CN107301994A - 瞬态电压抑制器及其制作方法 - Google Patents
瞬态电压抑制器及其制作方法 Download PDFInfo
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- CN107301994A CN107301994A CN201710564642.8A CN201710564642A CN107301994A CN 107301994 A CN107301994 A CN 107301994A CN 201710564642 A CN201710564642 A CN 201710564642A CN 107301994 A CN107301994 A CN 107301994A
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- voltage suppressor
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- transient voltage
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- 230000001052 transient effect Effects 0.000 title claims abstract description 64
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000002955 isolation Methods 0.000 claims abstract description 23
- 238000002347 injection Methods 0.000 claims description 40
- 239000007924 injection Substances 0.000 claims description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 238000001312 dry etching Methods 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 230000002457 bidirectional effect Effects 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 7
- 230000006872 improvement Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0296—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices involving a specific disposition of the protective devices
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710564642.8A CN107301994B (zh) | 2017-07-12 | 2017-07-12 | 瞬态电压抑制器及其制作方法 |
Applications Claiming Priority (1)
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CN201710564642.8A CN107301994B (zh) | 2017-07-12 | 2017-07-12 | 瞬态电压抑制器及其制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN107301994A true CN107301994A (zh) | 2017-10-27 |
CN107301994B CN107301994B (zh) | 2019-05-07 |
Family
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Family Applications (1)
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CN201710564642.8A Active CN107301994B (zh) | 2017-07-12 | 2017-07-12 | 瞬态电压抑制器及其制作方法 |
Country Status (1)
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CN (1) | CN107301994B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108063137A (zh) * | 2017-12-11 | 2018-05-22 | 深圳迈辽技术转移中心有限公司 | 瞬态电压抑制器及其制作方法 |
CN108417534A (zh) * | 2018-03-27 | 2018-08-17 | 于洋 | 一种功率元件的保护器件及其制作方法 |
CN110416090A (zh) * | 2019-08-19 | 2019-11-05 | 中国科学技术大学 | 形成氧化镓器件隔离的方法以及氧化镓隔离器件 |
CN110875303A (zh) * | 2018-08-31 | 2020-03-10 | 无锡华润上华科技有限公司 | 一种瞬态电压抑制器件及其制造方法 |
TWI737915B (zh) * | 2018-06-05 | 2021-09-01 | 源芯半導體股份有限公司 | 暫態電壓抑制元件 |
CN113764404A (zh) * | 2021-09-22 | 2021-12-07 | 成都吉莱芯科技有限公司 | 一种低电容低残压的双向esd保护器件及其制作方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6147853A (en) * | 1997-09-29 | 2000-11-14 | Stmicroelectronics S.A. | Protection circuit that can be associated with a filter |
CN1976028A (zh) * | 2005-11-28 | 2007-06-06 | 株式会社东芝 | Esd保护元件 |
US20120025350A1 (en) * | 2010-08-02 | 2012-02-02 | Amazing Microelectronic Corp. | Vertical transient voltage suppressors |
CN105206680A (zh) * | 2014-06-24 | 2015-12-30 | 比亚迪股份有限公司 | 双向瞬态电压抑制二极管及其制造方法 |
CN106298511A (zh) * | 2015-06-05 | 2017-01-04 | 北大方正集团有限公司 | 瞬态抑制二极管的制造方法和瞬态抑制二极管 |
-
2017
- 2017-07-12 CN CN201710564642.8A patent/CN107301994B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6147853A (en) * | 1997-09-29 | 2000-11-14 | Stmicroelectronics S.A. | Protection circuit that can be associated with a filter |
CN1976028A (zh) * | 2005-11-28 | 2007-06-06 | 株式会社东芝 | Esd保护元件 |
US20120025350A1 (en) * | 2010-08-02 | 2012-02-02 | Amazing Microelectronic Corp. | Vertical transient voltage suppressors |
CN105206680A (zh) * | 2014-06-24 | 2015-12-30 | 比亚迪股份有限公司 | 双向瞬态电压抑制二极管及其制造方法 |
CN106298511A (zh) * | 2015-06-05 | 2017-01-04 | 北大方正集团有限公司 | 瞬态抑制二极管的制造方法和瞬态抑制二极管 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108063137A (zh) * | 2017-12-11 | 2018-05-22 | 深圳迈辽技术转移中心有限公司 | 瞬态电压抑制器及其制作方法 |
CN108063137B (zh) * | 2017-12-11 | 2020-09-01 | 南京溧水高新创业投资管理有限公司 | 瞬态电压抑制器及其制作方法 |
CN108417534A (zh) * | 2018-03-27 | 2018-08-17 | 于洋 | 一种功率元件的保护器件及其制作方法 |
CN108417534B (zh) * | 2018-03-27 | 2020-09-04 | 南京恒众信息科技有限公司 | 一种功率元件的保护器件及其制作方法 |
TWI737915B (zh) * | 2018-06-05 | 2021-09-01 | 源芯半導體股份有限公司 | 暫態電壓抑制元件 |
CN110875303A (zh) * | 2018-08-31 | 2020-03-10 | 无锡华润上华科技有限公司 | 一种瞬态电压抑制器件及其制造方法 |
CN110875303B (zh) * | 2018-08-31 | 2022-05-06 | 无锡华润上华科技有限公司 | 一种瞬态电压抑制器件及其制造方法 |
CN110416090A (zh) * | 2019-08-19 | 2019-11-05 | 中国科学技术大学 | 形成氧化镓器件隔离的方法以及氧化镓隔离器件 |
CN113764404A (zh) * | 2021-09-22 | 2021-12-07 | 成都吉莱芯科技有限公司 | 一种低电容低残压的双向esd保护器件及其制作方法 |
Also Published As
Publication number | Publication date |
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CN107301994B (zh) | 2019-05-07 |
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PB01 | Publication | ||
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Effective date of registration: 20190411 Address after: 312500 Xinchang Provincial Hi-tech Industrial Park, Shaoxing City, Zhejiang Province (Zhongyu Village) Applicant after: XINCHANG GREAT WALL AIR-CONDITIONING PARTS Co.,Ltd. Address before: 157499 Group 12 of the Twelfth Committee of Ning'an Town, Mudanjiang City, Heilongjiang Province Applicant before: Deng Pengfei |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Transient voltage suppressor and its manufacturing method Effective date of registration: 20220125 Granted publication date: 20190507 Pledgee: Agricultural Bank of China Limited by Share Ltd. Xinchang county subbranch Pledgor: XINCHANG GREAT WALL AIR-CONDITIONING PARTS Co.,Ltd. Registration number: Y2022330000174 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230323 Granted publication date: 20190507 Pledgee: Agricultural Bank of China Limited by Share Ltd. Xinchang county subbranch Pledgor: XINCHANG GREAT WALL AIR-CONDITIONING PARTS Co.,Ltd. Registration number: Y2022330000174 |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240201 Address after: Room 201, Unit 1, Building 3, No. 60 Tai'an Road, Donggang District, Rizhao City, Shandong Province, 276800 Patentee after: Zhang Chuanlian Country or region after: China Address before: 312500 Xinchang Provincial Hi-tech Industrial Park, Shaoxing City, Zhejiang Province (Zhongyu Village) Patentee before: XINCHANG GREAT WALL AIR-CONDITIONING PARTS Co.,Ltd. Country or region before: China |