JP2019536287A - 半導体レーザおよびそのような半導体レーザの製造方法 - Google Patents
半導体レーザおよびそのような半導体レーザの製造方法 Download PDFInfo
- Publication number
- JP2019536287A JP2019536287A JP2019527306A JP2019527306A JP2019536287A JP 2019536287 A JP2019536287 A JP 2019536287A JP 2019527306 A JP2019527306 A JP 2019527306A JP 2019527306 A JP2019527306 A JP 2019527306A JP 2019536287 A JP2019536287 A JP 2019536287A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- optical element
- diffractive optical
- semiconductor
- optically effective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
- H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18388—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
− 半導体レーザチップを設けるステップ、および、
− 回折光学素子を半導体レーザチップに結合する、および/または、半導体レーザチップにおいて回折光学素子を形成する、ステップ
本特許出願は、独国特許出願第102017100997.3号の優先権を主張し、この文書の開示内容は参照により本明細書に組み込まれている。
2 成長基板
3 回折光学素子
32 キャリア基板
33 光学的に活性な構造
34 半導体層
35 原料層
37 平坦化層
39 接合領域
4 半導体レーザチップ
40 半導体積層体
41 活性ゾーン
44 光出口面
46 ブラッグミラー
47 個々のレーザ
48 電流狭窄部
5 結合手段
6 隙間
7 注型材
8 実装支持体
91 アノードコンタクト
92 カソードコンタクト
93 接合層
94 充填材
95 貫通接続部
G 成長方向
L レーザ放射
Claims (18)
- 半導体レーザ(1)であって、
− レーザ放射(L)を生成するための少なくとも1つの活性ゾーンを有する半導体積層体(40)を備えており、かつ、前記半導体積層体(40)の成長方向(G)に垂直な向きにある光出口面(44)を備えている、少なくとも1個の面発光型半導体レーザチップ(4)と、
− 前記レーザ放射(L)を広げて分散させるように構成されている回折光学素子(3)と、
を備えており、
− 前記回折光学素子(3)の光学的に有効な構造(33)が、前記レーザ放射(L)の最大強度の波長に対して少なくとも1.65の屈折率を有する材料からなり、
− 前記回折光学素子(3)の理由で前記レーザ放射(L)を拡幅および分散させることにより、前記半導体レーザ(1)が目に安全である、
半導体レーザ(1)。 - 前記回折光学素子(3)と前記半導体レーザチップ(4)との間に、少なくとも部分的に、前記回折光学素子(3)のための結合手段(5)のみが位置しているように、前記回折光学素子(3)が前記光出口面(44)の上に位置している、
請求項1に記載の半導体レーザ(1)。 - 前記結合手段が前記光出口面(44)を完全に覆っているように、前記結合手段(5)が、前記光出口面(44)と前記回折光学素子(3)との間の領域全体にわたり延在している、
請求項2に記載の半導体レーザ(1)。 - 前記光出口面(44)に前記結合手段(5)が存在しないように、かつ、前記回折光学素子(3)と前記光出口面(44)との間に少なくとも部分的に隙間(6)が形成されるように、前記結合手段(5)が前記回折光学素子(3)の縁部に配置されている、
請求項2に記載の半導体レーザ(1)。 - 前記結合手段(5)が、前記光学的に有効な構造(33)に少なくとも部分的に係合しており、かつ前記光学的に有効な構造(33)を少なくとも部分的に完全に満たしている、
請求項2から請求項4のいずれか1項に記載の半導体レーザ(1)。 - 前記回折光学素子(3)が、前記光出口面(44)の上に直接かつ領域全体にわたり位置している、
請求項1に記載の半導体レーザ(1)。 - 前記回折光学素子(3)がキャリア基板(32)を備えており、
前記光学的に有効な構造(33)が、前記光出口面(44)の側の前記キャリア基板(32)の面に位置している、
請求項1から請求項6のいずれか1項に記載の半導体レーザ(1)。 - 前記光学的に有効な構造(33)が半導体材料からなり、
前記キャリア基板(32)が、前記光学的に有効な構造(33)の前記半導体材料のための成長基板である、
請求項7に記載の半導体レーザ(1)。 - 前記半導体レーザチップ(4)が、前記半導体積層体(40)の成長基板(2)を備えており、前記回折光学素子(3)が、前記半導体積層体(40)とは反対側の前記成長基板(2)の面に形成されており、
前記回折光学素子(3)および前記半導体レーザチップ(4)が一体に形成されるように、前記回折光学素子(3)が前記光出口面(44)を形成している、
請求項1に記載の半導体レーザ(1)。 - 前記結合手段(5)が、平面視において見たとき、前記半導体レーザチップ(4)の横のみに延在しておりかつ前記半導体レーザチップ(4)に接触していないように、前記半導体レーザチップ(4)と、前記回折光学素子(3)のための前記結合手段(5)とが、共通の実装支持体(8)の上に配置されており、
前記結合手段(5)が、前記実装支持体(8)および前記回折光学素子(3)に直接接触しており、前記回折光学素子(3)が前記半導体レーザチップ(4)を完全に覆っている、
請求項1に記載の半導体レーザ(1)。 - 複数の前記半導体レーザチップ(4)を備えており、
前記半導体レーザチップ(4)が、連続的かつ一体に形成されている前記回折光学素子(3)によって一緒にかつ完全に覆われている、
請求項1から請求項10のいずれか1項に記載の半導体レーザ(1)。 - 前記回折光学素子(3)と前記半導体レーザチップ(4)との間の距離が、前記レーザ放射(L)の最大強度の波長の最大で10倍である、
