TWI687006B - 半導體雷射及此種半導體雷射之製造方法 - Google Patents

半導體雷射及此種半導體雷射之製造方法 Download PDF

Info

Publication number
TWI687006B
TWI687006B TW107101877A TW107101877A TWI687006B TW I687006 B TWI687006 B TW I687006B TW 107101877 A TW107101877 A TW 107101877A TW 107101877 A TW107101877 A TW 107101877A TW I687006 B TWI687006 B TW I687006B
Authority
TW
Taiwan
Prior art keywords
semiconductor laser
optical element
diffractive optical
semiconductor
wafer
Prior art date
Application number
TW107101877A
Other languages
English (en)
Chinese (zh)
Other versions
TW201832434A (zh
Inventor
羅蘭亨利 安茲曼
休伯特 哈布里特
安德烈斯 布羅塞
馬丁魯道夫 貝靈格
Original Assignee
德商歐斯朗奧托半導體股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 德商歐斯朗奧托半導體股份有限公司 filed Critical 德商歐斯朗奧托半導體股份有限公司
Publication of TW201832434A publication Critical patent/TW201832434A/zh
Application granted granted Critical
Publication of TWI687006B publication Critical patent/TWI687006B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
TW107101877A 2017-01-19 2018-01-18 半導體雷射及此種半導體雷射之製造方法 TWI687006B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
??102017100997.3 2017-01-19
DE102017100997.3 2017-01-19
DE102017100997.3A DE102017100997A1 (de) 2017-01-19 2017-01-19 Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers

Publications (2)

Publication Number Publication Date
TW201832434A TW201832434A (zh) 2018-09-01
TWI687006B true TWI687006B (zh) 2020-03-01

Family

ID=61017905

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107101877A TWI687006B (zh) 2017-01-19 2018-01-18 半導體雷射及此種半導體雷射之製造方法

Country Status (6)

Country Link
US (1) US10797469B2 (enExample)
JP (2) JP6970748B2 (enExample)
CN (2) CN113872048B (enExample)
DE (2) DE102017100997A1 (enExample)
TW (1) TWI687006B (enExample)
WO (1) WO2018134086A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023151848A1 (de) * 2022-02-11 2023-08-17 Ams-Osram International Gmbh Laserbauelement

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10971890B2 (en) * 2016-12-05 2021-04-06 Goertek, Inc. Micro laser diode transfer method and manufacturing method
US10535799B2 (en) 2017-05-09 2020-01-14 Epistar Corporation Semiconductor device
DE102017112235A1 (de) 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Laserdiode und Verfahren zum Herstellen einer Laserdiode
WO2019056320A1 (zh) 2017-09-22 2019-03-28 Oppo广东移动通信有限公司 电源提供电路、电源提供设备以及控制方法
DE102017122325A1 (de) 2017-09-26 2019-03-28 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung von strahlungsemittierenden Halbleiterbauelementen
US20210343902A1 (en) * 2018-09-27 2021-11-04 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component having a sapphire support and method for the production thereof
DE102019100794A1 (de) * 2018-12-20 2020-06-25 Osram Opto Semiconductors Gmbh Laservorrichtung und verfahren zur herstellung einer laservorrichtung
DE102019104986A1 (de) * 2019-02-27 2020-08-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
US11025033B2 (en) * 2019-05-21 2021-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Bump bonding structure to mitigate space contamination for III-V dies and CMOS dies
DE102020118159A1 (de) 2020-07-09 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laservorrichtung
US20220109287A1 (en) * 2020-10-01 2022-04-07 Vixar, Inc. Metalens Array and Vertical Cavity Surface Emitting Laser Systems and Methods
JP2022082100A (ja) * 2020-11-20 2022-06-01 国立大学法人東京工業大学 光偏向デバイス
FR3146242B1 (fr) * 2023-02-27 2025-02-14 Soitec Silicon On Insulator Structure semi-conductrice pour former des diodes laser a cavite verticale
TWI878998B (zh) 2023-07-31 2025-04-01 台亞半導體股份有限公司 電致發光元件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200532761A (en) * 2004-02-27 2005-10-01 Heptagon Oy Micro-optics on optoelectronics
CN105874662A (zh) * 2013-04-22 2016-08-17 三流明公司 用于高频率操作的光电器件的多光束阵列的微透镜

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0827407B2 (ja) * 1993-06-02 1996-03-21 日本電気株式会社 微細グレーティング形成方法
JP3243772B2 (ja) * 1993-12-21 2002-01-07 日本電信電話株式会社 面発光半導体レーザ
JP2000070707A (ja) * 1998-09-01 2000-03-07 Sony Corp 光触媒装置
US7265439B1 (en) 1999-11-30 2007-09-04 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Low cost, high speed, high efficiency infrared transceiver
KR100657252B1 (ko) * 2000-01-20 2006-12-14 삼성전자주식회사 근접장 기록재생용 광헤드 및 그 제조방법
US6888871B1 (en) 2000-07-12 2005-05-03 Princeton Optronics, Inc. VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system
JP2002026452A (ja) * 2000-07-12 2002-01-25 Toyota Central Res & Dev Lab Inc 面発光型光源及びその製造方法、レーザ加工機用光源
EP1281222B1 (de) 2001-02-20 2004-04-21 Osram Opto Semiconductors GmbH Optisch gepumpte oberflächenemittierende halbleiterlaservorrichtung und verfahren zu deren herstellung
JP2002368334A (ja) * 2001-03-26 2002-12-20 Seiko Epson Corp 面発光レーザ、フォトダイオード、それらの製造方法及びそれらを用いた光電気混載回路
US6775308B2 (en) 2001-06-29 2004-08-10 Xanoptix, Inc. Multi-wavelength semiconductor laser arrays and applications thereof
AU2003211414A1 (en) * 2002-03-08 2003-09-22 Sharp Kabushiki Kaisha Light source apparatus and optical communication module comprising it
JP2004279634A (ja) * 2003-03-14 2004-10-07 Nikon Corp 光学部品とその製造方法及び露光装置
JP4092570B2 (ja) 2003-07-23 2008-05-28 セイコーエプソン株式会社 光素子およびその製造方法、光モジュール、ならびに光モジュールの駆動方法
US6947224B2 (en) 2003-09-19 2005-09-20 Agilent Technologies, Inc. Methods to make diffractive optical elements
US20050067681A1 (en) 2003-09-26 2005-03-31 Tessera, Inc. Package having integral lens and wafer-scale fabrication method therefor
US7289547B2 (en) * 2003-10-29 2007-10-30 Cubic Wafer, Inc. Laser and detector device
US20080232418A1 (en) 2004-01-23 2008-09-25 Nec Corporation Surface Emitting Laser
US7223619B2 (en) 2004-03-05 2007-05-29 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. VCSEL with integrated lens
CN100474716C (zh) 2004-05-28 2009-04-01 奥斯兰姆奥普托半导体有限责任公司 具有垂直发射方向的表面发射的半导体激光器部件
JP2006066538A (ja) 2004-08-25 2006-03-09 Hamamatsu Photonics Kk 面発光レーザ光源の製造方法及び面発光レーザ光源
JP5017804B2 (ja) 2005-06-15 2012-09-05 富士ゼロックス株式会社 トンネル接合型面発光半導体レーザ装置およびその製造方法
US7295375B2 (en) * 2005-08-02 2007-11-13 International Business Machines Corporation Injection molded microlenses for optical interconnects
JP2007049017A (ja) * 2005-08-11 2007-02-22 Ricoh Co Ltd 光電気変換モジュール
TWI258198B (en) 2005-09-19 2006-07-11 Chunghwa Telecom Co Ltd A method applying a transparent electrode having microlens form in VCSEL
JP2007214669A (ja) * 2006-02-07 2007-08-23 Rohm Co Ltd 光通信システム
CN101688977B (zh) * 2007-06-04 2011-12-07 诺基亚公司 衍射扩束器和基于衍射扩束器的虚拟显示器
JP4970217B2 (ja) * 2007-11-07 2012-07-04 株式会社東芝 物質の測定方法
DE102008012859B4 (de) * 2007-12-21 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Filterstruktur
WO2009143462A2 (en) * 2008-05-22 2009-11-26 Vi Systems Gmbh Method for attaching optical components onto silicon-based integrated circuits
DE102008048903B4 (de) * 2008-09-25 2021-06-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauteil
JP2010147315A (ja) * 2008-12-19 2010-07-01 Fuji Xerox Co Ltd 光半導体装置、光伝送装置及び面発光素子
JP2010212664A (ja) * 2009-02-10 2010-09-24 Renesas Electronics Corp 半導体レーザとその製造方法
US10244181B2 (en) * 2009-02-17 2019-03-26 Trilumina Corp. Compact multi-zone infrared laser illuminator
US9232592B2 (en) * 2012-04-20 2016-01-05 Trilumina Corp. Addressable illuminator with eye-safety circuitry
DE102009056387B9 (de) 2009-10-30 2020-05-07 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit einem Phasenstrukturbereich zur Selektion lateraler Lasermoden
US8582618B2 (en) 2011-01-18 2013-11-12 Avago Technologies General Ip (Singapore) Pte. Ltd. Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive or refractive lens on the semiconductor laser device
CN102709808A (zh) * 2012-05-29 2012-10-03 中国科学院长春光学精密机械与物理研究所 微透镜集成垂直腔面发射激光器的相干控制阵列结构
JP2014096419A (ja) * 2012-11-07 2014-05-22 Stanley Electric Co Ltd 光電子デバイス
DE102013104270A1 (de) * 2013-04-26 2014-10-30 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
US20150311673A1 (en) * 2014-04-29 2015-10-29 Princeton Optronics Inc. Polarization Control in High Peak Power, High Brightness VCSEL
TWM503009U (zh) 2014-11-14 2015-06-11 Ahead Optoelectronics Inc 半導體雷射－繞射光學元件模組
JP6331997B2 (ja) 2014-11-28 2018-05-30 三菱電機株式会社 半導体光素子
JP6487195B2 (ja) * 2014-12-09 2019-03-20 日本オクラロ株式会社 半導体光集積素子、半導体光集積素子の製造方法及び光モジュール
EP3130950A1 (de) * 2015-08-10 2017-02-15 Multiphoton Optics Gmbh Strahlumlenkelement sowie optisches bauelement mit strahlumlenkelement
DE102016116747A1 (de) 2016-09-07 2018-03-08 Osram Opto Semiconductors Gmbh Diffraktives optisches element und verfahren zu seiner herstellung

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200532761A (en) * 2004-02-27 2005-10-01 Heptagon Oy Micro-optics on optoelectronics
CN105874662A (zh) * 2013-04-22 2016-08-17 三流明公司 用于高频率操作的光电器件的多光束阵列的微透镜

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023151848A1 (de) * 2022-02-11 2023-08-17 Ams-Osram International Gmbh Laserbauelement

Also Published As

Publication number Publication date
CN110192312B (zh) 2021-09-24
JP2019536287A (ja) 2019-12-12
DE112018000431A5 (de) 2019-09-26
WO2018134086A1 (de) 2018-07-26
US10797469B2 (en) 2020-10-06
CN113872048A (zh) 2021-12-31
JP6970748B2 (ja) 2021-11-24
CN110192312A (zh) 2019-08-30
TW201832434A (zh) 2018-09-01
CN113872048B (zh) 2024-07-02
DE102017100997A1 (de) 2018-07-19
US20190245326A1 (en) 2019-08-08
JP7232883B2 (ja) 2023-03-03
JP2022009737A (ja) 2022-01-14
DE112018000431B4 (de) 2022-03-17

Similar Documents

Publication Publication Date Title
TWI687006B (zh) 半導體雷射及此種半導體雷射之製造方法
JP5550550B2 (ja) 複数のオプトエレクトロニクスコンポーネントを製造する方法およびオプトエレクトロニクスコンポーネント
JP6099752B2 (ja) オプトエレクトロニクスコンポーネントの製造方法、およびオプトエレクトロニクスコンポーネント
TWI413273B (zh) 封裝積體薄膜發光二極體
US9029893B2 (en) Semiconductor light emitting device and method for manufacturing the same
JP6305337B2 (ja) 半導体構造の処理方法
JP2019530234A (ja) シリコン制御バックプレーン上に一体化された垂直エミッタ
US8933476B2 (en) Semiconductor light emitting device and method for manufacturing the same
US11923654B2 (en) Laser integration techniques
US20030031435A1 (en) Optoelectronic IC module
US20050190810A1 (en) Contact-bonded optically pumped semiconductor laser structure
US20030031218A1 (en) VCSEL structure and method of making same
US20180301873A1 (en) Semiconductor laser and method for producing a semiconductor laser
KR20120015337A (ko) Ｌｅｄ에서 사용하기 위한 재방출 반도체 캐리어 디바이스 및 제조 방법
US20220190217A1 (en) Radiation-emitting semiconductor component and method for producing radiation-emitting semiconductor component
EP2383801A1 (en) Semiconductor light-emitting element and method for manufacturing semiconductor light-emitting element
JP2013507011A (ja) 変換素子を介したオプトエレクトロニクス半導体コンポーネントの接続方法およびオプトエレクトロニクス半導体コンポーネント
JP7627364B2 (ja) 光電子半導体チップ及び構成要素
JP6231101B2 (ja) 半導体レーザ素子を製造する方法および半導体レーザ素子
TW200937783A (en) Method for the production of semiconductor chips and semiconductor chip
CN111433922B (zh) 包括转换器约束的led封装
US20170345981A1 (en) Light-emitting device