CN108315713A - 石英容器镀覆碳膜的方法 - Google Patents
石英容器镀覆碳膜的方法 Download PDFInfo
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- CN108315713A CN108315713A CN201710029818.XA CN201710029818A CN108315713A CN 108315713 A CN108315713 A CN 108315713A CN 201710029818 A CN201710029818 A CN 201710029818A CN 108315713 A CN108315713 A CN 108315713A
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- plating carbon
- plating
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- quartz container
- room
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710029818.XA CN108315713B (zh) | 2017-01-17 | 2017-01-17 | 石英容器镀覆碳膜的方法 |
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CN201710029818.XA CN108315713B (zh) | 2017-01-17 | 2017-01-17 | 石英容器镀覆碳膜的方法 |
Publications (2)
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CN108315713A true CN108315713A (zh) | 2018-07-24 |
CN108315713B CN108315713B (zh) | 2020-04-28 |
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CN201710029818.XA Active CN108315713B (zh) | 2017-01-17 | 2017-01-17 | 石英容器镀覆碳膜的方法 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109652855A (zh) * | 2018-11-29 | 2019-04-19 | 中国电子科技集团公司第十研究所 | 石英舟熏碳方法及锑化铟提纯方法 |
CN110129766A (zh) * | 2019-06-11 | 2019-08-16 | 广东先导稀材股份有限公司 | 镀膜装置以及石英舟表面镀覆系统 |
CN113999981A (zh) * | 2021-11-02 | 2022-02-01 | 广东先导微电子科技有限公司 | 一种高纯金属真空升华的除杂方法 |
CN114250371A (zh) * | 2021-12-27 | 2022-03-29 | 广东先导微电子科技有限公司 | 一种高纯锑棒的制备方法 |
CN114635187A (zh) * | 2022-04-24 | 2022-06-17 | 安徽光智科技有限公司 | 低硅高纯锗材料的制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01225775A (ja) * | 1988-03-04 | 1989-09-08 | Toyo Sutoufuaa Chem:Kk | 管状材料内面に対するセラミック・コーティング膜の形成方法 |
CN1962933A (zh) * | 2006-10-23 | 2007-05-16 | 四川大学 | 晶体生长的石英坩埚镀碳膜方法与装置 |
CN101397651A (zh) * | 2008-10-30 | 2009-04-01 | 上海大学 | 一种CdZnTe晶体生长用石英安瓿内壁镀覆碳膜的方法及其装置 |
CN104831420A (zh) * | 2015-05-20 | 2015-08-12 | 中国人民解放军国防科学技术大学 | 一种渗硼氮化硅纤维的制备方法 |
CN105541412A (zh) * | 2016-01-27 | 2016-05-04 | 南京工程学院 | 一种C/C复合材料表面SiC纳米线增韧SiC陶瓷涂层的制备方法 |
-
2017
- 2017-01-17 CN CN201710029818.XA patent/CN108315713B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01225775A (ja) * | 1988-03-04 | 1989-09-08 | Toyo Sutoufuaa Chem:Kk | 管状材料内面に対するセラミック・コーティング膜の形成方法 |
CN1962933A (zh) * | 2006-10-23 | 2007-05-16 | 四川大学 | 晶体生长的石英坩埚镀碳膜方法与装置 |
CN101397651A (zh) * | 2008-10-30 | 2009-04-01 | 上海大学 | 一种CdZnTe晶体生长用石英安瓿内壁镀覆碳膜的方法及其装置 |
CN104831420A (zh) * | 2015-05-20 | 2015-08-12 | 中国人民解放军国防科学技术大学 | 一种渗硼氮化硅纤维的制备方法 |
CN105541412A (zh) * | 2016-01-27 | 2016-05-04 | 南京工程学院 | 一种C/C复合材料表面SiC纳米线增韧SiC陶瓷涂层的制备方法 |
Non-Patent Citations (1)
Title |
---|
李镇江 等: ""La或N掺杂SiC纳米线的制备、场发射性能及第一性原理计算"", 《物理化学学报》 * |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109652855A (zh) * | 2018-11-29 | 2019-04-19 | 中国电子科技集团公司第十研究所 | 石英舟熏碳方法及锑化铟提纯方法 |
CN110129766A (zh) * | 2019-06-11 | 2019-08-16 | 广东先导稀材股份有限公司 | 镀膜装置以及石英舟表面镀覆系统 |
CN110129766B (zh) * | 2019-06-11 | 2021-06-11 | 广东先导稀材股份有限公司 | 镀膜装置以及石英舟表面镀覆系统 |
CN113999981A (zh) * | 2021-11-02 | 2022-02-01 | 广东先导微电子科技有限公司 | 一种高纯金属真空升华的除杂方法 |
CN114250371A (zh) * | 2021-12-27 | 2022-03-29 | 广东先导微电子科技有限公司 | 一种高纯锑棒的制备方法 |
CN114250371B (zh) * | 2021-12-27 | 2023-08-22 | 广东先导微电子科技有限公司 | 一种高纯锑棒的制备方法 |
CN114635187A (zh) * | 2022-04-24 | 2022-06-17 | 安徽光智科技有限公司 | 低硅高纯锗材料的制备方法 |
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Publication number | Publication date |
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CN108315713B (zh) | 2020-04-28 |
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Effective date of registration: 20190531 Address after: 511517 27-9B, Guangdong Qingyuan hi tech Industrial Park Applicant after: Guangdong forerunner materials Limited by Share Ltd Address before: 511517 27-9B, Guangdong Qingyuan hi tech Industrial Park Applicant before: Qingyuan Xiandao Materials Co., Ltd. |
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Effective date of registration: 20211220 Address after: 511517 workshop a, No.16, Chuangxing Third Road, high tech Zone, Qingyuan City, Guangdong Province Patentee after: Guangdong lead Microelectronics Technology Co.,Ltd. Address before: 511517 27-9B, Guangdong Qingyuan hi tech Industrial Park Patentee before: FIRST SEMICONDUCTOR MATERIALS Co.,Ltd. |