CN110383457B - 用于晶片键合的牺牲对齐环和自焊接过孔 - Google Patents

用于晶片键合的牺牲对齐环和自焊接过孔 Download PDF

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CN110383457B
CN110383457B CN201880016093.3A CN201880016093A CN110383457B CN 110383457 B CN110383457 B CN 110383457B CN 201880016093 A CN201880016093 A CN 201880016093A CN 110383457 B CN110383457 B CN 110383457B
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substrate
polyimide
electrical contact
forming
top surface
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CN110383457A (zh
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J·H·萨托
B·陈
W·伦迪
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Silicon Storage Technology Inc
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Silicon Storage Technology Inc
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Abstract

本发明提供了一种将第一基底键合到第二基底的方法，其中第一基底包括在第一基底的顶部表面上的第一电接触件，并且其中第二基底包括在第二基底的底部表面上的第二电接触件。该方法包括在第一基底的顶部表面上形成聚酰亚胺块，其中聚酰亚胺块具有圆形的上角，并且将第一基底的顶部表面和第二基底的底部表面朝彼此垂直移动，直至第一电接触件邻接第二电接触件，其中在移动期间，第二基底与聚酰亚胺的圆形的上角接触，致使第一基底和第二基底相对于彼此横向移动。

Description

用于晶片键合的牺牲对齐环和自焊接过孔
相关专利申请
本申请要求2017年3月28日提交的美国临时申请号62/477,963的权益，并且该申请以引用方式并入本文。
技术领域
本发明涉及半导体制造工艺，具体地讲涉及将半导体管芯键合到半导体晶片。
背景技术
目前，对于一些应用，常规管芯堆叠工艺不能够使用期望的精度将管芯成功地键合到晶片。例如，存在要求将包含一种类型的电路(例如，数字处理电路)的管芯键合到包含另一类型电路(例如，模拟电路和存储器)的晶片的应用。管芯包括电连接器(例如，暴露的导体或垫)，该电连接器接触并连接晶片上的互反连接器。为了成功键合，连接器需要在键合之前彼此对齐，使得当管芯键合到晶片时形成可靠的电连接。然而，随着装置几何形状继续收缩，在键合之前将管芯对齐到晶片(并且更具体地讲，每个的连接器)变得更困难，这使得两者之间的电连接要在键合发生的时刻进行。获得所期望的对齐可能需要非常昂贵和复杂的对齐设备。此外，将连接器按压在一起并不总是产生立即和/或持久的电连接。
已提出一种解决方案，其中在键合部位附近形成对齐结构，以在键合期间引导未对齐的管芯适当对齐。当管芯被降低到晶片上时，如果存在任何不对齐，则管芯物理地命中对齐结构并通过该物理接触横向移动，使得在管芯到达晶片时，两者均适当地彼此对齐。使用该对齐技术的常规尝试已针对对齐结构使用诸如Al、二氧化硅或氮化硅之类的材料。然而，这些材料缺乏足够的弹性以在物理接触时有效地引导管芯(对对齐结构和管芯均存在过度损坏)，并且难以使用此类材料形成足够深的对齐结构。管芯与此类刚性对齐结构的碰撞不会有效地将管芯引导到适当位置。中国专利公开CN 102403308提出针对对齐结构使用聚合物，但其未确定任何具体的聚合物来实施该方案。虽然许多类型的聚合物比Al、氧化物或氮化物更具弹性，但是它们在键合期间所必需的高温下过于柔软(例如大于100C)以致不能充当对齐结构，并且它们通常在此类温度下燃烧。
需要一种对齐结构和技术，该对齐结构和技术将管芯可靠地对齐，而不使用昂贵且复杂的对齐设备，但在其键合在一起时有效地允许在管芯与晶片之间产生电连接。
发明内容
上述问题和需要通过将第一基底键合到第二基底的方法来解决，其中第一基底包括在第一基底的顶部表面上的第一电接触件，并且其中第二基底包括在第二基底的底部表面上的电接触件。该方法包括在第一基底的顶部表面上形成聚酰亚胺块，其中聚酰亚胺块具有圆形的上角，并且将第一基底的顶部表面和第二基底的底部表面朝彼此垂直移动，直至第一电接触件邻接第二电接触件，其中在移动期间，第二基底与聚酰亚胺的圆形的上角接触，致使第一基底和第二基底相对于彼此横向移动。
一种将第一基底键合到第二基底的方法，其中第一基底包括在第一基底的顶部表面上的第一电接触件，并且其中第二基底包括在第二基底的底部表面上的第二电接触件。该方法包括：在第一基底的顶部表面上方和第一电接触件上方形成第一材料；形成延伸穿过第一材料的过孔以暴露第一电接触件；在过孔中形成Sn-Cu材料；在第一基底的顶部表面上方形成聚酰亚胺层；选择性地移除聚酰亚胺层的一个或多个部分；在第一基底的顶部表面上留下聚酰亚胺块，其中聚酰亚胺块具有圆形的上角；并且使第一基底的顶部表面和第二基底的底部表面朝向彼此垂直移动，直到Sn-Cu材料邻接第二电接触件，其中在移动期间，第二基底与聚酰亚胺的圆形的上角接触，致使第一基底和第二基底相对于彼此横向移动。
一种键合组件，该键合组件包括：具有顶部表面的第一基底和在该顶部表面上的第一电接触件；具有底部表面的第二基底和在该底部表面上的第二电接触件；以及多个Sn-Cu材料块，所述多个Sn-Cu材料块各自设置在第一电接触件中的一个与第二电接触件中的一个之间并且与第一电接触件的一个和第二电接触件的一个电接触。
通过查看说明书、权利要求书和附图，本发明的其他目的和特征将变得显而易见。
附图说明
图1至图9为示出形成聚酰亚胺对齐结构的步骤的横截面侧视图。
图10至图15是示出将管芯对齐和键合到晶片的步骤的侧面横截面侧视图。
具体实施方式
本发明是一种对齐和电连接技术和用于将管芯的底部表面键合到晶片的顶部表面的对齐结构。晶片可包括基底10，在该基底上形成有电路和其他导电元件并且该基底示于图1中(而不示出在其上形成的电路)，并且包括在基底的顶部表面上的竖直延伸的金属接触件12。为了有利于金属接触件12与管芯之间的键合和电连接，在结构上形成一层绝缘材料层14(例如，层间电介质IMD)并平面化，如图2所示。过孔16形成于绝缘材料层14中，其中每个过孔16向下延伸至并暴露金属接触件12中的一个，如图3所示。过孔16可使用光刻工艺形成，其中光致抗蚀剂在绝缘材料层14上形成并且使用掩模有选择地暴露和显影。然后移除光致抗蚀剂的选择性部分，在每个金属接触件上方暴露绝缘材料层14。然后在绝缘材料层14的暴露部分上进行蚀刻，以在其中产生过孔16。
将Sn-Cu合金层沉积在结构上，填充过孔16。然后使用化学机械抛光(CMP)干蚀刻或向后抛光Sn-Cu合金，使得Sn-Cu合金从绝缘材料层14的顶部表面移除，但留下填充有Sn-Cu接触件18的过孔，如图4所示。在结构上形成钝化层20(无机材料如氧化物或氮化物)。铝垫22可通过选择性地蚀刻穿过钝化层20来在Sn-Cu接触件18上形成，使用铝覆盖结构并在除了钝化层被蚀刻的地方进行铝蚀刻以移除铝，如图5所示。
在该结构上形成第二钝化层24，如图6中所示。该第二钝化层由聚酰亚胺形成。聚酰亚胺24的选择性部分24a在光刻工艺期间暴露于光子，如图7所示。另外地，可使用整个晶片接触掩模来进行该图案化。移除聚酰亚胺24的暴露部分24a，围绕将键合到管芯的Sn-Cu接触件18留下聚酰亚胺的环24b，如图8所示。将聚酰亚胺的环24b固化，制圆其边缘，使得其上角24c逐渐渐变小。通过蚀刻移除环内部的钝化层20，暴露Sn-Cu接触件18，如图9所示。围绕Sn-Cu接触件的所得对齐结构26包括在钝化材料的环20上的聚酰亚胺的环24b，该聚酰亚胺的环具有相对于Sn-Cu接触件的总高度H。在非限制性示例中，对齐结构的总高度H能够是15μm至20μm。
