CN110060926B - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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CN110060926B
CN110060926B CN201910031363.4A CN201910031363A CN110060926B CN 110060926 B CN110060926 B CN 110060926B CN 201910031363 A CN201910031363 A CN 201910031363A CN 110060926 B CN110060926 B CN 110060926B
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metal film
electrode
film
semiconductor device
manufacturing
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CN110060926A (zh
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曾根田真也
原田健司
中田洋辅
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

本发明的目的在于提供一种半导体装置的制造方法，该半导体装置的制造方法能够兼顾热应力环境下的半导体装置的可靠性以及制造工序中的组装性的提高。在半导体装置的制造方法中，在半导体基板的一个主面，通过将第1导电膜堆积、图案化，从而形成第1电极，在第1电极之上，形成与第1电极所具有的图案对应的第1金属膜，在半导体基板的另一个主面，通过将第2导电膜堆积，从而形成第2电极，在第2电极之上，形成比第1金属膜薄的第2金属膜，分别在第1金属膜之上以及第2金属膜之上通过非电解镀而一起形成第3金属膜。

Description

半导体装置的制造方法
技术领域
本发明涉及半导体装置的制造方法。
背景技术
在专利文献1或者专利文献2中，公开有为了将外部电极与半导体元件的电极通过焊料进行直接接合，在表面电极(在专利文献2中是上表面的阳极电极)之上具有金属膜的半导体装置。根据具有如上述的结构的半导体装置，能够实现在降低电阻的同时能进行大电流的通电的配线。
专利文献1：国际公开第2014/037996号
专利文献2：日本特开2016－48760号公报
专利文献3：日本专利第6250868号公报
在半导体元件的电流流过的部分承受由于温度循环而引起的热应力。在这样的热应力环境下，金属膜与焊料之间进行合金化，金属膜的厚度不断减小。为了确保接合部的可靠性，需要设计为在半导体装置的使用条件下，金属膜不会消失。因此，在要求应对严酷的热应力环境的用途中，需要设计以金属膜不会消失的程度具有厚度厚的金属膜的半导体装置。在形成如上述的厚的金属膜时，相比于溅射技术，镀敷技术更适用。
就专利文献1以及2示出的半导体装置而言，仅在从保护膜的开口部露出的表面电极之上，通过镀敷技术而形成有金属膜。为了应对热应力环境下的上述的课题，需要与表面侧相同地在背面侧也形成厚的金属膜。在专利文献3中，提出了分别在表面电极之上以及背面电极之上形成有镀层的半导体元件。镀敷技术能够在半导体装置的两面同时形成金属膜，但如果不应用特别的工艺，则在各面形成大致相同厚度的金属膜。因此，相比于与在表面电极露出的区域对应地形成的表面侧的金属膜的应力，在整个背面形成的金属膜的应力较强。可想到由于该应力，半导体装置翘曲而成为向表面侧凸、即向上凸的形状。特别地，对于通过镀敷技术而形成的金属膜，在通过焊料而与外部电极接合之前，需要进行用于脱气的热处理。可想到在该热处理时发生由上述的应力引起的翘曲。在半导体装置翘曲成凸形的状态下，在背面电极与外部电极通过焊料进行接合的情况下，在凸部容易产生焊料的空隙，产生组装不良。凸状的翘曲主要由于上述的应力差即金属膜的体积差而产生。仅通过镀敷工艺，难以在两面同时形成金属膜并且使各个金属膜具有厚度差。在专利文献3中，提出了通过表面电极以及背面电极的面积差对表面以及背面的各镀层的成膜速度进行控制的半导体元件的制造方法。但是，电极面积是与半导体元件的设计本身相关的参数。由此，正在谋求能够提高半导体元件的设计自由度、同时还能够提高生产率的制造方法。
另外，当在保护膜的开口部形成金属膜的情况下，存在下述课题，即，无法制作如专利文献1所公开的那样的将金属膜的端部通过保护膜进行覆盖的构造。
发明内容
本发明就是为了解决上述问题而提出的，其目的在于提供一种半导体装置的制造方法，该半导体装置的制造方法能够兼顾热应力环境下的半导体装置的可靠性、半导体装置的设计自由度以及制造工序中的生产率的提高。
本发明涉及的半导体装置的制造方法是，在半导体基板的一个主面，通过将第1导电膜堆积、图案化，从而形成第1电极，在第1电极之上，形成与第1电极所具有的图案对应的第1金属膜，在半导体基板的另一个主面，通过将第2导电膜堆积，从而形成第2电极，在第2电极之上形成比第1金属膜薄的第2金属膜，分别在第1金属膜之上以及第2金属膜之上通过非电解镀而一起形成第3金属膜。
发明的效果
根据本发明，能够提供一种半导体装置的制造方法，该半导体装置的制造方法能够兼顾热应力环境下的半导体装置的可靠性、半导体装置的设计自由度以及制造工序中的生产率的提高。
本发明的目的、特征、方案、以及优点通过以下的详细说明和附图会更加清楚。
附图说明
图1是表示实施方式1中的半导体装置的结构的剖面图。
图2是表示实施方式1中的半导体装置的制造方法的流程图。
图3是表示前提技术中的半导体装置的结构的剖面图。
图4是表示实施方式2中的半导体装置的结构的剖面图。
图5是表示实施方式2中的半导体装置的制造方法的流程图。
图6是表示实施方式3中的半导体装置的结构的剖面图。
图7是表示实施方式3中的半导体装置的制造方法的流程图。
图8是表示实施方式4中的半导体装置的制造方法的流程图。
图9是表示实施方式4中的形成第1防氧化膜以及第2防氧化膜之后的半导体装置的构造的剖面图。
图10是表示实施方式4中的去除第1防氧化膜以及第2防氧化膜之后的半导体装置的构造的剖面图。
图11是表示实施方式4中的形成第3金属膜之后的半导体装置的构造的剖面图。
标号的说明
1半导体基板，1a表面，1b背面，2第1电极，2a端部，3第3电极，3a端部，4保护膜，5第1金属膜，5a端部，6第2电极，7第2金属膜，8第3金属膜，9第1防氧化膜，10第2防氧化膜。
具体实施方式
下面，对半导体装置的制造方法的实施方式进行说明。
＜实施方式1＞
(半导体装置的结构)
图1是表示实施方式1中的半导体装置的结构的剖面图。半导体装置由半导体基板1、第1电极2、第3电极3、保护膜4、第1金属膜5、第2电极6、第2金属膜7以及第3金属膜8构成。
在半导体基板1作为半导体元件设置有开关元件(未图示)。半导体元件例如是电力半导体元件。电力半导体元件例如是包含宽带隙半导体的MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor)或者IGBT(Insulated Gate BipolarTransistor)。半导体装置例如是包含电力半导体元件的电力半导体装置。
第1电极2设置于半导体基板1的表面1a即一个主面，具有规定的图案。第1电极2是用于供半导体元件的主电流流过的电极，例如是MOSFET的源极电极，或者，是IGBT的发射极电极。第1电极2例如是包含Al、Si、Cu等的Al合金。第1电极2的厚度例如是0.1μm至5μm左右。
第3电极3在半导体基板1的表面1a即一个主面，与第1电极2分离而设置。第3电极3是施加用于对半导体元件的通断动作进行控制的电压信号的电极，例如是MOSFET或者IGBT的栅极电极。
保护膜4在半导体基板1的表面1a，设置为对第1电极2所具有的图案的端部2a进行覆盖。第1电极2的一部分从通过对第1电极2的端部2a进行覆盖而形成的保护膜4的开口部露出。另外，保护膜4还设置于第3电极3所具有的图案的端部3a。第3电极3的一部分从通过对第3电极3的端部3a进行覆盖而形成的保护膜4的开口部露出。保护膜4例如是由聚酰亚胺构成的绝缘膜。
第1金属膜5设置于从保护膜4的开口部露出的第1电极2之上。即，第1金属膜5与第1电极2所具有的图案对应地设置。第1金属膜5还设置于从保护膜4的开口部露出的第3电极3之上。即，第1金属膜5还与第3电极3所具有的图案对应地设置。第1金属膜5是焊料接合用金属膜。第1金属膜5例如包含Ni或者Cu。
第2电极6设置于半导体基板1的背面1b即另一个主面。在实施方式1中，第2电极6具有与第1电极2相比更大的面积，在这里，设置于整个背面1b。第2电极6是用于供半导体元件的主电流流过的电极，例如是MOSFET的漏极电极，或者，是IGBT的集电极(collector)电极(electrode)。第2电极6是包含例如Al、Si、Cu等的Al合金。第2电极6的厚度例如是0.1μm至5μm左右。
第2金属膜7设置于第2电极6之上。第2金属膜7是焊料接合用金属膜。第2金属膜7包含例如Ni或者Cu。第1金属膜5的厚度t1以及第2金属膜7的厚度t2具有t1＞t2的关系。
第3金属膜8分别设置于第1金属膜5之上以及第2金属膜7之上。第3金属膜8包含例如Ni或者Cu。第3金属膜8也可以包含P或者Au。
(半导体装置的制造方法)
对实施方式1中的半导体装置的制造方法进行说明。图2是表示实施方式1中的半导体装置的制造方法的流程图。
在步骤S10中，在半导体基板1的表面1a即一个主面，通过将第1导电膜进行堆积、图案化，从而形成第1电极2以及与第1电极2分离设置的第3电极3。例如，首先，在半导体基板1的表面1a，堆积第1导电膜。第1导电膜例如通过蒸镀法或者溅射法而成膜。第1导电膜在这里是包含Al的膜。通过光刻技术(照相制版技术)而将第1导电膜图案化。由此，形成包含Al、具有规定的图案的第1电极2和第3电极3。
在步骤S20中，在第1电极2之上，形成与第1电极2所具有的图案对应的第1金属膜5，在第3电极3之上，形成与第3电极3所具有的图案对应的第1金属膜5。例如，使第1金属材料通过蒸镀法或者溅射法而堆积于半导体基板1的表面1a，通过光刻技术和蚀刻技术而图案化。或者，在通过光刻技术而图案化之后，使第1金属材料通过蒸镀法或者溅射法而堆积于半导体基板1的表面1a，通过剥离技术而形成与上述的图案对应的第1金属膜5。在这里，第1金属材料是Ni，第1金属膜5是Ni膜。
在步骤S30中，在半导体基板1的表面1a，形成对第1电极2以及第3电极3分别所具有的图案的端部2a以及端部3a进行覆盖的保护膜4。例如，对聚酰亚胺等的绝缘膜通过光刻技术而图案化。此时，图案化为第1电极2以及第3电极3分别从位于第1电极2的端部2a以及第3电极3的端部3a各自的内侧的保护膜4的开口部露出。由此，形成保护膜4。此外，执行步骤S20以及步骤S30的顺序也可以相反。
在步骤S40中，通过在半导体基板1的背面1b即另一个主面堆积第2导电膜，从而形成第2电极6。第2导电膜例如通过蒸镀法或者溅射法而堆积。第2导电膜在这里是包含Al的膜。通过该步骤，从而形成包含Al的第2电极6。
在步骤S50中，在第2电极6之上，形成比第1金属膜5薄的第2金属膜7。第2金属膜7例如是将第2金属材料通过蒸镀法或者溅射法在第2电极6之上堆积而形成的。在这里，第2金属材料是Ni，第2金属膜7是Ni膜。第2金属膜7的厚度t2是根据形成第1金属膜5的保护膜4的开口部的面积即比率而调整的。即，根据第1金属膜5的体积，调整第2金属膜7的成膜厚度。此外，也可以将第2金属膜7的厚度固定，在步骤S20中调整第1金属膜5的厚度。
在步骤S60中，分别在第1金属膜5之上以及第2金属膜7之上通过非电解镀法而一起形成第3金属膜8。在这里，第3金属膜8是包含NiP的膜。第1金属膜5、第2金属膜7以及第3金属膜8是焊料接合用金属膜。
(前提技术)
在对实施方式1中的半导体装置的制造方法的效果进行说明之前，对前提技术进行说明。图3是表示前提技术中的半导体装置的结构的剖面图。前提技术中的半导体装置在未设置第1金属膜5以及第2金属膜7这一点上与图1所示的半导体装置不同。由于前提技术中的在半导体装置的表面1a侧形成的第3金属膜8与在背面1b侧形成的第3金属膜8之间的体积差，半导体装置呈向上凸、即向表面1a侧凸的形状。
(效果)
在实施方式1的半导体装置的制造方法中，与保护膜4的开口部的比率对应地调整第1金属膜5的厚度t1与第2金属膜7的厚度t2之间的比率。第1金属膜5的厚度t1以及第2金属膜7的厚度t2具有t1＞t2的关系。由此，能够控制由于第1金属膜5以及第2金属膜7的厚度的差而产生的应力，调整翘曲的方向以及翘曲量。
综上所述，实施方式1中的半导体装置的制造方法是，在半导体基板1的一个主面，通过将第1导电膜进行堆积、图案化，从而形成第1电极2，在第1电极2之上，形成与第1电极2所具有的图案对应的第1金属膜5，在半导体基板1的另一个主面，通过将第2导电膜进行堆积，从而形成第2电极6，在第2电极6之上，形成比第1金属膜5薄的第2金属膜7，分别在第1金属膜5之上以及第2金属膜7之上通过非电解镀而一起形成第3金属膜8。
根据以上的实施方式1中的半导体装置的制造方法，在第1金属膜5和第2金属膜7通过蒸镀法或者溅射法而成膜的情况下，使第1金属膜5的厚度t1以及第2金属膜7的厚度t2的绝对值精度良好地得到控制。即，根据实施方式1中的半导体装置的制造方法，能够高精度地控制t1＞t2的关系。另外，由于第3金属膜8通过非电解镀法而成膜，因此能够容易地形成比第1金属膜5以及第2金属膜7更厚的金属膜。另外，通过非电解镀法而成膜的第3金属膜8的膜厚的均匀性高。并且，该第3金属膜8在半导体基板1的表面1a以及背面1b一起形成。由此，在半导体基板1的表面1a之上，一边维持精度良好地得到了控制的t1＞t2的关系，一边形成由第1金属膜5和第3金属膜8构成的焊料接合用的厚金属膜，另外，同时，在背面1b之上，形成由第2金属膜7和第3金属膜8构成的焊料接合用的厚金属膜。其结果，得到第1电极2与外部电极(未图示)之间的接合部以及第2电极6与外部电极之间的接合部的可靠性提高的半导体装置。另外，能够在第1金属膜5与外部电极的接合之前所进行的热处理工序中，改善半导体装置的翘曲，抑制组装不良的发生。另外，非电解镀法与蒸镀法或者溅射法相比具有能够以低成本堆积厚金属膜的优点。
仅通过镀敷工艺难以使各面的焊料接合用金属膜形成厚度差。该差虽然也能够通过表面1a的第1电极2的面积而进行调整，但那样的调整方法使半导体装置的设计的自由度受到限制。实施方式1中的制造方法能够在使用镀敷技术的同时还容易地使表面1a侧的焊料接合用金属膜(第1金属膜5以及第3金属膜8)与背面1b侧的焊料接合用金属膜(第2金属膜7以及第3金属膜8)具有厚度差，能够控制翘曲。另外，在第1电极2是Al电极的情况下，为了在第1电极2之上通过镀敷而形成Ni的金属膜，需要锌酸盐处理等预处理。但是，在实施方式的半导体装置的制造方法中，第3金属膜8在第1金属膜5之上通过镀敷而形成。因此，能够省略锌酸盐处理等预处理。如以上所示，实施方式1中的半导体装置的制造方法提高了生产率。
＜实施方式2＞
对实施方式2中的半导体装置以及半导体装置的制造方法进行说明。此外，省略对与实施方式1相同的结构以及动作的说明。
图4是表示实施方式2中的半导体装置的结构的剖面图。保护膜4设置为不仅覆盖第1电极2的端部2a以及第3电极3的端部3a，而且还覆盖第1金属膜5的端部5a。
图5是表示实施方式2中的半导体装置的制造方法的流程图。
步骤S10与实施方式1相同。
在步骤S20中，在第1电极2之上，形成与第1电极2所具有的图案对应的第1金属膜5，在第3电极3之上，形成与第3电极3所具有的图案对应的第1金属膜5。
在步骤S32中，在半导体基板1的表面1a即一个主面，形成将第1电极2、第3电极3以及第1金属膜5各自所具有的图案的端部2a、端部3a以及端部5a覆盖的保护膜4。
步骤S40至步骤S60与实施方式1相同。
(效果)
如以上所示，在实施方式2的半导体装置的制造方法中，在形成第1电极2以及第1金属膜5之后，在半导体基板1的一个主面，形成将第1电极2以及第1金属膜5各自所具有的图案的端部覆盖的保护膜4。
通过这样的制造方法，将第1金属膜5的端部5a由保护膜4进行覆盖。因此，第3金属膜8在实施方式1中覆盖至第1金属膜5的端部5a而形成，与此相对，在实施方式2中仅形成至保护膜4的开口端。通过将第1金属膜5的端部5a由保护膜4覆盖，从而在第1金属膜5的表面形成被焊料接合的区域和不被焊料接合的区域。被焊料接合的区域处的第1金属膜5以及第3金属膜8的总厚度，确保了即使在热循环环境下第1金属膜5以及第3金属膜8也不会消失的程度的厚度。另一方面，不被焊料接合的区域在热循环环境下抑制在第1电极2处产生裂纹。其结果，半导体装置的可靠性提高。另外，在第1金属膜5是包含Ni的金属的情况下，该硬的Ni膜对半导体元件进行保护。另外，包含Ni的第1金属膜5的端部5a被保护膜4按压，从而半导体装置的可靠性提高。
＜实施方式3＞
对实施方式3中的半导体装置以及半导体装置的制造方法进行说明。此外，省略对与实施方式1或者2相同的结构以及动作的说明。
图6是表示实施方式3中的半导体装置的结构的剖面图。在实施方式3中，在第3电极3之上未形成第1金属膜5以及第3金属膜8。
图7是表示实施方式3中的半导体装置的制造方法的流程图。
步骤S10与实施方式1相同。
在步骤S22中，将第3电极3之上除外，在第1电极2之上形成与第1电极2所具有的图案对应的第1金属膜5。
在步骤S32中，在半导体基板1的表面1a即一个主面，形成将第1电极2以及第1金属膜5各自所具有的图案的端部2a以及端部5a覆盖的保护膜4。此时，保护膜4还覆盖第3电极3所具有的图案的端部3a而形成。
步骤S40至步骤S60与实施方式1相同。在第3电极3之上，未形成第1金属膜5，因而也未形成第3金属膜8。
(效果)
如以上所示，在实施方式3的半导体装置的制造方法中，在形成第1电极2时，在半导体基板1的一个主面，通过将第1导电膜进行图案化，从而进一步形成与第1电极2分离设置的第3电极3，在形成第1金属膜5时，将第3电极3之上除外而形成第1金属膜5。
向第3电极3，为了施加对半导体元件的通断动作进行控制的电压信号，作为外部电极而连接导线。第1电极2露出，因此与设置有第1金属膜5以及第3金属膜8的半导体装置的组装性相比，得到良好的组装性。
＜实施方式4＞
对实施方式4中的半导体装置以及半导体装置的制造方法进行说明。此外，省略对与实施方式1至3中任一者相同的结构以及动作的说明。
图8是表示实施方式4中的半导体装置的制造方法的流程图。此外，实施方式4中的半导体装置的制造方法是将对实施方式2的半导体装置的制造方法进行变形而得到者作为一个例子而示出的，但也可以是对实施方式1或者实施方式3的半导体装置的制造方法相同地进行变形而得到的。
步骤S10以及步骤S20与实施方式2相同。
在步骤S24中，在第1金属膜5之上形成防止第1金属膜5的表面的氧化的第1防氧化膜。第1防氧化膜是例如通过蒸镀法或者溅射法而堆积的。第1防氧化膜例如包含Au或者Ti等。第1防氧化膜的厚度是10nm至2μm左右。优选以上的步骤S24在步骤S20之后连续地执行。
步骤S32至步骤S50与实施方式2相同。
在步骤S52中，在第2金属膜7之上形成防止第2金属膜7的表面的氧化的第2防氧化膜。图9是表示实施方式4中的进行步骤S52之后的半导体装置的构造的剖面图。如图9所示，第1防氧化膜9以及第2防氧化膜10分别形成在第1金属膜5之上以及第2金属膜7之上。第2防氧化膜10例如通过蒸镀法或者溅射法而堆积。第2防氧化膜10例如包含Au或者Ti等。第2防氧化膜10的厚度是10nm至2μm左右。优选以上的步骤S52在步骤S50之后连续地执行。
在步骤S54中，去除第1防氧化膜9以及第2防氧化膜10。图10是表示实施方式4中的进行步骤S54之后的半导体装置的构造的剖面图。优选将第1防氧化膜9以及第2防氧化膜10在紧接着进行的步骤S60之前，即，在形成第3金属膜8之前去除。
步骤S60与实施方式2相同。图11是表示实施方式4中的进行步骤S60之后的半导体装置的构造的剖面图。
(效果)
