JP6970748B2 - 半導体レーザおよびそのような半導体レーザの製造方法 - Google Patents

半導体レーザおよびそのような半導体レーザの製造方法 Download PDF

Info

Publication number
JP6970748B2
JP6970748B2 JP2019527306A JP2019527306A JP6970748B2 JP 6970748 B2 JP6970748 B2 JP 6970748B2 JP 2019527306 A JP2019527306 A JP 2019527306A JP 2019527306 A JP2019527306 A JP 2019527306A JP 6970748 B2 JP6970748 B2 JP 6970748B2
Authority
JP
Japan
Prior art keywords
semiconductor laser
optical element
diffractive optical
semiconductor
coupling means
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019527306A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019536287A (ja
JP2019536287A5 (enExample
Inventor
フーベルト ハルブリッター
アンドレアス プルーセル
ローラント ハインリヒ エンツマン
マルチン ルドルフ ベリンガー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2019536287A publication Critical patent/JP2019536287A/ja
Publication of JP2019536287A5 publication Critical patent/JP2019536287A5/ja
Priority to JP2021177494A priority Critical patent/JP7232883B2/ja
Application granted granted Critical
Publication of JP6970748B2 publication Critical patent/JP6970748B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2019527306A 2017-01-19 2018-01-09 半導体レーザおよびそのような半導体レーザの製造方法 Active JP6970748B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2021177494A JP7232883B2 (ja) 2017-01-19 2021-10-29 半導体レーザおよびそのような半導体レーザの製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102017100997.3A DE102017100997A1 (de) 2017-01-19 2017-01-19 Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers
DE102017100997.3 2017-01-19
PCT/EP2018/050459 WO2018134086A1 (de) 2017-01-19 2018-01-09 Halbleiterlaser und verfahren zur herstellung eines solchen halbleiterlasers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021177494A Division JP7232883B2 (ja) 2017-01-19 2021-10-29 半導体レーザおよびそのような半導体レーザの製造方法

Publications (3)

Publication Number Publication Date
JP2019536287A JP2019536287A (ja) 2019-12-12
JP2019536287A5 JP2019536287A5 (enExample) 2020-01-30
JP6970748B2 true JP6970748B2 (ja) 2021-11-24

Family

ID=61017905

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2019527306A Active JP6970748B2 (ja) 2017-01-19 2018-01-09 半導体レーザおよびそのような半導体レーザの製造方法
JP2021177494A Active JP7232883B2 (ja) 2017-01-19 2021-10-29 半導体レーザおよびそのような半導体レーザの製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2021177494A Active JP7232883B2 (ja) 2017-01-19 2021-10-29 半導体レーザおよびそのような半導体レーザの製造方法

Country Status (6)

Country Link
US (1) US10797469B2 (enExample)
JP (2) JP6970748B2 (enExample)
CN (2) CN110192312B (enExample)
DE (2) DE102017100997A1 (enExample)
TW (1) TWI687006B (enExample)
WO (1) WO2018134086A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109906518B (zh) * 2016-12-05 2022-07-01 歌尔股份有限公司 微激光二极管转移方法和微激光二极管显示装置制造方法
US10535799B2 (en) 2017-05-09 2020-01-14 Epistar Corporation Semiconductor device
DE102017112235A1 (de) 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Laserdiode und Verfahren zum Herstellen einer Laserdiode
EP3657660B1 (en) 2017-09-22 2021-07-07 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Power supply circuit, power supply device, and control method
DE102017122325A1 (de) 2017-09-26 2019-03-28 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung von strahlungsemittierenden Halbleiterbauelementen
DE102018123931A1 (de) * 2018-09-27 2020-04-02 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement mit Saphirträger und Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements
DE102019100794A1 (de) 2018-12-20 2020-06-25 Osram Opto Semiconductors Gmbh Laservorrichtung und verfahren zur herstellung einer laservorrichtung
DE102019104986A1 (de) * 2019-02-27 2020-08-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
US11025033B2 (en) * 2019-05-21 2021-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Bump bonding structure to mitigate space contamination for III-V dies and CMOS dies
DE102020118159A1 (de) 2020-07-09 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laservorrichtung
US20220109287A1 (en) * 2020-10-01 2022-04-07 Vixar, Inc. Metalens Array and Vertical Cavity Surface Emitting Laser Systems and Methods
JP2022082100A (ja) * 2020-11-20 2022-06-01 国立大学法人東京工業大学 光偏向デバイス
DE102022103260A1 (de) * 2022-02-11 2023-08-17 Ams-Osram International Gmbh Laserbauelement
FR3146242B1 (fr) * 2023-02-27 2025-02-14 Soitec Silicon On Insulator Structure semi-conductrice pour former des diodes laser a cavite verticale
TWI878998B (zh) 2023-07-31 2025-04-01 台亞半導體股份有限公司 電致發光元件

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0827407B2 (ja) * 1993-06-02 1996-03-21 日本電気株式会社 微細グレーティング形成方法
JP3243772B2 (ja) * 1993-12-21 2002-01-07 日本電信電話株式会社 面発光半導体レーザ
JP2000070707A (ja) * 1998-09-01 2000-03-07 Sony Corp 光触媒装置
US7265439B1 (en) * 1999-11-30 2007-09-04 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Low cost, high speed, high efficiency infrared transceiver
KR100657252B1 (ko) 2000-01-20 2006-12-14 삼성전자주식회사 근접장 기록재생용 광헤드 및 그 제조방법
JP2002026452A (ja) 2000-07-12 2002-01-25 Toyota Central Res & Dev Lab Inc 面発光型光源及びその製造方法、レーザ加工機用光源
US6888871B1 (en) * 2000-07-12 2005-05-03 Princeton Optronics, Inc. VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system
EP1281222B1 (de) * 2001-02-20 2004-04-21 Osram Opto Semiconductors GmbH Optisch gepumpte oberflächenemittierende halbleiterlaservorrichtung und verfahren zu deren herstellung
JP2002368334A (ja) 2001-03-26 2002-12-20 Seiko Epson Corp 面発光レーザ、フォトダイオード、それらの製造方法及びそれらを用いた光電気混載回路
US6775308B2 (en) * 2001-06-29 2004-08-10 Xanoptix, Inc. Multi-wavelength semiconductor laser arrays and applications thereof
CN100583578C (zh) 2002-03-08 2010-01-20 夏普株式会社 光源装置及使用该光源装置的光通信模块
JP2004279634A (ja) 2003-03-14 2004-10-07 Nikon Corp 光学部品とその製造方法及び露光装置
JP4092570B2 (ja) 2003-07-23 2008-05-28 セイコーエプソン株式会社 光素子およびその製造方法、光モジュール、ならびに光モジュールの駆動方法
US6947224B2 (en) 2003-09-19 2005-09-20 Agilent Technologies, Inc. Methods to make diffractive optical elements
US20050067681A1 (en) 2003-09-26 2005-03-31 Tessera, Inc. Package having integral lens and wafer-scale fabrication method therefor
US7289547B2 (en) * 2003-10-29 2007-10-30 Cubic Wafer, Inc. Laser and detector device
JP4760380B2 (ja) 2004-01-23 2011-08-31 日本電気株式会社 面発光レーザ
EP1569276A1 (en) 2004-02-27 2005-08-31 Heptagon OY Micro-optics on optoelectronics
US7223619B2 (en) * 2004-03-05 2007-05-29 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. VCSEL with integrated lens
CN100474716C (zh) * 2004-05-28 2009-04-01 奥斯兰姆奥普托半导体有限责任公司 具有垂直发射方向的表面发射的半导体激光器部件
JP2006066538A (ja) * 2004-08-25 2006-03-09 Hamamatsu Photonics Kk 面発光レーザ光源の製造方法及び面発光レーザ光源
JP5017804B2 (ja) 2005-06-15 2012-09-05 富士ゼロックス株式会社 トンネル接合型面発光半導体レーザ装置およびその製造方法
US7295375B2 (en) * 2005-08-02 2007-11-13 International Business Machines Corporation Injection molded microlenses for optical interconnects
JP2007049017A (ja) * 2005-08-11 2007-02-22 Ricoh Co Ltd 光電気変換モジュール
TWI258198B (en) * 2005-09-19 2006-07-11 Chunghwa Telecom Co Ltd A method applying a transparent electrode having microlens form in VCSEL
JP2007214669A (ja) 2006-02-07 2007-08-23 Rohm Co Ltd 光通信システム
US8320032B2 (en) 2007-06-04 2012-11-27 Nokia Corporation Diffractive beam expander and a virtual display based on a diffractive beam expander
JP4970217B2 (ja) 2007-11-07 2012-07-04 株式会社東芝 物質の測定方法
DE102008012859B4 (de) * 2007-12-21 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Filterstruktur
RU2010152355A (ru) 2008-05-22 2012-06-27 Коннектор Оптикс (Ru) Способ для прикрепления оптических компонентов на интегральные схемы на основе кремния
DE102008048903B4 (de) * 2008-09-25 2021-06-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauteil
JP2010147315A (ja) 2008-12-19 2010-07-01 Fuji Xerox Co Ltd 光半導体装置、光伝送装置及び面発光素子
JP2010212664A (ja) * 2009-02-10 2010-09-24 Renesas Electronics Corp 半導体レーザとその製造方法
US10244181B2 (en) * 2009-02-17 2019-03-26 Trilumina Corp. Compact multi-zone infrared laser illuminator
US9232592B2 (en) * 2012-04-20 2016-01-05 Trilumina Corp. Addressable illuminator with eye-safety circuitry
DE102009056387B9 (de) * 2009-10-30 2020-05-07 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit einem Phasenstrukturbereich zur Selektion lateraler Lasermoden
US8582618B2 (en) 2011-01-18 2013-11-12 Avago Technologies General Ip (Singapore) Pte. Ltd. Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive or refractive lens on the semiconductor laser device
CN102709808A (zh) * 2012-05-29 2012-10-03 中国科学院长春光学精密机械与物理研究所 微透镜集成垂直腔面发射激光器的相干控制阵列结构
JP2014096419A (ja) * 2012-11-07 2014-05-22 Stanley Electric Co Ltd 光電子デバイス
CN105874662B (zh) 2013-04-22 2019-02-22 三流明公司 用于高频率操作的光电器件的多光束阵列的微透镜
DE102013104270A1 (de) * 2013-04-26 2014-10-30 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
US20150311673A1 (en) * 2014-04-29 2015-10-29 Princeton Optronics Inc. Polarization Control in High Peak Power, High Brightness VCSEL
TWM503009U (zh) * 2014-11-14 2015-06-11 Ahead Optoelectronics Inc 半導體雷射－繞射光學元件模組
JP6331997B2 (ja) 2014-11-28 2018-05-30 三菱電機株式会社 半導体光素子
JP6487195B2 (ja) * 2014-12-09 2019-03-20 日本オクラロ株式会社 半導体光集積素子、半導体光集積素子の製造方法及び光モジュール
EP3130950A1 (de) * 2015-08-10 2017-02-15 Multiphoton Optics Gmbh Strahlumlenkelement sowie optisches bauelement mit strahlumlenkelement
DE102016116747A1 (de) 2016-09-07 2018-03-08 Osram Opto Semiconductors Gmbh Diffraktives optisches element und verfahren zu seiner herstellung

Also Published As

Publication number Publication date
CN110192312A (zh) 2019-08-30
WO2018134086A1 (de) 2018-07-26
DE112018000431A5 (de) 2019-09-26
DE102017100997A1 (de) 2018-07-19
JP2019536287A (ja) 2019-12-12
DE112018000431B4 (de) 2022-03-17
US20190245326A1 (en) 2019-08-08
JP7232883B2 (ja) 2023-03-03
CN110192312B (zh) 2021-09-24
JP2022009737A (ja) 2022-01-14
TW201832434A (zh) 2018-09-01
US10797469B2 (en) 2020-10-06
TWI687006B (zh) 2020-03-01
CN113872048B (zh) 2024-07-02
CN113872048A (zh) 2021-12-31

Similar Documents

Publication Publication Date Title
JP6970748B2 (ja) 半導体レーザおよびそのような半導体レーザの製造方法
JP5550550B2 (ja) 複数のオプトエレクトロニクスコンポーネントを製造する方法およびオプトエレクトロニクスコンポーネント
KR101433423B1 (ko) 광전 소자들의 제조 방법 및 광전 소자
TWI692076B (zh) 具有微透鏡陣列之發光二極體顯示器面板
EP2919283B1 (en) Semiconductor light emitting device
JP5355536B2 (ja) 光電素子および光電素子の製造方法
US10553748B2 (en) Semiconductor component and illumination device
JP2019530234A (ja) シリコン制御バックプレーン上に一体化された垂直エミッタ
US10290782B2 (en) Method for mirror-coating lateral surfaces of optical components for use in optoelectronic semiconductor bodies, and optoelectronic semiconductor body which can be mounted on surfaces
EP3781972B1 (en) Optical assembly
KR20150144401A (ko) 반도체 발광소자 패키지의 제조 방법
US12142712B2 (en) Radiation-emitting semiconductor component and method for producing radiation-emitting semiconductor component
JP2013507011A (ja) 変換素子を介したオプトエレクトロニクス半導体コンポーネントの接続方法およびオプトエレクトロニクス半導体コンポーネント
CN117355999A (zh) 光电子半导体芯片和组件
TW200937783A (en) Method for the production of semiconductor chips and semiconductor chip
CN111433922B (zh) 包括转换器约束的led封装
CN104704642A (zh) 用于制造光电子器件的方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190521

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190521

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200707

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20200925

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20200925

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20200930

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210106

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210615

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210910

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20211005

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20211029

R150 Certificate of patent or registration of utility model

Ref document number: 6970748

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250