CN107452742A - 半导体强电介质存储元件的制造方法和半导体强电介质存储晶体管 - Google Patents
半导体强电介质存储元件的制造方法和半导体强电介质存储晶体管 Download PDFInfo
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- CN107452742A CN107452742A CN201710265559.0A CN201710265559A CN107452742A CN 107452742 A CN107452742 A CN 107452742A CN 201710265559 A CN201710265559 A CN 201710265559A CN 107452742 A CN107452742 A CN 107452742A
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- strong dielectric
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- 238000000034 method Methods 0.000 title claims abstract description 104
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 52
- 238000000137 annealing Methods 0.000 claims abstract description 158
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 109
- 239000001301 oxygen Substances 0.000 claims abstract description 109
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 102
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 78
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 10
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/02356—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
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KR20190115508A (ko) * | 2018-03-15 | 2019-10-14 | 에스케이하이닉스 주식회사 | 강유전성 메모리 장치 |
US10879391B2 (en) * | 2019-05-07 | 2020-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wakeup-free ferroelectric memory device |
KR20210014017A (ko) | 2019-07-29 | 2021-02-08 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
US11139315B2 (en) * | 2019-10-31 | 2021-10-05 | Qualcomm Incorporated | Ferroelectric transistor |
US11227933B2 (en) * | 2020-03-31 | 2022-01-18 | Taiwan Semiconductor Manufacturing Company Limited | Ferroelectric field effect transistor using charge trapping band misalignment and methods of forming the same |
KR20210143046A (ko) * | 2020-05-19 | 2021-11-26 | 삼성전자주식회사 | 산화물 반도체 트랜지스터 |
US11569382B2 (en) * | 2020-06-15 | 2023-01-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of fabricating the same |
US20210399136A1 (en) * | 2020-06-18 | 2021-12-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
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US20200279927A1 (en) | 2020-09-03 |
EP3236487A3 (en) | 2018-05-16 |
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US11335783B2 (en) | 2022-05-17 |
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