JP2017228583A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2017228583A JP2017228583A JP2016121955A JP2016121955A JP2017228583A JP 2017228583 A JP2017228583 A JP 2017228583A JP 2016121955 A JP2016121955 A JP 2016121955A JP 2016121955 A JP2016121955 A JP 2016121955A JP 2017228583 A JP2017228583 A JP 2017228583A
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- Prior art keywords
- metal layer
- cover film
- insulating film
- metal
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 201
- 239000002184 metal Substances 0.000 claims abstract description 201
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- 229910052802 copper Inorganic materials 0.000 claims abstract description 6
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 6
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 6
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 5
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- 239000010408 film Substances 0.000 claims description 68
- 229910000679 solder Inorganic materials 0.000 claims description 35
- 239000000758 substrate Substances 0.000 description 10
- 239000010949 copper Substances 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
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- 150000001875 compounds Chemical class 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
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- 238000000926 separation method Methods 0.000 description 1
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
(2)前記カバー膜および前記第2金属層を覆う被覆金属層を設ける工程と、前記被覆金属層に半田を形成する工程と、を有することが好ましい。被覆金属層により、半田の第2金属層への拡散を抑制することができる。
(3)前記第1金属層は、絶縁膜に設けられた開口部の内側および上面に設けられ、前記第2金属層は、前記開口部の内部を充填して設けられることが好ましい。これにより第2金属層の密着性が向上する。
(4)前記カバー膜は、前記半導体層の平面方向に10μm以上、50μm以下の幅と前記半導体層の厚み方向に1μm以上、4μm以下の厚さを有することが好ましい。これにより第2金属層の密着性が向上する。
図1は実施例1に係る半導体装置100を例示する平面図である。図1に示すように、半導体装置100は基板10の表面に設けられた複数のパッド20を有するBGAタイプの半導体装置である。複数のパッド20は基板10の一面においてグリッド状に配列されている。
次に半導体装置100の製造方法について説明する。図3Aから図3Eは半導体装置100の製造方法を例示する断面図である。
11 半導体層
12、14、16、18、19 絶縁膜
19a、40a 開口部
20、20A、20R、50 パッド
21 半田ボール
22、24、26、28、32 金属層
30 カバー膜
40 フォトレジスト
100 半導体装置
Claims (4)
- 第1金属層を形成する工程と、
前記第1金属層の外周の領域にCu、Ti、Al、MgおよびCrの何れかよりなるカバー膜を形成する工程と、
前記カバー膜を形成する工程の後、前記第1金属層をシードメタルとして、前記カバー膜を構成する材料とは異なり、かつNi、PdまたはAlから選択された金属の無電解メッキ処理を行うことで、前記第1金属層の上面に位置し、かつ前記カバー膜の外側には延設しない第2金属層を形成する工程と、を具備する半導体装置の製造方法。 - 前記カバー膜および前記第2金属層を覆う被覆金属層を設ける工程と、前記被覆金属層に半田を形成する工程と、を有する請求項1に記載の半導体装置の製造方法。
- 前記第1金属層は、絶縁膜に設けられた開口部の内側および上面に設けられ、前記第2金属層は、前記開口部の内部を充填して設けられる、請求項1に記載の半導体装置の製造方法。
- 前記カバー膜は、前記半導体層の平面方向に10μm以上、50μm以下の幅と前記半導体層の厚み方向に1μm以上、4μm以下の厚さを有する請求項1に記載の半導体装置の製造方法。
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JP2020047775A (ja) * | 2018-09-19 | 2020-03-26 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法および半導体装置 |
JP2020141054A (ja) * | 2019-02-28 | 2020-09-03 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法及び半導体装置 |
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JP2020047775A (ja) * | 2018-09-19 | 2020-03-26 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法および半導体装置 |
JP2020141054A (ja) * | 2019-02-28 | 2020-09-03 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法及び半導体装置 |
US11270967B2 (en) | 2019-02-28 | 2022-03-08 | Sumitomo Electric Device Innovations, Inc. | Method for manufacturing semiconductor device and semiconductor device |
JP7176169B2 (ja) | 2019-02-28 | 2022-11-22 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法及び半導体装置 |
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