CN107658342B - 非对称的屏蔽栅mosfet结构及其制备方法 - Google Patents
非对称的屏蔽栅mosfet结构及其制备方法 Download PDFInfo
- Publication number
- CN107658342B CN107658342B CN201710997761.2A CN201710997761A CN107658342B CN 107658342 B CN107658342 B CN 107658342B CN 201710997761 A CN201710997761 A CN 201710997761A CN 107658342 B CN107658342 B CN 107658342B
- Authority
- CN
- China
- Prior art keywords
- groove
- unit cell
- base region
- type
- conductive type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 138
- 229920005591 polysilicon Polymers 0.000 claims description 85
- 239000002184 metal Substances 0.000 claims description 38
- 229910052751 metal Inorganic materials 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 36
- 238000005530 etching Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 230000015556 catabolic process Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- -1 and of course Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710997761.2A CN107658342B (zh) | 2017-10-24 | 2017-10-24 | 非对称的屏蔽栅mosfet结构及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710997761.2A CN107658342B (zh) | 2017-10-24 | 2017-10-24 | 非对称的屏蔽栅mosfet结构及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107658342A CN107658342A (zh) | 2018-02-02 |
CN107658342B true CN107658342B (zh) | 2020-06-30 |
Family
ID=61119443
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710997761.2A Active CN107658342B (zh) | 2017-10-24 | 2017-10-24 | 非对称的屏蔽栅mosfet结构及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107658342B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10125268C1 (de) * | 2001-05-23 | 2002-08-29 | Infineon Technologies Ag | Vertikaler MOS-Transistor mit einer Druchbruchstruktur und Verfahren zu dessen Herstellung |
US6768168B1 (en) * | 1995-03-14 | 2004-07-27 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate semiconductor device with low on voltage and manufacturing method thereof |
CN1967868A (zh) * | 2005-11-14 | 2007-05-23 | 三菱电机株式会社 | 半导体装置及其制造方法 |
CN101375400A (zh) * | 2006-02-17 | 2009-02-25 | 万国半导体股份有限公司 | 保护栅极沟槽式金属氧化物半导体场效应晶体管组件及其制造方法 |
CN104022043A (zh) * | 2014-06-16 | 2014-09-03 | 中航(重庆)微电子有限公司 | 带有分裂栅的沟槽式功率mosfet及制备方法 |
-
2017
- 2017-10-24 CN CN201710997761.2A patent/CN107658342B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6768168B1 (en) * | 1995-03-14 | 2004-07-27 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate semiconductor device with low on voltage and manufacturing method thereof |
DE10125268C1 (de) * | 2001-05-23 | 2002-08-29 | Infineon Technologies Ag | Vertikaler MOS-Transistor mit einer Druchbruchstruktur und Verfahren zu dessen Herstellung |
CN1967868A (zh) * | 2005-11-14 | 2007-05-23 | 三菱电机株式会社 | 半导体装置及其制造方法 |
CN101375400A (zh) * | 2006-02-17 | 2009-02-25 | 万国半导体股份有限公司 | 保护栅极沟槽式金属氧化物半导体场效应晶体管组件及其制造方法 |
CN104022043A (zh) * | 2014-06-16 | 2014-09-03 | 中航(重庆)微电子有限公司 | 带有分裂栅的沟槽式功率mosfet及制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN107658342A (zh) | 2018-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN111933710B (zh) | 碳化硅器件的元胞结构、其制备方法及碳化硅器件 | |
US7923804B2 (en) | Edge termination with improved breakdown voltage | |
US8735249B2 (en) | Trenched power semiconductor device and fabrication method thereof | |
CN107342326B (zh) | 一种降低导通电阻的功率半导体器件及制造方法 | |
US20190280119A1 (en) | Super junction power transistor and preparation method thereof | |
CN107403839B (zh) | 适用于深沟槽的功率半导体器件结构及制造方法 | |
KR20130031205A (ko) | 반도체 장치 및 그 제조 방법 | |
CN107611179A (zh) | 降低栅源电容的屏蔽栅mosfet结构及其制备方法 | |
CN108091685A (zh) | 一种提高耐压的半超结mosfet结构及其制备方法 | |
CN114038914A (zh) | 双重耐压半导体功率器件及其制备方法 | |
CN110676306B (zh) | 低emi深沟槽隔离平面功率半导体器件及其制备方法 | |
CN114023821B (zh) | 超级结器件及其制造方法 | |
WO2021068420A1 (zh) | 沟槽型场效应晶体管结构及其制备方法 | |
CN107731926B (zh) | 提高耐压范围的mosfet器件及其制备方法 | |
CN107799602A (zh) | 能节省终端面积的屏蔽栅mosfet器件及其制备方法 | |
CN107731908B (zh) | 提高耐压的屏蔽栅mosfet结构及其制备方法 | |
CN110600454B (zh) | 低emi深沟槽隔离沟槽型功率半导体器件及其制备方法 | |
CN112864250A (zh) | 改善栅漏电荷的沟槽型功率半导体器件及其制备方法 | |
EP4336561A1 (en) | Insulated gate bipolar transistor with super junction structure, and preparation method therefor | |
CN107658342B (zh) | 非对称的屏蔽栅mosfet结构及其制备方法 | |
CN112635331B (zh) | 一种超级结功率器件的制备方法 | |
WO2021232802A1 (zh) | Igbt器件及其制备方法 | |
KR102246501B1 (ko) | 반도체 전력 소자 | |
CN113097297A (zh) | 功率器件结构及制作方法 | |
CN113809148A (zh) | 功率元件及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20200429 Address after: 550081 Guizhou city of Guiyang Province Lake District Forest City West Morgan center A block 10 layer A-10-003 Applicant after: GUIZHOU MARCHING POWER TECHNOLOGY CO.,LTD. Applicant after: Nanjing Xinchangzheng Technology Co.,Ltd. Address before: 550081 Guizhou city of Guiyang Province Lake District Forest City West Morgan center A block 10 layer A-10-003 Applicant before: GUIZHOU MARCHING POWER TECHNOLOGY Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 210000 room 1106-3, No. 62, Suyuan Avenue, Jiangning Development Zone, Nanjing, Jiangsu Province (Jiangning Development Zone) Patentee after: Jiangsu xinchangzheng microelectronics Group Co.,Ltd. Patentee after: Nanjing Xinchangzheng Technology Co.,Ltd. Address before: 550081 A-10-003, 10th floor, Morgan Center, Lincheng West Road, Guanshan Lake District, Guiyang City, Guizhou Province Patentee before: GUIZHOU MARCHING POWER TECHNOLOGY CO.,LTD. Patentee before: Nanjing Xinchangzheng Technology Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 210000 room 1106-3, No. 62, Suyuan Avenue, Jiangning Development Zone, Nanjing, Jiangsu Province (Jiangning Development Zone) Patentee after: Jiangsu Chip Long March Microelectronics Group Co.,Ltd. Patentee after: Nanjing Xinchangzheng Technology Co.,Ltd. Address before: 210000 room 1106-3, No. 62, Suyuan Avenue, Jiangning Development Zone, Nanjing, Jiangsu Province (Jiangning Development Zone) Patentee before: Jiangsu xinchangzheng microelectronics Group Co.,Ltd. Patentee before: Nanjing Xinchangzheng Technology Co.,Ltd. |