使用机械-机器人辅助的粗对齐，将管芯30(例如，具有底部表面电接触件32的300mm管芯，优选地由铜制成)放置在晶片上并且尽可能地对齐晶片以键合。如图10所示，可存在一些初始横向不对齐。如图11至图13所示，当管芯30在未对齐状态下降低时，其与对齐结构26的聚酰亚胺24b的锥形角24c接触，其中聚酰亚胺吸收冲击(图11)，并且聚酰亚胺的锥形角24c的倾斜轮廓横向偏转管芯(图12)，在其到达晶片时将其引导向其适当对齐(图13)。在最终放置之后，晶片的Sn-Cu接触件18与管芯30上的对应接触件32电接触。优选地施加一定量的力，将管芯30压在晶片上，并且施加热量，直到晶片的Sn-Cu接触件18自动焊接至管芯30的铜接触件32(即，通过在接触件18和接触件32之间产生焊料键合34，如图14所示)。冷却后，键合完成，其中焊料键合34将晶片接触件18和管芯接触件32连接在一起。如图15所示，导线36可在管芯30键合到位后连接到铝接触件22。
使用聚酰亚胺将管芯引导到位(使用适当的机械对齐)具有许多优点。即使具有较小的装置的几何形状，它也允许使用适当形成的电连接将管芯可靠地键合到晶片。聚酰亚胺在高且不易碎的对齐结构(如环)中是感光光可显影的。感光聚酰亚胺显影，并且可在没有额外蚀刻的情况下使用。聚酰亚胺还用作掩模层，以蚀刻钝化层，以暴露Sn-Cu接触件。对齐结构26包括无机碱(即，钝化层20)加上有机上部(即，作为弹性材料的聚酰亚胺顶部部分24b，以与管芯接触、吸收初始接触件的一些冲击并提供对齐校正横向力)。聚酰亚胺24b的锥形侧壁24c有效引导管芯30，同时最小化对任一结构的损坏。过孔与过孔连接的对齐公差大于开口和对齐环临界尺寸限值的变化。在一些情况下，对环和边缘过孔可能存在一些损坏，这就是聚酰亚胺24b优选地牺牲的意义：在键合后优选地全部移除的的原因。此外，在一些应用中，可能期望与聚酰亚胺环相邻的一个或多个电接触件为虚拟接触件，并且实际上不用于电信号(即，没有电连接)。
使用Sn-Cu合金接触件用于自动焊接也具有许多优点。它对于高密度键合(例如，每个管芯数千个键合)可靠地提供电连接形成，并且与聚酰亚胺对齐结构相容。Sn-Cu接触件简单地通过施加热量(以及任选地一些压缩力)形成与管芯的对应铜接触件的焊料连接。Sn-Cu材料具有足够低的熔点以允许在晶片与管芯之间自焊接，而不需要可能损坏晶片或管芯的较高温度。Sn对Cu的相对百分比可以变化。百分比太大的Sn将使CMP困难，并且百分比太大的Cu将使得蚀刻困难。已确定，0.5％至5％ Cu和95％至99.5％ Sn作为总组合物范围的百分比在足够低的温度下达到CMP加工，蚀刻工艺和有效自焊料形成之间的总组合物百分比的理想平衡。虽然使用均一化沉积的Sn-Cu合金材料来形成接触件18是优选的，但也可通过沉积Sn和Cu的交替和重复的离散层来形成接触件18。然后，将进行退火，使得Sn与Cu合金化。
应当理解，本发明不限于上述的和在本文中示出的实施方案，而是涵盖在任何权利要求书的范围内的任何和所有变型形式。举例来说，本文中对本发明的提及并不意在限制任何权利要求书或权利要求术语的范围，而是仅参考可由这些权利要求中的一项或多项权利要求涵盖的一个或多个特征。上文所述的材料、工艺和数值的示例仅为示例性的，而不应视为限制权利要求书。此外，虽然聚酰亚胺对齐结构可以为在围绕管芯放置的位置的连续环，但其不必为环形的(例如，可为正方形或与管芯的形状匹配或相容的任何其它形状)，并且其无需是连续的(例如，其可为具有部分环形状的聚酰亚胺对齐结构的一个或多个单独的块，在接触件的相对侧上具有多个聚酰亚胺块等)。使用Sn-Cu的自焊接方案可在不实现聚酰亚胺对齐结构的情况下实现，反之亦然，然而它们一起使用则会提供优于现有技术的管芯/晶片键合技术的显著优点。将管芯降低到晶片上包括将管芯底部表面朝晶片顶部表面垂直移动。然而，将这些表面放置接触可广泛地通过将两个表面朝彼此垂直移动来实现，这可通过将管芯朝向固定晶片移动、将晶片朝向固定管芯移动或同时使管芯和晶片朝彼此移动来实现。最后，聚酰亚胺对齐结构可在没有潜在的钝化层22的情况下实现。
应当指出的是，如本文所用，术语“在…上方”和“在…上”均包括性地包括“直接在…上”(之间没有设置中间材料、元件或空间)和“间接在…上”(之间设置有中间材料、元件或空间)。类似地，术语“相邻”包括“直接相邻”(之间没有设置中间材料、元件或空间)和“间接相邻”(之间设置有中间材料、元件或空间)，“被安装到”包括“被直接安装到”(之间没有设置中间材料、元件或空间)和“被间接安装到”(之间设置有中间材料、元件或空间)，并且“被电连接到”包括“被直接电连接到”(之间没有将元件电连接在一起的中间材料或元件)和“被间接电连接到”(之间有将元件电连接在一起的中间材料或元件)。例如，“在衬底上方”形成元件可包括在两者间无中间材料/元件的情况下直接在衬底上形成该元件，以及在两者间有一种或多种中间材料/元件的情况下间接在衬底上形成该元件。

Claims (19)

1.一种将第一基底键合到第二基底的方法，其中所述第一基底包括在所述第一基底的顶部表面上的第一电接触件以及在所述顶部表面上的第三电接触件，并且其中所述第二基底包括位于所述第二基底的底部表面上的第二电接触件，所述方法包括：
在所述第一基底的所述顶部表面上形成聚酰亚胺块，其中所述聚酰亚胺块具有圆形的上角；
将所述第一基底的顶部表面和所述第二基底的底部表面朝彼此垂直移动，直至所述第一电接触件邻接所述第二电接触件，其中在所述移动期间，所述第二基底与所述聚酰亚胺的圆形的上角接触，致使所述第一基底和所述第二基底相对于彼此横向移动；
在所述第三电接触件上形成铝垫，其中所述聚酰亚胺块的一部分直接位于所述铝垫上；以及
将导线连接到所述铝垫。
2.根据权利要求1所述的方法，其中所述聚酰亚胺块具有环形形状，所述环形形状环绕所述第一电接触件。
3.根据权利要求1所述的方法，还包括：
形成设置在所述聚酰亚胺块与所述第一基底之间的无机材料层。
4.根据权利要求3所述的方法，其中所述无机材料为以下中的一种：氧化物和氮化物。
5.根据权利要求1所述的方法，其中所述第一电接触件中的每个包括Sn-Cu材料。
6.根据权利要求5所述的方法，其中所述Sn-Cu材料包括按总组合物的百分比介于0.5％至5％之间的Cu。
7.根据权利要求5所述的方法，其中所述第一电接触件中的每个还包括与所述Sn-Cu材料接触的金属块。
8.根据权利要求5所述的方法，还包括：
将热量施加到所述第一电接触件和所述第二电接触件，使得在所述第一电接触件中的每个与所述第二电接触件中的一个之间形成焊料连接。
9.根据权利要求1所述的方法，还包括：
在所述移动之后移除所述聚酰亚胺块。
10.根据权利要求1所述的方法，其中所述聚酰亚胺块的形成包括：
在所述第一基底的顶部表面上形成聚酰亚胺层；
将所述聚酰亚胺层的部分暴露于光；以及
移除所述聚酰亚胺层的暴露于光的所述部分。
11.一种将第一基底键合到第二基底的方法，其中所述第一基底包括在所述第一基底的顶部表面上的第一电接触件以及在所述顶部表面上的第三电接触件，并且其中所述第二基底包括在所述第二基底的底部表面上的第二电接触件，所述方法包括：
在所述第一基底的顶部表面上且在所述第一电接触件上形成第一材料；
形成延伸穿过所述第一材料的过孔，以暴露所述第一电接触件；
在所述过孔中形成Sn-Cu材料；
在所述第一基底的所述顶部表面上形成聚酰亚胺层；
选择性地移除所述聚酰亚胺层的一个或多个部分，在所述第一基底的所述顶部表面上留下所述聚酰亚胺块，其中所述聚酰亚胺块具有圆形的上角；
使所述第一基底的顶部表面和所述第二基底的底部表面朝彼此垂直移动，直至所述Sn-Cu材料邻接所述第二电接触件，其中在所述移动期间，所述第二基底与所述聚酰亚胺的圆形的上角接触，致使所述第一基底和所述第二基底相对于彼此横向移动；
在所述第三电接触件上形成铝垫，其中所述聚酰亚胺块的一部分直接位于所述铝垫上；以及
将导线连接到所述铝垫。
12.根据权利要求11所述的方法，其中所述聚酰亚胺块具有环形形状，所述环形形状环绕所述第一电接触件。
13.根据权利要求11所述的方法，还包括：
在所述聚酰亚胺块与所述第一基底之间形成无机材料层。
14.根据权利要求13所述的方法，其中所述无机材料为以下中的一种：氧化物和氮化物。
15.根据权利要求11所述的方法，其中所述Sn-Cu材料包括按总组合物的百分比介于0.5％至5％之间的Cu。
16.根据权利要求11所述的方法，还包括：
将热量施加到所述Sn-Cu材料，使得在所述Sn-Cu材料与所述第二电接触件之间形成焊料连接。
17.根据权利要求11所述的方法，其中所述Sn-Cu材料的所述形成包括：
形成离散、交替的Sn材料层和Cu材料层；以及
使所述交替的Sn材料层和Cu材料层退火，使得所述Sn材料层与所述Cu材料层形成合金。
18.根据权利要求11所述的方法，其中所述Sn-Cu材料的所述形成包括：
在所述第一材料上和所述过孔中形成Sn-Cu合金层；以及
在所述第一材料上去除所述Sn-Cu合金层，同时将所述Sn-Cu合金留在所述过孔中。
19.根据权利要求11所述的方法，还包括：
在所述移动之后移除所述聚酰亚胺块。
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