CN109075102A - 衬底热处理装置 - Google Patents

衬底热处理装置 Download PDF

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CN109075102A
CN109075102A CN201680083753.0A CN201680083753A CN109075102A CN 109075102 A CN109075102 A CN 109075102A CN 201680083753 A CN201680083753 A CN 201680083753A CN 109075102 A CN109075102 A CN 109075102A
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王晖
杨宏超
吴均
王文军
陈福平
方志友
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ACM (SHANGHAI) Inc
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Abstract

本发明公开了一种用于热处理衬底的衬底热处理装置，包括烤盘、多个支撑件、挡板和驱动装置。烤盘设有至少一条气体通道。多个支撑件支撑衬底。挡板安装在烤盘的顶面，挡板包围衬底且挡板的内壁与衬底之间形成有间隙。驱动装置驱动该多个支撑件上升或下降。热处理衬底时，通过烤盘的气体通道向衬底和烤盘顶面之间的空间供入热的气体，热的气体从挡板的内壁与衬底之间的间隙流出。

Description

衬底热处理装置
技术领域
本发明涉及半导体器件制造领域，尤其涉及用于热处理衬底的衬底热处理装置。
背景技术
光刻工艺是半导体器件制造的重要组成部分，在光刻工艺中会进行各种热处理，例如在衬底上旋转涂光刻胶后的软烘(soft bake)、后烘(post-exposure bake)以及显影完成后的硬烘(hard bake)。热处理衬底时，随着半导体器件精度的提高，在热处理过程中要求高度的温度均匀性。在现有的衬底热处理装置中，衬底通常被放置在烤盘上直接加热。尽管这种热处理方式很简单，但是由于衬底的翘曲，这种加热方式很难保证衬底均匀受热。哪怕衬底看上去非常平坦，但实际上，衬底可能仍然存在一定程度的翘曲。尤其是，如果衬底是超薄衬底，那么衬底的翘曲可能更加明显。如图12a至图12c所示，衬底1215可能上凸、下凹或两者均有，无论衬底1215具有何种形式的翘曲，如果衬底1215被放置在烤盘1202上直接加热，由于衬底1215上的任意点和烤盘1202之间的距离(h)不相同，且烤盘1202上方存在温度梯度，因此，衬底1215在热处理过程中受热不均，热处理后衬底1215的温度不均匀，从而会对半导体器件的品质造成不良影响甚至造成衬底1215报废。图13所示为衬底1215上任意点的受热温度t(h)与衬底1215上的任意点与烤盘1202之间的距离(h)之间的关系。可以看出，受热温度t(h)随着距离(h)的增大而减小。此外，在衬底1215热处理之前，衬底1215可能经历例如涂胶、显影工艺。当衬底1215被放置在烤盘1202上加热时，衬底1215上的有机溶剂，例如热的光刻胶，容易回流并弄脏烤盘1202。
发明内容
本发明提出一种用于热处理衬底的衬底热处理装置，包括烤盘、多个支撑件、挡板和驱动装置。烤盘设有至少一条气体通道。多个支撑件支撑衬底。挡板固定在烤盘的顶面，挡板包围衬底且挡板的内壁与衬底之间形成有间隙。驱动装置驱动多个支撑件上升或下降。当热处理衬底时，热的气体通过烤盘的气体通道供应至衬底和烤盘顶面之间的空间，且该热的气体从挡板的内壁与衬底之间的间隙流出。
如上所述，本发明的衬底热处理装置的优点至少包括三方面，首先，无论衬底是否翘曲，通过向衬底和烤盘顶面之间的空间供入热的气体以增强气体对流并在衬底和烤盘顶面之间形成等温层，衬底均匀受热；其次，由于挡板的作用，衬底与烤盘中心对齐，并且由于挡板的内壁与衬底之间形成的间隙足够小，无论衬底是否翘曲，衬底四周的热的气体从间隙流出的流量一致，以在衬底和烤盘顶面之间形成等温层；再次，因为挡板的内壁与衬底之间的间隙很小，且在热处理过程中，持续不断的向衬底和烤盘顶面之间的空间供入热的气体，热的气体和有机溶剂的混合气体被持续排出，衬底上的有机溶剂难以回流到支撑件和烤盘，避免频繁清洗支撑件。
附图说明
图1是本发明的一种具体实施方式的用于热处理衬底的衬底热处理装置的截面图。
图2是衬底热处理装置装载或卸载衬底的横截面图。
图3是本发明的另一种具体实施方式的用于热处理衬底的衬底热处理装置的截面图。
图4是本发明的又一种具体实施方式的用于热处理衬底的衬底热处理装置的截面图。
图5是衬底热处理装置装载或卸载衬底的横截面图。
图6是本发明的又一种具体实施方式的用于热处理衬底的衬底热处理装置的截面图。
图7是与多个限位销组合的挡板用于衬底中心对准及挡板的内壁和衬底之间形成有间隙的俯视图。
图8是限位销的侧视图。
图9a是本发明的衬底热处理装置的支撑件的爆炸图。
图9b是本发明的衬底热处理装置的支撑件的透视图。
图10a-10c是使用本发明的衬底热处理装置热处理具有上凸、下凹或两者均有的衬底的示意图。
图11是使用本发明的衬底热处理装置热处理衬底时衬底上任意点的受热温度t(h)与衬底上任意点到烤盘之间的距离(h)之间的关系。
图12a-12c是使用现有的衬底热处理装置热处理具有上凸、下凹或两者均有的衬底的示意图。
图13是使用现有的衬底热处理装置热处理衬底时衬底上任意点的受热温度t(h)与衬底上任意点到烤盘之间的距离(h)之间的关系。
具体实施方式
如图1所示为本发明的一种具体实施方式的用于热处理衬底的衬底热处理装置。该衬底热处理装置包括隔热座101、烤盘102、挡板103、提升盖104和多个支撑件110。烤盘102设置在隔热座101内，用于加热衬底115。烤盘102可以是铝制的圆形电加热板。在热处理过程中，烤盘102顶面的温度分布非常均匀。为了热处理不同尺寸的衬底115，烤盘102的尺寸由衬底115的尺寸决定。例如，通常使用的衬底115的尺寸为8英寸或12英寸，烤盘102的直径可以是350mm，因此，烤盘102可以热处理尺寸为8英寸或12英寸的衬底115。
烤盘102位于隔热座101内且烤盘102的中心与隔热座101的中心对准。烤盘102的侧壁和隔热座101之间设有间隔114，用于避免烤盘102侧壁的温度特性受影响，同时当烤盘102受热膨胀时，隔热座101被烤盘102挤压。隔热座101由耐高温材料制成，如陶瓷。隔热座101的中心设有第一气体通道1011，第一气体通道1011穿过隔热座101。烤盘102的中心设有第二气体通道1021，第二气体通道1021穿过烤盘102并与第一气体通道1011相连通。第一气体通道1011的一端与第二气体通道1021相连通，第一气体通道1011的另一端连接由隔热材料包裹的输气管道106。气体加热器107设置在输气管道106上，用于加热输气管道106内的气体，以便通过第一气体通道1011和第二气体通道1021向衬底115和烤盘102顶面之间的空间供入热的气体。衬底115由多个分别穿过隔热座101和烤盘102的支撑件110支撑在烤盘102顶面的上方。该多个支撑件110固定在支撑臂109上，支撑臂109与驱动装置108相连，驱动装置108驱动支撑臂109上升或下降，从而带动该多个支撑件110上升或下降，进一步带动衬底115上升或下降以调节衬底115和烤盘102顶面之间的距离或用于装载或卸载衬底115。驱动装置108可以是马达。
如图9a和图9b所示，在一种具体实施方式中，支撑件110包括防滑销1101和支撑杆1102。防滑销1102包括用于支撑衬底115的球形头，防滑销1102采用例如螺纹锁紧的方式安装在支撑杆1102的顶端，可以方便拆卸或替换防滑销1101。由于防滑销1101具有防滑功能，因此，将衬底115放置在防滑销1101上并上下移动时，防滑销1101可以防止衬底115水平移动。支撑杆1102的底端安装在支撑臂109上。
挡板103固定在烤盘102的顶面，且挡板103是可拆卸的。挡板103包围衬底115且挡板103的内壁与衬底115之间设有间隙113，间隙113的范围在0.1mm-1mm，优选为0.1mm-0.5mm。挡板103具有导向面1031以便于衬底115装载在支撑件110上，导向面1031是倾斜的并与竖直面之间有一定角度，角度小于20°，优选为15°。挡板103的材质可以选用包裹有隔热材料的陶瓷或不锈钢。
提升盖104位于挡板103的上方，提升盖104具有中空腔1041，提升盖104设有进气口1042和出气口1043，进气口1042和出气口1043与中空腔1041相连通且出气口1043连接排气系统。通过进气口1042和出气口1043，热处理过程中产生混合气体可以被排出。提升盖104还设有与中空腔1041相连通的排液口1044。
温度传感器111设置在烤盘102内，用于监测烤盘102的温度，温度传感器111可以是热电偶。隔热座101设置在基座112上。
当使用本发明的衬底热处理装置热处理已经经过，例如旋转涂光刻胶的衬底115时，如图2所示，驱动装置108驱动支撑臂109上升使多个支撑件110到达装载位置，然后，通过使用如机械手116将衬底115放置在该多个支撑件110上。驱动装置108驱动支撑臂109向下移动使衬底115到达工艺位置，衬底115和烤盘102顶面之间具有一定间距，因此，衬底115不接触烤盘102的顶面，间距的大小由工艺要求而定。热的惰性气体或热氮气通过第一气体通道1011和第二气体通道1021供应至衬底115和烤盘102顶面之间的空间。以热的惰性气体为例，热的惰性气体的温度可以与烤盘102的温度相同或接近烤盘102的温度。通过向衬底115和烤盘102顶面之间的空间供入热的惰性气体，气体对流增强，且在衬底115和烤盘102的顶面之间形成等温层，使热传导率相同并破坏烤盘102顶面上方空间的温度梯度。因此，无论衬底115是否翘曲，衬底115在热处理过程中均匀受热。热处理过程中产生的混合气体通过进气口1042排到中空腔1041中，中空腔1041内的混合气体通过出气口1043排出。衬底115在热处理之前，衬底115可能经历涂胶、显影工艺。当热处理衬底115时，有机溶剂，例如衬底115上的光刻胶，挥发并随着热惰性气体一起排到中空腔1041内，有机溶剂在中空腔1041内冷凝并通过排液口1044排出。由于挡板103的内壁和衬底115之间的间隙113足够小，且在热处理过程中，热惰性气体被持续供入到衬底115和烤盘102顶面之间的空间，衬底115上的有机溶剂难以回流到支撑件110和烤盘102上。此外，本发明的衬底热处理装置包括安装在烤盘102顶面的挡板103，当采用本发明的衬底热处理装置热处理衬底115时，衬底115很容易与烤盘102的中心对齐。当机械手116装载或卸载衬底115时，无需再对中心。此外，挡板103的内壁与衬底115之间的间隙113足够小，无论衬底115是否翘曲，衬底115四周的热惰性气体从间隙113流出的流量一致，以在衬底115和烤盘102顶面之间形成等温层。衬底115热处理完成后，驱动装置108驱动支撑臂109上升，使多个支撑件110到达卸载位置，机械手116从支撑件110上取走衬底115并停止供应热惰性气体。
如图10a-10c和图11所示，尽管衬底115上凸、下凹或两者都有，由于向衬底115和烤盘102顶面之间的空间供入热惰性气体以增强气体对流并在衬底115和烤盘102顶面之间形成等温层，尽管衬底115上任意点到烤盘102之间的距离(h)不同，衬底115仍可均匀受热，热处理完成后，衬底115的温度均匀一致。
如图3所示，在另一种具体实施方式中，隔热座101和烤盘102分别设有多条第一气体通道1011和多条第二气体通道1021，用于向衬底115和烤盘102顶面之间的空间供入热的气体。该多条第一气体通道1011与输气管道106相连。
如图4和图5所示，在另一种具体实施方式中，为了避免衬底115对偏而引起衬底115接触挡板103，多个限位销117竖直插入挡板103和烤盘102内，该多个限位销117沿着挡板103内壁均匀分布。如图8所示，每个限位销117设有导向段1171和限位段1172。如图7所示，衬底115被放置在支撑件110上且沿着导向段1171下降到工艺位置时，衬底115受限位段1172限制，以便衬底115与烤盘102中心对齐且挡板103的内壁与衬底115之间形成间隙113。
如图6所示，与图4和图5所揭示的实施例相比，图6所揭示的实施例中的隔热座101和烤盘102分别设有多条第一气体通道1011和多条第二气体通道1021，用于向衬底115和烤盘102顶面之间的空间供入热的气体。该多条第一气体通道1011与输气管道106相连。
如上所述，本发明的衬底热处理装置的优点至少包括三方面，首先，无论衬底115是否翘曲，通过向衬底115和烤盘102顶面之间的空间供入热的气体以增强气体对流并在衬底115和烤盘102的顶面之间形成等温层，衬底115均匀受热；其次，由于挡板103和限位销117的作用，衬底115自动与烤盘102中心对齐。此外，由于挡板103的内壁与衬底115之间形成的间隙113足够小，无论衬底115是否翘曲，衬底115四周的热气从间隙113流出的流量一致以在衬底115和烤盘102顶面之间形成等温层；最后，因为挡板103的内壁与衬底115之间的间隙113很小，且在热处理过程中，持续不断的向衬底115和烤盘102顶面之间的空间供入热的气体，热的气体和有机溶剂的混合气体被持续排出，衬底115上的有机溶剂难以回流到支撑件110和烤盘102上，避免频繁清洗支撑件110。
以上所述，仅是本发明的具体说明，并非对本发明的详尽描述或任何形式上的限制。任何熟悉本领域的技术人员，在不脱离本发明技术方案范围情况下，利用上述揭示的技术内容对本发明技术方案作出许多可能的变动和修饰，或修改为等同变化的等效实施例，均仍属于本发明技术方案保护的范围。

Claims (20)

1.一种用于热处理衬底的衬底热处理装置，其特征在于，包括：
烤盘，设有至少一条气体通道；
多个支撑件，支撑衬底；
挡板，固定在烤盘的顶面，挡板包围衬底且挡板的内壁与衬底之间形成有间隙；以及
驱动装置，驱动该多个支撑件上升或下降；
其中，热处理衬底时，通过烤盘的气体通道向衬底和烤盘顶面之间的空间供入热的气体，热的气体从挡板的内壁与衬底之间的间隙流出。
2.如权利要求1所述的装置，其特征在于，进一步包括多个竖直插入挡板和烤盘内的限位销。
3.如权利要求2所述的装置，其特征在于，每个限位销具有导向段和限位段。
4.如权利要求1所述的装置，其特征在于，挡板是可拆卸的。
5.如权利要求1所述的装置，其特征在于，间隙的范围在0.1mm-1mm。
6.如权利要求1所述的装置，其特征在于，进一步包括隔热座，烤盘设置在隔热座内，隔热座设有至少一条第一气体通道，该第一气体通道与烤盘的气体通道相连通。
7.如权利要求6所述的装置，其特征在于，隔热座的第一气体通道的一端与烤盘的气体通道相连通，隔热座的第一气体通道的另一端连接由隔热材料包裹的输气管道。
8.如权利要求7所述的装置，其特征在于，进一步包括设置在输气管道上的用于加热输气管道内气体的气体加热器。
9.如权利要求1所述的装置，其特征在于，所述多个支撑件分别穿过烤盘，该多个支撑件固定在支撑臂上，支撑臂连接驱动装置。
10.如权利要求9所述的装置，其特征在于，每个支撑件包括防滑销和支撑杆，防滑销包括用于支撑衬底的球形头，防滑销安装在支撑杆的顶端，支撑杆的底端固定在支撑臂上。
11.如权利要求1所述的装置，其特征在于，挡板设有导向面。
12.如权利要求11所述的装置，其特征在于，导向面是倾斜的并与竖直面之间有一定角度，角度小于20°。
13.如权利要求1所述的装置，其特征在于，挡板的材料为由隔热材料包裹的陶瓷或不锈钢。
14.如权利要求1所述的装置，其特征在于，进一步包括设置在挡板上方的提升盖，用于排走混合气体。
15.如权利要求14所述的装置，其特征在于，提升盖具有中空腔，提升盖设有进气口和出气口，进气口和出气口与中空腔相连通，出气口连接排气系统。
16.如权利要求15所述的装置，其特征在于，提升盖设有与中空腔相连通的排液口。
17.如权利要求1所述的装置，其特征在于，进一步包括设置在烤盘内的温度传感器。
18.如权利要求1所述的装置，其特征在于，热的气体为热惰性气体或热氮气。
19.如权利要求1所述的装置，其特征在于，热的气体的温度与烤盘的温度相同。
20.如权利要求1所述的装置，其特征在于，热的气体的温度接近烤盘的温度。
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6367239U (zh) * 1986-10-22 1988-05-06
CN101569000A (zh) * 2007-09-03 2009-10-28 佳能安内华股份有限公司 衬底热处理设备和衬底热处理方法
US20090286407A1 (en) * 2008-05-15 2009-11-19 Macronix International Co., Ltd. Baking apparatus, baking mehod and method of reducing gap width
CN105280518A (zh) * 2014-05-30 2016-01-27 盛美半导体设备（上海）有限公司 半导体基板的热处理装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1003538C2 (nl) * 1996-07-08 1998-01-12 Advanced Semiconductor Mat Werkwijze en inrichting voor het contactloos behandelen van een schijfvormig halfgeleidersubstraat.
JPH1055951A (ja) * 1996-08-12 1998-02-24 Sony Corp ベーキング装置およびベーキング方法
JP3585215B2 (ja) 1999-05-24 2004-11-04 東京エレクトロン株式会社 基板処理装置
JP2001176764A (ja) 1999-12-17 2001-06-29 Tokyo Electron Ltd 加熱処理装置
JP4024980B2 (ja) * 2000-02-21 2007-12-19 東京エレクトロン株式会社 加熱処理方法及び加熱処理装置
JP3547724B2 (ja) * 2001-09-25 2004-07-28 沖電気工業株式会社 レジストパターンのベーク装置及びレジストパターンの形成方法
JP3950424B2 (ja) 2003-02-10 2007-08-01 東京エレクトロン株式会社 熱処理装置
JP3718688B2 (ja) * 2003-06-17 2005-11-24 東京エレクトロン株式会社 加熱装置
US7993460B2 (en) * 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control
KR101185794B1 (ko) * 2004-06-28 2012-10-02 쿄세라 코포레이션 웨이퍼 가열장치와 반도체 제조장치
TWI281833B (en) * 2004-10-28 2007-05-21 Kyocera Corp Heater, wafer heating apparatus and method for manufacturing heater
JP4666473B2 (ja) * 2005-05-12 2011-04-06 大日本スクリーン製造株式会社 基板熱処理装置
KR20060122569A (ko) * 2005-05-27 2006-11-30 삼성전자주식회사 공정 챔버 주변의 고온 유지 영역 내 온도 센서들을 갖는화학 기상 증착 장비들
JP4530933B2 (ja) * 2005-07-21 2010-08-25 大日本スクリーン製造株式会社 基板熱処理装置
JP4666496B2 (ja) * 2005-12-07 2011-04-06 大日本スクリーン製造株式会社 基板熱処理装置
JP4707593B2 (ja) * 2006-03-23 2011-06-22 大日本スクリーン製造株式会社 熱処理装置と基板吸着方法
JP2008186934A (ja) * 2007-01-29 2008-08-14 Dainippon Screen Mfg Co Ltd 熱処理装置および熱処理方法
US9169562B2 (en) 2010-05-25 2015-10-27 Singulus Mocvd Gmbh I. Gr. Parallel batch chemical vapor deposition system
JP6107742B2 (ja) 2014-05-09 2017-04-05 東京エレクトロン株式会社 熱処理装置、熱処理方法及び記憶媒体

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6367239U (zh) * 1986-10-22 1988-05-06
CN101569000A (zh) * 2007-09-03 2009-10-28 佳能安内华股份有限公司 衬底热处理设备和衬底热处理方法
US20090286407A1 (en) * 2008-05-15 2009-11-19 Macronix International Co., Ltd. Baking apparatus, baking mehod and method of reducing gap width
CN105280518A (zh) * 2014-05-30 2016-01-27 盛美半导体设备（上海）有限公司 半导体基板的热处理装置

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