CN108335968B - Substrate processing apparatus - Google Patents
Substrate processing apparatus Download PDFInfo
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- CN108335968B CN108335968B CN201810021832.XA CN201810021832A CN108335968B CN 108335968 B CN108335968 B CN 108335968B CN 201810021832 A CN201810021832 A CN 201810021832A CN 108335968 B CN108335968 B CN 108335968B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
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- Microelectronics & Electronic Packaging (AREA)
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Coating Apparatus (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention provides a method for properly measuring the concentration of a processing gas by using a simple device. A hydrophobization apparatus (41) processes a wafer (W) with a process gas containing ions, the apparatus including: a processing container (300) for accommodating wafers (W); a gas supply unit (320) for supplying HMDS gas into the processing container (300); an exhaust unit (340) for exhausting the interior of the processing container (300); and an ion sensor (346) that measures at least the number of ions contained in the gas inside the processing container (300), inside the gas supply unit (320), or inside the exhaust unit (340).
Description
Technical Field
The present invention relates to a substrate processing apparatus for processing a substrate to be processed by using a process gas containing ions.
Background
For example, in a photolithography process in the manufacture of semiconductor devices, a predetermined resist pattern is formed on a semiconductor wafer (hereinafter, referred to as "wafer") by performing, in order, for example, a hydrophobization process for hydrophobizing the surface of the wafer, a resist coating process for coating a resist solution on the hydrophobized wafer to form a resist film, an exposure process for exposing the resist film to a predetermined pattern, a development process for developing the exposed resist film, and the like.
The hydrophobization is performed to improve the adhesion between the wafer surface and the resist film, and is performed to change the hydrophilic wafer surface into a hydrophobic one. In the hydrophobizing treatment, a hydrophobizing agent such as HMDS (Hexamethyldisilazane) gas is supplied to the wafer surface for a predetermined time, and the wafer surface and HMDS are chemically reacted with each other. That is, the hydroxyl group on the wafer surface is replaced with a trimethylsilyl group (trimethlianol) by the chemical reaction, and the wafer surface is hydrophobized. Thus, the resist film can be suppressed from peeling off from the wafer surface in the subsequent step.
In order to properly perform the above-mentioned hydrophobization treatment, it is very important to promote the chemical reaction between the wafer and HMDS using an appropriate concentration of HMDS gas. If the hydrophobization treatment is not properly performed, the subsequent resist coating treatment cannot be properly performed, and, for example, a lot defect and a yield decrease occur.
Therefore, the concentration of HMDS gas needs to be monitored. For example, patent document 1 discloses a method of makingA technique for measuring the concentration of HMDS gas by using a HMDS concentration sensor of a constant potential electrolysis system. Further, patent document 1 discloses NH using a diaphragm electrode system 3 Concentration sensor for measuring NH generated by hydrophobization 3 Concentration of gas.
Documents of the prior art
Patent literature
Patent document 1: japanese patent laid-open publication No. 7-142311
Disclosure of Invention
Technical problems to be solved by the invention
However, HMDS gas or NH is directly measured as in the method described in patent document 1 above 3 In the case of the concentration of gas, the concentration sensor used for measurement is expensive and large in size.
In addition, for measuring the concentration of HMDS gas, it is also possible to use, for example, an infrared sensor. However, infrared sensors are also expensive and bulky. Therefore, there is still room for improvement in the measurement of HMDS concentration.
The present invention has been made in view of the above problems, and an object thereof is to appropriately measure the concentration of a process gas using a simple apparatus.
Technical scheme for solving technical problem
In order to achieve the above object, the inventors have earnestly studied and found that there is a correlation between the concentration of HMDS gas and the number of ions measured by the ion sensor when HMDS gas is used. Moreover, the ion sensor is less expensive and smaller in size than existing concentration sensors and infrared sensors.
The present invention has been made based on the above-described knowledge, and a substrate processing apparatus according to the present invention is a substrate processing apparatus for processing a substrate to be processed by using a process gas containing ions, the substrate processing apparatus including: a processing container for accommodating a substrate to be processed; a gas supply unit configured to supply a process gas into the process container; an exhaust unit configured to exhaust the inside of the processing container; and an ion sensor that measures at least the number of ions contained in the gas inside the processing container, inside the gas supply unit, or inside the exhaust unit.
The ion sensor may be provided in the exhaust unit.
The ion sensor may be provided on a measurement substrate having the same shape as the substrate to be processed.
In the substrate processing apparatus of the present invention, at least one of an air velocity sensor and a temperature sensor may be further provided on the measuring substrate.
A gas flow path through which a gas flows may be formed inside the ion sensor, and a collector for collecting ions may be provided inside the gas flow path.
The gas flow path may include a straight portion extending linearly and a curved portion connected to the straight portion, and the collector electrode may be provided at the curved portion.
The collector electrode may be provided so as to cover an inner surface of the gas flow path.
The process gas may be HMDS gas.
Effects of the invention
According to the present invention, the number of ions can be measured using a simple device such as an ion sensor, and the concentration of the process gas can be appropriately measured based on the measured number of ions. Accordingly, by appropriately controlling the concentration of the process gas in this manner, the occurrence of batch defects can be suppressed, and the yield of products can be improved.
Drawings
Fig. 1 is a plan view schematically showing the configuration of a substrate processing system including a hydrophobizing apparatus according to the present embodiment.
Fig. 2 is a front view showing an outline of the structure of the substrate processing system in the present embodiment.
Fig. 3 is a rear view schematically showing the configuration of the substrate processing system according to the present embodiment.
Fig. 4 is a vertical sectional view showing an outline of the structure of the hydrophobic treatment apparatus in the present embodiment.
Fig. 5 is a plan view schematically showing the structure of the hydrophobic treatment apparatus in the present embodiment.
Fig. 6 is a longitudinal sectional view showing an outline of an internal structure of the ion sensor in the present embodiment.
Fig. 7 is a graph showing a time-series change in the number of ions measured by the ion sensor.
Fig. 8 is a vertical sectional view schematically showing the structure of a hydrophobic treatment apparatus according to another embodiment.
Fig. 9 is a plan view schematically showing the structure of a hydrophobic property-imparting apparatus according to another embodiment.
Fig. 10 is a longitudinal sectional view schematically showing an internal structure of an ion sensor according to another embodiment.
Fig. 11 is a longitudinal sectional view showing an outline of an internal structure of an ion sensor according to another embodiment.
Fig. 12 is a longitudinal sectional view schematically showing an internal structure of an ion sensor according to another embodiment.
Fig. 13 is a plan view schematically showing the structure of a measurement wafer provided with an ion sensor in another embodiment.
Fig. 14 is a plan view schematically showing the structure of a measurement wafer provided with an ion sensor in another embodiment.
Fig. 15 is a plan view schematically showing the structure of a measurement wafer provided with an ion sensor according to another embodiment.
Description of the reference numerals
1. Substrate processing system
41. Hydrophobizing apparatus
200. Control unit
300. Processing container
301. Cover body
320. Gas supply unit
340. Exhaust part
346. Ion sensor
350. Gas flow path
351. Repelling electrode
352. Collector electrode
353. Straight line part
354. Bending part
420. Wind speed sensor
A processing space
W wafer
T-measuring wafer.
Detailed Description
Embodiments of the present invention will be described below. In the present specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals to omit redundant description.
< 1. Substrate processing System >
First, a configuration of a substrate processing system including a hydrophobizing apparatus as a substrate processing apparatus in this embodiment will be described. Fig. 1 is a plan view schematically showing the outline of the structure of a substrate processing system 1. Fig. 2 and 3 schematically show an outline of the internal configuration of the substrate processing system 1, respectively, as a front view and a rear view. In the substrate processing system 1, a predetermined process is performed on a wafer W as a substrate to be processed.
As shown in fig. 1, the substrate processing system 1 has a configuration in which a cassette station 10 for carrying in and out a cassette C containing a plurality of wafers W, a processing station 11 including a plurality of various processing devices for performing predetermined processing on the wafers W, and an interface station 13 for transferring the wafers W between the exposure devices 12 adjacent to the processing station 11 are integrally connected to each other.
The cassette station 10 is provided with a cassette table 20. The cassette mounting table 20 is provided with a plurality of cassette mounting plates 21 for mounting the cassette C when the cassette C is carried in and out from the outside of the substrate processing system 1.
The cassette station 10 is provided with a wafer carrier device 23 which is movable on a carrier path 22 extending in the X direction as shown in fig. 1. The wafer transfer device 23 is movable in the vertical direction and the direction (θ direction) around the vertical axis, and can transfer the wafers W between the cassettes C on the cassette placement plates 21 and the transfer device of the third block G3 of the processing station 11 described later.
The processing station 11 is provided with a plurality of, for example, 4 blocks including various devices, i.e., a first block G1 to a fourth block G4. For example, a first block G1 is provided on the front side (negative side in the X direction in fig. 1) of the processing station 11, and a second block G2 is provided on the back side (positive side in the X direction in fig. 1, upper side in the figure) of the processing station 11. The third block G3 is provided on the cassette station 10 side (the negative side in the Y direction in fig. 1) of the processing station 11, and the fourth block G4 is provided on the interface station 13 side (the positive side in the Y direction in fig. 1) of the processing station 11.
