JP7468828B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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JP7468828B2
JP7468828B2 JP2020083020A JP2020083020A JP7468828B2 JP 7468828 B2 JP7468828 B2 JP 7468828B2 JP 2020083020 A JP2020083020 A JP 2020083020A JP 2020083020 A JP2020083020 A JP 2020083020A JP 7468828 B2 JP7468828 B2 JP 7468828B2
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metal layer
solder
resin film
forming
film
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JP2021180205A (ja
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慶太 松田
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Priority to JP2020083020A priority Critical patent/JP7468828B2/ja
Priority to US17/237,776 priority patent/US11594507B2/en
Priority to CN202110441202.XA priority patent/CN113643993A/zh
Priority to TW110115517A priority patent/TW202205458A/zh
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Description

本開示は半導体装置の製造方法に関するものである。
半導体装置を基板などにフリップチップ実装するため、ボールグリッドアレイ（Ｂａｌｌ Ｇｒｉｄ Ａｒｒａｙ：ＢＧＡ）のパッケージが用いられることがある。こうした半導体装置の上には半田ボールが形成される。例えば特許文献１には、補強層を含む複数の金属膜で形成された電極の上に半田バンプを有する半導体装置が記載されている。
半田の配線層への拡散を抑制するため、配線層の上に金属層（アンダーバンプメタル、ＵＢＭ：Ｕｎｄｅｒ Ｂｕｍｐ Ｍｅｔａｌ）を設け、その上に半田ボールを設けることがある。また、水分などから半導体層を保護するため、半導体層の上に例えばポリイミドなどで形成された絶縁膜を設ける。
特開２００６－１２０８０３号公報
金属層の熱膨張係数は絶縁膜の熱膨張係数とは異なるため、半田ボールを設ける際の温度変化に起因して、金属層と絶縁膜との密着性が低下する。金属層と絶縁膜との間に隙間が生じることがある。この隙間に半田が回り込み、配線層に到達することがある。半田が配線層とマイグレーションを起こし、半導体装置の信頼性が低下する。そこで、半田の回り込みを抑制することが可能な半導体装置の製造方法を提供することを目的とする。
本開示に係る半導体装置の製造方法は、第１金属層の上に熱硬化性の樹脂膜を形成する工程と、前記樹脂膜に開口部を形成する工程と、前記樹脂膜の開口部から露出する前記第１金属層の上面から、前記樹脂膜の上面まで第２金属層を形成する工程と、前記第２金属層を形成する工程の後、前記樹脂膜が硬化する温度以上の温度で熱処理する工程と、前記熱処理する工程の後に、前記樹脂膜の上面および前記第２金属層の側面を覆うカバー膜を形成する工程と、前記カバー膜を形成する工程の後に、前記カバー膜の開口部から露出する前記第２金属層の上面に、半田を形成する工程と、を有する。
本開示によれば半田の回り込みを抑制することが可能である。
図１Ａは実施形態に係る半導体装置を例示する平面図である。 図１Ｂは図１Ａの線Ａ－Ａに沿った断面図である。 図２Ａは半導体装置の製造方法を例示する断面図である。 図２Ｂは半導体装置の製造方法を例示する断面図である。 図２Ｃは半導体装置の製造方法を例示する断面図である。 図２Ｄは半導体装置の製造方法を例示する断面図である。 図３Ａは半導体装置の製造方法を例示する断面図である。 図３Ｂは半導体装置の製造方法を例示する断面図である。 図３Ｃは半導体装置の製造方法を例示する断面図である。 図４は比較例に係る半導体装置の製造方法を例示する断面図である。
[本開示の実施形態の説明]
最初に本開示の実施形態の内容を列記して説明する。
本開示の一形態は、（１）第１金属層の上に熱硬化性の樹脂膜を形成する工程と、前記樹脂膜に開口部を形成する工程と、前記樹脂膜の開口部から露出する前記第１金属層の上面から、前記樹脂膜の上面まで第２金属層を形成する工程と、前記第２金属層を形成する工程の後、前記樹脂膜が硬化する温度以上の温度で熱処理する工程と、前記熱処理する工程の後に、前記樹脂膜の上面および前記第２金属層の側面を覆うカバー膜を形成する工程と、前記カバー膜を形成する工程の後に、前記カバー膜の開口部から露出する前記第２金属層の上面に、半田を形成する工程と、を有する半導体装置の製造方法である。熱処理によって第２金属層と樹脂膜との間に隙間が生じる。カバー膜が隙間をふさぐことで、半田を形成する工程において、半田の回り込みを抑制することができる。
（２）前記樹脂膜はポリイミド膜でもよい。熱処理によって樹脂膜が収縮し、第２金属層との間に隙間が形成される。カバー膜が隙間をふさぐことで、半田の回り込みを抑制することができる。
（３）前記第２金属層を形成する工程は、前記樹脂膜の開口部から露出する前記第１金属層の上面から前記樹脂膜の上面まで第３金属層を形成する工程と、前記第３金属層の上面から前記樹脂膜の上面のうち前記第３金属層の外側の部分まで第４金属層を形成する工程と、を含んでもよい。第２金属層は、第３金属層および第４金属層を含み、半田の第１金属層への拡散を抑制するバリアとして機能する。
（４）前記第１金属層は金を含み、前記第３金属層はパラジウムを含み、前記第４金属層を形成する工程は、無電解メッキ処理により、ニッケルを含む前記第４金属層を形成する工程でもよい。第２金属層は、第３金属層および第４金属層を含み、半田の第１金属層への拡散を抑制するバリアとして機能する。熱処理によって第４金属層に応力がかかり、樹脂膜との密着性が低下する。カバー膜によって半田の回り込みを抑制することができる。
（５）前記カバー膜の半田への濡れ性は、前記第２金属層の濡れ性よりも低くてもよい。半田の回り込みを効果的に抑制することができる。
（６）前記カバー膜を形成する工程は、前記樹脂膜の上面から前記第２金属層の上面までを覆う前記カバー膜を形成する工程でもよい。カバー膜がはがれにくくなり、半田の回り込みを効果的に抑制することができる。
（７）前記熱処理する工程における温度は半田の融点以上でもよい。半田を形成する工程の前に、半田の融点以上の温度で熱処理を行うことで、あらかじめ第２金属層と樹脂膜との間に隙間を形成する。半田ボールを形成する工程においてカバー膜に応力がかかりにくくなる。カバー膜が隙間をふさぐことで、半田の回り込みを抑制することができる。
［本開示の実施形態の詳細］
本開示の実施形態に係る半導体装置の製造方法の具体例を、以下に図面を参照しつつ説明する。なお、本開示はこれらの例示に限定されるものではなく、特許請求の範囲によって示され、特許請求の範囲と均等の意味および範囲内でのすべての変更が含まれることが意図される。
（半導体装置）
図１Ａは実施形態に係る半導体装置１００を例示する平面図である。図１Ａに示すように、半導体装置１００は基板１０の表面に設けられた複数の半田ボール２２を有するＢＧＡタイプの半導体装置である。複数の半田ボール２２は基板１０の１つの面にグリッド状に配列され、半導体装置１００と外部機器との電気的な接続に用いられるパッドである。
図１Ｂは図１Ａの線Ａ－Ａに沿った断面図である。図１Ｂに示すように、半導体装置１００は基板１０、半導体層１２、絶縁膜１３、樹脂膜１６、配線層１４（第１金属層）、ＵＢＭ１９（第２金属層）、カバー膜２０および半田ボール２２を備える。
基板１０は例えば炭化シリコン（ＳｉＣ）またはサファイアなど絶縁体で形成された絶縁基板である。半導体層１２は基板１０の上面に設けられている。半導体層１２は、例えば窒化ガリウム（ＧａＮ）のチャネル層、窒化アルミニウムガリウム（ＡｌＧａＮ）の電子供給層などを含み、電界効果トランジスタ（Ｆｉｅｌｄ Ｅｆｆｅｃｔ Ｔｒａｎｓｉｓｔｏｒ：ＦＥＴ）が形成されている。
絶縁膜１３は、例えば厚さ０．１～０．５μｍの窒化シリコン（ＳｉＮ）などの無機絶縁体、またはポリイミドなどの有機絶縁膜であり、半導体層１２の上面を覆うパッシベーション膜である。
配線層１４は絶縁膜１３の上面に設けられ、例えば金（Ａｕ）などの金属で形成されている。絶縁膜１３は不図示の開口部を有し、配線層１４は当該開口部を通じて半導体層１２と電気的に接続される。
樹脂膜１６は絶縁膜１３の上面に設けられ、例えば厚さ５μｍのポリイミドまたはベンゾシクロブテン（ＢＣＢ）など、熱硬化性樹脂で形成された層間膜である。樹脂膜１６は配線層１４の上に開口部１６ａを有する。
ＵＢＭ１９は下地層１７（第３金属層）とメッキ層１８（第４金属層）とを有する。下地層１７は例えば厚さ１５ｎｍであり、チタン（Ｔｉ）層とパラジウム（Ｐｄ）層との積層体である。下地層１７は、開口部１６ａから露出する配線層１４の上面、開口部１６ａの内壁および樹脂膜１６の上面のうち開口部１６ａ付近の部分に設けられている。メッキ層１８は例えば無電解メッキ処理で形成され、厚さ３．５ｎｍのニッケル－リン（Ｎｉ－Ｐ）などで形成され、下地層１７の上面および側面、樹脂膜１６の上面に設けられている。ＵＢＭ１９の下面と樹脂膜１６の上面との間には隙間１５が生じている。
カバー膜２０は、樹脂膜１６の上面、ＵＢＭ１９の側面、およびＵＢＭ１９の上面の周縁部を覆う。カバー膜２０はＵＢＭ１９および隙間１５を囲み、隙間１５をふさいでいる。カバー膜２０は例えば亜鉛（Ｚｎ）、クロム（Ｃｒ）、ニッケルクロム合金（Ｎｉ／Ｃｒ）、チタン（Ｔｉ）、モリブデン（Ｍｏ）、アルミニウム（Ａｌ）、鉄（Ｆｅ）などの金属、およびこれら金属の酸化物などで形成されてもよいし、ＳｉＮまたはＳｉＯ２などの絶縁体、ポリイミドなどの樹脂で形成されてもよい。カバー膜２０の厚さＴ１は隙間１５をふさぐことができる程度であればよい。ポリイミドのカバー膜２０の厚さＴ１は例えば５μｍである。金属または絶縁体のカバー膜２０の厚さＴ１は例えば１．５μｍである。ポリイミドのカバー膜２０は複数のＵＢＭ１９の間を覆い、カバー膜２０のうち樹脂膜１６と接する部分の幅Ｗ１は例えば２００μｍである。金属または絶縁体のカバー膜２０の幅Ｗ１は例えば１．５μｍである。カバー膜２０のうちメッキ層１８と接する部分の幅Ｗ２は例えば１．５μｍである。カバー膜２０は開口部２０ａを有する。
半田ボール２２は、例えば錫および金の合金（Ｓｎ－Ａｕ）、錫および銀の合金（Ｓｎ－Ａｇ）、錫、銀および銅の合金（Ｓｎ－Ａｇ－Ｃｕ）などの金属により形成されている。半田ボール２２は、カバー膜２０の開口部２０ａから露出するＵＢＭ１９のメッキ層１８の上面に接触している。
（製造方法）
図２Ａから図３Ｃは半導体装置１００の製造方法を例示する断面図であり、図１Ｂに対応する断面を図示している。図２Ａの工程の前に、例えば有機金属化学気相成長法（ＭＯＣＶＤ：Ｍｅｔａｌ Ｏｒｇａｎｉｃ Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ）などにより、基板１０の上面に半導体層１２をエピタキシャル成長する。例えば化学気相成長（Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ：ＣＶＤ）法などにより、半導体層１２の上面に、ＳｉＮの絶縁膜１３を形成する。
図２Ａに示すように、電解メッキ処理などにより、絶縁膜１３の上面に配線層１４を形成する。図２Ｂに示すように、絶縁膜１３の上面に樹脂膜１６を形成する。図２Ｃに示すように、樹脂膜１６の上面に感光性のフォトレジストを設け、レジストパターニングを行い、レジストマスク２４を設ける。レジストマスク２４を用いて樹脂膜１６をエッチングすることで、樹脂膜１６に開口部１６ａを形成する。開口部１６ａからは配線層１４が露出する。エッチングの後、レジストマスク２４は除去する。
図２Ｄに示すように、真空蒸着およびリフトオフにより、下地層１７を配線層１４の上面から、樹脂膜１６の上面のうち開口部１６ａ付近の部分まで形成する。図３Ａに示すように、例えば下地層１７をシードメタルとして用いる無電解メッキ処理により、メッキ層１８を形成する。メッキ層１８は下地層１７の上面から、樹脂膜１６の上面のうち下地層１７の外側の部分まで設けられる。下地層１７およびメッキ層１８は、樹脂膜１６の上面に接触する。
メッキ層１８の形成後、例えば３０分間、温度を３５０℃に保つことで熱処理を行う。樹脂膜１６は例えばポリイミドなど熱硬化性の樹脂であるため、熱処理により収縮する。メッキ層１８には応力がかかり、ＵＢＭ１９と樹脂膜１６との密着性が低下する。この結果、図３Ｂに示すように、ＵＢＭ１９と樹脂膜１６との間に隙間１５が生じる。
図３Ｃに示すように、熱処理後、真空蒸着・リフトオフ、またはメッキ処理などにより、カバー膜２０を形成する。カバー膜２０は、樹脂膜１６の上面からメッキ層１８の上面のうち外周部までを覆い、隙間１５をふさぐ。カバー膜２０の開口部２０ａからは、メッキ層１８の上面が露出する。
カバー膜２０を設けた後、開口部２０ａから露出するメッキ層１８の上面にフラックスを塗布する。メッキ層１８の上面に半田ペーストを配置し、例えば２６０℃など半田の融点以上の温度まで昇温し、リフロー処理を行う。リフロー処理により、メッキ層１８の上に半田ボール２２を形成する。以上の工程で半導体装置１００を形成する。
（比較例）
図４は比較例に係る半導体装置の製造方法を例示する断面図である。図２Ａから図３Ａまでの工程は比較例でも行われる。比較例においては、ＵＢＭ１９の形成後、熱処理およびカバー膜２０の形成を行わずに、リフロー処理を行う。図４に示すように、半田ボール２２が形成される。リフロー処理では、温度を半田の融点以上である２６０℃まで高める。ＵＢＭ１９と樹脂膜１６との熱膨張係数の違いによって、ＵＢＭ１９のメッキ層１８に応力がかかる。応力によって、メッキ層１８と樹脂膜１６との間に隙間２６が生じる。このためメッキ層１８の半田に対するバリアとしての機能が低下する。
図４に矢印で示すように、溶融した半田の一部は、隙間２６に回り込み、例えば下地層１７を通じて配線層１４に拡散する。また、例えば下地層１７と樹脂膜１６との界面から配線層１４まで侵入する。半田が配線層１４のＡｕと反応し、マイグレーションが発生する。この結果、半導体装置の寿命が短くなってしまう。
これに対し、本実施形態によれば、配線層１４の上面および樹脂膜１６の上面までＵＢＭ１９を設けた後、熱処理を行う。樹脂膜１６がポリイミドなどの熱硬化性樹脂であるため、熱処理により収縮し、樹脂膜１６とＵＢＭ１９との間にあらかじめ隙間１５を形成することができる。熱処理の後、ＵＢＭ１９の側面を覆うカバー膜２０を設け、半田ボール２２を形成する。熱処理で生じた隙間１５をカバー膜２０でふさぐことにより、半田の隙間１５への回り込みを抑制することができる。この結果、半田と配線層１４とのマイグレーションも抑制することができる。半導体装置１００の寿命の劣化が抑制される。
熱処理によって樹脂膜１６とＵＢＭ１９との間にあらかじめ隙間１５を形成する。リフロー処理において昇温した際に、カバー膜２０に応力が加わることを抑制し、カバー膜２０の剥離、損傷などを抑制することができる。樹脂膜１６は、例えばポリイミドなどの樹脂で形成され、水分などから半導体装置１００を保護する保護膜である。
ＵＢＭ１９は、半田の配線層１４への拡散を抑制するバリアとして機能する。例えばＵＢＭ１９は、順に積層された下地層１７およびメッキ層１８を含む。半田へのバリア性を高めるため、下地層１７はＰｄを含み、メッキ層１８はＮｉを含むことが好ましい。メッキ層１８は例えば無電解メッキ処理で形成されるＮｉ－Ｐｄ膜であり、蒸着で形成する金属層に比べて緻密で、バリアとして高い性能を有する。
その一方で、メッキ層１８は樹脂膜１６の上面に接触しており、かつメッキ層１８の熱膨張係数は樹脂膜１６の熱膨張係数とは異なる。したがって温度変化によってメッキ層１８に応力がかかる。無電解Ｎｉ－Ｐメッキ層であるメッキ層１８に大きな応力が発生し、ポリイミドの樹脂膜１６との密着性が低下しやすい。実施形態によれば、カバー膜２０によってメッキ層１８の側面を覆うため、半田の回り込みを抑制することができる。下地層１７はＰｄ以外に例えばＣｕなどの金属で形成されてもよい。メッキ層１８はＮｉ以外に例えばニッケルおよび金の積層構造（Ｎｉ／Ａｕ）、ニッケルおよび銀の積層構造（Ｎｉ／Ａｇ）などの金属で形成されている。また、メッキ層１８に代えて、スパッタリングで積層したＴｉ／ＮｉＶ／Ａｇの層を用いてもよい。
リフロー処理の前にメッキ層１８の表面にフラックスを塗布し、表面の酸化膜を除去することで、半田濡れ性を高めることが好ましい。メッキ層１８の表面に、例えばＡｕなどＮｉよりも半田濡れ性の高い金属の膜を設けることで、半田濡れ性を向上することができる。しかし、メッキ層１８とＵＢＭ１９との界面の半田濡れ性が高くなり、半田が侵入する恐れがある。メッキ層１８をＮｉなど半田濡れ性の低い金属とし、メッキ層１８の表面にフラックスを塗ることで、半田濡れ性の向上と、半田の侵入の抑制を両立することができる。なお、ここでの濡れ性とは、半田の搭載面と半田表面とが交わる領域の角度（接触角）の大小で評価することができる。角度が大きいほど濡れ性が低く、角度が小さいほど濡れ性が高いと判断する。
半田の融点は例えば２５０℃以下であり、リフロー処理における温度は融点以上の２６０℃とする。熱処理における温度は半田の融点以上である。熱処理において、例えば、２０分以上４０分以下の時間にわたって温度を３００℃以上、４００℃以下とする。温度は３５０℃以上、４００℃以下でもよい。熱処理でリフロー処理の温度以上の温度まで昇温することで、ＵＢＭ１９と樹脂膜１６との間にあらかじめ隙間１５を形成することができる。カバー膜２０で隙間１５をふさぎ、半田の回り込みを抑制することができる。熱処理により既にＵＢＭ１９の一部が樹脂膜１６からはがれているため、リフロー処理において剥離が発生しにくい。したがってリフロー処理においてカバー膜２０に応力がかかりにくくなる。
カバー膜２０と樹脂膜１６との密着性は、ＵＢＭ１９と樹脂膜１６との密着性より高いことが好ましい。カバー膜２０の半田濡れ性は例えばＵＢＭ１９よりも低いことが好ましい。例えば、カバー膜２０は例えばＺｎ、Ｃｒ、Ｔｉ、Ｍｏ、ＡｌおよびＦｅで形成されているか、これらの金属の少なくとも１つを含む合金などで形成されている。半田がカバー膜２０の表面に広がりにくく、半田の回り込み、および複数の半田ボール２２間のショートを抑制することができる。電気信号の損失を抑制するため、カバー膜２０の電気抵抗は、例えばＵＢＭ１９、配線層１４および半田ボールより高いことが好ましい。
カバー膜２０は、樹脂膜１６の上面、ＵＢＭ１９の側面および上面を覆う。カバー膜２０がＵＢＭ１９の上面に乗り上げているため、カバー膜２０がはがれにくくなり、半田の回り込みを効果的に抑制することができる。カバー膜２０はＵＢＭ１９を完全に囲むことが好ましい。
半導体装置１００のパッドの配置は図１ＡのようなＢＧＡでもよいし、ＢＧＡ以外でもよい。基板１０はＳｉＣ、シリコン（Ｓｉ）、サファイア、ＧａＮなどの絶縁体で形成される。半導体層１２は、例えば窒化物半導体または砒素系半導体などで形成された化合物半導体層である。窒化物半導体とは、窒素（Ｎ）を含む半導体であり、例えばＧａＮ、ＡｌＧａＮ、窒化インジウムガリウム（ＩｎＧａＮ）、窒化インジウム（ＩｎＮ）、および窒化アルミニウムインジウムガリウム（ＡｌＩｎＧａＮ）などがある。砒素系半導体とはガリウム砒素（ＧａＡｓ）など砒素（Ａｓ）を含む半導体である。半導体層１２にはＦＥＴ以外の半導体素子が形成されてもよい。
以上、本開示の実施形態について詳述したが、本開示は係る特定の実施形態に限定されるものではなく、特許請求の範囲に記載された本開示の要旨の範囲内において、種々の変形・変更が可能である。
１０ 基板
１２ 半導体層
１３ 絶縁膜
１４ 配線層
１５、２６ 隙間
１６ 樹脂膜
１６ａ 開口部
１７ 下地層
１８ メッキ層
１９ ＵＢＭ
２０ カバー膜
２２ 半田ボール
２４ レジストマスク
１００ 半導体装置

Claims (7)

  1. 第１金属層の上に熱硬化性の樹脂膜を形成する工程と、
    前記樹脂膜に開口部を形成する工程と、
    前記樹脂膜の開口部から露出する前記第１金属層の上面から、前記樹脂膜の上面まで第２金属層を形成する工程と、
    前記第２金属層を形成する工程の後、前記樹脂膜が硬化する温度以上の温度で熱処理する工程と、
    前記熱処理する工程の後に、少なくとも前記樹脂膜の上面から前記第２金属層の側面までを覆うカバー膜を形成する工程と、
    前記カバー膜を形成する工程の後に、前記カバー膜の開口部から露出する前記第２金属層の上面に、半田を形成する工程と、を有する半導体装置の製造方法。
  2. 前記樹脂膜はポリイミド膜である請求項１に記載の半導体装置の製造方法。
  3. 前記第２金属層は第３金属層と第４金属層とを含み、
    前記第２金属層を形成する工程は、前記樹脂膜の開口部から露出する前記第１金属層の上面から前記樹脂膜の上面まで前記第３金属層を形成する工程と、
    前記第３金属層の上面から前記樹脂膜の上面のうち前記第３金属層の外側の部分まで前記第４金属層を形成する工程と、を含み、
    前記カバー膜の前記半田への濡れ性は、前記第４金属層の表面の前記半田への濡れ性よりも低い請求項１または請求項２に記載の半導体装置の製造方法。
  4. 前記第１金属層は金を含み、
    前記第３金属層はパラジウムを含み、
    前記第４金属層を形成する工程は、無電解メッキ処理により、ニッケルを含む前記第４金属層を形成する工程である請求項３に記載の半導体装置の製造方法。
  5. 前記カバー膜の前記半田への濡れ性は、前記第２金属層の表面の前記半田への濡れ性よりも低い請求項１から請求項４のいずれか一項に記載の半導体装置の製造方法。
  6. 前記カバー膜を形成する工程は、前記樹脂膜の上面から前記第２金属層の上面のうち外周部までを覆う前記カバー膜を形成する工程であり、
    前記カバー膜を形成する工程の後であって前記半田を形成する前において、前記第２金属層の上面の一部は、前記カバー膜から露出する請求項１から請求項５のいずれか一項に記載の半導体装置の製造方法。
  7. 前記熱処理する工程における温度は前記半田の融点以上である請求項１から請求項６のいずれか一項に記載の半導体装置の製造方法。
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