請求項1から請求項11のいずれか1項に記載の半導体レーザ(1)。 - 前記回折光学素子(3)が少なくとも部分的に注型材(7)によって直接囲まれており、
前記注型材(7)が前記光学的に有効な構造(33)に接触している、
請求項1から請求項12のいずれか1項に記載の半導体レーザ(1)。 - 前記回折光学素子(3)の前記光学的に有効な構造(33)が、少なくとも2.0の屈折率を有する材料からなる、
請求項1から請求項13のいずれか1項に記載の半導体レーザ(1)。 - 前記半導体積層体(40)が少なくとも1つのブラッグミラー(46a,46b)を備えており、
前記ブラッグミラー(46a,46b)が電気的貫通接続部(95)によって貫かれており、前記半導体レーザ(1)を表面実装することができるように前記活性ゾーン(41)の共通の側に電気的接続面が形成されており、
動作時に電流狭窄部(48)の少なくとも1つの電流伝達領域においてのみ前記活性ゾーン(41)に電流が供給されるように、前記ブラッグミラー(46a,46b)に前記電流狭窄部(48)が作製されている、
請求項1から請求項14のいずれか1項に記載の半導体レーザ(1)。 - 前記活性ゾーン(41)の相異なる側に位置する2つの前記ブラッグミラー(46a,46b)を備えており、
前記ブラッグミラー(46a,46b)それぞれが、前記貫通接続部(95)によって貫かれている、
請求項15に記載の半導体レーザ(1)。 - 前記光出口面(44)が、前記回折光学素子(3)に面する側において、平面視において見たとき、前記アノードコンタクト(91)の材料または前記カソードコンタクト(92)の材料によって完全に囲まれているように、前記半導体積層体(40)と前記回折光学素子(3)との間にアノードコンタクト(91)またはカソードコンタクト(92)が延在しており、
前記アノードコンタクト(91)または前記カソードコンタクト(92)が、前記生成されるレーザ放射(L)に対して不透過性であり、かつ金属性である、
請求項1から請求項16のいずれか1項に記載の半導体レーザ(1)。 - 請求項1から請求項17のいずれか1項に記載の半導体レーザ(1)を製造する方法であって、以下のステップ、すなわち、
− 前記半導体レーザチップ(4)を設けるステップと、
− 前記半導体レーザチップ(4)に前記回折光学素子(3)を結合する、または、前記半導体レーザチップ(4)に前記回折光学素子(3)を形成する、ステップと、
を含む、方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021177494A JP7232883B2 (ja) | 2017-01-19 | 2021-10-29 | 半導体レーザおよびそのような半導体レーザの製造方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102017100997.3 | 2017-01-19 | ||
DE102017100997.3A DE102017100997A1 (de) | 2017-01-19 | 2017-01-19 | Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers |
PCT/EP2018/050459 WO2018134086A1 (de) | 2017-01-19 | 2018-01-09 | Halbleiterlaser und verfahren zur herstellung eines solchen halbleiterlasers |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021177494A Division JP7232883B2 (ja) | 2017-01-19 | 2021-10-29 | 半導体レーザおよびそのような半導体レーザの製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2019536287A true JP2019536287A (ja) | 2019-12-12 |
JP2019536287A5 JP2019536287A5 (ja) | 2020-01-30 |
JP6970748B2 JP6970748B2 (ja) | 2021-11-24 |
Family
ID=61017905
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019527306A Active JP6970748B2 (ja) | 2017-01-19 | 2018-01-09 | 半導体レーザおよびそのような半導体レーザの製造方法 |
JP2021177494A Active JP7232883B2 (ja) | 2017-01-19 | 2021-10-29 | 半導体レーザおよびそのような半導体レーザの製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021177494A Active JP7232883B2 (ja) | 2017-01-19 | 2021-10-29 | 半導体レーザおよびそのような半導体レーザの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10797469B2 (ja) |
JP (2) | JP6970748B2 (ja) |
CN (2) | CN110192312B (ja) |
DE (2) | DE102017100997A1 (ja) |
TW (1) | TWI687006B (ja) |
WO (1) | WO2018134086A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022107614A1 (ja) * | 2020-11-20 | 2022-05-27 | 国立大学法人東京工業大学 | 光偏向デバイス |
US11469609B2 (en) | 2017-09-22 | 2022-10-11 | Guangdong Oppo Mobile Telecommunications Corp., Ltd. | Power supply circuit, power supply device and control method |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018102961A1 (en) * | 2016-12-05 | 2018-06-14 | Goertek.Inc | Micro laser diode transfer method and manufacturing method |
DE102017112235A1 (de) | 2017-06-02 | 2018-12-06 | Osram Opto Semiconductors Gmbh | Laserdiode und Verfahren zum Herstellen einer Laserdiode |
DE102017122325A1 (de) | 2017-09-26 | 2019-03-28 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung von strahlungsemittierenden Halbleiterbauelementen |
DE102018123931A1 (de) * | 2018-09-27 | 2020-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement mit Saphirträger und Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements |
DE102019100794A1 (de) * | 2018-12-20 | 2020-06-25 | Osram Opto Semiconductors Gmbh | Laservorrichtung und verfahren zur herstellung einer laservorrichtung |
DE102019104986A1 (de) * | 2019-02-27 | 2020-08-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
US11025033B2 (en) * | 2019-05-21 | 2021-06-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bump bonding structure to mitigate space contamination for III-V dies and CMOS dies |
DE102020118159A1 (de) | 2020-07-09 | 2022-01-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Laservorrichtung |
US20220109287A1 (en) * | 2020-10-01 | 2022-04-07 | Vixar, Inc. | Metalens Array and Vertical Cavity Surface Emitting Laser Systems and Methods |
DE102022103260A1 (de) * | 2022-02-11 | 2023-08-17 | Ams-Osram International Gmbh | Laserbauelement |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000070707A (ja) * | 1998-09-01 | 2000-03-07 | Sony Corp | 光触媒装置 |
JP2001196608A (ja) * | 1999-11-30 | 2001-07-19 | Agilent Technol Inc | 赤外線トランシーバ及びそれに使用される発光装置 |
JP2001266390A (ja) * | 2000-01-20 | 2001-09-28 | Samsung Electronics Co Ltd | 近視野記録再生用光ヘッド及びその製造方法 |
JP2002368334A (ja) * | 2001-03-26 | 2002-12-20 | Seiko Epson Corp | 面発光レーザ、フォトダイオード、それらの製造方法及びそれらを用いた光電気混載回路 |
JP2006351798A (ja) * | 2005-06-15 | 2006-12-28 | Fuji Xerox Co Ltd | トンネル接合型面発光半導体レーザ装置およびその製造方法 |
JP2007049017A (ja) * | 2005-08-11 | 2007-02-22 | Ricoh Co Ltd | 光電気変換モジュール |
US7289547B2 (en) * | 2003-10-29 | 2007-10-30 | Cubic Wafer, Inc. | Laser and detector device |
US20110165707A1 (en) * | 2008-05-22 | 2011-07-07 | Connector Optics Llc | Method for attaching optical components onto silicon-based integrated circuits |
JP2014096419A (ja) * | 2012-11-07 | 2014-05-22 | Stanley Electric Co Ltd | 光電子デバイス |
US20150311673A1 (en) * | 2014-04-29 | 2015-10-29 | Princeton Optronics Inc. | Polarization Control in High Peak Power, High Brightness VCSEL |
US20160164261A1 (en) * | 2009-02-17 | 2016-06-09 | Trilumina Corp. | Compact multi-zone infrared laser illuminator |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0827407B2 (ja) * | 1993-06-02 | 1996-03-21 | 日本電気株式会社 | 微細グレーティング形成方法 |
JP3243772B2 (ja) * | 1993-12-21 | 2002-01-07 | 日本電信電話株式会社 | 面発光半導体レーザ |
US6888871B1 (en) | 2000-07-12 | 2005-05-03 | Princeton Optronics, Inc. | VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system |
JP2002026452A (ja) * | 2000-07-12 | 2002-01-25 | Toyota Central Res & Dev Lab Inc | 面発光型光源及びその製造方法、レーザ加工機用光源 |
WO2002067393A1 (de) * | 2001-02-20 | 2002-08-29 | Osram Opto Semiconductors Gmbh | Optisch gepumpte oberflächenemittierende halbleiterlaservorrichtung und verfahren zu deren herstellung |
US6775308B2 (en) * | 2001-06-29 | 2004-08-10 | Xanoptix, Inc. | Multi-wavelength semiconductor laser arrays and applications thereof |
AU2003211414A1 (en) * | 2002-03-08 | 2003-09-22 | Sharp Kabushiki Kaisha | Light source apparatus and optical communication module comprising it |
JP2004279634A (ja) * | 2003-03-14 | 2004-10-07 | Nikon Corp | 光学部品とその製造方法及び露光装置 |
JP4092570B2 (ja) | 2003-07-23 | 2008-05-28 | セイコーエプソン株式会社 | 光素子およびその製造方法、光モジュール、ならびに光モジュールの駆動方法 |
US6947224B2 (en) | 2003-09-19 | 2005-09-20 | Agilent Technologies, Inc. | Methods to make diffractive optical elements |
US20050067681A1 (en) | 2003-09-26 | 2005-03-31 | Tessera, Inc. | Package having integral lens and wafer-scale fabrication method therefor |
WO2005071808A1 (ja) | 2004-01-23 | 2005-08-04 | Nec Corporation | 面発光レーザ |
EP1569276A1 (en) | 2004-02-27 | 2005-08-31 | Heptagon OY | Micro-optics on optoelectronics |
US7223619B2 (en) * | 2004-03-05 | 2007-05-29 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | VCSEL with integrated lens |
CN100474716C (zh) * | 2004-05-28 | 2009-04-01 | 奥斯兰姆奥普托半导体有限责任公司 | 具有垂直发射方向的表面发射的半导体激光器部件 |
JP2006066538A (ja) * | 2004-08-25 | 2006-03-09 | Hamamatsu Photonics Kk | 面発光レーザ光源の製造方法及び面発光レーザ光源 |
US7295375B2 (en) * | 2005-08-02 | 2007-11-13 | International Business Machines Corporation | Injection molded microlenses for optical interconnects |
TWI258198B (en) * | 2005-09-19 | 2006-07-11 | Chunghwa Telecom Co Ltd | A method applying a transparent electrode having microlens form in VCSEL |
JP2007214669A (ja) * | 2006-02-07 | 2007-08-23 | Rohm Co Ltd | 光通信システム |
US8320032B2 (en) | 2007-06-04 | 2012-11-27 | Nokia Corporation | Diffractive beam expander and a virtual display based on a diffractive beam expander |
JP4970217B2 (ja) * | 2007-11-07 | 2012-07-04 | 株式会社東芝 | 物質の測定方法 |
DE102008012859B4 (de) * | 2007-12-21 | 2023-10-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Laserlichtquelle mit einer Filterstruktur |
DE102008048903B4 (de) * | 2008-09-25 | 2021-06-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauteil |
JP2010147315A (ja) * | 2008-12-19 | 2010-07-01 | Fuji Xerox Co Ltd | 光半導体装置、光伝送装置及び面発光素子 |
JP2010212664A (ja) * | 2009-02-10 | 2010-09-24 | Renesas Electronics Corp | 半導体レーザとその製造方法 |
US9232592B2 (en) * | 2012-04-20 | 2016-01-05 | Trilumina Corp. | Addressable illuminator with eye-safety circuitry |
DE102009056387B9 (de) * | 2009-10-30 | 2020-05-07 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaser mit einem Phasenstrukturbereich zur Selektion lateraler Lasermoden |
US8582618B2 (en) | 2011-01-18 | 2013-11-12 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive or refractive lens on the semiconductor laser device |
CN102709808A (zh) * | 2012-05-29 | 2012-10-03 | 中国科学院长春光学精密机械与物理研究所 | 微透镜集成垂直腔面发射激光器的相干控制阵列结构 |
CN105874662B (zh) | 2013-04-22 | 2019-02-22 | 三流明公司 | 用于高频率操作的光电器件的多光束阵列的微透镜 |
DE102013104270A1 (de) * | 2013-04-26 | 2014-10-30 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
TWM503009U (zh) * | 2014-11-14 | 2015-06-11 | Ahead Optoelectronics Inc | 半導體雷射-繞射光學元件模組 |
JP6331997B2 (ja) | 2014-11-28 | 2018-05-30 | 三菱電機株式会社 | 半導体光素子 |
JP6487195B2 (ja) * | 2014-12-09 | 2019-03-20 | 日本オクラロ株式会社 | 半導体光集積素子、半導体光集積素子の製造方法及び光モジュール |
EP3130950A1 (de) * | 2015-08-10 | 2017-02-15 | Multiphoton Optics Gmbh | Strahlumlenkelement sowie optisches bauelement mit strahlumlenkelement |
DE102016116747A1 (de) | 2016-09-07 | 2018-03-08 | Osram Opto Semiconductors Gmbh | Diffraktives optisches element und verfahren zu seiner herstellung |
-
2017
- 2017-01-19 DE DE102017100997.3A patent/DE102017100997A1/de not_active Withdrawn
-
2018
- 2018-01-09 CN CN201880007155.4A patent/CN110192312B/zh active Active
- 2018-01-09 WO PCT/EP2018/050459 patent/WO2018134086A1/de active Application Filing
- 2018-01-09 CN CN202111030865.9A patent/CN113872048A/zh active Pending
- 2018-01-09 JP JP2019527306A patent/JP6970748B2/ja active Active
- 2018-01-09 US US16/343,989 patent/US10797469B2/en active Active
- 2018-01-09 DE DE112018000431.7T patent/DE112018000431B4/de active Active
- 2018-01-18 TW TW107101877A patent/TWI687006B/zh active
-
2021
- 2021-10-29 JP JP2021177494A patent/JP7232883B2/ja active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000070707A (ja) * | 1998-09-01 | 2000-03-07 | Sony Corp | 光触媒装置 |
JP2001196608A (ja) * | 1999-11-30 | 2001-07-19 | Agilent Technol Inc | 赤外線トランシーバ及びそれに使用される発光装置 |
JP2001266390A (ja) * | 2000-01-20 | 2001-09-28 | Samsung Electronics Co Ltd | 近視野記録再生用光ヘッド及びその製造方法 |
JP2002368334A (ja) * | 2001-03-26 | 2002-12-20 | Seiko Epson Corp | 面発光レーザ、フォトダイオード、それらの製造方法及びそれらを用いた光電気混載回路 |
US7289547B2 (en) * | 2003-10-29 | 2007-10-30 | Cubic Wafer, Inc. | Laser and detector device |
JP2006351798A (ja) * | 2005-06-15 | 2006-12-28 | Fuji Xerox Co Ltd | トンネル接合型面発光半導体レーザ装置およびその製造方法 |
JP2007049017A (ja) * | 2005-08-11 | 2007-02-22 | Ricoh Co Ltd | 光電気変換モジュール |
US20110165707A1 (en) * | 2008-05-22 | 2011-07-07 | Connector Optics Llc | Method for attaching optical components onto silicon-based integrated circuits |
US20160164261A1 (en) * | 2009-02-17 | 2016-06-09 | Trilumina Corp. | Compact multi-zone infrared laser illuminator |
JP2014096419A (ja) * | 2012-11-07 | 2014-05-22 | Stanley Electric Co Ltd | 光電子デバイス |
US20150311673A1 (en) * | 2014-04-29 | 2015-10-29 | Princeton Optronics Inc. | Polarization Control in High Peak Power, High Brightness VCSEL |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11469609B2 (en) | 2017-09-22 | 2022-10-11 | Guangdong Oppo Mobile Telecommunications Corp., Ltd. | Power supply circuit, power supply device and control method |
WO2022107614A1 (ja) * | 2020-11-20 | 2022-05-27 | 国立大学法人東京工業大学 | 光偏向デバイス |
Also Published As
Publication number | Publication date |
---|---|
JP6970748B2 (ja) | 2021-11-24 |
JP2022009737A (ja) | 2022-01-14 |
TW201832434A (zh) | 2018-09-01 |
JP7232883B2 (ja) | 2023-03-03 |
DE112018000431B4 (de) | 2022-03-17 |
DE112018000431A5 (de) | 2019-09-26 |
DE102017100997A1 (de) | 2018-07-19 |
CN113872048A (zh) | 2021-12-31 |
WO2018134086A1 (de) | 2018-07-26 |
US20190245326A1 (en) | 2019-08-08 |
TWI687006B (zh) | 2020-03-01 |
CN110192312A (zh) | 2019-08-30 |
CN110192312B (zh) | 2021-09-24 |
US10797469B2 (en) | 2020-10-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7232883B2 (ja) | 半導体レーザおよびそのような半導体レーザの製造方法 | |
JP7165170B2 (ja) | 製造方法、及び、光電子デバイス | |
JP5550550B2 (ja) | 複数のオプトエレクトロニクスコンポーネントを製造する方法およびオプトエレクトロニクスコンポーネント | |
EP2919283B1 (en) | Semiconductor light emitting device | |
US11393949B2 (en) | Semiconductor component and illumination device | |
JP2020530941A (ja) | 表面実装対応可能なvcselアレイ | |
US9172213B2 (en) | VCSEL module and manufacture thereof | |
US10886704B2 (en) | Semiconductor laser and method for producing a semiconductor laser | |
CN111630734B (zh) | 用于制造光电子半导体组件的方法和光电子半导体组件 | |
KR20070004737A (ko) | 광전 소자, 다수의 광전 소자를 구비한 장치 및 광전소자를 제조하기 위한 방법 | |
KR20150144401A (ko) | 반도체 발광소자 패키지의 제조 방법 | |
JP2015513226A (ja) | 発光半導体部品および発光半導体部品の製造方法 | |
EP3781972B1 (en) | Optical assembly | |
US11848406B2 (en) | Radiation-emitting semiconductor component and method for producing radiation-emitting semiconductor component | |
JP6228686B2 (ja) | オプトエレクトロニクス半導体コンポーネントを製造する方法及びオプトエレクトロニクス半導体コンポーネント | |
TW200937783A (en) | Method for the production of semiconductor chips and semiconductor chip | |
US20210126155A1 (en) | Method for Producing a Component and Optoelectronic Component | |
CN104704642B (zh) | 用于制造光电子器件的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190521 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190521 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200707 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20200925 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20200925 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20200930 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210106 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210615 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210910 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211005 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211029 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6970748 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |