CN109478532B - 在外延反应器中处理半导体晶片的设备和制备具有外延层的半导体晶片的方法 - Google Patents

在外延反应器中处理半导体晶片的设备和制备具有外延层的半导体晶片的方法 Download PDF

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CN109478532B
CN109478532B CN201780043117.XA CN201780043117A CN109478532B CN 109478532 B CN109478532 B CN 109478532B CN 201780043117 A CN201780043117 A CN 201780043117A CN 109478532 B CN109478532 B CN 109478532B
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P·莫斯
H·黑希特
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Abstract

在外延反应器中处理半导体晶片的设备和制备具有外延层的半导体晶片的方法。所述设备包括：基座；引导穿过基座的纵向洞；晶片提升轴；引导穿过纵向洞的晶片提升销；基座承载轴；基座承载臂；基座支承销；被锚定在基座承载臂中的引导袖；及引导元件，其突出于引导袖并且在上端具有有晶片提升销插入其中的孔，并且能够借助晶片提升轴连同晶片提升销一起升高和降低。

Description

在外延反应器中处理半导体晶片的设备和制备具有外延层的 半导体晶片的方法
技术领域
本发明涉及在外延反应器中处理半导体晶片的设备。本发明此外还涉及制备具有外延层的半导体晶片的方法，其中使用所述设备。
背景技术
在外延反应器中，经常在单晶片反应器中，通常借助CVD(化学气相沉积)在半导体晶片上沉积外延层。
US 2014/0 251 208A1和US 2010/0 086 784A1包含此外延反应器的细节的描述。处理半导体晶片的一个主要部分包括在沉积外延层之前将半导体晶片放置在基座上，及在沉积外延层之后由基座升起具有外延层的半导体晶片。为此使用的设备除了基座以外还包括晶片提升轴和晶片提升销、基座承载轴、基座承载臂和基座支承销。
晶片提升轴在上端具有悬臂梁，其朝侧向延伸并在晶片提升销下方结束。在降低和升高晶片提升轴期间，晶片提升销和任选放置在该销上的半导体晶片或具有外延层的半导体晶片也一起降低和升高。晶片提升销在此情况下被推送穿过位于基座承载轴的基座承载臂中的洞，以及穿过基座中的贯穿孔。所述设备的缺点是，其使用容易产生颗粒，而颗粒会污染半导体晶片朝着基座的背面。颗粒是由于在晶片提升销与基座承载臂中的洞的内表面和基座中的贯穿孔的内表面之间的摩擦作为磨损料形成的。摩擦还特别是由于所述设备必须保持能够在宽的温度范围内发挥作用，并且需要考虑在高温下的热膨胀。晶片提升销还容易相对于竖直位置发生倾斜。在此情况下，形成额外的颗粒。
由此问题提出本发明的目的。
发明内容
本发明的目的是通过在外延反应器中处理半导体晶片的设备实现的，其包括：
基座；
引导穿过基座的纵向洞；
晶片提升轴；
引导穿过纵向洞的晶片提升销；
基座承载轴；
基座承载臂；
基座支承销；
被锚定在基座承载臂中的引导袖；及
引导元件，其突出于引导袖并且在上端具有有晶片提升销插入其中的孔，并且能够借助晶片提升轴连同晶片提升销一起升高和降低。
所述目的此外还通过制备具有外延层的半导体晶片的方法实现，其包括：
在外延反应器中提供根据本发明的设备；
将半导体晶片放置在晶片提升销上；
通过降低晶片提升销将半导体晶片放置在基座上；
在半导体晶片上沉积外延层；
通过升高晶片提升销，由基座升起所产生的具有外延层的半导体晶片；及
从外延反应器取出具有外延层的半导体晶片。
通过使用所建议的设备抑制了在将半导体晶片降低在基座上及将具有外延层的半导体晶片由基座升起的过程中颗粒的形成，特别是避免了半导体晶片的背面或具有外延层的半导体晶片的背面被颗粒污染。此外，所述设备由于其构造方式使其诸如偏心率(Rundlauf)、径向游隙(Schlag)和竖直游隙
Figure BDA0001942330270000021
的性质最小化。
所述设备尤其是以如下方式构造，以沿直线引导穿过基座中的纵向洞的方式移动晶片提升销。与运行温度无关地，抑制由于摩擦形成颗粒的情形。
至少三个基座承载臂优选通过固定在基座承载轴的上端的一体式元件形成。特别优选为由石英制成的星形元件，其用螺丝固定在基座承载轴上。但是星形元件也可以是多部分的，并且具有安装例如用螺丝固定在基座承载轴上的由石英制成的支柱。
