CN107425100A - 发光元件 - Google Patents

发光元件 Download PDF

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CN107425100A
CN107425100A CN201710679583.9A CN201710679583A CN107425100A CN 107425100 A CN107425100 A CN 107425100A CN 201710679583 A CN201710679583 A CN 201710679583A CN 107425100 A CN107425100 A CN 107425100A
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conducting shell
layer
electrode structure
light
emitting component
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CN107425100B (zh
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郭得山
柯竣腾
涂均祥
邱柏顺
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Epistar Corp
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Abstract

本发明公开一种发光元件，包含：一基板；一半导体叠层包含一第一半导体层在基板上，一主动层在第一半导体层上，以及一第二半导体层在主动层上；以及一电极结构在第二半导体层上，其中电极结构包含一打线层，一传导层以及一第一阻障层位于打线层及传导层之间，其中，传导层的标准氧化电位高于打线层的标准氧化电位。

Description

发光元件
本发明是中国发明专利申请(申请号：201310534722.0，申请日：2013年11月1日，发明名称：发光元件)的分案申请。
技术领域
本发明涉及具有较佳的电极结构的发光元件用以提升发光元件的可靠度。
背景技术
当发光效率提升且制造成本降低后，以固态照明取代传统照明的梦想预期不久即将实现。现阶段发光二极管的内部发光效率约为50％到80％之间，但是部分的光发出后被电极及发光层吸收，导致总体出光效率降低。因此，衍生出在电极下设置反射层来解决这个问题。当从发光层发出的光线行经的路径被电极挡住的时候，反射层可反射而非吸收光线。另外，电极具有一打线垫用以后续的封装打线用，打线垫通常由金所制成。由于金的价格很高，导致电极的成本增加。
发明内容
为解决上述问题，本发明提供一发光元件，包含：一基板；一半导体叠层包含一第一半导体层在基板上，一主动层在第一半导体层上，以及一第二半导体层在主动层上；以及一电极结构在第二半导体层上，其中电极结构包含一打线层，一传导层以及一第一阻障层位于打线层及传导层之间，其中，传导层的标准氧化电位高于打线层的标准氧化电位。
附图说明
图1A是显示本发明一水平式发光元件的示意图；
图1B是显示本发明一垂直式发光元件的示意图；
图2是显示根据本发明第一实施例的电极结构的示意图；
图3A是显示根据本发明第二实施例的电极结构的示意图；
图3B是显示本发明电极结构8的详细结构的扫描电子显微镜(SEM)图；
图4是显示根据本发明第三实施例的电极结构。
符号说明
1 水平式发光元件 72 反射层
10 基板 73 粘着层
11 第一半导体层 74 第二阻障层
12 主动层 75 第一阻障层
13 第二半导体层 76 传导层
14 透明导电氧化层 761 第一传导层
S1 表面 762 第二传导层
S2 表面 763 第三传导层
2 垂直式发光元件 77 第一隔绝层
21 导电基板 78 第二隔绝层
61 第一电极 8 电极结构
62 第二电极 9 电极结构
63 第三电极 A 边界区
7 电极结构 B 边界区
71 打线层 C 中央区
具体实施方式
为让本发明的上述特征和优点能更明显易懂，下文特举实施例，并配合所附附图作详细说明如下。在附图或说明中，相似或相同的部分是使用相同的标号，并且在附图中，元件的形状或厚度可扩大或缩小。需特别注意的是，图中未绘示或描述的元件，可以是熟习此技术的人士所知的形式。
图1A是显示一水平式发光元件1包含一基板10；一第一半导体层11具有一第一极性，例如n型氮化镓(GaN)层，在基板10上；一主动层12具有一结构，例如以氮化铟镓(InGaN)为基础的多重量子井(MQW)结构，在第一半导体层11上；一第二半导体层13具有一第二极性，例如p型半导体层，在主动层12上；一透明导电氧化层14包含一第一金属材料，例如氧化铟锡(ITO)，位于第二半导体层13上；第一半导体层11露出表面S2未被主动层12及第二半导体层13覆盖；一第一电极61位于表面S2上；一第二电极62位于透明导电氧化层14的表面S1上。基板10可为一绝缘基板，例如蓝宝石基板。
图1B是本发明另一实施例的一垂直式发光元件2。发光元件2包含一导电基板21，设置一第三电极63及第二电极62在导电基板21的相对两侧。导电基板21包含一导电材料，例如铜(Cu)、铝(Al)、铟(In)、锡(Sn)、锌(Zn)、钨(W)或其组合，或半导体材料，例如硅(Si)、碳化硅(SiC)、氮化镓(GaN)、砷化镓(GaAs)等。
第一半导体层11、主动层12以及第二半导体层13的材料包含Ⅲ-Ⅴ族化合物半导体，例如磷化镓(GaP)、砷化镓(GaAs)或者氮化镓(GaN)。第一半导体层11、主动层12以及第二半导体层13可使用现有的外延方法制造，例如有机金属化学气相沉积法(MOCVD)、分子束沉积法(MBE)或者氢化物气相沉积法(HVPE)。
透明导电氧化层14的材料包含透明导电氧化材料，例如氧化铟锡(ITO)、镉锡氧化物(CTO)、锑氧化锡、氧化铟锌、氧化锌铝、氧化锌或锌锡氧化物。透明导电氧化层14以一预定的厚度形成，例如小于3000埃可通过蒸镀沉积的方法，于接近室温，氮气环境及压力在1×10-4托(Torr)及1×10-2托(Torr)之间，较佳为接近5×10-3托(Torr)的腔体环境下。
第一实施例
图2是显示一电极结构7，电极结构7为根据第一实施例的第一电极61、第二电极62及第三电极63的详细结构。电极结构7包含一打线层71用以接合打线，一传导层76位于打线层71之下，一反射层72位于传导层76之下用以反射从主动层12所发出的光线，一粘着层73用以增加反射层72与透明导电氧化层14或者第一半导体层11之间的粘着力，一第二阻障层74位于传导层76与反射层72之间，用以将传导层76与反射层72区隔开避免相互接触，以及一第一阻障层75位于打线层71及传导层76之间，用以将传导层76及打线层71区隔开避免相互接触。
打线层71包含一第一金属，例如金(Au)。打线层71的厚度介于之间，较佳的是介于之间。传导层76包含一第二金属不同于第一金属，第二金属可为铝(Al)、银(Ag)或铜(Cu)。第二金属的导电率与第一金属的导电率的比值为介于0.1～10之间。第一金属的化学性质比第二金属的化学性质稳定，或者是说第二金属的标准氧化电位比第一金属的标准氧化电位高。传导层76的厚度与打线层71的厚度的比值介于0.1～10之间。传导层76的厚度是依流经电极结构7的驱动电流值来决定。当打线层71的导电率小于传导层76的导电率时，以低至中驱动电流注入电极结构7，例如120mA～300mA的驱动电流，传导层76的厚度与电极结构7的总厚度具有一第一比值介于0.3～0.5之间。传导层76与打线层71的加总厚度为电极结构7的总厚度的0.4～0.7倍。当打线层71的导电率小于传导层76的导电率时，以高驱动电流注入电极结构7，例如350mA～1000mA的驱动电流，传导层76的厚度与电极结构7的总厚度具有一第二比值介于0.5～0.8之间，且第二比值大于第一比值。传导层76与打线层71的总厚度约为电极结构7的总厚度的0.6～0.9倍。当打线层71的导电率大于传导层76的导电率时，以低至中驱动电流注入电极结构7，例如120mA～300mA的驱动电流，传导层76的厚度与电极结构7的总厚度具有一第三比值介于0.4～0.7之间，或者传导层76与打线层71的总厚度约为电极结构7的总厚度的0.5～0.8倍。当打线层71的导电率大于传导层76的导电率的时候，以高驱动电流注入电极结构7，例如350mA～1000mA的驱动电流，传导层76的厚度与电极结构7的总厚度具有一第四比值大于第三比值，介于0.55～0.85之间。传导层76与打线层71的总厚度约为电极结构7的总厚度的0.75～0.95倍。反射层72包含对于主动层12发出的光反射率大于80％的金属，例如铝(Al)或银(Ag)。反射层72的厚度较佳的是介于之间。
第二阻障层74用来将反射层72及传导层76区隔开，以避免传导层76及反射层72的材料在两者之间交互扩散，同时第二阻障层74在传导层76及反射层72之间可形成低接触电阻并增加粘着力。第二阻障层74包含一第三金属层及一第四金属层位于第三金属层上，其中第四金属层包含的材料与第三金属层相异。在另一实施例中，第二阻障层74包含多个第三金属层以及多个第四金属层互相交叠，例如钛(Ti)/铂(Pt)/钛(Ti)/铂(Pt)或者钛(Ti)/铂(Pt)/钛(Ti)/铂(Pt)/钛(Ti)/铂(Pt)。第三金属层较佳的是比第四金属层厚1倍到3倍。第三金属层的厚度介于之间，第四金属层的厚度介于之间。第三金属层与第四金属层各包含一材料选自铬(Cr)、铂(Pt)、钛(Ti)、钛钨(TiW)、钨(W)及锌(Zn)的群组。因此，第二阻障层74包含至少两种材料选自铬(Cr)/铂(Pt)、铬(Cr)/钛(Ti)、铬(Cr)/钛钨(TiW)、铬(Cr)/钨(W)、铬(Cr)/锌(Zn)、钛(Ti)/铂(Pt)、钛(Ti)/钨(W)、钛(Ti)/钛钨(TiW)、钛(Ti)/钨(W)、钛(Ti)/锌(Zn)、铂(Pt)/钛钨(TiW)、铂(Pt)/钨(W)、铂(Pt)/锌(Zn)、钛钨(TiW)/钨(W)、钛钨(TiW)/锌(Zn)及钨(W)/锌(Zn)的群组。第一阻障层75用来将打线层71及传导层76区隔开，以避免传导层76及打线层71的材料在两者之间交互扩散，同时第一阻障层75在传导层76及打线层71之间可形成低接触电阻并增加粘着力。第一阻障层75包含一第一金属层及一第二金属层位于第一金属层上，其中第一金属层包含的材料与第二金属层相异。在另一实施例中，第一阻障层75包含多个第一金属层以及多个第二金属层互相交叠，例如钛(Ti)/铂(Pt)/钛(Ti)/铂(Pt)或者钛(Ti)/铂(Pt)/钛(Ti)/铂(Pt)/钛(Ti)/铂(Pt)。第一金属层较佳的是比第二金属层厚1倍到3倍。第一金属层的厚度介于之间，第二金属层的厚度介于之间。第一金属层与第二金属层各包含一材料选自铬(Cr)、铂(Pt)、钛(Ti)、钛钨(TiW)、钨(W)及锌(Zn)的群组。因此，第一阻障层75包含至少两种材料选自铬(Cr)/铂(Pt)、铬(Cr)/钛(Ti)、铬(Cr)/钛钨(TiW)、铬(Cr)/钨(W)、铬(Cr)/锌(Zn)、钛(Ti)/铂(Pt)、钛(Ti)/钨(W)、钛(Ti)/钛钨(TiW)、钛(Ti)/钨(W)、钛(Ti)/锌(Zn)、铂(Pt)/钛钨(TiW)、铂(Pt)/钨(W)、铂(Pt)/锌(Zn)、钛钨(TiW)/钨(W)、钛钨(TiW)/锌(Zn)及钨(W)/锌(Zn)的群组。粘着层73用以提升反射层72与透明导电氧化层14或第一半导体层11之间的粘着力。粘着层73较佳的包含铬(Cr)或铑(Rh)。粘着层73的厚度较佳的是介于之间，使得粘着层73薄得足以让主动层12发出的光线穿透。