For example, in the first block G1, as shown in fig. 2, a plurality of liquid processing apparatuses are arranged, for example, a developing processing apparatus 30 for performing a developing process on the wafer W, a lower anti-reflection film forming apparatus 31 for forming an anti-reflection film (hereinafter referred to as "lower anti-reflection film") on a lower layer of the resist film of the wafer W, a resist coating apparatus 32 for coating a resist solution on the wafer W to form a resist film, and an upper anti-reflection film forming apparatus 33 for forming an anti-reflection film (hereinafter referred to as "upper anti-reflection film") on an upper layer of the resist film of the wafer W, in this order from the bottom up.
For example, 3 developing treatment apparatuses 30, lower antireflection film formation apparatuses 31, resist coating apparatuses 32, and upper antireflection film formation apparatuses 33 are arranged in a horizontal direction. The number and arrangement of the developing apparatus 30, the lower anti-reflection film forming apparatus 31, the resist coating apparatus 32, and the upper anti-reflection film forming apparatus 33 can be arbitrarily selected.
The developing apparatus 30, the lower anti-reflection film forming apparatus 31, the resist coating apparatus 32, and the upper anti-reflection film forming apparatus 33 perform spin coating of a predetermined processing liquid on the wafer W, for example. In spin coating, for example, the processing liquid is discharged from the coating nozzle onto the wafer W, and the processing liquid is spread on the surface of the wafer W by rotating the wafer W.
For example, as shown in fig. 3, in the second block G2, a heat treatment apparatus 40 for performing heat treatment such as heating and cooling on the wafer W, a hydrophobization apparatus 41 for performing hydrophobization to improve adhesion between the resist solution and the wafer W, and a peripheral exposure apparatus 42 for exposing the outer peripheral portion of the wafer W are arranged in the vertical direction and the horizontal direction. The number and arrangement of the heat treatment apparatus 40, the hydrophobization apparatus 41, and the peripheral exposure apparatus 42 can be arbitrarily selected. The structure of the hydrophobizing apparatus 41 will be described later.
For example, in the third block G3, a plurality of passing devices 50, 51, 52, 53, 54, 55, 56 are provided in this order from the bottom. In the fourth block G4, a plurality of delivery devices 60, 61, 62 are provided in this order from the bottom.
As shown in fig. 1, a wafer transfer area D is formed in an area surrounded by the first to fourth blocks G1 to G4. In the wafer transfer area D, a plurality of wafer transfer devices 70 are arranged, and each wafer transfer device 70 has a transfer arm that is movable in the Y direction, the X direction, the θ direction, and the up-down direction. The wafer transfer device 70 is movable in the wafer transfer area D, and transfers the wafer W to a predetermined device in the surrounding first, second, third, and fourth blocks G1, G2, G3, and G4.
As shown in fig. 3, the wafer transfer area D is provided with a shuttle 80 for linearly transferring the wafers W between the third block G3 and the fourth block G4.
The shuttle 80 is linearly movable in the Y direction of fig. 3, for example. The shuttle 80 can move in the Y direction while supporting the wafer W, and transports the wafer W between the delivery device 52 of the third block G3 and the delivery device 62 of the fourth block G4.
As shown in fig. 1, a wafer carrier 90 is provided adjacent to the X-direction positive side of the third block G3. The wafer transfer device 90 includes, for example, a transfer arm that is movable in the X direction, the θ direction, and the up-down direction. The wafer transfer device 90 can move up and down while supporting the wafer W, and transfers the wafer W to each of the transfer devices in the third block G3.
The interface station 13 is provided with a wafer handling device 100 and a transfer device 101. The wafer transfer apparatus 100 includes, for example, a transfer arm that is movable in the Y direction, the θ direction, and the up-down direction. The wafer transfer apparatus 100 can support the wafer W on a transfer arm, for example, and transfer the wafer W between each of the delivery apparatus, the delivery apparatus 101, and the exposure apparatus 12 in the fourth block G4.
In the substrate processing system 1 described above, the control section 200 is provided as shown in fig. 1. The control unit 200 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the wafer W in the substrate processing system 1. The program storage unit also stores a program for controlling the operation of the various processing apparatuses and the drive systems such as the transport apparatus described above to realize the hydrophobization process described later in the substrate processing system 1. The program may be recorded in a computer-readable storage medium such as a Hard Disk (HD), a Flexible Disk (FD), a Compact Disc (CD), a magneto-optical disk (MO), or a memory card, and may be installed from the storage medium to the control unit 200.
