WO2020048115A1 - 阵列基板及液晶显示器 - Google Patents

阵列基板及液晶显示器 Download PDF

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Publication number
WO2020048115A1
WO2020048115A1 PCT/CN2019/078796 CN2019078796W WO2020048115A1 WO 2020048115 A1 WO2020048115 A1 WO 2020048115A1 CN 2019078796 W CN2019078796 W CN 2019078796W WO 2020048115 A1 WO2020048115 A1 WO 2020048115A1
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WIPO (PCT)
Prior art keywords
electrode pattern
array substrate
via hole
electrode layer
electrode
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PCT/CN2019/078796
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English (en)
French (fr)
Inventor
王川
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武汉华星光电技术有限公司
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Priority to US16/626,547 priority Critical patent/US20210286217A1/en
Application filed by 武汉华星光电技术有限公司 filed Critical 武汉华星光电技术有限公司
Publication of WO2020048115A1 publication Critical patent/WO2020048115A1/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G02F1/13685—Top gates

Definitions

  • the present application relates to the field of display technology, and in particular, to an array substrate and a liquid crystal display having the array substrate.
  • TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • the prior art array substrate includes a thin film transistor, and is mainly composed of a backlight, a polarizing plate, an array substrate, a color film substrate, and a liquid crystal.
  • each pixel unit is composed of a glass substrate 101, a shielding layer 102, and a buffer layer 103.
  • Polysilicon 104 is sandwiched between the buffer layer 103 and the gate insulating layer 105, and the interlayer insulating layer 106 is placed on the layer.
  • the source and drain electrodes 109 are embedded in a U-shaped structure between the interlayer insulating layer 107 and the flat layer 108.
  • the first electrode layer 110 and the second electrode layer 111 are overlapped by the dielectric layer 112.
  • the gate 106 is a switching electrode, and the insulating layer 105 is used to separate the gate 106 from the source / drain 109 and the signal line.
  • the scan line is connected to the gate 106 of the thin film transistor and controls the switching of a row of thin film transistor devices.
  • the source-drain 109 of the thin-film transistor is connected to the signal line, and the source-drain 109 is connected to the pixel electrode of the thin-film transistor.
  • the signal on the signal line and the drain electrode 109 are transmitted to the source electrode 109 through the thin film transistor switch, and are added to the liquid crystal molecules of the pixel electrode to control the distortion of the liquid crystal molecules.
  • the lead electrode is connected to an edge of the array substrate and is connected to a module component such as a driving circuit.
  • the thin film transistor substrate is an array substrate, and the capacitor formed by the second electrode layer 110 and the first electrode layer 111 in the pixel unit is charged under the control of a clock signal.
  • the rotation direction of the liquid crystal between the thin film transistor substrate and the color film substrate cannot be controlled by changing the electric field between the second electrode layer 110 and the first electrode layer 111, thereby changing the polarization direction of light and controlling The amount of light transmitted in different pixel grids can achieve different display effects.
  • the prior art thin film transistor liquid crystal display has a problem of short charging time.
  • An embodiment of the present application provides an array substrate. By adding a new layer of transparent electrode beside the top transparent electrode and overlapping it with the bottom transparent electrode through the passivation layer hole, the reduction of the top transparent electrode and the bottom transparent electrode is achieved. Capacitors in order to solve the technical problems of long charging time and low charging efficiency of the thin film transistor in the prior art.
  • An array substrate comprising an array of pixel units distributed in a row, the pixel units including: a first electrode layer provided on a glass substrate; a dielectric layer provided on a surface of the first electrode layer; and A two electrode layer disposed on the surface of the dielectric layer, the second electrode layer including a patterned electrode pattern; wherein the electrode pattern includes a main electrode pattern and an auxiliary electrode on at least one side of the main electrode pattern Pattern, the auxiliary electrode pattern is electrically connected to the first electrode layer through a via, and a parallel electric field is formed between the auxiliary electrode pattern and the main electrode pattern to drive liquid crystal deflection.
  • the main electrode pattern and the first electrode layer form an overlapping region and a non-overlapping region
  • the auxiliary electrode pattern corresponds to a gap between the non-overlapping region and the main electrode pattern.
  • the array substrate further includes thin film transistors distributed in an array, a first via hole is formed on the dielectric layer, and the auxiliary electrode pattern passes through the first via hole and The first electrode layer is connected; the main electrode pattern is connected to a drain of the thin film transistor through the first via hole.
  • the auxiliary electrode patterns are distributed at intervals corresponding to the non-overlapping regions, and one auxiliary electrode pattern corresponds to at least one of the first via holes.
  • a second via hole is formed on the first electrode layer, and a diameter of the second via hole is larger than a diameter of the first via hole, and the second via hole is formed.
  • a hole is nested on the first via hole corresponding to the overlapping area, so that the main electrode pattern corresponding to the first via hole is insulated from the first electrode layer by the dielectric layer.
  • the auxiliary electrode pattern and the main body electrode pattern are arranged at equal intervals.
  • the main electrode pattern and the first electrode layer are respectively connected to metal wires of the thin film transistor to form a voltage difference for driving liquid crystal deflection.
  • At least one first via hole is disposed in the dielectric layer.
  • the auxiliary electrode pattern and the main electrode pattern are formed through a same manufacturing process, and the components are both indium tin oxide.
  • An embodiment of the present application further provides an array substrate, wherein the array substrate includes pixel units distributed in an array, and the pixel units include:
  • a first electrode layer disposed on a glass substrate
  • a dielectric layer disposed on a surface of the first electrode layer
  • a second electrode layer disposed on a surface of the dielectric layer, the second electrode layer including a patterned electrode pattern
  • the electrode pattern includes a main electrode pattern and an auxiliary electrode pattern located on at least one side of the main electrode pattern, the auxiliary electrode pattern and the first electrode layer are electrically connected through a via hole, and the auxiliary electrode pattern Forming a parallel electric field with the body electrode pattern to drive liquid crystal deflection;
  • auxiliary electrode pattern and the main electrode pattern are arranged at equal intervals;
  • the main electrode pattern and the first electrode layer are respectively connected to metal wires of the thin film transistor to form a voltage difference for driving liquid crystal deflection.
  • the main electrode pattern and the first electrode layer form an overlapping region and a non-overlapping region
  • the auxiliary electrode pattern corresponds to the non-overlapping region and the main electrode. Pattern interval setting.
  • the array substrate further includes an array of thin film transistors, a first via is formed on the dielectric layer, and the auxiliary electrode pattern passes through the first via.
  • a hole is connected to the first electrode layer; the body electrode pattern is connected to a drain of the thin film transistor through the first via hole.
  • the auxiliary electrode pattern is distributed at intervals corresponding to the non-overlapping region, and one auxiliary electrode pattern corresponds to at least one of the first via holes.
  • a second via hole is formed on the first electrode layer, and a diameter of the second via hole is larger than a diameter of the first via hole, and the first The two via holes are nested on the first via hole corresponding to the overlapping area, so that the main electrode pattern corresponding to the first via hole is insulated from the first electrode layer through the dielectric layer.
  • At least one first via hole is disposed in the dielectric layer.
  • the auxiliary electrode pattern and the main electrode pattern are formed through a same manufacturing process, and the components are both indium tin oxide.
  • the liquid crystal display includes an array substrate.
  • the array substrate includes pixel units distributed in an array.
  • the pixel units include:
  • a first electrode layer disposed on a glass substrate
  • a dielectric layer disposed on a surface of the first electrode layer
  • a second electrode layer disposed on a surface of the dielectric layer, the second electrode layer including a patterned electrode pattern
  • the electrode pattern includes a main electrode pattern and an auxiliary electrode pattern located on at least one side of the main electrode pattern, the auxiliary electrode pattern and the first electrode layer are electrically connected through a via hole, and the auxiliary electrode pattern A parallel electric field is formed with the body electrode pattern to drive liquid crystal deflection.
  • the electrode pattern includes a main electrode pattern and an auxiliary electrode pattern located on at least one side of the main electrode pattern.
  • the auxiliary electrode pattern and the first electrode layer are electrically connected through a via hole, thereby reducing the auxiliary electrode pattern and the main body.
  • the capacitance between the electrode patterns reduces the charging time of the pixel unit, thereby improving work efficiency.
  • FIG. 1 is a schematic diagram of a substrate structure of an array substrate in the prior art.
  • FIG. 2 is a schematic structural view of a substrate of an array substrate according to a first embodiment of the present application
  • FIG. 3 is a schematic cross-sectional structure diagram of a substrate according to a first embodiment of an array substrate provided by the present application;
  • FIG. 4 is a top plan structural view of a single pixel unit of an embodiment of an array substrate provided by the present application.
  • the "first" or “under” of the second feature may include the first and second features in direct contact, and may also include the first and second features. Not directly, but through another characteristic contact between them.
  • the first feature is “above”, “above”, and “above” the second feature, including that the first feature is directly above and obliquely above the second feature, or merely indicates that the first feature is higher in level than the second feature.
  • the first feature is “below”, “below”, and “below” of the second feature, including the fact that the first feature is directly below and obliquely below the second feature, or merely indicates that the first feature is less horizontal than the second feature.
  • the length of the charging time of each pixel unit of the array substrate is related to the capacitance formed by the second electrode layer and the first electrode layer.
  • Capacitors are found in almost all electronic circuits and can be used as "fast batteries”.
  • the array substrate is an insulated gate field effect transistor, which is equivalent to a transistor circuit.
  • the gate is connected to the gate line, the source is connected to the signal line, and the drain is connected to the pixel electrode.
  • Liquid crystal materials are insulators and usually have low electrical conductivity.
  • the pixel electrode on the array substrate and the common electrode on the color filter substrate form electrodes at both ends of the liquid crystal material. Therefore, the pixel electrode portion of the LCD screen is equivalent to a capacitor.
  • the storage capacitor electrode produced by the pixel electrode and the gate at the same time constitutes a storage capacitor via an insulating film, and is connected in parallel with the liquid crystal capacitor.
  • a unit pixel of an active matrix liquid crystal display is equivalent to a transistor switch, which is an equivalent circuit connecting two parallel liquid crystal capacitors and a storage capacitor.
  • the liquid crystal capacitor includes a second electrode layer, a first electrode layer, and a second electrode layer.
  • the first electrode layer bears 80% -90% of the capacitance of the pixel unit, so increasing the capacitance of the first electrode layer and the second electrode layer can improve the charging time of the pixel unit.
  • the control of the switch is connected to the gate line.
  • a positive high-voltage pulse is applied to the gate, and the array substrate is turned on.
  • the source has a signal input, and the conducting array substrate transmits the image signal to the first electrode layer and the second electrode layer connected to the conducting array substrate through the on-state current, and both are charged at the same time, and the signal voltage is stored in the first An electrode layer and a second electrode layer.
  • the signal voltage of the liquid crystal pixels drives the liquid crystal molecules to rotate to achieve the corresponding display, and the liquid crystal capacitor plays a role in maintaining the image display.
  • each pixel unit is composed of a glass substrate 201, a shielding layer 202, and a buffer layer 203.
  • Polysilicon 204 is sandwiched between the buffer layer 203 and the gate insulating layer 205, and the interlayer insulating layer 206 is placed on Directly above the polysilicon 204, the source and drain electrodes 209 are embedded in a U-shaped structure between the interlayer insulating layer 207 and the flat layer 208.
  • the first electrode layer 210 and the second electrode layer 211 are overlapped by a dielectric layer 212.
  • the dielectric layer 212 includes at least one corresponding first via hole 212 for reducing the first electrode layer 210 and the second electrode layer 211.
  • this capacitor forms an electric field for controlling the deflection of the liquid crystal.
  • the gate 206 is a switching electrode, and the insulating layer 205 is used to separate the gate 206 from the source / drain 209 and the signal line.
  • the scan line is connected to the gate 206 of the thin film transistor and controls the switching of a row of thin film transistor devices.
  • the source-drain 209 of the thin-film transistor is connected to the signal line, and the source-drain 109 is connected to the pixel electrode of the thin-film transistor.
  • the signal on the signal line and the drain 209 are transmitted to the source electrode 209 through the thin film transistor switch, and are added to the liquid crystal molecules of the pixel electrode to control the distortion of the liquid crystal molecules.
  • the lead electrode is connected to an edge of the array substrate and is connected to a module component such as a driving circuit.
  • the thin film transistor substrate is an array substrate, and the capacitor formed by the second electrode layer 210 and the first electrode layer 211 in the pixel unit is charged under the control of a clock signal.
  • FIG. 2 The essential difference between FIG. 2 and the prior art is that the figure is provided with a first via 213 in the dielectric layer 212, which reduces the formation of an electric field for controlling liquid crystal deflection.
  • a cross-sectional shape of the first via hole 213 is set to be a circle or a square to facilitate overlap.
  • the second electrode layer includes a main electrode pattern 310 and an auxiliary electrode pattern 313.
  • the electric field between the main electrode pattern 310 and the second auxiliary electrode pattern 313 is equivalent to a capacitor structure for controlling liquid crystal deflection.
  • Required capacitance the capacitance between the main electrode pattern 310 and the first electrode layer 311 is divided into two parts: the capacitance between the main electrode pattern 310 and the first electrode layer 311 and the edge of the main electrode pattern 310 and the first electrode layer Capacitance between 311.
  • the total capacitance between the body electrode pattern 310 and the first electrode layer 311 is the sum of the above two capacitances.
  • the second auxiliary electrode pattern 313 is electrically connected to the main electrode pattern via holes, thereby reducing the distance between the first electrode layer 311 and the main electrode pattern 310.
  • the distance further reduces the capacitance between the edge of the main electrode pattern 310 and the first electrode layer 311, thereby reducing the charging time of the pixel unit.
  • FIG. 4 is a schematic plan view of the top plan structure of the unit pixel unit of FIG.
  • the main electrode pattern 410 overlaps the main electrode pattern 410 and the first electrode layer 411, and the auxiliary electrode pattern and the main electrode pattern are formed through a same manufacturing process, and the components are both indium tin oxide.
  • the auxiliary electrode pattern 423 is interposed between the first electrode layer 411 and the top transparent 410, so as to reduce the capacitance between the main electrode pattern 410 and the first electrode layer 411 and reduce the charging time of the pixel unit.
  • a flat layer hole 415 may also be provided beside the first electrode layer 411 in this embodiment, so as to facilitate the overlapping of the body electrode pattern 410 and the first electrode layer 411.
  • the main electrode pattern 410 is uniformly distributed at one end of the second electrode layer 410.
  • the pixel sequence may be an OLED (Organic Light-Emitting Diode (organic light emitting diode) array, or QLED (Quantum Dot Light Emitting Diodes) array, or Micro LED (micro diode) array.
  • OLED Organic Light-Emitting Diode
  • QLED Quantantum Dot Light Emitting Diodes
  • Micro LED micro diode
  • the beneficial effect is: by adding a new layer of the main electrode pattern beside the second electrode layer, and overlapping it with the first electrode layer through the auxiliary electrode pattern, thereby reducing the distance between the second electrode layer and the first electrode layer
  • the capacitor can reduce the charging time of the pixel unit, thereby improving the working efficiency.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
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Abstract

一种阵列基板，包括阵列分布的像素单元，像素单元包括：第一电极层（211、311、411），设于玻璃基板上；介电层（212、312、412），设于第一电极层（211、311、411）表面；以及第二电极层（210、310、410），设于介电层（212、312、412）表面，并包括图案化的电极图案；图案化的电极图案包括主体电极图案（310、410）和位于主体电极图案（310、410）至少一侧的辅助电极图案（313、413），辅助电极图案（313、413）与第一电极层（211、311、411）通过过孔（213）电性连接。

Description

阵列基板及液晶显示器 技术领域
本申请涉及显示技术领域，尤其涉及一种阵列基板，及具有该阵列基板的液晶显示器。
 背景技术
目前，液晶显示装置作为电子设备的显示部件已经广泛的应用于各种电子产品中，而薄膜晶体管-液晶显示器（Thin Film Transistor-Liquid Crystal Display，简称TFT—LCD）则是液晶显示装置中的一个重要部件。
如说明书附图图1所述，现有技术的阵列基板，包括薄膜晶体管，主要由背光、偏光板、阵列基板、彩色膜片基板和液晶构成。如图1所示，每一个像素单元都由玻璃基板101，遮挡层102和缓冲层103构成，其中缓冲层103和栅极绝缘层105之间夹着多晶硅104，层间绝缘层106层置于多晶硅104正上方，源漏极109以U型结构镶嵌置与层间绝缘层107和平坦层108之间。第一电极层110和第二电极层111由介电层112进行搭接。所述栅极106是开关电极，绝缘层105用于分隔栅极106与源漏极109和信号线。扫描线与薄膜晶体管的栅极106相连，控制一行薄膜晶体管器件的开关。薄膜晶体管的源漏极109与信号线相连，源漏极109与薄膜晶体管像素电极相连。当薄膜晶体管开关导通时，信号线上的信号与漏极109，经过薄膜晶体管开关传到源极109上，加到像素电极的液晶分子上，控制液晶分子的扭曲。引线电极与阵列基板的边缘，与驱动电路等模块组件相连。
薄膜晶体管基板为阵列基板，在时钟信号的控制下对像素单元中第二电极层110与第一电极层111构成的电容进行充电。
现有技术的充电方式，并没有通过改变第二电极层110与第一电极层111之间的电场可以控制薄膜晶体管基板与彩色膜片基板间液晶的旋转方向，从而改变光的偏振方向，控制不同像素格中光的透出量，进而达到不同的显示效果。
综上所述，现有技术的薄膜晶体管液晶显示器存在充电时间较短的问题。
 技术问题
本申请实施例提供一种阵列基板，通过在顶部透明电极旁边新增加一层透明电极，并将其与底部透明电极通过钝化层孔搭接，从而实现减小顶部透明电极与底部透明电极之间的电容，以解决现有技术的薄膜晶体管充电耗时较长，充电效率低下的技术问题。
 技术解决方案
一种阵列基板，所述阵列基板包括阵列分布的像素单元，所述像素单元包括：第一电极层，设置于玻璃基板上；介电层，设置于所述第一电极层表面；以及，第二电极层，设置于所述介电层表面，所述第二电极层包括图案化的电极图案；其中，所述电极图案包括主体电极图案，和位于所述主体电极图案至少一侧的辅助电极图案，所述辅助电极图案与所述第一电极层通过过孔电性连接，所述辅助电极图案与所述主体电极图案之间形成用以驱动液晶偏转的平行电场。
在本申请实施例所提供的阵列基板中，所述主体电极图案与所述第一电极层形成重叠区域与非重叠区域，所述辅助电极图案对应所述非重叠区域与所述主体电极图案间隔设置。
在本申请实施例所提供的阵列基板中，所述阵列基板还包括阵列分布的薄膜晶体管，所述介电层上形成有第一过孔，所述辅助电极图案通过所述第一过孔与所述第一电极层连接；所述主体电极图案通过所述第一过孔与所述薄膜晶体管的漏极连接。
在本申请实施例所提供的阵列基板中，所述辅助电极图案对应所述非重叠区域呈间隔分布，一所述辅助电极图案至少对应一所述第一过孔。
在本申请实施例所提供的阵列基板中，所述第一电极层上形成有第二过孔，所述第二过孔的孔径大于所述第一过孔的孔径，且所述第二过孔对应所述重叠区域嵌套于所述第一过孔上，使得对应所述第一过孔中的所述主体电极图案通过所述介电层与所述第一电极层绝缘。
在本申请实施例所提供的阵列基板中，所述辅助电极图案与所述主体电极图案等间距设置。
在本申请实施例所提供的阵列基板中，所述主体电极图案和所述第一电极层分别与所述薄膜晶体管的金属导线连接，形成用以驱动液晶偏转的电压差。
在本申请实施例所提供的阵列基板中，所述介电层内设置至少对应一所述第一过孔。
在本申请实施例所提供的阵列基板中，所述辅助电极图案和所述主体电极图案经由同一道制作工艺形成，且成分均为氧化铟锡。
本申请实施例还提供一种阵列基板，其中，所述阵列基板包括阵列分布的像素单元，所述像素单元包括：
第一电极层，设置于玻璃基板上；
介电层，设置于所述第一电极层表面；以及，
第二电极层，设置于所述介电层表面，所述第二电极层包括图案化的电极图案；
其中，所述电极图案包括主体电极图案，和位于所述主体电极图案至少一侧的辅助电极图案，所述辅助电极图案与所述第一电极层通过过孔电性连接，所述辅助电极图案与所述主体电极图案之间形成用以驱动液晶偏转的平行电场；
其中，所述辅助电极图案与所述主体电极图案等间距设置；
其中，所述主体电极图案和所述第一电极层分别与所述薄膜晶体管的金属导线连接，形成用以驱动液晶偏转的电压差。
在本申请实施例所提供的阵列基板中，其中，所述主体电极图案与所述第一电极层形成重叠区域与非重叠区域，所述辅助电极图案对应所述非重叠区域与所述主体电极图案间隔设置。
在本申请实施例所提供的阵列基板中，其中，所述阵列基板还包括阵列分布的薄膜晶体管，所述介电层上形成有第一过孔，所述辅助电极图案通过所述第一过孔与所述第一电极层连接；所述主体电极图案通过所述第一过孔与所述薄膜晶体管的漏极连接。
在本申请实施例所提供的阵列基板中，其中，所述辅助电极图案对应所述非重叠区域呈间隔分布，一所述辅助电极图案至少对应一所述第一过孔。
在本申请实施例所提供的阵列基板中，其中，所述第一电极层上形成有第二过孔，所述第二过孔的孔径大于所述第一过孔的孔径，且所述第二过孔对应所述重叠区域嵌套于所述第一过孔上，使得对应所述第一过孔中的所述主体电极图案通过所述介电层与所述第一电极层绝缘。
在本申请实施例所提供的阵列基板中，其中，所述介电层内设置至少对应一所述第一过孔。
在本申请实施例所提供的阵列基板中，其中，所述辅助电极图案和所述主体电极图案经由同一道制作工艺形成，且成分均为氧化铟锡。
本申请实施例提供一种液晶显示器，所述液晶显示器包括阵列基板，其中，所述阵列基板包括阵列分布的像素单元，所述像素单元包括：
第一电极层，设置于玻璃基板上；
介电层，设置于所述第一电极层表面；以及，
第二电极层，设置于所述介电层表面，所述第二电极层包括图案化的电极图案；
其中，所述电极图案包括主体电极图案，和位于所述主体电极图案至少一侧的辅助电极图案，所述辅助电极图案与所述第一电极层通过过孔电性连接，所述辅助电极图案与所述主体电极图案之间形成用以驱动液晶偏转的平行电场。
 有益效果
电极图案包括主体电极图案，和位于所述主体电极图案至少一侧的辅助电极图案，所述辅助电极图案与所述第一电极层通过过孔电性连接，从而实现减小辅助电极图案与主体电极图案之间的电容，减少像素单元充电时间，从而提高工作效率。
 附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术的阵列基板的基板结构示意图。
图2为本申请提供的阵列基板实施例一的基板结构示意图；
图3为本申请提供的阵列基板实施例一的基板截面结构示意图；
图4为本申请提供的阵列基板实施例一单个像素单元顶部平面结构图。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
阵列基板每个像素单元充电时间的长短与第二电极层与第一电极层所构成的电容有关，电阻R和电容C串联电路中，电容充电时间计算公式:充电时间 T= R*C*ln((E-V)/E)，式中:R为该电路的等效电阻，C为电容值；RC串联电路的外加电压值，T为充电的时间，V--电容上要达到的电压、ln为自然对数。该电容C越大充电时间越长，电容C越小充电时间则越短，且电容值C或电阻值R愈小，时间常数R*C也愈小，电容的充电和放电速度就愈快，反之亦然。电容几乎存在于所有电子电路中，它可以作为“快速电池”使用。
阵列基板是一种绝缘栅场效应管，等效为一个晶体管电路。栅极与栅线相连，源极与信号线相连，漏极与像素电极相连。液晶材料属于绝缘体，通常情况下电导率很低。阵列基板上的像素电极和彩膜基板上的共同电极形成液晶材料两端的电极。因此，液晶屏的像素电极部分等效于一个电容。同时，像素电极与栅极同时制作出来的存储电容电极之间隔着绝缘膜构成了存储电容，与液晶电容并联。因此，有源矩阵液晶显示器的一个单元像素等效为一个晶体管开关，连接两个并联液晶电容与存储电容的等效电路，其中液晶电容包括第二电极层和第一电极层，第二电极层和第一电极层承担着像素单元80%-90%的电容，因此提高第一电极层和第二电极层的电容即可提高像素单元的充电时间。
开关的控制与栅线相连，当阵列基板栅极被扫描选通时，栅极上加一正高压脉冲，阵列基板导通。源极有信号输入，导通的阵列基板通过开态电流，将图像信号传送到导通阵列基板相连的第一电极层和第二电极层上后，两者同时充电，信号电压存储在第一电极层和第二电极层上。液晶像素的信号电压驱动液晶分子旋转，实现相应的显示，液晶电容起到保持图像显示的作用。
实施例一
如图2所示，每一个像素单元都由玻璃基板201，遮挡层202和缓冲层203构成，其中缓冲层203和栅极绝缘层205之间夹着多晶硅204，层间绝缘层206层置于多晶硅204正上方，源漏极209以U型结构镶嵌置与层间绝缘层207和平坦层208之间。第一电极层210和第二电极层211由介电层212进行搭接，介电层212内包括至少一对应第一过孔212，用于减小第一电极层210和第二电极层211之间电容，以及，此电容形成用于控制液晶偏转的电场。所述栅极206是开关电极，绝缘层205用于分隔栅极206与源漏极209和信号线。扫描线与薄膜晶体管的栅极206相连，控制一行薄膜晶体管器件的开关。薄膜晶体管的源漏极209与信号线相连，源漏极109与薄膜晶体管像素电极相连。当薄膜晶体管开关导通时，信号线上的信号与漏极209，经过薄膜晶体管开关传到源极209上，加到像素电极的液晶分子上，控制液晶分子的扭曲。引线电极与阵列基板的边缘，与驱动电路等模块组件相连。
薄膜晶体管基板为阵列基板，在时钟信号的控制下对像素单元中第二电极层210与第一电极层211构成的电容进行充电。
图2和现有技术的的本质区别为：该图在介电层212设置有第一过孔213，减小了形成用于控制液晶偏转的电场。
在本申请实施例所提供的阵列基板中，所述第一过孔213的截面形状设置为圆形或方形以便于搭接。
如图3所示，其第二电极层包括主体电极图案310和辅助电极图案313，其主体电极图案310与第二辅助电极图案313之间的电场与等效为电容结构用于控制液晶偏转所需要的电容，主体电极图案310与第一电极层311之间的电容分为两部分：主体电极图案310正下方与第一电极层311之间的电容和主体电极图案310边缘与第一电极层311之间的电容。主体电极图案310与第一电极层311之间的总电容为以上两部分电容之和。通过在主体电极图案310旁边增设一层第一辅助电极图案314，其中第二辅助电极图案313与主体电极图案进行过孔电连接，从而减小第一电极层311和主体电极图案310之间的距离，进而减小主体电极图案310边缘和第一电极层311之间的电容，进而减小像素单元充电的时间。
如图4为图3的单元像素单元顶部平面结构示意图，本实施例中主体电极图案410旁边新增加一层第一辅助电极图案414并将其与第一电极层411通过第二辅助电极图案413搭接，所述主体电极图案410对主体电极图案410和第一电极层411进行搭接，所述辅助电极图案和所述主体电极图案经由同一道制作工艺形成，且成分均为氧化铟锡。所述辅助电极图案423穿插于第一电极层411和顶部透明410之间，从而实现减小主体电极图案410于第一电极层411之间电容，减少像素单元充电时间的目的。在本申请实施例所提供的阵列基板中，本实施例中还可以在第一电极层411旁边设置平坦层孔415，从而方便将主体电极图案410和第一电极层411进行搭接。
在本申请实施例所提供的阵列基板中，所述主体电极图案410均匀的分布在第二电极层410一端。
在本实施例中，所述像素序列可以为为OLED（Organic Light-Emitting Diode，有机发光二极管）阵列，或QLED（Quantum Dot Light Emitting Diodes，量子点发光二极管）阵列，或Micro LED（微型二极管）阵列。
有益效果为：通过在第二电极层旁边新增加一层主体电极图案，并将其与第一电极层通过辅助电极图案搭接，从而实现减小第二电极层与第一电极层之间的电容，达到减少像素单元充电时间，从而提高工作效率。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (17)

  1. 一种阵列基板，其中，所述阵列基板包括阵列分布的像素单元，所述像素单元包括：
    第一电极层，设置于玻璃基板上；
    介电层，设置于所述第一电极层表面；以及，
    第二电极层，设置于所述介电层表面，所述第二电极层包括图案化的电极图案；
    其中，所述电极图案包括主体电极图案，和位于所述主体电极图案至少一侧的辅助电极图案，所述辅助电极图案与所述第一电极层通过过孔电性连接，所述辅助电极图案与所述主体电极图案之间形成用以驱动液晶偏转的平行电场；
    其中，所述辅助电极图案与所述主体电极图案等间距设置；
    其中，所述主体电极图案和所述第一电极层分别与所述薄膜晶体管的金属导线连接，形成用以驱动液晶偏转的电压差。
  2. 如权利要求1所述的阵列基板，其中，所述主体电极图案与所述第一电极层形成重叠区域与非重叠区域，所述辅助电极图案对应所述非重叠区域与所述主体电极图案间隔设置。
  3. 如权利要求2所述的阵列基板，其中，所述阵列基板还包括阵列分布的薄膜晶体管，所述介电层上形成有第一过孔，所述辅助电极图案通过所述第一过孔与所述第一电极层连接；所述主体电极图案通过所述第一过孔与所述薄膜晶体管的漏极连接。
  4. 如权利要求2所述的阵列基板，其中，所述辅助电极图案对应所述非重叠区域呈间隔分布，一所述辅助电极图案至少对应一所述第一过孔。
  5. 如权利要求2所述的阵列基板，其中，所述第一电极层上形成有第二过孔，所述第二过孔的孔径大于所述第一过孔的孔径，且所述第二过孔对应所述重叠区域嵌套于所述第一过孔上，使得对应所述第一过孔中的所述主体电极图案通过所述介电层与所述第一电极层绝缘。
  6. 如权利要求1所述的阵列基板，其中，所述介电层内设置有至少对应一所述第一过孔。
  7. 如权利要求1所述的阵列基板，其中，所述辅助电极图案和所述主体电极图案经由同一道制作工艺形成，且成分均为氧化铟锡。
  8. 一种阵列基板，其中，所述阵列基板包括阵列分布的像素单元，所述像素单元包括：
    第一电极层，设置于玻璃基板上；
    介电层，设置于所述第一电极层表面；以及，
    第二电极层，设置于所述介电层表面，所述第二电极层包括图案化的电极图案；
    其中，所述电极图案包括主体电极图案，和位于所述主体电极图案至少一侧的辅助电极图案，所述辅助电极图案与所述第一电极层通过过孔电性连接，所述辅助电极图案与所述主体电极图案之间形成用以驱动液晶偏转的平行电场。
  9. 如权利要求8所述的阵列基板，其中，所述主体电极图案与所述第一电极层形成重叠区域与非重叠区域，所述辅助电极图案对应所述非重叠区域与所述主体电极图案间隔设置。
  10. 如权利要求9所述的阵列基板，其中，所述阵列基板还包括阵列分布的薄膜晶体管，所述介电层上形成有第一过孔，所述辅助电极图案通过所述第一过孔与所述第一电极层连接；所述主体电极图案通过所述第一过孔与所述薄膜晶体管的漏极连接。
  11. 如权利要求9所述的阵列基板，其中，所述辅助电极图案对应所述非重叠区域呈间隔分布，一所述辅助电极图案至少对应一所述第一过孔。
  12. 如权利要求9所述的阵列基板，其中，所述第一电极层上形成有第二过孔，所述第二过孔的孔径大于所述第一过孔的孔径，且所述第二过孔对应所述重叠区域嵌套于所述第一过孔上，使得对应所述第一过孔中的所述主体电极图案通过所述介电层与所述第一电极层绝缘。
  13. 如权利要求8所述的阵列基板，其中，所述辅助电极图案与所述主体电极图案等间距设置。
  14. 如权利要求8所述的阵列基板，其中，所述主体电极图案和所述第一电极层分别与所述薄膜晶体管的金属导线连接，形成用以驱动液晶偏转的电压差。
  15. 如权利要求8所述的阵列基板，其中，所述介电层内设置至少对应一所述第一过孔。
  16. 如权利要求8所述的阵列基板，其中，所述辅助电极图案和所述主体电极图案经由同一道制作工艺形成，且成分均为氧化铟锡。
  17. 一种液晶显示器，所述液晶显示器包括阵列基板，其中，所述阵列基板包括阵列分布的像素单元，所述像素单元包括：
    第一电极层，设置于玻璃基板上；
    介电层，设置于所述第一电极层表面；以及，
    第二电极层，设置于所述介电层表面，所述第二电极层包括图案化的电极图案；
    其中，所述电极图案包括主体电极图案，和位于所述主体电极图案至少一侧的辅助电极图案，所述辅助电极图案与所述第一电极层通过过孔电性连接，所述辅助电极图案与所述主体电极图案之间形成用以驱动液晶偏转的平行电场。
PCT/CN2019/078796 2018-09-07 2019-03-20 阵列基板及液晶显示器 WO2020048115A1 (zh)

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