对于反射层72、第二阻障层74、传导层76、第一阻障层75以及打线层71，每一层的厚度在边界区A或B小于在中央区C。电极结构7的形状近似于梯形，或者较佳的是一非对称的梯型具有两相对、不同斜率的斜边。
第二实施例
图3A是显示根据第二实施例的一电极结构8的第一电极61、第二电极62及第三电极63的详细结构。图3B是显示电极结构8的详细结构的扫描电子显微镜(SEM)图。图3A的电极结构8与图2的电极结构7的差异在于电极结构7的传导层76分成第一传导层761及第二传导层762两部分，一第一隔绝层77位于第一传导层761及第二传导层762之间，当高驱动电流注入电极结构8的时候，以降低电子迁移效应造成第一传导层761及第二传导层762向外扩散至打线层71或者反射层72的情形。第一传导层761以及第二传导层762实质上包含相同的材料，第一传导层761的厚度与第二传导层762的厚度相同或为相同的数量级。第一隔绝层77包含一材料相异于第一传导层761以及第二传导层762的材料。第一隔绝层77包含单一金属层选自一群组包括铬(Cr)、铂(Pt)、钛(Ti)、钛钨(TiW)、钨(W)以及锌(Zn)。
对于反射层72、第二阻障层74、第一传导层761、第一隔绝层77、第二传导层762、第一阻障层75以及打线层71，每一层的厚度在边界区A或B小于在中央区C。电极结构8的形状近似于梯形，或者较佳的是一非对称的梯型具有两相对、不同斜率的斜边。
第三实施例
图4是显示根据第三实施例的一电极结构9的第一电极结构61、第二电极62及第三电极63的详细结构。图4的电极结构9与图2的电极结构7的差异在于电极结构7的传导层76分成三部分，第一传导层761、第二传导层762以及一第三传导层763，第二传导层762以及第三传导层763之间以一第二隔绝层78区隔开。第一传导层761、第二传导层762以及第三传导层763的厚度大约相同或者位于相同的数量级。第二隔绝层78包含与第一隔绝层77相同的材料。
对于反射层72、第二阻障层74、第一传导层761、第一隔绝层77、第二传导层762、第二隔绝层78、第三传导层763、第一阻障层75以及打线层71，每一层的厚度在边界区A或B小于在中央区C。电极结构9的形状近似于梯形，或者较佳的是一非对称的梯型具有两相对、不同斜率的斜边。
可理解的是，对于熟悉此项技术者，不同修饰或变更皆可应用于本发明中且不脱离本发明的精神与范围。前述的描述，目的在于涵盖本发明的修饰或变更的公开皆落于本发明的专利范围内且与其均等。

Claims (10)

1.一种发光元件，包含：
基板；
半导体叠层，包含第一半导体层在该基板上，主动层在该第一半导体层上，以及第二半导体层在该主动层上；以及
电极结构，在该第二半导体层上，其中该电极结构包含打线层，传导层以及第一阻障层位于该打线层及该传导层之间，
其中，该传导层的标准氧化电位高于该打线层的标准氧化电位，
其中，该第一阻障层包含第一金属层以及第二金属层。
2.一种发光元件，包含：
基板；
半导体叠层，包含第一半导体层在该基板上，主动层在该第一半导体层上，以及第二半导体层在该主动层上；以及
电极结构，在该第二半导体层上，其中该电极结构包含打线层，传导层以及第一阻障层位于该打线层及该传导层之间，
其中，该电极结构的形状为梯形，该电极结构包含边界区及中央区，该第一阻障层在该边界区的厚度小于在该中央区的厚度。
3.如权利要求2所述的发光元件，其中该电极结构包含两相对、不同斜率的斜边。
4.如权利要求2所述的发光元件，其中该第一阻障层包含第一金属层以及第二金属层。
5.如权利要求1或权利要求4所述的发光元件，其中该第一金属层包含的材料与该第二金属层相异，或其中该第一金属层与该第二金属层各包含一材料选自铬(Cr)、铂(Pt)、钛(Ti)、钛钨(TiW)、钨(W)及锌(Zn)的群组。
6.如权利要求1或权利要求4所述的发光元件，其中该电极结构还包含粘着层，该粘着层为该电极结构中最接近该半导体叠层，其中该粘着层包含铬(Cr)或铑(Rh)，该传导层包含银(Ag)、铝(Al)或铜(Cu)。
7.如权利要求1或权利要求2所述的发光元件，其中该传导层包含第一传导层、第二传导层以及第一隔绝层位于该第一传导层及该第二传导层之间，该第一传导层以及该第二传导层包含相同的材料或相同的厚度，该第一隔绝层包含一材料相异于该第一传导层以及该第二传导层的材料。
8.如权利要求1或权利要求2所述的发光元件，其中该电极结构还包含反射层，该反射层位于该传导层之下，该反射层包含铝(Al)或银(Ag)。
9.如权利要求1或权利要求4所述的发光元件，其中该第一金属层比该第二金属层厚1倍到3倍。
10.如权利要求1或权利要求2所述的发光元件，其中该打线层的厚度介于之间，其中该传导层的厚度与该打线层的厚度的比值介于0.1～10之间。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109728147A (zh) * 2018-12-28 2019-05-07 映瑞光电科技(上海)有限公司 Led芯片结构及其形成方法和led芯片

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8716723B2 (en) * 2008-08-18 2014-05-06 Tsmc Solid State Lighting Ltd. Reflective layer between light-emitting diodes
US9293656B2 (en) * 2012-11-02 2016-03-22 Epistar Corporation Light emitting device
US9691944B2 (en) * 2012-12-04 2017-06-27 Semicon Light Co., Ltd. Semiconductor light-emitting device and method for manufacturing the same
TWI556480B (zh) * 2014-12-19 2016-11-01 High thermal conductivity light emitting diodes
CN105742449B (zh) * 2016-04-01 2018-02-16 清华大学 发光二极管的电极制备方法
CN109698262A (zh) * 2017-10-24 2019-04-30 山东浪潮华光光电子股份有限公司 一种led芯片的电极制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1330416A (zh) * 2000-06-30 2002-01-09 株式会社东芝 半导体发光元件及其制造方法以及半导体发光装置
CN1993837A (zh) * 2004-07-29 2007-07-04 昭和电工株式会社 用于半导体发光器件的正电极
US20070170596A1 (en) * 2006-01-26 2007-07-26 Way-Jze Wen Flip-chip light emitting diode with high light-emitting efficiency
CN101123291A (zh) * 2006-08-11 2008-02-13 夏普株式会社 氮化物半导体发光装置及其制造方法
CN101971368A (zh) * 2008-03-13 2011-02-09 昭和电工株式会社 半导体发光元件及其制造方法
CN102484185A (zh) * 2009-09-07 2012-05-30 首尔Opto仪器股份有限公司 半导体发光二极管及其制造方法

Family Cites Families (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4317086A (en) * 1979-09-13 1982-02-23 Xerox Corporation Passivation and reflector structure for electroluminescent devices
US4527179A (en) * 1981-02-09 1985-07-02 Semiconductor Energy Laboratory Co., Ltd. Non-single-crystal light emitting semiconductor device
US5383214A (en) * 1992-07-16 1995-01-17 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and a method for producing the same
US5661074A (en) * 1995-02-03 1997-08-26 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
US5874747A (en) * 1996-02-05 1999-02-23 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
TW364275B (en) * 1996-03-12 1999-07-11 Idemitsu Kosan Co Organic electroluminescent element and organic electroluminescent display device
RU2130221C1 (ru) * 1996-04-23 1999-05-10 Акционерное общество закрытого типа "Энергомаштехника" Матрица лазерных диодов
US5803579A (en) * 1996-06-13 1998-09-08 Gentex Corporation Illuminator assembly incorporating light emitting diodes
JPH1012915A (ja) * 1996-06-26 1998-01-16 Oki Electric Ind Co Ltd 光学式パターン読取りセンサ
EP0926744B8 (en) * 1997-12-15 2008-05-21 Philips Lumileds Lighting Company, LLC. Light emitting device
US6635901B2 (en) * 2000-12-15 2003-10-21 Nobuhiko Sawaki Semiconductor device including an InGaAIN layer
JP2002344011A (ja) * 2001-05-15 2002-11-29 Sony Corp 表示素子及びこれを用いた表示装置
JP3659201B2 (ja) * 2001-07-11 2005-06-15 ソニー株式会社 半導体発光素子、画像表示装置、照明装置及び半導体発光素子の製造方法
JP2005503043A (ja) * 2001-08-30 2005-01-27 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング エレクトロルミネセンス体
JPWO2003058726A1 (ja) * 2001-12-28 2005-05-19 サンケン電気株式会社 半導体発光素子、発光表示体、半導体発光素子の製造方法及び発光表示体の製造方法
JP3896027B2 (ja) * 2002-04-17 2007-03-22 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
US7511311B2 (en) * 2002-08-01 2009-03-31 Nichia Corporation Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
US6958498B2 (en) * 2002-09-27 2005-10-25 Emcore Corporation Optimized contact design for flip-chip LED
US7213942B2 (en) * 2002-10-24 2007-05-08 Ac Led Lighting, L.L.C. Light emitting diodes for high AC voltage operation and general lighting
WO2004047189A1 (en) * 2002-11-16 2004-06-03 Lg Innotek Co.,Ltd Light emitting device and fabrication method thereof
TW588197B (en) * 2003-04-22 2004-05-21 Au Optronics Corp Light source of backlight
US7053416B2 (en) * 2003-05-30 2006-05-30 Nichia Corporation LED display apparatus
US7456035B2 (en) * 2003-07-29 2008-11-25 Lumination Llc Flip chip light emitting diode devices having thinned or removed substrates
EP1649514B1 (en) * 2003-07-30 2014-01-01 Panasonic Corporation Semiconductor light emitting device, light emitting module, and lighting apparatus
US6958494B2 (en) * 2003-08-14 2005-10-25 Dicon Fiberoptics, Inc. Light emitting diodes with current spreading layer
US7675075B2 (en) * 2003-08-28 2010-03-09 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
KR100624416B1 (ko) * 2003-12-23 2006-09-18 삼성전자주식회사 플립칩형 질화물계 발광소자 및 그 제조방법
KR100586948B1 (ko) * 2004-01-19 2006-06-07 삼성전기주식회사 질화물 반도체 발광소자 및 그 제조방법
JP2005277374A (ja) * 2004-02-26 2005-10-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
JP4632697B2 (ja) * 2004-06-18 2011-02-16 スタンレー電気株式会社 半導体発光素子及びその製造方法
WO2006006822A1 (en) * 2004-07-12 2006-01-19 Gwangju Institute Of Science And Technology Flip-chip light emitting diodes and method of manufacturing thereof
KR100638862B1 (ko) * 2004-07-12 2006-10-25 광주과학기술원 플립칩형 질화물계 발광소자 및 그 제조방법
WO2006011672A1 (en) * 2004-07-29 2006-02-02 Showa Denko K.K. Positive electrode for semiconductor light-emitting device
JP3802911B2 (ja) * 2004-09-13 2006-08-02 ローム株式会社 半導体発光装置
EP1804301B1 (en) * 2004-10-19 2017-01-11 Nichia Corporation Semiconductor element
JP4579654B2 (ja) * 2004-11-11 2010-11-10 パナソニック株式会社 半導体発光装置及びその製造方法、並びに半導体発光装置を備えた照明モジュール及び照明装置
JP4693593B2 (ja) * 2004-11-16 2011-06-01 京セラ株式会社 発光装置
JP4176703B2 (ja) * 2004-11-25 2008-11-05 松下電器産業株式会社 半導体発光装置、照明装置、携帯通信機器、カメラ、及び製造方法
KR100624448B1 (ko) * 2004-12-02 2006-09-18 삼성전기주식회사 반도체 발광소자 및 그 제조방법
US7524686B2 (en) * 2005-01-11 2009-04-28 Semileds Corporation Method of making light emitting diodes (LEDs) with improved light extraction by roughening
US7897420B2 (en) * 2005-01-11 2011-03-01 SemiLEDs Optoelectronics Co., Ltd. Light emitting diodes (LEDs) with improved light extraction by roughening
WO2006095949A1 (en) * 2005-03-11 2006-09-14 Seoul Semiconductor Co., Ltd. Led package having an array of light emitting cells coupled in series
US20060214173A1 (en) * 2005-03-28 2006-09-28 Goldeneye, Inc. Light emitting diodes and methods of fabrication
KR100638813B1 (ko) * 2005-04-15 2006-10-27 삼성전기주식회사 플립칩형 질화물 반도체 발광소자
US8272757B1 (en) * 2005-06-03 2012-09-25 Ac Led Lighting, L.L.C. Light emitting diode lamp capable of high AC/DC voltage operation
JP2008544540A (ja) * 2005-06-22 2008-12-04 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
JP4777757B2 (ja) * 2005-12-01 2011-09-21 スタンレー電気株式会社 半導体発光素子及びその製造方法
EP1966833A1 (en) * 2005-12-19 2008-09-10 Showa Denko K.K. Flip-chip type semiconductor light-emitting device, method for manufacturing flip-chip type semiconductor light-emitting device, printed circuit board for flip-chip type semiconductor light-emitting device, mounting structure for flip-chip type semiconductor light-emitting device-and light-emitting diode lamp
JP2007184411A (ja) * 2006-01-06 2007-07-19 Sony Corp 発光ダイオードおよびその製造方法ならびに集積型発光ダイオードおよびその製造方法ならびに発光ダイオードバックライトならびに発光ダイオード照明装置ならびに発光ダイオードディスプレイならびに電子機器ならびに電子装置およびその製造方法
WO2007091704A1 (en) * 2006-02-08 2007-08-16 Showa Denko K.K. Light-emitting diode and fabrication method thereof
US20070215878A1 (en) * 2006-03-17 2007-09-20 Dong-Sing Wuu Light emitting device
JP5162909B2 (ja) * 2006-04-03 2013-03-13 豊田合成株式会社 半導体発光素子
JP5056082B2 (ja) * 2006-04-17 2012-10-24 日亜化学工業株式会社 半導体発光素子
JP4656525B2 (ja) * 2006-04-24 2011-03-23 株式会社沖データ 半導体装置、ｌｅｄヘッド及び画像形成装置
JP2007305708A (ja) * 2006-05-10 2007-11-22 Rohm Co Ltd 半導体発光素子アレイおよびこれを用いた照明用器具
JP5564162B2 (ja) * 2006-09-29 2014-07-30 フューチャー ライト リミテッド ライアビリティ カンパニー 発光ダイオード装置
JP2008108439A (ja) * 2006-10-23 2008-05-08 Nec Lighting Ltd 電界発光素子および電界発光パネル
US20080149946A1 (en) * 2006-12-22 2008-06-26 Philips Lumileds Lighting Company, Llc Semiconductor Light Emitting Device Configured To Emit Multiple Wavelengths Of Light
KR100836494B1 (ko) * 2006-12-26 2008-06-09 엘지이노텍 주식회사 반도체 발광소자
TWI331411B (en) * 2006-12-29 2010-10-01 Epistar Corp High efficiency light-emitting diode and method for manufacturing the same
KR100849826B1 (ko) * 2007-03-29 2008-07-31 삼성전기주식회사 발광소자 및 이를 포함하는 패키지
US7964888B2 (en) * 2007-04-18 2011-06-21 Cree, Inc. Semiconductor light emitting device packages and methods
CN100541843C (zh) * 2007-09-12 2009-09-16 普光科技（广州）有限公司 一种氮化镓基发光二极管p型层透明导电膜及其制作方法
US8058663B2 (en) * 2007-09-26 2011-11-15 Iii-N Technology, Inc. Micro-emitter array based full-color micro-display
KR100889956B1 (ko) * 2007-09-27 2009-03-20 서울옵토디바이스주식회사 교류용 발광다이오드
US9634191B2 (en) * 2007-11-14 2017-04-25 Cree, Inc. Wire bond free wafer level LED
JP5229034B2 (ja) * 2008-03-28 2013-07-03 サンケン電気株式会社 発光装置
JP2009283551A (ja) * 2008-05-20 2009-12-03 Showa Denko Kk 半導体発光素子及びその製造方法、ランプ
US20110127567A1 (en) * 2008-06-02 2011-06-02 Korea University Industrial & Academic Collaboration Foundation Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates
CN102124574B (zh) * 2008-06-16 2013-07-17 丰田合成株式会社 半导体发光元件、其电极及制造方法以及灯
KR20100008123A (ko) * 2008-07-15 2010-01-25 고려대학교 산학협력단 이중 히트 씽크층으로 구성된 지지대를 갖춘 고성능수직구조의 반도체 발광소자
US8058082B2 (en) * 2008-08-11 2011-11-15 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitting diode with textured substrate
US8633501B2 (en) * 2008-08-12 2014-01-21 Epistar Corporation Light-emitting device having a patterned surface
US9293656B2 (en) * 2012-11-02 2016-03-22 Epistar Corporation Light emitting device
US8716723B2 (en) * 2008-08-18 2014-05-06 Tsmc Solid State Lighting Ltd. Reflective layer between light-emitting diodes
JP5376866B2 (ja) * 2008-08-22 2013-12-25 スタンレー電気株式会社 半導体発光装置の製造方法及び半導体発光装置
JP2010067890A (ja) * 2008-09-12 2010-03-25 Hitachi Cable Ltd 発光素子
JP5232972B2 (ja) * 2008-10-20 2013-07-10 豊田合成株式会社 半導体発光素子及び半導体発光素子の製造方法
KR20100055750A (ko) * 2008-11-18 2010-05-27 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
EP2390932B1 (en) * 2009-01-23 2015-09-09 Nichia Corporation Method for manufacturing a semiconductor device
JP2010258296A (ja) * 2009-04-27 2010-11-11 Renesas Electronics Corp 窒化物系半導体光素子およびその製造方法
WO2011001567A1 (ja) * 2009-07-01 2011-01-06 シャープ株式会社 有機ｅｌ発光体、有機ｅｌ照明装置、及び有機ｅｌ発光体の製造方法
WO2011004890A1 (ja) * 2009-07-10 2011-01-13 昭和電工株式会社 半導体発光素子の製造方法およびランプ、電子機器、及び機械装置
US8629473B2 (en) * 2009-08-13 2014-01-14 Toyoda Gosei Co., Ltd. Semiconductor light-emitting element, semiconductor light-emitting device, method for producing semiconductor light-emitting element, method for producing semiconductor light-emitting device, illumination device using semiconductor light-emitting device, and electronic apparatus
DE112010003700T5 (de) * 2009-09-18 2013-02-28 Soraa, Inc. Power-leuchtdiode und verfahren mit stromdichtebetrieb
JP5497417B2 (ja) * 2009-12-10 2014-05-21 富士フイルム株式会社 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置
JPWO2011071100A1 (ja) * 2009-12-11 2013-04-22 豊田合成株式会社 半導体発光素子、半導体発光素子を用いた発光装置および電子機器
US8154042B2 (en) * 2010-04-29 2012-04-10 Koninklijke Philips Electronics N V Light emitting device with trenches and a top contact
TWI466325B (zh) * 2010-06-25 2014-12-21 Toyoda Gosei Kk Semiconductor light emitting element
CN102130260B (zh) * 2010-09-30 2013-09-18 映瑞光电科技(上海)有限公司 发光装置及其制造方法
CN102479894A (zh) * 2010-11-25 2012-05-30 同方光电科技有限公司 一种GaN基材料的发光二极管及其制备方法
JP5582054B2 (ja) * 2011-02-09 2014-09-03 豊田合成株式会社 半導体発光素子
KR20120134456A (ko) * 2011-06-02 2012-12-12 엘지이노텍 주식회사 발광소자
US8860059B2 (en) * 2011-06-20 2014-10-14 Xiamen Sanan Optoelectronics Technology Co., Ltd. Light emitting devices, systems, and methods of manufacturing
JP6077201B2 (ja) * 2011-08-11 2017-02-08 昭和電工株式会社 発光ダイオードおよびその製造方法
US9070613B2 (en) * 2011-09-07 2015-06-30 Lg Innotek Co., Ltd. Light emitting device
KR101872735B1 (ko) * 2011-11-15 2018-08-02 엘지이노텍 주식회사 발광소자 패키지
KR101969334B1 (ko) * 2011-11-16 2019-04-17 엘지이노텍 주식회사 발광 소자 및 이를 구비한 발광 장치
TWI458122B (zh) * 2011-11-23 2014-10-21 Toshiba Kk 半導體發光元件
CN102637681B (zh) * 2012-04-28 2014-07-30 厦门市三安光电科技有限公司 垂直式发光器件及其制作方法
US9437783B2 (en) * 2012-05-08 2016-09-06 Cree, Inc. Light emitting diode (LED) contact structures and process for fabricating the same
JP2014007252A (ja) * 2012-06-22 2014-01-16 Stanley Electric Co Ltd 半導体発光素子、および、半導体発光素子の製造方法
US9252297B2 (en) * 2012-12-04 2016-02-02 Epistar Corporation Optoelectronic device and the manufacturing method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1330416A (zh) * 2000-06-30 2002-01-09 株式会社东芝 半导体发光元件及其制造方法以及半导体发光装置
CN1993837A (zh) * 2004-07-29 2007-07-04 昭和电工株式会社 用于半导体发光器件的正电极
US20070170596A1 (en) * 2006-01-26 2007-07-26 Way-Jze Wen Flip-chip light emitting diode with high light-emitting efficiency
CN101123291A (zh) * 2006-08-11 2008-02-13 夏普株式会社 氮化物半导体发光装置及其制造方法
CN101971368A (zh) * 2008-03-13 2011-02-09 昭和电工株式会社 半导体发光元件及其制造方法
CN102484185A (zh) * 2009-09-07 2012-05-30 首尔Opto仪器股份有限公司 半导体发光二极管及其制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109728147A (zh) * 2018-12-28 2019-05-07 映瑞光电科技(上海)有限公司 Led芯片结构及其形成方法和led芯片

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