< 2. Apparatus for hydrophobic treatment
Next, the structure of the above-described hydrophobization apparatus 41 will be described. Fig. 4 is a longitudinal sectional view schematically showing the configuration of the hydrophobizing apparatus 41. Fig. 5 is a plan view schematically showing the configuration of the hydrophobizing apparatus 41.
The hydrophobic processing apparatus 41 includes a processing container 300 and a lid 301, the processing container 300 accommodates a wafer W and has a substantially U-shape with a bottom having an open top, and the lid 301 covers the opening of the processing container 300. A mounting table 302 for mounting a wafer W is provided on the upper portion of the bottom surface of the processing container 300. The mounting table 302 is provided therein with a heater 303 for heating the wafer W.
Below the mounting table 302, lift pins 304 for supporting and lifting the wafer W from below are provided. The lift pin 304 is movable up and down by the lift driving unit 305. Through holes 306 penetrating in the thickness direction are formed in the mounting table 302 and the processing container 300, and the lift pins 304 are inserted into the through holes 306.
The lid 301 includes a horizontal top plate 310 and a side plate 311 extending vertically downward from the outer peripheral edge of the top plate 310. The lower end 311a of the side plate 311 faces the upper end 300a of the processing container 300, and forms a processing space a in a region surrounded by the processing container 300 and the lid 301.
The lid 301 is provided with an elevating mechanism 312 for elevating and lowering the lid 301 relative to the processing container 300. The position of the lid 301 in the height direction with respect to the processing container 300 is adjusted by the lift mechanism 312 so that a predetermined gap G is formed between the lower end 311a of the side plate 311 and the upper end 300a of the processing container 300.
The lid 301 is provided with a gas supply unit 320 for supplying a process gas and a purge gas to the upper surface of the wafer W positioned in the process container 300. The gas supply portion 320 has a gas supply port 321 formed in the lower surface of the central portion of the lid body 301. The gas supply port 321 communicates with a gas passage 322 formed in the lid body 301.
The gas flow path 322 is connected to a gas supply pipe 323. The gas supply pipe 323 is further connected to an HMDS gas supply pipe 324 and a nitrogen gas supply pipe 325. The HMDS gas supply pipe 324 is connected to an HMDS gas supply source 326 for supplying an HMDS gas as a process gas. The HMDS gas supply pipe 324 is provided with a valve 327 for controlling the flow of HMDS gas. The nitrogen gas supply pipe 325 is connected to a nitrogen gas supply source 328 for supplying nitrogen gas as a purge gas. The nitrogen gas supply pipe 325 is provided with a regulator 329 for feeding nitrogen gas under pressure and a valve 330 for controlling the flow of nitrogen gas in this order from the nitrogen gas supply source 328 side. Then, the gas supplied to the wafer W can be alternately switched to HMDS gas or nitrogen gas by the valves 327 and 330.
The HMDS gas supply 326 is connected to the HMDS liquid supply pipe 331. The HMDS liquid supply pipe 331 is further connected to an HMDS liquid tank 332 that stores liquid HMDS liquid therein. The HMDS liquid supply pipe 331 is provided with a valve 333 for controlling the flow of the HMDS liquid. The HMDS liquid supplied from the HMDS liquid supply pipe 331 is vaporized by the HMDS gas supply source 326 and changed into HMDS gas.
Further, a nitrogen gas supply pipe 334 that communicates with the nitrogen gas supply source 328 is connected to the HMDS gas supply source 326. The nitrogen gas supply pipe 334 is provided with a regulator 335 for feeding nitrogen gas under pressure and a valve 336 for controlling the flow of nitrogen gas in this order from the nitrogen gas supply source 328 side. Then, the HMDS gas in the HMDS gas supply source 326 is pressure-fed into the processing container 300 by the nitrogen gas supplied from the nitrogen gas supply source 328.
The lid 301 is provided with an exhaust unit 340 for exhausting the inside of the processing container 300 (processing space a). The exhaust section 340 has a plurality of exhaust ports 341 formed in the lower end 311a of the side plate 311 of the cover 301. The plurality of exhaust ports 341 are arranged in a ring shape at equal intervals along the circumferential direction of the lower end portion 311 a. Each of the exhaust ports 341 communicates with an exhaust path 342 formed inside the lid body 301.
The exhaust path 342 is connected to an exhaust pipe 343. The exhaust pipe 343 is further connected to an exhaust device 344 such as a vacuum pump. The exhaust pipe 343 is provided with a valve 345 for controlling the flow of gas.
