CN107346083A - 显示装置 - Google Patents

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CN107346083A
CN107346083A CN201710267224.2A CN201710267224A CN107346083A CN 107346083 A CN107346083 A CN 107346083A CN 201710267224 A CN201710267224 A CN 201710267224A CN 107346083 A CN107346083 A CN 107346083A
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tft
display device
ltps
taos
mos
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CN107346083B (zh
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山口阳平
铃村功
三宅秀和
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Japan Display Central Inc
Japan Display Inc
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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Abstract

本发明涉及显示装置。本发明的技术课题为可以在同一基板内形成LTPS TFT和TAOS TFT。其为包含具有形成有像素的显示区域的基板的显示装置，其特征在于，所述像素包含使用了TAOS的第一TFT，在所述第一TFT的漏极上形成有第一LTPS(112)，在所述第一TFT的源极上形成有第二LTPS(113)，所述第一LTPS(112)经由在覆盖所述第一TFT的绝缘膜(105)中形成的第一通孔(108)而与第一电极(106)连接，所述第二LTPS(113)经由在覆盖所述第二TFT的绝缘膜中形成的第二通孔(108)而与第二电极(107)连接。

Description

显示装置
技术领域
本发明涉及显示装置，涉及使用混合式(hybrid)结构(其利用使用Poly-Si(多晶硅)的TFT和使用氧化物半导体的TFT这两者)的显示装置。
背景技术
对于液晶显示装置而言，其构成为：具有TFT基板、与TFT基板相对地配置的对置基板，并在TFT基板与对置基板之间夹持液晶，所述TFT基板中具有像素电极及薄膜晶体管(TFT)等的像素以矩阵状形成。并且，按每个像素来控制基于液晶分子的光的透过率，从而形成图像。
由于LTPS(Low Temperature Poly-Si：低温多晶硅)迁移率高，因此适合作为驱动电路用TFT。另一方面，氧化物半导体的OFF电阻高，若将其用于TFT，则能够减小OFF电流。
为了将利用LTPS的TFT和利用氧化物半导体的TFT形成于同一基板上，存在各种需要克服的问题。专利文献1中记载了用于将利用LTPS的TFT和使用了氧化物半导体的TFT形成于同一基板上的构成。专利文献1中，记载了将掺杂了的LTPS用作氧化物半导体的栅极的构成。
现有技术文献
专利文献
专利文献1：WO2015/194419
发明内容
发明要解决的问题
关于作为像素的开关而使用的TFT，需要漏电流小。利用透明氧化物半导体的TFT能够减小漏电流。以下，将透明氧化物半导体称为TAOS(Transparent Amorphous OxideSemiconductor，透明无定形氧化物半导体)。TAOS包括IGZO(Indium Gallium Zinc Oxide：氧化铟镓锌)、ITZO(Indium Tin Zinc Oxide：氧化铟锡锌)、ZnON(Zinc Oxide Nitride：氮氧化锌)、IZO(Indium Zinc Oxide：氧化铟锌)、IGO(Indium Gallium Oxide：氧化铟镓)、ZnO(Zinc Oxide：氧化锌)等。但是，TAOS的载流子的迁移率小，因此有时难以用使用了TAOS的TFT来形成内置于显示装置内的驱动电路。以下，TAOS也用于指使用了TAOS的TFT的意思。
