CN106449634A - 瞬态电压抑制器及其制造方法 - Google Patents
瞬态电压抑制器及其制造方法 Download PDFInfo
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- CN106449634A CN106449634A CN201610845693.3A CN201610845693A CN106449634A CN 106449634 A CN106449634 A CN 106449634A CN 201610845693 A CN201610845693 A CN 201610845693A CN 106449634 A CN106449634 A CN 106449634A
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- 230000001052 transient effect Effects 0.000 title claims abstract description 84
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 150
- 238000002955 isolation Methods 0.000 claims abstract description 9
- 238000009792 diffusion process Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 27
- 239000004020 conductor Substances 0.000 claims description 21
- 230000001629 suppression Effects 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 14
- 230000015556 catabolic process Effects 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 3
- 238000003475 lamination Methods 0.000 abstract 2
- 230000005611 electricity Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02697—Forming conducting materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (15)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610845693.3A CN106449634B (zh) | 2016-09-23 | 2016-09-23 | 瞬态电压抑制器及其制造方法 |
US15/711,146 US10978441B2 (en) | 2016-09-23 | 2017-09-21 | Transient voltage suppressor and method for manufacturing the same |
US17/193,164 US11482519B2 (en) | 2016-09-23 | 2021-03-05 | Transient voltage suppressor and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610845693.3A CN106449634B (zh) | 2016-09-23 | 2016-09-23 | 瞬态电压抑制器及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN106449634A true CN106449634A (zh) | 2017-02-22 |
CN106449634B CN106449634B (zh) | 2019-06-14 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610845693.3A Active CN106449634B (zh) | 2016-09-23 | 2016-09-23 | 瞬态电压抑制器及其制造方法 |
Country Status (2)
Country | Link |
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US (2) | US10978441B2 (zh) |
CN (1) | CN106449634B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107293533A (zh) * | 2017-07-21 | 2017-10-24 | 北京燕东微电子有限公司 | 瞬态电压抑制器及其制造方法 |
CN110034108A (zh) * | 2018-09-06 | 2019-07-19 | 晶焱科技股份有限公司 | 瞬态电压抑制器 |
CN111060751A (zh) * | 2019-12-16 | 2020-04-24 | 信利(惠州)智能显示有限公司 | 遮光层介电常数测量方法及介电常数检测面板 |
CN110336262B (zh) * | 2019-07-10 | 2021-11-12 | 上海艾为电子技术股份有限公司 | 一种浪涌保护电路 |
CN116387363A (zh) * | 2023-05-08 | 2023-07-04 | 上海晶岳电子有限公司 | 一种ldmos工艺tvs器件及其制造方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10157904B2 (en) | 2017-03-31 | 2018-12-18 | Alpha And Omega Semiconductor (Cayman) Ltd. | High surge bi-directional transient voltage suppressor |
US10211199B2 (en) | 2017-03-31 | 2019-02-19 | Alpha And Omega Semiconductor (Cayman) Ltd. | High surge transient voltage suppressor |
CN107301996B (zh) * | 2017-07-21 | 2023-11-28 | 北京燕东微电子有限公司 | 瞬态电压抑制器及其制造方法 |
US11362082B2 (en) * | 2018-06-22 | 2022-06-14 | Intel Corporation | Implanted substrate contact for in-process charging control |
CN110875302B (zh) * | 2018-08-31 | 2022-08-12 | 无锡华润上华科技有限公司 | 瞬态电压抑制器件及其制造方法 |
JP6937281B2 (ja) * | 2018-09-14 | 2021-09-22 | 株式会社東芝 | 半導体装置 |
US10825805B2 (en) * | 2018-10-26 | 2020-11-03 | Alpha & Omega Semiconductor (Cayman) Ltd. | Low capacitance transient voltage suppressor including a punch-through silicon controlled rectifier as low-side steering diode |
CN113257917B (zh) * | 2021-03-29 | 2023-04-14 | 重庆中科渝芯电子有限公司 | 一种集成整流器的平面mosfet及其制造方法 |
CN114023824A (zh) * | 2021-09-29 | 2022-02-08 | 上海韦尔半导体股份有限公司 | 一种单向瞬态抑制二极管及其制备工艺 |
CN115295546A (zh) * | 2022-08-22 | 2022-11-04 | 上海晶岳电子有限公司 | 一种tvs器件及制造方法 |
Citations (3)
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US20140001549A1 (en) * | 2012-06-29 | 2014-01-02 | Freescale Semiconductor, Inc. | Semiconductor device and driver circuit with an active device and isolation structure interconnected through a resistor circuit, and method of manufacture thereof |
CN105261616A (zh) * | 2015-09-22 | 2016-01-20 | 矽力杰半导体技术(杭州)有限公司 | 瞬态电压抑制器及其制造方法 |
CN205595332U (zh) * | 2016-05-10 | 2016-09-21 | 北京燕东微电子有限公司 | 单通道瞬态电压抑制器 |
Family Cites Families (8)
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US4736271A (en) * | 1987-06-23 | 1988-04-05 | Signetics Corporation | Protection device utilizing one or more subsurface diodes and associated method of manufacture |
US6127723A (en) * | 1998-01-30 | 2000-10-03 | Sgs-Thomson Microelectronics, S.R.L. | Integrated device in an emitter-switching configuration |
US7700977B2 (en) * | 2007-06-21 | 2010-04-20 | Intersil Americas Inc. | Integrated circuit with a subsurface diode |
US10037986B2 (en) * | 2015-03-19 | 2018-07-31 | Nxp Usa, Inc. | ESD protection structure and method of fabrication thereof |
FR3033937B1 (fr) * | 2015-03-19 | 2018-04-27 | Stmicroelectronics (Rousset) Sas | Diode zener a faible tension de claquage ajustable |
US9929141B2 (en) * | 2016-04-04 | 2018-03-27 | Allegro Microsystems, Llc | Devices with an embedded zener diode |
JP2017216325A (ja) * | 2016-05-31 | 2017-12-07 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN106449633B (zh) | 2016-09-23 | 2019-08-09 | 矽力杰半导体技术(杭州)有限公司 | 瞬态电压抑制器及其制造方法 |
-
2016
- 2016-09-23 CN CN201610845693.3A patent/CN106449634B/zh active Active
-
2017
- 2017-09-21 US US15/711,146 patent/US10978441B2/en active Active
-
2021
- 2021-03-05 US US17/193,164 patent/US11482519B2/en active Active
Patent Citations (3)
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US20140001549A1 (en) * | 2012-06-29 | 2014-01-02 | Freescale Semiconductor, Inc. | Semiconductor device and driver circuit with an active device and isolation structure interconnected through a resistor circuit, and method of manufacture thereof |
CN105261616A (zh) * | 2015-09-22 | 2016-01-20 | 矽力杰半导体技术(杭州)有限公司 | 瞬态电压抑制器及其制造方法 |
CN205595332U (zh) * | 2016-05-10 | 2016-09-21 | 北京燕东微电子有限公司 | 单通道瞬态电压抑制器 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107293533A (zh) * | 2017-07-21 | 2017-10-24 | 北京燕东微电子有限公司 | 瞬态电压抑制器及其制造方法 |
CN107293533B (zh) * | 2017-07-21 | 2023-11-24 | 北京燕东微电子有限公司 | 瞬态电压抑制器及其制造方法 |
CN110034108A (zh) * | 2018-09-06 | 2019-07-19 | 晶焱科技股份有限公司 | 瞬态电压抑制器 |
US10930637B2 (en) | 2018-09-06 | 2021-02-23 | Amazing Microelectronic Corp. | Transient voltage suppressor |
CN110336262B (zh) * | 2019-07-10 | 2021-11-12 | 上海艾为电子技术股份有限公司 | 一种浪涌保护电路 |
CN111060751A (zh) * | 2019-12-16 | 2020-04-24 | 信利(惠州)智能显示有限公司 | 遮光层介电常数测量方法及介电常数检测面板 |
CN116387363A (zh) * | 2023-05-08 | 2023-07-04 | 上海晶岳电子有限公司 | 一种ldmos工艺tvs器件及其制造方法 |
CN116387363B (zh) * | 2023-05-08 | 2024-01-09 | 上海晶岳电子有限公司 | 一种ldmos工艺tvs器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US11482519B2 (en) | 2022-10-25 |
US10978441B2 (en) | 2021-04-13 |
CN106449634B (zh) | 2019-06-14 |
US20180090477A1 (en) | 2018-03-29 |
US20210202469A1 (en) | 2021-07-01 |
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Address after: 310051 No. 6 Lianhui Street, Xixing Street, Binjiang District, Hangzhou City, Zhejiang Province Patentee after: Silergy Semiconductor Technology (Hangzhou ) Co., Ltd. Address before: 310012 East Software Park Science and Technology Building A1501, No. 90 Wensan Road, Hangzhou City, Zhejiang Province Patentee before: Silergy Semiconductor Technology (Hangzhou ) Co., Ltd. |
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Effective date of registration: 20200309 Address after: 210042 302, Xuanwu Road, 7, Xuanwu Road, Xuanwu District, Nanjing, Jiangsu, China, 7 Patentee after: Silergy Semiconductor Technology (Hangzhou) Ltd. Address before: 310051 No. 6 Lianhui Street, Xixing Street, Binjiang District, Hangzhou City, Zhejiang Province Patentee before: Silergy Semiconductor Technology (Hangzhou) Ltd. |
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TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: 210042 302, Xuanwu Road, 7, Xuanwu Road, Xuanwu District, Nanjing, Jiangsu, China, 7 Patentee after: Nanjing Sili Microelectronics Technology Co., Ltd Address before: 210042 302, Xuanwu Road, 7, Xuanwu Road, Xuanwu District, Nanjing, Jiangsu, China, 7 Patentee before: Silergy Semiconductor Technology (Hangzhou) Ltd. |
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CP01 | Change in the name or title of a patent holder |