CN108227373B - 用于压印光刻的流体滴落方法和装置 - Google Patents
用于压印光刻的流体滴落方法和装置 Download PDFInfo
- Publication number
- CN108227373B CN108227373B CN201711281189.6A CN201711281189A CN108227373B CN 108227373 B CN108227373 B CN 108227373B CN 201711281189 A CN201711281189 A CN 201711281189A CN 108227373 B CN108227373 B CN 108227373B
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- substrate
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- fluid dispensing
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- 239000012530 fluid Substances 0.000 title claims abstract description 309
- 238000000034 method Methods 0.000 title claims abstract description 61
- 238000001459 lithography Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 205
- 239000000463 material Substances 0.000 claims abstract description 118
- 238000013519 translation Methods 0.000 claims abstract description 50
- 230000007717 exclusion Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000011295 pitch Substances 0.000 description 69
- 238000009826 distribution Methods 0.000 description 23
- 230000007547 defect Effects 0.000 description 22
- 238000000203 droplet dispensing Methods 0.000 description 9
- 238000001125 extrusion Methods 0.000 description 9
- 238000011049 filling Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 238000001723 curing Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000005670 electromagnetic radiation Effects 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000002730 additional effect Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Coating Apparatus (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/375,966 US10634993B2 (en) | 2016-12-12 | 2016-12-12 | Fluid droplet methodology and apparatus for imprint lithography |
| US15/375,966 | 2016-12-12 | ||
| US15/375,912 | 2016-12-12 | ||
| US15/375,912 US10481491B2 (en) | 2016-12-12 | 2016-12-12 | Fluid droplet methodology and apparatus for imprint lithography |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108227373A CN108227373A (zh) | 2018-06-29 |
| CN108227373B true CN108227373B (zh) | 2022-02-08 |
Family
ID=62634796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711281189.6A Active CN108227373B (zh) | 2016-12-12 | 2017-12-07 | 用于压印光刻的流体滴落方法和装置 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP7079085B2 (enExample) |
| KR (1) | KR102205141B1 (enExample) |
| CN (1) | CN108227373B (enExample) |
| SG (1) | SG10201709153VA (enExample) |
| TW (1) | TWI715815B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10468247B2 (en) * | 2016-12-12 | 2019-11-05 | Canon Kabushiki Kaisha | Fluid droplet methodology and apparatus for imprint lithography |
| US11209730B2 (en) * | 2019-03-14 | 2021-12-28 | Canon Kabushiki Kaisha | Methods of generating drop patterns, systems for shaping films with the drop pattern, and methods of manufacturing an article with the drop pattern |
| US11762295B2 (en) | 2020-10-28 | 2023-09-19 | Canon Kabushiki Kaisha | Fluid droplet methodology and apparatus for imprint lithography |
| JP7610461B2 (ja) * | 2021-04-08 | 2025-01-08 | キヤノン株式会社 | インプリント装置、インプリント方法、物品の製造方法、決定方法、およびプログラム |
| CN120178595B (zh) * | 2025-05-20 | 2025-07-22 | 普雨科技(苏州)有限公司 | 一种步进式重复纳米压印设备、控制方法及控制系统 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010047758A1 (en) * | 2008-10-21 | 2010-04-29 | Molecular Imprints, Inc. | Robust optimization to generate drop patterns in imprint lithography |
| CN101900937A (zh) * | 2009-02-04 | 2010-12-01 | Asml荷兰有限公司 | 压印光刻方法和设备 |
| CN101990470A (zh) * | 2008-04-01 | 2011-03-23 | 分子制模股份有限公司 | 大面积辊子对辊子的刻印平版印刷 |
| CN102566300A (zh) * | 2010-11-22 | 2012-07-11 | Asml荷兰有限公司 | 定位系统、光刻设备和用于定位控制的方法 |
| JP2015213130A (ja) * | 2014-05-02 | 2015-11-26 | キヤノン株式会社 | インプリント装置、インプリント方法、および物品の製造方法 |
| CN105584030A (zh) * | 2014-11-11 | 2016-05-18 | 佳能株式会社 | 压印方法、压印设备、模具和产品制造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0533486B1 (en) * | 1991-09-19 | 1997-08-06 | Canon Kabushiki Kaisha | Serial recording system capable of varying resolution |
| US6536883B2 (en) | 2001-02-16 | 2003-03-25 | Eastman Kodak Company | Continuous ink-jet printer having two dimensional nozzle array and method of increasing ink drop density |
| JP3922177B2 (ja) * | 2002-02-12 | 2007-05-30 | セイコーエプソン株式会社 | 成膜方法、成膜装置、液滴吐出装置、カラーフィルタの製造方法、表示装置の製造方法 |
| US7559619B2 (en) * | 2002-08-20 | 2009-07-14 | Palo Alto Research Center Incorporated | Digital lithography using real time quality control |
| JP4168788B2 (ja) | 2003-03-06 | 2008-10-22 | セイコーエプソン株式会社 | 成膜方法、カラーフィルタ基板の製造方法、エレクトロルミネッセンス装置用基板の製造方法、表示装置の製造方法 |
| JP4337586B2 (ja) | 2004-03-10 | 2009-09-30 | セイコーエプソン株式会社 | 光学被膜の形成方法及びその方法で製造された光学物品 |
| US8001924B2 (en) | 2006-03-31 | 2011-08-23 | Asml Netherlands B.V. | Imprint lithography |
| US8707890B2 (en) * | 2006-07-18 | 2014-04-29 | Asml Netherlands B.V. | Imprint lithography |
| JP4908369B2 (ja) | 2007-10-02 | 2012-04-04 | 株式会社東芝 | インプリント方法及びインプリントシステム |
| JP5495767B2 (ja) | 2009-12-21 | 2014-05-21 | キヤノン株式会社 | インプリント装置及び方法、並びに物品の製造方法 |
| JP2012015324A (ja) * | 2010-06-30 | 2012-01-19 | Fujifilm Corp | 液体塗布装置及び液体塗布方法並びにナノインプリントシステム |
| JP5748291B2 (ja) | 2012-02-29 | 2015-07-15 | 富士フイルム株式会社 | 液体吐出装置、ナノインプリントシステム及び液体吐出方法 |
| JP6135119B2 (ja) | 2012-12-19 | 2017-05-31 | 大日本印刷株式会社 | インプリント方法、インプリント樹脂滴下位置決定方法及びインプリント装置 |
-
2017
- 2017-11-07 SG SG10201709153VA patent/SG10201709153VA/en unknown
- 2017-11-13 TW TW106139141A patent/TWI715815B/zh active
- 2017-12-04 KR KR1020170164864A patent/KR102205141B1/ko active Active
- 2017-12-07 CN CN201711281189.6A patent/CN108227373B/zh active Active
- 2017-12-08 JP JP2017236264A patent/JP7079085B2/ja active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101990470A (zh) * | 2008-04-01 | 2011-03-23 | 分子制模股份有限公司 | 大面积辊子对辊子的刻印平版印刷 |
| WO2010047758A1 (en) * | 2008-10-21 | 2010-04-29 | Molecular Imprints, Inc. | Robust optimization to generate drop patterns in imprint lithography |
| CN101900937A (zh) * | 2009-02-04 | 2010-12-01 | Asml荷兰有限公司 | 压印光刻方法和设备 |
| CN102566300A (zh) * | 2010-11-22 | 2012-07-11 | Asml荷兰有限公司 | 定位系统、光刻设备和用于定位控制的方法 |
| JP2015213130A (ja) * | 2014-05-02 | 2015-11-26 | キヤノン株式会社 | インプリント装置、インプリント方法、および物品の製造方法 |
| CN105584030A (zh) * | 2014-11-11 | 2016-05-18 | 佳能株式会社 | 压印方法、压印设备、模具和产品制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2018098506A (ja) | 2018-06-21 |
| TWI715815B (zh) | 2021-01-11 |
| KR20180067415A (ko) | 2018-06-20 |
| CN108227373A (zh) | 2018-06-29 |
| SG10201709153VA (en) | 2018-07-30 |
| JP7079085B2 (ja) | 2022-06-01 |
| KR102205141B1 (ko) | 2021-01-20 |
| TW201833668A (zh) | 2018-09-16 |
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