CN107591355B - 具有防止电弧和点火并改善工艺均匀性的特征的静电卡盘 - Google Patents
具有防止电弧和点火并改善工艺均匀性的特征的静电卡盘 Download PDFInfo
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- CN107591355B CN107591355B CN201710544961.2A CN201710544961A CN107591355B CN 107591355 B CN107591355 B CN 107591355B CN 201710544961 A CN201710544961 A CN 201710544961A CN 107591355 B CN107591355 B CN 107591355B
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- 238000000034 method Methods 0.000 title abstract description 35
- 230000008569 process Effects 0.000 title abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 174
- 239000000919 ceramic Substances 0.000 claims abstract description 165
- 238000012545 processing Methods 0.000 claims abstract description 42
- 238000012546 transfer Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 15
- 230000007704 transition Effects 0.000 claims description 15
- 239000000945 filler Substances 0.000 claims description 14
- 239000007789 gas Substances 0.000 description 36
- 238000010438 heat treatment Methods 0.000 description 11
- 239000002826 coolant Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 230000004907 flux Effects 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 4
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000013536 elastomeric material Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- -1 oxides Substances 0.000 description 1
- 230000010399 physical interaction Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662359405P | 2016-07-07 | 2016-07-07 | |
| US62/359,405 | 2016-07-07 | ||
| US15/634,365 | 2017-06-27 | ||
| US15/634,365 US11069553B2 (en) | 2016-07-07 | 2017-06-27 | Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107591355A CN107591355A (zh) | 2018-01-16 |
| CN107591355B true CN107591355B (zh) | 2023-09-08 |
Family
ID=60911098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710544961.2A Active CN107591355B (zh) | 2016-07-07 | 2017-07-06 | 具有防止电弧和点火并改善工艺均匀性的特征的静电卡盘 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11069553B2 (enExample) |
| JP (1) | JP7062383B2 (enExample) |
| KR (1) | KR102454532B1 (enExample) |
| CN (1) | CN107591355B (enExample) |
| TW (1) | TWI752051B (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10340171B2 (en) | 2016-05-18 | 2019-07-02 | Lam Research Corporation | Permanent secondary erosion containment for electrostatic chuck bonds |
| US11069553B2 (en) * | 2016-07-07 | 2021-07-20 | Lam Research Corporation | Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity |
| US10910195B2 (en) | 2017-01-05 | 2021-02-02 | Lam Research Corporation | Substrate support with improved process uniformity |
| CN108649012B (zh) * | 2018-05-11 | 2021-10-01 | 北京华卓精科科技股份有限公司 | 新型陶瓷塞及具有该新型陶瓷塞的静电卡盘装置 |
| JP6703645B2 (ja) * | 2018-05-28 | 2020-06-03 | 日本特殊陶業株式会社 | 保持装置、および、保持装置の製造方法 |
| KR102447586B1 (ko) * | 2018-05-28 | 2022-09-26 | 니뽄 도쿠슈 도교 가부시키가이샤 | 유지 장치의 제조 방법, 및, 유지 장치 |
| US11133211B2 (en) * | 2018-08-22 | 2021-09-28 | Lam Research Corporation | Ceramic baseplate with channels having non-square corners |
| KR102752849B1 (ko) | 2018-11-30 | 2025-01-10 | 소니그룹주식회사 | 표시 장치 |
| JP7541005B2 (ja) * | 2018-12-03 | 2024-08-27 | アプライド マテリアルズ インコーポレイテッド | チャックとアーク放電に関する性能が改良された静電チャック設計 |
| CN111627790B (zh) | 2019-02-27 | 2024-05-03 | Toto株式会社 | 半导体制造装置构件、半导体制造装置、显示器制造装置 |
| JP6801773B2 (ja) * | 2019-02-27 | 2020-12-16 | Toto株式会社 | 半導体製造装置用部材および半導体製造装置用部材を備えた半導体製造装置並びにディスプレイ製造装置 |
| CN113544837A (zh) * | 2019-03-08 | 2021-10-22 | 朗姆研究公司 | 用于等离子体处理室的卡盘 |
| CN115280485A (zh) * | 2020-03-13 | 2022-11-01 | 朗姆研究公司 | 包括用于衬底处理系统的间柱阵列的接合层的衬底支撑件 |
| KR102817778B1 (ko) * | 2020-04-29 | 2025-06-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 균일성 개선을 위한 히터 커버 플레이트 |
| CN115151105B (zh) * | 2022-07-13 | 2024-07-30 | 业成科技(成都)有限公司 | 贴合治具 |
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| JP2008042139A (ja) * | 2006-08-10 | 2008-02-21 | Tokyo Electron Ltd | 静電チャック装置 |
| JP2008042117A (ja) * | 2006-08-10 | 2008-02-21 | Tokyo Electron Ltd | プラズマ処理装置用の載置台及びプラズマ処理装置 |
| CN101278368A (zh) * | 2005-09-30 | 2008-10-01 | 朗姆研究公司 | 具有变化厚度、轮廓和/或形状的介电材料和/或空腔的静电卡盘组件、其使用方法及结合有其的装置 |
| CN103069550A (zh) * | 2010-12-22 | 2013-04-24 | 诺发系统公司 | 半导体衬底的密度可变等离子体处理 |
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| Publication number | Publication date |
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| JP2018014492A (ja) | 2018-01-25 |
| KR20180006307A (ko) | 2018-01-17 |
| CN107591355A (zh) | 2018-01-16 |
| JP7062383B2 (ja) | 2022-05-06 |
| TW201812982A (zh) | 2018-04-01 |
| KR102454532B1 (ko) | 2022-10-13 |
| US20180012785A1 (en) | 2018-01-11 |
| TWI752051B (zh) | 2022-01-11 |
| US11069553B2 (en) | 2021-07-20 |
| KR102454532B9 (ko) | 2023-03-13 |
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