CN102610997A - 表面发射半导体激光器装置 - Google Patents
表面发射半导体激光器装置 Download PDFInfo
- Publication number
- CN102610997A CN102610997A CN2012100207953A CN201210020795A CN102610997A CN 102610997 A CN102610997 A CN 102610997A CN 2012100207953 A CN2012100207953 A CN 2012100207953A CN 201210020795 A CN201210020795 A CN 201210020795A CN 102610997 A CN102610997 A CN 102610997A
- Authority
- CN
- China
- Prior art keywords
- laser
- face
- polymeric material
- refraction
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 72
- 239000000463 material Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims description 31
- 239000011248 coating agent Substances 0.000 claims description 27
- 238000000576 coating method Methods 0.000 claims description 27
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 241000219739 Lens Species 0.000 claims 14
- 210000000695 crystalline len Anatomy 0.000 claims 14
- 239000002861 polymer material Substances 0.000 abstract 5
- 239000010410 layer Substances 0.000 description 22
- 230000003287 optical effect Effects 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 6
- 238000000609 electron-beam lithography Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/008,239 US8582618B2 (en) | 2011-01-18 | 2011-01-18 | Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive or refractive lens on the semiconductor laser device |
US13/008,239 | 2011-01-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102610997A true CN102610997A (zh) | 2012-07-25 |
CN102610997B CN102610997B (zh) | 2015-04-01 |
Family
ID=46490725
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210020795.3A Active CN102610997B (zh) | 2011-01-18 | 2012-01-18 | 表面发射半导体激光器装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8582618B2 (zh) |
CN (1) | CN102610997B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110192312A (zh) * | 2017-01-19 | 2019-08-30 | 欧司朗光电半导体有限公司 | 半导体激光器和用于制造这种半导体激光器的方法 |
CN113594851A (zh) * | 2021-06-15 | 2021-11-02 | 中国工程物理研究院应用电子学研究所 | 一种高亮度锥形半导体激光器 |
CN114659755A (zh) * | 2018-09-12 | 2022-06-24 | 苹果公司 | 检测光学成像模块的对准损耗 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8582618B2 (en) | 2011-01-18 | 2013-11-12 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive or refractive lens on the semiconductor laser device |
US8315287B1 (en) | 2011-05-03 | 2012-11-20 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd | Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive lens, and a method for making the device |
JP2013016648A (ja) * | 2011-07-04 | 2013-01-24 | Sumitomo Electric Ind Ltd | 半導体光集積素子の製造方法 |
US9423297B2 (en) * | 2011-12-22 | 2016-08-23 | 3M Innovative Properties Company | Optical device with optical element and sensor for sampling light |
US8982921B2 (en) | 2013-02-07 | 2015-03-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor lasers and etched-facet integrated devices having H-shaped windows |
US8927306B2 (en) | 2013-02-28 | 2015-01-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Etched-facet lasers having windows with single-layer optical coatings |
JP7449042B2 (ja) * | 2019-02-28 | 2024-03-13 | 日本ルメンタム株式会社 | 光電変換素子、光サブアセンブリ及び光電変換素子の製造方法 |
US11404844B2 (en) * | 2019-06-13 | 2022-08-02 | Omnivision Technologies, Inc. | Semiconductor structure and method of manufacturing the same |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04216328A (ja) * | 1990-12-13 | 1992-08-06 | Olympus Optical Co Ltd | 光学ピックアップ装置 |
JPH07123175B2 (ja) * | 1986-09-17 | 1995-12-25 | 株式会社リコー | 半導体レ−ザ装置 |
JPH09312439A (ja) * | 1996-05-23 | 1997-12-02 | Sony Corp | 光学素子及びその作製方法 |
WO2001093385A2 (en) * | 2000-05-31 | 2001-12-06 | Nova Crystals, Inc. | Surface-emitting laser devices with integrated beam-shaping optics and power-monitoring detectors |
US6459716B1 (en) * | 2001-02-01 | 2002-10-01 | Nova Crystals, Inc. | Integrated surface-emitting laser and modulator device |
US6924511B2 (en) * | 2002-01-03 | 2005-08-02 | Arima Optoelectronics Corp. | Vertical cavity surface emitting semiconductor laser with triangle prism optical cavity resonator |
US20080037929A1 (en) * | 2006-08-14 | 2008-02-14 | Samsung Electro-Mechanics Co., Ltd. | Optical printed circuit board and fabricating method thereof |
JP2010003883A (ja) * | 2008-06-20 | 2010-01-07 | Opnext Japan Inc | 半導体レーザ素子、光モジュールおよび光トランシーバ |
US20100111126A1 (en) * | 2008-10-30 | 2010-05-06 | Junichiro Shimizu | Semiconductor lasers |
Family Cites Families (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4990465A (en) | 1985-01-22 | 1991-02-05 | Massachusetts Institute Of Technology | Method of forming a surface emitting laser |
FR2581768B1 (fr) | 1985-05-10 | 1987-09-04 | Thomson Csf | Composant optoelectrique bidirectionnel formant coupleur optique |
JPS62158377A (ja) | 1985-12-28 | 1987-07-14 | Sony Corp | 分布帰還型半導体レ−ザ− |
US4821997A (en) | 1986-09-24 | 1989-04-18 | The Board Of Trustees Of The Leland Stanford Junior University | Integrated, microminiature electric-to-fluidic valve and pressure/flow regulator |
US4972479A (en) | 1987-07-10 | 1990-11-20 | Tobias Jr Ray W | Method and apparatus for providing privacy/security in a communication system |
JP2590902B2 (ja) * | 1987-07-30 | 1997-03-19 | ソニー株式会社 | 発光・受光複合素子 |
JPH02231786A (ja) | 1989-03-06 | 1990-09-13 | Matsushita Electric Ind Co Ltd | 面発光レーザ装置およびその製造方法 |
DE3914835C1 (zh) | 1989-05-05 | 1990-07-26 | Ant Nachrichtentechnik Gmbh, 7150 Backnang, De | |
DE69009448T2 (de) | 1990-03-08 | 1994-12-01 | Ibm | Halbleiterlaseranordnung. |
EP0483438B1 (en) * | 1990-10-30 | 1996-01-17 | International Business Machines Corporation | Integrated optical head structure |
US5159603A (en) | 1991-06-05 | 1992-10-27 | United States Of America As Represented By The Administrator, National Aeronautics And Space Administration | Quantum well, beam deflecting surface emitting lasers |
US5492607A (en) | 1993-02-17 | 1996-02-20 | Hughes Aircraft Company | Method of fabricating a surface emitting laser with large area deflecting mirror |
US5463649A (en) | 1993-08-06 | 1995-10-31 | Sandia Corporation | Monolithically integrated solid state laser and waveguide using spin-on glass |
GB2285332A (en) | 1993-12-30 | 1995-07-05 | At & T Corp | Integrated laser/modulators |
WO1996022177A1 (de) | 1995-01-18 | 1996-07-25 | Robert Bosch Gmbh | Anordnung zur umsetzung von optischen in elektrische signale und verfahren zur herstellung |
DE19510559C1 (de) | 1995-03-23 | 1996-07-25 | Bosch Gmbh Robert | Optische Sende- und Empfangsanordnung |
US5912872A (en) | 1996-09-27 | 1999-06-15 | Digital Optics Corporation | Integrated optical apparatus providing separated beams on a detector and associated methods |
DE19652529A1 (de) | 1996-12-17 | 1998-06-18 | Siemens Ag | Optoelektronisches Bauelement mit MQW-Strukturen |
JP2000196173A (ja) | 1998-12-28 | 2000-07-14 | Sharp Corp | 半導体レ―ザ装置 |
US6424669B1 (en) | 1999-10-29 | 2002-07-23 | E20 Communications, Inc. | Integrated optically pumped vertical cavity surface emitting laser |
EP1158695B1 (en) * | 2000-05-23 | 2008-08-06 | NTT DoCoMo, Inc. | Space multiplex radio communication method and apparatus |
GB0018576D0 (en) | 2000-07-27 | 2000-09-13 | Univ Glasgow | Improved semiconductor laser |
WO2002057821A1 (en) | 2001-01-19 | 2002-07-25 | Primarion, Inc. | Optical interconnect with integral reflective surface and lens, system including the interconnect and method of forming the same |
US20020159491A1 (en) | 2001-04-26 | 2002-10-31 | Wenbin Jiang | Surface emitting laser |
US20020163865A1 (en) | 2001-05-01 | 2002-11-07 | Zimmer Erik J. | Optical pickup unit assembly process |
US6973110B2 (en) | 2002-02-22 | 2005-12-06 | Infineon Technologies Ag | Monolithic laser configuration |
US7180929B2 (en) | 2002-04-18 | 2007-02-20 | Intel Corporation | Wafer-level test structure for edge-emitting semiconductor lasers |
US7120178B2 (en) | 2002-06-15 | 2006-10-10 | Intel Corporation | Chip carrier apparatus and method |
US8442084B2 (en) | 2002-10-03 | 2013-05-14 | Laser Operations Llc | High performance vertically emitting lasers |
US20040101020A1 (en) | 2002-11-26 | 2004-05-27 | Photodigm, Inc. | Packaging and passive alignment of light source to single mode fiber using microlens and precision ferrule |
US7018861B2 (en) | 2003-01-24 | 2006-03-28 | Agilent Technologies, Inc. | Method of manufacturing integrated semiconductor devices and related devices |
DE10305171B4 (de) | 2003-01-31 | 2007-11-29 | Infineon Technologies Ag | Bidirektionales optisches Sende- und Empfangsmodul |
EP1479648A3 (en) | 2003-05-23 | 2005-10-19 | Rohm and Haas Electronic Materials, L.L.C. | Etching process for micromachining crystalline materials and devices fabricated thereby |
EP1515364B1 (en) | 2003-09-15 | 2016-04-13 | Nuvotronics, LLC | Device package and methods for the fabrication and testing thereof |
US6953990B2 (en) | 2003-09-19 | 2005-10-11 | Agilent Technologies, Inc. | Wafer-level packaging of optoelectronic devices |
US20050063431A1 (en) | 2003-09-19 | 2005-03-24 | Gallup Kendra J. | Integrated optics and electronics |
EP1680843A4 (en) | 2003-10-20 | 2009-05-06 | Binoptics Corp | PHOTONIC EQUIPMENT WITH SURFACE EMISSION AND RECEPTION |
US7045827B2 (en) | 2004-06-24 | 2006-05-16 | Gallup Kendra J | Lids for wafer-scale optoelectronic packages |
US7213982B2 (en) | 2004-10-07 | 2007-05-08 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Optoelectronic module with high coupling efficiency |
US7376169B2 (en) | 2005-03-07 | 2008-05-20 | Joseph Reid Henrichs | Optical phase conjugation laser diode |
US7450623B2 (en) * | 2005-04-12 | 2008-11-11 | Eric G. Johnson | Wavelength locked laser including integrated wavelength selecting total internal reflection (TIR) structure |
US7750356B2 (en) | 2005-05-04 | 2010-07-06 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Silicon optical package with 45 degree turning mirror |
JP2007005594A (ja) * | 2005-06-24 | 2007-01-11 | Opnext Japan Inc | 半導体光素子及びそれを用いたモジュール |
US20070047609A1 (en) | 2005-08-30 | 2007-03-01 | Francis Daniel A | Wafer testing of edge emitting lasers |
JP2008277445A (ja) * | 2007-04-26 | 2008-11-13 | Opnext Japan Inc | 半導体レーザおよび光モジュール |
US7450621B1 (en) * | 2007-06-26 | 2008-11-11 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Integrated laser-diffractive lens device |
US8009712B2 (en) | 2008-05-07 | 2011-08-30 | Stc.Unm | Light-emitting device having injection-lockable semiconductor ring laser monolithically integrated with master laser |
US20100290489A1 (en) | 2009-05-15 | 2010-11-18 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | electro-absorption modulated laser (eml) assembly having a 1/4 wavelength phase shift located in the forward portion of the distributed feedback (dfb) of the eml assembly, and a method |
US8582618B2 (en) | 2011-01-18 | 2013-11-12 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive or refractive lens on the semiconductor laser device |
US20120195336A1 (en) | 2011-02-01 | 2012-08-02 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Semiconductor laser device in which an edge-emitting laser is integrated with a reflector to form a surface-emitting semiconductor laser device |
US8315287B1 (en) * | 2011-05-03 | 2012-11-20 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd | Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive lens, and a method for making the device |
-
2011
- 2011-01-18 US US13/008,239 patent/US8582618B2/en active Active
-
2012
- 2012-01-18 CN CN201210020795.3A patent/CN102610997B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07123175B2 (ja) * | 1986-09-17 | 1995-12-25 | 株式会社リコー | 半導体レ−ザ装置 |
JPH04216328A (ja) * | 1990-12-13 | 1992-08-06 | Olympus Optical Co Ltd | 光学ピックアップ装置 |
JPH09312439A (ja) * | 1996-05-23 | 1997-12-02 | Sony Corp | 光学素子及びその作製方法 |
WO2001093385A2 (en) * | 2000-05-31 | 2001-12-06 | Nova Crystals, Inc. | Surface-emitting laser devices with integrated beam-shaping optics and power-monitoring detectors |
US6459716B1 (en) * | 2001-02-01 | 2002-10-01 | Nova Crystals, Inc. | Integrated surface-emitting laser and modulator device |
US6924511B2 (en) * | 2002-01-03 | 2005-08-02 | Arima Optoelectronics Corp. | Vertical cavity surface emitting semiconductor laser with triangle prism optical cavity resonator |
US20080037929A1 (en) * | 2006-08-14 | 2008-02-14 | Samsung Electro-Mechanics Co., Ltd. | Optical printed circuit board and fabricating method thereof |
JP2010003883A (ja) * | 2008-06-20 | 2010-01-07 | Opnext Japan Inc | 半導体レーザ素子、光モジュールおよび光トランシーバ |
US20100111126A1 (en) * | 2008-10-30 | 2010-05-06 | Junichiro Shimizu | Semiconductor lasers |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110192312A (zh) * | 2017-01-19 | 2019-08-30 | 欧司朗光电半导体有限公司 | 半导体激光器和用于制造这种半导体激光器的方法 |
US10797469B2 (en) | 2017-01-19 | 2020-10-06 | Osram Oled Gmbh | Semiconductor laser and method for producing such a semiconductor laser |
CN110192312B (zh) * | 2017-01-19 | 2021-09-24 | 欧司朗光电半导体有限公司 | 半导体激光器和用于制造这种半导体激光器的方法 |
CN114659755A (zh) * | 2018-09-12 | 2022-06-24 | 苹果公司 | 检测光学成像模块的对准损耗 |
CN113594851A (zh) * | 2021-06-15 | 2021-11-02 | 中国工程物理研究院应用电子学研究所 | 一种高亮度锥形半导体激光器 |
CN113594851B (zh) * | 2021-06-15 | 2023-06-02 | 中国工程物理研究院应用电子学研究所 | 一种高亮度锥形半导体激光器 |
Also Published As
Publication number | Publication date |
---|---|
CN102610997B (zh) | 2015-04-01 |
US8582618B2 (en) | 2013-11-12 |
US20120183007A1 (en) | 2012-07-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102610997B (zh) | 表面发射半导体激光器装置 | |
US8315287B1 (en) | Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive lens, and a method for making the device | |
US5164956A (en) | Multiperiod-grating surface-emitting lasers | |
US7245645B2 (en) | Surface emitting and receiving photonic device with lens | |
US20120195336A1 (en) | Semiconductor laser device in which an edge-emitting laser is integrated with a reflector to form a surface-emitting semiconductor laser device | |
CA2143944C (en) | Multi-stripe array grating integrated cavity laser | |
US9859687B2 (en) | Lasers with beam-shape modification | |
US8064493B2 (en) | Surface emitting photonic device | |
US20090097522A1 (en) | Vertical cavity surface emitting laser device | |
US20020003824A1 (en) | Surface-emitting laser devices with integrated beam-shaping optics and power-monitoring detectors | |
JP5133052B2 (ja) | 多段一体型の光デバイス | |
US20050213626A1 (en) | High performance vertically emitting lasers | |
US20080002749A1 (en) | Material processing method for semiconductor lasers | |
WO2023047130A1 (en) | Etched-facet photonic devices with improved anti-reflection coating | |
CN115207766A (zh) | 一种直线光束激光器及封装激光阵列 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) CORPORAT Free format text: FORMER OWNER: AVAGO TECHNOLOGIES ECBU IP Effective date: 20130419 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20130419 Address after: Singapore Singapore Applicant after: Avago Technologies General IP (Singapore) Pte. Ltd. Address before: Singapore Singapore Applicant before: AGILENT TECHNOLOGIES, Inc. |
|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20181029 Address after: Singapore Singapore Patentee after: Avago Technologies General IP (Singapore) Pte. Ltd. Address before: Singapore Singapore Patentee before: Avago Technologies General IP (Singapore) Pte. Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201026 Address after: Singapore City Patentee after: Broadcom International Pte. Ltd. Address before: Singapore City Patentee before: Avago Technologies General IP (Singapore) Pte. Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230414 Address after: Singapore, Singapore Patentee after: Avago Technologies General IP (Singapore) Pte. Ltd. Address before: Singapore, Singapore Patentee before: Broadcom International Pte. Ltd. |
|
TR01 | Transfer of patent right |