CN109216377B - 显示设备及其制作方法 - Google Patents
显示设备及其制作方法 Download PDFInfo
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- CN109216377B CN109216377B CN201810564664.9A CN201810564664A CN109216377B CN 109216377 B CN109216377 B CN 109216377B CN 201810564664 A CN201810564664 A CN 201810564664A CN 109216377 B CN109216377 B CN 109216377B
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- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 238000005452 bending Methods 0.000 claims abstract description 51
- 238000000926 separation method Methods 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 19
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 239000002096 quantum dot Substances 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000002459 sustained effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1233—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different thicknesses of the active layer in different devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/179—Interconnections, e.g. wiring lines or terminals
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/877—Arrangements for extracting light from the devices comprising scattering means
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Abstract
本发明公开了一种显示设备及其制作方法,其中,显示设备包括基板,基板具有可弯折的第一区域以及相邻于可弯折的第一区域的第二区域,其中弯折轴重迭于可弯折的第一区域。显示设备还包括第一晶体管,第一晶体管重迭于可弯折的第一区域,并具有第一通道区,第一通道区在垂直于弯折轴的第一方向上具有第一尺寸。显示设备还包括第二晶体管,第二晶体管重迭于第二区域,并具有第二通道区,第二通道区在第一方向上具有第二尺寸,其中第一尺寸小于第二尺寸。
Description
技术领域
本发明涉及一种显示设备及其制作方法,特别是一种具有可降低弯折时毁损可能性的可弯折的显示设备。
背景技术
可弯折的显示设备在折叠状态下可提供便携性,而当处于非折叠状态时可展开成相对大尺寸的显示器。可弯折的显示设备可在电视、显示屏幕、移动式计算装置等电子显示器中具有多方面的应用,而移动式计算装置包括但不限于智能型手机、平板计算机、移动式个人计算机(PCs)和电子书阅读器,并且,可弯折的显示设备(或可挠式显示设备)还可应用于穿戴装置,例如智能型手表。但显示设备在弯折时可能会造成毁损而影响显示质量,因此提高可弯折的显示设备在弯折处的可靠度是很重要的。
发明内容
依据本文所述的各式实施例,所描述的示例性显示设备在弯折时具有降低的毁损可能性,而此显示设备的实施适用于提高显示设备的便携性及/或耐用度。
示例性显示设备的一实施例包括基板,基板具有可弯折的第一区域以及相邻于可弯折的第一区域的第二区域,其中弯折轴重迭于可弯折的第一区域。显示设备还包括第一晶体管,第一晶体管重迭于可弯折的第一区域,并具有第一通道区,第一通道区在垂直于弯折轴的第一方向上具有第一尺寸。显示设备还包括第二晶体管,第二晶体管重迭于第二区域,并具有第二通道区,第二通道区在第一方向上具有第二尺寸,其中第一尺寸小于第二尺寸。
显示设备的制作方法的另一实施例包括将多个第一晶体管配置于重迭基板的可弯折的第一区域,其中弯折轴重迭于可弯折的第一区域,且各第一晶体管具有第一通道区,各第一通道区在垂直于弯折轴的第一方向上具有第一尺寸。制作方法还包括将多个第二晶体管配置于重迭基板中相邻于可弯折的第一区域的第二区域,其中各第二晶体管具有第二通道区,各第二通道区在第一方向上具有第二尺寸,其中第一尺寸小于第二尺寸。
示例性显示设备的另一实施例包括基板,基板具有可弯折的第一区域以及相邻于可弯折的第一区域的第二区域,其中弯折轴重迭于可弯折的第一区域。显示设备还包括重迭于基板的显示结构、重迭于可弯折的第一区域的多个第一晶体管以及重迭于第二区域的多个第二晶体管。显示结构在重迭于可弯折的第一区域的部分具有第一厚度,显示结构在重迭于第二区域的部分具有第二厚度,且第一厚度小于第二厚度。
附图说明
为了能够详细了解本发明的上述特征与简要结论,可通过参考实施例以获得更具体的描述,而其中一些实施例绘示于附图中。然而,要注意的是,附图仅示出了示例性实施例,因此附图并不限制本发明的范围,而本发明可允许其他等效的实施例。
图1依据本文所述实施例绘示显示设备的示例性弯折轴。
图2为依据本文所述实施例所绘示具有不同区域的示例性显示设备示意图。
图3A到图3D依据本文所述实施例绘示显示设备的示例性弯折。
图4为依据本文所述实施例所绘示的显示驱动电路的示例性配置的电路示意图。
图5为依据本文所述实施例所绘示的具有不同尺寸的通道区的示例性显示设备的示意图。
图6A与图6B依据本文所述实施例绘示通道区相对于弯折轴的不同型态。
图7A与图7B依据本文所述实施例绘示示例性偏轴(off-axis)通道区。
图8A、图8B与图9为依据本文所述实施例所绘示的通道区及/或显示单元的示例性配置的示意图。
