CN110520979B - 基材、利用该基材的模塑封装、基材的制造方法以及模塑封装的制造方法 - Google Patents

基材、利用该基材的模塑封装、基材的制造方法以及模塑封装的制造方法 Download PDF

Info

Publication number
CN110520979B
CN110520979B CN201880024454.9A CN201880024454A CN110520979B CN 110520979 B CN110520979 B CN 110520979B CN 201880024454 A CN201880024454 A CN 201880024454A CN 110520979 B CN110520979 B CN 110520979B
Authority
CN
China
Prior art keywords
concave
region
area
convex
metal particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201880024454.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN110520979A (zh
Inventor
野村匠
小林涉
神田和辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of CN110520979A publication Critical patent/CN110520979A/zh
Application granted granted Critical
Publication of CN110520979B publication Critical patent/CN110520979B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H10W70/417—Bonding materials between chips and die pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • H10W70/457—Materials of metallic layers on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/04—Manufacture or treatment of leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/016—Manufacture or treatment using moulds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/755—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a laterally-adjacent insulating package substrate, interpose or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
CN201880024454.9A 2017-04-14 2018-03-08 基材、利用该基材的模塑封装、基材的制造方法以及模塑封装的制造方法 Active CN110520979B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017-080679 2017-04-14
JP2017080679A JP6724851B2 (ja) 2017-04-14 2017-04-14 基材、それを用いたモールドパーケージ、基材の製造方法、およびモールドパッケージの製造方法
PCT/JP2018/009056 WO2018190046A1 (ja) 2017-04-14 2018-03-08 基材、それを用いたモールドパーケージ、基材の製造方法、およびモールドパッケージの製造方法

Publications (2)

Publication Number Publication Date
CN110520979A CN110520979A (zh) 2019-11-29
CN110520979B true CN110520979B (zh) 2023-11-10

Family

ID=63792333

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880024454.9A Active CN110520979B (zh) 2017-04-14 2018-03-08 基材、利用该基材的模塑封装、基材的制造方法以及模塑封装的制造方法

Country Status (5)

Country Link
US (1) US11114368B2 (enExample)
JP (1) JP6724851B2 (enExample)
CN (1) CN110520979B (enExample)
DE (1) DE112018001998B4 (enExample)
WO (1) WO2018190046A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6777063B2 (ja) 2017-12-20 2020-10-28 株式会社デンソー 電子装置およびその製造方法
US10714418B2 (en) * 2018-03-26 2020-07-14 Texas Instruments Incorporated Electronic device having inverted lead pins
WO2019211941A1 (ja) * 2018-05-01 2019-11-07 株式会社村田製作所 電子デバイスおよびそれを搭載した指紋認証装置
JP7255466B2 (ja) * 2019-12-03 2023-04-11 いすゞ自動車株式会社 樹脂組成物との接合用の金属部材、金属樹脂接合体の製造方法、および金属樹脂接合体
DE112021001570T5 (de) * 2020-03-11 2022-12-22 Rohm Co., Ltd. Halbleiterbauteil
US11784050B2 (en) 2021-04-27 2023-10-10 Micron Technology, Inc. Method of fabricating microelectronic devices and related microelectronic devices, tools, and apparatus
JP2023007028A (ja) * 2021-07-01 2023-01-18 ローム株式会社 半導体装置
DE102023106492A1 (de) * 2023-03-15 2024-09-19 Ams-Osram International Gmbh Leiterrahmen, bauteil mit einem leiterrahmen und verfahren zur herstellung eines leiterrahmens

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002280512A (ja) * 2001-03-19 2002-09-27 Denso Corp リードフレームの製造方法
CN105655259A (zh) * 2014-12-01 2016-06-08 友立材料株式会社 引线框的制造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0832006A (ja) 1994-07-18 1996-02-02 Daido Steel Co Ltd Icパッケージ用リードフレーム材
JP4641605B2 (ja) 2000-09-27 2011-03-02 イビデン株式会社 接着剤、セラミック構造体及びその製造方法
JP4595505B2 (ja) 2004-11-24 2010-12-08 ソニー株式会社 モールド及びその製造方法、パターンの形成方法
KR100819800B1 (ko) 2005-04-15 2008-04-07 삼성테크윈 주식회사 반도체 패키지용 리드 프레임
JP4609172B2 (ja) 2005-04-21 2011-01-12 株式会社デンソー 樹脂封止型半導体装置
JP2007258205A (ja) 2006-03-20 2007-10-04 Denso Corp 電子装置およびその製造方法
US20080001264A1 (en) * 2006-07-03 2008-01-03 Texas Instruments Incorporated Exposed top side copper leadframe manufacturing
JP5691831B2 (ja) * 2011-05-18 2015-04-01 株式会社デンソー 半導体装置およびその製造方法
JP2014093425A (ja) 2012-11-02 2014-05-19 Sumitomo Metal Mining Co Ltd Znを主成分とするはんだ合金との接合部を有する電子部品
JP5983700B2 (ja) 2013-12-09 2016-09-06 株式会社デンソー 半導体装置およびその製造方法、複合成形体
JP6578900B2 (ja) 2014-12-10 2019-09-25 株式会社デンソー 半導体装置及びその製造方法
JP6459656B2 (ja) 2015-03-10 2019-01-30 株式会社村田製作所 接合用部材およびそれを用いた電子部品の実装方法
JP6618328B2 (ja) 2015-10-28 2019-12-11 東亜建設工業株式会社 泥土の脱水処理方法
US10211131B1 (en) * 2017-10-06 2019-02-19 Microchip Technology Incorporated Systems and methods for improved adhesion between a leadframe and molding compound in a semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002280512A (ja) * 2001-03-19 2002-09-27 Denso Corp リードフレームの製造方法
CN105655259A (zh) * 2014-12-01 2016-06-08 友立材料株式会社 引线框的制造方法

Also Published As

Publication number Publication date
DE112018001998T5 (de) 2019-12-24
US11114368B2 (en) 2021-09-07
JP6724851B2 (ja) 2020-07-15
WO2018190046A1 (ja) 2018-10-18
CN110520979A (zh) 2019-11-29
US20200043835A1 (en) 2020-02-06
JP2018182101A (ja) 2018-11-15
DE112018001998B4 (de) 2022-02-03

Similar Documents

Publication Publication Date Title
JP6724851B2 (ja) 基材、それを用いたモールドパーケージ、基材の製造方法、およびモールドパッケージの製造方法
US10504822B2 (en) Semiconductor device
CN1099158C (zh) 电子部件的封闭装置
JP6394634B2 (ja) リードフレーム、パッケージ及び発光装置、並びにこれらの製造方法
JP6958348B2 (ja) 樹脂成形体の製造方法
JP7037368B2 (ja) 半導体装置および半導体装置の製造方法
CN1347153A (zh) 半导体装置及其制造方法
US11189990B2 (en) Semiconductor laser component and method of producing a semiconductor laser component
WO2018163599A1 (ja) 半導体装置、その製造方法および半導体モジュール
CN111565906B (zh) 树脂成形体及其制造方法
JP2012243840A (ja) 半導体装置およびその製造方法
US9384876B2 (en) Chip resistor, mounting structure for chip resistor, and manufacturing method for chip resistor
JP2006165411A (ja) 半導体装置およびその製造方法
JP2019119091A (ja) 物理量センサおよびその製造方法
US20090283897A1 (en) Semiconductor package, method for manufacturing a semiconductor package, an electronic device, method for manufacturing an electronic device
JP2010109255A (ja) 半導体装置
JP2000150543A (ja) 半導体装置の製造方法
JP6965741B2 (ja) 樹脂成形体の製造システムおよび樹脂成形体の製造方法
CN118737839A (zh) 半导体封装件组件的制造方法以及利用该方法获得的半导体封装件组件
US10644210B2 (en) Method of manufacturing light emitting element mounting base member, method of manufacturing light emitting device using the light emitting element mounting base member, light emitting element mounting base member, and light emitting device using the light emitting element mounting base member
JP5568416B2 (ja) 電子デバイスの製造方法
JP4162303B2 (ja) 半導体装置の製造方法
JP7360906B2 (ja) 半導体装置の製造方法及び半導体装置
JP6965740B2 (ja) インサート部品およびその製造方法
TW202538897A (zh) 半導體裝置及其製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant