CN110192312B - 半导体激光器和用于制造这种半导体激光器的方法 - Google Patents

半导体激光器和用于制造这种半导体激光器的方法 Download PDF

Info

Publication number
CN110192312B
CN110192312B CN201880007155.4A CN201880007155A CN110192312B CN 110192312 B CN110192312 B CN 110192312B CN 201880007155 A CN201880007155 A CN 201880007155A CN 110192312 B CN110192312 B CN 110192312B
Authority
CN
China
Prior art keywords
semiconductor laser
optical element
diffractive optical
semiconductor
optically effective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201880007155.4A
Other languages
English (en)
Chinese (zh)
Other versions
CN110192312A (zh
Inventor
胡贝特·哈尔布里特
安德烈亚斯·普洛斯尔
罗兰德·海因里希·恩茨曼
马丁·鲁道夫·贝林格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to CN202111030865.9A priority Critical patent/CN113872048B/zh
Publication of CN110192312A publication Critical patent/CN110192312A/zh
Application granted granted Critical
Publication of CN110192312B publication Critical patent/CN110192312B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CN201880007155.4A 2017-01-19 2018-01-09 半导体激光器和用于制造这种半导体激光器的方法 Active CN110192312B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111030865.9A CN113872048B (zh) 2017-01-19 2018-01-09 半导体激光器和用于制造这种半导体激光器的方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102017100997.3 2017-01-19
DE102017100997.3A DE102017100997A1 (de) 2017-01-19 2017-01-19 Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers
PCT/EP2018/050459 WO2018134086A1 (de) 2017-01-19 2018-01-09 Halbleiterlaser und verfahren zur herstellung eines solchen halbleiterlasers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202111030865.9A Division CN113872048B (zh) 2017-01-19 2018-01-09 半导体激光器和用于制造这种半导体激光器的方法

Publications (2)

Publication Number Publication Date
CN110192312A CN110192312A (zh) 2019-08-30
CN110192312B true CN110192312B (zh) 2021-09-24

Family

ID=61017905

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201880007155.4A Active CN110192312B (zh) 2017-01-19 2018-01-09 半导体激光器和用于制造这种半导体激光器的方法
CN202111030865.9A Active CN113872048B (zh) 2017-01-19 2018-01-09 半导体激光器和用于制造这种半导体激光器的方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202111030865.9A Active CN113872048B (zh) 2017-01-19 2018-01-09 半导体激光器和用于制造这种半导体激光器的方法

Country Status (6)

Country Link
US (1) US10797469B2 (enExample)
JP (2) JP6970748B2 (enExample)
CN (2) CN110192312B (enExample)
DE (2) DE102017100997A1 (enExample)
TW (1) TWI687006B (enExample)
WO (1) WO2018134086A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018102961A1 (en) * 2016-12-05 2018-06-14 Goertek.Inc Micro laser diode transfer method and manufacturing method
US10535799B2 (en) 2017-05-09 2020-01-14 Epistar Corporation Semiconductor device
DE102017112235A1 (de) 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Laserdiode und Verfahren zum Herstellen einer Laserdiode
EP3657660B1 (en) 2017-09-22 2021-07-07 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Power supply circuit, power supply device, and control method
DE102017122325A1 (de) 2017-09-26 2019-03-28 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung von strahlungsemittierenden Halbleiterbauelementen
DE102018123931A1 (de) * 2018-09-27 2020-04-02 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement mit Saphirträger und Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements
DE102019100794A1 (de) * 2018-12-20 2020-06-25 Osram Opto Semiconductors Gmbh Laservorrichtung und verfahren zur herstellung einer laservorrichtung
DE102019104986A1 (de) * 2019-02-27 2020-08-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
US11025033B2 (en) * 2019-05-21 2021-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Bump bonding structure to mitigate space contamination for III-V dies and CMOS dies
DE102020118159A1 (de) 2020-07-09 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laservorrichtung
US20220109287A1 (en) * 2020-10-01 2022-04-07 Vixar, Inc. Metalens Array and Vertical Cavity Surface Emitting Laser Systems and Methods
JP2022082100A (ja) * 2020-11-20 2022-06-01 国立大学法人東京工業大学 光偏向デバイス
DE102022103260A1 (de) * 2022-02-11 2023-08-17 Ams-Osram International Gmbh Laserbauelement
FR3146242B1 (fr) * 2023-02-27 2025-02-14 Soitec Silicon On Insulator Structure semi-conductrice pour former des diodes laser a cavite verticale
TWI878998B (zh) 2023-07-31 2025-04-01 台亞半導體股份有限公司 電致發光元件

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1448000A (zh) * 2000-07-12 2003-10-08 普林斯顿光电子学公司 用于半导体激光器泵浦的固体激光器系统中的具有集成微透镜的vcsel及vcsel阵列
CN1463480A (zh) * 2001-02-20 2003-12-24 奥斯兰姆奥普托半导体有限责任公司 光抽运的表面发射半导体激光器件及其制造方法
CN1722553A (zh) * 2004-03-05 2006-01-18 安捷伦科技有限公司 具有集成透镜的垂直腔表面发射激光器
WO2006022162A1 (ja) * 2004-08-25 2006-03-02 Hamamatsu Photonics K.K. 面発光レーザ光源の製造方法及び面発光レーザ光源
TWI258198B (en) * 2005-09-19 2006-07-11 Chunghwa Telecom Co Ltd A method applying a transparent electrode having microlens form in VCSEL
CN1957507A (zh) * 2004-05-28 2007-05-02 奥斯兰姆奥普托半导体有限责任公司 具有垂直发射方向的表面发射的半导体激光器部件
CN101688977A (zh) * 2007-06-04 2010-03-31 诺基亚公司 衍射扩束器和基于衍射扩束器的虚拟显示器
CN102610997A (zh) * 2011-01-18 2012-07-25 安华高科技光纤Ip（新加坡）私人有限公司 表面发射半导体激光器装置
CN102709808A (zh) * 2012-05-29 2012-10-03 中国科学院长春光学精密机械与物理研究所 微透镜集成垂直腔面发射激光器的相干控制阵列结构
CN104319625A (zh) * 2009-10-30 2015-01-28 欧司朗光电半导体有限公司 边发射半导体激光器
CN204269928U (zh) * 2014-11-14 2015-04-15 华锦光电科技股份有限公司 半导体激光-衍射光学元件模组