An ion sensor 346 is provided in the exhaust pipe 343 between the exhaust device 344 and the valve 345. The ion sensor 346 can measure the number of ions (the number of ions per unit volume) in the gas flowing inside the exhaust pipe 343.
Specifically, as shown in fig. 6, a gas flow path 350 through which gas flows is formed inside the ion sensor 346. A repulsive electrode 351 is provided on the inner surface of the gas flow path 350, and a collector electrode 352 is provided inside the gas flow path 350. A voltage is applied to the repeller electrode 351 so that the repeller electrode 351 has the same polarity as the ions. For example, when the ions are positive ions, the repulsive electrode 351 is made to be an anode. In this way, the ions flow in a direction away from the repeller electrode 351 and are collected on the collector electrode 352. Then, by measuring the voltage of the collector electrode 352, the number of ions can be measured from the relationship between the number of ions per unit volume and the voltage, which is obtained in advance. Thereby, the number of ions in the gas can be measured.
The ion sensor 346 is disposed in the exhaust pipe 343 as described above, and the purpose thereof is to measure the concentration of HMDS gas by measuring the amount of ions in the gas. Here, as shown in fig. 7, the inventors have earnestly studied and found that, when the hydrophobization apparatus 41 is activated for a period of time between T1 and T2, for example, and the interior of the processing space a is exhausted by the exhaust unit 340 while supplying HMDS gas to the interior of the processing space a by the gas supply unit 320, the number of ions (the number of ions per unit volume) measured by the ion sensor 346 increases. In other words, as the concentration of HMDS gas increases, the number of ions also increases. It can be seen that there is a correlation between the concentration of HMDS gas and the number of ions. Thus, in the present embodiment, the concentration of HMDS gas can be calculated and monitored based on the number of ions measured by the ion sensor 346.
< 3. Wafer processing >
Next, a wafer process performed using the substrate processing system 1 having the above structure is explained.
First, a cassette C containing a plurality of wafers W is loaded into the cassette station 10 of the substrate processing system 1 and placed on the cassette placement plate 21. Thereafter, the wafers W in the cassette C are sequentially taken out by the wafer transfer device 23 and transferred to the transfer device 53 of the third block G3 of the processing station 11.
Subsequently, the wafer W is transferred to the heat treatment apparatus 40 in the second block G2 by the wafer transfer apparatus 70, and the temperature adjustment process is performed. Thereafter, the wafer W is transported by the wafer transport apparatus 70 to, for example, the bottom anti-reflection film forming apparatus 31 of the first block G1, and a bottom anti-reflection film is formed on the wafer W. Then, the wafer W is carried to the heat treatment apparatus 40 in the second block G2 and heat-treated. Thereafter, the wafer W is returned to the transfer device 53 in the third block G3.
Next, the wafer W is transferred to the transfer device 54 of the third block G3 by the wafer transfer device 90. Thereafter, the wafer W is conveyed to the hydrophobizing apparatus 41 of the second block G2 by the wafer conveying apparatus 70, and is subjected to the hydrophobizing process. The hydrophobization in the hydrophobization apparatus 41 will be described later.
Then, the wafer W is conveyed to the resist coating apparatus 32 by the wafer conveying apparatus 70, and a resist film is formed on the wafer W. Thereafter, the wafer W is carried to the heat treatment apparatus 40 by the wafer carrier 70, and the pre-baking treatment is performed. Then, the wafer W is transferred to the transfer device 55 of the third block G3 by the wafer transfer device 70.
Subsequently, the wafer W is conveyed to the upper anti-reflection film forming apparatus 33 by the wafer conveying apparatus 70, and an upper anti-reflection film is formed on the wafer W. Thereafter, the wafer W is conveyed to the heat treatment apparatus 40 by the wafer conveyance apparatus 70, and is heated to adjust the temperature. Then, the wafer W is carried to the peripheral exposure apparatus 42 and subjected to a peripheral exposure process.
Then, the wafer W is transferred to the transfer device 56 in the third block G3 by the wafer transfer device 70.
Next, the wafer W is carried to the delivery device 52 by the wafer carrier 90, and is carried to the delivery device 62 of the fourth block G4 by the shuttle 80. Thereafter, the wafer W is transported to the exposure apparatus 12 by the wafer transport apparatus 100 of the interface station 13, and exposure processing is performed using a predetermined pattern.
Next, the wafer W is transferred to the transfer apparatus 60 of the fourth block G4 by the wafer transfer apparatus 100. Thereafter, the wafer W is carried to the heat treatment apparatus 40 by the wafer carrier apparatus 70, and the post-exposure baking process is performed. Then, the wafer W is carried to the developing treatment apparatus 30 by the wafer carrier apparatus 70 and developed. After the development is completed, the wafer W is carried to the heat treatment apparatus 40 by the wafer carrier 90, and post-baking treatment is performed.
