TWI594459B - 發光元件及其製造方法 - Google Patents

發光元件及其製造方法 Download PDF

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TWI594459B
TWI594459B TW102138857A TW102138857A TWI594459B TW I594459 B TWI594459 B TW I594459B TW 102138857 A TW102138857 A TW 102138857A TW 102138857 A TW102138857 A TW 102138857A TW I594459 B TWI594459 B TW I594459B
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transparent conductive
light
metal
diffusion region
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柯竣騰
郭得山
塗均祥
邱柏順
鍾健凱
葉慧君
蔡旻諺
柯淙凱
陳俊揚
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晶元光電股份有限公司
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Description

發光元件及其製造方法
本發明係關於一發光元件及其製造方法，尤其是關於一具有一擴散區域及一非擴散區域之一透明導電氧化層之發光元件及其製造方法。
發光二極體(LED)是一種固態半導體元件，發光二極體(LED)之結構包含一p型半導體層、一n型半導體層與一發光層，其中發光層形成於p型半導體層與n型半導體層之間。LED的結構包含由Ⅲ-V族元素組成的化合物半導體，例如磷化鎵(GaP)、砷化鎵(GaAs)、氮化鎵(GaN)，其發光原理是在一外加電場作用下，利用n型半導體層所提供的電子與p型半導體層所提供的電洞在發光層的p-n接面附近複合，將電能轉換成光能。
1、2、400‧‧‧發光元件
10、43‧‧‧基板
20、40‧‧‧半導體疊層
13、33‧‧‧第一半導體層
11‧‧‧第二半導體層
12‧‧‧主動層
14、34、44‧‧‧透明導電氧化層
20‧‧‧半導體疊層
15、25、35、45‧‧‧金屬層
S1、S2、S3‧‧‧上表面
151、152、251、252‧‧‧擴散區域
141、142、241、242‧‧‧非擴散區域
21‧‧‧導電基板
63、402‧‧‧第一電極
62、404‧‧‧第二電極
402a‧‧‧第一電極墊
404a‧‧‧第二電極墊
402b‧‧‧第一延伸電極
404b‧‧‧第二延伸電極
400a‧‧‧第一邊
400b‧‧‧第二邊
401‧‧‧第一區域
403‧‧‧第二區域
153、253‧‧‧餘留金屬層
圖1A-1C係本發明一實施例之一發光元件之製造方法。
圖1D係本發明另一實施例之一發光元件之剖面圖。
圖2係本發明一實施例之一發光元件之製造方法之一步驟。
圖3A-3C係本發明一實施例之一發光元件之製造方法之步驟。
圖4係本發明一實施例之一發光元件之放大剖面圖。
圖5係本發明一實施例之一發光元件。
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。在圖式或說明中，相似或相同之部份係使用相同之標號，並且在圖式中，元件之形狀或厚度可擴大或縮小。需特別注意的是，圖中未繪示或描述之元件，可以是熟習此技藝之人士所知之形式。
圖1A-1C係本發明第一實施例之一發光元件1之製造方法。製造方法包含如下步驟：
第一步驟：提供一基板10，例如藍寶石基板。一半導體疊層20包含一具有一第一極性之第一半導體層13，一具有一第二極性之第二半導體層11，以及一主動層12，形成於基板10上。主動層12具有一結構，例如以銦鎵氮為主的多重量子井(MQW)結構，形成於第一半導體層13以及第二半導體層11之間。
於本實施例之一例中，第一半導體層13可為一n型氮化鎵(GaN)層，第二半導體層11可為一p型氮化鎵(GaN)層。
藉由一磊晶方法，例如有機金屬化學氣相沉積法(MOCVD)，分子束磊晶(MBE)，或是氫化物氣相沉積法(HVPE)，以形成第一半導體層13，第二半導體層11，或主動層12。
第二步驟：
於第二步驟中，一透明導電氧化層14形成於半導體疊層20上。
接下來，於透明導電氧化層14形成於半導體疊層20上之後，一金屬層15形成於透明導電氧化層14的一上表面S1上。
金屬層15包含一第一金屬材料，其包含一元素選自於IIA族及IIIA族所構成之群組。金屬層15可藉由蒸鍍沉積之方法，於接近室溫及壓力在1×10-5托(Torr)及1×10-7托(Torr)之間，較佳為接近2.9×10-6托(Torr)之腔體環境下，以一預定之厚度形成，例如小於500埃(Å)。
透明導電氧化層14，包含一第二金屬材料，其包含一或多種元素選自於過渡金屬，IIIA族及IVA族所構成之群組，例如氧化銦錫(ITO)。透明導電氧化層14可藉由蒸鍍沉積之方法，於接近室溫，氮氣環境及壓力在1×10-4托(Torr)及1×10-2托(Torr)之間，較佳為接近5×10-3托(Torr)之腔體環境下，以一預定之厚度形成，例如小於3000埃(Å)。
金屬層15之第一金屬材料與透明導電氧化層14之第二金屬材料不同。於本實施例之一例中，第一金屬材料包含鋁(Al)、鈮(Nb)、鉭(Ta)、釔(Y)或上述之組合。第二金屬材料包含銦(In)或錫(Sn)。第一金屬材料比第二金屬材料容易與氧反應。
第三步驟：
於溫度介於200℃及700℃之間，較佳介於500℃~600℃之間，實質上無氧之環境，例如氮氣環境下，熱處理透明導電氧化層14及金屬層15，使金屬層15中的第一金屬材料擴散進入到透明導電氧化層14以形成一擴散區域151，如圖1B所示，其中透明導電氧化層14包含具有第一金屬材料之擴散區域151及一實質上不具有第一金屬材料之非擴散區域141，如圖1B所示。具體而言，擴散區域151及非擴散區域141的劃分可以藉由元素分析的方式來定義，舉例來說”實質上不具有第一金屬材料之非擴散區域141”可指於非擴散區域141的第一金屬材料濃度低於歐傑電子能譜儀所能量測到第一金屬元素訊號的極限。第一金屬材料可與透明導電氧化層14中的氧反應形成一金屬氧化物，例如五氧化二鉭(Ta2O5)、氧化鋁(Al2O3)、五氧化二鈮(Nd2O5)、氧化釔(Y2O3)、或上述之組合，其可於透明導電氧化層14、透明導電氧化層14之上表面S1、及/或透明導電氧化層14與第二半導體層11之間的介面被偵測到。因為透明導電氧化層14中的氧被提供給第一金屬材料，因此有較多的金屬離子存在於透明導電氧化層14中，可提升透明導電氧化層14的導電率。
第四步驟：
利用感應耦合電漿蝕刻之方式形成一平台30以露出第二半導體層11的一上表面S2，如圖1C所示。
第五步驟：
一第一電極61形成於第二半導體層11的上表面S2上及一第二電極62形成於透明導電氧化層14的上表面S1上以形成一水平式的發光元件1，如圖1C所示。
基板10可為一絕緣基板，例如藍寶石基板。圖1D係本發明另一實施例之一垂直式發光元件2。發光元件2包含一導電基板21，其包含一導電材料，例如金屬或半導體。垂直式發光元件2之製造方法包含了上述相似之步驟，例如第一步驟到第三步驟，其中基板10被置換成導電基板21。與發光元件1不同之步驟在於導電基板21之相對側形成一第一電極63及一第二電極62。
第一半導體層13，主動層12，以及第二半導體層11之材料包含一元素選自於Ⅲ-V族半導體材料，例如砷(As)、鎵(Ga)、鋁(Al)、銦(In)、磷(P)、或氮(N)。
透明導電氧化層14的材料包含透明導電氧化材料，例如氧化銦錫(ITO)、鎘錫氧化物(CTO)、銻氧化錫、氧化銦鋅、氧化鋅鋁、氧化鋅或鋅錫氧化物。
依據圖1A-1C所述之第一實施例，金屬層15於熱處理前為一厚度小於500埃(Å)之薄層，且為一不連續層，其具有複數個金屬晶粒個別地分佈於透明導電氧化層14上。金屬層15於熱處理後則完全擴散進入透明導電氧化層14以形成擴散區域151。
於圖2所示第一實施例之一變化例中，金屬層15之第一金屬材料係藉由熱處理部份擴散進入到透明導電氧化層14中以形成一擴散區域152，其中透明導電氧化層14包含具有第一金屬材料之擴散區域152及一實質上不具有第一金屬材料之非擴散區域142。一餘留金屬層153具有一縮減之尺寸餘留於透明導電氧化層14的上表面S1上。餘留金屬層153之厚度較佳為小於100埃(Å)，以使來自於主動層12之光線可以穿透。擴散區域152 之厚度較佳大於50埃(Å)。
圖3A-3C係本發明之第二實施例。以一金屬層25對比於第一實施例中的金屬層15，第一實施例與本實施例之間的差異處在於金屬層25為一厚度小於500埃(Å)之連續層，金屬層25於熱處理前實質上完全覆蓋於透明導電氧化層14的上表面S1上。金屬層25之第一金屬材料藉由熱處理完全擴散進入到透明導電氧化層14中以形成一擴散區域251，其中透明導電氧化層14包含具有第一金屬材料之擴散區域251及一實質上不具有第一金屬材料之非擴散區域241，如圖3B所示。具體而言，擴散區域251及非擴散區域241的劃分可以藉由元素分析的方式來定義，舉例來說”實質上不具有第一金屬材料之非擴散區域241”可指於非擴散區域241的第一金屬材料濃度低於歐傑電子能譜儀所能量測到第一金屬元素訊號的極限。於本實施例之另一例中，金屬層25之第一金屬材料係藉由熱處理部份擴散進入到透明導電氧化層14中以形成一擴散區域252，其中透明導電氧化層14包含具有第一金屬材料之擴散區域252及一實質上不具有第一金屬材料之非擴散區域242，如圖3C所示。一餘留金屬層253具有一縮減之尺寸餘留於透明導電氧化層14的上表面S1上。餘留金屬層253之厚度較佳為小於100埃(Å)，以使來自於主動層12之光線可以穿透。擴散區域252之厚度較佳大於50埃(Å)。
圖4係本發明之第三實施例。第三實施例與上述實施例之間的差異處在於第一半導體層33的一上表面S3為一粗糙面，一透明導電氧化層34及一金屬層35於熱處理前係順應地(conformably)形成於第一半導體層33上。
圖5係本發明之第四實施例。透明導電氧化層44係形成於半導體疊層40上方，一基板43係形成於半導體疊層40下方。第四實施例與上述實施例之間的差異處在於金屬層45於熱處理前係以一圖案形成於透明導電氧化層44上，且金屬層45之圖案可被設計成對應於發光元件400之電極佈局，例如形狀或分佈等，但是發光元件400之電極佈局不限於本實施例所舉。金屬層45可包含一第一金屬材料，其包含錫(Sn)、銀(Ag)、鎳(Ni)、其他金屬、或上述組合或其合金。金屬層45之厚度小於50奈米(nm)，於本實施例中，金屬層45之厚度可約為70埃(Å)。於本實施例中，金屬層45可包含格狀或網狀之圖案。金屬層格狀或網狀圖案之線寬小於200奈米(nm)，於本實施例中，線寬大約為100奈米(nm)。發光元件400可包含一第一電極402形成於透明導電氧化層44上以及一第二電極404。第一電極402及第二電極404係分別電連接至如第一實施例及圖1A中所述之一第一半導體層13及一第二半導體層11。第一電極402包含一第一電極墊402a及一第一延伸電極402b，第二電極404包含一第二電極墊404a及一第二延伸電極404b。第一電極墊402a設置於靠近發光元件400之一第一邊400a，第二電極墊404a設置於靠近發光元件400之一第二邊400b。第一延伸電極402b延伸自第一電極墊402a，為一圖案式分佈，於透明導電氧化層44之一水平面上定義出一具有一開口401a之第一區域401以及第一區域401以外之一第二區域403。第二延伸電極404b延伸自第二電極墊404a，且第二電極墊404a係位於第一區域401。金屬層45格狀或網狀圖案之密度於低電流密度之區域較密集，於高電流密度之區域較稀疏。於本實施例中，金屬層45之格狀或網狀圖案密度於第二區域403可以比第一區域401密集。具體而言，對應於第 一區域401之金屬層45的格狀圖案可由複數個區塊451組成，每一區塊451具有1μm x 1μm之尺寸大小，對應於第二區域403之金屬層45的格狀圖案可由複數個區塊452組成，每一區塊452具有0.5μm x 0.5μm之尺寸大小，複數個區塊452於第二區域403之圖案密度比複數個區塊451於第一區域401之圖案密度密集。
於本發明之實施例中，擴散區域之第一金屬材料濃度自透明導電氧化層的上表面往透明導電氧化層內部逐漸遞減，或是擴散區域之第一金屬材料濃度隨著一距離遠離於透明導電氧化層上表面而逐漸遞減。於熱處理透明導電氧化層及金屬層之過程中，金屬層中的第一金屬材料，例如鋁，可能會與存在於透明導電氧化層中的氧反應而形成第一金屬材料之氧化物，例如氧化鋁。熱處理過程中的惰性環境，例如氮氣環境，會鈍化並保護透明導電氧化層14，使其於接續的製程中，例如感應耦合電漿蝕刻，不被損害。為了防止第一半導體層與金屬層之間的交互擴散，因而損害第一半導體層的磊晶品質，金屬層較佳地係形成於透明導電氧化層與第一半導體層相接處的對面，以得到較佳的發光性能，本發明之發光元件可以具有較低的順向電壓，較低的片阻值，及較高的光取出效率。
上述所提及之實施例係使用描述技術內容及發明特徵，而使習知此技藝者可了解本發明之內容並據以實施，其並非用以限制本發明之範圍。亦即，任何人對本發明所作之任何顯而易見之修飾或變更皆不脫離本發明之精神與範圍。例如，電連接方式不限於串聯連接。需了解的是，本發明中上述之實施例在適當的情況下，是可互相組合或替換，而非僅限於所描述之特定實施例。
可理解的是，對於熟習此項技藝者，不同修飾或變更皆可應用於本發明中且不脫離本發明之精神與範圍。前述之描述，目的在於涵蓋本發明之修飾或變更的揭露皆落於本發明之專利範圍內且與其均等。
10‧‧‧基板
20‧‧‧半導體疊層
11‧‧‧第二半導體層
12‧‧‧主動層
13‧‧‧第一半導體層
14‧‧‧透明導電氧化層
141‧‧‧非擴散區域
151‧‧‧擴散區域
S1‧‧‧上表面

Claims (10)

  1. 一發光元件，包含：一第一半導體層；以及一透明導電層，其中該透明導電層內包含一擴散區域以及一非擴散區域，其中該非擴散區域比該擴散區域更靠近該第一半導體層，其中該擴散區域包含一第一金屬材料及一導電氧化材料，該第一金屬材料分佈於該導電氧化材料中，該非擴散區域包含該導電氧化材料，且不包含該第一金屬材料。
  2. 如申請專利範圍第1項所述的發光元件，更包含一第二半導體層，一主動層位於該第一半導體層以及該第二半導體層之間，以及一金屬層位於該透明導電層上。
  3. 如申請專利範圍第2項所述的發光元件，其中該金屬層包含複數個不連續層位於該透明導電層上，該複數個不連續層包含不同的厚度。
  4. 如申請專利範圍第1項所述的發光元件，其中於該擴散區域中的該第一金屬材料之濃度於朝向該第一半導體層之方向上係逐步遞減。
  5. 如申請專利範圍第1項所述的發光元件，其中該第一金屬材料包含一元素選自於IIA族元素及IIIA族元素所構成之群組。
  6. 如申請專利範圍第2項所述的發光元件，其中該金屬層包含複數個不連續層彼此分離以露出該透明導電層。
  7. 如申請專利範圍第1項所述的發光元件，其中該導電氧化材料包含一不同於該第一金屬材料的第二金屬材料。
  8. 如申請專利範圍第2項所述的發光元件，更包含一電極結構具有一佈局或一形狀，且電連接至該第一半導體層及該第二半導體層。
  9. 如申請專利範圍第8項所述的發光元件，其中該金屬層包含一圖案對應於該電極結構之該佈局或該形狀。
  10. 如申請專利範圍第9項所述的發光元件，其中該電極結構於該透明導電氧化層上包含一具有較高電流密度之第一區域及一具有較低電流密度之第二區域，其中該金屬層之該圖案於該第二區域較密集，於該第一區域較稀疏。
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