TWI702736B - 發光元件 - Google Patents

發光元件 Download PDF

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TWI702736B
TWI702736B TW107129438A TW107129438A TWI702736B TW I702736 B TWI702736 B TW I702736B TW 107129438 A TW107129438 A TW 107129438A TW 107129438 A TW107129438 A TW 107129438A TW I702736 B TWI702736 B TW I702736B
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metal
conductive
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郭得山
柯竣騰
塗均祥
邱柏順
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晶元光電股份有限公司
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Abstract

一發光元件，包含：一基板；一半導體疊層包含一第一半導體層在基板上，一主動層在第一半導體層上，以及一第二半導體層在主動層上；以及一電極結構在第二半導體層上，其中電極結構包含一打線層，一傳導層以及一第一阻障層位於打線層及傳導層之間，其中，傳導層的標準氧化電位高於打線層的標準氧化電位。

Description

發光元件
本發明係關於具有較佳之電極結構的發光元件用以提升發光元件的可靠度。
當發光效率提升且製造成本降低後，以固態照明取代傳統照明的夢想預期不久即將實現。現階段發光二極體的內部發光效率約為50%到80%之間，但是部分的光發出後被電極及發光層吸收，導致總體出光效率降低。因此，衍生出在電極下設置反射層來解決這個問題。當從發光層發出的光線行經的路徑被電極擋住的時候，反射層可反射而非吸收光線。另外，電極具有一打線墊用以後續的封裝打線用，打線墊通常由金所製成。由於金的價格很高，導致電極的成本增加。
一發光元件，包含：一基板；一半導體疊層包含一第一半導體層在基板上，一主動層在第一半導體層上，以及一第二半導體層在主動層上；以及一電極結構在第二半導體層上，其中電極結構包含一打線層，一傳導層以及一第一阻障層位於打線層及傳導層之間，其中，傳導層的標準氧化電位高於打線層的標準氧化電位。
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。在圖式或說明中，相似或相同之部份係使用相同之標號，並且在圖式中，元件之形狀或厚度可擴大或縮小。需特別注意的是，圖中未繪示或描述之元件，可以是熟習此技藝之人士所知之形式。
第1A圖係顯示一水平式發光元件1包含一基板10；一第一半導體層11具有一第一極性，例如n型氮化鎵(GaN)層，在基板10上；一主動層12具有一結構，例如以氮化銦鎵(InGaN)為基礎的多重量子井(MQW)結構，在第一半導體層11上；一第二半導體層13具有一第二極性，例如p型半導體層，在主動層12上；一透明導電氧化層14包含一第一金屬材料，例如氧化銦錫(ITO)，位於第二半導體層13上；第一半導體層11露出表面S2未被主動層12及第二半導體層13覆蓋；一第一電極61位於表面S2上；一第二電極62位於透明導電氧化層14的表面S1上。基板10可為一絕緣基板，例如藍寶石基板。
圖1B係本發明另一實施例之一垂直式發光元件2。發光元件2包含一導電基板21，設置一第三電極63及第二電極62在導電基板21的相對兩側。導電基板21包含一導電材料，例如銅(Cu)、鋁(Al)、銦(In)、錫(Sn)、鋅(Zn)、鎢(W)或其組合，或半導體材料，例如矽(Si)、碳化矽(SiC)、氮化鎵(GaN)、砷化鎵(GaAs)等。
第一半導體層11、主動層12以及第二半導體層13的材料包含Ⅲ-Ⅴ族化合物半導體，例如磷化鎵(GaP)、砷化鎵(GaAs)或者氮化鎵(GaN)。第一半導體層11、主動層12以及第二半導體層13可使用習知的磊晶方法製造，例如有機金屬化學氣相沉積法(MOCVD)、分子束沉積法(MBE)或者氫化物氣相沉積法(HVPE)。
透明導電氧化層14 的材料包含透明導電氧化材料，例如氧化銦錫(ITO)、鎘錫氧化物（CTO）、銻氧化錫、氧化銦鋅、氧化鋅鋁、氧化鋅或鋅錫氧化物。透明導電氧化層14以一預定之厚度形成，例如小於3000埃(Å)，可藉由蒸鍍沉積之方法，於接近室溫，氮氣環境及壓力在1×10-4托(Torr)及1×10-2托(Torr)之間，較佳為接近5×10-3托(Torr)之腔體環境下。
第一實施例
第2圖係顯示一電極結構7，電極結構7係為根據第一實施例之第一電極61、第二電極62及第三電極63的詳細結構。電極結構7包含一打線層71用以接合打線，一傳導層76位於打線層71之下，一反射層72位於傳導層76之下用以反射從主動層12所發出的光線，一黏著層73用以增加反射層72與透明導電氧化層14或者第一半導體層11之間的黏著力，一第二阻障層74位於傳導層76與反射層72之間，用以將傳導層76與反射層72區隔開避免相互接觸，以及一第一阻障層75位於打線層71及傳導層76之間，用以將傳導層76及打線層71區隔開避免相互接觸。
打線層71包含一第一金屬，例如金(Au)。打線層71的厚度介於1000Å~42000Å之間，較佳的是介於5000Å~10000Å之間。傳導層76包含一第二金屬不同於第一金屬，第二金屬可為鋁(Al)、銀(Ag)或銅(Cu)。第二金屬的導電率與第一金屬的導電率的比值為介於0.1~10之間。第一金屬的化學性質比第二金屬的化學性質穩定，或者是說第二金屬的標準氧化電位比第一金屬的標準氧化電位高。傳導層76的厚度與打線層71的厚度的比值介於0.1~10之間。傳導層76的厚度是依流經電極結構7的驅動電流值來決定。當打線層71的導電率小於傳導層76的導電率時，以低至中驅動電流注入電極結構7，例如120mA~300mA的驅動電流，傳導層76的厚度與電極結構7的總厚度具有一第一比值介於0.3~0.5之間。傳導層76與打線層71的加總厚度為電極結構7的總厚度之0.4~0.7倍。當打線層71的導電率小於傳導層76的導電率時，以高驅動電流注入電極結構7，例如350mA~1000mA的驅動電流，傳導層76的厚度與電極結構7的總厚度具有一第二比值介於0.5~0.8之間，且第二比值大於第一比值。傳導層76與打線層71的總厚度約為電極結構7的總厚度之0.6~0.9倍。當打線層71的導電率大於傳導層76的導電率時，以低至中驅動電流注入電極結構7，例如120mA~300mA的驅動電流，傳導層76的厚度與電極結構7的總厚度具有一第三比值介於0.4~0.7之間，或者傳導層76與打線層71的總厚度約為電極結構7的總厚度之0.5~0.8倍。當打線層71的導電率大於傳導層76的導電率的時候，以高驅動電流注入電極結構7，例如350mA~1000mA的驅動電流，傳導層76的厚度與電極結構7的總厚度具有一第四比值大於第三比值，介於0.55~0.85之間。傳導層76與打線層71的總厚度約為電極結構7的總厚度之0.75~0.95倍。反射層72包含對於主動層12發出的光反射率大於80%的金屬，例如鋁(Al)或銀(Ag)。反射層72的厚度較佳的是介於500Å ~5000Å之間。
第二阻障層74用來將反射層72及傳導層76區隔開，以避免傳導層76及反射層72的材料在兩者之間交互擴散，同時第二阻障層74在傳導層76及反射層72之間可形成低接觸電阻並增加黏著力。第二阻障層74包含一第三金屬層及一第四金屬層位於第三金屬層上，其中第四金屬層包含的材料與第三金屬層相異。在另一實施例中，第二阻障層74包含複數個第三金屬層以及複數個第四金屬層互相交疊，例如鈦(Ti)/鉑(Pt)/鈦(Ti)/鉑(Pt)或者鈦(Ti)/鉑(Pt)/鈦(Ti)/鉑(Pt)/鈦(Ti)/鉑(Pt)。第三金屬層較佳的是比第四金屬層厚1倍到3倍。第三金屬層的厚度介於500Å~1500Å之間，第四金屬層的厚度介於250Å~750Å之間。第三金屬層與第四金屬層各包含一材料選自鉻(Cr)、鉑(Pt)、鈦(Ti)、鈦鎢(TiW)、鎢(W)及鋅(Zn)的群組。因此，第二阻障層74包含至少兩種材料選自鉻(Cr)/鉑(Pt)、鉻(Cr)/鈦(Ti)、鉻(Cr)/鈦鎢(TiW)、鉻(Cr)/鎢(W)、鉻(Cr)/鋅(Zn)、鈦(Ti)/鉑(Pt)、鈦(Ti)/鎢(W)、鈦(Ti)/鈦鎢(TiW)、鈦(Ti)/鎢(W)、鈦(Ti)/鋅(Zn)、鉑(Pt)/鈦鎢(TiW)、鉑(Pt)/鎢(W)、鉑(Pt)/鋅(Zn)、鈦鎢(TiW)/鎢(W)、鈦鎢(TiW)/鋅(Zn)及鎢(W)/鋅(Zn)的群組。第一阻障層75用來將打線層71及傳導層76區隔開，以避免傳導層76及打線層71的材料在兩者之間交互擴散，同時第一阻障層75在傳導層76及打線層71之間可形成低接觸電阻並增加黏著力。第一阻障層75包含一第一金屬層及一第二金屬層位於第一金屬層上，其中第一金屬層包含的材料與第二金屬層相異。在另一實施例中，第一阻障層75包含複數個第一金屬層以及複數個第二金屬層互相交疊，例如鈦(Ti)/鉑(Pt)/鈦(Ti)/鉑(Pt)或者鈦(Ti)/鉑(Pt)/鈦(Ti)/鉑(Pt)/鈦(Ti)/鉑(Pt)。第一金屬層較佳的是比第二金屬層厚1倍到3倍。第一金屬層的厚度介於500Å~1500Å之間，第二金屬層的厚度介於250Å~750Å之間。第一金屬層與第二金屬層各包含一材料選自鉻(Cr)、鉑(Pt)、鈦(Ti)、鈦鎢(TiW)、鎢(W)及鋅(Zn)的群組。因此，第一阻障層75包含至少兩種材料選自鉻(Cr)/鉑(Pt)、鉻(Cr)/鈦(Ti)、鉻(Cr)/鈦鎢(TiW)、鉻(Cr)/鎢(W)、鉻(Cr)/鋅(Zn)、鈦(Ti)/鉑(Pt)、鈦(Ti)/鎢(W)、鈦(Ti)/鈦鎢(TiW)、鈦(Ti)/鎢(W)、鈦(Ti)/鋅(Zn)、鉑(Pt)/鈦鎢(TiW)、鉑(Pt)/鎢(W)、鉑(Pt)/鋅(Zn)、鈦鎢(TiW)/鎢(W)、鈦鎢(TiW)/鋅(Zn)及鎢(W)/鋅(Zn)的群組。黏著層73用以提升反射層72與透明導電氧化層14或第一半導體層11之間的黏著力。黏著層73較佳的包含鉻(Cr)或銠(Rh)。黏著層73的厚度較佳的是介於5Å~50Å之間，使得黏著層73薄得足以讓主動層12發出的光線穿透。
對於反射層72、第二阻障層74、傳導層76、第一阻障層75以及打線層71，每一層的厚度在邊界區A或B小於在中央區C。電極結構7的形狀近似於梯形，或者較佳的是一非對稱的梯型具有兩相對、不同斜率的斜邊。
第二實施例
第3A圖係顯示根據第二實施例之一電極結構8的第一電極61、第二電極62及第三電極63的詳細結構。第3B圖係顯示電極結構8之詳細結構的掃描電子顯微鏡(SEM)圖。第3A圖的電極結構8與第2圖的電極結構7的差異在於電極結構7的傳導層76分成第一傳導層761及第二傳導層762兩部份，一第一隔絕層77位於第一傳導層761及第二傳導層762之間，當高驅動電流注入電極結構8的時候，以降低電子遷移效應造成第一傳導層761及第二傳導層762向外擴散至打線層71或者反射層72的情形。第一傳導層761以及第二傳導層762實質上包含相同的材料，第一傳導層761的厚度與第二傳導層762的厚度相同或為相同的數量級。第一隔絕層77包含一材料相異於第一傳導層761以及第二傳導層762的材料。第一隔絕層77包含單一金屬層選自一群組包括鉻(Cr)、鉑(Pt)、鈦(Ti)、鈦鎢(TiW)、鎢(W)以及鋅(Zn)。
對於反射層72、第二阻障層74、第一傳導層761、第一隔絕層77、第二傳導層762、第一阻障層75以及打線層71，每一層的厚度在邊界區A或B小於在中央區C。電極結構8的形狀近似於梯形，或者較佳的是一非對稱的梯型具有兩相對、不同斜率的斜邊。
第三實施例
第4圖係顯示根據第三實施例之一電極結構9的第一電極結構61、第二電極62及第三電極63的詳細結構。第4圖的電極結構9與第2圖的電極結構7的差異在於電極結構7的傳導層76分成三部份，第一傳導層761、第二傳導層762以及一第三傳導層763，第二傳導層762以及第三傳導層763之間以一第二隔絕層78區隔開。第一傳導層761、第二傳導層762以及第三傳導層763的厚度大約相同或者位於相同的數量級。第二隔絕層78包含與第一隔絕層77相同的材料。
對於反射層72、第二阻障層74、第一傳導層761、第一隔絕層77、第二傳導層762、第二隔絕層78、第三傳導層763、第一阻障層75以及打線層71，每一層的厚度在邊界區A或B小於在中央區C。電極結構9的形狀近似於梯形，或者較佳的是一非對稱的梯型具有兩相對、不同斜率的斜邊。
可理解的是，對於熟習此項技藝者，不同修飾或變更皆可應用於本發明中且不脫離本發明之精神與範圍。前述之描述，目的在於涵蓋本發明之修飾或變更的揭露皆落於本發明之專利範圍內且與其均等。
1‧‧‧水平式發光元件72‧‧‧反射層10‧‧‧基板73‧‧‧黏著層11‧‧‧第一半導體層74‧‧‧第二阻障層12‧‧‧主動層75‧‧‧第一阻障層13‧‧‧第二半導體層76‧‧‧傳導層14‧‧‧透明導電氧化層761‧‧‧第一傳導層S1‧‧‧表面762‧‧‧第二傳導層S2‧‧‧表面763‧‧‧第三傳導層2‧‧‧垂直式發光元件77‧‧‧第一隔絕層21‧‧‧導電基板78‧‧‧第二隔絕層61‧‧‧第一電極8‧‧‧電極結構62‧‧‧第二電極9‧‧‧電極結構63‧‧‧第三電極A‧‧‧邊界區7‧‧‧電極結構B‧‧‧邊界區71‧‧‧打線層C‧‧‧中央區
第1A圖係顯示一水平式發光元件；
第1B圖係顯示一垂直式發光元件；
第2圖係顯示根據第一實施例之電極結構；
第3A圖係顯示根據第二實施例之電極結構；
第3B圖係顯示電極結構8之詳細結構的掃描電子顯微鏡(SEM)圖；及
第4圖係顯示根據第三實施例之電極結構。
71‧‧‧打線層
72‧‧‧反射層
73‧‧‧黏著層
74‧‧‧第二阻障層
75‧‧‧第一阻障層
76‧‧‧傳導層
A‧‧‧邊界區
B‧‧‧邊界區
C‧‧‧中央區

Claims (10)

  1. 一發光元件，包含：一基板；一半導體疊層，包含一第一半導體層，一主動層在該第一半導體層上，以及一第二半導體層在該主動層上；以及一電極結構在該第二半導體層上，其中該電極結構包含複數個傳導層，一打線層位於該複數個傳導層上，以及一第一阻障層位於該打線層及該複數個傳導層之間，其中該複數個傳導層包含一第一傳導層及一第二傳導層，該第一傳導層所包含之一厚度與該第二傳導層所包含之一厚度為相同的數量級，以及其中該打線層包含一第一金屬，該第一傳導層及該第二傳導層各包含一第二金屬，該第二金屬的標準氧化電位比該第一金屬的標準氧化電位高。
  2. 如申請專利範圍第1項之發光元件，其中該第一阻障層包含一第一金屬層及一第二金屬層，其中該第一金屬層或該第二金屬層包含一材料選自鉻(Cr)、鉑(Pt)、鈦(Ti)、鈦鎢(TiW)、鎢(W)及鋅(Zn)的群組。
  3. 如申請專利範圍第1項之發光元件，其中該打線層包含一厚度介於1000Å~42000Å之間。
  4. 如申請專利範圍第2項之發光元件，其中該第一金屬層比該第二金屬層厚1倍到3倍。
  5. 如申請專利範圍第1項之發光元件，更包含一第一隔絕層位於該第一傳導層及該第二傳導層之間，其中該第一隔絕層包含一金屬選自一群組包括鉻(Cr)、鉑(Pt)、鈦(Ti)、鈦鎢(TiW)、鎢(W)以及鋅(Zn)。
  6. 如申請專利範圍第1項之發光元件，更包含一反射層位於該複數個傳導層及該半導體疊層之間，其中該反射層包含鋁(Al)或銀(Ag)。
  7. 如申請專利範圍第1項之發光元件，其中該傳導層包含銀(Ag)、鋁(Al)或銅(Cu)。
  8. 如申請專利範圍第6項之發光元件，更包含一第二阻障層位於該複數個傳導層及該反射層之間，該第二阻障層包含一第三金屬層及一第四金屬層，其中該第三金屬層或該第四金屬層包含一材料選自鉻(Cr)、鉑(Pt)、鈦(Ti)、鈦鎢(TiW)、鎢(W)及鋅(Zn)的群組。
  9. 如申請專利範圍第1項之發光元件，更包含一黏著層，該黏著層為該電極結構中最接近該半導體疊層之一層，該黏著層包含鉻(Cr)或銠(Rh)。
  10. 如申請專利範圍第9項之發光元件，其中該黏著層包含一厚度介於5Å~50Å之間。
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