CN108604552B - 半导体装置以及用于制造这种半导体装置的方法 - Google Patents

半导体装置以及用于制造这种半导体装置的方法 Download PDF

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CN108604552B
CN108604552B CN201680080912.1A CN201680080912A CN108604552B CN 108604552 B CN108604552 B CN 108604552B CN 201680080912 A CN201680080912 A CN 201680080912A CN 108604552 B CN108604552 B CN 108604552B
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layer
doping concentration
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semiconductor device
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CN108604552A (zh
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H.巴托夫
M.拉伊莫
L.诺尔
A.米海拉
R.米纳米萨瓦
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Hitachi Energy Ltd
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Hitachi Energy Switzerland AG
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    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
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    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
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    • H01L21/048—Making electrodes
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    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
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    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Composite Materials (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201680080912.1A 2015-12-02 2016-10-28 半导体装置以及用于制造这种半导体装置的方法 Active CN108604552B (zh)

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JP7779076B2 (ja) * 2021-03-08 2025-12-03 富士電機株式会社 窒化物半導体装置の製造方法及び窒化物半導体装置
JP7531446B2 (ja) 2021-04-15 2024-08-09 三菱電機株式会社 炭化珪素半導体装置の製造方法
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CN118538613B (zh) * 2024-07-15 2025-01-28 扬州扬杰电子科技股份有限公司 一种降低导通电阻的平面栅mosfet及其制备方法
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US10553437B2 (en) 2020-02-04
WO2017092940A1 (en) 2017-06-08
EP3176812A1 (en) 2017-06-07
EP3384522B1 (en) 2019-07-17
EP3384523B1 (en) 2019-07-17
US20180350602A1 (en) 2018-12-06
US20180286963A1 (en) 2018-10-04
JP2018537859A (ja) 2018-12-20
US10361082B2 (en) 2019-07-23
CN108604551B (zh) 2022-09-06
EP3384523A1 (en) 2018-10-10
EP3384522A1 (en) 2018-10-10
JP6807390B2 (ja) 2021-01-06
CN108604552A (zh) 2018-09-28
WO2017092939A1 (en) 2017-06-08
JP2018537858A (ja) 2018-12-20
CN108604551A (zh) 2018-09-28
JP7432071B2 (ja) 2024-02-16

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