997 | 1997-09-30 | ||
JP26557597A JP3211747B2 (ja) | 1997-09-30 | 1997-09-30 | 半導体装置の製造方法 |
JP265575/97 | 1997-09-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1213164A CN1213164A (zh) | 1999-04-07 |
CN1111904C true CN1111904C (zh) | 2003-06-18 |
Family
ID=17419031
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN98120065.6A Expired - Fee Related CN1111904C (zh) | 1997-09-30 | 1998-09-29 | 半导体器件制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6562733B2 (zh) |
JP (1) | JP3211747B2 (zh) |
CN (1) | CN1111904C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100466200C (zh) * | 2004-05-07 | 2009-03-04 | Memc电子材料有限公司 | 减少硅晶片中的金属杂质的方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6576501B1 (en) * | 2002-05-31 | 2003-06-10 | Seh America, Inc. | Double side polished wafers having external gettering sites, and method of producing same |
US6759302B1 (en) * | 2002-07-30 | 2004-07-06 | Taiwan Semiconductor Manufacturing Company | Method of generating multiple oxides by plasma nitridation on oxide |
JP2004327489A (ja) * | 2003-04-21 | 2004-11-18 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウェーハ及びその製造方法 |
JP2005051040A (ja) * | 2003-07-29 | 2005-02-24 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法及び半導体基板 |
JP3950868B2 (ja) * | 2004-04-28 | 2007-08-01 | エルピーダメモリ株式会社 | 半導体装置及びその製造方法 |
KR101165108B1 (ko) * | 2004-05-07 | 2012-07-12 | 엠이엠씨 일렉트로닉 머티리얼즈, 인크. | 실리콘 웨이퍼에서 금속성 오염을 줄이기 위한 방법 |
CN100428445C (zh) * | 2005-08-05 | 2008-10-22 | 尔必达存储器株式会社 | 用于制造半导体存储器件的方法 |
JP4639212B2 (ja) * | 2006-09-20 | 2011-02-23 | 富士フイルム株式会社 | 裏面照射型撮像素子の製造方法 |
US20080299780A1 (en) * | 2007-06-01 | 2008-12-04 | Uv Tech Systems, Inc. | Method and apparatus for laser oxidation and reduction |
JP5594978B2 (ja) * | 2009-03-27 | 2014-09-24 | キヤノン株式会社 | 半導体装置の製造方法、及び光電変換装置の製造方法 |
JP5793456B2 (ja) | 2012-03-23 | 2015-10-14 | 株式会社東芝 | 半導体装置およびその製造方法、基板 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52116079A (en) | 1976-03-26 | 1977-09-29 | Hitachi Ltd | Heat treatment of semiconductor device |
US4053335A (en) * | 1976-04-02 | 1977-10-11 | International Business Machines Corporation | Method of gettering using backside polycrystalline silicon |
EP0251280A3 (en) * | 1986-06-30 | 1989-11-23 | Nec Corporation | Method of gettering semiconductor wafers with a laser beam |
KR970011642B1 (ko) * | 1988-03-09 | 1997-07-12 | 테루 사가미 가부시끼가이샤 | 반도체 웨이퍼의 열처리 방법, 열처리 장치 및 열처리용 보우트 |
JP2706527B2 (ja) | 1989-08-21 | 1998-01-28 | 富士通株式会社 | シリコン単結晶ウェハーの加工方法 |
JP2848058B2 (ja) | 1991-09-28 | 1999-01-20 | 信越半導体株式会社 | シリコンウェーハの熱処理方法 |
JPH05275436A (ja) | 1992-03-24 | 1993-10-22 | Shin Etsu Handotai Co Ltd | シリコンウエーハの熱処理方法 |
JP3024409B2 (ja) | 1992-12-25 | 2000-03-21 | 日本電気株式会社 | 半導体装置の製造方法 |
JPH07247197A (ja) * | 1994-03-09 | 1995-09-26 | Fujitsu Ltd | 半導体装置とその製造方法 |
JPH07335656A (ja) | 1994-06-07 | 1995-12-22 | Nippon Steel Corp | ゲッタリング処理方法 |