图10依据本文所述实施例绘示具有不同厚度的基板。
图11为依据本文所述实施例所绘示结合不同尺寸的通道区与不同基板厚度的示意图。
图12为依据本文所述实施例所绘示结合不同尺寸的显示单元与不同基板厚度的示意图。
图13与图14依据本文所述实施例绘示具有不同厚度的显示结构。
图15依据本文所述实施例绘示可弯折的显示设备的示例性制作方法。
为了便于理解,在可能的情况下使用相同的附图标记来指示图中共有的相同组件,而可以预期的是,在一个实施例中所发明的组件可不须特定叙述而将其利用于其他实施例。除非特别说明,否则本文的附图不应被理解为按比例绘制,并且,为了清楚的表达与解释,附图通常被简化且省略了细节或组件,而本文附图与详述用于解释下文所讨论的原理,并以相似的标号表示相同的组件。
附图标记说明:100-显示设备;105-基板;105a-下表面;110-集成电路;115-主动区;120、120-1、120-2-弯折轴;125-区域;200、300~315、500、1000~1400-示意图;205-显示结构;210、210-1、210-2-可弯折的第一区域;215、215-1、215-2、215-3-第二区域;400-电路示意图;405-开关晶体管;410-驱动晶体管;415-重置晶体管;420-储存电容;425-发光组件;505-显示单元层;510-电路层;515-封装子层;520-阻障子层;525-发光子层;530-半导体子层;535-通道区;535-1-第一通道区;535-2-第二通道区;540-缓冲子层;545-显示单元;550-1-第一晶体管;550-2-第二晶体管;555-1-第一像素电极;555-2-第二像素电极;600、605、700、710-型态;705、705-1、705-2-定界框;800A、800B、900-配置;1405-绝缘子层;1500-方法;1505、1515、1525、1535-方块;A1-第一面积;A2-第二面积;B1-第一尺寸;B1-1、B1-2、X1、X2-尺寸;B2-第二尺寸;D1-第一方向;Ds1-第一距离;Ds2-第二距离;Data-数据信号;Drain-漏极端;Gate-栅极端;L1-长度;S1-第一间隔距离;S2-第二间隔距离;Scan-第一控制信号;Source-源极端;T1、T3-第一厚度;T2、T4-第二厚度;Vdd-第一供应电压;Vref-参考电压讯号;Vss-第二供应电压;W1、W2-宽度。
具体实施方式
以下参照图式说明本发明的实施方式,以明确阐释前述和其他技术内容、特征、和功效。藉由特定实施例的说明,本领域的技术人员可进一步明了本发明采取的技术手段和功效,以达成前述发明目的。另,本说明书所发明的技术可为本领域的技术人员理解并且实施,在不悖离本发明概念的前提下,任何实质相同的变更或改良均可被权利要求所涵盖。
此外,本说明书和权利要求所提及的序数,例如「第一」、「第二」等,仅用于说明主张的组件;而非意指、或表示主张的组件具有任何执行次序,亦非于一主张的组件和另一主张的组件之间的次序、或制成方法的步骤次序。该些序数的使用仅用来使具有某命名的一请求组件得以和另一具有相同命名的请求组件能作出清楚区分。
此外,本说明书和权利要求所提及的位置,例如「之上」、「上」、或「上方」,可指直接与另一基板或膜接触,或可指非直接与另一基板或膜接触。
此外,本说明书和权利要求所提及的耦接,可为两组件直接电性连接、两组件之间包含电容、或是两组件通过其他至少一个组件而电性连接。
在本发明中,任两个用来比较的数值或方向,可存在着一定的误差。若第一值等于第二值,其隐含着第一值与第二值之间可存在着约10%的误差;若第一方向垂直于第二方向,则第一方向与第二方向之间的角度可介于80度至100度之间;若第一方向平行于第二方向,则第一方向与第二方向之间的角度可介于0度至10度之间。
另外,本发明中不同实施例的技术特征可相互结合,以形成另一实施例。
图1依据本文所述实施例绘示显示设备100的示例性弯折轴。显示设备100包括集成电路(IC)110,设置在基板105上。在本实施例中,集成电路110邻设在基板105的相对短的一侧边。在其他实施例中,集成电路110可邻设在基板105的相对长的一侧边或是任何合适的替代位置,但不以此为限。集成电路110用以控制包括于显示设备100中的显示单元的操作。在一些实施例中,基板105包括可挠式印刷电路板(图未示),且集成电路110可用于通过可挠式印刷电路板与外部处理器沟通。
显示设备100包括主动区115,主动区115以一个或多个显示单元显示图像。在一些实施例中,各显示单元对应个别的像素,且主动区115包括多个像素(M x N个像素),排列成M行(row)与N列(column)的图案,其中M与N是正整数。主动区115可包括具有任何合适的空间排列的像素(例如并非局限于行与列的排列方式),而像素数量可以任何数量替代。
在一些实施例中,各像素可根据预先定义的颜色模型而包括一个或多个子像素,颜色模型的范例包括RGB(红、绿与蓝)颜色模型、RGBW(红、绿、蓝与白)颜色模型、RGBY(红、绿、蓝与黄)颜色模型、RGBG颜色模型以及RBGB颜色模型,但也可为其他颜色模型。在一些实施例中,各像素可对应一个子像素,在其他实施例中,各像素可对应多个子像素。
各显示单元(或像素)可根据任何合适的显示技术而包括一个或多个发光组件,而显示技术不管为现在已知还是后来开发的技术。显示技术的一些非限制性的范例包括发光二极管(LEDs)、有机发光二极管(OLEDs)或量子点发光二极管(QLEDs)、微型发光二极管(micro-LEDs或mini-LEDs)或其他显示技术,但本发明并不以此为限。一些实施例中,发光二极管的芯片尺寸约为300微米(μm)到10毫米(mm),微型发光二极管(mini-LEDs)的芯片尺寸约为100微米(μm)到300微米(μm),微型发光二极管(micro-LEDs)的芯片尺寸约为1微米(μm)到100微米(μm),但本发明并不以此为限。
