Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
  • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
  • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
  • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
  • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
  • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/022—Mountings; Housings
  • H01S5/0225—Out-coupling of light
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/022—Mountings; Housings
  • H01S5/0233—Mounting configuration of laser chips
  • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
  • H01S5/042—Electrical excitation ; Circuits therefor
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
  • H01S5/042—Electrical excitation ; Circuits therefor
  • H01S5/0425—Electrodes, e.g. characterised by the structure
  • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
  • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
  • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
  • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
  • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
  • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
  • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
  • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
  • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
  • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
  • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
  • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
  • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
  • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
  • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
  • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
  • H01S5/18388—Lenses
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
  • H01S5/42—Arrays of surface emitting lasers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
  • H01S5/42—Arrays of surface emitting lasers
  • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S2301/00—Functional characteristics
  • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/022—Mountings; Housings
  • H01S5/0233—Mounting configuration of laser chips
  • H01S5/02345—Wire-bonding
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
  • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
  • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
  • H01S5/18341—Intra-cavity contacts
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
  • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
  • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
  • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection

Definitions

• An object to be solved is to provide a semiconductor laser that can be produced eye safe and efficient.
• Semiconductor laser one or more semiconductor laser chips.
• the at least one semiconductor laser chip comprises a
• the semiconductor layer sequence includes one or more active zones for generating laser radiation.
• the semiconductor laser chip has a light exit surface. At the light exit surface, the emission of the laser radiation takes place.
• the at least one semiconductor laser chip is one
• the semiconductor laser chip emits the laser radiation generated during operation at a comparatively large surface.
• Semiconductor laser chip which emits laser radiation is is preferably oriented perpendicular or approximately perpendicular to a growth direction of the semiconductor layer sequence, so that a resonator direction parallel or approximately parallel to the growth direction. Approximately means here and below in particular with a
• edge emitters have one
• the semiconductor layer sequence is preferably based on a 13-15 compound semiconductor material.
• the semiconductor material is, for example, a nitride compound semiconductor material such as Al n In] __ n _ m N m Ga or a phosphide compound semiconductor material such as
• Compound semiconductor material such as Al n In ] __ n _ m Ga m As or as Al n Ga m In ] __ n _ m AskP ] __k, where each 0 ⁇ n 1, 0 ⁇ m 1 and n + m ⁇ 1 and 0 -S k ⁇ 1.
• Semiconductor laser at least one diffractive optical element, short DoE.
• the diffractive optical element (s) are for expanding and distributing the laser radiation set up, in particular for distributing the laser radiation over a larger solid angle range.
• About the diffractive optical element is achievable that the
• a beam-expanding optical element can also generally be present in each case.
• the beam-expanding optical element is about a microlens field, English Micro Lens Array or short MLA.
• the microlens array has a plurality of individual lenses, which are preferably arranged densely.
• the generated laser radiation passes through a region of the light exit surface, preferably from
• a scattering layer also referred to as a diffuser
• Litter layer comprises in particular a roughening, on which the laser radiation is scattered, and / or scattering particles in a matrix material which is permeable to the laser radiation.
• an optically active structure of the diffractive optical element is formed of a material having a high refractive index.
• the refractive index of this material is at least 1.65 or 1.75 or 1.8 or 2.0 or 2.2.
• the values for the refractive index mentioned are preferably valid at an operating temperature of the semiconductor laser and at a wavelength of maximum intensity of the laser radiation generated during operation.
• the refractive index is also preferably above that of epoxides. High-index epoxides reach a value of up to 1.6.
• the optically active structure is a first optically active structure
• Laser radiation works. About the optically active structure, the laser radiation is expanded and distributed, the
• the optically active structure is made, for example, of a 13-15 compound semiconductor material. Also, 12-16 semiconductors such as ZnO, ZnS or ZnTe or Ga 2 0 3 , ln 2 0 3 can be used. Furthermore, instead of
• Semiconductor layers are used.
• about amorphous layers of high index of refraction metal oxides such as ZnO, SnO 2 or Ta 2 Os are useful for the optically active structure.
• materials for the optically active structure are Al 2 O 3, especially as sapphire crystal, GaAs or GaN, especially when the optically active structure in the growth substrate of the laser or the
• deposited layer can also be made Layers of dielectrics such as alumina or silicon nitride, each not necessarily exactly stoichiometrically composed and / or usually amorphous, be practicable.
• dielectrics such as alumina or silicon nitride
• Semiconductor laser at least one surface emitting semiconductor laser chip having a semiconductor layer sequence with at least one active zone for generating
• Laser radiation and a light exit surface which is oriented perpendicular to a growth direction of the semiconductor layer sequence has. Furthermore, the
• Semiconductor laser a diffractive optical element, which is adapted to the expansion and distribution of the laser radiation, so that the semiconductor laser is preferably eye safe.
• Element is made of a material having a refractive index of at least 1.65 or 2.0, based on a wavelength of maximum intensity of the laser radiation.
• the material having a refractive index of at least 1.65 or 2.0 based on a wavelength of maximum intensity of the laser radiation.
• Semiconductor laser at least one surface emitting semiconductor laser chip having a semiconductor layer sequence with at least one active zone for generating
• Laser radiation and a light exit surface which is oriented perpendicular to a growth direction of the semiconductor layer sequence has. Furthermore, the
• An optically effective structure of the beam expanding optical element may be made of a material having a high
• Semiconductor layer sequence at least one Bragg mirror, the of at least one electrical feedthrough
• An electrical contact may be mounted around the light exit surface. This contact is preferably located between the beam-expanding optical element and the associated Bragg mirror, the via for connecting this contact
• Light source is eye safe for the human eye.
• such a diffractive optical element is formed of a material having a relatively low refractive index, the eye protection may be limited depending on the environmental conditions.
• diffractive optical element may be due to then
• Refractive index difference is to ensure eye safety via the beam shaping by the diffractive optical element.
• the diffractive optical element described here via a connection means on the Semiconductor laser chip to attach.
• organic plastics can be used, or inorganic materials having a comparatively low refractive index as Si0 2 as an adhesive. Such materials can penetrate into the optically active structure and the approximately
• lattice-like optically effective structure also fill, because due to the still existing, significant
• the diffractive optical element still works.
• the diffractive optical element is applied via a corresponding joining process either on the wafer level on the not yet isolated semiconductor laser chips or already isolated semiconductor laser chips is assigned together or in groups. Due to the optically effective structure with the high refractive index, such processes are made possible efficiently.
• the semiconductor laser is surface mountable. That is, the semiconductor laser is preferable with lead-free soldering processes or also
• the semiconductor laser can, in particular, be mechanically and / or permeation-free
• a mounting support such as a circuit board
• the diffractive optical element is located on the light exit surface. Between the diffractive optical element and the diffractive optical element and the diffractive optical element
• Light exit surface is preferably only a connecting means, via which the diffractive optical element is connected to the semiconductor laser chip.
• the connecting means is located over the whole area between the light exit surface and the diffractive optical element.
• the connecting means is preferably permeable, in particular transparent to the laser radiation generated.
• the optically active structure of the diffractive optical element is located on a side of the semiconductor laser facing side
• the optically active structure is locally or wholly in direct contact with the bonding agent and / or the optically active structure is partially or completely filled and / or planarized by the bonding agent.
• gap means, for example, that no solid and no liquid are present.
• the gap may be filled or evacuated with one or more gases.
• the connecting means can also
• the diffractive optical element is located directly on the
• the optically active structure can be located on a side of the diffractive optical element facing the light exit surface or also on a side of the diffractive optical element which faces away from the light exit surface.
• the diffractive optical element has a carrier substrate.
• the carrier substrate is, for example, a
• Semiconductor substrate such as gallium nitride or gallium arsenide or a transparent material such as sapphire or
• the carrier substrate is permeable to the laser radiation generated during operation.
• the optical detector According to at least one embodiment, the optical detector
• the carrier substrate about the carrier substrate
• the optical detector According to at least one embodiment, the optical detector
• the optically active structure only partially penetrates the diffractive optical element.
• the carrier substrate and / or the raw material layer remain as a continuous, uninterrupted layer receive.
• the optically active structure then passes only incompletely through the carrier substrate and / or the raw material layer.
• the diffractive optical element is completely penetrated by the optically active structure, so that the optically active structure forms through holes or openings in the diffractive optical element.
• the optically active structure comprises one or more semiconductor materials or consists of one or more semiconductor materials. It is possible that the optically active structure is made of the same or of different semiconductor materials as the semiconductor layer sequence of
• the carrier substrate of the diffractive optical element preferably represents a growth substrate for this semiconductor material of the optically active structure.
• the semiconductor layer sequence is preferably grown epitaxially on the growth substrate and the growth substrate is preferably still present in the finished semiconductor laser.
• the diffractive optical element in the growth substrate of the substrate of the substrate is the diffractive optical element in the growth substrate of the
• diffractive optical element in particular its optically active structure, preferably at one of Semiconductor layer sequence with the active zone side facing away from the growth substrate.
• the diffractive optical element forms the light exit surface of the diffractive optical element
• the diffractive optical element and the semiconductor laser chip are integrally formed. This means, for example, that between the semiconductor laser chip and the diffractive optical
• the semiconductor laser chip and the diffractive optical element have a common component, which is specifically formed by the growth substrate of the
• Connecting means seen in plan view of the light exit surface preferably exclusively adjacent to the
• Connecting means in direct contact with the mounting bracket and / or the diffractive optical element.
• the connecting means can engage in the optically active structure of the diffractive optical element and fill this structure in part.
• the diffractive optical element covers the light exit surface and / or the
• the semiconductor laser chips can be identical to each other and emit radiation of the same wavelength or designed differently from each other.
• the semiconductor laser preferably comprises exactly one
• the semiconductor laser chip includes several laser regions, also called
• the individual lasers can form individual VCSELs, so that the relevant semiconductor laser chip represents a VCSEL array. Such a VCSEL field can provide sufficient or very high optical output power.
• the single lasers are preferably in the form of a matrix in the
• Semiconductor laser chip arranged and can preferably be operated in parallel.
• the single lasers can be electrically parallel be connected to each other and / or be operated only together.
• the individual lasers can be controlled individually or in groups independently of one another electrically. It is possible for a diffractive optical element to jointly cover a plurality of semiconductor laser chips and / or a plurality of individual lasers and to combine them into one component.
• semiconductor laser chips of the semiconductor laser together and preferably completely covered by the diffractive optical element.
• all the light exit surfaces of the semiconductor laser chips can each be completely covered by the diffractive optical element.
• the diffractive optical element preferably extends continuously, integrally and / or completely over all semiconductor laser chips.
• the diffractive optical element is located close to the semiconductor laser chip and / or on the light exit surface.
• a distance between the diffractive optical element and the semiconductor laser chip is at most a 20-bin or 10-bin or 5-bin and / or at least a 1-bin or 2-bin or 4-bin of the maximum-intensity wavelength
• optical element at most 0.5 mm or 0.2 mm or
• the potting material is preferably formed from a plastic having a comparatively low refractive index, such as a silicone or an epoxy or an acrylate or a polycarbonate.
• the potting material is preferably transparent to the generated laser radiation.
• Potting material can touch the optically active structure only at one edge or even over the entire surface area over the entire light exit surface.
• the at least one Bragg mirror is for reflection of
• the Bragg mirror is of at least one electrical feedthrough
• the via is preferred
• the via is electrically isolated from the Bragg mirror through which it passes.
• At least one current constriction is generated in the at least one Bragg mirror or a plurality of the Bragg mirrors.
• the active zone is energized in operation only in one or more current passage areas of the current narrowing.
• the current narrowing is
• each of the Bragg mirrors is penetrated by the or one or more of the vias.
• the contacts are preferably metallic contacts.
• About the contacts is preferably a
• the anode contact and / or the cathode contact extends between the
• anode contact and / or the cathode contact Be surrounded anode contact and / or the cathode contact.
• the anode contact and / or the cathode contact are impermeable and / or metallic for the laser radiation produced.
• the method preferably produces a semiconductor laser as recited in connection with one or more of the above embodiments. Characteristics of the method are therefore also for the
• the method comprises the following steps, preferably in the order indicated: providing the semiconductor laser chip, and
• Semiconductor processes in particular by a passive adjustment on the wafer level, can also be done a cost reduction in the production. For example, it is possible to base production of a component of the semiconductor laser already on the wafer level on customer-specific emission characteristics, for example by way of a collimated emission for easier customer-side further processing
• layers or materials with a high refractive index can usually be efficiently structured using the processes available in semiconductor production.
• diffractive optical elements can already be combined at the wafer level with the semiconductor laser chips. This allows economical, diffractive optical elements and Precise adjustment of semiconductor laser chips to each other, if needed. It is specially a
• a testing of the semiconductor laser can already take place at the wafer level, and the effect of the diffractive optical elements can already be analyzed and checked at the wafer level.
• the diffractive optical element described here which is intimately connected to the semiconductor laser chip, there is no need to subsequently cover the semiconductor laser chips with a separate diffractive optical element.
• the diffractive optical element in the semiconductor laser described here can serve as a protective layer for the semiconductor laser chip. If the diffractive optical element, for example, adhered to the semiconductor laser chip, so can
• Carrier substrate of the diffractive optical element already ensure sufficient mechanical protection for the semiconductor laser. Due to the high refractive index of the optically active structure, it is also possible that the optically active structure at a the
• Semiconductor laser chip opposite side of the diffractive optical element is located and that the diffractive optical element is coated with a housing plastic, in order to achieve additional protection.
• FIGs 1 to 4, 15 and 16 are schematic sectional views of process steps of embodiments of methods described herein, Figures 5 to 13, 14B and 17 schematically
• Figure 14A is a schematic plan view of a
• Figure 1 is an embodiment of a
• a carrier substrate 32 for a diffractive optical element 3 is provided.
• the carrier substrate 32 is, for example, a sapphire substrate.
• a release layer 34 is generated, grown approximately epitaxially.
• the release layer 34 is
• a GaN layer for example, a GaN layer.
• a raw material layer 35 deposited, for example epitaxially or by sputtering.
• Raw material layer 35 is made of aluminum nitride, for example.
• optically active structure 33rd educated.
• the optically active structure 33 is produced approximately via lithography and etching.
• the optically active structure 33 symbolized by hatching in FIG. 1, has a lattice-like shape when seen in plan view. Structure sizes of the optically active structure 33 are seen in plan view, for example in the range of one
• the optically effective structure 33 penetrates the raw material layer 35 only partially.
• the optically active structure 33 is illustrated only greatly simplified.
• IC Refractive index difference
• Semiconductor laser chip 4 is a
• the semiconductor laser chip 4 has a growth substrate 2 for a
• the semiconductor layer sequence 40 has a growth direction G in the direction away from the growth substrate 2. Furthermore, the
• Semiconductor layer sequence 40 at least one active zone 41 for Generating the laser radiation L.
• a light exit surface 44 of the semiconductor laser 4 is formed by the semiconductor layer sequence 40 and is perpendicular to the growth direction G.
• the growth substrate 2 is, for example, a GaAs substrate.
• the semiconductor layer sequence 40 is based in particular on the AlInGaAs material system. Notwithstanding the illustration in FIG. 1, it is possible for a replacement substrate to be used instead of the growth substrate 2, on which the semiconductor layer sequence 40 is applied after being grown. In this case, the growth substrate 2 is removed. In the process step of FIG. 1D, the component from FIG. 1B is applied to the semiconductor laser chip 4 from FIG. 1D.
• permeable connecting means 5 extends over the entire surface and continuously between the semiconductor laser chip 4 and the component of Figure IB.
• the connecting means 5 is
• the connecting means 5 fills the optically active structure 33 of the high refractive index material. Due to the high refractive index of the optically active structure 33, a sufficiently large refractive index difference remains
• Carrier substrate 32 therethrough.
• the Carrier substrate 32 through a laser radiation irradiated, which decomposes the separation layer 34, so that the carrier substrate 32 can be lifted.
• a laser radiation irradiated which decomposes the separation layer 34, so that the carrier substrate 32 can be lifted.
• Laserabhebe compiler can also be carried out an etching and / or grinding and / or polishing.
• any residues of the separating layer 34 on the optically active structure 33 are removed.
• the excess raw material layer 35 is optionally also completely removed.
• the release layer 34 ultimately serves to support the substrate 32 by means of a lift-off as a
• the separating layer 34 can be a semiconductor layer as explained, but this is not absolutely necessary. To detach is only
• release layer 34 partially or completely by a method such as laser decomposition or etching
• the separation layer 34 can thus also a dielectric and / or an organic material such as
• Structure 33 which forms the diffractive optical element 3, are removed in places.
• electrical contacts 91, 92 illustrated in highly simplified form in FIG. 1F, can be applied in order to energize the active zone 41.
• the diffractive optical element 3 can already be arranged before the method step of FIG. 1D, for example at the step of FIG. 1B, which is shown in FIG. 1F have shown recess for the electrical contacts 91, 92. The same applies to all others
• the raw material layer 35 is made of, for example, deposited amorphous alumina.
• the optically effective structure 33 is formed in the raw material layer 35.
• the optically active structure 33 does not extend to the light exit surface 44.
• the optically active structure 33 may also extend as far as the semiconductor layer sequence 40.
• FIG. 2D it is shown that the semiconductor layer sequence 40 is exposed in places in order to generate an electrical layer
• optically active structure 33 is provided on the support substrate 32.
• the optically active structure 33 can consist of two partial structures 33a, 33b
• FIG. 3B shows that the two components from FIG. 3A are attached to one another via the connection means 5 and that a part of the semiconductor layer sequence 40 is exposed for electrical contacting.
• the diffractive optical element 3 still has the remaining raw material layer 35, the release layer 34, which is optional, and the support substrate 32.
• the laser radiation L is through the layer with the
• the carrier substrate 32 is preferably sapphire or silicon carbide. In all other exemplary embodiments, it is also possible in principle for the carrier substrate 32 to still be present in the finished semiconductor laser 1.
• the raw material layer 35 is produced directly on the carrier substrate 32.
• the carrier substrate 32 is, for example, GaAs
• the raw material layer 35 is made of AIP, for example.
• the optically active structure 33 is produced in the raw material layer 35.
• planarization layer 37 is used for planarizing the optically active structure 33
• the planarization layer 37, 5a is required for subsequent connection to the semiconductor laser chip 4 provided in FIG. 4D.
• Semiconductor laser chip 4 are about S1O 2 and become For example, chemomechanically polished before preferably wringing takes place, see Figure 4E. This forms the
• Layers 5a, 5b together form the connecting medium layer 5.
• the carrier substrate 32 becomes
• an AIP layer is patterned directly on the GaAs substrate, subsequently planarized and, via a process such as direct bonding, with the
• Embodiments such as flowable oxides, English flowable oxides or short FOX can be used. It is also possible to use organic materials such as crosslinked dibenzocyclobuthene layers.
• FIGS. 1 to 4 the application of only one diffractive optical element 3 to only one
• FIGS. 1 to 4 can thus be carried out both in a wafer-to-wafer process and in a chip-to-wafer process or in a chip-to-chip process. In this case, a wafer-to-wafer process is preferred for reasons of efficiency.
• Adhesive is used to connect the two components of Figures 4C and 4D together.
• the layer with the connecting means 5 is preferably realized by a single layer. Gluing or wringing or direct bonding can also be done in all others
• Embodiments are used as alternative methods of connecting the two components together.
• the raw material layer 35 on the carrier substrate 32 is attached first to the semiconductor laser chip 4, see FIG. 4G, and for the optically active structure 33 to be produced only after detachment of the carrier substrate 32, see FIG. 4H. Since the generation of the optically active structure 33 takes place only on the semiconductor chip 4, only a comparatively rough pre-adjustment of the component from FIG. 4G relative to the semiconductor laser 4 is necessary.
• the diffractive optical element 3 extends in one piece and together over the semiconductor laser chips 4.
• the diffractive optical element 3 is located on a side of the growth substrate 2 facing away from the semiconductor layer sequence 40. Laterally beside the
• Semiconductor layer sequence 40 with the active zone 41 are the electrical contacts 91, 92.
• planarization layer 37 is present on one side of the diffractive optical element 3 remote from the semiconductor layer sequence 40, as is also possible in all other exemplary embodiments in which the optically active structure 33 is located on an outer side.
• the optically active structure 33 is formed directly in the growth substrate 2.
• the electrical contacts 91, 92 are designed so that they are partially within the
• lower refractive index Si: H layers may be produced, for example, at about 633 nm, about 1.85.
• the optically active structure 33 of FIG. 6 is in particular made of SiN: H or else of sapphire.
• the growth substrate 2 and the diffractive optical element 3 are monolithically integrated, rather than using separate diffractive optical elements, such as illustrated in connection with Figures 1, 3, 4 or 5.
• FIG. 8 illustrates that the electrical
• FIG. 9 shows that the diffractive optical element 3 on the side with the semiconductor layer sequence 40
• one of the electrical contacts 92 is applied flat.
• a potting material 7 is additionally present.
• the diffractive optical element 3 is primarily fastened via the connecting means 5, for example an adhesive or a flowable oxide.
• the potting material 7 extends in places to a semiconductor laser chip 4 side facing the connecting means 5, for example an adhesive or a flowable oxide.
• diffractive optical element 3 and is in places in direct contact with the optically active structure 33.
• the diffractive optical element 3 via the potting material 7, which also represents the connecting means 5, attached.
• the semiconductor laser 1 can be protected against external influences. Due to the high refractive index of the optically active structure 33, it is harmless if the potting material 7 covers and / or fills the optically active structure 33. In FIGS. 10A and 10B, the optically effective
• connecting means 5 is applied in the form of a frame on the light exit surface 44, wherein an area directly above the for generating the
• connection means 5 is a metal layer, so that the diffractive optical element 3 is joined to the semiconductor laser chip 4 by soldering, for example eutectic, quasi-eutectic or isothermal solidification.
• the connecting means 5 may consist of several
• Partial layers are composed.
• Structure 33 limited to an area above the active zone 41.
• the connecting means 5 is spaced from the optical active structure 33.
• a gap 6 is located between the diffractive optical element 3 and the semiconductor laser chip 4, a gap 6.
• the gap 6 is comparatively thin and filled, for example, with air.
• a comparatively precise adjustment takes place in order to achieve exact matching of the diffractive optical element 3 on the connecting means 5, which is designed in particular as a metal frame to achieve.
• FIG. 12 shows that the connection means 5 is spaced from the semiconductor layer sequence 40.
• Connecting means 5 for example metal pedestals, are in direct contact with the growth substrate 2 and with the diffractive optical element 3.
• the connection means 5 is mounted on a mounting bracket 8 and is not in direct contact with the semiconductor laser chip 4.
• diffractive optical element 3 covers the
• a plurality of the semiconductor laser chips 4 are mounted on the mounting carrier 8.
• the semiconductor laser chips 4 are jointly covered by the one-piece, contiguous diffractive optical element 3.
• the diffractive optical element 3 can project laterally beyond the semiconductor laser chips 4.
• the diffractive optical element 3 itself a support for the semiconductor laser chips 4.
• the semiconductor laser 1 has a plurality of the
• semiconductor laser chips 4 on as in all other Embodiments may be the case. It is equally possible in the exemplary embodiments that only one or even a plurality of semiconductor laser chips 4 are present, which may have a plurality of laser regions or individual lasers 47, for example a field of surface-emitting
• VCSEL array Vertical resonator lasers, also referred to as VCSEL array, see the top view in Figure 14A and the sectional view in Figure 14B.
• the single laser 47 which in plan view
• Semiconductor laser 1 as a flip-chip on a transparent substrate
• Carrier substrate 32 such as glass, BF33 or sapphire,
• the semiconductor layer sequence 40 becomes epitaxial
• the semiconductor layer sequence 40 comprises, from the growth substrate 2, a first Bragg mirror 46a, the region with the active zone 41 and a second Bragg mirror 46b. Both Bragg mirrors 46a, 46b are preferably electrically conductive and comprise alternating high and low refractive index layers.
• FIG. 15B shows that a bonding layer 93 and the anode contact 91 are produced on the second Bragg mirror 46b.
• the bonding layer 93 is, for example, S1O2, and the anode contact 91 is preferably one or more
• the anode contact 91 and the bonding layer 93 preferably terminate flush with one another.
• the transparent carrier substrate 32 is applied to the bonding layer 93 by wafer bonding
• the optically active structure 33 can already be located on the carrier substrate 32, or the optically active structure 33 is attached to the carrier substrate 32 only later.
• Wafer bonding for example, is direct bonding with S1O2 to S1O2.
• the optically active structure 33 can, in particular after the removal of the growth substrate 2 and after the
• Waferbonden be applied lithographically, which can achieve a high accuracy.
• the planarization layer 37 is applied to the optically active structure 33, so that the optically active structure 33
• the first Bragg mirror 46a is partially removed so that the area of the semiconductor layer sequence 40 with the active zone 41 is exposed. Furthermore, a current narrowing 48 is preferably generated, for example by means of oxidation. Thus, the active zone 41 is only in the range of
• the filling material 94 is electric insulating and for example a spin on-glass or a
• organic material such as benzocyclobutene, BCB for short.
• the region of the anode contact 91 is electrically connected to the bonding layer 93.
• the first Bragg mirror 46a is electrically connected via a
• This contacting of the first Bragg mirror 46a is preferably reflective for the laser radiation generated during operation.
• the first Bragg mirror 46a together with this contacting is a metal Bragg hybrid mirror.
• the first Bragg mirror 46a may have fewer pairs of layers, for example at most 12 pairs of layers or at most 6 pairs of layers.
• connection surfaces for the two contacts 91, 92 are produced.
• the pads can cover the filler 94 over a large area.
• Pads lie in a common plane, so that the semiconductor laser 1, an SMT component and thus
• FIG. 16A is surface-contactable.
• the method step of FIG. 16A is analogous to FIG.
• the second Bragg mirror 46b is structured in FIG. 16B, so that the region of the
• Semiconductor layer sequence 40 is exposed with the active zone 41 from a side facing away from the growth substrate 2 side.
• the current narrowing 48 is created in the second Bragg mirror 46b.
• the filling material 94 is flat
• the growth substrate 2 is removed, see Figure 16D.
• the plated-through hole 95 is led through the first Bragg mirror 46a and through the filling material 94 to the anode contact 91 on the bonding layer 93.
• a further filling material 94 for the electrical insulation of the via 95 can be used by the first Bragg mirror 46a.
• the pads for the contacts 91, 92 are generated. This is preferably done in the same way as explained above in connection with FIG. 15E.
• FIGS. 15 and 16 thus differ in particular in the position of the current narrowing 48. Consequently, either only the first or only the second Bragg mirror 46a, 46b is penetrated by the through-connection 95.
• the plated-through hole 95 is guided through both Bragg mirrors 46a, 46b.
• one of the current constrictions 48 is preferably present in both Bragg mirrors 46a, 46b.
• a structuring of both Bragg mirrors 46a, 46b takes place. Only the region of the semiconductor layer sequence 40 with the active zone 41 remains, except for the area with the via 95, over the whole area.
• Embodiment of Figure 17 is a combination of
• anode contact 91 and the cathode contact 92 may be interchanged with respect to electrical polarity.
• the composite of the VCSEL chip 4 and the optics 3 for further processing for example with a

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