JP3469803B2 - Coating and developing apparatus operating method and coating and developing apparatus - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for applying a resist to a substrate and developing the exposed substrate, and an operating method thereof.

[0002]

2. Description of the Related Art In a photoresist process, which is one of semiconductor manufacturing processes, a resist is applied on a thin film formed on a semiconductor wafer (hereinafter referred to as a wafer) and the resist film is exposed by a predetermined pattern. After that, development is performed to form a mask pattern. Such processing is generally performed using a system in which an exposure device is connected to a coating / developing device for coating and developing a resist.

On the other hand, recently, chemically amplified resist materials have been investigated. This resist material produces an acid from the photosensitizer when exposed to light, and this acid diffuses by heat treatment to act as a catalyst, decomposing the base resin which is the main component of the resist material, and changing the molecular structure. It is solubilized or insoluble in the developing solution. As a specific example, many proposals have been made, for example, in which a hydroxyl group in a polymer such as polyvinylphenol is blocked with an alkali group or a silyl group, and the block is removed with an acid to restore alkali solubility. The use of this type of resist has an advantage that it is possible to cope with a fine line width in principle.

By the way, when a chemically amplified resist is used, an alkaline component such as an ethylene diamine used for a paint on a wall of a clean room or an amine generated from HMDS (hexamethyldisilazane) used for a hydrophobic treatment is used as a resist. Contact with an acid in the vicinity of the surface of the film suppresses the catalytic reaction due to the acid and deteriorates the pattern shape. Therefore, in the coating / developing apparatus, a developing section and a heating section for performing a heat treatment as a pretreatment are arranged in a space surrounded by a housing, and an acid-added filter (called a chemical filter or the like) is used. Is provided above the space to allow clean air to flow through the filter, and a positive pressure is applied to the inside of the housing to prevent outside air from entering. Further, the hydrophobizing unit is designed so that the unit is covered with, for example, a cover so that the amine does not leak to the transport region of the substrate after exposure.

[0005]

However, if the substrate is contaminated due to some trouble in the transport area of the substrate after exposure due to some trouble, the expected pattern cannot be obtained, and if left as it is, the inspection is unsuccessful. The result is a pass, and the burden of reprocessing the substrate increases. Further, if the cause of the amine mixture is investigated after the pattern inspection result, the countermeasure will be delayed, the number of pattern defective substrates will increase, and as a result, the throughput will decrease.

The present invention has been made under such circumstances, and an object thereof is to provide a technique capable of promptly dealing with the case where amine is mixed in the transfer area or the processing area of the substrate. .

[0007]

According to a first aspect of the present invention, there is provided a hydrophobizing section for hydrophobizing a substrate with a gas containing an amine, a coating section for applying a resist to the hydrophobized substrate, A development processing unit for developing the exposed substrate and a substrate transfer region are provided in the housing, and the inside of the housing is kept at a positive pressure with respect to the coating / developing apparatus. A step of measuring with an amine concentration measuring unit, and a step of determining whether or not there is an abnormality in the differential pressure between the housing and the outside when the amine concentration measurement value measured in this step is equal to or higher than a preset set concentration Or a step of performing at least one of the steps of determining the state of the hydrophobization processing section by a defect detecting means, the operating method of the coating / developing apparatus.

According to a second aspect of the present invention, the invention of the first aspect is further embodied, and a hydrophobic treatment portion and a hydrophobic treatment for subjecting the substrate to a hydrophobic treatment with a gas containing an amine. A coating processing unit for coating a resist on the exposed substrate, a development processing unit for developing the exposed substrate, and a substrate transfer region are provided inside the housing, and the inside of the housing is kept at a positive pressure with respect to the outside. In a coating / developing apparatus equipped with a filter for preventing an amine from entering the housing from the outside, a first step of measuring the amine concentration in the housing by a amine concentration measuring unit during a hydrophobic treatment, A second step of measuring the amine concentration by the amine concentration measuring unit after a lapse of a predetermined time after finishing the hydrophobic treatment, and a measured value of the amine concentration in the first step is not less than a set value and the amine concentration in the second step. The measured value of When the value is lower than the value, it is recognized that there is a problem in the hydrophobization processing section, and when the measured values of the amine concentration in the first step and the second step are both above the set value, the case and the outside And at least one of determining whether or not there is an abnormality in the differential pressure and determining the state of the filter by the defect detecting means.

According to such an invention, the resist pattern
Immediately detects that an amine, which has a negative impact on the substrate, has entered the transfer area or processing area of the substrate, and determines whether the cause is, for example, a decrease in the positive pressure of the housing or a defect in the hydrophobization processing section. You can quickly predict or grasp, and then take prompt action.

According to the second aspect of the present invention, as a result of performing either of the determination of whether there is an abnormality in the differential pressure between the housing and the outside or the determination of the state of the filter by the defect detecting means, the result is normal. If so, the other determination may be performed. Further, when it is recognized that there is a defect in the hydrophobization processing unit, the condition of the hydrophobization processing unit may be determined by the defect detection unit to check whether or not there is a defect.

When it is recognized that there is a defect in the hydrophobization processing unit, when it is determined that the differential pressure between the housing and the outside is abnormal,
When the condition of the filter is determined to be defective by the defect detecting means, it is preferable to display that fact on the display unit. The malfunction detecting means for determining the state of the hydrophobizing unit is, for example, an amine concentration measuring unit having a gas sampling port near the hydrophobizing unit. Coating and development of the present invention
The device uses a gas containing amine to hydrophobize the substrate.
The hydrophobic processing section that performs the processing and the substrate that has been subjected to the hydrophobic processing are registered.
A coating processing unit for coating a strike and heat treatment of the substrate
A heat treatment section, a development treatment section for developing the exposed substrate,
And a transfer area for transferring the respective processing units and the substrate.
The enclosure surrounding the enclosure and the air provided outside
A ceiling part having a fan and a filter for taking in,
A plurality of gas sampling ports for sampling the air in the housing,
Amine concentration measuring unit for measuring the concentration of amine in the housing
And the gas sampling port is in the vicinity of the hydrophobic treatment section and
Provided in the transport area and near the blowing surface of the filter
It is characterized by In the present invention, the amine concentration
The tube of the gas sampling port of the measurement unit is, for example,
A valve that switches the air taken from the gas sampling port of
Have

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows an overall coating and developing system in which a coating and developing apparatus 100 used in an embodiment of a method for operating a coating and developing apparatus according to the present invention is connected to an exposure apparatus 200. FIG. 2 is a schematic perspective view, and FIG. 2 is a plan view showing the inside of this system. First, the overall configuration of this device will be briefly described. The coating / developing apparatus 100 serves as a carrier loading / unloading section for loading and unloading a wafer carrier (hereinafter simply referred to as “carrier”) C, which is a transport container holding a plurality of wafers W, which are, for example, 25 substrates, in a shelf shape. A loading / unloading stage 1, a processing unit 2 for coating and developing the wafer W, and a delivery unit for delivering the wafer W between the processing unit 2 and the loading / unloading stage 1. -Mum 11 and.

The processing section 2 has a main transfer arm 21 at the center.
Are provided, and shelves 22A and 22B are provided in front of and behind this main transfer arm (indicated by the direction when the back is seen from the loading / unloading stage 1 ).
These shelves 22A and 22B are configured by stacking a plurality of units, and as shown in FIG. 3, a heating unit 12 that heats a wafer, a cooling unit 13, and a wafer for aligning the units. It is assigned as the alignment unit 14, the hydrophobizing unit 3, and the delivery unit 15. Note that the unit allocation shown in FIG. 3 is for convenience of showing an image, and is not restricted to this allocation. As shown in FIG. 2, a shelf 22C similar to the shelves 22A and 22B may be provided so that it can slide along the guide rail GL.

On the right side of the main carrying arm 21, there are provided a developing unit 23 which forms two developing processing units on the upper stage side and two coating units 24 on the lower stage side. The main transfer arm 21 is configured to be movable up and down, rotatable about a vertical axis, and movable back and forth, and serves to transfer the wafer W between the units of the shelves 22A to 22C, the coating unit 24, and the developing unit 23. I have The coating / developing apparatus 100 includes an interface section 25, and the processing section 3 is connected to the exposure apparatus via the interface section 25. The interface section 25 includes a transfer arm 26 for transferring the wafer W between the transfer unit 15 of the shelf 22B and the exposure apparatus 200.

Next, a description will be given of a main part relating to the characteristic part of this embodiment. The ceiling 4 of the coating / developing apparatus 100 is provided with a filter 41, and is configured so that air outside the apparatus (air in the clean room) is taken in by a fan 42 and flows into the apparatus through the filter 41. There is. Therefore, a downflow of clean air is formed in the transfer area of the transfer arm 11, the processing section 2 and the interface section 25.

Although the filter 41 is schematically shown in FIG. 3, the filter 41 in which air flows to the processing section 2 and the interface section 25 is actually a cleaning filter for removing particles and an amine or ammonia. And a filter (chemical filter) to which an acid component has been added to remove an alkaline component such as.

A panel P1 is provided on the front side of the processing section 2 , a rear side (a boundary with the interface section 25) and a panel P1 on a rear side (a boundary with the exposure apparatus 200) of the interface section 25, respectively.
P2 and P3 are provided. The processing unit 3 is surrounded by a housing composed of the panels P1 and P2, a panel P4 that forms an exterior body of the device, and a ceiling portion 4, and the interface unit 25 includes the panels P2 and P3 and the exterior body of the device. It is surrounded by a casing made up of an eggplant panel P4 and a ceiling portion 4. The rotation speed of the fan 42 is set so that the inside of these casings has a positive pressure with respect to the outside of the casing (outside of the apparatus), for example, 0.02 mmH20 or more. The differential pressure between the inside and the outside of the housing is measured, for example, by the differential pressure measuring unit 5 provided on each side wall of the processing unit 2 and the interface unit 25 as shown in FIG.

Next, the structure of the hydrophobizing section 3 will be briefly described with reference to FIG.
The lid 31a is provided with a gas supply unit 32, which is a closed container composed of 1a and a lower container 31b. The gas supply unit 32 is connected to a gas supply source (not shown) via a gas supply pipe 33. 33a is a joint portion of the gas supply pipe. A wafer mounting table 34 is provided inside the lower container 31b, and an exhaust path 35 is formed around the wafer mounting table 34. The closed container 31 is covered with a cover body 36,
A wafer transfer port 38 that is opened and closed by a shutter 37 is formed in the body 36, and an exhaust pipe 39 is connected to the body 36.

In the hydrophobizing unit 3, the lid 31a is raised and the wafer W is loaded into the mounting table 34 via the transfer port 38. Then, the shutter 37 closes and the lid 3
1a is closed and a hygroscopic gas such as HM is fed from the gas supply unit 32.
The DS gas (hexamethyldisilazane gas) is supplied to the surface of the wafer W to remove the water content on the surface. This HM
Since the DS gas has an amine group, the inside of the closed container 31 is sufficiently exhausted so that it does not leak to the outside, and then the lid 31a.
Is opened, and the cover body 36 is also exhausted.

Here, the coating / developing apparatus 100 is a wafer W.
In the case where the resist to be coated on is a chemically amplified resist described in the section of "Prior Art", amine is disliked, and therefore an amine concentration measuring unit is provided. FIG. 5 shows an outline of the amine concentration measuring unit 6. That is, the circumference of a tube 61 made of a porous material such as "Teflon" is covered with a glass tube 62, and pure water 63 (hatched portion) is passed through the glass tube 62 to form a tube.
The air to be measured is sucked and taken in from the gas sampling port 60 on one end side of the tube 61 by a pump (not shown), and this air is dissolved in pure water through the hole of the tube 61. Then, this pure water is concentrated by a concentrating column (not shown), and a measuring means 65 composed of an ion chromatograph analyzer.
The concentration of the amine dissolved in pure is measured by, and the amine concentration in the atmosphere is calculated based on the intake amount.

In this embodiment, a plurality of gas sampling ports 60 are provided, and gas (air in this example) is sequentially sampled from each gas sampling port 60 by switching the valve V,
The amine concentration in the air is measured by the common measuring means 65. As the gas sampling port 60, a first gas sampling port 60A, a second gas sampling port 60B and a third gas sampling port 60C are prepared, and the first gas sampling port 60A is shown in FIGS. 2 and 3. And the third gas sampling port 60C
Further, in FIG. 4, the second gas sampling port 60C is indicated by a circle.

The first gas sampling port 60A is provided for the purpose of checking whether or not the amine exists in an allowable amount in the transfer region of the wafer W after the exposure and the processing region such as the heat treatment. It is provided at a plurality of locations that do not interfere with the transfer of the wafer W. The second gas sampling port 60B is for determining whether or not there is a defect in the hydrophobization processing unit 3,
For example, it is provided in the vicinity of the door 37 of the hydrophobizing unit 3 and in the vicinity of the joint 33 a of the gas supply pipe 33. The third gas sampling port 60C is for determining whether or not there is a defect in the filter 41, and is provided in the vicinity of the gas blowing surface of the filter 41 and the mounting portion of the filter 41. These gas sampling ports 60A, 60B and 6
The air sampled from 0C may be analyzed by separate measuring means instead of being measured by the common measuring means.

The measured value of the amine concentration contained in the air sampled from each gas sampling port 60A, 60B, 60C is
It is sent to the control unit 7 as shown in FIG. Although the number of the measuring means 65 is one in this example, in FIG. 6, the measuring means 65 is shown for each of the gas sampling ports 60A, 60B, and 60C for convenience, and the time-series data (measurement values) are divided in a plane. It is described.
The control unit 7 controls the second and third gas sampling ports 60B and 60C according to a predetermined program according to the amine concentration in the air taken in from the first gas sampling port 60A as described later.
The display unit 71 causes the display unit 71 to collect air from the chamber, recognize the differential pressure of the differential pressure measuring unit 5, or display a defect in each unit.

Next, the operation of the above embodiment will be described. First, the carrier C is loaded into the carrier loading / unloading stage 1 from the outside, and the wafer W is taken out of the carrier C by the delivery arm 11. The wafer W is transferred from the transfer arm 11 to the main transfer arm 21 via the transfer unit 15 of the shelf 22A, and further transferred to the shelf 22A.
(Or 22B, 22C) is sequentially transported to a predetermined treatment, for example, a hydrophobic treatment and a cooling treatment. The hydrophobic treatment is performed by the device shown in FIG. 4 as described above. Subsequently, the wafer W is coated with a chemically amplified resist by the coating unit 24, and is further heat-treated, and then sent from the delivery unit 15 of the shelf 22B to the exposure apparatus 200 via the interface section 25.

Wafer W exposed by exposure apparatus 200
Is returned to the processing section 2 by the reverse path, and the main transport arm 2
1 is carried to the developing unit 23 and subjected to development processing. More specifically, the wafer W is heated and cooled before the developing process. The developed wafer W is transferred to the transfer arm 11 by a route opposite to the above, and is returned to the original carrier C placed on the carrier loading / unloading stage 1.

A flow for measuring the amine concentration and recognizing a malfunction of the apparatus will be described with reference to FIG. First, for example, when the product wafer W is processed as described above, the control unit 7 collects air from the first gas sampling port 60A during the hydrophobizing process by the hydrophobizing unit 3 and causes the measuring unit 65 to measure the amine. The concentration is measured (step S1), and it is determined whether or not the preset concentration is, for example, 1 ppb or more in terms of atmosphere (step S2). If it is lower than 1 ppb, the device is regarded as normal and the amine concentration check is completed. Lower than 1 ppb means that the amine concentration in the air sampled from any of the first gas sampling ports 60A is 1 pp
It is lower than b. If it is 1 ppb or more,
When the hydrophobizing process is stopped (when not being performed)
Then, air is again sampled from the first gas sampling port 60A to measure the amine concentration (step S3), and it is determined whether the concentration is 1 ppb or more (step S4).

If the amine concentration is lower than 1 ppb, it is considered that there is a problem in the hydrophobization processing section 3. To confirm this, the second gas sampling port 60B near the hydrophobization processing section 2 is confirmed.
Air is collected from the sample to measure the amine concentration (step S
5) Determine whether it is 1 ppb or more (step S
6). If it is lower than 1 ppb, step S is performed at this stage.
Since the cause of the measurement result in 3 is not known and the cause of the malfunction of the measuring unit 65 is also considered, the flow ends for the time being. If it is 1 ppb or more, it is considered that a problem has occurred in the door 37 of the hydrophobization processing unit 3, and the display unit 7
A message indicating that the hydrophobization processing unit is defective is displayed in 1 (step S7).

On the other hand, in step S4, the amine concentration is 1 ppb.
If it is judged as above, it is judged whether or not the positive pressure degree measured by the differential pressure measuring unit 5 (the value obtained by subtracting the external atmospheric pressure from the atmospheric pressure inside the housing) is a predetermined value or more (step S8), If the value is greater than or equal to the value, it is unlikely that outside air will enter from the panel, and it is considered that the filter 41 has a defect. Therefore, in order to confirm this, air is sampled from the third gas sampling port 60C immediately below the filter 41 to measure the amine concentration (step S9), and it is determined whether it is 1 ppb or more (step S10). If it is lower than 1 ppb, the cause of the measurement result in step S3 is unknown at this stage, and a cause such as a malfunction of the measuring unit 65 may be considered. Therefore, the flow ends for the time being. If it is 1 ppb or more, filter 4
It is considered that there is a problem in the life of No. 1 and the mounting state, and the display unit 71 displays that the filter is defective (step S11). On the other hand, if the positive pressure is determined to be less than or equal to the predetermined value in step S8, the positive pressure abnormality is displayed on the display unit 71.
(Step S12).

According to such an embodiment, the invasion of amine, which adversely affects the resist pattern, is immediately detected, and the cause thereof is whether the positive pressure in the housing is lowered or whether the hydrophobic treatment section 3 is used. It is possible to quickly grasp whether it is due to a malfunction or the malfunction of the filter 41. Therefore, if it is recognized that the hydrophobizing unit 3 is defective, the looseness of the joint of the pipe or the tightness of the shutter-37 may be checked, and if it is recognized that the positive pressure is lowered, the mounting state of the panel may be checked. If it is recognized that the filter 41 is defective, the mounting state of the filter 41 or the like may be checked, and quick response can be taken. As a result, the generation of rejected products can be suppressed, and the operation efficiency of the device can be improved.

In the above, steps S5 to S
7 is a step of recognizing a defect in the hydrophobization processing section, and the step of measuring the amine concentration using the second gas sampling port 60B aims to confirm the defect in the hydrophobization processing section. Steps S5 and S6, which are confirmation steps, may be omitted, or may be performed after the display of the defect performed in step S7. The step S8 of checking the positive pressure inside the housing may be performed after the step of checking the defect of the filter 41 performed in steps S9 and S10, or may be performed in parallel.

Here, FIG. 8 shows the relationship between the measurement result of the amine concentration and the state of the apparatus expected based on this result, and the above-mentioned flow is prepared based on this correspondence. Further, in the present invention, the amine concentration may be monitored to determine the state of the apparatus by the flow shown in FIG. In the flow chart of FIG. 7, the first process is performed during the hydrophobic treatment.
While the amine concentration was measured using the gas sampling port 60A of FIG. 9, in the flow chart of FIG. 9, for example, the amine concentration was measured via the first gas sampling port 60A at regular time intervals, and the measurement was performed. The subsequent flow changes depending on whether or not the timing is during the hydrophobizing process, but it is the same as the flow in FIG. 7 in that the determination shown in FIG. 8 is performed.

That is, first, air is sampled from the first gas sampling port 60A to measure the amine concentration (step S1), and it is determined whether the timing is during the hydrophobic treatment or within a predetermined time after the hydrophobic treatment is completed. The determination is made (step S2). The reason for considering the predetermined time after completion of the hydrophobic treatment is that if a failure occurs in the hydrophobic treatment unit 3 and amine leaks from here, even if the shutter 37 is closed after completion of the hydrophobic treatment, the shutter is released. This is because the leaked amine diffused in the housing for a while when 37 was opened, and the time was taken into consideration. The predetermined time may be zero.

If "YES" is determined in the step S3, the subsequent steps S4 to S13 are the flow S of FIG.
The same as 3 to S12. If "NO" is determined in the step S2, it is determined whether or not the amine concentration is 1 ppb or more (step S14), and if it is 1 ppb or more, the hydrophobic treatment unit 3 is not the cause, and the panel mounting or the filter is performed. Since the problem of 41 is considered, the process proceeds to step 9. On the other hand, if it is lower than 1 ppb, air is sampled from the first gas sampling port 60A during the hydrophobic treatment to measure the amine concentration (step S15), and it is determined whether it is 1 ppb or more (step S16). If it is lower than 1 ppb, there is no abnormality and the flow is ended. If it is 1 ppb or higher, the process proceeds to step S6.

The substrate is not limited to a wafer, but may be a glass substrate for a liquid crystal display.

[0035]

As described above, according to the present invention, it is possible to promptly detect the invasion of amine, which adversely affects the resist pattern, and to take measures such as the investigation of the cause thereafter.

[Brief description of drawings]

FIG. 1 is a schematic perspective view showing an outline of a coating / developing apparatus used in an embodiment of the present invention.

FIG. 2 is a plan view showing the inside of a coating / developing apparatus used in the embodiment of the present invention.

FIG. 3 is a vertical sectional side view showing the inside of a coating / developing apparatus used in an embodiment of the present invention.

FIG. 4 is a vertical sectional side view showing a hydrophobizing unit.

FIG. 5 is a configuration diagram showing an amine concentration measuring unit.

FIG. 6 is an explanatory diagram showing a control system including a control unit for processing amine concentration measurement values and differential pressure measurement values.

FIG. 7 is a flowchart showing an example of a driving method of the present invention.

FIG. 8 is an explanatory diagram showing a correspondence relationship between the amine concentration measurement result and the state of the apparatus.

FIG. 9 is a flowchart showing another example of the driving method of the present invention.

[Explanation of symbols]

100 coating and developing device 200 exposure equipment 1 Carrier loading / unloading stage C carrier W semiconductor wafer 2 processing section 23 Application unit 24 Development unit 3 Hydrophobization processing section 31 airtight container 33 gas supply pipe 37 shutter 4 ceiling 41 Filter 5 Differential pressure measurement unit 60A-60C Gas sampling port 65 Measuring means 7 control unit 71 display

─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01L 21/027 G03F 7/16 502 G03F 7/30 502

Claims (10)

(57) [Claims] 1. A hydrophobization processing unit for hydrophobizing a substrate with a gas containing an amine, a coating processing unit for coating a resist on the hydrophobized substrate, and a development processing unit for developing the exposed substrate. A step of measuring the amine concentration in the housing by an amine concentration measuring unit in a coating and developing apparatus in which a transfer area for the substrate is provided in the housing and the inside of the housing is kept at a positive pressure with respect to the outside; When the amine concentration measurement value measured in the step becomes equal to or higher than a preset set concentration, the step of determining whether there is an abnormality in the differential pressure between the casing and the outside, or the state of the hydrophobizing section is defective. And a step of performing at least one of the steps of judging by the detecting means. 2. A hydrophobization processing unit for hydrophobizing a substrate with a gas containing amine, a coating processing unit for coating a resist on the hydrophobized substrate, and a development processing unit for developing the exposed substrate. And a substrate transfer region provided inside the housing, the inside of the housing being kept at a positive pressure with respect to the outside, and a coating and developing device provided with a filter for preventing the amine from entering the inside of the housing from the outside. In the first step of measuring the amine concentration in the housing by the amine concentration measuring section during the hydrophobic treatment, and the first step of measuring the amine concentration by the amine concentration measuring section after a predetermined time has elapsed after the hydrophobic treatment is completed. When the measured value of the amine concentration in the second step and the first step is equal to or higher than the set value and the measured value of the amine concentration in the second step is lower than the set value, it is recognized that there is a problem in the hydrophobization unit,
Further, when the measured values of the amine concentration in the first step and the second step are both set values or more, it is judged whether there is an abnormality in the differential pressure between the housing and the outside, or the condition of the filter is detected as a defect. And a step of performing at least one of judgment by means, and a method of operating a coating and developing apparatus. 3. If it is normal as a result of determining whether or not there is an abnormality in the differential pressure between the housing and the outside or determining the state of the filter by the malfunction detecting means, the other determination is made. The method of operating a coating / developing apparatus according to claim 2, wherein 4. The method according to claim 2, wherein when it is recognized that the hydrophobization processing section has a defect, the state of the hydrophobization processing section is judged by the defect detection means to confirm whether or not there is a defect. 3. The method for operating the coating and developing apparatus described in 3. 5. The method of operating a coating / developing apparatus according to claim 2, wherein when the hydrophobization processing portion is recognized to have a defect, the fact is displayed on the display portion. 6. The coating / developing apparatus according to claim 2, wherein when it is determined that the differential pressure between the housing and the outside is abnormal, a message to that effect is displayed on the display unit. Driving method. 7. The operation of the coating / developing apparatus according to any one of claims 2 to 6, wherein when the defect detecting means determines that the condition of the filter is defective, the fact is displayed on the display unit. Method. 8. The defect detecting means for determining the state of the hydrophobization processing section is an amine concentration measuring section having a gas sampling port near the hydrophobization processing section. The method of operating the coating and developing device as described in 1. 9. A substrate containing a gas containing amine is sparsely dispersed.
Hydrophobization treatment part that performs hydration treatment and substrate that has been hydrophobized
A coating treatment section for coating a resist on the substrate and a heating treatment for the substrate.
Heat treatment section for processing and development processing for developing the exposed substrate
In a coating and developing apparatus including a unit, a casing that surrounds each processing unit and a transfer region that transfers the substrate.
The body and this housing are provided to take in air outside the device.
A ceiling part having a fan and a filter; and a plurality of gas sampling ports for sampling the air in the housing,
Amine concentration measuring unit for measuring the concentration of amine in the housing
And the gas sampling port is located near the hydrophobic treatment section
Provided in the area and near the outlet surface of the filter
A coating and developing device characterized by the above. 10. The gas sampling of the amine concentration measuring unit
Mouth of the tube, is taken from the previous Symbol plurality of gas sampling port
Characterized by having a valve that switches air
The coating and developing apparatus according to claim 9.