JP2806277B2 (ja) * | 1994-10-13 | 1998-09-30 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP2743904B2 (ja) * | 1996-02-16 | 1998-04-28 | 日本電気株式会社 | 半導体基板およびこれを用いた半導体装置の製造方法 |
US5851892A (en) * | 1997-05-07 | 1998-12-22 | Cypress Semiconductor Corp. | Fabrication sequence employing an oxide formed with minimized inducted charge and/or maximized breakdown voltage |
-
1997
- 1997-09-30 JP JP26557597A patent/JP3211747B2/ja not_active Expired - Fee Related
-
1998
- 1998-09-29 CN CN98120065.6A patent/CN1111904C/zh not_active Expired - Fee Related
- 1998-09-30 US US09/163,170 patent/US6562733B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100466200C (zh) * | 2004-05-07 | 2009-03-04 | Memc电子材料有限公司 | 减少硅晶片中的金属杂质的方法 |
Also Published As
Publication number | Publication date |
---|---|
US20020037632A1 (en) | 2002-03-28 |
CN1213164A (zh) | 1999-04-07 |
JPH11111723A (ja) | 1999-04-23 |
JP3211747B2 (ja) | 2001-09-25 |
US6562733B2 (en) | 2003-05-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6958092B2 (en) | Epitaxial silicon wafer with intrinsic gettering and a method for the preparation thereof | |
US5308788A (en) | Temperature controlled process for the epitaxial growth of a film of material | |
CN1111904C (zh) | 半导体器件制造方法 | |
KR100877772B1 (ko) | 실리콘 에피택셜 웨이퍼 및 그 제조 방법 | |
CN1317152A (zh) | 制备理想析氧硅晶片的工艺 | |
CN1251206A (zh) | 理想的氧沉淀硅晶片及氧外扩散较小的工艺 | |
CN1825543A (zh) | 半导体衬底的原位净化方法和半导体器件制造方法 | |
US4597804A (en) | Methods of forming denuded zone in wafer by intrinsic gettering and forming bipolar transistor therein | |
CN100345263C (zh) | 具有氮/碳稳定的氧沉淀物成核中心的硅片及其制造方法 | |
JP3381816B2 (ja) | 半導体基板の製造方法 | |
JPH05291097A (ja) | シリコン基板およびその製造方法 | |
US20080242067A1 (en) | Semiconductor substrate and method of manufacture thereof | |
JP4151876B2 (ja) | シリコンウェーハの製造方法 | |
EP1295324A1 (en) | Method and apparatus for forming a silicon wafer with a denuded zone | |
EP0634789A2 (en) | A method of oxidizing a semiconductor wafer | |
JP3890819B2 (ja) | シリコンウェーハの熱処理方法 | |
JP4609029B2 (ja) | アニールウェーハの製造方法 | |
CN1263355A (zh) | 制造薄栅氧化硅层的方法 | |
JPS63164440A (ja) | 半導体装置の製造方法 | |
JPH07335656A (ja) | ゲッタリング処理方法 | |
JPH1192300A (ja) | 半導体基板の製造方法 | |
JP2000290100A (ja) | シリコンウェーハの製造方法 | |
KR100269716B1 (ko) | Ic 제조시 붕소 오염량 감소방법 | |
JPH09102459A (ja) | 半導体ヘテロ界面形成方法 | |
RU2014671C1 (ru) | Способ изготовления фоточувствительного прибора с зарядовой связью |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: TOKYO, JAPAN TO: KANAGAWA, JAPAN |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100901 Address after: Kanagawa, Japan Patentee after: NEC Corp. Address before: Tokyo, Japan Patentee before: NEC Corp. |
|
ASS | Succession or assignment of patent right |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER OWNER: NEC CORP. Effective date: 20101110 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20101110 Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20030618 Termination date: 20150929 |
|
EXPY | Termination of patent right or utility model |