Thereafter, the wafer W is transported to the transfer device 50 of the third block G3 by the wafer transport device 70, and then the wafer W is transported to the cassette C of the predetermined cassette placement plate 21 by the wafer transport device 23 of the cassette station 10. Thereby, the series of photolithography steps is ended.
< 4. Hydrophobization >
Next, the hydrophobization process in the above-described hydrophobization apparatus 41 will be described. When the hydrophobization treatment is performed, the lid 301 is raised to a predetermined position by the raising and lowering mechanism 312. Then, the wafer W is carried in from between the processing container 300 and the lid 301, and is mounted on the mounting table 302.
Next, the lid 301 is lowered to a position where a predetermined gap G is formed between the lower end 311a of the lid 301 and the upper end 300a of the processing container 300, thereby forming a processing space a.
Next, the wafer W is heated by the heater 303 to, for example, 90 to 150 ℃, and thereafter, HMDS gas of a predetermined concentration is supplied from the HMDS gas supply source 326 to the inside of the processing space a at a predetermined flow rate through the gas supply port 321 of the gas supply unit 320. Then, the exhaust device 344 is activated while supplying the HMDS gas, and the HMDS gas is discharged from the exhaust port 341 of the exhaust unit 340 at a predetermined flow rate. Thus, the HMDS gas supplied from above the center of the wafer W flows above the wafer W so as to diffuse toward the outer peripheral edge of the wafer W. The surface of the wafer W that has contacted the HMDS gas is hydrophobized. The HMDS gas diffused to the outer peripheral edge of the wafer W is discharged from the exhaust port 341 of the exhaust unit 340 provided outside the wafer W.
In the hydrophobization treatment, the concentration of HMDS gas is measured by measuring the number of ions by the ion sensor 346. Here, in the conventional technique, for example, the time for supplying the HMDS gas into the processing space a is a time for accumulating the worst conditions evaluated in advance, and the time is set to be more sufficient. In contrast, in the present embodiment, the concentration of the HMDS gas is measured and monitored by the ion sensor 346, and thus the supply time of the HMDS gas can be minimized. As a result, the throughput of wafer processing can be improved.
After the entire surface of the wafer W has been subjected to the hydrophobization treatment by supplying the HMDS gas for the predetermined time, the supply of the HMDS gas is stopped. Next, nitrogen gas is supplied from the nitrogen gas supply pipe 325 through the gas supply port 321 of the gas supply unit 320 at a predetermined flow rate, and the HMDS gas remaining in the process space a is purged. Then, the exhaust device 344 is activated while supplying the HMDS gas, and the HMDS gas is discharged from the exhaust port 341 of the exhaust unit 340 at a predetermined flow rate.
During this purging, the concentration of HMDS gas is measured by measuring the number of ions using the ion sensor 346. Here, in the conventional technique, for example, the time for purging is a time for accumulating the worst conditions evaluated in advance, and this time is set to be a more sufficient time. In contrast, in the present embodiment, the time for purging can be minimized by measuring and monitoring the concentration of HMDS gas by the ion sensor 346. As a result, the throughput of wafer processing can be further improved.
After the purging of the inside of the processing space a is completed, the exhaust device 344 is stopped. Subsequently, the lid body 301 is raised to a predetermined height by the lift mechanism 312, and the wafer W on which the hydrophobization processing has been completed is carried out of the processing container 300. This ends the hydrophobization process in the hydrophobization apparatus 41.
According to the above embodiment, the concentration of HMDS gas can be measured and monitored by an inexpensive and small sensor such as the ion sensor 346. As a result, the hydrophobization treatment can be appropriately performed using the HMDS gas at an appropriate concentration, and the production yield of the product can be improved while suppressing the occurrence of batch defects.
In addition, as described above, since the supply time of the HMDS gas in the hydrophobization process can be minimized and the purge time of the nitrogen gas can be minimized, the throughput of the wafer process can be improved.
Conventionally, a mass flow meter (not shown) is provided in a nitrogen gas supply pipe 334 connecting the HMDS gas supply source 326 and the nitrogen gas supply source 328, and the concentration of HMDS is estimated by measuring the flow rate of nitrogen gas using the mass flow meter. However, for example, when the concentration of the HMDS gas changes due to leakage of the HMDS gas from the process container 300, or when the concentration of the HMDS gas changes due to leakage of the HMDS gas from the gas supply pipe 323, the concentration change cannot be detected by the mass flow meter. However, the present embodiment can detect such a change in the concentration of HMDS gas.
< 5. Another embodiment
Next, another embodiment of the present invention will be described.
< 5-1 > hydrophobization apparatus of another embodiment
In the above embodiment, the ion sensor 346 is provided in the exhaust pipe 343 of the exhaust section 340, but the position where the ion sensor 346 is provided is not limited to this. For example, as shown in fig. 8 and 9, the ion sensor 346 may be provided on the exhaust pipe 343 of the exhaust unit 340 on the downstream side of the exhaust device 344. The ion sensor 346 may be provided on the gas supply pipe 323 of the gas supply unit 320 or on the HMDS gas supply pipe 324. The ion sensor 346 may be provided inside the processing container 300, but is not shown in the figure.
In either case, the same effect as in the above embodiment can be obtained, that is, the concentration of HMDS gas can be monitored by using the ion sensor 346, so that the hydrophobization treatment can be appropriately performed, and the yield of the product can be improved. Also, the throughput of wafer processing can be improved.
However, when the ion sensor 346 is provided in the gas supply unit 320, the HMDS gas may be contaminated because the HMDS gas before processing passes through the ion sensor 346. Thus, the hydrophobization treatment may not be appropriately performed. For this reason, in order to avoid the influence on the hydrophobization process as described above, the ion sensor 346 is more preferably provided in the exhaust section 340.
< 5-2 > an ion sensor according to another embodiment
In the above embodiment, the ion sensor 346 has the repeller electrode 351 and the collector electrode 352, but the structure of the ion sensor 346 is not limited thereto. For example, the repulsive electrode 351 may be omitted as shown in fig. 10. Since HMDS gas is flammable, ion sensor 346 is preferably explosion proof. In this embodiment, since the repulsive electrode 351 is omitted, the application of voltage can be avoided, and thus the ion sensor 346 can be made to meet the explosion-proof standard.
As shown in fig. 11, gas flow path 350 may have straight portion 353 extending linearly and curved portion 354 connected to straight portion 353, and collector electrode 352 may be provided at curved portion 354. In this case, the ions linearly flowing through the linear portion 353 collide with the collector electrode 352 of the curved portion 354, and are reliably collected. Accordingly, the ion sensor 346 can be made explosion proof, and the ion can be efficiently collected by the collector electrode 352.
As shown in fig. 12, the collector electrode 352 may be provided so as to cover the inner surface of the gas flow path 350. In this case, the ions also collide with the collector electrode 352, and are reliably collected. Accordingly, the ion sensor 346 can be made explosion-proof, and the ion can be efficiently collected by the collector electrode 352.
< 5-3 > A wafer for measurement in another embodiment
In the above embodiment, the ion sensor 346 is provided in the hydrophobic treatment apparatus 41, but may be provided in the measurement wafer T as a measurement substrate as shown in fig. 13. The measurement wafer T has the same shape as the wafer W.
The measurement wafer T is provided with a plurality of ion sensors 346, a connection substrate 400, and wires 401 for connecting the ion sensors 346 to the connection substrate 400. The connection substrate 400 is connected to an analog circuit board 403 via a printed wiring board 402. The analog circuit board 403 is further connected to a recorder (not shown) or a control device (not shown). The data measured by the ion sensor 346 is output to the recorder or control device.
Here, in the conventional technique, an inspection of whether or not the wafer W has been properly subjected to the hydrophobization treatment is performed using, for example, a contact angle meter. However, the contact angle meter is expensive. Further, since the contact angle meter is provided outside the hydrophobization apparatus 41, the wafer W after the hydrophobization process needs to be carried to the contact angle meter and inspected, and therefore, the inspection requires a lot of effort.
In this regard, in the present embodiment, the measurement wafer T is conveyed to the inside of the hydrophobization apparatus 41 to be subjected to the hydrophobization, and the concentration of HMDS on the measurement wafer T is measured using the plurality of ion sensors 346. Therefore, the conventional inspection using a contact angle meter can be omitted, and the inspection as to whether or not the hydrophobization treatment has been appropriately performed can be performed inexpensively and easily.
In the above embodiment, the data measured by the ion sensor 346 is output in a wired manner, but may be output in a wireless manner. As shown in fig. 14, the measurement wafer T is provided with a plurality of ion sensors 346, a measurement circuit 410, and a wiring 411 for connecting each ion sensor 346 to the measurement circuit 410. The measurement circuit 410 includes, for example, an analog circuit, a memory, a power supply, a wireless communication circuit, and the like. The data measured by the measurement circuit 410 is output from the measurement circuit 410 to an external control device 412, for example, in a wireless manner.
In this case, it is possible to obtain the same effect as in the above-described embodiment, that is, to perform the check of whether or not the hydrophobization treatment has been appropriately performed, inexpensively and easily.
In addition to the ion sensor 346, the measurement wafer T of the above embodiment may be provided with a wind speed sensor 420 for measuring the wind speed of the gas on the measurement wafer T as shown in fig. 15. In this case, for example, a plurality of ion sensors 346 are provided on one half surface of the wafer T for measurement, and a plurality of wind velocity sensors 420 are provided on the other half surface. The wind speed sensor 420 is connected to a connection substrate 422 via a wire 421. The connection substrate 422 is connected to the analog circuit board 424 via a printed wiring board 423. The analog circuit board 424 is connected to a recorder (not shown) or a control device (not shown). The data measured by the wind speed sensor 420 is output to the recorder or control device.
As shown in fig. 14, the data measured by the ion sensor 346 may be wirelessly output, and similarly, the data measured by the wind speed sensor 420 may be wirelessly output.
In this case, for example, by performing 2 measurements by inverting the measurement wafer T, the concentration of the HDMS gas over the entire surface of the measurement wafer T can be measured by the ion sensor 346, and the wind velocity of the gas over the entire surface of the measurement wafer T can be measured by the wind velocity sensor 420. By measuring both the concentration of the HDMS gas and the wind velocity of the gas in this manner, it is possible to more thoroughly check whether or not the hydrophobization treatment has been appropriately performed.
The measurement wafer T may be provided with a temperature sensor (not shown) for measuring the temperature of the measurement wafer T. That is, the measurement wafer T may be provided with a temperature sensor instead of the wind speed sensor 420 in addition to the ion sensor 346, or may be provided with both the wind speed sensor 420 and the temperature sensor. In this case, by also measuring the temperature of the measurement wafer T, it is possible to more thoroughly perform the inspection of whether or not the hydrophobization treatment has been appropriately performed.
In the above embodiment, the case where the concentration of HMDS is measured has been described as the process gas, but the present invention can be applied to the case where the process gas contains ions and the concentration of another process gas is measured. In addition, other treatments than the hydrophobization treatment can be appropriately performed by using the other treatment gas.
The preferred embodiments of the present invention have been described above with reference to the drawings, but the present invention is not limited to the examples. Various modifications and alterations will be apparent to those skilled in the art within the scope of the technical idea described in the claims, and such modifications and alterations naturally fall within the technical scope of the present invention.
Claims (7)
1. A substrate processing apparatus for processing a substrate to be processed by using a process gas containing ions, comprising:
a processing container for receiving a substrate to be processed;
a gas supply unit configured to supply a process gas into the process container;
an exhaust unit configured to exhaust the inside of the processing container; and
an ion sensor for measuring at least the number of ions contained in the gas inside the processing container, inside the gas supply unit, or inside the exhaust unit,
a gas flow path through which gas flows is formed inside the ion sensor,
a collector electrode for collecting ions is provided inside the gas flow path.
2. The substrate processing apparatus according to claim 1, wherein:
the ion sensor is provided in the exhaust unit.
3. The substrate processing apparatus according to claim 1, wherein:
the ion sensor is provided on a measurement substrate having the same shape as the substrate to be processed.
4. The substrate processing apparatus according to claim 3, wherein:
the substrate for measurement is provided with at least an air velocity sensor or a temperature sensor.
5. The substrate processing apparatus according to claim 1, wherein:
the gas flow path includes a straight portion extending linearly and a curved portion connected to the straight portion,
the collector electrode is provided at the bent portion.
6. The substrate processing apparatus according to claim 1, wherein:
the collector electrode is provided so as to cover an inner surface of the gas flow passage.
7. The substrate processing apparatus according to any one of claims 1 to 6, wherein:
the process gas is HMDS gas.
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| JP2017004067A JP6811097B2 (en) | 2017-01-13 | 2017-01-13 | Board processing equipment |
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| KR102277543B1 (en) * | 2019-09-24 | 2021-07-15 | 세메스 주식회사 | Apparatus and method for treating substrate |
| KR102567505B1 (en) * | 2020-09-14 | 2023-08-16 | 세메스 주식회사 | Apparatus for treating substrate and method for treating substrate |
| JP7050139B2 (en) * | 2020-12-14 | 2022-04-07 | 東京エレクトロン株式会社 | Board processing equipment and measurement board |
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| KR102404992B1 (en) | 2022-06-07 |
| JP2018113390A (en) | 2018-07-19 |
| JP6811097B2 (en) | 2021-01-13 |
| CN108335968A (en) | 2018-07-27 |
| KR20180083804A (en) | 2018-07-23 |
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