如以上所示，在实施方式4的半导体装置的制造方法中，在形成第1金属膜5之后，接着在第1金属膜5之上，形成防止第1金属膜5的表面的氧化的第1防氧化膜9，在形成第2金属膜7之后，接着在第2金属膜7之上，形成防止第2金属膜7的表面的氧化的第2防氧化膜10，在通过非电解镀而一起形成第3金属膜8之前，将第1防氧化膜9和第2防氧化膜10去除。
通过上述的制造方法，能够防止第1金属膜5以及第2金属膜7的表面被氧化。第1防氧化膜9在例如第1金属膜5包含Ni的情况下，防止在第1防氧化膜9的表面形成去除性低的氧化Ni膜，使得之后接下来进行的镀敷处理变得容易。第2防氧化膜10也取得同样的效果。其结果，半导体装置的制造成本降低，制造波动也降低。
在上述的各实施方式中，示出了第1金属膜5、第2金属膜7以及第3金属膜8与外部电极进行焊料接合的例子。但是，接合对象物以及接合方法不限于此。例如，各金属膜也可以与导线进行直接接合。或者例如，即使在取代焊料而通过Ag进行接合的情况下，各实施方式中的半导体装置取得相同的效果。
另外，在上述的半导体装置的制造方法中，示出了第1金属膜5以及第2金属膜7是Ni膜的例子，但也可以分别是Cu膜。另外，示出了第1电极2以及第2电极6是包含Al的电极的例子，但也可以是包含Si或者Cu的电极。另外，第3金属膜8也可以是在NiP膜的表面包含Au膜的结构。无论哪种情况，均取得与上述相同的效果。
此外，本发明能够在本发明的范围内对各实施方式自由地进行组合，对各实施方式适当地进行变形、省略。对于本发明进行了详细说明，但上述说明在所有方面均为例示，本发明不限定于此。可以理解为在不脱离本发明的范围的情况下能够想到未例示出的无数的变形例。

Claims (5)

1.一种半导体装置的制造方法，其中，
在半导体基板的一个主面，通过将第1导电膜堆积、图案化，从而形成第1电极，
在所述第1电极之上，形成与所述第1电极所具有的图案对应的第1金属膜，
在所述半导体基板的所述一个主面形成保护膜，该保护膜将所述第1电极的所述图案的端部覆盖，并且包含使所述第1电极的一部分和所述第1金属膜的至少一部分露出的开口部，
在所述半导体基板的另一个主面，通过将第2导电膜堆积，从而形成第2电极，
在所述第2电极之上形成比所述第1金属膜薄的第2金属膜，
分别在所述开口部内的所述第1金属膜之上以及所述第2金属膜之上通过非电解镀而一起形成第3金属膜，
所述第1金属膜和所述第2金属膜以与所述保护膜的所述开口部的比率对应地规定的各自的厚度形成，以降低形成所述第3金属膜后的所述半导体基板的翘曲。
2.根据权利要求1所述的半导体装置的制造方法，其中，
在形成所述第1电极以及所述第1金属膜之后，在所述半导体基板的所述一个主面，以对所述第1电极的所述图案的所述端部和所述第1金属膜所具有的图案的端部这两者进行覆盖的方式形成所述保护膜。
3.根据权利要求1或2所述的半导体装置的制造方法，其中，
在形成所述第1电极时，在所述半导体基板的所述一个主面，通过将所述第1导电膜进行图案化，从而进一步形成与所述第1电极分离设置的第3电极，
在形成所述第1金属膜时，所述第1金属膜是将所述第3电极之上除外而形成的，
所述半导体基板包含半导体元件，该半导体元件包含所述第1电极、所述第2电极以及所述第3电极，
所述第3电极是被施加用于对所述半导体元件的通断动作进行控制的电压信号的电极。
4.根据权利要求1或2所述的半导体装置的制造方法，其中，
在形成所述第1金属膜之后，在所述第1金属膜之上，形成防止所述第1金属膜的表面的氧化的第1防氧化膜，
在形成所述第2金属膜之后，在所述第2金属膜之上，形成防止所述第2金属膜的表面的氧化的第2防氧化膜，
在通过所述非电解镀而一起形成所述第3金属膜之前，将所述第1防氧化膜和所述第2防氧化膜去除。
5.根据权利要求3所述的半导体装置的制造方法，其中，
在形成所述第1金属膜之后，在所述第1金属膜之上，形成防止所述第1金属膜的表面的氧化的第1防氧化膜，
在形成所述第2金属膜之后，在所述第2金属膜之上，形成防止所述第2金属膜的表面的氧化的第2防氧化膜，
在通过所述非电解镀而一起形成所述第3金属膜之前，将所述第1防氧化膜和所述第2防氧化膜去除。
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