显示设备100可沿着一个或多个方向挠曲,并可对应于可弯曲、可弯折、可折叠、可卷曲或可拉伸的其中一个或多个的显示面板。在一些实施例中,显示设备100对应一条或多条弯折轴120-1、120(可统称为弯折轴120),可使显示设备100在重复弯曲或弯折时不对显示设备100造成明显的毁损。举例而言,基板105可包括一个或多个对应各弯折轴120的可挠或可弯折区,使得基板105的其他区域得以改变其相对配置,例如通过弯折(或以其他方式弯曲)显示设备100的可弯折区,可使显示设备100的非可弯折区可彼此相对地折叠、滑动、移动等。基板105的可挠或可弯折区可包括任何适合的材料,不论是否为已知还是后来开发的材料均可。可挠材料的一些非限制性的范例包括高分子层,例如由聚亚酰氨(polyimide)、聚萘二甲酸乙二醇酯(polyethylene naphthalate,PEN)、聚对苯二甲酸乙二醇酯(polyethylene terephthalate,PET)或其它适合的高分子材料或此些高分子材料的组合所形成的塑料薄膜。在一些实施例中,基板105的可挠性实质上均匀。在其他实施例中,基板105在一个或多个非可弯折区中相对较坚硬。在一范例中,基板105在可弯折区与非可弯折区内可包括相同的材料组成,但在非可弯折区内具有较厚的厚度,在另一范例中,基板105的可弯折区与非可弯折区可具有实质上相同的厚度并具有不同的材料组成。
如图1所示,弯折轴120-1重迭于基板105的一区域125,区域125位于集成电路110与主动区115之间,此设置可对应于集成电路110本身不可挠曲的情况。本文所讨论的“重迭”是指在俯视显示设备100、基板105、显示结构205或组件层(图2)等的状况下所看到的空间重迭(或是在基板的法线方向上所看到的空间重迭)。在具有可挠性的集成电路110的实施方式中,集成电路110的至少一部分可设置与弯折轴120重迭,但不以此为限。弯折轴120重迭于基板105的主动区115,但一般而言,各弯折轴120-1、120对于基板105可位于任何适合的位置,举例而言,弯折轴120可大致表示为主动区115的中心线,且弯折轴120实质上垂直于主动区115的尺寸X1,在一些情况下,尺寸X1对应于主动区115的长度或宽度,但不以此为限。可变换地,弯折轴120可大致表示为显示设备110的中心线,且弯折轴120以实质上垂直于显示设备110的尺寸X2显示。虽然弯折轴120-1、120被描述为实质上彼此平行,但弯折轴120-1、120也可能以其他非平行的方式配置。另外,其他合适数量的弯折轴120可实施于显示设备100中,例如一条、三条或更多的弯折轴120。本文所讨论的“实质上垂直”可指两者所夹的角度介于85度至95度之间,而本文所讨论的“实质上平行”可指两者所夹的角度介于-5度至5度之间。
图2为依据本文所述实施例所绘示具有不同区域的示例性显示设备示意图200。示意图200描绘显示结构205在俯视上重迭于基板105,显示结构205设置在基板105上。以下参照图5讨论,显示结构205可包括显示单元层505以及电路层510,显示单元层505可包括多个子层,例如封装子层515、阻障子层520以及发光子层525,电路层510可包括半导体子层530以及缓冲子层540,也还可包括除了显示结构205以外的其他膜层。
如图1与图2所示,基板105具有可弯折的第一区域210以及相邻于所述可弯折的第一区域210的第二区域215-1、215-2,可弯折的第一区域210对应弯折轴120,并设置在相邻两第二区域215-1、215-2(可统称为第二区域215)之间。在一些实施例中,第二区域215-1及/或215-2相对于可弯折的第一区域210较为坚硬,而在一些情况下,相对坚硬的第二区域215-1及/或215-2可以帮助将基板105的弯曲限制到所期望的弯折模式(例如将弯曲限制在弯折轴120周围)。在其他实施例中,基板105的可挠性可实质上均匀,使得第二区域215-1、215-2亦可挠曲或可弯折。如图2所示,弯折轴120在俯视上重迭于可弯折的第一区域210,并描绘成沿着进出纸面的方向延伸。尽管已绘示出单个可弯折的第一区域210以及两个第二区域215-1、215-2,但是各个区域数量仍有变换的可能。
图3A到图3D依据本文所述实施例绘示显示设备的示例性弯折。在示意图300中,当显示设备以弯折轴120弯曲或弯折时,显示结构205朝内。在示意图305中,显示结构205朝内至完全弯折的位置,而完全弯折为第二区域215-1相对于第二区域215-2具有180°的方向。在示意图310中,当显示设备以弯折轴120弯曲或弯折时,显示结构205朝外。
在示意图315中,显示设备包括可弯折的第一区域210-1、210-2以及第二区域215-1、215-2、215-3,弯折轴120-1重迭于可弯折的第一区域210-1,弯折轴120-2重迭于可弯折的第一区域210-2。如图所示,以弯折轴120-1所弯折的第一部分的显示结构205朝外,且以弯折轴120-2所弯折的第二部分的显示结构205朝内。
图4为依据本文所述实施例所绘示的显示驱动电路的示例性配置的电路示意图400。电路示意图400可以与本文所述的实施例结合使用,例如用以驱动图1的显示设备100的显示单元。
电路示意图400包括开关晶体管405、驱动(driving)晶体管410以及重置(reset)晶体管415,开关晶体管405用以接收与重置晶体管415共享的第一控制信号(“Scan”),而依据第一控制信号,开关晶体管405用以通过其通道传导数据信号(“Data”)。
驱动晶体管410用以接收由开关晶体管405所传递的数据信号,而依据数据信号,驱动晶体管410通过其通道以传导电流到发光组件425的输入节点,如图所示,驱动晶体管410用以耦接第一供应电压(Vdd)与输入节点。发光组件425的一些非限制性的范例包括发光二极管、微型发光二极管、有机发光二极管或量子点发光二极管。
储存电容420耦接于驱动晶体管410的控制端与输入节点之间,而储存电容420用以维持驱动晶体管410的控制端的数据信号的数值。
重置晶体管415用以接收第一控制信号,而依据第一控制信号,重置晶体管415通过其通道以传导参考电压讯号(Vref)至输入节点。
发光组件425耦接于输入节点与第二供应电压(Vss;可变换为“共同电压”或“接地”)之间,如图所示,发光组件425的阳极连接于输入节点,发光组件425的阴极连接于第二供应电压Vss。然而,其他实施方式可以使发光组件425的阳极和阴极反向连接。
图5为依据本文所述实施例所绘示的具有不同尺寸的通道区的示例性显示设备的示意图500。显示设备可以与本文所述的实施例结合使用,例如图2所示的显示设备及/或图4的电路示意图400。
示意图500包括显示结构205,重迭于基板105,虽然基板105绘示为单一组件,但基板105可包括多个组件,例如可挠式基板层、支撑膜层与支撑膜黏着剂等。
显示结构205包括重迭于电路层510的显示单元层505,显示单元层505包括定义出显示设备100的外部表面的封装子层515,封装子层515重迭于发光子层525,且发光子层525之间设置有部分的阻挡子层520,换句话说,阻障子层520形成多个开口,而发光子层525形成于此些开口中。虽然图标中未具体标记,但显示单元层505可包括位于发光子层525上侧的导电连接部(例如位于封装子层515与发光子层525之间,并可定义为阴极)与位于发光子层525下侧的导电连接部(例如位于发光子层525与电路层510之间,并可定义为阳极),换句话说,在俯视上,上侧的导电连接部(例如阴极)、发光子层525以及下侧的导电连接部(例如阳极)的重迭区域可被定义为发光组件425。
示意图500包括多个显示单元545,各显示单元545包括实施于电路层510中的晶体管以及发光组件425。虽然图标中未具体标记,电路层510可包括一个或多个电性绝缘子层以绝缘电路层510中的各式组件,举例来说,电路层510包括配置在晶体管与基板105之间的缓冲子层540。
在一些实施例中,第一晶体管550-1重迭于可弯折的第一区域210,并具有第一通道区535-1,第一通道区535-1在实质上垂直于弯折轴120的第一方向D1上具有第一尺寸B1,第二晶体管550-2重迭于第二区域215,并具有第二通道区535-2,第二通道区535-2在第一方向D1上具有第二尺寸B2,而第一尺寸B1小于第二尺寸B2。在一些实施例中,第一晶体管550-1与第二晶体管550-2分别为驱动晶体管410,但不以此为限。在其他实施例中,第一晶体管550-1及/或第二晶体管550-2为包括于显示结构205中的其他晶体管。在一些实施例中,显示结构205还包括连接于第一晶体管550-1的第一像素电极555-1以及连接于第二晶体管550-2的第二像素电极555-2。
各晶体管包括栅极端(“Gate”)、源极端(“Source”)以及漏极端(“Drain”),其中源极端(“Source”)与漏极端(“Drain”)耦接于电路层510的半导体子层530。如图所示,可弯折的第一区域210内的第一晶体管550-1的第一通道区535-1在第一方向D1上对应第一尺寸(或宽度)B1,且第一方向D1实质上垂直于弯折轴120并实质上平行于基板105。第二区域215内的第二晶体管550-2的第二通道区535-2在第一方向D1上对应第二尺寸B2。
在传统的显示设备中,设置在可弯折的第一区域210内的通道区535-1可能在弯折或弯曲显示设备的情况下特别容易受到损坏,而通道区的结构持续毁损会改变所对应的第一晶体管550-1的特性,使得影响发光组件425所发出的光线质量。
在一些实施例中,位在可弯折的第一区域210内的第一晶体管550-1的第一通道区535-1的尺寸不同于位在第二区域215内的第二晶体管550-2的第二通道区535-2的尺寸。在一些实施例中,第一尺寸B1与第二尺寸B2根据方程式(1)调控:
0.3≤(B1/B2)≤0.95 (1)
换句话说,第一尺寸B1对于第二尺寸B2的比例大于或等于0.3且小于或等于0.95。在一些实施例中,将第一通道区535-1制作为具有比第二尺寸B2更小的第一尺寸B1可降低持续毁损第一通道区535-1的可能性,藉此提高显示设备的可靠度。
图6A与图6B依据本文所述实施例绘示通道区535-1相对于弯折轴120的不同型态600、605。此些型态600、605可以与本文所述的其他实施例结合使用,例如与图5所示的显示设备结合。在形态600中,第一尺寸B1在第一方向D1(实质垂直于弯折轴120)上对应薄膜晶体管的通道区535-1的长度L1。在型态605中,第一尺寸B1对应薄膜晶体管的通道区535-1的宽度W1。
图7A与图7B依据本文所述实施例绘示示例性偏轴(off-axis)通道区535。此些形态700、710可以与本文所述的其他实施例结合使用,例如与图5所示的显示设备结合。型态700所绘示的通道区535具有“偏轴(off-axis)”的长轴,换句话说,长轴的方向既不平行弯折轴120也不平行第一方向D1。在此情况下,通道区535在第一方向D1上的范围可以定界框705绘示出,定界框705是定义通道区535的最小矩形,定界框705的矩形侧边与弯折轴120平行或垂直。通道区535的第一尺寸B1可被定为定界框705在第一方向D1的尺寸,而所定的第一尺寸B1可与方程式(1)结合使用,以确定显示设备的不同区域的通道区535的相对尺寸。
型态710所绘示晶体管中具有分散(或不连续)的通道区,包括晶体管的第一通道区535-1与晶体管的第二通道区535-2,如图所示,第一通道区535-1的尺寸B1-1(以定界框705-1垂直于弯折轴120的侧边宽度所定义)小于第二通道区535-2的尺寸B1-2(以定界框705-2垂直于弯折轴120的侧边宽度所定义)。尺寸B1-1、B1-2中的较大者可与方程式(1)结合使用(在本实施例中,尺寸B1-2用以代表晶体管的通道区的尺寸),以确定显示设备的不同区域的通道区535的相对尺寸。
另外,尽管图6A、图6B、图7A与图7B绘示了与各晶体管对应的示例性通道区,但本领域的技术人员会理解显示设备的各式晶体管的通道区不需相同,而可具有不同的尺寸及/或方向及/或形状,举例而言,于一特定区域(例如可弯折的第一区域210、第二区域215-1或第二区域215-2)内的晶体管可实质上相同或彼此不相同。另外,于一个特定区域内的晶体管可不同于另一个特定区域内的晶体管。
图8A、图8B与图9为依据本文所述实施例所绘示的通道区535及/或显示单元425的示例性配置800A、800B、900的示意图。更进一步说明,关于配置800A、800B、900所讨论的特征可应用于显示设备的实施。
如以上关于图5的讨论并如配置800A所示,在可弯折的第一区域210内的其中一个显示单元425的第一面积A1小于在第二区域215-1及/或第二区域215-2内其中一个显示单元425的第二面积A2,第一面积A1及/或第二面积A2可被定义为阻障子层520的开口的其中一个在俯视上的面积(或是在剖视上开口的其中一个位于阻障子层520的上表面处的宽度)。在一些实施例中,具有较小的第一区域A1可降低在可弯折的第一区域210内的结构持续毁损的可能性,藉此提高显示设备的可靠度。因此,在一实施例中,多个第一显示单元425与可弯折的第一区域210重迭,且多个第二显示单元425与第二区域215-1及/或第二区域215-2重迭,其中,其中一个第一显示单元425的第一面积A1小于其中一个第二显示单元425的第二面积A2。
在一些实施例中,如配置800B所示,在第一方向D1上,可弯折的第一区域210内的其中一个通道区535的第一尺寸B1可小于第二区域215-1及/或第二区域215-2内的其中一个通道区535的第二尺寸B2。在一些实施例中,第一尺寸B1与第二尺寸B2的相对比例可依据方程式(1)而调控。
在一些实施例中,如配置900所示,第一间隔距离S1可被定义在可弯折的第一区域210内的两相邻的第一晶体管的第一通道区535之间,且第二间隔距离S2可被定义在第二区域215-1、215-2内的两相邻的第二晶体管的第二通道区535之间,其中第一间隔距离S1与第二间隔距离S2被定义为两相邻的通道区之间在第一方向D1上的最短距离,而第一间隔距离S1可大于第二间隔距离S2。
因此,在一实施例中,多个第一晶体管重迭于可弯折的第一区域210,且多个第二晶体管重迭于第二区域215-1、215-2,其中两相邻的第一晶体管的第一通道区535在第一方向D1上以第一间隔距离S1彼此分隔,两相邻的第二晶体管的第二通道区535在第一方向D1上以第二间隔距离S2彼此分隔,且第一间隔距离S1大于第二间隔距离S2。
可替换地,第一间隔距离S1可被定义在可弯折的第一区域210的两相邻的显示单元425之间,且第二间隔距离S2可被定义在第二区域215-1、215-2的两相邻的显示单元425之间,其中第一间隔距离S1与第二间隔距离S2被定义为两相邻的显示单元之间在第一方向D1上的最短距离,而第一间隔距离S1可大于第二间隔距离S2。在一些实施例中,将两相邻的通道区535及/或显示单元425之间设置较大的间隔可降低在可弯折的第一区域210内的结构持续毁损的可能性,藉此提高显示设备的可靠度。因此,在一实施例中,两相邻的第一显示单元425在第一方向D1上以第一间隔距离S1彼此分隔,两相邻的第二显示单元425在第一方向D1上以第二间隔距离S2彼此分隔,其中第一间隔距离S1大于第二间隔距离S2。
另外,尽管图8A、图8B与图9绘示了与各通道区535及/或各显示单元425对应的示例性间隔距离S1、S2,但本领域的技术人员会理解显示设备的通道区535及/或显示单元425之间的各间隔距离S1不需相同或通道区535及/或显示单元425之间的各间隔距离S2不需相同,而可分别具有不同间隔距离,举例而言,于一特定区域(例如可弯折的第一区域210、第二区域215-1或第二区域215-2)内的间隔距离可实质上相同或彼此不相同。另外,于一个特定区域内的间隔距离可不同于另一个特定区域内的间隔距离。
在一些实施例中,不同的间隔距离S1、S2可以与通道区535的不同尺寸B1、B2结合使用及/或与显示单元的不同面积A1、A2结合使用。
在一些实施例中,多个第一显示单元425以第一重复图案与可弯折的第一区域210重迭(在俯视上),多个第二显示单元425以第二重复图案与第二区域215-1、215-2重迭(在俯视上),且第一重复图案可不同于第二重复图案,但不以此为限。举例而言,第一重复图案及/或第二重复图案可以是具有不同尺寸的显示单元425的矩形网格及/或在两相邻的第一显示单元425或两相邻的第二显示单元425之间具有不同间隔距离的矩形网格。在其他实施例中,第一重复图案及/或第二重复图案可为PenTile形式,但不以此为限。
在一些实施例中,可弯折的第一区域210的第一通道区535包括第一半导体材料,第二区域215-1、215-2的第二通道区535包括第二半导体材料,而第一半导体材料与第二半导体材料可相同或不同,举例来说,第一半导体材料与第二半导体材料可包括低温多晶硅(low-temperature polysilicon,LTPS)、氧化铟镓锌(indium gallium zinc oxide,IGZO)、多晶硅(polysilicon)或非晶硅(amorphous silicon)等。
在一实施例中,第一通道区535包括第一半导体材料,且第二通道区535包括不同于第一半导体材料的第二半导体材料,在一非限制性的范例中,可弯折的第一区域210中所使用的第一半导体材料包括LTPS,且第二区域215-1、215-2中所使用的第二半导体材料包括IGZO。在一些情况下,第一半导体材料可选择对可弯折的第一区域210提供较大的可挠曲性及/或对配置在可弯折的第一区域210内的晶体管提供较大的可靠度。不同的半导体材料可以与本文所述的其他特征结合使用。
图10依据本文所述实施例绘示具有不同厚度的基板。在示意图1000中,基板105在可弯折的第一区域210中具有第一厚度T1,并在第二区域215-1、215-2中具有第二厚度T2,第一厚度T1对应可弯折的第一区域210中相对平坦的地方,第二厚度T2对应第二区域215-1、215-2中相对平坦的地方,其中第一厚度T1小于第二厚度T2,且第一厚度T1与第二厚度T2在垂直于第一方向D1的一方向上量测。因此,在一实施例中,基板105在可弯折的第一区域210中具有第一厚度T1,且在第二区域215-1、215-2中具有第二厚度T2,其中第一厚度T1小于第二厚度T2(例如,在图12中,基板105的下表面105a与可弯折的第一区域210中的通道区535之间的最小距离为第一距离Ds1,基板105的下表面105a与第二区域215-1、215-2中的通道区535之间的最小距离为第二距离Ds2,其中第一距离Ds1小于第二距离Ds2)。
依据制作工艺,第一厚度T1和第二厚度T2之间的转变可为实质上直接改变或者为渐变,举例来说,基板105的非等向性蚀刻(anisotropic etching)可提供实质上垂直并由第二厚度T2延伸至第一厚度T1的侧壁。
在一些实施例中,缩减可弯折的第一区域210内的第一厚度T1可使显示设备较易于弯折,并降低可弯折的第一区域210内的结构持续毁损的可能性。不同的基板厚度T1、T2可以与本文所述的其他特征结合使用。
图11为依据本文所述实施例所绘示的结合不同尺寸的通道区与不同基板厚度的示意图1100。如图所示,可弯折的第一区域210内的通道区535的其中一个在第一方向D1上具有第一尺寸B1,且第二区域215-1、215-2内的通道区535的其中一个在第一方向D1上具有第二尺寸B2。此外,可弯折的第一区域210中的第一厚度T1小于第二区域215-1、215-2中的第二厚度T2。
在一些实施例中,尺寸B1、B2根据方程式(2)、(3)调控:
(0<(T1/T2)≤0.5)→0.2≤(B1/B2)≤0.8 (2)
(0.5<(T1/T2)<1)→0.4≤(B1/B2)≤0.95 (3)
换句话说,当第一厚度T1相对于第二厚度T2的第一比例大于0且小于或等于0.5时,第一尺寸B1相对于第二尺寸B2的第二比例大于或等于0.2且小于或等于0.8,而当第一比例大于0.5且小于1时,第二比例大于或等于0.4且小于或等于0.95。在一些实施例中,将厚度T1、T2与尺寸B1、B2根据方程式(2)、(3)调控可降低第一通道区535内的结构持续毁损的可能性,藉此提高显示设备的可靠度。
图12为依据本文所述实施例所绘示的结合不同尺寸的显示单元545与不同基板厚度的示意图1200。如图所示,可弯折的第一区域210内的显示单元545的其中一个在第一方向D1上具有宽度W1,第二区域215-1、215-2内的显示单元545的其中一个在第一方向D1上具有宽度W2,其中宽度W1为可弯折的第一区域210内的显示单元545的其中一个在第一方向D1上的最大宽度,且宽度W2为第二区域215-1、215-2内的显示单元545的其中一个在第一方向D1上的最大宽度。此外,可弯折的第一区域210中的第一厚度T1小于第二区域215-1、215-2中的第二厚度T2。
在一些实施例中,宽度W1、W2根据方程式(4)、(5)调控:
(0<(T1/T2)≤0.5)→0.3≤(W1/W2)≤0.8 (4)
(0.5<(T1/T2)<1)→0.5≤(W1/W2)≤0.95 (5)
换句话说,当第一厚度T1相对于第二厚度T2的第一比例大于0且小于或等于0.5时,宽度W1相对于宽度W2的第二比例大于或等于0.3且小于或等于0.8,而当第一比例大于0.5且小于1时,第二比例大于或等于0.5且小于或等于0.95。在一些实施例中,将厚度T1、T2与宽度W1、W2根据方程式(4)、(5)调控可降低第一通道区535内的结构持续毁损的可能性,藉此提高显示设备的可靠度。
图13与图14依据本文所述实施例绘示具有不同厚度的显示结构205。在示意图1300中,基板105具有实质上固定不变的厚度,而显示结构205重迭于基板105。在一实施例中,显示结构205在可弯折的第一区域210内的部分具有第一厚度T3,在第二区域215-1、215-2内的部分具有第二厚度T4,其中第一厚度T3对应可弯折的第一区域210中相对平坦的地方,且第二厚度T4对应第二区域215-1、215-2中相对平坦的地方,而第一厚度T3小于第二厚度T4。依据制作工艺,第一厚度T3与第二厚度T4之间的转变可为实质上直接变化或者为渐变,举例来说,显示结构205(或一个或多个组件子层)的非等向性蚀刻可提供实质上垂直并由第二厚度T4延伸至第一厚度T3的侧壁。
在一些实施例中,缩减可弯折的第一区域210内的第一厚度T3可使显示设备较易于弯折,并降低可弯折的第一区域210内的结构持续毁损的可能性。不同的显示结构205的厚度T3、T4可以与本文所述的其他特征结合使用。举例而言,厚度较小的第一厚度T3可以与降低厚度的基板105、缩小尺寸的通道区535及/或缩减大小的显示单元545结合使用。
因此,在一实施例中,显示结构205重迭于基板105,其中显示结构205具有与可弯折的第一区域210重迭的第一厚度T3以及与第二区域215-1重迭的第二厚度T4,其中第一厚度T3小于第二厚度T4。
在示意图1400中,缩小可弯折的第一区域210内的第一厚度T3可通过显示结构205的一个或多个子层实现,举例而言,封装子层515、阻障子层520及/或设置在阻障子层520下方的绝缘子层1405在可弯折的第一区域210内可具有缩小的厚度。
因此,在一实施例中,封装子层515在重迭于可弯折的第一区域210的部分具有第三厚度,并在重迭于第二区域215-1、215-2的部分具有第四厚度,其中第三厚度小于第四厚度。在另一实施例中,绝缘子层1405在重迭于可弯折的第一区域210的部分具有第三厚度,并在重迭于第二区域215-1、215-2的部分具有第四厚度,其中第三厚度小于第四厚度。
图15依据本文所述实施例绘示可弯折的显示设备的示例性制作方法1500。方法1500可以与本文所述的其他实施例结合使用,例如图5与图11所示的显示设备。方法1500可以使用本领域的技术人员已知的制作工艺来执行。
方法1500从方块1505开始,将多个第一晶体管配置于重迭基板的可弯折的第一区域,其中弯折轴重迭于可弯折的第一区域,且各第一晶体管具有第一通道区,各第一通道区在垂直于弯折轴的第一方向上具有第一尺寸,而第一方向可实质上平行于基板。
在方块1515中,将多个第二晶体管配置于重迭基板中相邻于可弯折的第一区域的第二区域,各第二晶体管具有第二通道区,各第二通道区在第一方向上具有第二尺寸,其中第一尺寸小于第二尺寸。在一些实施例中,方块1505与方块1515于不同时间进行(例如分开制作)。在其他实施例中,方块1505与方块1515的进行在时间上至少部分重迭,在另外其他实施例中,方块1505与方块1515的进行在时间上完全重迭。
在一些实施例中,在方块1525中,将多个第一显示单元配置于重迭可弯折的第一区域。在方块1535中,将多个第二显示单元配置于重迭第二区域,其中,其中一个第一显示单元的第一面积小于其中一个第二显示单元的第二面积。
在一些实施例中,多个第一显示单元以第一重复图案与可弯折的第一区域重迭,多个第二显示单元以第二重复图案与第二区域重迭。
在一实施例中,方块1525与方块1535于不同时间进行(例如分别制作)。在其他实施例中,方块1525与方块1535的进行在时间上至少部分重迭。在另外其他实施例中,方块1525与方块1535的进行在时间上完全重迭。方法1500在方块1535完成之后结束。
本实施例的显示设备可为曲状显示设备、可挠性显示设备、拼接显示设备、或可延展性显示设备;但本发明不限于此。前述本发明的任何实施例的显示设备可结合至触控面板,形成触控显示设备。进一步地,前述本发明的任何实施例的可弯折的显示设备的一些非限制性的应用范例可包括电视、显示屏幕、拼接显示器、移动式计算装置等电子装置,而移动式计算装置包括但不限于智能型手机、平板计算机、移动式个人计算机(PCs)和电子书阅读器,并且,可弯折的显示设备(或可挠式显示设备)还可应用于穿戴装置,例如智能型手表。
与本文发明的观点结合说明的各种绘示的逻辑方块、模块、电路和演算步骤可以电子硬件、计算机软件或两者的组合的形式实现。而在不背离所附权利要求的范围的情况下,可以进行各种的变化和修改。此外,除非另有明确说明,否则根据本文发明的方法权利要求中所描述的功能、步骤或动作不需要以任何特定的顺序执行。
鉴于上文所述,本发明的范围由上述的权利要求所决定。
以上所述仅为本发明的实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (12)
1.一种显示设备,其特征在于,包括:
一基板,具有一可弯折的第一区域以及相邻于所述可弯折的第一区域的一第二区域,其中一弯折轴重迭于所述可弯折的第一区域,所述基板在所述可弯折的第一区域中具有一第一厚度,且所述基板在所述第二区域中具有一第二厚度,其中所述第一厚度小于所述第二厚度,且所述第一厚度相对于所述第二厚度的比例为一第一比例;
一第一晶体管,重迭于所述可弯折的第一区域,并具有一第一通道区,所述第一通道区在垂直于所述弯折轴的一第一方向上具有一第一尺寸;
一第二晶体管,重迭于所述第二区域,并具有一第二通道区,所述第二通道区在所述第一方向上具有一第二尺寸,其中所述第一尺寸小于所述第二尺寸;以及
多个第一显示单元与多个第二显示单元,所述多个第一显示单元与所述可弯折的第一区域重迭,所述多个第二显示单元与所述第二区域重迭,所述多个第一显示单元的其中一个的一第一面积小于所述多个第二显示单元的其中一个的一第二面积,且所述多个第一显示单元的所述其中一个在所述第一方向上的宽度相对于所述多个第二显示单元的所述其中一个在所述第一方向上的宽度的比例为一第二比例;
其中所述基板的一下表面与所述第一通道区之间的最小距离为第一距离,所述基板的所述下表面与所述第二通道区之间的最小距离为第二距离,其中所述第一距离小于所述第二距离;
其中当所述第一比例大于0且小于或等于0.5时,则所述第二比例大于或等于0.3且小于或等于0.8;以及
其中当所述第一比例大于0.5且小于1时,则所述第二比例大于或等于0.5且小于或等于0.95。
2.如权利要求1所述的显示设备,其特征在于,所述第一通道区的材料包括低温多晶硅,且所述第二通道区的材料包括氧化铟镓锌。
3.如权利要求1所述的显示设备,其特征在于,还包括:
一第一像素电极,连接于所述第一晶体管;以及
一第二像素电极,连接于所述第二晶体管。
4.如权利要求3所述的显示设备,其特征在于,所述基板的所述下表面与所述第一像素电极之间的最小距离为第三距离,所述基板的所述下表面与所述第二像素电极之间的最小距离为第四距离,其中所述第三距离小于所述第四距离。
5.如权利要求1所述的显示设备,其特征在于,所述第一尺寸相对于所述第二尺寸的比例大于或等于0.3且小于或等于0.95。
6.如权利要求1所述的显示设备,其特征在于,所述显示设备包括多个所述第一晶体管以及多个所述第二晶体管,所述多个所述第一晶体管与所述可弯折的第一区域重迭,且所述多个所述第二晶体管与所述第二区域重迭,
其中两相邻的所述多个所述第一晶体管的所述第一通道区在所述第一方向上以一第一间隔距离彼此分隔,
其中两相邻的所述多个所述第二晶体管的所述第二通道区在所述第一方向上以一第二间隔距离彼此分隔,
其中所述第一间隔距离大于所述第二间隔距离。
7.如权利要求1所述的显示设备,其特征在于,所述第一比例大于0且小于或等于0.5,以及所述第一尺寸相对于所述第二尺寸的一第三比例大于或等于0.2且小于或等于0.8。
8.如权利要求1所述的显示设备,其特征在于,所述第一比例大于0.5且小于1,以及所述第一尺寸相对于所述第二尺寸的一第三比例大于或等于0.4且小于或等于0.95。
9.如权利要求1所述的显示设备,其特征在于,其中至少一个所述多个第一显示单元与其中至少一个所述多个第二显示单元包括发光二极管、有机发光二极管、量子点发光二极管或微型发光二极管。
10.如权利要求1所述的显示设备,其特征在于,两相邻的所述多个第一显示单元在所述第一方向上以一第一间隔距离彼此分隔,两相邻的所述多个第二显示单元在所述第一方向上以一第二间隔距离彼此分隔,其中所述第一间隔距离大于所述第二间隔距离。
11.如权利要求1所述的显示设备,其特征在于,还包括:
一显示结构,重迭于所述基板,其中所述显示结构在重迭于所述可弯折的第一区域的部分具有一第三厚度,且所述显示结构在重迭于所述第二区域的部分具有一第四厚度,
其中所述第三厚度小于所述第四厚度。
12.一种显示设备,其特征在于,包括:
一基板,具有一可弯折的第一区域以及相邻于所述可弯折的第一区域的一第二区域,其中一弯折轴重迭于所述可弯折的第一区域,所述基板在所述可弯折的第一区域中具有一第一厚度,且所述基板在所述第二区域中具有一第二厚度,其中所述第一厚度小于所述第二厚度,且所述第一厚度相对于所述第二厚度的比例为一第一比例;
一第一晶体管,重迭于所述可弯折的第一区域,并具有一第一通道区,所述第一通道区在垂直于所述弯折轴的一第一方向上具有一第一尺寸;以及
一第二晶体管,重迭于所述第二区域,并具有一第二通道区,所述第二通道区在所述第一方向上具有一第二尺寸,其中所述第一尺寸小于所述第二尺寸;
其中所述基板的一下表面与所述第一通道区之间的最小距离为第一距离,所述基板的所述下表面与所述第二通道区之间的最小距离为第二距离,其中所述第一距离小于所述第二距离;
其中当所述第一比例大于0且小于或等于0.5时,则所述第一尺寸相对于所述第二尺寸的一第二比例大于或等于0.2且小于或等于0.8;以及
其中当所述第一比例大于0.5且小于1时,则所述第一尺寸相对于所述第二尺寸的所述第二比例大于或等于0.4且小于或等于0.95。
Priority Applications (1)
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CN202210435469.2A CN114823732A (zh) | 2017-06-30 | 2018-06-04 | 显示设备 |
Applications Claiming Priority (4)
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US62/527,198 | 2017-06-30 | ||
US15/803,830 | 2017-11-05 | ||
US15/803,830 US10243030B2 (en) | 2017-06-30 | 2017-11-05 | Foldable display design |
Related Child Applications (1)
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Publications (2)
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CN109216377A CN109216377A (zh) | 2019-01-15 |
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Family Applications (5)
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CN201711435140.1A Pending CN109216396A (zh) | 2017-06-30 | 2017-12-26 | 显示设备 |
CN202110333254.5A Pending CN113066912A (zh) | 2017-06-30 | 2018-05-24 | 显示装置 |
CN201810510202.9A Active CN109216376B (zh) | 2017-06-30 | 2018-05-24 | 显示装置 |
CN201810564664.9A Active CN109216377B (zh) | 2017-06-30 | 2018-06-04 | 显示设备及其制作方法 |
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Family Applications Before (3)
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---|---|---|---|
CN201711435140.1A Pending CN109216396A (zh) | 2017-06-30 | 2017-12-26 | 显示设备 |
CN202110333254.5A Pending CN113066912A (zh) | 2017-06-30 | 2018-05-24 | 显示装置 |
CN201810510202.9A Active CN109216376B (zh) | 2017-06-30 | 2018-05-24 | 显示装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202210435469.2A Pending CN114823732A (zh) | 2017-06-30 | 2018-06-04 | 显示设备 |
Country Status (5)
Country | Link |
---|---|
US (6) | US10021762B1 (zh) |
EP (2) | EP3422409B1 (zh) |
KR (1) | KR102538810B1 (zh) |
CN (5) | CN109216396A (zh) |
PH (1) | PH12018000355A1 (zh) |
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-
2018
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- 2018-05-24 CN CN201810510202.9A patent/CN109216376B/zh active Active
- 2018-05-29 EP EP18174710.6A patent/EP3422409B1/en active Active
- 2018-05-29 EP EP20198870.6A patent/EP3790050A1/en active Pending
- 2018-06-04 CN CN201810564664.9A patent/CN109216377B/zh active Active
- 2018-06-04 CN CN202210435469.2A patent/CN114823732A/zh active Pending
- 2018-06-08 US US16/003,246 patent/US10149366B1/en active Active
- 2018-10-30 US US16/174,939 patent/US10292235B2/en active Active
- 2018-11-05 PH PH12018000355A patent/PH12018000355A1/en unknown
-
2019
- 2019-02-12 US US16/274,212 patent/US10608066B2/en active Active
- 2019-04-02 US US16/372,612 patent/US10680050B2/en active Active
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Also Published As
Publication number | Publication date |
---|---|
PH12018000355A1 (en) | 2019-12-11 |
KR102538810B1 (ko) | 2023-05-31 |
US10680050B2 (en) | 2020-06-09 |
EP3422409B1 (en) | 2020-11-18 |
US20190075633A1 (en) | 2019-03-07 |
CN114823732A (zh) | 2022-07-29 |
US10292235B2 (en) | 2019-05-14 |
CN109216377A (zh) | 2019-01-15 |
US20190006449A1 (en) | 2019-01-03 |
US20190229170A1 (en) | 2019-07-25 |
US10608066B2 (en) | 2020-03-31 |
KR20190003289A (ko) | 2019-01-09 |
CN109216376A (zh) | 2019-01-15 |
CN109216376B (zh) | 2021-04-16 |
EP3422409A1 (en) | 2019-01-02 |
US10149366B1 (en) | 2018-12-04 |
US10021762B1 (en) | 2018-07-10 |
EP3790050A1 (en) | 2021-03-10 |
CN113066912A (zh) | 2021-07-02 |
US10243030B2 (en) | 2019-03-26 |
CN109216396A (zh) | 2019-01-15 |
US20190181208A1 (en) | 2019-06-13 |
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