另一方面，由LTPS形成的TFT的迁移率大，因此能够通过使用了LTPS的TFT来形成驱动电路。以下，LTPS也用于指使用了LTPS的TFT的意思。但是，在将LTPS用作像素中的开关TFT的情况下，LTPS的漏电流大，因此，通常将2个LTPS串联使用。
因此，若作为显示区域中的像素的开关元件而使用TAOS、而在周边驱动电路的TFT中使用LTPS，则是合理的。但是，对于LTPS和TAOS而言，由于材料的性质不同，因此对于将其形成于同一基板上而言，存在问题。即，在LTPS上形成源电极和漏电极时，为了除去表面氧化物，需要用氢氟酸(HF)清洗LTPS，但由于TAOS因氢氟酸(HF)而溶解，因此不能使用同一工序。
本发明通过解决如上所述的问题，从而能够实现将利用LTPS的TFT与利用TAOS的TFT形成于同一基板上。
用于解决问题的手段
本发明克服上述问题，具体手段如下所述。
(1)一种显示装置，其包含具有形成有像素的显示区域的基板，所述显示装置的特征在于，所述像素包含使用了氧化物半导体的第一TFT，在所述第一TFT的漏极上形成有第一多晶硅，在所述第一TFT的源极上形成有第二多晶硅，所述第一多晶硅经由在覆盖所述第一TFT的绝缘膜中形成的第一通孔而与第一电极连接，所述第二多晶硅经由在覆盖所述第一TFT的绝缘膜中形成的第二通孔而与第二电极连接。
(2)(1)所述的显示装置，其特征在于，所述基板在所述显示区域的外侧包含驱动电路，所述驱动电路包含利用多晶硅的第二TFT。
(3)(1)所述的显示装置，其特征在于，所述第一多晶硅与所述氧化物半导体形成pn结，或所述第二多晶硅与所述氧化物半导体形成pn结。
附图说明
图1：为液晶显示装置的俯视图。
图2：为图1的A-A剖面图。
图3：为示出根据本发明的TFT结构的剖面图。
图4：为示出在基板上形成了基膜和a-Si的状态的剖面图。
图5：为示出利用激光将a-Si转化为Poly-Si后的状态的剖面图。
图6：为示出对Poly-Si层进行构图后的状态的剖面图。
图7：为示出对P(磷)进行离子注入的状态的剖面图。
图8：为示出形成TAOS后的状态的剖面图。
图9：为示出形成栅极绝缘膜、并在其上形成了栅电极的状态的剖面图。
图10：为示出对P(磷)进行离子注入的状态的剖面图。
图11：为示出对B(硼)进行离子注入的状态的剖面图。
图12：为示出形成了层间绝缘膜的状态的剖面图。
图13：为根据本发明的TFT的俯视图。
图14：为根据实施例2的TFT的剖面图。
图15：为示出对B(硼)进行离子注入的状态的剖面图。
图16：为示出形成了层间绝缘膜的状态的剖面图。
图17：为液晶显示装置的剖面图。
图18：为示出将本发明应用于液晶显示装置的其他方案的剖面图。
图19：为有机EL显示装置的俯视图。
图20：为图19的B-B剖面图。
图21：为有机EL显示装置的剖面图。
1…液晶显示装置，2…有机EL显示装置，10…显示区域，20…周边电路区域，50…抗蚀剂，100…TFT基板，101…基膜，102…LTPS半导体层，103…栅极绝缘膜，104…栅电极，105…层间绝缘膜，106…漏电极，107…源电极，108…通孔，109…有机钝化膜，110…TAOS层，111…沟道层，112…LTPS漏极，113…LTPS源极，115…a-Si半导体，120…TFT阵列层，121…公共电极，122…电容绝缘膜，123…像素电极，124…取向膜，130…下偏振片，140…通孔，150…端子部，160…柔性布线基板，200…对置基板，201…彩色滤光片，202…黑矩阵，203…保护膜，210…显示元件层，211…反射电极，212…下部电极，213…有机EL层，214…上部电极，215…保护层，216…粘接材料，220…防反射用偏振片，230…上偏振片，300…液晶层，301…液晶分子，400…背光源，500…液晶显示面板，1021…LTPS沟道层，1022…LD层
具体实施方式
以下，基于实施例详细说明本发明的内容。
实施例1
图1为本发明所应用的液晶显示装置的俯视图。图2为图1的A-A剖面图。图1及图2中，TFT基板100与对置基板200相对地形成，在TFT基板100与对置基板200之间夹持液晶。在TFT基板100之下粘贴下偏振片130，在对置基板200的上侧粘贴有上偏振片230。将TFT基板100、对置基板200、下偏振片130、上偏振片230的组合称为液晶显示面板500。
TFT基板100形成得比对置基板200更大，TFT基板100的成为单片的部分作为端子部150，且连接用于向液晶显示装置供给来自外部的信号、电力的柔性布线基板130。液晶显示面板500由于自身不发光，因此在背面上配置背光源400。
关于液晶显示装置，如图1所示，能够分为显示区域10和周边区域20。显示区域中，大量的像素形成为矩阵状，各像素具有开关TFT。周边区域中，形成有用于驱动扫描线、影像信号线等的驱动电路。
关于像素中使用的TFT，由于需要漏电流小，因此使用TAOS，由于周边驱动电路中使用的TFT需要迁移率大，因此使用LTPS，这样做是合理的。在LTPS工序中，当将LTPS与漏电极或者源电极连接时，需要在覆盖LTPS的绝缘膜中形成通孔，且为了除去通孔中的LTPS的表面氧化物，需要进行氢氟酸(HF)清洗。
但是，若将相同的工艺应用于使用了TAOS的TFT，则TAOS溶解于氢氟酸(HF)，不能形成TFT。因而，为了在同一基板上形成利用LTPS的TFT和利用TAOS的TFT，必须解决上述问题。图3为示出解决上述问题的本发明的构成的图。图4至图12为用于实现图3的构成的工艺。
图3中，在同一基板100上形成利用LTPS的TFT和利用TAOS的TFT。利用LTPS的TFT用于周边驱动电路。利用LTPS的TFT包含p-MOS和n-MOS。另一方面，利用TAOS的TFT用作显示区域的像素的开关。
本发明的特征在于利用TAOS的TFT的结构。即，为了连接像素电极或者影像信号线，需要在TFT之上形成的层间绝缘膜105内形成通孔108。在本发明中，在由TAOS110形成的TFT中，在上述通孔108中连接的材料不是TAOS110、而是LTPS112或者LTPS113。由此，在对通孔进行氢氟酸(HF)清洗时，氢氟酸(HF)也不会与TAOS接触，因此利用TAOS的TFT不会被氢氟酸(HF)破坏。
通过图4至图12说明用于实现图3所示的本发明的构成的工艺。在图4中，在由玻璃形成的TFT基板100之上，由SiNx(SiNx有时为SiN)及SiOx(SiOx有时为SiO2)形成基膜101。基膜101用于防止来自玻璃基板的杂质对构成TFT的半导体层造成污染。SiNx例如为50nm，SiOx例如为300nm。基膜101之上形成无定形(非晶)硅：a-Si115。SiNx、SiOx、a-Si通过CVD而连续形成。a-Si以厚度50nm左右被形成。之后，如图5所示，通过照射准分子激光，从而将a-Si115转化为LTPS102。
之后，如图6所示，通过光刻法形成LTPS的岛。关于TFT，形成利用LTPS的p-MOS TFT(以下，记作p-MOS LTPS)、利用LTPS的n-MOS TFT(以下，记作n-MOS LTPS)，利用TAOS的n-MOS TFT(以下，记作n-MOS TAOS)这3种TFT。本发明由于将LTPS用于TAOS TFT的漏电极及源电极，因此在LTPS的构图中，还同时形成n-MOS TAOS的漏电极、源电极。
之后，在p-MOS LTPS整体和n-MOS TAOS的沟道部中形成抗蚀剂50，通过离子注入而掺杂P(磷)，将由抗蚀剂被覆以外的部分转化为n+。由此，形成n-MOS LTPS及n-MOS TAOS的漏极及源极。
之后，如图8所示，在n-MOS TAOS TFT部分形成TAOS110。TAOS例如在10nm～100nm的范围内形成。作为TAOS的材料，可举出例如IGZO、ITZO、ZnON、IZO、IGO、ZnO等。之后，如图9所示，形成栅极绝缘膜103。栅极绝缘膜103是以TEOS(四乙氧基硅烷)为原料通过CVD而形成的SiOx(SiO2)。在栅极绝缘膜103之上形成栅电极104。
之后，如图10所示，通过以栅电极104为掩模通过离子注入而掺杂P(磷)。由此，以n-形成p-MOS LTPS的漏极及源极。n-MOS LTPS的漏极及源极转化为n+。另外，在n-MOS LTPS中，由抗蚀剂50覆盖、但未被栅电极104覆盖的部分成为n-。该层形成于沟道1021的两侧。上述层被称为LDD1022(Light Doped Drain：漏极轻掺杂)，且缓和沟道与源极或者漏极的电场强度，并防止该部分中的绝缘破坏。在图10的n-MOS TAOS中，未被栅电极104覆盖的部分的TAOS通过P(磷)掺杂而成为n-TAOS，从而被赋予导电性。
之后，如图11所示，用抗蚀剂50覆盖n-MOS LTPS及n-MOS TAOS，以栅电极104为掩模通过离子注入而向p-MOS LTPS掺杂B(硼)。由此，将p-MOS的漏极及源极转化为p+，从而赋予充分的导电性。
之后，将抗蚀剂50剥离，如图12所示，覆盖各TFT从而形成层间绝缘膜105。层间绝缘膜105为通过CVD用SiNx而形成。
回到图3，之后，在层间绝缘膜105中形成通孔108。在该通孔中形成漏电极106和源电极107。漏电极106与例如影像信号线连接，源电极107与例如像素电极连接。漏电极106及源电极107由例如Ti-Al合金-Ti的三层形成。Ti是用于防止由Al合金产生的突丘(hillock)等。有时代替Ti而使用Mo、或者W的合金。
形成通孔108后，在形成漏电极106及源电极107前，为了除去LTPS的表面氧化膜而进行氢氟酸(HF)清洗。这里，由于TAOS溶解于氢氟酸(HF)，因此以往未能并行形成LTPS的TFT和TAOS的TFT。与此相对，本发明中，在TAOS TFT的漏极及源极中分别形成LTPS112及LTPS113，且使通孔与该部分对应，因此漏极及源极不会由于氢氟酸(HF)而溶解。
如上所述，根据本发明，由于能够在同一基板上并行形成利用LTPS的TFT和利用TAOS的TFT，因此能够同时形成适于像素区域的TFT、适于驱动电路的TFT。
图13为与图3对应的各TFT的俯视图。在图13中，自左侧起为p-MOS LTPS、n-MOSLTPS、n-MOS TAOS。在n-MOS TAOS中，由于在通孔的部分中形成有LTPS，因此能够通过与p-MOS LTPS、n-MOS LTPS相同的工艺来形成通孔。
实施例2
图14为示出本发明的实施例2的剖面图。图14与图13不同之处在于，图14的n-MOSTAOS中的漏电极112的部分。构成n-MOS TAOS的漏极的LTPS112为p+，与此相对，TAOS110的部分成为n-。因而，在TAOS与构成漏极的LTPS之间，形成利用pn结的二极管。
通过该二极管，能够防止漏电流。在液晶显示装置的像素区域中，TFT的源极和漏极定期交换。因而，在影像信号为+时与为-时中的任一者中，均能阻止漏电流。也就是说，通过pn结能够使漏电流减半。
另一方面，关于有机EL显示装置，不存在影像信号的极性交换。因而，在图14的n-MOS TAOS的漏极或者源极中的任意一者中均形成pn结，从而能够大幅降低漏电流。
图15及图16为用于实现图14的结构的工艺的例子。在本实施例中，在玻璃基板100之上形成基膜101和a-Si115(图4)，通过激光退火将a-Si转化为Poly-Si，形成TAOS，在栅极绝缘膜103之上形成栅电极104、进行离子注入P(磷)，至此与实施例1中的图4至图10相同。
图15为这样的图，向n-MOS LTPS和n-MOS TAOS覆盖抗蚀剂50，向p-MOS LTPS的漏极和源极离子注入B(硼)。图15与实施例1的图11所不同的方面在于：构成n-MOS TAOS的漏极的LTPS112的部分不用抗蚀剂覆盖，通过离子注入而使LTPS漏极112成为p+。由此，在LTPS漏极112与TAOS110之间形成pn结。
之后，如图16所示，覆盖各TFT而形成层间绝缘膜105。之后，在层间绝缘膜105中形成通孔108，对通孔108进行氢氟酸(HF)清洗，形成漏电极106和源电极107，这与实施例1相同。本实施例中，形成通孔108的部分中，由于在n-MOS TAOS中也成为LTPS，因此在通孔108中，TAOS110不会溶解。
在以上说明中，在n-MOS TAOS中，在LTPS漏极112侧形成了pn结，但相反，也可在LTPS源极113侧形成pn结。如上所述，根据本实施例，能够形成漏电流小、且可靠性高的TAOSTFT。
实施例3
图17为示出将实施例1及2所说明的利用n-MOS TAOS的TFT应用于显示区域的情况下的剖面图。图17中，在TFT基板100之上形成TFT阵列层120。TFT阵列层120具有图3或者图14中示出的TAOS TFT的层结构，在其上形成有有机钝化膜。
图17为IPS方式的液晶显示装置的情况，且TFT阵列层120之上以平面状形成有公共电极121。覆盖公共电极121而形成电容绝缘膜122，在其上形成有像素电极123。像素电极123为梳齿状或者条纹状。覆盖像素电极123而形成有用于将液晶分子301初期取向的取向膜。
若在像素电极123与公共电极121之间施加影像信号，则如箭头所示，产生电力线，使液晶分子301旋转从而控制液晶层300的透过率，从而形成图像。
图17中，夹持液晶层300而配置对置基板200。在对置基板200上形成彩色滤光片201和黑矩阵202。覆盖彩色滤光片201和黑矩阵202而形成保护膜(over coat film)20，在其之上形成用于使液晶分子301初期取向的取向膜124。
图18为图17的TFT阵列层120的其他例子。图18中，作为像素的开关TFT，使用了LTPS TFT与TAOS TFT串联连接而成的TFT。图18中，左侧为LTPS TFT，右侧为TAOS TFT。
图18中，覆盖TFT而形成有机钝化膜109。有机钝化膜109之上以平面状形成公共电极121，覆盖它们而形成有电容绝缘膜122。电容绝缘膜122之上以梳齿状或者条纹状形成有像素电极123。
图18中，像素电极123经由在有机钝化膜109及电容绝缘膜122中形成的通孔140而与从TAOS TFT延伸的源电极107连接。根据本发明，对于LTPS TFT和TAOS TFT而言，能够使用共通的工艺，因此根据目的，如图18所示，能够进行LTPS TFT与TAOS TFT的各种组合。
液晶显示装置中，若向像素电极123写入影像信号的话，则通过像素电极123和公共电极121与电容绝缘膜122而形成的保持电容，而在1帧之间保持电压。此时，若TFT的漏电流大的话，则像素电极123的电压发生变化，发生闪烁等，从而不能形成良好的图像。通过使用本发明的TAOS TFT，能够获得漏电流小、具有良好的图像的液晶显示装置。
实施例4
实施例1及2中说明的LTPS TFT与TAOS TFT的组合也能够应用于有机EL显示装置。图19为有机EL显示装置2的俯视图。图19中，形成有显示区域10和周边电路区域20。显示区域10中形成有有机EL驱动TFT、开关TFT。对于开关TFT而言，优选为漏电流小的TAOS TFT。周边驱动电路通过TFT形成，但主要使用LTPS TFT。
图19中，覆盖显示区域10而粘贴有防反射用偏振片220。有机EL显示装置中由于形成有反射电极，因此为了抑制外部光反射，而使用偏振片220。在显示区域20以外的部分形成端子部150，端子部150连接用于向有机EL显示装置供给电源、信号的柔性布线基板160。
图20为图19的B-B剖面图。图20中，TFT基板100上形成有包含有机EL层的显示元件层210。显示元件层210与图19的显示区域10相对应地形成。有机EL材料由于通过水分而分解，因此为了防止水分从外部侵入，覆盖显示元件层210而通过SiNx等来形成保护层215。在保护层215之上粘贴有偏振片220。另外，在显示元件层215以外的部分上形成端子部150，端子部150连接柔性布线基板160。
图21为有机EL显示装置的显示区域的剖面图。图21中，在TFT基板100之上形成有TFT阵列层120。TFT阵列层120包含图3或者图14中所示的TAOS TFT的层结构，且在其上形成有有机钝化膜109。
图21中，在TFT阵列层120之上通过Al合金等而形成反射电极211，在其上通过ITO等而形成下部电极212。在下部电极212之上，形成有有机EL层213。有机EL层213由例如电子注入层、电子传输层、发光层、空穴传输层，空穴注入层等形成。在有机EL层213之上形成作为阴极的上部电极214。关于上部电极214，除了由作为透明导电膜的IZO(Indium ZincOxide)、ITO(Indium Tin Oxide)等而形成之外，有时也通过银等金属的薄膜而形成。覆盖上部电极213而通过SiNx等形成保护膜215，在保护膜215上通过粘接材料216而粘接用于防止反射的偏振片220。
TFT阵列层上形成有驱动TFT、开关TFT等各种TFT，通过使用本发明，能够通过共通的工艺形成LTPS TFT和TAOS TFT，因此能够使用LTPS TFT与TAOS TFT的各种组合，能够获得图像品质优异、且能够减小功耗的有机EL显示装置。
关于实施例1及2所说明的本发明中的利用LTPS的TFT，以n-MOS TFT与p-MOS TFT的对(pair)的形式进行了说明，但不限定于此，从制品规格的要求、制造工艺的要求等考虑，可以为n-MOS或者p-MOS的中的任一者的TFT。
另外，在以上说明中，以将TAOS TFT用于显示区域、将LTPS TFT用于周边驱动电路的形式进行了说明，但根据制品规格，也可以向周边电路添加TAOS TFT，向显示区域添加LTPS TFT。
另外，关于实施例1及2所说明的、本发明中的利用TAOS的TFT，以n-MOS的形式进行了说明，但不限于此，也能够设为p-MOS的TAOS。任一种情况下，通过在漏极或者源极中使用LTPS，均能够使TAOS的TFT的制造工艺与LTPS TFT的情况下的制造工艺共通。

Claims (16)

1.一种显示装置，其包含具有显示区域的基板，所述显示区域中形成有像素，所述显示装置的特征在于，
所述像素包含使用了氧化物半导体的第一TFT，
在所述第一TFT的漏极上形成有第一多晶硅，
在所述第一TFT的源极上形成有第二多晶硅，
所述第一多晶硅经由在覆盖所述第一TFT的绝缘膜中形成的第一通孔而与第一电极连接，
所述第二多晶硅经由在覆盖所述第一TFT的绝缘膜中形成的第二通孔而与第二电极连接。
2.根据权利要求1所述的显示装置，其特征在于，所述基板在所述显示区域的外侧包含驱动电路，所述驱动电路包含利用多晶硅的第二TFT。
3.根据权利要求1所述的显示装置，其特征在于，所述第一TFT为n-MOS TFT。
4.根据权利要求2所述的显示装置，其特征在于，所述第二TFT包含n-MOS TFT和p-MOSTFT。
5.根据权利要求1所述的显示装置，其特征在于，所述显示区域进一步具有第二TFT。
6.根据权利要求2所述的显示装置，其特征在于，所述驱动电路进一步包含第一TFT。
7.根据权利要求1至6中任一项所述的显示装置，其特征在于，所述显示装置为液晶显示装置。
8.根据权利要求1至6中任一项所述的显示装置，其特征在于，所述显示装置为有机EL显示装置。
9.一种显示装置，其包含具有显示区域的基板，所述显示区域中形成有像素，所述显示装置的特征在于，
所述像素包含使用了氧化物半导体的第一TFT，
在所述第一TFT的漏极上形成有第一多晶硅，
在所述第一TFT的源极上形成有第二多晶硅，
所述第一多晶硅经由在覆盖所述第一TFT的绝缘膜中形成的第一通孔而与第一电极连接，
所述第二多晶硅经由在覆盖所述第一TFT的绝缘膜中形成的第二通孔而与第二电极连接，
所述第一LTPS与所述氧化物半导体形成pn结，或
所述第二LTPS与所述氧化物半导体形成pn结。
10.根据权利要求9所述的显示装置，其特征在于，所述基板在所述显示区域的外侧包含驱动电路，所述驱动电路包含利用多晶硅形成的第二TFT。
11.根据权利要求9所述的显示装置，其特征在于，所述第一TFT为n-MOS TFT。
12.根据权利要求10所述的显示装置，其特征在于，所述第二TFT包含n-MOS TFT和p-MOS TFT。
13.根据权利要求9所述的显示装置，其特征在于，所述显示区域进一步具有第二TFT。
14.根据权利要求10所述的显示装置，其特征在于，所述驱动电路进一步包含第一TFT。
15.根据权利要求9至14中任一项所述的显示装置，其特征在于，所述显示装置为液晶显示装置。
16.根据权利要求9至14中任一项所述的显示装置，其特征在于，所述显示装置为有机EL显示装置。
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