CN108598062A - 一种新型三维集成封装结构 - Google Patents

一种新型三维集成封装结构 Download PDF

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CN108598062A
CN108598062A CN201810442806.4A CN201810442806A CN108598062A CN 108598062 A CN108598062 A CN 108598062A CN 201810442806 A CN201810442806 A CN 201810442806A CN 108598062 A CN108598062 A CN 108598062A
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tsv
chip
integrated
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姚昕
明雪飞
吉勇
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CETC 58 Research Institute
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Abstract

本发明为一种简便、高效、能满足多功能需求的三维集成封装结构，该封装结构由若干个二维结构通过TSV转接板互连。二维封装结构包括芯片、TSV转接板、再布线层、键合丝、微凸点构成，芯片倒扣焊或者粘接在TSV转接板凹槽内，在所得结构表面设有再布线层，并且通过再布线层以及TSV转接板通孔金属材料实现芯片的信号互连。本发明通过芯片凸点或者引线键合与TSV转接板互连，形成一个整体，减小了封装体积。芯片通过TSV转接板可实现多层三维集成，集成度高，工艺简单，成品率高，提高生产效率。通过在TSV转接板可实现不同功能芯片多功能、系统级三维集成。

Description

一种新型三维集成封装结构
技术领域
本发明属于集成电路封装技术领域，尤其涉及一种新型三维集成封装结构。
背景技术
三维集成作为拓展摩尔定律并实现异质器件集成和小型化、多样性高价值系统方案的热点技术，近年来已经成为集成电路领域最重要的发展方向之一。通过多层芯片堆叠并利用三维互连实现多层芯片的电信号互连，三维集成技术充分利用第三维尺寸，解决目前集成电路面临的数据传输带宽、芯片功耗和速度等问题。通过多种异质芯片的集成，三维集成还实现数字、模拟、射频、传感器、处理器和存储器等多功能系统集成提供了解决途径。三维集成技术的发展，使集成电路领域有可能不再仅仅依靠晶体管尺寸的不断缩小和巨额投资，在相当长的一段时间内仍旧可以继续按照摩尔定律的速度向前发展。
传统的三维集成封装主要通过封装器件的三维堆叠，或者芯片的三维叠层来实现，这种集成方式将会导致集成度低、体积大、重量大、电性能差、不够灵活。TSV技术是实现三维集成封装的主要技术之一。TSV是一个在硅（芯片、晶圆或硅芯片载片）上占得通孔，并填充导电材料以在模块或子系统形成垂直互连。基于TSV技术的三维集成封装主要优势在于：更小的互联延迟、更快的速度、更低的寄生效应和噪声、更小的功耗、更小尺寸、更轻的质量。
发明内容
本发明要解决的技术问题是克服现有三维集成封装结构的一些缺陷，提供一种简便、高效、能满足多功能需求的三维集成封装结构，采用TSV转接板方法，将二维的封装结构三维堆叠，实现总体封装的三维集成。
为了解决上述技术问题，本发明提供了如下的技术方案：
本发明为一种简便、高效、能满足多功能需求的三维集成封装结构，该封装结构由若干个二维结构通过TSV转接板互连。所述二维封装结构包括芯片、TSV转接板、再布线层、键合丝、微凸点构成，芯片倒扣焊或者粘接在TSV转接板凹槽内，在所得TSV转接板表面设有再布线层，并且通过再布线层、芯片凸点/键合丝、以及TSV转接板通孔金属材料实现芯片的信号互连。
本发明的技术方案是这样实现的：
一种新型三维集成封装结构，包括如下步骤：
A、根据芯片尺寸大小、芯片焊盘或凸点分布、电互连设计要求，设计制作TSV转接板圆片，TSV转接板圆片包含再布线层，再布线实现TSV转接板内部互连；
B、在所述TSV转接板圆片背面上制作若干凹槽，所述凹槽尺寸、厚度与所述芯片尺寸、厚度相匹配；
C、将芯片高精度倒扣焊在TSV转接板圆片凹槽中，芯片凸点与凹槽中TSV焊盘焊接互连。
D、在所述TSV转接板圆片背面TSV焊盘上制作微凸点，最后切割，形成单颗的基于TSV技术的二维集成封装结构；
E、所述二维集成封装结构通过TSV中填充金属实现芯片与TSV转接板互连集成，然后通过转接板微凸点实现多颗二维集成封装结构Z向堆叠集成，制成三维集成封装结构。
进一步地，TSV转接板圆片凹槽中，芯片与凹槽焊盘互连不仅限于倒扣焊互连工艺，还可以通过引线键合互连工艺实现。
进一步地，芯片不仅限于单一功能，还可以多功能，实现多功能、系统级三维集成。
进一步地，三维封装结构互连不仅限于单颗二维集成封装结构，还可以是包含二维集成封装结构圆片的三维堆叠集成。
本发明的有益效果：
1、采用芯片倒扣焊或者粘接于TSV转接板内，形成一个整体，减小了封装体积。
2、芯片通过TSV转接板可实现多层三维集成，集成度高，工艺简单，成品率高，提高生产效率。
3、通过在TSV转接板实现多功能芯片的多功能、系统级三维集成。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简要介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域的普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1 是本发明一种新型三维集成封装结构的TSV转接板晶圆示意图；
图2 是本发明一种新型三维集成封装结构的TSV转接板截面示意图；
图3 是本发明一种新型三维集成封装结构的TSV转接板晶圆示意图；
图4 是本发明一种新型三维集成封装结构的带有凹槽的TSV转接板截面示意图；
图5 是本发明一种新型三维集成封装结构的二维结构示意图；
图6 是本发明一种新型三维集成封装结构的三维集成封装结构示意图。
其中，1-TSV转接板，2-金属再布线，3-芯片，4-键合引线，5-微凸点。
具体实施方式
为了使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明作进一步地详细描述，显然，所描述的实施例仅仅是本发明一部份实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
下面结合附图对本发明作进一步说明。
本发明所列举的实施例，只是用于帮助理解本发明，不应理解为对本发明保护范围的限定，对于本技术领域的普通技术人员来说，在不脱离本发明思想的前提下，还可以对本发明进行改进和修饰，这些改进和修饰也落入本发明权利要求保护的范围内。
如图5所示，本发明一种新型三维集成封装结构，由若干个二维结构通过微凸点实现Z向堆叠集成三维封装结构；二维封装结构包括芯片、TSV转接板、再布线层、键合丝、微凸点构成，芯片倒扣焊或者粘接在TSV转接板凹槽内，在所得结构表面设有再布线层，并且通过再布线层以及TSV转接板通孔金属材料实现芯片的信号互连。
该三维集成封装结构的制备方法，包括以下步骤：
（1）、根据芯片尺寸大小、芯片焊盘或凸点分布、电互连设计要求，设计制作TSV转接板圆片，TSV转接板圆片包含再布线层，再布线实现TSV转接板内部互连，参见图1、图2；
（2）、在所述TSV转接板圆片背面上制作若干凹槽，所述凹槽尺寸、厚度与所述芯片尺寸、厚度相匹配，参见图3、图4；
（3）、将芯片高精度倒扣焊在TSV转接板圆片凹槽中，芯片凸点与凹槽中TSV焊盘焊接互连；或者将芯片贴装在凹槽内，再进行引线键合，实现芯片与凹槽内TSV焊盘引线键合互连，参见图5；
（4）、在所述TSV转接板圆片背面TSV焊盘上制作微凸点，最后切割，形成单颗的基于TSV技术的二维集成封装结构，参见图5；
（5）、所述二维集成封装结构通过TSV中填充金属实现芯片与TSV转接板互连集成，然后通过转接板微凸点实现多颗二维集成封装结构Z向堆叠集成，制成三维集成封装结构参见图6。
尽管已描述了本发明的优选实施例，但本领域内的技术人员一旦得知了基本创造性概念，则可对这些实施例作出另外的变更和修改。所以，所附权利要求意欲解释为包括优选实施例以及落入本发明范围的所有变更和修改。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (8)

1.一种新型三维集成封装结构的制作方法，其特征在于：
A、根据芯片尺寸大小、芯片焊盘或凸点分布、电互连设计要求，设计制作TSV转接板圆片，TSV转接板圆片包含再布线层，再布线实现TSV转接板内部互连；
B、在所述TSV转接板圆片背面上制作若干凹槽，所述凹槽尺寸、厚度与所述芯片尺寸、厚度相匹配；
C、将芯片高精度倒扣焊在TSV转接板圆片凹槽中，芯片凸点与凹槽中TSV焊盘焊接互连；
D、在所述TSV转接板圆片背面TSV焊盘上制作微凸点，最后切割，形成单颗的基于TSV技术的二维集成封装结构；
E、所述二维集成封装结构通过TSV中填充金属实现芯片与TSV转接板互连集成，然后通过转接板微凸点实现多颗二维集成封装结构Z向堆叠集成，制成三维集成封装结构。
2.根据权利要求1所述的制成三维集成封装结构的方法，其特征在于：芯片与凹槽焊盘互连还可以通过引线键合互连工艺实现。
3.根据权利要求1所述的制成三维集成封装结构的方法，其特征在于：芯片可实现多功能、系统级三维集成。
4.根据权利要求1所述的制成三维集成封装结构的方法，其特征在于：三维封装结构互连还可以是包含二维集成封装结构圆片的三维堆叠集成。
5.一种三维集成封装结构，其特征在于：
所述三维集成封装结构由若干个二维封装结构通过TSV转接板微凸点互连；
所述二维封装结构包括芯片、TSV转接板、再布线层、键合丝，以及微凸点，其中，芯片倒扣焊或者粘接在TSV转接板凹槽内，在所得TSV转接板表面设有再布线层，并且通过再布线层、芯片凸点/键合丝、以及TSV转接板通孔金属实现芯片的信号互连。
6.根据权利要求1所述三维集成封装结构，其特征在于：芯片与凹槽焊盘互连还可以通过引线键合互连工艺实现。
7.根据权利要求1所述三维集成封装结构，其特征在于：芯片可实现多功能、系统级三维集成。
8.根据权利要求1所述新型三维集成封装结构，其特征在于：三维封装结构互连还可以是包含二维集成封装结构圆片的三维堆叠集成。
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