引导袖被锚定，优选用螺丝固定在基座承载臂中，因而其可以在需要时容易地加以更换。引导袖优选具有经磨光的内表面，并且优选由石英组成。内表面的平均粗糙度Ra优选为不大于0.4μm。引导袖和在引导袖中在两端突出于引导袖的引导元件各自形成直线滑动轴承，其确保沿直线引导晶片提升销移动。棒形引导元件由与引导袖相同的材料组成，并且具有平均粗糙度Ra同样优选为不大于0.4μm的外表面。因此在引导袖与引导元件之间几乎不发生任何摩擦，因而也几乎不形成任何颗粒，即便有也仅在相对于基座和位于其上的半导体晶片具有足够距离的位置处，从而排除了半导体晶片的背面被颗粒污染的情形。引导袖和引导元件和纵向洞的布置方式尤其是避免在升高和降低晶片提升销期间在半导体晶片的直接附近产生颗粒。此外，晶片提升销也不可能相对于竖直位置发生非故意倾斜。
优选在上端具有T形截面的晶片提升销插入引导元件的孔中，引导元件在上端具有该孔。晶片提升销和引导元件的孔优选以如下方式确定尺寸，使得晶片提升销在其在室温下插入引导元件的孔中时位于中心。根据一个优选的构造方式，晶片提升销由具有与引导元件不同的热膨胀的不同材料制成，优选由碳化硅制成。在此情况下，晶片提升销和引导元件的制造公差此外以如下方式确定大小，使得在沉积外延层期间所设定的温度下晶片提升销与引导元件以夹紧方式相连接。优选在大于900℃的温度下产生夹紧连接。由于夹紧连接，晶片提升销不具有径向游隙，这有助于抑制颗粒的形成。
这一构造方式还确保，晶片提升销和基座中的纵向洞至少在室温至沉积温度的温度范围内总是保持齐平对齐。此外，这确保晶片提升销的T形末端可以同步地放置在基座上，并且由基座升起。
为了移动晶片提升销，升高或降低晶片提升轴和支承在晶片提升轴的悬臂梁的外端上的引导元件。
此外，直立元件以高度可调节的方式固定，优选用螺丝固定至基座承载臂的外端。直立元件的上端具有轴向孔，基座支承销插入该孔中，它的头优选是球形圆的。在基座的背面上具有有伸长的底面的盲洞，用于接收基座支承销的球形圆头。盲洞的长度和宽度在盲洞的开口的方向上增大。盲洞对于基座支承销优选形成具有棱柱形轮廓的支架(Auflage)。这一构造方式允许基座低摩擦径向移动，特别是通过基座材料的热膨胀引起的自动向中心移动(selbstzentrierende Bewegung)。
基座优选具有板形截面，并且包括构造成凸缘的环形支承面以及基座底部。半导体晶片在边缘区域中以背面支承在环形支承面上，并且相对于基座底部具有短的距离。基座可以构造成一体式，或者由环和平坦的基座底部形成，其中该环支承在平坦的基座底部上。纵向洞和盲洞布置在基座底部中。
关于根据本发明的方法的前述实施方案所述的特征可以相应地应用于根据本发明的设备。反过来，关于根据本发明的设备的前述实施方案所述的特征可以相应地应用于根据本发明的方法。根据本发明的实施方案的这些及其他特征在附图的说明中及在权利要求中加以解释说明。单独的特征可以分离地或者以组合方式作为本发明的实施方案加以实现。此外，可以描述可以独立地保护的有利的实施方案。
附图说明
图1是穿过具有根据本发明的特征的设备的截面图。
图2、图3和图4在放大图中显示了根据图1的设备的单独的特征。
附图标记
1 基座(Suszeptor)
2 晶片提升轴(Scheiben-Hebewelle)
3 晶片提升销(Scheiben-Hebestift)
4 基座承载轴(Suszeptor-Tragwelle)
5 基座承载臂(Suszeptor-Tragarm)
6 基座支承销(Suszeptor-Stützstift)
7 引导袖(Führungshülse)
8 引导元件(Führungselement)
9 直立元件(Steherelement)
10 球形圆头(
Figure BDA0001942330270000051
abgerundeter Kopf)
11 纵向洞(Langloch)
12 盲洞(Sackloch)
具体实施方式
根据本发明的实施例的详细说明
根据图1的设备包括基座承载轴4和晶片提升轴2。基座承载臂5以相等的距离彼此组合形成用螺丝固定在基座承载轴4的上端的一体式星形元件。晶片提升轴2包括沿径向向上伸出的悬臂梁，在其末端设置平台以支承引导元件8。引导元件8被推送穿过被锚定在基座承载臂5中的引导袖7。引导元件8的上端具有孔，晶片提升销3插入该孔中。晶片提升销3延伸穿过基座1中的纵向洞11。基座1在背面上具有有伸长的底面的盲洞12，并且在此处支承在基座支承销6的球形圆头10上。基座支承销6在直立元件9的上端插入轴向孔中。直立元件9在基座承载臂5上在其外端以高度可调节的方式固定。
图2在放大图中显示了引导元件8的具有在此处设置的孔的上端以及插入该孔中的晶片提升销3的下端。该区域在图1中用圆圈和字母A标记。
图3在放大图中显示了被锚定在基座承载臂5中的引导袖7以及被推送穿过引导袖7并且在下端支承在晶片提升轴2的悬臂梁的平台上的引导元件8的一部分。该区域在图1中用圆圈和字母B标记。
图4在放大图中显示了基座支承销6的上端以及在基座1的背面上伸入盲洞12中的基座支承销的球形圆头10。该区域在图1中用圆圈和字母C标记。
示例性实施方案的以上描述应当理解为举例说明。由此公开的内容一方面使本领域技术人员理解本发明和与此相关的优点，另一方面包括在本领域技术人员的理解范围内所述的结构和方法的显而易见的改变和修改。因此，所有这些改变和修改以及等价物应当被权利要求的保护范围所覆盖。

Claims (6)

1.在外延反应器中处理半导体晶片的设备，其包括：
基座；
引导穿过基座的纵向洞；
晶片提升轴；
引导穿过纵向洞的晶片提升销；
基座承载轴；
基座承载臂；
基座支承销；
被锚定在基座承载臂中的引导袖；及
引导元件，所述引导元件突出于所述引导袖并且在上端具有孔，所述晶片提升销插入所述孔中，并且所述引导元件能够借助所述晶片提升轴连同所述晶片提升销一起升高和降低，其中所述引导元件和所述晶片提升销具有不同的热膨胀，并且以通过如下方式确定大小的公差制造，使得在大于900℃的温度下在所述引导元件与所述晶片提升销之间产生夹紧连接。
2.根据权利要求1的设备，其中所述基座承载臂形成用螺丝固定在所述基座承载轴的上端的一体式星形元件。
3.根据权利要求1或2的设备，其包括直立元件，所述直立元件与所述基座承载臂在其外端以高度可调节的方式相连接，并且所述直立元件具有轴向孔，所述基座支承销插入所述轴向孔中，其中所述基座支承销具有球形圆头。
4.根据权利要求3的设备，其在所述基座的背面上具有伸长的盲洞以接收所述基座支承销的球形圆头，其中所述盲洞的长度和宽度在盲洞的开口的方向上增大。
5.制备具有外延层的半导体晶片的方法，其包括：
在外延反应器中提供根据权利要求1至4之一的设备；
将半导体晶片放置在晶片提升销上；
通过降低所述晶片提升销将所述半导体晶片放置在所述基座上；
在所述半导体晶片上沉积外延层；
通过升高所述晶片提升销，由所述基座升起所产生的具有外延层的半导体晶片；及
从所述外延反应器取出所述具有外延层的半导体晶片。
6.根据权利要求5的方法，其包括在单晶硅半导体晶片上沉积硅外延层。
CN201780043117.XA 2016-07-13 2017-07-03 在外延反应器中处理半导体晶片的设备和制备具有外延层的半导体晶片的方法 Active CN109478532B (zh)

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