CN109313397B - 层叠体的制造方法、半导体元件的制造方法及层叠体 - Google Patents
层叠体的制造方法、半导体元件的制造方法及层叠体 Download PDFInfo
- Publication number
- CN109313397B CN109313397B CN201780032974.XA CN201780032974A CN109313397B CN 109313397 B CN109313397 B CN 109313397B CN 201780032974 A CN201780032974 A CN 201780032974A CN 109313397 B CN109313397 B CN 109313397B
- Authority
- CN
- China
- Prior art keywords
- resin composition
- photosensitive resin
- group
- metal layer
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/073—Apertured devices mounted on one or more rods passed through the apertures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Laminated Bodies (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Physical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016111113 | 2016-06-02 | ||
JP2016-111113 | 2016-06-02 | ||
PCT/JP2017/020249 WO2017209176A1 (ja) | 2016-06-02 | 2017-05-31 | 積層体の製造方法、半導体素子の製造方法および積層体 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109313397A CN109313397A (zh) | 2019-02-05 |
CN109313397B true CN109313397B (zh) | 2023-04-11 |
Family
ID=60478680
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201780032974.XA Active CN109313397B (zh) | 2016-06-02 | 2017-05-31 | 层叠体的制造方法、半导体元件的制造方法及层叠体 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6845848B2 (ja) |
KR (1) | KR102147108B1 (ja) |
CN (1) | CN109313397B (ja) |
TW (1) | TWI736629B (ja) |
WO (1) | WO2017209176A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11848249B2 (en) | 2019-09-26 | 2023-12-19 | Fujifilm Corporation | Manufacturing method for thermal conductive layer, manufacturing method for laminate, and manufacturing method for semiconductor device |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7169844B2 (ja) * | 2017-12-15 | 2022-11-11 | 旭化成株式会社 | 感光性樹脂組成物、硬化レリーフパターンの製造方法、及び半導体装置 |
JP7187883B2 (ja) * | 2018-08-09 | 2022-12-13 | 大日本印刷株式会社 | 蒸着マスクの製造方法 |
JP7137631B2 (ja) * | 2018-10-19 | 2022-09-14 | 富士フイルム株式会社 | 硬化膜の製造方法、樹脂組成物、硬化膜、積層体の製造方法および半導体デバイスの製造方法 |
SG11202105555VA (en) * | 2018-12-05 | 2021-06-29 | Fujifilm Corp | Pattern forming method, photosensitive resin composition, cured film, laminate, and device |
CN110571156B (zh) * | 2019-08-01 | 2021-05-04 | 广东芯华微电子技术有限公司 | 一种板级扇出型封装精细线路制作方法 |
KR20230047157A (ko) * | 2020-09-24 | 2023-04-06 | 후지필름 가부시키가이샤 | 복합 패턴의 제조 방법, 수지 조성물, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법 |
TW202307090A (zh) * | 2021-05-17 | 2023-02-16 | 日商富士軟片股份有限公司 | 含聚醯亞胺部形成用組成物、接合體之製造方法、接合體、器件之製造方法及器件 |
WO2023120037A1 (ja) * | 2021-12-23 | 2023-06-29 | 富士フイルム株式会社 | 接合体の製造方法、接合体、積層体の製造方法、積層体、デバイスの製造方法、及び、デバイス、並びに、ポリイミド含有前駆体部形成用組成物 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000343031A (ja) * | 1999-06-08 | 2000-12-12 | Toray Ind Inc | 樹脂の塗布方法 |
US20060292383A1 (en) * | 2003-11-26 | 2006-12-28 | Shuichi Kohayashi | Metal-coated substrate and manufacturing method of the same |
JP2008307737A (ja) * | 2007-06-13 | 2008-12-25 | Mitsui Chemicals Inc | 積層体、配線板及びその製造方法 |
CN102043332A (zh) * | 2009-10-14 | 2011-05-04 | 日东电工株式会社 | 感光性树脂组合物和带金属支撑体的电路基板及其制造方法 |
CN103057240A (zh) * | 2011-10-21 | 2013-04-24 | 住友化学株式会社 | 制造层压板的方法以及层压板 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000026722A (ja) * | 1998-07-13 | 2000-01-25 | Hitachi Ltd | ポリイミド前駆体を含む樹脂組成物とポジ型感光性樹脂組成物およびそれを用いた電子装置とそのパターン形成方法 |
DE10011604A1 (de) * | 2000-03-10 | 2001-10-04 | Infineon Technologies Ag | Polybenzoxazol-Vorstufen |
JP4434563B2 (ja) * | 2002-09-12 | 2010-03-17 | パイオニア株式会社 | 有機el表示装置の製造方法 |
JP2008222937A (ja) * | 2007-03-14 | 2008-09-25 | Jsr Corp | 重合体及びそれを用いた感光性樹脂組成物 |
JP5251211B2 (ja) * | 2008-03-31 | 2013-07-31 | 大日本印刷株式会社 | 感光性樹脂組成物、及びパターン形成方法 |
JP2010008603A (ja) * | 2008-06-25 | 2010-01-14 | Jsr Corp | 配線隔壁形成用感放射線性樹脂組成物ならびに配線隔壁およびその形成方法 |
KR101010036B1 (ko) * | 2009-08-28 | 2011-01-21 | 주식회사 엘지화학 | 신규한 폴리아믹산, 이를 포함하는 감광성 수지 조성물 및 이로부터 제조된 드라이 필름 |
JPWO2011034092A1 (ja) | 2009-09-18 | 2013-02-14 | 株式会社アルバック | バリアメタル膜の形成方法 |
CN103097420B (zh) * | 2010-09-02 | 2016-06-22 | 默克专利股份有限公司 | 用于电子器件的夹层 |
JP2015207284A (ja) * | 2014-04-10 | 2015-11-19 | 富士フイルム株式会社 | パターン形成方法、硬化物、タッチパネル又はディスプレイパネルの製造方法、及び、表示装置 |
-
2017
- 2017-05-31 WO PCT/JP2017/020249 patent/WO2017209176A1/ja active Application Filing
- 2017-05-31 CN CN201780032974.XA patent/CN109313397B/zh active Active
- 2017-05-31 KR KR1020187034311A patent/KR102147108B1/ko active IP Right Grant
- 2017-05-31 JP JP2018520955A patent/JP6845848B2/ja active Active
- 2017-06-01 TW TW106118059A patent/TWI736629B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000343031A (ja) * | 1999-06-08 | 2000-12-12 | Toray Ind Inc | 樹脂の塗布方法 |
US20060292383A1 (en) * | 2003-11-26 | 2006-12-28 | Shuichi Kohayashi | Metal-coated substrate and manufacturing method of the same |
JP2008307737A (ja) * | 2007-06-13 | 2008-12-25 | Mitsui Chemicals Inc | 積層体、配線板及びその製造方法 |
CN102043332A (zh) * | 2009-10-14 | 2011-05-04 | 日东电工株式会社 | 感光性树脂组合物和带金属支撑体的电路基板及其制造方法 |
CN103057240A (zh) * | 2011-10-21 | 2013-04-24 | 住友化学株式会社 | 制造层压板的方法以及层压板 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11848249B2 (en) | 2019-09-26 | 2023-12-19 | Fujifilm Corporation | Manufacturing method for thermal conductive layer, manufacturing method for laminate, and manufacturing method for semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JP6845848B2 (ja) | 2021-03-24 |
KR102147108B1 (ko) | 2020-08-25 |
KR20180135070A (ko) | 2018-12-19 |
CN109313397A (zh) | 2019-02-05 |
TWI736629B (zh) | 2021-08-21 |
TW201835226A (zh) | 2018-10-01 |
WO2017209176A1 (ja) | 2017-12-07 |
JPWO2017209176A1 (ja) | 2019-05-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN109313397B (zh) | 层叠体的制造方法、半导体元件的制造方法及层叠体 | |
JP6813602B2 (ja) | 感光性樹脂組成物、複素環含有ポリマー前駆体、硬化膜、積層体、硬化膜の製造方法、および半導体デバイス | |
JP6650517B2 (ja) | 硬化膜の製造方法、積層体の製造方法および半導体素子の製造方法 | |
WO2018025738A1 (ja) | 感光性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、積層体の製造方法および半導体デバイス | |
WO2017146152A1 (ja) | 積層体、積層体の製造方法、半導体デバイス、および、半導体デバイスの製造方法 | |
JP6751159B2 (ja) | 感光性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、積層体の製造方法および半導体デバイス | |
CN110692018B (zh) | 感光性树脂组合物、聚合物前体、固化膜、层叠体、固化膜的制造方法及半导体器件 | |
JP6704047B2 (ja) | パターン製造方法、半導体装置の製造方法および積層体 | |
TWI733882B (zh) | 積層體的製造方法及電子元件的製造方法 | |
TW201840436A (zh) | 膜的製造方法、積層體的製造方法及電子元件的製造方法 | |
CN108700836B (zh) | 层叠体的制造方法及半导体器件的制造方法 | |
WO2019013240A1 (ja) | 熱硬化性樹脂組成物、およびその硬化膜、積層体、半導体デバイス、ならびにそれらの製造方法 | |
JP2023003421A (ja) | 硬化膜の製造方法、樹脂組成物、硬化膜、積層体の製造方法および半導体デバイスの製造方法 | |
WO2023190064A1 (ja) | 樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、及び、半導体デバイス | |
JP7196121B2 (ja) | パターン形成方法、感光性樹脂組成物、積層体の製造方法、及び、電子デバイスの製造方法 | |
WO2020080217A1 (ja) | 樹脂組成物、硬化膜、積層体、硬化膜の製造方法、および半導体デバイス | |
TWI803717B (zh) | 感光性樹脂組成物、圖案形成方法、硬化膜、積層體及器件 | |
CN112639615A (zh) | 感光性树脂组合物、固化膜、层叠体、固化膜的制造方法、半导体元件及热产碱剂 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |