CN113066912A - 显示装置 - Google Patents

显示装置 Download PDF

Info

Publication number
CN113066912A
CN113066912A CN202110333254.5A CN202110333254A CN113066912A CN 113066912 A CN113066912 A CN 113066912A CN 202110333254 A CN202110333254 A CN 202110333254A CN 113066912 A CN113066912 A CN 113066912A
Authority
CN
China
Prior art keywords
conductive layer
display device
layer
light emitting
emitting unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110333254.5A
Other languages
English (en)
Inventor
蔡宗翰
李冠锋
吴昱娴
吴湲琳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Innolux Corp
Original Assignee
Innolux Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Innolux Corp filed Critical Innolux Corp
Publication of CN113066912A publication Critical patent/CN113066912A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1233—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different thicknesses of the active layer in different devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/179—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/877—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)

Abstract

一种显示装置包括：一驱动电路装置设置于一基板上；一第一导电层设置于驱动电路上；多个发光单元，至少一个发光单元设置于第一导电层上且电性连接至驱动电路；以及一第二导电层设置于上述至少一个发光单元上。第二导电层具有一第一表面及一第二表面，而第一表面对应上述至少一个发光单元且第二表面对应位于第一导电层外侧的区域。第一表面的粗糙度大于至少一部分的第二表面的粗糙度。

Description

显示装置
本申请是2018年05月24日申请的，申请号为201810510202.9，发明名称为“显示装置”的发明专利申请的分案申请。
技术领域
本发明实施例是关于一种显示技术，且特别是关于一种使用微型发光装置(light-emitting devices,LEDs)的显示装置。
背景技术
显示装置(例如，液晶显示器(liquid-crystal displays,LCDs)或有源阵列有机发光显示器(active organic light-emitting displays,AMOLEDs))是广泛使用于电子产品中，诸如笔记本电脑、个人数字助理(personal digital assistants,PDAs)、电子书、投影机及手机等。
具有显示装置的显示面板通常利用一个或多个光源部件于像素区内。近来，日益考虑以LED作为显示装置的光源部件。LED将电能转为光能，且通常具有量子井结构以作为发光层并夹设于二个相对的掺杂半导体层之间。当改进了用于LED的半导体材料，许多新的LED能够更有效率地将电能转为光能。
LED显示面板采用整合薄膜晶体管(thin-film transistor,TFT)阵列基板的发光二极管阵列以形成显示器的像素(或子像素)。由于LED的自发光特性，因此可省去背光模块。如此一来，LED显示面板能够更轻薄而能获得具竞争性的优势。
相较于有机LED(OLED)显示装置，LED显示装置更为稳定且具有较长的使用寿命、较高的亮度及较短的响应时间。因此，LED显示器逐渐为下一世代显示产品主流所采用。
尽管现行利用LED作为光源部件的显示装置，然其未能完全满足所有面向。因此，在显示装置的制造中仍存在一些问题留待克服。
发明内容
根据一些实施例，本发明提供一种显示装置，包括：一基板；一驱动电路，设置于基板上；一第一导电层，设置于驱动电路上；多个发光单元，发光单元的至少一个设置于第一导电层上，且电性连接至驱动电路；以及一第二导电层，设置于上述至少一个发光单元的上；其中第二导电层具有一第一表面及一第二表面，而第一表面对应上述至少一个发光单元且第二表面对应第一导电层外侧的一区域；以及其中第一表面的粗糙度大于至少一部分的第二表面的粗糙度。
根据一些实施例，本发明提供一种显示装置，包括：一基板；一驱动电路，设置于基板上；一第一导电层，设置于驱动电路上；以及多个发光单元，发光单元的至少一个设置于第一导电层上，且电性连接至驱动电路，其中发光单元的每一者包括设置于第一导电层上的一第一半导体层以及设置于第一半导体上的一第二半导体层；其中第一半导体层具有一第一表面邻近于第一导电层，且第二半导体层具有一第二表面，第二表面为最远离第一导电层的表面；以及其中第二表面的粗糙度大于第一表面的粗糙度。
根据一些实施例，本发明提供一种显示装置，包括：一基板；一驱动电路，设置于基板上；一第一导电层，设置于驱动电路上；以及多个发光单元，发光单元的至少一个设置于第一导电层上，且电性连接至驱动电路，其中发光单元的每一者包括设置于第一导电层上的一第一电极、设置于第一电极上的一第一半导体层、设置于第一半导体层上的一第二半导体层以及设置于第二半导体层上的一第二电极；其中第一电极具有一第一表面邻近于第一导电层，且第二电极具有一第二表面，第二表面为最远离第一导电层的表面；以及其中第二表面的粗糙度大于第一表面的粗糙度。
附图说明
为让本发明的上述目的、特征和优点能更明显易懂，以下结合附图对本发明的具体实施方式作详细说明，其中：
图1是绘示出根据本发明一些实施例的具有排成阵列的显示装置的显示面板平面示意图。
图2-1是绘示沿图1中2-2’线的剖面示意图。
图2-2是绘示根据本发明一些实施例的显示装置剖面示意图。
图3是绘示根据本发明一些实施例的显示装置剖面示意图。
图4-1是绘示根据本发明一些实施例的显示装置剖面示意图。
图4-2是绘示根据本发明一些实施例的显示装置剖面示意图。
图4-3是绘示根据本发明一些实施例的显示装置剖面示意图。
图4-4是绘示根据本发明一些实施例的显示装置剖面示意图。
图5-1是绘示根据本发明一些实施例的显示装置剖面示意图。
图5-2是绘示根据本发明一些实施例的显示装置剖面示意图。
图6-1是绘示根据本发明一些实施例的显示装置剖面示意图。
图6-2是绘示根据本发明一些实施例的显示装置剖面示意图。
图中元件标号说明：
10、10a、20、30、30a、30b、30c、40、40a、50、50a 显示装置
100 基板
110 驱动电路
112 有源层
113 栅极介电层
114 栅极电极
116 源极电极
118 漏极电极
122 共同线
123 第一绝缘层
124 第一导电层
124a 上表面
124b 下表面
125 第二绝缘层
125a、151a 导电结构
127 凹口
129 接合层
130 发光单元
132 第一电极
132a、134a、138a、140a、152c 表面
134 第一半导体层
136 量子井结构
138 第二半导体层
140 第二电极
151 第三绝缘层
152 第二导电层
152a、152a’ 第一表面
152b 第二表面
155、165 散射层
155a、165a 粗糙表面
167 散射粒子
214 栅极线
216 数据线
具体实施方式
以下说明本发明实施例的制作与使用。然而，可轻易了解本发明实施例提供许多合适的发明概念而可实施于广泛的各种特定背景。所揭示的特定实施例仅仅用于说明以特定方法制作及使用本发明，并非用以局限本发明的范围。再者，在本发明实施例的附图及说明内容中是使用相同的标号来表示相同或相似的部件。
请参照图1及图2-1，其中图1是绘示出根据本发明一些实施例的具有排成阵列的显示装置10的显示面板平面示意图，而图2-1是绘示沿图1中2-2’线的剖面示意图。在一些实施例中，显示装置10可为微型LED显示装置。在一些实施例中，显示装置10包括一基板100，其可包括玻璃、石英、塑胶、纤维、橡胶或其他透明材料。在一些实施例中，基板100可包括金属箔(metal foil)或其他非透明材料。
如图2-1所示，在一些实施例中，显示装置10更包括一驱动电路110设置于基板100上。在一些实施例中，驱动电路110包括一晶体管(例如，薄膜晶体管)设置于基板100上。举例来说，晶体管可作为用于显示区或周边区的驱动元件。
在上述这些情形中，驱动电路110包括一有源层112、一栅极介电层113、一栅极电极114、一源极电极116以及一漏极电极118。有源层112设置于基板100上且包括一通道区及位于通道区两侧的源极区及漏极区。有源层112可由非晶硅、多晶硅(例如，低温多晶硅(lowtemperature polysilicon,LTPS))、金属氧化物半导体(例如，氧化铟镓锌(IndiumGallium Zinc Oxide,IGZO)、氧化铟锌(Indium Zinc Oxide,IZO)、氧化铟镓(IndiumGallium Oxide,IGO)、氧化铟锡锌(Indium tin Zinc Oxide,ITZO)或其他类似物)。
栅极介电层113覆盖有源层112及基板100，且具有开口而露出有源层112的源极区及漏极区。栅极介电层113可包括无机材料，例如氧化硅、氮化硅或其组合。
栅极电极114设置于栅极介电层113上，且自栅极线214(绘示于图1，也称作扫描线)延伸。栅极电极114可包括一导电材料，其范例可包括但不限于：铜、铝、金、银、钼、钨、铬、其合金及其他适合的电极材料。
源极电极116自数据线216(绘示于图1)延伸。再者，源极电极116与漏极电极118设置于栅极电极114上，且透过栅极介电层113的开口而分别电性连接至有源层112的源极区及漏极区。源极电极116与漏极电极118可包括导电材料，其范例可包括但不限于：铜、铝、金、银、钼、钨、钛、铬、其合金及其他适合的电极材料。源极电极116与漏极电极118可为一单层或具有多层结构。举例来说，源极电极116与漏极电极118为钼/铝/钼(Mo/Al/Mo)的多层结构。
在一些实施例中，显示装置10更包括一第一绝缘层123设置于栅极介电层113上，并覆盖栅极电极114，使源极电极116及漏极电极118能与栅极电极114电性隔离。第一绝缘层123可由相同或相似于栅极介电层113的材料构成。源极电极116及漏极电极118设置于第一绝缘层123上，且穿过第一绝缘层123而分别电性连接至有源层112的源极区及漏极区。
在一些实施例中，显示装置10更包括一第二绝缘层125，第二绝缘层125具有一凹口127位于驱动电路10上方，且设置于第一绝缘层123上。第二绝缘层125作为一平坦化层且覆盖源极电极116及漏极电极118。再者，第二绝缘层125可包括有机或无机绝缘材料，其范例可包括但不限于：无机材料(诸如，氧化硅、氮化硅、氮氧化硅、金属氧化物)或有机材料(诸如，聚酰亚胺(polyimide)、丙烯酸酯(acrylate)、环氧化物(epoxy)、聚甲基丙烯酸甲酯(poly(methyl methacrylate))、苯并环丁烯(benzocyclobutene)、聚酯纤维(polyester))。
在一些实施例中，显示装置10更包括一第一导电层124顺应性设置于凹口127内。在一些实施例中，第一导电层124可作为一反射层且可由金属构成，其范例可包括但不限于：铝、钛、银、金、钼、铜、或合金。第一导电层124具有一上表面124a及一下表面124b，且上表面124a相对于下表面124b。第一导电层124的下表面124b透过位于第二绝缘层125内的一导电结构125a(例如，一导电插塞)而电性连接至驱动电路110的漏极电极118。
在一些实施例中，显示装置10更包括一共同线122设置于第二绝缘层125上。共同线122可由相同或相似于第一导电层124的材料构成。
在一些实施例中，显示装置10更包括一或多个发光单元130(例如，微型LED)设置于第二绝缘层125的凹口127内的第一导电层124上。在一范例中，显示装置10包括二个发光单元130，如图2-1所示。然而，可以理解的是发光单元130的数量取决于设计需求而不限于图2-1的实施例。
至少一发光单元130相邻于第一导电层124的上表面124a。举例来说，每一发光单元130可透过一接合层129而装设于第一导电层124的上表面124a，使发光单元130经由第一导电层124及导电结构125a电性连接至驱动电路110。接合层129用于透过一接合机制(例如，共晶(eutectic)合金接合)而促进发光单元130的接合，且可由合金构成，其范例可包括但不限于：铟、锡、金、银、钼、或铝。
在一些实施例中，发光单元130包括：一第一电极132透过接合层129而设置于第一导电层124上；一第一半导体层134设置于第一电极132上；一量子井结构136设置于第一半导体层134上；一第二半导体层138设置于量子井结构136上；及一第二电极140设置于第二半导体层138上。在一些实施例中，第一电极132及第二电极140分别作为发光单元130的阳极及阴极。在这些情形中，第一半导体层134及第二半导体层138分别为p型掺杂层及n型掺杂层。另外，当第一电极132及第二电极140分别作为发光单元130的阴极及阳极时，第一半导体层134及第二半导体层138也可分别为n型掺杂层及p型掺杂层。
在一些实施例中，显示装置10更包括一第三绝缘层151设置于第二绝缘层125上，且填入第二绝缘层125的凹口127内，使位于第二绝缘层125的凹口127内的第三绝缘层151环绕发光单元130。再者，第一导电层124环绕位于第二绝缘层125的凹口127内的第三绝缘层151。虽然第三绝缘层151环绕发光单元130，发光单元130的第二电极140露出于第三绝缘层151的上表面。第三绝缘层151可包括一有机绝缘材料，其范例可包括但不限于：聚酰亚胺(polyimide)、丙烯酸酯(acrylate)、环氧化物(epoxy)、聚甲基丙烯酸甲酯(poly(methylmethacrylate))、苯并环丁烯(benzocyclobutene)、聚酯纤维(polyester))。
在一些实施例中，显示装置10更包括一第二导电层152设置于第三绝缘层151及至少一发光单元130上。再者，第二导电层152透过位于第三绝缘层151内的一导电结构151a(例如，一导电插塞)而电性连接至共同线122，使发光单元130的露出的第二电极140经由第二导电层152及导电结构151a而电性连接至共同线122。第二导电层152可包括透明导电材料，其范例可包括但不限于：铟锌氧化物、铟锡氧化物、铟镓锌氧化物、聚(3,4-乙烯基二氧噻吩)(poly(3,4-ethylene-dioxythiophene))、聚苯乙烯撑(poly(p-phenylenevinylene))、聚吡咯(polypyrrole)、聚噻吩(polythiophene)、聚苯胺(polyaniline)、聚苯硫醚(polyphenylene sulfide)、或聚乙炔(polyacetylene)。
在一些实施例中，第二导电层152具有一第一表面152a对应于至少一个发光单元130。举例来说，第二导电层152具有一第一表面152a对应于每一个发光单元130。再者，从上视角度来看，第二导电层152具有一第二表面152b对应于第一导电层124外侧的一区域。在一些实施例中，第一表面152a的粗糙度大于第二表面152b的至少一部分的粗糙度。在一些实施例中，第一表面152a为粗糙表面，而第二表面152b为大体上平坦的表面，使得从上视角度来看，第二导电层152位于第一导电层124外侧的区域具有均匀一致的厚度。在这些情形中，第一表面152a的粗糙度可大于或等于3nm且小于或等于100nm。在本发明中，“粗糙度”的值是经由十点平均粗糙度法(ten point height of irregularities,Rz)所获得，其定义为一测量长度内五个最高峰值与五个最深谷值之间平均值。
请参照图2-2，其绘示根据本发明一些实施例的显示装置10a剖面示意图，其中相同于图2-1的部件是使用相同的标号并省略其说明。在本实施例中，显示装置10a的结构相似于图2-1中显示装置10的结构，因而与显示装置10具有相同的优点。而不同于图2-1中显示装置10的结构，从上视角度来看，显示装置10a的第二导电层152具有一第一表面152a’对应于第二绝缘层125的凹口127内的第一导电层124。类似余图2-1的第一表面152a，第一表面152a’为粗糙表面。在一些实施例中，第一表面152a’的粗糙度大于或等于3nm且小于或等于100nm。
请参照图3，其绘示根据本发明一些实施例的显示装置20剖面示意图，其中相同于图2-1的部件是使用相同的标号并省略其说明。在本实施例中，显示装置20的结构相似于图2-1中显示装置10的结构，因而与显示装置10具有相同的优点。而不同于图2-1中显示装置10的结构，第一导电层124的上表面124a为粗糙表面，且上表面124a的粗糙度大于第二导电层152的第二表面152b的至少不一部分的粗糙度。在一些实施例中，上表面124a对应于第二绝缘层125的凹口127侧壁的部分大体上为平坦的。
在一些实施例中，相似于图2-2所示的第一表面152a’，从上视角度来看，显示装置20内的第二导电层152的第一表面152a可对应于第二绝缘层125的凹口127内的第一导电层124。
由于显示装置20内的发光单元130设置于二个相对且粗糙的表面之间，因此显示装置20的视角效能能够进一步提升。
请参照图4-1及图4-2，其分别绘示根据本发明一些实施例的显示装置30及30a剖面示意图，其中相同于图2-1的部件是使用相同的标号并省略其说明。在本实施例中，显示装置30及30a的结构相似于图2-1中显示装置10的结构，因而与显示装置10具有相同的优点。而不同于图2-1中显示装置10的结构，显示装置30及30a更包括一散射层155设置于发光元件130上方的第二导电层152上。在一些实施例中，散射层155具有一粗糙表面155a相对于第二导电层152的第一表面152a及第二表面152b。在一些实施例中，粗糙表面155a可透过图案化(使用光刻及蚀刻制程、离子轰击制程或其他适合的图案化)而获得。在一些实施例中，散射层155局部覆盖第二导电层152，如图4-1的显示装置30所示。举例来说，从上视角度来看，散射层155可对应于第二绝缘层125的凹口127内的第一导电层124。另外，从上视角度来看，可延伸散射层155以至少覆盖共同线122，如图4-2的显示装置30a所示。在上述情形中，可延伸散射层155以覆盖全部的第二绝缘层152。在一些实施例中，散射层155可由无机材料(诸如，氧化硅、氮化硅、氮氧化硅或金属氧化物)或有机材料(诸如，聚酰亚胺(polyimide)、丙烯酸酯(acrylate)、环氧化物(epoxy)、聚甲基丙烯酸甲酯(poly(methylmethacrylate))、苯并环丁烯(benzocyclobutene)、聚酯纤维(polyester))构成。
在一些实施例中，散射层155包括散射粒子(未绘示)位于其内。举例来说，这些散射粒子可为透明粒子或量子点(quantum dot)透明粒子。在一些实施例中，透明粒子可由氧化硅、氮化硅或金属氧化物构成。在一些实施例中，量子点具有核-壳(core-shall)结构。举例来说，量子点可包括由CdSe、dTe、CdS、ZnS、ZnSe、ZnO、ZnTe、InAs、InP或GaP构成的核以及由ZnS、ZnSe、GaN或GaP构成的壳。
在一些实施例中，如图4-1及图4-2所示的显示装置30及30a的第一导电层124可具有一上表面相同或相似于图3中第一导电层124的上表面。
请参照图4-3，其分别绘示根据本发明一些实施例的显示装置30b剖面示意图，其中相同于图2-1的部件是使用相同的标号并省略其说明。在本实施例中，显示装置30b的结构相似于图2-1中显示装置10的结构，因而与显示装置10具有相同的优点。而不同于图2-1中显示装置10的结构，显示装置30b更包括一散射层165设置于第一导电层124上且位于发光单元130下方。在一些实施例中，散射层165具有一粗糙表面165a相对于第一导电层124的上表面124a。在一些实施例中，粗糙表面165a可透过图案化(使用光刻及蚀刻制程、离子轰击制程或其他适合的图案化)而获得。在一些实施例中，位于第二绝缘层125的凹口127侧壁上的第一导电层124露出于散射层165。在一些实施例中，散射层165由相同或相似于图4-1或图4-2图所示的散射层155的材料构成。
请参照图4-4，其分别绘示根据本发明一些实施例的显示装置30c剖面示意图，其中相同于图4-3的部件是使用相同的标号并省略其说明。在本实施例中，显示装置30c的结构相似于图4-3中显示装置30b的结构，因而与显示装置30b具有相同的优点。而不同于图4-3中显示装置30b的结构，设置于第一导电层124上的散射层165环绕每一发光单元130的至少一部分。举例来说，具有第一导电层124及发光单元130位于其内的凹口127可被散射层165完全填满，使每一发光单元130突出于凹口127的部分露出于散射层165。在一些实施例中，散射层165包括散射粒子167位于其内，以增加散射层165的散射能力，进而增加显示装置30c的视角效能。举例来说，散射粒子167可为透明粒子或量子点透明粒子。在一些实施例中，透明粒子可由氧化硅、氮化硅或金属氧化物构成。在一些实施例中，量子点具有核-壳结构。举例来说，量子点可包括由CdSe、dTe、CdS、ZnS、ZnSe、ZnO、ZnTe、InAs、InP或GaP构成的核以及由ZnS、ZnSe、GaN或GaP构成的壳。
请参照图5-1，其分别绘示根据本发明一些实施例的显示装置40剖面示意图，其中相同于图2-1的部件是使用相同的标号并省略其说明。在本实施例中，显示装置40的结构相似于图2-1中显示装置10的结构，因而与显示装置10具有相同的优点。而不同于图2-1中显示装置10的结构，发光单元130的第一电极132具有一表面132a邻近于第一导电层124且面向第一导电层124的上表面124a。再者，发光单元130的第二电极140具有一表面140a邻近于第二导电层152，相对于第二导电层152的第一表面152a，且为最远离第一导电层124的表面。表面140a的粗糙度大于表面132a的粗糙度。如此一来，第二导电层152的第一表面152a及下方第二电极140的表面140a能够增加来自发光单元130的光线的视角，进而增加显示装置40的视角效能。
在一些实施例中，显示装置40的第一导电层124具有一上表面124a相同或相似于图3的上表面124a。
在一些实施例中，相似于图4-1、4-2、4-3及4-4分别所示的显示装置30、30a、30b及30c，显示装置40可更包括设置于发光单元130上方的第二导电层152上的一散射层155(如图4-1及4-2所示)，或者设置于第一导电层124上且位于发光单元130下方的一散射层165(如图4-3及4-4所示)。
请参照图5-2，其分别绘示根据本发明一些实施例的显示装置40a剖面示意图，其中相同于图5-1的部件是使用相同的标号并省略其说明。在本实施例中，显示装置40a的结构相似于图5-1中显示装置40的结构，因而与显示装置40具有相同的优点。而不同于图5-1中显示装置40的结构，显示装置40a中具有大体上平坦的表面152c的第二导电层152覆盖每一发光单元130的第二电极140。亦即，显示装置40a中的第二导电层152并未具有图5-1所示的第一表面152a。
在一些实施例中，显示装置40a的第一导电层124可具有一上表面124a相同或相似于图3所示的上表面124a。
在一些实施例中，显示装置40a中不具有第一表面152a(如图5-1所示)的第二导电层152覆盖每一发光单元130的第二电极140。在上述情形中，相似于图4-1、4-2、4-3及4-4分别所示的显示装置30、30a、30b及30c，显示装置40a可更包括设置于发光单元130上方的第二导电层152上的一散射层155(如图4-1及4-2所示)，或者设置于第一导电层124上且位于发光单元130下方的一散射层165(如图4-3及4-4所示)。
请参照图6-1，其分别绘示根据本发明一些实施例的显示装置50剖面示意图，其中相同于图2-1的部件是使用相同的标号并省略其说明。在本实施例中，显示装置40的结构相似于图2-1中显示装置10的结构，因而与显示装置10具有相同的优点。而不同于图2-1中显示装置10的结构，发光单元130的第一半导体层134具有一表面134a邻近于第一电极132。再者，发光单元130的第二半导体层138具有一表面138a邻近于第二电极140且为最远离第一导电层124的表面。表面138a的粗糙度大于表面134a的粗糙度。如此一来，第二导电层152的第一表面152a及下方第二半导体层138的表面138a能够增加来自发光单元130的光线的视角，进而增加显示装置50的视角效能。
在一些实施例中，显示装置50中每一发光单元130的第二电极140可具有一粗糙表面邻近于第二导电层152，且第一电极132具有一表面邻近于第一导电层124。第二电极140的粗糙表面及第一电极132的表面可分别相同或相似于图5-1或图5-2所示的表面140a及132a。如此一来，第二导电层152的第一表面152a、第二电极140的粗糙表面及第二半导体层138的表面138a能够增加来自发光单元130的光线的视角，进而增加显示装置50的视角效能。
在一些实施例中，显示装置50的第一导电层124可具有一上表面124a相同或相似于图3所示的上表面124a。
在一些实施例中，相似于图4-1、4-2、4-3及4-4分别所示的显示装置30、30a、30b及30c，显示装置50可更包括设置于发光单元130上方的第二导电层152上的一散射层155(如图4-1及4-2所示)，或者设置于第一导电层124上且位于发光单元130下方的一散射层165(如图4-3及4-4所示)。
请参照第6-2图，其分别绘示根据本发明一些实施例的显示装置50a剖面示意图，其中相同于第6-1图的部件是使用相同的标号并省略其说明。在本实施例中，显示装置50a的结构相似于第6-1图中显示装置50的结构，因而与显示装置50具有相同的优点。而不同于第6-1图中显示装置50的结构，显示装置50a中具有大体上平坦的表面152c的第二导电层152覆盖每一发光单元130的第二电极140。亦即，显示装置50a中的第二导电层152并未具有第6-1图所示的第一表面152a。
在一些实施例中，显示装置50a中每一发光单元130的第二电极140可具有一粗糙表面邻近于第二导电层152，且第一电极132具有一表面邻近于第一导电层124。第二电极140的粗糙表面及第一电极132的表面可分别相同或相似于图5-1或图5-2所示的表面140a及132a。如此一来，第二导电层152的第一表面152a、第二电极140的粗糙表面及第二半导体层138的表面138a能够增加来自发光单元130的光线的视角，进而增加显示装置50a的视角效能。
在一些实施例中，显示装置50a的第一导电层124可具有一上表面124a相同或相似于图3所示的上表面124a。
在一些实施例中，显示装置50a中不具有第一表面152a(如图5-1所示)的第二导电层152覆盖每一发光单元130的第二电极140。在上述情形中，相似于图4-1、4-2、4-3及4-4分别所示的显示装置30、30a、30b及30c，显示装置50a可更包括设置于发光单元130上方的第二导电层152上的一散射层155(如图4-1及4-2所示)，或者设置于第一导电层124上且位于发光单元130下方的一散射层165(如图4-3及4-4所示)。
根据上述实施例，由于从上视角度来看，第二导电层具有一粗糙表面对应至少一个发光单元或是第二绝缘层的凹口内的第一导电层，因此来自位于第二导电层的粗糙表面下方发光单元的光线的视角得以增加，进而提供较佳的视角效能。
再者，由于从上视角度来看，第二导电层具有一大体上平坦的表面对应第一导电层外侧的区域，因此可避免或缓和第二导电层邻近导电结构(其电性连接至共同线)发生破裂。如此一来，可在第二导电层与共同线之间形成较佳的电性连接，进而增加显示装置的可靠度。
根据上述实施例，由于第一导电层具有粗糙的上表面或者被具有粗糙表面的散射层覆盖，因此发光单元设置于二个相对的粗糙表面之间。如此一来，显示装置的视角效能能够进一步提升。
根据上述实施例，由于从上视角度来看，具有粗糙表面的散射层(其对应于第二绝缘层的凹口内的第一导电层)覆盖第二导电层，因此显示装置的视角效能能够进一步提升。
根据上述实施例，由于从上视角度来看，发光单元的第二电极及/或第二半导体层具有粗糙的上表面，因此显示装置的视角效能能够进一步提升。
以上概略说明了本发明数个实施例的特征，使所属技术领域中具有通常知识者对于本发明的型态可更为容易理解。任何所属技术领域中具有通常知识者应了解到可轻易利用本发明作为其它制程或结构的变更或设计基础，以进行相同于此处所述实施例的目的及/或获得相同的优点。任何所属技术领域中具有通常知识者也可理解与上述等同的结构并未脱离本发明的精神和保护范围内，且可在不脱离本发明的精神和范围内，当可作更动、替代与润饰。

Claims (14)

1.一种显示装置，包括：
一基板(100)；
一驱动电路(110)，设置于该基板(100)上；
一绝缘层(125)，位于该驱动电路(110)上方且具有一凹口(127)；
一第一导电层(124)，电性连接至该驱动电路(110)；以及
一发光单元(130)，设置于该绝缘层(125)的该凹口(127)内，其中该发光单元(130)包括一第一半导体层(134)以及一第二半导体层(138)，该第一半导体层(134)电性连接至该第一导电层(124)；
其中该第一半导体层(134)具有一第一表面(134a)邻近于该第一导电层(124)，且该第二半导体层(138)具有一第二表面(138a)最远离该第一表面(134a)；以及
其中该第二表面(138a)的粗糙度大于该第一表面(134a)的粗糙度。
2.如权利要求1所述的显示装置，其特征在于，
该发光单元更包括设置于该第一导电层与该第一半导体层之间的一第一电极以及电性连接至该第二半导体层的一第二电极；
该第一电极具有一第三表面邻近于该第一导电层，而该第二电极具有一第四表面最远离该第二半导体层；以及
该第四表面的粗糙度大于该第三表面的粗糙度。
3.如权利要求1所述的显示装置，其特征在于，
更包括一第二导电层电性连接至该第二电极，该第二导电层具有一第五表面与一第六表面，该第五表面对应于至少一个发光单元，该第六表面对应该第一导电层外侧的一区域，该第五表面的粗糙度大于至少一部分的该第六表面的粗糙度。
4.如权利要求1所述的显示装置，更包括一第一散射层，设置于该发光单元上方。
5.如权利要求1所述的显示装置，更包括一第二散射层，设置于该第一导电层上且位于该发光单元下方。
6.一种显示装置，包括：
一基板(100)；
一驱动电路(110)，设置于该基板(100)上；
一绝缘层(125)，位于该驱动电路(110)上方且具有一凹口(127)；
一第一导电层(124)，电性连接至该驱动电路(110)；以及
一发光单元(130)，该发光单元(130)设置于该绝缘层(125)的该凹口(127)内且电性连接至该第一导电层(124)，其中该发光单元(130)包括一第二电极(140)以及电性连接至该第二电极(140)的一第二半导体层(138)；
其中该第二电极(140)具有一第一表面(140a)最远离该第二半导体层，且该第二半导体层(138)具有一第二表面(138a)邻近于该第二电极(140)；以及
其中该第一表面(140a)的粗糙度大于该第二表面(138a)的粗糙度。
7.如权利要求6所述的显示装置，其特征在于，
该发光单元更包括一第一半导体层以及设置于该第一导电层与该第一半导体层之间的一第一电极；
该第一电极具有一第三表面邻近于该第一导电层；以及
该第一表面的粗糙度大于该第三表面的粗糙度。
8.如权利要求6所述的显示装置，其特征在于，
更包括一第二导电层电性连接至该第二电极，该第二导电层具有一第四表面与一第五表面，该第四表面对应于至少一个发光单元，该第五表面对应该第一导电层外侧的一区域，该第四表面的粗糙度大于至少一部分的该第五表面的粗糙度。
9.如权利要求6所述的显示装置，更包括一第一散射层，设置于该发光单元上方。
10.如权利要求6所述的显示装置，更包括一第二散射层，设置于该第一导电层上且位于该发光单元下方。
11.一种显示装置，包括：
一基板(100)；
一驱动电路(110)，设置于该基板(100)上；以及
一绝缘层(125)，位于该驱动电路(110)上方且具有一凹口(127)；
一第一导电层(124)，电性连接至该驱动电路(110)；
一发光单元(130)，该发光单元(130)设置于该绝缘层(125)的该凹口(127)内且电性连接至该第一导电层(124)，该发光单元(130)包括一第一电极(132)、电性连接至该第一电极(132)的一第一半导体层(134)、一第二半导体层(138)以及电性连接至该第二半导体层(138)的一第二电极(140)；
其中该第一电极(132)具有一第一表面(132a)最远离该第一半导体层(134)，且该第二电极(140)具有一第二表面(140a)最远离该第二半导体层(138)；以及
其中该第二表面(140a)的粗糙度大于该第一表面(132a)的粗糙度。
12.如权利要求11所述的显示装置，其特征在于，
更包括一第二导电层电性连接至该发光单元，该第二导电层具有一第三表面与一第四表面，该第三表面对应于至少一个发光单元，该第四表面对应该第一导电层外侧的一区域，该第三表面的粗糙度大于至少一部分的该第四表面的粗糙度。
13.如权利要求11所述的显示装置，更包括一第一散射层，设置于该发光单元上方。
14.如权利要求11所述的显示装置，更包括一第二散射层，设置于该第一导电层上且位于该发光单元下方。
CN202110333254.5A 2017-06-30 2018-05-24 显示装置 Pending CN113066912A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762527198P 2017-06-30 2017-06-30
US62/527,198 2017-06-30
US15/794,153 US10021762B1 (en) 2017-06-30 2017-10-26 Display device
US15/794,153 2017-10-26
CN201810510202.9A CN109216376B (zh) 2017-06-30 2018-05-24 显示装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201810510202.9A Division CN109216376B (zh) 2017-06-30 2018-05-24 显示装置

Publications (1)

Publication Number Publication Date
CN113066912A true CN113066912A (zh) 2021-07-02

Family

ID=62749698

Family Applications (5)

Application Number Title Priority Date Filing Date
CN201711435140.1A Pending CN109216396A (zh) 2017-06-30 2017-12-26 显示设备
CN202110333254.5A Pending CN113066912A (zh) 2017-06-30 2018-05-24 显示装置
CN201810510202.9A Active CN109216376B (zh) 2017-06-30 2018-05-24 显示装置
CN201810564664.9A Active CN109216377B (zh) 2017-06-30 2018-06-04 显示设备及其制作方法
CN202210435469.2A Pending CN114823732A (zh) 2017-06-30 2018-06-04 显示设备

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201711435140.1A Pending CN109216396A (zh) 2017-06-30 2017-12-26 显示设备

Family Applications After (3)

Application Number Title Priority Date Filing Date
CN201810510202.9A Active CN109216376B (zh) 2017-06-30 2018-05-24 显示装置
CN201810564664.9A Active CN109216377B (zh) 2017-06-30 2018-06-04 显示设备及其制作方法
CN202210435469.2A Pending CN114823732A (zh) 2017-06-30 2018-06-04 显示设备

Country Status (5)

Country Link
US (6) US10021762B1 (zh)
EP (2) EP3422409B1 (zh)
KR (1) KR102538810B1 (zh)
CN (5) CN109216396A (zh)
PH (1) PH12018000355A1 (zh)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018180110A (ja) * 2017-04-06 2018-11-15 株式会社ジャパンディスプレイ 表示装置
CN107331670A (zh) * 2017-07-10 2017-11-07 深圳市华星光电技术有限公司 显示面板及其制作方法、显示设备
KR102508251B1 (ko) * 2017-11-28 2023-03-08 엘지디스플레이 주식회사 폴더블 표시장치
US10193042B1 (en) 2017-12-27 2019-01-29 Innolux Corporation Display device
KR20210006923A (ko) * 2018-05-11 2021-01-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 패널, 표시 장치, 입출력 장치, 정보 처리 장치
DE112019002234B4 (de) * 2018-05-31 2024-09-12 Japan Display Inc. Anzeigevorrichtung
KR102538829B1 (ko) * 2018-09-18 2023-06-02 삼성디스플레이 주식회사 전자 장치
US10892257B2 (en) * 2019-01-21 2021-01-12 Innolux Corporation Foldable display device
JP7264669B2 (ja) * 2019-03-01 2023-04-25 株式会社ジャパンディスプレイ 表示装置
CN109785763B (zh) * 2019-03-29 2022-02-08 上海天马微电子有限公司 一种显示面板及其制备方法、显示装置
EP3723459A1 (en) * 2019-04-10 2020-10-14 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Component carrier with high passive intermodulation (pim) performance
CN110085621B (zh) * 2019-05-15 2021-03-26 京东方科技集团股份有限公司 电子设备、显示面板、驱动背板及其制造方法
CN110190068B (zh) * 2019-05-21 2020-12-08 深圳市华星光电半导体显示技术有限公司 显示面板和显示面板的制造方法
KR20210010681A (ko) 2019-07-17 2021-01-28 삼성디스플레이 주식회사 전계 발광 장치
KR20210025746A (ko) 2019-08-27 2021-03-10 삼성디스플레이 주식회사 백라이트 유닛 및 그것을 포함하는 표시 장치
JP7349294B2 (ja) 2019-08-29 2023-09-22 株式会社ジャパンディスプレイ Ｌｅｄモジュール及び表示装置
JP7311362B2 (ja) * 2019-08-29 2023-07-19 株式会社ジャパンディスプレイ 表示装置
JP7317635B2 (ja) * 2019-08-29 2023-07-31 株式会社ジャパンディスプレイ 表示装置
CN110993775B (zh) * 2019-11-22 2021-10-22 京东方科技集团股份有限公司 一种背板及其制作方法、背光模组、显示面板
JP7379114B2 (ja) 2019-11-25 2023-11-14 株式会社ジャパンディスプレイ 表示装置
TW202032226A (zh) * 2020-01-14 2020-09-01 友達光電股份有限公司 軟性電路結構
KR20210129297A (ko) * 2020-04-17 2021-10-28 삼성디스플레이 주식회사 표시 장치
CN111540281A (zh) * 2020-05-19 2020-08-14 Tcl华星光电技术有限公司 柔性彩色滤光膜及其制作方法、全彩微发光二极管器件
TWI737484B (zh) * 2020-06-05 2021-08-21 友達光電股份有限公司 顯示裝置
JP2021196510A (ja) 2020-06-15 2021-12-27 株式会社ジャパンディスプレイ 表示装置
CN111769108A (zh) * 2020-06-30 2020-10-13 上海天马微电子有限公司 显示面板及其制备方法、显示装置
CN111682044B (zh) * 2020-07-10 2022-04-08 深圳市华星光电半导体显示技术有限公司 一种显示面板及其制备方法、显示装置
CN112420793A (zh) * 2020-11-18 2021-02-26 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
KR20220082123A (ko) * 2020-12-09 2022-06-17 삼성디스플레이 주식회사 표시 장치
CN112859460B (zh) * 2021-02-25 2022-10-04 Tcl华星光电技术有限公司 显示装置、拼接显示装置以及绑定结构
CN113363276B (zh) * 2021-05-28 2022-11-22 业成科技（成都）有限公司 显示面板及其制作方法
CN115482769A (zh) * 2021-05-31 2022-12-16 京东方科技集团股份有限公司 像素驱动电路及其驱动方法、显示基板
DE102021126224A1 (de) * 2021-10-08 2023-04-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische vorrichtung und verfahren
CN114628566B (zh) * 2022-03-28 2023-06-09 东莞市中麒光电技术有限公司 光色转换结构、发光单元及发光单元制作方法
WO2024189663A1 (ja) * 2023-03-10 2024-09-19 シャープディスプレイテクノロジー株式会社 表示モジュール

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1444426A (zh) * 2002-03-04 2003-09-24 三洋电机株式会社 电致发光显示装置及其制造方法
US20150263235A1 (en) * 2014-03-17 2015-09-17 Samsung Display Co., Ltd. Flexible display apparatus and method of manufacturing the same
EP2980870A1 (en) * 2013-03-28 2016-02-03 Toshiba Hokuto Electronics Corp. Light-emitting device, production method therefor, and device using light-emitting device
CN106486509A (zh) * 2015-08-31 2017-03-08 三星显示有限公司 显示设备
CN106684094A (zh) * 2015-08-31 2017-05-17 三星显示有限公司 包括表面等离激元层的显示装置

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100251091B1 (ko) * 1996-11-29 2000-04-15 구본준 액정표시장치의 제조방법 및 그 제조방법으로 제조되는 액정표시장치
CN1188300A (zh) * 1996-12-30 1998-07-22 三星电管株式会社 利用磷光体发光的液晶显示器件
KR20050035970A (ko) 2003-10-14 2005-04-20 삼성전자주식회사 연성 인쇄회로기판 및 이를 이용한 액정표시장치
CN100547815C (zh) * 2004-12-24 2009-10-07 株式会社东芝 白色led、背光和液晶显示器
US7335920B2 (en) * 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
US8222116B2 (en) * 2006-03-03 2012-07-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20080008964A1 (en) * 2006-07-05 2008-01-10 Chia-Hua Chan Light emitting diode and method of fabricating a nano/micro structure
KR101559603B1 (ko) * 2008-02-07 2015-10-12 미쓰비시 가가꾸 가부시키가이샤 반도체 발광 장치, 백라이트, 컬러 화상 표시 장치, 및 그들에 사용하는 형광체
KR101199129B1 (ko) * 2009-12-21 2012-11-09 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
WO2011129135A1 (ja) * 2010-04-14 2011-10-20 シャープ株式会社 蛍光体基板およびその製造方法、ならびに表示装置
KR101976065B1 (ko) * 2011-05-11 2019-05-09 삼성디스플레이 주식회사 유기발광표시장치 및 이의 제조방법
KR101860935B1 (ko) * 2012-03-15 2018-05-25 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
KR102097443B1 (ko) * 2013-05-09 2020-04-07 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
US11251381B2 (en) * 2013-06-07 2022-02-15 Samsung Display Co., Ltd. Display device
KR102248464B1 (ko) * 2013-07-24 2021-05-07 삼성디스플레이 주식회사 접이식 표시 장치 및 그 제조 방법
CN103713436B (zh) * 2013-12-11 2016-08-17 京东方科技集团股份有限公司 一种柔性基板和显示装置
JP2015138123A (ja) * 2014-01-22 2015-07-30 株式会社ジャパンディスプレイ 表示装置
EP3114899B1 (en) * 2014-03-05 2021-04-28 LG Electronics Inc. Method of fabricating a display device using semiconductor light emitting device
CN103996694B (zh) * 2014-04-25 2015-06-10 京东方科技集团股份有限公司 一种oled显示器及其制备方法
CN103972423B (zh) * 2014-05-08 2016-03-23 京东方科技集团股份有限公司 一种oled发光器件及其制备方法、显示装置
KR102203104B1 (ko) * 2014-06-05 2021-01-15 삼성디스플레이 주식회사 플렉서블 디스플레이 장치
WO2016043175A1 (ja) * 2014-09-18 2016-03-24 シャープ株式会社 有機エレクトロルミネッセンス装置および有機エレクトロルミネッセンス装置の製造方法
US9349758B2 (en) 2014-09-30 2016-05-24 Lg Display Co., Ltd. Flexible display device with divided power lines and manufacturing method for the same
US10061414B2 (en) 2014-10-22 2018-08-28 Lg Innotek Co., Ltd. Touch panel
KR102241773B1 (ko) 2014-12-18 2021-04-19 삼성디스플레이 주식회사 터치 센서 장치
CN105097406B (zh) * 2015-06-11 2017-06-09 京东方科技集团股份有限公司 平滑装置、平滑方法、薄膜晶体管、显示基板及显示装置
KR102313366B1 (ko) 2015-06-17 2021-10-18 삼성디스플레이 주식회사 플렉서블 디스플레이 장치와, 이의 제조 방법
KR102401013B1 (ko) * 2015-07-15 2022-05-24 삼성디스플레이 주식회사 플렉서블 디스플레이 장치 및 그 제조방법
KR102374751B1 (ko) 2015-08-31 2022-03-15 엘지디스플레이 주식회사 백플레인 기판 및 이를 적용한 플렉서블 디스플레이
KR102446889B1 (ko) 2015-12-28 2022-09-26 삼성디스플레이 주식회사 플렉서블 기판 및 이를 포함하는 플렉서블 표시 장치
US10361385B2 (en) 2016-02-12 2019-07-23 Samsung Display Co., Ltd. Display device
KR102643637B1 (ko) 2016-03-02 2024-03-06 삼성디스플레이 주식회사 디스플레이 장치
TWI740908B (zh) 2016-03-11 2021-10-01 南韓商三星顯示器有限公司 顯示設備
KR102536250B1 (ko) 2016-03-17 2023-05-25 삼성디스플레이 주식회사 디스플레이 장치
KR102505879B1 (ko) 2016-03-24 2023-03-06 삼성디스플레이 주식회사 디스플레이 장치
KR102451726B1 (ko) 2016-03-28 2022-10-07 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
TWI574094B (zh) * 2016-07-28 2017-03-11 友達光電股份有限公司 顯示面板
JP6775376B2 (ja) * 2016-10-14 2020-10-28 株式会社ジャパンディスプレイ 表示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1444426A (zh) * 2002-03-04 2003-09-24 三洋电机株式会社 电致发光显示装置及其制造方法
EP2980870A1 (en) * 2013-03-28 2016-02-03 Toshiba Hokuto Electronics Corp. Light-emitting device, production method therefor, and device using light-emitting device
US20150263235A1 (en) * 2014-03-17 2015-09-17 Samsung Display Co., Ltd. Flexible display apparatus and method of manufacturing the same
CN106486509A (zh) * 2015-08-31 2017-03-08 三星显示有限公司 显示设备
CN106684094A (zh) * 2015-08-31 2017-05-17 三星显示有限公司 包括表面等离激元层的显示装置

Also Published As

Publication number Publication date
CN109216396A (zh) 2019-01-15
CN109216376A (zh) 2019-01-15
PH12018000355A1 (en) 2019-12-11
US10149366B1 (en) 2018-12-04
US20190075633A1 (en) 2019-03-07
US10680050B2 (en) 2020-06-09
US10243030B2 (en) 2019-03-26
US10021762B1 (en) 2018-07-10
US10292235B2 (en) 2019-05-14
EP3422409A1 (en) 2019-01-02
CN109216376B (zh) 2021-04-16
CN114823732A (zh) 2022-07-29
US20190181208A1 (en) 2019-06-13
US20190006449A1 (en) 2019-01-03
CN109216377A (zh) 2019-01-15
KR102538810B1 (ko) 2023-05-31
CN109216377B (zh) 2022-05-24
KR20190003289A (ko) 2019-01-09
US10608066B2 (en) 2020-03-31
EP3790050A1 (en) 2021-03-10
EP3422409B1 (en) 2020-11-18
US20190229170A1 (en) 2019-07-25

Similar Documents

Publication Publication Date Title
CN109216376B (zh) 显示装置
US11550181B2 (en) Display device and electronic device
US9501165B2 (en) Organic light emitting diode display device with touch screen and method of fabricating the same
US9659966B2 (en) Flexible display substrate, flexible organic light emitting display device and method of manufacturing the same
CN109728186B (zh) 有机发光二极管显示装置
CN110010621B (zh) 电致发光显示装置
KR20180039210A (ko) 박막 트랜지스터 어레이 기판 및 그의 제조방법
US12132072B2 (en) Display device and method of fabricating the same
TW201935722A (zh) 微型發光裝置
CN113851512A (zh) 显示装置
US11948516B2 (en) Display device
CN114242749A (zh) 显示装置
CN100553389C (zh) 有机发光二极管显示面板
EP4344388A1 (en) Display device
US20240021761A1 (en) Electronic device
CN217606819U (zh) 显示装置
US20240349553A1 (en) Display panel and display apparatus
CN118841500A (zh) 显示装置
CN115298823A (zh) 驱动背板及其制备方法、显示装置
KR20210111918A (ko) 표시 장치 및 이의 제조 방법
CN118507435A (zh) 膜上芯片封装
CN117594605A (zh) 发光显示装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination