CN108335968B - 基片处理装置 - Google Patents

基片处理装置 Download PDF

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Publication number
CN108335968B
CN108335968B CN201810021832.XA CN201810021832A CN108335968B CN 108335968 B CN108335968 B CN 108335968B CN 201810021832 A CN201810021832 A CN 201810021832A CN 108335968 B CN108335968 B CN 108335968B
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China
Prior art keywords
wafer
gas
hmds
substrate
ion sensor
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CN201810021832.XA
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English (en)
Chinese (zh)
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CN108335968A (zh
Inventor
赤田光
桥本和也
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
CN201810021832.XA 2017-01-13 2018-01-10 基片处理装置 Active CN108335968B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017004067A JP6811097B2 (ja) 2017-01-13 2017-01-13 基板処理装置
JP2017-004067 2017-01-13

Publications (2)

Publication Number Publication Date
CN108335968A CN108335968A (zh) 2018-07-27
CN108335968B true CN108335968B (zh) 2023-04-04

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ID=62911330

Family Applications (1)

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CN201810021832.XA Active CN108335968B (zh) 2017-01-13 2018-01-10 基片处理装置

Country Status (3)

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JP (1) JP6811097B2 (ja)
KR (1) KR102404992B1 (ja)
CN (1) CN108335968B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102277543B1 (ko) * 2019-09-24 2021-07-15 세메스 주식회사 기판 처리 장치 및 방법
KR102567505B1 (ko) * 2020-09-14 2023-08-16 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7050139B2 (ja) * 2020-12-14 2022-04-07 東京エレクトロン株式会社 基板処理装置及び測定用基板

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11125914A (ja) * 1997-10-24 1999-05-11 Nec Corp ウエハ保管方法およびウエハ保管装置
JP2000003903A (ja) * 1998-06-16 2000-01-07 Sony Corp プラズマ処理装置
CN101359590A (zh) * 2007-07-26 2009-02-04 东京毅力科创株式会社 基板处理装置和基板处理方法及存储介质
JP2013093391A (ja) * 2011-10-25 2013-05-16 Tokyo Electron Ltd 加熱装置、加熱方法及び記憶媒体
JP2013197449A (ja) * 2012-03-22 2013-09-30 Hitachi Kokusai Electric Inc 基板処理方法及び基板処理装置
JP2014227593A (ja) * 2013-05-27 2014-12-08 株式会社デンソー 表面処理装置及び表面処理方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61140851A (ja) * 1984-12-14 1986-06-27 Jeol Ltd 分析装置
JPH068796B2 (ja) * 1985-02-01 1994-02-02 株式会社東芝 イオン濃度測定方法
JP2906006B2 (ja) * 1992-10-15 1999-06-14 東京エレクトロン株式会社 処理方法及びその装置
JP3278988B2 (ja) * 1993-06-30 2002-04-30 ソニー株式会社 シランカップリング剤を用いた基板処理方法及び基板処理装置
JP3202954B2 (ja) * 1997-10-14 2001-08-27 東京エレクトロン株式会社 処理液供給装置
JP3469803B2 (ja) * 1999-02-19 2003-11-25 東京エレクトロン株式会社 塗布、現像装置の運転方法及び塗布、現像装置
JP2001313252A (ja) * 2000-02-22 2001-11-09 Tokyo Electron Ltd 処理装置
JP2001291655A (ja) * 2000-04-07 2001-10-19 Tokyo Electron Ltd 疎水化処理の評価方法、レジストパターンの形成方法及びレジストパターン形成システム
US6889568B2 (en) * 2002-01-24 2005-05-10 Sensarray Corporation Process condition sensing wafer and data analysis system
CN101156503A (zh) * 2005-04-04 2008-04-02 松下电器产业株式会社 等离子体处理方法和系统
JP4726070B2 (ja) * 2006-05-23 2011-07-20 東京エレクトロン株式会社 基板処理装置、装置検査方法、装置検査プログラム、及びそのプログラムを記録した記録媒体
JP2009054915A (ja) * 2007-08-29 2009-03-12 Seiko Epson Corp 疎水性の評価方法、ｈｍｄｓ処理基板、疎水性の評価システム、半導体装置、及び電子機器
JP2015032779A (ja) * 2013-08-06 2015-02-16 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR101603786B1 (ko) * 2014-04-29 2016-03-17 주식회사 모원 농도 검출 장치 및 그 방법
JP6404049B2 (ja) * 2014-09-18 2018-10-10 株式会社日立ハイテクノロジーズ 流路一体型センサ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11125914A (ja) * 1997-10-24 1999-05-11 Nec Corp ウエハ保管方法およびウエハ保管装置
JP2000003903A (ja) * 1998-06-16 2000-01-07 Sony Corp プラズマ処理装置
CN101359590A (zh) * 2007-07-26 2009-02-04 东京毅力科创株式会社 基板处理装置和基板处理方法及存储介质
JP2013093391A (ja) * 2011-10-25 2013-05-16 Tokyo Electron Ltd 加熱装置、加熱方法及び記憶媒体
JP2013197449A (ja) * 2012-03-22 2013-09-30 Hitachi Kokusai Electric Inc 基板処理方法及び基板処理装置
JP2014227593A (ja) * 2013-05-27 2014-12-08 株式会社デンソー 表面処理装置及び表面処理方法

Also Published As

Publication number Publication date
KR102404992B1 (ko) 2022-06-07
JP2018113390A (ja) 2018-07-19
CN108335968A (zh) 2018-07-27
KR20180083804A (ko) 2018-07-23
JP6811097B2 (ja) 2021-01-13

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