JP5220984B2 - トップエミット型窒化物系発光素子及びその製造方法 - Google Patents
トップエミット型窒化物系発光素子及びその製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 30
- 150000004767 nitrides Chemical class 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000010410 layer Substances 0.000 claims description 184
- 238000005253 cladding Methods 0.000 claims description 53
- 239000010409 thin film Substances 0.000 claims description 33
- 239000011241 protective layer Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 19
- 239000004020 conductor Substances 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 8
- 229910052749 magnesium Inorganic materials 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052703 rhodium Inorganic materials 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 229910052790 beryllium Inorganic materials 0.000 claims description 5
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 5
- 150000002602 lanthanoids Chemical class 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000006185 dispersion Substances 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 description 22
- 229910002601 GaN Inorganic materials 0.000 description 19
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 19
- 238000002834 transmittance Methods 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 11
- 239000002019 doping agent Substances 0.000 description 9
- 239000011777 magnesium Substances 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000011135 tin Substances 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000395 magnesium oxide Substances 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 239000006104 solid solution Substances 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000003570 air Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- -1 gallium nitride compound Chemical class 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 229910017937 Ag-Ni Inorganic materials 0.000 description 1
- 229910017984 Ag—Ni Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910019080 Mg-H Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- RHKZVMUBMXGOLL-UHFFFAOYSA-N cyclopentolate hydrochloride Chemical compound Cl.C1CCCC1(O)C(C(=O)OCCN(C)C)C1=CC=CC=C1 RHKZVMUBMXGOLL-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000007420 reactivation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Description
120 バッファ層
130 n型グラッド層
140 活性層
150 p型グラッド層
160 マルチ透明オーミックコンタクト層
161 格子セル層
161a セル
163 表面保護層
165 透明伝導性薄膜層
180 p型電極パッド
190 n型電極パッド
Claims (7)
- n型クラッド層とp型クラッド層との間に活性層を有するトップエミット型窒化物系発光素子において、
前記p型クラッド層上に、相異なる物質で複層より形成され、伝導性を有する素材で30μm以下の幅を有するサイズのセルを規則的に相互に離隔されるように格子状に形成された格子セル層と、
前記p型クラッド層の表面を保護することができるように、相異なる素材で多層に形成され、少なくとも前記セル間領域をカバーできるように、前記p型クラッド層上に形成されたNi層及びAg層を含む表面保護層と、
前記表面保護層と前記格子セル層上に透明伝導性素材で形成された透明伝導性薄膜層と、
を備えることを特徴とするトップエミット型窒化物系発光素子。 - 前記透明伝導性薄膜層は、透明伝導性酸化物と透明伝導性窒化物のうち、いずれか一つから形成され、
前記透明伝導性酸化物は、In,Sn,Zn,Ga、Cd,Mg,Be,Ag,Mo,V,Cu,lr,Rh,Ru,W,Co,Ni,Mn,Al,ランタニド系金属のうち、選択された少なくとも一つ以上の成分とOとが結合されて形成されたものを含み、
前記透明伝導性薄膜層は、TiとNとを含有して形成されたものを含むことを特徴とする請求項1に記載のトップエミット型窒化物系発光素子。 - 前記格子セル層は、1nmないし100nmの厚さに形成されたことを特徴とする請求項1に記載のトップエミット型窒化物系発光素子。
- 表面保護層は、20nm以下の厚さに形成されたことを特徴とする請求項1に記載のトップエミット型窒化物系発光素子。
- 前記透明伝導性薄膜層は、10nmないし1,000nmの厚さに形成されたことを特徴とする請求項1に記載のトップエミット型窒化物系発光素子。
- n型クラッド層とp型クラッド層との間に活性層を有するトップエミット型窒化物系発光素子の製造方法において、
(A)基板上にn型クラッド層、活性層及びp型クラッド層が順次に積層された発光構造体の前記p型クラッド層上に、相異なる物質で複層より形成され、伝導性を有する素材で30μm以下の幅を有するサイズのセルを規則的に相互に離隔されるように格子状に配列された格子セル層を形成する段階と、
(B)前記p型クラッド層の表面を保護することができるように、相異なる素材で多層に形成され、少なくとも前記セル間領域をカバーできるように、前記p型クラッド層上にNi層及びAg層を含む表面保護層を形成する段階と、
(C)前記表面保護層と前記格子セル層上に透明伝導性素材で透明伝導性薄膜層を形成する段階と、
を含むことを特徴とするトップエミット型窒化物系発光素子の製造方法。 - 前記(A)段階は、前記伝導性物質を前記p型クラッド層上に形成した後、熱を加えて離散されるように処理する熱分散法またはシャドーマスクを利用して蒸着する方法のうち、いずれか1つの方法により形成することを特徴とする請求項8に記載のトップエミット型窒化物系発光素子の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020040016271A KR100601945B1 (ko) | 2004-03-10 | 2004-03-10 | 탑에미트형 질화물계 발광소자 및 그 제조방법 |
KR2004-016271 | 2004-03-10 |
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JP2005260244A JP2005260244A (ja) | 2005-09-22 |
JP5220984B2 true JP5220984B2 (ja) | 2013-06-26 |
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US (1) | US8395176B2 (ja) |
JP (1) | JP5220984B2 (ja) |
KR (1) | KR100601945B1 (ja) |
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US6326294B1 (en) * | 2000-04-27 | 2001-12-04 | Kwangju Institute Of Science And Technology | Method of fabricating an ohmic metal electrode for use in nitride compound semiconductor devices |
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