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0827407B2 (ja) * 1993-06-02 1996-03-21 日本電気株式会社 微細グレーティング形成方法
JP3243772B2 (ja) * 1993-12-21 2002-01-07 日本電信電話株式会社 面発光半導体レーザ
JP2000070707A (ja) 1998-09-01 2000-03-07 Sony Corp 光触媒装置
US7265439B1 (en) 1999-11-30 2007-09-04 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Low cost, high speed, high efficiency infrared transceiver
KR100657252B1 (ko) 2000-01-20 2006-12-14 삼성전자주식회사 근접장 기록재생용 광헤드 및 그 제조방법
JP2002026452A (ja) 2000-07-12 2002-01-25 Toyota Central Res & Dev Lab Inc 面発光型光源及びその製造方法、レーザ加工機用光源
JP2002368334A (ja) * 2001-03-26 2002-12-20 Seiko Epson Corp 面発光レーザ、フォトダイオード、それらの製造方法及びそれらを用いた光電気混載回路
US6775308B2 (en) 2001-06-29 2004-08-10 Xanoptix, Inc. Multi-wavelength semiconductor laser arrays and applications thereof
CN100583578C (zh) 2002-03-08 2010-01-20 夏普株式会社 光源装置及使用该光源装置的光通信模块
JP2004279634A (ja) 2003-03-14 2004-10-07 Nikon Corp 光学部品とその製造方法及び露光装置
JP4092570B2 (ja) 2003-07-23 2008-05-28 セイコーエプソン株式会社 光素子およびその製造方法、光モジュール、ならびに光モジュールの駆動方法
US6947224B2 (en) 2003-09-19 2005-09-20 Agilent Technologies, Inc. Methods to make diffractive optical elements
US20050067681A1 (en) 2003-09-26 2005-03-31 Tessera, Inc. Package having integral lens and wafer-scale fabrication method therefor
US7289547B2 (en) 2003-10-29 2007-10-30 Cubic Wafer, Inc. Laser and detector device
WO2005071808A1 (ja) 2004-01-23 2005-08-04 Nec Corporation 面発光レーザ
EP1569276A1 (en) 2004-02-27 2005-08-31 Heptagon OY Micro-optics on optoelectronics
JP5017804B2 (ja) 2005-06-15 2012-09-05 富士ゼロックス株式会社 トンネル接合型面発光半導体レーザ装置およびその製造方法
US7295375B2 (en) * 2005-08-02 2007-11-13 International Business Machines Corporation Injection molded microlenses for optical interconnects
JP2007049017A (ja) 2005-08-11 2007-02-22 Ricoh Co Ltd 光電気変換モジュール
JP2007214669A (ja) 2006-02-07 2007-08-23 Rohm Co Ltd 光通信システム
JP4970217B2 (ja) 2007-11-07 2012-07-04 株式会社東芝 物質の測定方法
DE102008012859B4 (de) * 2007-12-21 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Filterstruktur
WO2009143462A2 (en) 2008-05-22 2009-11-26 Vi Systems Gmbh Method for attaching optical components onto silicon-based integrated circuits
DE102008048903B4 (de) * 2008-09-25 2021-06-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauteil
JP2010147315A (ja) 2008-12-19 2010-07-01 Fuji Xerox Co Ltd 光半導体装置、光伝送装置及び面発光素子
JP2010212664A (ja) * 2009-02-10 2010-09-24 Renesas Electronics Corp 半導体レーザとその製造方法
US10244181B2 (en) * 2009-02-17 2019-03-26 Trilumina Corp. Compact multi-zone infrared laser illuminator
US9232592B2 (en) * 2012-04-20 2016-01-05 Trilumina Corp. Addressable illuminator with eye-safety circuitry
JP2014096419A (ja) 2012-11-07 2014-05-22 Stanley Electric Co Ltd 光電子デバイス
CN105874662B (zh) 2013-04-22 2019-02-22 三流明公司 用于高频率操作的光电器件的多光束阵列的微透镜
DE102013104270A1 (de) * 2013-04-26 2014-10-30 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
US20150311673A1 (en) * 2014-04-29 2015-10-29 Princeton Optronics Inc. Polarization Control in High Peak Power, High Brightness VCSEL
JP6331997B2 (ja) 2014-11-28 2018-05-30 三菱電機株式会社 半導体光素子
JP6487195B2 (ja) * 2014-12-09 2019-03-20 日本オクラロ株式会社 半導体光集積素子、半導体光集積素子の製造方法及び光モジュール
EP3130950A1 (de) * 2015-08-10 2017-02-15 Multiphoton Optics Gmbh Strahlumlenkelement sowie optisches bauelement mit strahlumlenkelement
DE102016116747A1 (de) 2016-09-07 2018-03-08 Osram Opto Semiconductors Gmbh Diffraktives optisches element und verfahren zu seiner herstellung

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1448000A (zh) * 2000-07-12 2003-10-08 普林斯顿光电子学公司 用于半导体激光器泵浦的固体激光器系统中的具有集成微透镜的vcsel及vcsel阵列
CN1463480A (zh) * 2001-02-20 2003-12-24 奥斯兰姆奥普托半导体有限责任公司 光抽运的表面发射半导体激光器件及其制造方法
CN1722553A (zh) * 2004-03-05 2006-01-18 安捷伦科技有限公司 具有集成透镜的垂直腔表面发射激光器
CN1957507A (zh) * 2004-05-28 2007-05-02 奥斯兰姆奥普托半导体有限责任公司 具有垂直发射方向的表面发射的半导体激光器部件
WO2006022162A1 (ja) * 2004-08-25 2006-03-02 Hamamatsu Photonics K.K. 面発光レーザ光源の製造方法及び面発光レーザ光源
TWI258198B (en) * 2005-09-19 2006-07-11 Chunghwa Telecom Co Ltd A method applying a transparent electrode having microlens form in VCSEL
CN101688977A (zh) * 2007-06-04 2010-03-31 诺基亚公司 衍射扩束器和基于衍射扩束器的虚拟显示器
CN104319625A (zh) * 2009-10-30 2015-01-28 欧司朗光电半导体有限公司 边发射半导体激光器
CN102610997A (zh) * 2011-01-18 2012-07-25 安华高科技光纤Ip（新加坡）私人有限公司 表面发射半导体激光器装置
CN102709808A (zh) * 2012-05-29 2012-10-03 中国科学院长春光学精密机械与物理研究所 微透镜集成垂直腔面发射激光器的相干控制阵列结构
CN204269928U (zh) * 2014-11-14 2015-04-15 华锦光电科技股份有限公司 半导体激光-衍射光学元件模组

Also Published As

Publication number Publication date
CN113872048B (zh) 2024-07-02
JP2019536287A (ja) 2019-12-12
TW201832434A (zh) 2018-09-01
DE112018000431A5 (de) 2019-09-26
DE112018000431B4 (de) 2022-03-17
JP6970748B2 (ja) 2021-11-24
US10797469B2 (en) 2020-10-06
US20190245326A1 (en) 2019-08-08
CN110192312A (zh) 2019-08-30
WO2018134086A1 (de) 2018-07-26
DE102017100997A1 (de) 2018-07-19
TWI687006B (zh) 2020-03-01
CN113872048A (zh) 2021-12-31
JP7232883B2 (ja) 2023-03-03
JP2022009737A (ja) 2022-01-14

Similar Documents

Publication Publication Date Title
CN110192312B (zh) 半导体激光器和用于制造这种半导体激光器的方法
EP3669430B1 (en) A surface-mount compatible vcsel array
CN101681964B (zh) 用于制造光电子器件的方法以及光电子器件
JP6099752B2 (ja) オプトエレクトロニクスコンポーネントの製造方法、およびオプトエレクトロニクスコンポーネント
JP5355536B2 (ja) 光電素子および光電素子の製造方法
KR101457247B1 (ko) 광전 소자
KR20100028654A (ko) 복수 개의 광전 소자들의 제조 방법 및 광전 소자
US9653670B2 (en) Method for producing an optoelectronic semiconductor component, and optoelectronic semiconductor component
JP2015513226A (ja) 発光半導体部品および発光半導体部品の製造方法
US10854793B2 (en) Method for producing an optoelectronic component and optoelectronic component
US20180309030A1 (en) Light-emitting diode and method of producing a light-emitting diode
US12142712B2 (en) Radiation-emitting semiconductor component and method for producing radiation-emitting semiconductor component
CN114365296B (zh) 用于制造发射辐射的半导体芯片的方法、发射辐射的半导体芯片和发射辐射的器件
US20120193669A1 (en) Contacting an Optoelectronic Semiconductor Component Through a Conversion Element and Corresponding Optoelectronic Semiconductor Component
CN117999659A (zh) 发光半导体芯片和用于制造发光半导体芯片的方法
CN116195078A (zh) 光电器件和用于制造光电器件的方法
CN104704642B (zh) 用于制造光电子器件的方法
US20210126155A1 (en) Method for Producing a Component and Optoelectronic Component
US20170345981A1 (en) Light-emitting device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant